CN105683336A - 用于选择性蚀刻氮化钛的组合物和方法 - Google Patents

用于选择性蚀刻氮化钛的组合物和方法 Download PDF

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Publication number
CN105683336A
CN105683336A CN201480032492.0A CN201480032492A CN105683336A CN 105683336 A CN105683336 A CN 105683336A CN 201480032492 A CN201480032492 A CN 201480032492A CN 105683336 A CN105683336 A CN 105683336A
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acid
composition
ammonium
ether
hydroxide
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Chinese (zh)
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陈丽敏
斯蒂芬·里皮
埃马纽尔·I·库珀
宋凌雁
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Entegris Inc
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Advanced Technology Materials Inc
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Priority to CN202010258552.8A priority Critical patent/CN111394100A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
CN201480032492.0A 2013-06-06 2014-06-06 用于选择性蚀刻氮化钛的组合物和方法 Pending CN105683336A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010258552.8A CN111394100A (zh) 2013-06-06 2014-06-06 用于选择性蚀刻氮化钛的组合物和方法

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US201361831928P 2013-06-06 2013-06-06
US61/831,928 2013-06-06
PCT/US2014/041322 WO2014197808A1 (en) 2013-06-06 2014-06-06 Compositions and methods for selectively etching titanium nitride

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US (1) US10920141B2 (https=)
EP (1) EP3004287B1 (https=)
JP (2) JP6723152B2 (https=)
KR (1) KR102338550B1 (https=)
CN (2) CN105683336A (https=)
SG (2) SG11201509933QA (https=)
TW (1) TWI651396B (https=)
WO (1) WO2014197808A1 (https=)

Cited By (49)

