DE112009000253B8 - Halbleitervorrichtung - Google Patents
Halbleitervorrichtung Download PDFInfo
- Publication number
- DE112009000253B8 DE112009000253B8 DE112009000253.6T DE112009000253T DE112009000253B8 DE 112009000253 B8 DE112009000253 B8 DE 112009000253B8 DE 112009000253 T DE112009000253 T DE 112009000253T DE 112009000253 B8 DE112009000253 B8 DE 112009000253B8
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- semiconductor device
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008018050 | 2008-01-29 | ||
JP2008-018050 | 2008-01-29 | ||
JP2008160800 | 2008-06-19 | ||
JP2008-160800 | 2008-06-19 | ||
PCT/JP2009/051328 WO2009096412A1 (ja) | 2008-01-29 | 2009-01-28 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE112009000253T5 DE112009000253T5 (de) | 2011-02-24 |
DE112009000253B4 DE112009000253B4 (de) | 2020-01-16 |
DE112009000253B8 true DE112009000253B8 (de) | 2020-06-10 |
Family
ID=40912764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112009000253.6T Active DE112009000253B8 (de) | 2008-01-29 | 2009-01-28 | Halbleitervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (3) | US9466711B2 (de) |
JP (3) | JP5340961B2 (de) |
CN (3) | CN102522427B (de) |
DE (1) | DE112009000253B8 (de) |
WO (1) | WO2009096412A1 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102522427B (zh) * | 2008-01-29 | 2014-07-30 | 富士电机株式会社 | 半导体装置 |
US8097918B2 (en) * | 2009-08-14 | 2012-01-17 | Infineon Technologies Ag | Semiconductor arrangement including a load transistor and sense transistor |
JP5634318B2 (ja) * | 2011-04-19 | 2014-12-03 | 三菱電機株式会社 | 半導体装置 |
FR2976721B1 (fr) | 2011-06-17 | 2013-06-21 | St Microelectronics Rousset | Dispositif de detection d'une attaque dans une puce de circuit integre |
FR2976722B1 (fr) * | 2011-06-17 | 2013-11-29 | St Microelectronics Rousset | Dispositif de protection d'une puce de circuit integre contre des attaques |
KR101862345B1 (ko) * | 2012-02-27 | 2018-07-05 | 삼성전자주식회사 | 모오스 전계효과 트랜지스터를 포함하는 반도체 장치 및 그 제조 방법 |
US9076805B2 (en) * | 2012-07-14 | 2015-07-07 | Infineon Technologies Ag | Current sense transistor with embedding of sense transistor cells |
JP5932623B2 (ja) * | 2012-12-05 | 2016-06-08 | 株式会社 日立パワーデバイス | 半導体装置およびそれを用いた電力変換装置 |
WO2014188570A1 (ja) * | 2013-05-23 | 2014-11-27 | トヨタ自動車株式会社 | 半導体装置 |
WO2014203317A1 (ja) * | 2013-06-17 | 2014-12-24 | 株式会社日立製作所 | 半導体装置およびその製造方法、並びに電力変換装置 |
JP6215647B2 (ja) * | 2013-10-22 | 2017-10-18 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
CN105745758B (zh) * | 2013-11-29 | 2019-05-10 | Abb瑞士股份有限公司 | 绝缘栅双极晶体管 |
CN106062964B (zh) * | 2014-04-21 | 2019-07-26 | 三菱电机株式会社 | 功率用半导体装置 |
EP3183753A4 (de) | 2014-08-19 | 2018-01-10 | Vishay-Siliconix | Elektronische schaltung |
DE102014115464B4 (de) * | 2014-10-23 | 2019-10-24 | Infineon Technologies Austria Ag | Leistungs-halbleitervorrichtung mit temperaturschutz |
