CN1728401B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1728401B
CN1728401B CN200510086030XA CN200510086030A CN1728401B CN 1728401 B CN1728401 B CN 1728401B CN 200510086030X A CN200510086030X A CN 200510086030XA CN 200510086030 A CN200510086030 A CN 200510086030A CN 1728401 B CN1728401 B CN 1728401B
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China
Prior art keywords
gate
field effect
explaining
present
memory
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Expired - Fee Related
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CN200510086030XA
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Chinese (zh)
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CN1728401A (zh
Inventor
久本大
安井感
木村绅一郎
石丸哲也
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
CN200510086030XA 2004-07-29 2005-07-20 半导体器件及其制造方法 Expired - Fee Related CN1728401B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP221764/2004 2004-07-29
JP2004221764A JP2006041354A (ja) 2004-07-29 2004-07-29 半導体装置及びその製造方法

Publications (2)

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CN1728401A CN1728401A (zh) 2006-02-01
CN1728401B true CN1728401B (zh) 2011-05-25

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US (2) US7504689B2 (enExample)
JP (1) JP2006041354A (enExample)
KR (1) KR20060050209A (enExample)
CN (1) CN1728401B (enExample)
TW (1) TWI360865B (enExample)

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JP4659527B2 (ja) * 2005-06-20 2011-03-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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WO2008075656A1 (ja) * 2006-12-19 2008-06-26 Nec Corporation 半導体装置
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JP5404149B2 (ja) * 2009-04-16 2014-01-29 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5554973B2 (ja) * 2009-12-01 2014-07-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP5214700B2 (ja) * 2010-10-18 2013-06-19 ルネサスエレクトロニクス株式会社 半導体装置
US8598646B2 (en) * 2011-01-13 2013-12-03 Spansion Llc Non-volatile FINFET memory array and manufacturing method thereof
JP5951374B2 (ja) * 2012-07-09 2016-07-13 ルネサスエレクトロニクス株式会社 半導体装置
US20140167142A1 (en) 2012-12-14 2014-06-19 Spansion Llc Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory Cells
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JP2014232810A (ja) * 2013-05-29 2014-12-11 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP6274826B2 (ja) 2013-11-14 2018-02-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9368644B2 (en) * 2013-12-20 2016-06-14 Cypress Semiconductor Corporation Gate formation memory by planarization
JP6238235B2 (ja) * 2014-06-13 2017-11-29 ルネサスエレクトロニクス株式会社 半導体装置
JP6375181B2 (ja) * 2014-08-28 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN106158637B (zh) * 2015-03-31 2019-04-26 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
CN106158638B (zh) * 2015-04-01 2019-03-29 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
CN105120143B (zh) * 2015-07-28 2019-03-29 深圳市理邦精密仪器股份有限公司 电子阴道镜消除图像光斑的方法及装置
JP6557095B2 (ja) 2015-08-26 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置
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US20090152619A1 (en) 2009-06-18
TW200625553A (en) 2006-07-16
KR20060050209A (ko) 2006-05-19
CN1728401A (zh) 2006-02-01
US7847343B2 (en) 2010-12-07
US20060022260A1 (en) 2006-02-02
US7504689B2 (en) 2009-03-17
JP2006041354A (ja) 2006-02-09
TWI360865B (en) 2012-03-21

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