TWI360865B - Semiconductor device and manufacturing method of s - Google Patents
Semiconductor device and manufacturing method of s Download PDFInfo
- Publication number
- TWI360865B TWI360865B TW094120881A TW94120881A TWI360865B TW I360865 B TWI360865 B TW I360865B TW 094120881 A TW094120881 A TW 094120881A TW 94120881 A TW94120881 A TW 94120881A TW I360865 B TWI360865 B TW I360865B
- Authority
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- Taiwan
- Prior art keywords
- gate
- electrode
- region
- oxide film
- diffusion layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 230000015654 memory Effects 0.000 claims description 178
- 238000009792 diffusion process Methods 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 68
- 230000005669 field effect Effects 0.000 claims description 43
- 238000002955 isolation Methods 0.000 claims description 25
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 8
- 230000006870 function Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 230000003205 diastolic effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 166
- 230000008569 process Effects 0.000 description 154
- 239000010410 layer Substances 0.000 description 79
- 238000010586 diagram Methods 0.000 description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 125000006850 spacer group Chemical group 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 101001047515 Homo sapiens Lethal(2) giant larvae protein homolog 1 Proteins 0.000 description 4
- 102100022956 Lethal(2) giant larvae protein homolog 1 Human genes 0.000 description 4
- 101100272590 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) BIT2 gene Proteins 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- -1 metal oxide nitride Chemical class 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 101001084254 Homo sapiens Peptidyl-tRNA hydrolase 2, mitochondrial Proteins 0.000 description 3
- 102100030867 Peptidyl-tRNA hydrolase 2, mitochondrial Human genes 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 101100237460 Rattus norvegicus Mgll gene Proteins 0.000 description 1
- 101100401357 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MGL2 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000002599 Smear Layer Diseases 0.000 description 1
- 101100020724 Zea mays MGL3 gene Proteins 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004221764A JP2006041354A (ja) | 2004-07-29 | 2004-07-29 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200625553A TW200625553A (en) | 2006-07-16 |
| TWI360865B true TWI360865B (en) | 2012-03-21 |
Family
ID=35731149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094120881A TWI360865B (en) | 2004-07-29 | 2005-06-22 | Semiconductor device and manufacturing method of s |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7504689B2 (enExample) |
| JP (1) | JP2006041354A (enExample) |
| KR (1) | KR20060050209A (enExample) |
| CN (1) | CN1728401B (enExample) |
| TW (1) | TWI360865B (enExample) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4601316B2 (ja) * | 2004-03-31 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP4659527B2 (ja) * | 2005-06-20 | 2011-03-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5086558B2 (ja) | 2006-04-04 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| KR100762262B1 (ko) * | 2006-10-23 | 2007-10-01 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 형성방법 |
| CN101611489B (zh) * | 2006-12-19 | 2011-03-02 | 日本电气株式会社 | 半导体装置 |
| JP2008263034A (ja) * | 2007-04-11 | 2008-10-30 | Oki Electric Ind Co Ltd | 半導体記憶装置の製造方法 |
| JP2009049097A (ja) * | 2007-08-16 | 2009-03-05 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリセルとその製造方法、及びその半導体不揮発性メモリセルを有する半導体不揮発性メモリとその製造方法 |
| JP2010182751A (ja) | 2009-02-03 | 2010-08-19 | Renesas Electronics Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JP5404149B2 (ja) * | 2009-04-16 | 2014-01-29 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP5554973B2 (ja) * | 2009-12-01 | 2014-07-23 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| JP5214700B2 (ja) * | 2010-10-18 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8598646B2 (en) * | 2011-01-13 | 2013-12-03 | Spansion Llc | Non-volatile FINFET memory array and manufacturing method thereof |
| JP5951374B2 (ja) * | 2012-07-09 | 2016-07-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20140167220A1 (en) | 2012-12-14 | 2014-06-19 | Spansion Llc | Three dimensional capacitor |
| US10014380B2 (en) | 2012-12-14 | 2018-07-03 | Cypress Semiconductor Corporation | Memory first process flow and device |
| US9209197B2 (en) | 2012-12-14 | 2015-12-08 | Cypress Semiconductor Corporation | Memory gate landing pad made from dummy features |
| US20140167141A1 (en) | 2012-12-14 | 2014-06-19 | Spansion Llc | Charge Trapping Split Gate Embedded Flash Memory and Associated Methods |
| US9368606B2 (en) | 2012-12-14 | 2016-06-14 | Cypress Semiconductor Corporation | Memory first process flow and device |
| US8836006B2 (en) | 2012-12-14 | 2014-09-16 | Spansion Llc | Integrated circuits with non-volatile memory and methods for manufacture |
| US8816438B2 (en) | 2012-12-14 | 2014-08-26 | Spansion Llc | Process charging protection for split gate charge trapping flash |
| US9966477B2 (en) | 2012-12-14 | 2018-05-08 | Cypress Semiconductor Corporation | Charge trapping split gate device and method of fabricating same |
| US8822289B2 (en) | 2012-12-14 | 2014-09-02 | Spansion Llc | High voltage gate formation |