JP6565192B2 (ja) * | 2015-01-15 | 2019-08-28 | 富士電機株式会社 | 半導体装置 |
US9929260B2 (en) | 2015-05-15 | 2018-03-27 | Fuji Electric Co., Ltd. | IGBT semiconductor device |
US10217738B2 (en) * | 2015-05-15 | 2019-02-26 | Smk Corporation | IGBT semiconductor device |
JP6312933B2 (ja) | 2015-06-09 | 2018-04-18 | 三菱電機株式会社 | 電力用半導体装置 |
US10056370B2 (en) * | 2015-07-16 | 2018-08-21 | Fuji Electric Co., Ltd. | Semiconductor device |
JP6604107B2 (ja) * | 2015-07-16 | 2019-11-13 | 富士電機株式会社 | 半導体装置 |
DE112015006832T5 (de) * | 2015-08-26 | 2018-06-07 | Mitsubishi Electric Corporation | Halbleiteranordnung |
CN108292680B (zh) | 2015-12-03 | 2021-01-22 | 三菱电机株式会社 | 碳化硅半导体装置 |
DE112015007172B4 (de) | 2015-12-07 | 2022-10-27 | Mitsubishi Electric Corporation | Siliciumcarbid-halbleitereinheit |
JP6746978B2 (ja) | 2016-03-15 | 2020-08-26 | 富士電機株式会社 | 半導体装置 |
JP6565814B2 (ja) | 2016-07-21 | 2019-08-28 | 株式会社デンソー | 半導体装置 |
JP6769165B2 (ja) | 2016-08-10 | 2020-10-14 | 富士電機株式会社 | 半導体装置 |
JP6805620B2 (ja) | 2016-08-10 | 2020-12-23 | 富士電機株式会社 | 半導体装置 |
WO2018052098A1 (ja) * | 2016-09-14 | 2018-03-22 | 富士電機株式会社 | 半導体装置およびその製造方法 |
WO2018092787A1 (ja) * | 2016-11-17 | 2018-05-24 | 富士電機株式会社 | 半導体装置 |
JP6693438B2 (ja) * | 2017-02-15 | 2020-05-13 | 株式会社デンソー | 半導体装置 |
DE102017107174B4 (de) * | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
IT201700046614A1 (it) | 2017-04-28 | 2018-10-28 | St Microelectronics Srl | Dispositivo mos di potenza con sensore di corrente integrato e relativo processo di fabbricazione |
CN109524396B (zh) * | 2017-09-20 | 2023-05-12 | 株式会社东芝 | 半导体装置 |
DE102017124871B4 (de) * | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
DE102017124872B4 (de) | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
DE112018006404T5 (de) * | 2017-12-14 | 2020-09-03 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
JP6610696B2 (ja) * | 2018-04-03 | 2019-11-27 | 富士電機株式会社 | トレンチmos型半導体装置 |
KR102216522B1 (ko) * | 2018-06-19 | 2021-02-17 | 누보톤 테크놀로지 재팬 가부시키가이샤 | 반도체 장치 |
JP6954237B2 (ja) | 2018-07-04 | 2021-10-27 | 株式会社デンソー | 半導体装置 |
CN111725306B (zh) * | 2019-03-22 | 2023-04-21 | 安建科技(深圳)有限公司 | 一种沟槽型功率半导体器件及其制造方法 |
DE102019204100A1 (de) * | 2019-03-26 | 2020-10-01 | Robert Bosch Gmbh | Leistungstransistorzelle für Batteriesysteme |
JP7310343B2 (ja) * | 2019-06-14 | 2023-07-19 | 富士電機株式会社 | 半導体装置 |
WO2021010000A1 (ja) * | 2019-07-12 | 2021-01-21 | 富士電機株式会社 | 半導体装置 |
US10937899B1 (en) * | 2020-02-07 | 2021-03-02 | Renesas Electronics Corporation | Semiconductor device |
JP2021141179A (ja) | 2020-03-04 | 2021-09-16 | 富士電機株式会社 | 半導体装置 |
JP2021168323A (ja) * | 2020-04-09 | 2021-10-21 | Koa株式会社 | 電流検出用抵抗器及び電流検出装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5097302A (en) * | 1990-03-20 | 1992-03-17 | Fuji Electric Co., Ltd. | Semiconductor device having current detection capability |
