CN110692121B - 通过高压处理的钨脱氟 - Google Patents

通过高压处理的钨脱氟 Download PDF

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CN110692121B
CN110692121B CN201880034565.8A CN201880034565A CN110692121B CN 110692121 B CN110692121 B CN 110692121B CN 201880034565 A CN201880034565 A CN 201880034565A CN 110692121 B CN110692121 B CN 110692121B
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基思·塔特森·王
托马斯·琼万·权
肖恩·康
怡利·Y·叶
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Applied Materials Inc
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Abstract

与用于处理在工件上的钨膜的工艺相关的方法和系统包括：将工件支撑在腔室中；将氢气引入腔室中且建立至少5个大气压的压力；并且当腔室中的压力是至少5个大气压时，将工件上的钨膜暴露于氢气。

Description

通过高压处理的钨脱氟
技术领域
本发明涉及在诸如半导体晶片之类的工件上的钨膜的高压处理。
背景技术
微电子电路和其他微尺度装置通常是通过在基板或晶片(诸如硅或其他半导体材料晶片)上顺序沉积和图案化多个层来制造。对于一些应用，金属膜(例如，钨)沉积在基板上以形成微电子或其他微尺度部件或以提供电互连。
对于一些层，为了实现所需材料性质，基板通常经受退火工艺，在所述退火工艺中，基板常常被快速加热至约200℃至500℃，且更典型地至约300℃至400℃。基板可被保持在所述温度达相对较短的时间，例如60至300秒。基板随后可快速地冷却，其中整个过程通常仅花费几分钟。退火可用于改变基板上的层的材料性质。退火也可用于活化掺杂剂、驱动基板上的膜之间的掺杂剂、改变膜对膜或膜对基板界面、致密化沉积的膜、或修复来自离子注入的损坏。
随着用于微电子装置和互连的特征尺寸变得更小，可允许的缺陷率实质上减小。一些缺陷由嵌入在一个或多个层中的污染产生。
发明内容
在一方面中，处理工件上的钨膜包括：将工件支撑在腔室中，将氢气引入腔室中，在腔室中建立至少5个大气压的压力；并且当腔室中的压力是至少5个大气压时，将工件上的钨膜暴露于氢气。
此方面的其他实施方式包括被配置以执行在计算机存储装置上编码的方法的动作的对应系统、设备和计算机程序。
这些和其他实施方式可各自可选择地包括以下特征的一个或多个。
钨膜的温度可升高至在250℃至600℃之间。钨膜的温度可通过在升高的温度下保持对腔室中的工件的支撑来升高。钨膜的温度可在腔室中建立至少5个大气压的压力之前升高。
在腔室中建立压力可包括引入氢气和惰性气体以在腔室中提供气体混合物。腔室中的气体混合物中的氢气可在气体混合物的体积百分比的1％至4％之间。腔室中的气体混合物中的惰性气体可包括氮气和/或氩气。当氢气具有1至10巴(bar)的分压时，钨膜可暴露于氢气。
钨膜可以是所制造的三维NAND(three-dimensional NAND；3D NAND)结构的一部分。
在另一方面中，一种在工件上形成钨的方法包括：使用含有钨和氟的前驱物气体通过化学气相沉积在工件上沉积钨膜；并且当腔室中的压力是至少5个大气压时，将工件上的钨膜暴露于腔室中的氢气。