* Cited by examiner, † Cited by third party
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CN107229193A (zh) * 2017-07-25 2017-10-03 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
CN107881032A (zh) * 2016-09-30 2018-04-06 细美事有限公司 无水基板清洁组合物、基板处理方法和基板处理装置
CN108122752A (zh) * 2016-11-29 2018-06-05 三星电子株式会社 蚀刻组合物和通过使用其制造半导体器件的方法
CN108231573A (zh) * 2016-12-14 2018-06-29 三星电子株式会社 蚀刻组合物及通过使用其制造半导体器件的方法
CN108929633A (zh) * 2017-05-25 2018-12-04 富士胶片平面解决方案有限公司 用于钴应用的化学机械抛光浆料
CN109161358A (zh) * 2018-07-25 2019-01-08 佛山腾鲤新能源科技有限公司 一种导电胶的制备方法
CN109594088A (zh) * 2018-12-29 2019-04-09 陕西宝成航空仪表有限责任公司 氮化钛或氮化铝钛膜层的退除液及制备方法和退除方法
CN109791377A (zh) * 2016-09-09 2019-05-21 花王株式会社 树脂掩膜剥离用洗涤剂组合物
CN110177903A (zh) * 2017-01-17 2019-08-27 恩特格里斯公司 高阶节点工艺后端处理的蚀刻后残留物去除
CN110240907A (zh) * 2018-03-09 2019-09-17 弗萨姆材料美国有限责任公司 用于在半导体器件制造期间从硅-锗/锗叠层选择性除去硅-锗合金的蚀刻溶液
CN110272742A (zh) * 2018-03-16 2019-09-24 弗萨姆材料美国有限责任公司 用于钨字线凹进的蚀刻溶液
CN110284139A (zh) * 2018-03-19 2019-09-27 三星显示有限公司 蚀刻剂组合物和使用其制造金属图案和阵列基板的方法
CN110484919A (zh) * 2018-05-14 2019-11-22 深圳市裕展精密科技有限公司 退镀液及其退除含钛膜层的方法、及表面形成有含钛膜层的基材的退镀方法
CN110777381A (zh) * 2018-07-26 2020-02-11 弗萨姆材料美国有限责任公司 用于TiN硬掩模去除和蚀刻残留物清洁的组合物
CN111430799A (zh) * 2020-04-22 2020-07-17 上海纳米技术及应用国家工程研究中心有限公司 一种用于镍锰酸锂正极材料的高压电解液
CN111465716A (zh) * 2017-12-08 2020-07-28 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法
CN111565870A (zh) * 2018-01-26 2020-08-21 日清工程株式会社 铜微粒子
CN111850564A (zh) * 2020-07-16 2020-10-30 桂林理工大学 一种钛化物膜层退镀液及退镀方法
CN111936936A (zh) * 2018-04-04 2020-11-13 巴斯夫欧洲公司 用于去除灰化后残留物和/或用于氧化蚀刻含TiN层料或掩模的含咪唑烷硫酮组合物
CN112041970A (zh) * 2018-04-27 2020-12-04 三菱瓦斯化学株式会社 水性组合物和使用其的清洗方法
CN112080279A (zh) * 2019-06-12 2020-12-15 关东鑫林科技股份有限公司 蚀刻组合物
US10920141B2 (en) 2013-06-06 2021-02-16 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN112442372A (zh) * 2019-09-04 2021-03-05 Sk新技术株式会社 蚀刻组合物，使用其蚀刻半导体器件的绝缘膜的方法以及制备半导体器件的方法
CN112540515A (zh) * 2020-12-16 2021-03-23 江苏艾森半导体材料股份有限公司 一种光刻胶去胶液及其制备方法和应用
CN113161234A (zh) * 2021-04-27 2021-07-23 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的应用
CN113150884A (zh) * 2021-04-27 2021-07-23 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物的制备方法
CN113186043A (zh) * 2021-04-27 2021-07-30 上海新阳半导体材料股份有限公司 一种含氟清洗液组合物及其应用
CN113302730A (zh) * 2018-12-14 2021-08-24 东京毅力科创株式会社 使用照射刻蚀溶液来降低材料粗糙度的加工系统和平台
CN113430066A (zh) * 2020-03-23 2021-09-24 上海新阳半导体材料股份有限公司 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用
CN113574159A (zh) * 2019-03-14 2021-10-29 日产化学株式会社 清洗剂组合物以及清洗方法
CN113667552A (zh) * 2020-05-15 2021-11-19 安集微电子科技（上海）股份有限公司 一种用于铜大马士革工艺的清洗液
TWI748369B (zh) * 2019-03-11 2021-12-01 美商慧盛材料美國責任有限公司 用於鋁氮化物的蝕刻溶液及方法
CN114144508A (zh) * 2019-06-03 2022-03-04 富士胶片电子材料美国有限公司 蚀刻组合物
CN114369462A (zh) * 2021-12-16 2022-04-19 湖北兴福电子材料有限公司 一种选择性蚀刻氮化钛及钨的蚀刻液
CN114989825A (zh) * 2022-06-30 2022-09-02 湖北兴福电子材料有限公司 一种掺钪氮化铝和钨的选择性蚀刻液
CN115011347A (zh) * 2022-06-30 2022-09-06 湖北兴福电子材料有限公司 一种氮化铝和钨的选择性蚀刻液
CN115044376A (zh) * 2022-06-30 2022-09-13 湖北兴福电子材料有限公司 一种掺钪氮化铝蚀刻液及其应用
CN115210339A (zh) * 2020-03-04 2022-10-18 弗萨姆材料美国有限责任公司 用于氮化钛和钼导电金属线的蚀刻溶液
CN115763494A (zh) * 2022-11-16 2023-03-07 Tcl华星光电技术有限公司 显示面板及其制作方法、蚀刻液组合物
CN116057208A (zh) * 2020-08-07 2023-05-02 株式会社德山 半导体晶片用处理液
CN116096837A (zh) * 2020-08-13 2023-05-09 恩特格里斯公司 氮化物蚀刻剂组合物和方法
CN116235282A (zh) * 2020-09-29 2023-06-06 三菱瓦斯化学株式会社 半导体基板清洗用组合物和清洗方法
CN116948647A (zh) * 2023-06-29 2023-10-27 浙江奥首材料科技有限公司 一种氮化物半导体蚀刻液、其制备方法与用途
CN117425717A (zh) * 2021-05-12 2024-01-19 恩特格里斯公司 选择性蚀刻剂组合物及方法
CN118185711A (zh) * 2024-02-28 2024-06-14 湖北兴福电子材料股份有限公司 一种铜钴钨兼容性好的TiN去除组合物
US12112959B2 (en) 2018-09-04 2024-10-08 Tokyo Electron Limited Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
CN118931541A (zh) * 2024-06-26 2024-11-12 湖北兴福电子材料股份有限公司 一种避免金属间电化学腐蚀效应的钨/氮化钛蚀刻液
CN119331621A (zh) * 2024-08-30 2025-01-21 湖北兴福电子材料股份有限公司 易于清洗的高选择性TiN清洗液
CN119614203A (zh) * 2024-11-25 2025-03-14 湖北兴福电子材料股份有限公司 一种选择性蚀刻氮化硅及氧化硅和氮化钛的蚀刻液

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US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
EP3104398B1 (en) * 2013-12-06 2020-03-11 Fujifilm Electronic Materials USA, Inc. Cleaning formulation and method for removing residues on surfaces
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