CN1343376A - 用于生产半导体p,p+ 和n,n+区的掺杂糊剂 - Google Patents
用于生产半导体p,p+ 和n,n+区的掺杂糊剂 Download PDFInfo
- Publication number
- CN1343376A CN1343376A CN00804875A CN00804875A CN1343376A CN 1343376 A CN1343376 A CN 1343376A CN 00804875 A CN00804875 A CN 00804875A CN 00804875 A CN00804875 A CN 00804875A CN 1343376 A CN1343376 A CN 1343376A
- Authority
- CN
- China
- Prior art keywords
- doping
- sio
- compounds
- paste
- paste according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H10P95/50—
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- H10P32/141—
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/02—Polysilicates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
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- H10P32/16—
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- H10P32/171—
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- H10P32/19—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Die Bonding (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19910816A DE19910816A1 (de) | 1999-03-11 | 1999-03-11 | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| DE19910816.1 | 1999-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1343376A true CN1343376A (zh) | 2002-04-03 |
Family
ID=7900579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00804875A Pending CN1343376A (zh) | 1999-03-11 | 2000-02-29 | 用于生产半导体p,p+ 和n,n+区的掺杂糊剂 |
Country Status (16)
| Country | Link |
|---|---|
| US (1) | US6695903B1 (enExample) |
| EP (2) | EP2276058B1 (enExample) |
| JP (1) | JP2002539615A (enExample) |
| KR (1) | KR100697439B1 (enExample) |
| CN (1) | CN1343376A (enExample) |
| AT (1) | ATE535943T1 (enExample) |
| AU (1) | AU766807B2 (enExample) |
| CA (1) | CA2367137A1 (enExample) |
| DE (1) | DE19910816A1 (enExample) |
| IL (2) | IL145333A0 (enExample) |
| IN (1) | IN2001KO01049A (enExample) |
| MX (1) | MXPA01009113A (enExample) |
| NO (1) | NO20014384D0 (enExample) |
| PL (1) | PL350966A1 (enExample) |
| TW (1) | TW492081B (enExample) |
| WO (1) | WO2000054341A1 (enExample) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102057466A (zh) * | 2008-08-20 | 2011-05-11 | 霍尼韦尔国际公司 | 含磷掺杂剂以及使用含磷掺杂剂在半导体衬底中形成磷掺杂区域的方法 |
| CN102549776A (zh) * | 2009-07-31 | 2012-07-04 | Otb太阳能有限公司 | 具有选择性发射极的光伏电池及其制造方法 |
| CN102576580A (zh) * | 2009-09-08 | 2012-07-11 | E.I.内穆尔杜邦公司 | 用于光伏电池的导体 |
| CN1883012B (zh) * | 2003-11-18 | 2012-08-08 | 默克专利有限公司 | 功能性糊 |
| CN102797040A (zh) * | 2012-08-22 | 2012-11-28 | 中国科学院电工研究所 | 一种硼(b)扩散掺杂的方法 |
| CN102844841A (zh) * | 2010-04-23 | 2012-12-26 | 日立化成工业株式会社 | n型扩散层形成组合物、n型扩散层的制造方法及太阳能电池元件的制造方法 |
| CN102859707A (zh) * | 2009-10-30 | 2013-01-02 | 默克专利股份有限公司 | 用于制造具有选择性发射极的太阳能电池的方法 |
| CN102870197A (zh) * | 2010-04-23 | 2013-01-09 | 日立化成工业株式会社 | n型扩散层形成组合物、n型扩散层的制造方法和太阳能电池元件的制造方法 |
| CN103348449A (zh) * | 2011-02-17 | 2013-10-09 | 日立化成株式会社 | n型扩散层形成用组合物、n型扩散层的制造方法和太阳能电池单元的制造方法 |
| CN103650111A (zh) * | 2011-07-05 | 2014-03-19 | 日立化成株式会社 | n型扩散层形成用组合物、n型扩散层的制造方法以及太阳能电池元件的制造方法 |
| CN103748101A (zh) * | 2011-08-25 | 2014-04-23 | 霍尼韦尔国际公司 | 硼酸酯、含硼掺杂剂和制造含硼掺杂剂的方法 |
| CN104884684A (zh) * | 2012-12-28 | 2015-09-02 | 默克专利股份有限公司 | 用于从硅晶片吸除杂质的氧化物介质 |
| CN104884685A (zh) * | 2012-12-28 | 2015-09-02 | 默克专利股份有限公司 | 用于硅晶片的局部掺杂的掺杂介质 |
| CN104903497A (zh) * | 2012-12-28 | 2015-09-09 | 默克专利股份有限公司 | 用于硅晶片的可印刷的扩散阻挡层 |
| CN107532300A (zh) * | 2015-04-15 | 2018-01-02 | 默克专利股份有限公司 | 用于硅晶片的局部掺杂的抑制寄生扩散和基于溶胶‑凝胶的可印刷的掺杂介质 |
