BRPI0418529A - composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos - Google Patents

composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos

Info

Publication number
BRPI0418529A
BRPI0418529A BRPI0418529-3A BRPI0418529A BRPI0418529A BR PI0418529 A BRPI0418529 A BR PI0418529A BR PI0418529 A BRPI0418529 A BR PI0418529A BR PI0418529 A BRPI0418529 A BR PI0418529A
Authority
BR
Brazil
Prior art keywords
cleaning compositions
microelectronic
derivatives
salts
halogen acids
Prior art date
Application number
BRPI0418529-3A
Other languages
English (en)
Inventor
Chien-Pin Shermann Hsu
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of BRPI0418529A publication Critical patent/BRPI0418529A/pt

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Abstract

OMPOSIçõES DE LIMPEZA PARA MICROELETRÈNICOS CONTENDO áCIDOS DE HALOGêNIO OXIGENADOS, SAIS E DERIVADOS DOS MESMOS. A presente invenção refere-se a composições de limpeza de microeletrónicos para a limpeza de sbstratos microeletrónicos e especificamente compostos de limpeza úteis com, e tendo uma compatibilidade aumentada com substratos microeletrónicos caraterizados por dióxido de silício,dielétricos sensiveis de baixo-k e de alto-k e metalizações de cobre, tungstênio, tântalo, níquel, ouro, cobalto, paládio, platina, cromo, rutênio, rádio, háfnio, titânio, molibdênio, estanho e outras metalizações,bem como metelizações de substratos de AI ou AI(cu) e tecnologias interconectadas avançadas, são prividas por composições de limpeza de microeletrónicos compreendendo ácidos de halogênio, sais e derivados dos mesmos.
BRPI0418529-3A 2004-02-11 2004-11-05 composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos BRPI0418529A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54380104P 2004-02-11 2004-02-11
PCT/US2004/037135 WO2005083523A1 (en) 2004-02-11 2004-11-05 Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

Publications (1)

Publication Number Publication Date
BRPI0418529A true BRPI0418529A (pt) 2007-05-15

Family

ID=34700209

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0418529-3A BRPI0418529A (pt) 2004-02-11 2004-11-05 composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos

Country Status (19)