US5453390A (en) * | 1992-03-30 | 1995-09-26 | Nippondenso Co., Ltd. | Method of producing semiconductor device with current detecting function |
US5614749A (en) * | 1995-01-26 | 1997-03-25 | Fuji Electric Co., Ltd. | Silicon carbide trench MOSFET |
US6180966B1 (en) * | 1997-03-25 | 2001-01-30 | Hitachi, Ltd. | Trench gate type semiconductor device with current sensing cell |
JP2002016252A (ja) * | 2000-06-27 | 2002-01-18 | Toshiba Corp | 絶縁ゲート型半導体素子 |
US20050263853A1 (en) * | 2004-05-31 | 2005-12-01 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57109375A (en) * | 1980-12-26 | 1982-07-07 | Fujitsu Ltd | Mis type transistor protection circuit |
JP2715399B2 (ja) | 1990-07-30 | 1998-02-18 | 株式会社デンソー | 電力用半導体装置 |
GB9207849D0 (en) | 1992-04-09 | 1992-05-27 | Philips Electronics Uk Ltd | A semiconductor device |
JP3226075B2 (ja) * | 1994-06-22 | 2001-11-05 | 富士電機株式会社 | たて型mos半導体装置 |
US5559355A (en) | 1994-03-04 | 1996-09-24 | Fuji Electric Co., Ltd. | Vertical MOS semiconductor device |
JP3515298B2 (ja) | 1995-12-07 | 2004-04-05 | 株式会社東芝 | 半導体装置 |
US6002153A (en) | 1995-12-07 | 1999-12-14 | Kabushiki Kaisha Toshiba | MOS type semiconductor device with a current detecting function |
JP3911719B2 (ja) | 1996-04-25 | 2007-05-09 | 富士電機デバイステクノロジー株式会社 | 電流検知部内蔵型絶縁ゲートバイポーラトランジスタ |
JP3400237B2 (ja) | 1996-04-30 | 2003-04-28 | 株式会社東芝 | 半導体装置 |
JP3504085B2 (ja) | 1996-09-30 | 2004-03-08 | 株式会社東芝 | 半導体装置 |
JP3961946B2 (ja) | 1997-03-14 | 2007-08-22 | 株式会社東芝 | 半導体装置 |
JP3545590B2 (ja) | 1997-03-14 | 2004-07-21 | 株式会社東芝 | 半導体装置 |
JP3450650B2 (ja) | 1997-06-24 | 2003-09-29 | 株式会社東芝 | 半導体装置 |
JP4581179B2 (ja) | 2000-04-26 | 2010-11-17 | 富士電機システムズ株式会社 | 絶縁ゲート型半導体装置 |
JP2002176177A (ja) | 2000-12-07 | 2002-06-21 | Denso Corp | 半導体装置及びその製造方法 |
WO2002061845A1 (en) | 2001-02-01 | 2002-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
JP2003031807A (ja) | 2001-07-11 | 2003-01-31 | Nec Kansai Ltd | 半導体装置 |
JP3703435B2 (ja) * | 2002-02-05 | 2005-10-05 | 三菱電機株式会社 | 半導体装置 |
JP3922038B2 (ja) | 2002-02-14 | 2007-05-30 | 株式会社豊田自動織機 | 電流検出機能付mos型電界効果トランジスタ |
JP2004022941A (ja) | 2002-06-19 | 2004-01-22 | Toshiba Corp | 半導体装置 |
JP3997126B2 (ja) | 2002-08-29 | 2007-10-24 | 株式会社ルネサステクノロジ | トレンチゲート型半導体装置 |
JP4892172B2 (ja) | 2003-08-04 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7157785B2 (en) * | 2003-08-29 | 2007-01-02 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices |
EP1671374B1 (de) | 2003-10-08 | 2018-05-09 | Toyota Jidosha Kabushiki Kaisha | Halbleiteranordnung mit isoliertem gate und verfahren zu deren herstellung |
JP4538211B2 (ja) | 2003-10-08 | 2010-09-08 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
JP4725014B2 (ja) * | 2003-12-25 | 2011-07-13 | 株式会社デンソー | 半導体装置およびそれを用いた点火装置 |