钨膜可以是制造中的三维NAND(3D NAND)的一部分。前驱物气体可包括六氟化钨。钨膜升高至250℃至600℃之间的温度。腔室压力可通过引入氢气和惰性气体(例如，氩气和/或氮气)以在腔室中提供气体混合物来建立。
在另一方面中，一种退火系统包括：腔室主体，界定腔室；支撑件，用于保持工件，其中工件的外表面暴露于腔室中的环境；机械手，用于将工件插入腔室中；第一气源，用于提供氢气；压力源，耦接至腔室以将腔室中的压力升高至至少5个大气压；和控制器，耦接至机械手、第一气源和压力源。控制器被配置成使得机械手将其上具有钨膜的工件运输至腔室中，使得气源供应氢气至腔室，并且使得压力源当工件保持在腔室中的支撑件上时将腔室中的压力升高至至少5个大气压。
退火系统可包括加热器，以将支撑件上的工件的温度升高至250℃至600℃之间。加热器可包括嵌入在支撑件中的电阻加热器，和/或加热器可为位于腔室主体的壁中的辐射加热器，所述辐射加热器被定位成照射支撑件上的工件。压力源可包括泵。
退火系统可包括第二气源以供应惰性气体(例如，氩气和/或氮气)至腔室，并且控制器可耦接至第二气源，并且可被配置成使得第一气源引入氢气和使得第二气源引入惰性气体以在腔室中提供气体混合物。
在本说明书中描述的主题的具体实施方式可被实施以便实现以下优点的一个或多个。钨膜的沉积后退火可通过降低钨膜中的氟的存在来提高膜品质。减少氟可降低缺陷的可能性并且可增加产量。对脱氟的高压气体的使用允许通过提高气体至层中的扩散、维持工件的处理后的相对较低的热预算并且保持整体层结构质量来在退火工艺期间使用低温。另外，沉积的低温可用于沉积钨膜，从而降低由较高的温度沉积产生的层混合。
在附图和以下描述中阐述了本发明的一个或多个实施方式的细节。本发明的其他特征、目标和优点将从描述和附图、和从权利要求书中显而易见。
附图说明
图1是高压基板处理系统的方块图。
图2是用于通过在高压基板处理系统中的高压处理来进行钨脱氟的示例性工艺流程的流程图。
图3示出示例性高压基板处理系统。
图4示出高压基板处理系统的另一示例。
在各个附图中的类似参考符号指示类似的元件。
具体实施方式
介绍
通常，需要降低在工件上沉积的层的缺陷密度，例如，在半导体晶片(例如用于制造3D NAND结构的半导体晶片)上沉积的钨膜的缺陷密度。缺陷密度可以各种方式出现，包括来自用于钨膜的沉积工艺的前驱物气体(例如，六氟化钨)的残留物。减少沉积的钨膜中的残留氟可降低有害影响，诸如导致相邻层中的缺陷的无意的氧化物蚀刻和邻近于钨膜沉积的栅极氧化物中的减小的k值。
下文描述了用于高压处理的系统和方法以使用高压退火来将钨膜脱氟。沉积在工件上的钨膜暴露于形成气体(forming gas)(例如，4％的氢气与惰性气体混合)的高压(例如，至少5个大气压)下，同时在高温(例如，200℃至500℃)下保持几分钟至一小时。
系统
图1是高压基板处理系统100的方块图。高压基板处理系统100包括高压腔室102。高压腔室102被配置成包含至少5个大气压(例如，至少10个大气压)的压力，并且能够保持高达10^-3托(torr)的真空水平。在一些实施方式中，高压基板处理系统100包括低压环境104(例如，真空环境)，用于当工件在处理腔室之间传送时(例如，从另一处理腔室传送至高压腔室102中时)，可彼此独立地控制高压腔室102和低压腔室104内的相对压力。
包括机械臂的机械手(图1中未示出)可用于传送工件进出高压腔室102，例如，在多腔室基板处理工具的腔室之间传送。
高压腔室102包括支撑件，例如用于支撑高压腔室102中的工件的基座106。基座106可使用各种支撑机构来支撑一个或多个工件，例如基座106可使用锁定销(lockingpin)和弹簧来支撑工件，和/或工件可直接放置在基座106的顶部上。