| US20140167142A1 (en) | 2012-12-14 | 2014-06-19 | Spansion Llc | Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory Cells |
| US20140210012A1 (en) | 2013-01-31 | 2014-07-31 | Spansion Llc | Manufacturing of FET Devices Having Lightly Doped Drain and Source Regions |
| US9293359B2 (en) * | 2013-03-14 | 2016-03-22 | Silicon Storage Technology, Inc. | Non-volatile memory cells with enhanced channel region effective width, and method of making same |
| JP2014232810A (ja) * | 2013-05-29 | 2014-12-11 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6274826B2 (ja) * | 2013-11-14 | 2018-02-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US9368644B2 (en) * | 2013-12-20 | 2016-06-14 | Cypress Semiconductor Corporation | Gate formation memory by planarization |
| JP6238235B2 (ja) * | 2014-06-13 | 2017-11-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6375181B2 (ja) * | 2014-08-28 | 2018-08-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN106158637B (zh) * | 2015-03-31 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
| CN106158638B (zh) * | 2015-04-01 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
| CN105120143B (zh) * | 2015-07-28 | 2019-03-29 | 深圳市理邦精密仪器股份有限公司 | 电子阴道镜消除图像光斑的方法及装置 |
| JP6557095B2 (ja) | 2015-08-26 | 2019-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2017045947A (ja) | 2015-08-28 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6578172B2 (ja) | 2015-09-18 | 2019-09-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5982055B1 (ja) * | 2015-12-18 | 2016-08-31 | 株式会社フローディア | メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法 |
| JP6594198B2 (ja) | 2015-12-28 | 2019-10-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6718248B2 (ja) | 2016-02-17 | 2020-07-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6620034B2 (ja) | 2016-02-24 | 2019-12-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6591311B2 (ja) * | 2016-02-24 | 2019-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6629142B2 (ja) | 2016-06-03 | 2020-01-15 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6652451B2 (ja) | 2016-06-14 | 2020-02-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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| JP2018056453A (ja) | 2016-09-30 | 2018-04-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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| CN106981422B (zh) * | 2017-03-01 | 2020-03-24 | 中国科学院微电子研究所 | 一种垂直tfet及其制造方法 |
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| JP6783710B2 (ja) * | 2017-06-22 | 2020-11-11 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2019050314A (ja) | 2017-09-11 | 2019-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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| JP7053388B2 (ja) | 2018-06-28 | 2022-04-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP7117223B2 (ja) | 2018-11-08 | 2022-08-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP7200054B2 (ja) | 2019-06-24 | 2023-01-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2021082656A (ja) | 2019-11-15 | 2021-05-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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| US5055716A (en) * | 1990-05-15 | 1991-10-08 | Siarc | Basic cell for bicmos gate array |
| JP3228996B2 (ja) * | 1992-03-30 | 2001-11-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US5604146A (en) * | 1996-06-10 | 1997-02-18 | Vanguard International Semiconductor Corporation | Method to fabricate a semiconductor memory device having an E-shaped storage node |
| JP3710880B2 (ja) * | 1996-06-28 | 2005-10-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US5969383A (en) | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
| US6383861B1 (en) * | 1999-02-18 | 2002-05-07 | Micron Technology, Inc. | Method of fabricating a dual gate dielectric |
| JP3973819B2 (ja) * | 1999-03-08 | 2007-09-12 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
| JP2001036048A (ja) * | 1999-07-16 | 2001-02-09 | Denso Corp | 半導体メモリ及びその製造方法 |
| JP4068781B2 (ja) * | 2000-02-28 | 2008-03-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置および半導体集積回路装置の製造方法 |
| EP1172856A1 (en) * | 2000-07-03 | 2002-01-16 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile semiconductor memory device and method for fabricating the same |
| JP4904631B2 (ja) * | 2000-10-27 | 2012-03-28 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| KR100338783B1 (en) | 2000-10-28 | 2002-06-01 | Samsung Electronics Co Ltd | Semiconductor device having expanded effective width of active region and fabricating method thereof |
| DE10241171A1 (de) * | 2002-09-05 | 2004-03-18 | Infineon Technologies Ag | Wort- und Bitleitungsanordnung für einen FINFET-Halbleiterspeicher |
| JP2004186452A (ja) | 2002-12-04 | 2004-07-02 | Renesas Technology Corp | 不揮発性半導体記憶装置およびその製造方法 |
| DE10260334B4 (de) * | 2002-12-20 | 2007-07-12 | Infineon Technologies Ag | Fin-Feldeffektransitor-Speicherzelle, Fin-Feldeffekttransistor-Speicherzellen-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Speicherzelle |
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| CN1728401A (zh) | 2006-02-01 |
| TW200625553A (en) | 2006-07-16 |
| US7847343B2 (en) | 2010-12-07 |
| US20060022260A1 (en) | 2006-02-02 |
| US20090152619A1 (en) | 2009-06-18 |
| JP2006041354A (ja) | 2006-02-09 |
| CN1728401B (zh) | 2011-05-25 |
| US7504689B2 (en) | 2009-03-17 |
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