Country Link
US (1) US7521406B2 (pt)
EP (1) EP1564595B1 (pt)
JP (3) JP4208826B2 (pt)
KR (2) KR101316993B1 (pt)
CN (3) CN101833251B (pt)
AT (1) ATE449362T1 (pt)
BR (1) BRPI0418529A (pt)
CA (1) CA2555665C (pt)
DE (1) DE602005017684D1 (pt)
DK (1) DK1564595T3 (pt)
ES (1) ES2334359T3 (pt)
IL (1) IL177305A (pt)
NO (1) NO20064056L (pt)
PL (1) PL1564595T3 (pt)
PT (1) PT1564595E (pt)
SG (1) SG150508A1 (pt)
TW (1) TWI318238B (pt)
WO (1) WO2005083523A1 (pt)
ZA (1) ZA200606544B (pt)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2293340T3 (es) * 2003-08-19 2008-03-16 Mallinckrodt Baker, Inc. Composiciones decapantes y de limpieza para microelectronica.
KR101117939B1 (ko) * 2003-10-28 2012-02-29 사켐,인코포레이티드 세척액 및 에칭제 및 이의 사용 방법
SG150508A1 (en) 2004-02-11 2009-03-30 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7867779B2 (en) 2005-02-03 2011-01-11 Air Products And Chemicals, Inc. System and method comprising same for measurement and/or analysis of particles in gas stream
JP2008536312A (ja) * 2005-04-08 2008-09-04 サッチェム， インコーポレイテッド 金属窒化物の選択的なウェットエッチング
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
US7977228B2 (en) * 2006-06-29 2011-07-12 Intel Corporation Methods for the formation of interconnects separated by air gaps
WO2008039730A1 (en) * 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
WO2008090418A1 (en) * 2007-01-22 2008-07-31 Freescale Semiconductor, Inc. Liquid cleaning composition and method for cleaning semiconductor devices
US20090241988A1 (en) * 2008-03-31 2009-10-01 Intel Corporation Photoresist and antireflective layer removal solution and method thereof
US8026200B2 (en) * 2008-05-01 2011-09-27 Advanced Technology Materials, Inc. Low pH mixtures for the removal of high density implanted resist
JP5622752B2 (ja) 2009-02-25 2014-11-12 アバントールパフォーマンス マテリアルズ， インコーポレイテッドＪ Ｔ Ｂａｋｅｒ Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体デバイスウェハーからイオン注入フォトレジストを洗浄するためのストリッピング組成物
CN102334069B (zh) * 2009-02-25 2013-07-10 安万托特性材料股份有限公司 基于多用途酸性有机溶剂的微电子清洗组合物
CN102460662B (zh) * 2009-06-25 2014-09-10 朗姆研究公司 用于处理半导体晶片的方法
SG176562A1 (en) * 2009-06-25 2012-01-30 Lam Res Ag Method for treating a semiconductor wafer
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
JP2011179085A (ja) * 2010-03-02 2011-09-15 C Uyemura & Co Ltd 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
US9831088B2 (en) 2010-10-06 2017-11-28 Entegris, Inc. Composition and process for selectively etching metal nitrides
CN102199499B (zh) * 2011-04-02 2013-01-16 浙江向日葵光能科技股份有限公司 太阳能电池硅片清洗剂及其使用方法
ES2541222T3 (es) * 2011-08-09 2015-07-16 Basf Se Composiciones alcalinas acuosas y procedimiento de tratamiento de la superficie de sustratos de silicio
US9257270B2 (en) * 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
US9678430B2 (en) * 2012-05-18 2017-06-13 Entegris, Inc. Composition and process for stripping photoresist from a surface including titanium nitride
JP6157081B2 (ja) * 2012-09-24 2017-07-05 東京応化工業株式会社 フォトリソグラフィ用剥離液、及びパターン形成方法
JP6029419B2 (ja) * 2012-11-02 2016-11-24 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
CN103809394B (zh) * 2012-11-12 2019-12-31 安集微电子科技（上海）股份有限公司 一种去除光阻蚀刻残留物的清洗液
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
CN103275823A (zh) * 2013-05-29 2013-09-04 苏州康和顺医疗技术有限公司 一种用于全自动生化分析仪的清洗剂及其制备方法
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
EP3039098B1 (en) * 2013-08-30 2020-09-30 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
US9957469B2 (en) 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
KR102405631B1 (ko) * 2014-11-13 2022-06-07 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 탄탈을 포함하는 재료의 데미지를 억제한 반도체소자의 세정액, 및 이를 이용한 세정방법
JP6217659B2 (ja) * 2015-01-28 2017-10-25 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
SG11201808059UA (en) 2016-03-24 2018-10-30 Avantor Performance Materials Llc Non-aqueous tungsten compatible metal nitride selective etchants and cleaners
CN107357143B (zh) 2017-07-25 2018-06-19 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