在一些实施方式中，高压腔室102包括一个或多个加热元件108。例如，加热元件108a是电阻加热器并且集成至基座106中用于加热工件。在一些实施方式中，高压腔室102包括加热元件108b，其中加热元件108b可在高压腔室102内加热和维持所选择的温度。加热元件108b可以是在高压腔室主体的壁中嵌入的辐射加热器，并且被定位成照射基座106上的工件。当工件支撑在基座106上并且气体(若使用)已被引入至高压腔室102中时，来自加热元件108的热量可足以将工件退火。加热元件108可以是电阻加热元件，并且可传导地和/或辐射地加热工件。另外，加热元件108可包括分立的加热线圈、或辐射加热器(例如，红外线灯)。
气体输送系统110可操作以使高压腔室102加压和减压。气体输送系统110提供气体混合物至高压腔室102以建立高压，例如至少5个大气压的压力。在一些实施方式中，气体输送系统110包括排放系统112以从高压腔室102排放气体，从而使高压腔室102减压。气体输送系统包括压力源以将腔室102中的压力升高至高压。压力源可包括泵，例如旋转泵、涡旋泵、和/或螺杆泵，这些泵被配置成将气体泵送至腔室102中，直至达到所需压力；和/或包括压缩气瓶(compressed gas cylinder)，所述压缩气瓶的压力足以使得在气瓶流体连接至腔室102之后，平衡压力将达到所需压力。
泵送系统114包括用于降低高压腔室102和/或真空腔室104中的压力的一个或多个泵。泵可包括旋转泵、涡旋泵、和/或螺杆泵。例如，泵送系统114可用于将真空腔室104中的压力降低至处于真空或接近真空压力，例如，小于1毫托(milliTorr)。在另一示例中，泵送系统114可在高压腔室102的泵送和净化循环期间使用，以在工艺操作之前降低高压腔室102中的污染物的存在。
在一些实施方式中，阀组件116将高压腔室102与真空腔室104之间的相对压力隔离。在高压腔室102内的高压环境可从而与真空腔室104内的低压环境隔离且密封。阀组件116可操作以使工件直接在高压腔室102与真空腔室104之间传送。
在一些实施方式中，高压基板处理系统100包括前级管道(foreline)118，所述前级管道118连接至真空腔室104且连接至外部环境。隔离阀120被沿着前级管道118布置以将真空腔室104内的压力与外部环境的压力隔离。隔离阀120可操作以调整真空腔室104内的压力并且释放真空腔室104内的气体。隔离阀120可结合泵送系统114操作以调节真空腔室104内的压力。
高压基板处理系统100的一个或多个操作可由一个或多个控制器122控制。控制器122(例如，通用可编程计算机)被连接至并且可操作以控制高压基板处理系统100的各种部件的一些或全部。由控制器122控制的操作可包括例如，高压腔室102内的加热元件108的温度调节、高压腔室102内的压力调节、真空腔室104内的真空调节、气体输送系统110的流量(flow rate)和气体输送、和泵送系统114中的一个或多个泵的操作。例如，控制器122可被程序化以产生控制信号，所述控制信号使得高压基板处理系统100的部件执行下文参照图2所描述的工艺。
钨膜的高压处理
图2是用于通过在高压基板处理系统100中的高压处理来对工件上的钨膜进行脱氟的示例性工艺流程200的流程图。在一个示例中，工件包括半导体基板(例如，硅)，其具有沉积在基板上的钨膜。在一些实施方式中，钨膜形成在基板上制造的3D NAND结构的一部分；并且工件也可包括其他材料(例如，SiN、TiN)的层。钨膜可在单独的处理步骤中使用化学气相沉积(CVD)沉积在工件上。在一些实施方式中，钨膜是使用原子层沉积(atomiclayer deposition；ALD)来沉积的。