| CN108257857A (zh) * | 2018-01-11 | 2018-07-06 | 华东理工大学 | 一种多元醇硼酸酯络合物硼扩散源及其制备方法 |
| CN108886068A (zh) * | 2016-03-23 | 2018-11-23 | 松下知识产权经营株式会社 | 太阳能电池、太阳能电池组件和太阳能电池的制造方法 |
| CN111628047A (zh) * | 2020-06-01 | 2020-09-04 | 江苏顺风光电科技有限公司 | 一种N型TOPCon太阳能电池的制作方法 |
| CN114038741A (zh) * | 2021-11-23 | 2022-02-11 | 浙江尚能实业股份有限公司 | 一种复合磷扩散源及其制备方法和半导体掺杂加工的方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1276701B1 (de) * | 2000-04-28 | 2012-12-05 | Merck Patent GmbH | Ätzpasten für anorganische oberflächen |
| JP3922334B2 (ja) * | 2000-07-12 | 2007-05-30 | サンケン電気株式会社 | 半導体装置の製造方法 |
| JP3922337B2 (ja) * | 2000-08-28 | 2007-05-30 | サンケン電気株式会社 | 液状不純物源材料及びこれを使用した半導体装置の製造方法 |
| DE10058031B4 (de) * | 2000-11-23 | 2007-11-22 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Bildung leicht dotierter Halogebiete und Erweiterungsgebiete in einem Halbleiterbauelement |
| DE10104726A1 (de) | 2001-02-02 | 2002-08-08 | Siemens Solar Gmbh | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
| JP2002299274A (ja) * | 2001-04-02 | 2002-10-11 | Sanken Electric Co Ltd | 半導体装置の製造方法 |
| JP4726354B2 (ja) * | 2001-08-22 | 2011-07-20 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
| JP2003179243A (ja) * | 2001-08-31 | 2003-06-27 | Basf Ag | 光電池活性材料およびこれを含む電池 |
| DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
| JP3910072B2 (ja) * | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
| JP4368230B2 (ja) * | 2004-03-30 | 2009-11-18 | 電気化学工業株式会社 | ホウ素化合物の固定方法及びホウ素拡散源 |
| CN100538915C (zh) * | 2004-07-01 | 2009-09-09 | 东洋铝株式会社 | 糊组合物及使用该糊组合物的太阳能电池元件 |
| JP2006156646A (ja) * | 2004-11-29 | 2006-06-15 | Sharp Corp | 太陽電池の製造方法 |
| US7790574B2 (en) * | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
| JP4481869B2 (ja) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
| JP2006310368A (ja) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法及び太陽電池 |
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| FR2906405B1 (fr) * | 2006-09-22 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique |
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| JP4868079B1 (ja) * | 2010-01-25 | 2012-02-01 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池セルの製造方法 |
| JP5447397B2 (ja) * | 2010-02-03 | 2014-03-19 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池セルの製造方法 |
| US20110195540A1 (en) * | 2010-02-05 | 2011-08-11 | Hitachi Chemical Company, Ltd. | Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell |
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Also Published As
| Publication number | Publication date |
|---|---|
| US6695903B1 (en) | 2004-02-24 |
| EP1166366B1 (de) | 2011-11-30 |
| EP2276058A1 (de) | 2011-01-19 |
| EP1166366A1 (de) | 2002-01-02 |
| TW492081B (en) | 2002-06-21 |
| NO20014384L (no) | 2001-09-10 |
| JP2002539615A (ja) | 2002-11-19 |
| EP2276058B1 (de) | 2016-02-17 |
| DE19910816A1 (de) | 2000-10-05 |
| CA2367137A1 (en) | 2000-09-14 |
| KR100697439B1 (ko) | 2007-03-20 |
| IL145333A (en) | 2009-06-15 |
| NO20014384D0 (no) | 2001-09-10 |
| KR20010112313A (ko) | 2001-12-20 |
| IL145333A0 (en) | 2002-06-30 |
| ATE535943T1 (de) | 2011-12-15 |
| MXPA01009113A (es) | 2002-02-28 |
| WO2000054341A1 (de) | 2000-09-14 |
| AU3960100A (en) | 2000-09-28 |
| AU766807B2 (en) | 2003-10-23 |
| PL350966A1 (en) | 2003-02-24 |
| IN2001KO01049A (enExample) | 2006-03-17 |
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