US11353794B2 (en) * 2017-12-22 2022-06-07 Versum Materials Us, Llc Photoresist stripper
CN109980174A (zh) * 2017-12-27 2019-07-05 中国电子科技集团公司第十八研究所 提高电池热熔性聚合物铜箔表面附着力方法及表面处理剂
US11390829B2 (en) 2018-01-16 2022-07-19 Tokuyama Corporation Treatment liquid for semiconductor wafers, which contains hypochlorite ions
WO2019222768A2 (en) * 2018-04-12 2019-11-21 Briotech, Inc. Aqueous hypohalous acid preparations for the inactivation of resistant infectious agents
CN117567296A (zh) * 2018-05-23 2024-02-20 株式会社德山 次氯酸季烷基铵溶液的制造方法以及半导体晶圆的处理方法
JP6901998B2 (ja) * 2018-06-15 2021-07-14 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物
KR20210039450A (ko) * 2018-09-06 2021-04-09 후지필름 가부시키가이샤 약액, 기판의 처리 방법
JP7219061B2 (ja) 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
TW202037706A (zh) * 2019-02-13 2020-10-16 日商德山股份有限公司 含有次氯酸根離子及ｐＨ緩衝劑的半導體晶圓之處理液
KR20210063248A (ko) * 2019-11-22 2021-06-01 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
TW202200843A (zh) * 2020-02-25 2022-01-01 日商德山股份有限公司 釕之半導體用處理液
JPWO2021201094A1 (pt) * 2020-03-31 2021-10-07
KR20230004437A (ko) 2020-04-17 2023-01-06 가부시끼가이샤 도꾸야마 할로겐산소산 용액의 제조 방법
KR20220000375A (ko) 2020-06-25 2022-01-03 가부시끼가이샤 도꾸야마 할로겐 산소산 용액의 제조 방법 및 제조 장치
JPWO2022030628A1 (pt) * 2020-08-07 2022-02-10
JPWO2022114036A1 (pt) * 2020-11-26 2022-06-02
WO2022159183A1 (en) * 2021-01-19 2022-07-28 Lam Research Corporation Method of cleaning chamber components with metal etch residues
CN115916741A (zh) * 2021-06-07 2023-04-04 株式会社德山 卤素含氧酸的制造方法及其制造装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2256958A (en) 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
GB1080767A (en) * 1965-05-25 1967-08-23 Ici Ltd Tarnish inhibiting compositions
US3962108A (en) * 1975-11-03 1976-06-08 Kti Chemical, Inc. Chemical stripping solution
DE3308850C2 (de) * 1983-03-12 1985-03-07 B. Braun Melsungen Ag, 3508 Melsungen Bleich-, Reinigungs- und Desinfektionsmittel auf Hypohalitbasis mit verbesserter Lagerstabilität
US4642221A (en) * 1983-07-05 1987-02-10 Atlantic Richfield Company Method and composition for inhibiting corrosion in aqueous heat transfer systems
US5364961A (en) 1992-06-15 1994-11-15 Monsanto Company Process for making optically active α-amino ketones
US5380458A (en) 1992-10-02 1995-01-10 Colgate-Palmolive Co. Stabilized hypohalite compositions
US5773627A (en) * 1995-03-21 1998-06-30 Betzdearborn Inc. Methods of inhibiting corrosion using halo-benzotriazoles
JP2677235B2 (ja) 1995-03-30 1997-11-17 日本電気株式会社 半導体基板の洗浄装置及び洗浄方法並びに洗浄液の生成方法
JPH0959276A (ja) * 1995-08-11 1997-03-04 Kumiai Chem Ind Co Ltd 縮合ヘテロ環誘導体及び除草剤
JPH09279189A (ja) 1996-04-08 1997-10-28 Nippon Steel Corp 半導体基板用洗浄液
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
AU6867498A (en) * 1997-03-21 1998-10-20 Scripps Research Institute, The Synthesis of alpha,beta-substituted amino amides, esters and acids
US5968280A (en) 1997-11-12 1999-10-19 International Business Machines Corporation Method for cleaning a surface
US5889161A (en) * 1998-05-13 1999-03-30 Sri International N,N'-azobis-nitroazoles and analogs thereof as igniter compounds for use in energetic compositions
JP2000056478A (ja) 1998-08-04 2000-02-25 Showa Denko Kk サイドウォール除去液
KR100473442B1 (ko) * 1998-10-23 2005-03-08 아치 스페셜티 케미칼즈, 인코포레이티드 금속층의 화학적 기계적 연마를 위한 활성제, 활성제 용액, 슬러리 시스템 및 연마방법
JP4224652B2 (ja) 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
JP3832399B2 (ja) * 2001-08-28 2006-10-11 栗田工業株式会社 殺菌殺藻剤組成物及び水系の殺菌殺藻方法
JP2003119494A (ja) 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
KR20030082767A (ko) * 2002-04-18 2003-10-23 주식회사 덕성 수용액에서의 전해질의 전기전도도가 높은 물질을 이용한레지스트 박리액 조성물
JP4267359B2 (ja) 2002-04-26 2009-05-27 花王株式会社 レジスト用剥離剤組成物
CN102061228B (zh) * 2002-06-07 2013-02-13 安万托特性材料股份有限公司 包含氧化剂和有机溶剂的微电子清洁组合物
BR0311830A (pt) 2002-06-07 2005-03-29 Mallinckrodt Baker Inc Composições removedoras de arco e de limpeza de microeletrÈnicos
SG150508A1 (en) 2004-02-11 2009-03-30 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