工件例如通过机械手被插入至腔室中，并且随后支撑在腔室中，例如在高压腔室102内的基座106上(202)。在一些实施方式中，高压腔室102和/或基座106是使用一个或多个加热元件108保持在特定温度(例如，300℃至500℃)下。高压腔室102和/或基座106的温度可在将工件引入高压腔室102之前建立。此外，当工件由高压腔室102中的基座106支撑时，工件(例如，基板上的钨膜)的温度可通过使用一个或多个加热元件108在特定温度(例如，250℃至600℃)下建立。在一些实施方式中，在高压腔室102中建立至少5个大气压的压力之前，升高工件(例如，基板上的钨膜)的温度。
将氢气引入至高压腔室102中(204)。氢气可以是H2或氘气(D2)的形式。氢气可以是包括一种或多种惰性气体(例如，氮气和/或氩气)的形成气体的一部分。在一些实施方式中，在形成气体中的氢气的百分比是至少1％，和至多4.5％的体积百分比。惰性气体可在由气体输送系统110输送至高压腔室102中之前与氢气混合，或者惰性气体和氢气可由气体输送系统110的各个喷嘴输送至高压腔室102中，并且在高压腔室102中混合。
气体输送系统110可在高压腔室102中建立5至50个大气压的总压力(惰性气体和氢气)(206)。在一些实施方式中，高压腔室102中的总压力是至少10个大气压。高压腔室102中的压力可被建立为静态压力。在一些实施方式中，高压腔室中的压力是由通过气体输送系统110的入口/出口流动形成气体至高压腔室102中来建立。在一些实施方式中，当氢气具有1至10巴的分压时，钨膜暴露于氢气。
在高压腔室102中建立所需压力之后，将工件上的钨膜暴露于氢气，同时高压腔室102保持在升高压力下(208)。暴露时间包括几分钟至几小时(例如，至少5分钟，且不超过一小时)。在一些实施方式中，退火温度(在退火工艺期间的工件的温度)、高压腔室102中的氢气分压、和对于脱氟工艺的暴露时间可以是相关的，以使得可通过调整上述(和其他)变量来找到最佳操作参数。
在不限于任何特定理论的情况下，分子氢气在加热的钨膜的表面上裂化为原子氢且随后沿着钨膜的晶界扩散。反应物(例如，裂化的氢)至钨膜中的扩散可能是发生脱氟工艺的速率的限制因素。随着裂化的氢扩散至钨膜中，裂化的氢与在钨膜表面上或嵌入在钨膜内的氟键合。键合的氢和氟形成可随后从钨膜扩散出的氟化氢。原子氢可另外地用于削弱和破坏钨膜中的氟和钨之间的键。
在一些实施方式中，在工件的加热工艺之前或期间，氢气通过气体输送系统110被引入高压腔室102中。例如，当加热元件108使基座106上的工件达到特定所需温度时，高压氢气可被引入至高压腔室102中。
在一些实施方式中，当工件在真空腔室104中时可被加热至特定温度，并且随后由机械手(未示出)传送至高压腔室102，氢气可引入所述高压腔室。
在一些实施方式中，钨膜沉积在工件上，所述工件随后经历本文所述的高压处理。例如，钨膜可使用含有钨和氟的前驱物气体(例如，六氟化钨)通过化学气相沉积(CVD)沉积在工件上。在一些实施方式中，六氟化钨可用作前驱物气体以沉积钨膜。在沉积的钨膜内捕集的残留氟量可部分地取决于沉积温度(例如，较低的沉积产生较高浓度的残留氟)。当在高压腔室102中的压力是至少5个大气压时，钨膜可随后暴露于高压腔室102中的氢气。
高压基板处理系统的实施方式
图3和图4示出了高压基板处理系统的两个实施方式。图3示出了示例性高压基板处理系统300，包括第一腔室302(例如，高压腔室102)、基座304、第二腔室306(例如，真空腔室104)、和控制器(例如，控制器122)。高压基板处理系统300进一步包括与相对于图1所描述的泵送系统114类似的泵送系统(未示出)和与相对于图1所描述的气体输送系统110类似的气体输送系统307。例如，气体输送系统307包括输入管线307a和排放管线307b。前驱物气体通过输入管线307a被引入第一腔室302中，并且前驱物气体通过排放管线307b从第一腔室302排放。