JP2006049455A (ja) | 2004-08-03 | 2006-02-16 | Fuji Electric Device Technology Co Ltd | トレンチ型絶縁ゲート半導体装置 |
JP4500639B2 (ja) | 2004-09-24 | 2010-07-14 | トヨタ自動車株式会社 | トレンチゲート型半導体装置およびその製造方法 |
JP2006245477A (ja) | 2005-03-07 | 2006-09-14 | Toshiba Corp | 半導体装置 |
JP2007059636A (ja) * | 2005-08-25 | 2007-03-08 | Renesas Technology Corp | Dmosfetおよびプレーナ型mosfet |
JP4706462B2 (ja) | 2005-12-07 | 2011-06-22 | トヨタ自動車株式会社 | 電流検出機能を有する半導体装置 |
JP5098303B2 (ja) | 2006-03-02 | 2012-12-12 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
JP5044950B2 (ja) | 2006-03-14 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
JP2008235788A (ja) * | 2007-03-23 | 2008-10-02 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP2009176884A (ja) | 2008-01-23 | 2009-08-06 | Sanken Electric Co Ltd | 半導体装置 |
CN102522427B (zh) * | 2008-01-29 | 2014-07-30 | 富士电机株式会社 | 半导体装置 |
JP5481030B2 (ja) * | 2008-01-30 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2009
- 2009-01-28 CN CN201110414104.3A patent/CN102522427B/zh active Active
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5097302A (en) * | 1990-03-20 | 1992-03-17 | Fuji Electric Co., Ltd. | Semiconductor device having current detection capability |
US5453390A (en) * | 1992-03-30 | 1995-09-26 | Nippondenso Co., Ltd. | Method of producing semiconductor device with current detecting function |
US5614749A (en) * | 1995-01-26 | 1997-03-25 | Fuji Electric Co., Ltd. | Silicon carbide trench MOSFET |
US6180966B1 (en) * | 1997-03-25 | 2001-01-30 | Hitachi, Ltd. | Trench gate type semiconductor device with current sensing cell |
JP2002016252A (ja) * | 2000-06-27 | 2002-01-18 | Toshiba Corp | 絶縁ゲート型半導体素子 |
US20050263853A1 (en) * | 2004-05-31 | 2005-12-01 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
Non-Patent Citations (1)
Title |
---|
MATSUSHITA K.; OMURA I.; OGURA T: Blocking voltage design consideration for deep trench MOS gate high power devices.. In: Proceeding of 1995 International Symposium on Power Semiconductor Devices, 1995, 256-260. * |
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DE112009000253B4 (de) | 2020-01-16 |
US9466711B2 (en) | 2016-10-11 |
US10916541B2 (en) | 2021-02-09 |
JP5589042B2 (ja) | 2014-09-10 |
DE112009000253T5 (de) | 2011-02-24 |
US11749675B2 (en) | 2023-09-05 |
CN102522427B (zh) | 2014-07-30 |
CN101933141B (zh) | 2013-02-13 |
JPWO2009096412A1 (ja) | 2011-05-26 |
US20110012195A1 (en) | 2011-01-20 |
CN103022115A (zh) | 2013-04-03 |
US20160372460A1 (en) | 2016-12-22 |
JP5589052B2 (ja) | 2014-09-10 |
US20210134789A1 (en) | 2021-05-06 |
JP2013055361A (ja) | 2013-03-21 |
JP5340961B2 (ja) | 2013-11-13 |
CN103022115B (zh) | 2015-09-02 |
WO2009096412A1 (ja) | 2009-08-06 |
CN102522427A (zh) | 2012-06-27 |
JP2012253391A (ja) | 2012-12-20 |
CN101933141A (zh) | 2010-12-29 |
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