Also Published As

Publication number Publication date
PL1564595T3 (pl) 2010-06-30
CN101923294A (zh) 2010-12-22
JP4393553B2 (ja) 2010-01-06
EP1564595A2 (en) 2005-08-17
ATE449362T1 (de) 2009-12-15
KR101316993B1 (ko) 2013-10-11
ES2334359T3 (es) 2010-03-09
ZA200606544B (en) 2009-07-29
CN101923294B (zh) 2013-12-04
CA2555665A1 (en) 2005-09-09
EP1564595B1 (en) 2009-11-18
DK1564595T3 (da) 2010-01-18
EP1564595A3 (en) 2007-06-27
JP4208826B2 (ja) 2009-01-14
CA2555665C (en) 2012-10-02
CN101833251B (zh) 2013-11-13
DE602005017684D1 (de) 2009-12-31
CN1954267B (zh) 2010-12-08
JP2008156654A (ja) 2008-07-10
US7521406B2 (en) 2009-04-21
JP2008124494A (ja) 2008-05-29
CN1954267A (zh) 2007-04-25
US20050176603A1 (en) 2005-08-11
SG150508A1 (en) 2009-03-30
TW200526774A (en) 2005-08-16
NO20064056L (no) 2006-11-07
CN101833251A (zh) 2010-09-15
JP2005227749A (ja) 2005-08-25
IL177305A (en) 2011-06-30
PT1564595E (pt) 2009-12-23
KR20130086326A (ko) 2013-08-01
IL177305A0 (en) 2006-12-10
TWI318238B (en) 2009-12-11
KR20050081155A (ko) 2005-08-18
WO2005083523A1 (en) 2005-09-09

Similar Documents

Publication Publication Date Title
BRPI0418529A (pt) composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
DE602005024772D1 (de) Nanoelektronik- und mikroelektronik-reinigungsmittel
WO2006044293A3 (en) Bicyclic compounds as selective melanin concentrating hormone receptor antagonists for the treatment of obesity and related disorders
BRPI0413595B8 (pt) sal de malonato, composição farmacêutica, uso de um sal de malonato, e, método de fabricação de um composto
JP2008500452A5 (pt)
DE60236605D1 (de) Zusammensetzungen und deren verwendung zur behandlung von krebs
EP1756325A4 (en) PALLADIUM ALLOY
JO2747B1 (en) Vehicles
ATE542795T1 (de) Benzylpiperazinderivate als motilin- rezeptorantagonisten
EP1840659A3 (en) Composition for cleaning microelectronic substrates containing halogen oxygen acids and derivatives thereof
MY141998A (en) Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
DE602007004327D1 (de) Einen azepin-kern enthaltende antagonisten des histaminrezeptors
DE602005009487D1 (de) Neutrale endopeptidase (nep) und humane lösliche endopeptidase (hsep) hemmer für die prophylaxe und behandlung von neurodegenerativen erkrankungen
NO20040416L (no) Platina-holdig keramisk blanding med antitrombotiske egenskaper og produkter som inneholder samme
HK1130850A1 (en) Platinum alloy for jewelry
WO2007034254A8 (en) Amino-alkyl-amide derivatives as ccr3 receptor ligands
DE602005012826D1 (de) Neue mao-b-hemmer
IL156639A0 (en) Phenethanolamine derivatives, methods for their preparation and pharmaceutical compositions containing them
RU2006128396A (ru) Сплав
RU2006130033A (ru) Сплав на основе никеля
WO2006061140A3 (en) Composition of ssao substrates and metal compounds of the vla and vlb groups of the periodic table
TH80299B (th) การใช้ ppar แอกโกนิสท์สำหรับการรักษาภาวะหัวใจล้มเหลวเหตุการคั่ง
TH97941A (th) อนุพันธ์ 2-ซับสทิทิวเทด 4-เบนซิลฟธาแลซิโนน ที่เป็นฮิสทามีน h1 และ h3 แอนทาโกนิสท์
TH96065A (th) อนุพันธ์คูมารินตัวใหม่ที่มีฤทธิ์ต่อต้านเนื้องอก
TH103187A (th) สารประกอบไพร์โรลิดีน

Legal Events

Date Code Title Description
B25G Requested change of headquarter approved

Owner name: MALLINCKRODT BAKER, INC. (US)

Free format text: SEDE ALTERADA CONFORME SOLICITADO NA PETICAO NO 020080021179/RJ DE 13/02/2008.

B25D Requested change of name of applicant approved

Owner name: AVANTOR PERFORMANCE MATERIALS, INC. (US)

Free format text: NOME ALTERADO DE: MALLINCKRODT BAKER, INC.

B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 9A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2260 DE 29/04/2014.