基座304支撑工件314，在所述工件上，材料膜(例如，钨膜)将通过高压处理来脱氟。基座304定位在或可定位在第一腔室302内。在一些实施方式中，基板314直接位于基座的平坦顶表面上。在一些实施方式中，基板314位于从基座突出的销330上。
高压基板处理系统300包括内壁320、底座322、和外壁324。第一腔室302是由内壁320之内的容积(例如，在内壁320与底座322之间)提供。第二腔室306是由内壁320之外的容积(例如，在内壁320与外壁324之间)提供。
高压基板处理系统300进一步包括位于第一腔室302与第二腔室306之间的阀组件316，所述阀组件提供图1的阀组件116的功能性，即，所述阀组件可操作以将第一腔室302与第二腔室306隔离。例如，阀组件316包括内壁320、底座322和致动器323，所述致动器将底座322相对于内壁320移动。致动器323可被控制以驱动底座322以例如远离或朝向界定第一腔室302的壁320垂直移动。波纹管328可用于将第二腔室306与外部大气密封，同时允许底座322垂直移动。波纹管328可从底座322的底部延伸至由外壁324形成的第二腔室306的底板。
当阀组件316处于关闭位置时，底部322与壁320接触，以使得在底部322与壁320之间形成密封，从而将外部腔室306与内部腔室302分离。致动器323被操作以利用足够的力驱动底座322朝向内壁320以形成密封。所述密封阻止来自第一高压腔室302的空气排放至低压第二腔室306中。
当阀组件316处于开放位置时，底座322与壁320间隔开，从而允许空气在第一腔室302与第二腔室306之间传导，并且还允许基板314被够到并且传送至另一腔室。
因为基座304是支撑在底座322上，所以基座304从而也相对于内壁320可移动。基座304可移动以使得基板314更易于被传送机械手够到。例如，传送机械手(未示出)的臂可延伸通过外壁324中的孔(aperture)326。当阀组件316处于打开位置时，机械臂可通过内壁320与底座322之间的间隙以够到基板314。
在一些实施方式中，高压基板处理系统300包括被配置以施加热量至基板314的一个或多个加热元件318。当基板314被支撑在基座304上并且前驱物气体(若使用)已被引入至第一腔室302中时，来自加热元件318的热量可足以将基板314退火。加热元件318可以是电阻加热元件。一个或多个加热元件318可定位在，例如嵌入在界定第一腔室302的内壁320中。这样将内壁320加热，使得辐射热量到达基板314。基板314可由基座304保持成紧密接近于内壁的顶板，以提高热量从内壁320至基板314的传输。
然而，一个或多个加热元件318可布置在高压基板处理系统300内的其他位置中，例如，布置在侧壁而不是顶板内。加热元件318的示例包括分立的加热线圈。作为嵌入内壁320中的加热器的替代或除了所述加热器以外，辐射加热器(例如，红外线灯)可位于第一腔室302外部并且将红外线辐射引导通过内壁320中的窗口。电线将诸如电压源之类的电源(未示出)连接至加热元件，并且可将一个或多个加热元件318连接至控制器。
控制器可操作地连接至泵送系统、气体输送系统307、阀组件316，用于控制操作以执行在基板314上的材料层的高压处理。在一些实施方式中，控制器也可可操作地连接至其他系统。例如，控制器也可可操作地连接至传送机械手(未示出)、一个或多个加热元件318、和/或致动器323的一个或多个。在一些情况下，图1中所示的控制器122包括高压基板处理系统300的控制器。
在用于执行基板314上的材料层的高压处理的工艺中，控制器可操作泵送系统以使第二腔室306减压至低压状态，例如至第二腔室306具有小于1个大气压的的压力的状态，以准备基板314通过第二腔室306的传送。低压状态可以是接近真空状态，例如，小于1毫托的压力的状态。基板314通过传送机械手(未示出)移动通过第二腔室306，同时第二腔室306处于低压下以便能够抑制基板314的污染和氧化。
基板314被传送至第一腔室302中以便处理。为了将基板314传送至第一腔室302中，控制器可操作阀组件316，例如打开阀组件316以提供基板314可通过其传送至第一腔室302中的开口。控制器可操作传送机械手以将基板314运载至第一腔室302中并且将基板314放置在基座304上。
在基板314被传送至第一腔室302中之后，控制器可操作阀组件316以关闭开口(例如，关闭阀组件316)，从而将第一腔室302与第二腔室306彼此隔离。在阀组件316关闭的情况下，第一腔室302和第二腔室306中的压力可被设置为不同值。控制器可操作气体输送系统307以将氢气引入第一腔室302中，以使第一腔室302加压。氢气的引入可将第一腔室302内的压力增加例如至5个大气压或更大压力。
第一腔室302中的氢气和适当温度和压力条件可引起材料的高压处理发生，例如，如参照图2所描述的。在高压处理期间，控制器可操作一个或多个加热元件318以增加热量至基板314，以促进在基板314上的材料层的退火。
当高压处理完成时，可使用传送机械手将基板314从第一腔室302移除；并且如果必要，基板314可被传送至后续处理腔室或至外部环境。或者，基板314被传送至负载锁定腔室(未示出)。为了准备将基板314传送出第一腔室302，控制器可在阀组件316打开之前操作气体输送系统307的排放系统以使第一腔室302减压。具体地，在基板314被传送出第一腔室202之前，从第一腔室302排放前驱物气体以降低第一腔室202内的压力。第一腔室302中的压力可降低至接近真空压力，以使得在第一腔室302与第二腔室306之间的压力差可最小化。
为了使得基板314能够从第一腔室302传送出，控制器可打开阀组件316。打开的阀组件316提供一开口，基板314通过所述开口被移动以传送至第二腔室306中。具体地，打开的阀组件316使得基板314被直接传送至第二腔室306中，例如，至第二腔室306的低压环境中。
图4示出了高压基板处理系统400的另一示例，包括第一腔室402(例如，高压腔室102)、基座404、第二腔室406(例如，真空腔室104)，和与图1中所示的控制器122类似的控制器。高压基板处理系统400与相对于图3所描述的高压基板处理系统300类似；除非另外指定，否则各种选项和实施方式也适用于此实施方式。
例如，高压基板处理系统400的气体输送系统和泵送系统是以用于维持对于使用高压基板处理系统400处理的基板414的低压和高压环境的类似方式来操作。第二腔室406可由在内壁420与外壁424之间的容积来界定。此外，基板414也可支撑在基座404上，以在第一腔室402内进行处理。再次，基板可直接位于基座404上，或位于延伸穿过基座的升降销430上。
高压基板处理系统400在一些方面不同于图3的高压基板处理系统300。首先，界定第一腔室402的内壁420相对于界定第一腔室402的底座422不可移动。基座404从而相对于内壁420和底座422固定。在一些示例中，基座404被固定至界定第一腔室402的底座422。
图4中所示的实施方式的一个或多个加热元件418不是如对于图3的实施方式的一个或多个加热元件318的情况所示的那样布置在第一腔室402的内壁420中，，而是布置在基座404内。基板414从而通过与基座404接触而被加热。
高压基板处理系统400进一步包括位于第一腔室402与第二腔室406之间的阀组件416，类似于图3的阀组件316，所述阀组件416将第一腔室402与第二腔室406隔离。然而，与阀组件316不同，阀组件416不是由界定第一腔室402的壁420和底座422形成，而是由相对于第一腔室402的内壁420和底座422可移动的臂425形成。臂425可相对于第一腔室402的内壁420和底座422移动。
具体地，阀组件416包括位于第一腔室402与第二腔室406之间的狭缝阀423。狭缝阀423包括狭缝423a和臂425。狭缝423a延伸通过第一腔室402的内壁420的一个。臂425的近端425a定位在第一腔室402的外部，而臂425的远端425b定位在第一腔室402内。臂425的近端425a可定位在第二腔室406内，并且可由位于第二腔室406内的致动器驱动。或者，臂425的近端425a可定位在第二腔室406外部，并且从而由同样位于第二腔室406外部的致动器428驱动。
臂425延伸通过狭缝423a并且相对于壁420可移动，以便臂425可被移动至其中所述臂可与壁420形成密封的位置。致动器428耦接至臂425的近端425a并且相对于壁420驱动臂425的远端425b。臂425也可垂直移动以覆盖或露出狭缝423a。具体地，臂425的远端425b可以是或包括凸缘，所述凸缘大致平行于内壁420的相邻内表面延伸。臂425也可侧向地移动或驱动，以便臂425的远端425b可与内壁420接合或脱离。
臂425也可延伸通过外壁424中的孔426。
类似于阀组件316，阀组件416在打开位置与关闭位置之间可移动。当阀组件416处于关闭位置中时，臂425的远端425b覆盖狭缝423a并且接触内壁420的一个，从而形成密封以将第一腔室402与第二腔室406隔离。具体地，臂425的远端425b(例如，凸缘)接触界定第一腔室402的壁420的内表面。
当阀组件416处于打开位置时，臂425的远端425b与内壁420(例如，内壁420的内表面)侧向地间隔开。此外，臂425的远端425b被垂直定位以便露出狭缝423a。狭缝423a从而提供一开口，所述开口实现第一腔室402和第二腔室406之间的流体连通，并且还实现例如通过如上文论述的机械手将基板414移入和移出第一腔室402。
控制器可以与相对于高压基板处理系统300的控制器描述的过程类似的方式操作高压基板处理系统400，以将基板414传送进出第一腔室402并且在基板414上的材料层上执行高压处理。在此过程中，为了打开或关闭阀组件416，控制器可操作致动器428以驱动臂425。
图4中所示的配置的优点在于：第一腔室402内的压力有助于将臂425的远端425b推抵内壁420的内表面。结果，与图3中所示的配置相比，致动器可不那么强大。
本文描述的系统的控制器和其他计算装置部分可在数字电子电路系统中，或在计算机软件、固件或硬件中实施。例如，控制器可包括执行如存储在计算机程序产品中(例如，在非暂时性机器可读存储介质中)的计算机程序的处理器。这种计算机程序(又称为程序、软件、软件应用程序或代码)可以任何形式的程序设计语言编写，所述语言包括编译或解释语言，并且所述计算机程序可以任何形式部署，包括如独立程序或如适合在计算环境中使用的模块、部件、子程序或其他单元。
虽然本文件包含许多特定的实施方式细节，但是所述实施方式细节不应解释为对任何发明或可能要求保护的范围的限制，而是作为针对特定发明的特定实施方式的特征的描述。在各个实施方式的上下文中的本文件中描述的某些特征也可在单个实施方式中组合实施。相反地，在单个实施方式的上下文中描述的各个特征也可分别在多个实施方式中或以任何适当的子组合实施。此外，尽管上文可将特征描述为以某些组合起作用并且甚至最初如此要求保护，但是可在一些情况下从组合中去除来自所要求保护的组合的一个或多个特征，并且所要求保护的组合可涉及子组合或子组合的变化。
相应地，其他实施方式在以下权利要求书的范围之内。

Claims (20)

1.一种处理工件上的钨膜的方法，包括：
将所述工件支撑在腔室中；
将氢气引入所述腔室中；
在所述腔室中建立至少5个大气压的压力；
当在所述腔室中的所述压力是至少5个大气压时，将所述工件上的所述钨膜暴露于所述氢气，其中所述钨膜包括在所述钨膜的表面上或嵌入在所述钨膜内的氟；
通过将所述钨膜暴露于所述氢气而在所述钨膜上形成原子氢；并且
由所述原子氢和所述氟形成氟化氢。
2.如权利要求1所述的方法，进一步包括：加热所述钨膜至约250℃至约600℃的温度。
3.如权利要求2所述的方法，其中加热所述钨膜包括在升高的温度下保持对所述腔室中的所述工件的支撑。
4.如权利要求3所述的方法，其中所述钨膜的所述温度在所述腔室中建立至少5个大气压的所述压力之前升高。
5.如权利要求1所述的方法，其中在所述腔室中建立所述压力包括引入氢气和惰性气体以在所述腔室中提供气体混合物。
6.如权利要求5所述的方法，其中氢气构成所述气体混合物的至多4.5的体积百分比(vol％)。
7.如权利要求6所述的方法，其中所述氢气构成所述气体混合物的至少1％的体积百分比。
8.如权利要求5所述的方法，当氢气具有约1巴至约10巴的分压时，将所述钨膜暴露于氢气。
9.如权利要求5所述的方法，其中所述惰性气体包括氮气、氩气、或上述气体的组合。
10.如权利要求1所述的方法，其中所述钨膜是制造中的3D NAND的一部分。
11.一种在工件上形成钨的方法，包括：
使用含有钨和氟的前驱物气体通过化学气相沉积将钨膜沉积在所述工件上；和
当所述腔室中的压力是至少5个大气压时，将所述工件上的所述钨膜暴露于腔室中的氢气，以在所述钨膜上形成原子氢，其中所述钨膜包括在所述钨膜的表面上或嵌入在所述钨膜内的氟；和
由所述原子氢和所述氟形成氟化氢。
12.如权利要求11所述的方法，其中所述前驱物气体包括六氟化钨。
13.如权利要求11所述的方法，其中所述前驱物气体包括六氟化钨，且所述方法进一步包括：加热所述钨膜至约250℃至约600℃的温度。
14.如权利要求11所述的方法，包括通过引入氢气和惰性气体以在所述腔室中提供气体混合物来在所述腔室中建立压力。
15.如权利要求11所述的方法，其中所述钨膜是制造中的3D NAND的一部分。
16.如权利要求11所述的方法，其中当所述腔室中的压力是至少10个大气压至50个大气压时，将所述工件上的所述钨膜暴露于所述氢气。
17.一种退火系统，包括：
腔室主体，所述腔室主体界定腔室；
支撑件，所述支撑件用于保持工件，其中所述工件的外表面暴露于所述腔室中的环境；
机械手，所述机械手用于将所述工件插入所述腔室中；
第一气源，所述第一气源用于提供氢气；
压力源，所述压力源耦接至所述腔室以将所述腔室中的压力升高至至少5个大气压；和
控制器，所述控制器耦接至所述机械手、所述第一气源和所述压力源，所述控制器被配置成使得所述机械手将其上具有钨膜的工件运输至所述腔室中并且所述钨膜包括在所述钨膜的表面上或嵌入在所述钨膜内的氟，以使得所述气源供应所述氢气至所述腔室，使得所述压力源当所述工件保持在所述腔室中的所述支撑件上时将所述腔室中的压力升高至至少5个大气压，以通过将所述钨膜暴露于所述氢气而在所述钨膜上形成原子氢，并且由所述原子氢和所述氟形成氟化氢。
18.如权利要求17所述的退火系统，其中所述加热器包括嵌入在所述支撑件中的电阻加热器。
19.如权利要求17所述的退火系统，其中所述加热器包括位于所述腔室主体的壁中并且被定位成照射所述支撑件上的所述工件的辐射加热器。
20.如权利要求17所述的退火系统，包括第二气源以供应惰性气体至所述腔室，并且其中所述控制器耦接至所述第二气源并且被配置成使得所述第一气源引入氢气和使得所述第二气源引入惰性气体以在所述腔室中提供气体混合物。
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