WO2002048428A1 - Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor - Google Patents

Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor Download PDF

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Publication number
WO2002048428A1
WO2002048428A1 PCT/JP2001/010666 JP0110666W WO0248428A1 WO 2002048428 A1 WO2002048428 A1 WO 2002048428A1 JP 0110666 W JP0110666 W JP 0110666W WO 0248428 A1 WO0248428 A1 WO 0248428A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
article
plasma discharge
coated electrode
film
Prior art date
Application number
PCT/JP2001/010666
Other languages
English (en)
French (fr)
Inventor
Kazuhiro Fukuda
Yoshikazu Kondo
Takashi Murakami
Shunichi Iwamaru
Yumi Muramatsu
Toshio Tsuji
Original Assignee
Konica Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Corporation filed Critical Konica Corporation
Priority to US10/181,827 priority Critical patent/US6835425B2/en
Priority to JP2002550139A priority patent/JP4254236B2/ja
Priority to EP01270639A priority patent/EP1342810A4/en
Publication of WO2002048428A1 publication Critical patent/WO2002048428A1/ja
Priority to US10/302,359 priority patent/US7044078B2/en
Priority to US11/073,248 priority patent/US7421974B2/en
Priority to US11/089,809 priority patent/US7462379B2/en
Priority to US12/156,337 priority patent/US20080268172A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093—Coaxial electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/16—Optical coatings produced by application to, or surface treatment of, optical elements having an anti-static effect, e.g. electrically conducting coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/18—Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
PCT/JP2001/010666 2000-12-12 2001-12-06 Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor WO2002048428A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US10/181,827 US6835425B2 (en) 2000-12-12 2001-12-06 Layer-forming method using plasma state reactive gas
JP2002550139A JP4254236B2 (ja) 2000-12-12 2001-12-06 薄膜形成方法
EP01270639A EP1342810A4 (en) 2000-12-12 2001-12-06 METHOD FOR THE PRODUCTION OF A THIN FILM, THIN FILM ARTICLES, OPTICAL FILM, DIELECTRICALLY COATED ELECTRODE AND PLASMA DISCHARGE DEVICE
US10/302,359 US7044078B2 (en) 2000-12-12 2002-11-22 Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus
US11/073,248 US7421974B2 (en) 2000-12-12 2005-03-04 Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus
US11/089,809 US7462379B2 (en) 2000-12-12 2005-03-25 Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus
US12/156,337 US20080268172A1 (en) 2000-12-12 2008-05-30 Layer forming method using plasma discharge

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-377044 2000-12-12
JP2000377044 2000-12-12
JP2001175475 2001-06-11
JP2001-175475 2001-06-11

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US10181827 A-371-Of-International 2001-12-06
US10/181,827 A-371-Of-International US6835425B2 (en) 2000-12-12 2001-12-06 Layer-forming method using plasma state reactive gas
US10/302,359 Division US7044078B2 (en) 2000-12-12 2002-11-22 Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus

Publications (1)

Publication Number Publication Date
WO2002048428A1 true WO2002048428A1 (en) 2002-06-20

Family

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PCT/JP2001/010666 WO2002048428A1 (en) 2000-12-12 2001-12-06 Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor

Country Status (7)

Country Link
US (5) US6835425B2 (ja)
EP (5) EP2233607A1 (ja)
JP (2) JP4254236B2 (ja)
KR (2) KR100846550B1 (ja)
CN (2) CN101333654B (ja)
TW (1) TWI225897B (ja)
WO (1) WO2002048428A1 (ja)

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EP1286184A2 (en) * 2001-08-07 2003-02-26 Konica Corporation Half mirror film producing method and optical element comprising a half mirror film
JP2004013692A (ja) * 2002-06-10 2004-01-15 Konica Minolta Holdings Inc タッチパネル用透明導電性基材
JP2004010911A (ja) * 2002-06-03 2004-01-15 Konica Minolta Holdings Inc 透明導電膜の形成方法及びた透明導電膜を有する物品
WO2004013376A2 (en) * 2002-07-30 2004-02-12 Saint-Gobain Glass France Titania coatings by plasma cvd at atmospheric pressure
JP2004063195A (ja) * 2002-07-26 2004-02-26 Konica Minolta Holdings Inc 透明導電性薄膜を有する物品及びその製造方法、並びに薄膜形成装置
JP2004066224A (ja) * 2002-06-11 2004-03-04 Konica Minolta Holdings Inc 誘電体被覆電極、プラズマ放電処理装置及び薄膜形成方法
JP2004084027A (ja) * 2002-08-28 2004-03-18 Konica Minolta Holdings Inc 機能体及びその形成方法
JP2004103400A (ja) * 2002-09-10 2004-04-02 Konica Minolta Holdings Inc 透明導電膜及びその形成方法
JP2004285388A (ja) * 2003-03-20 2004-10-14 Konica Minolta Holdings Inc 薄膜形成装置
WO2005035824A1 (ja) * 2003-10-07 2005-04-21 Konica Minolta Holdings, Inc. アモルファス窒化硼素薄膜及びその製造方法、並びに積層膜、透明プラスチックフィルム、及び有機ｅｌ素子
EP1540714A2 (en) * 2002-08-26 2005-06-15 Sigma Laboratories of Arizona, Incorporated Barrier coatings produced by atmospheric glow discharge
KR100506588B1 (ko) * 2002-08-26 2005-08-09 (주) 플라즈닉스 플라즈마를 이용하여 피처리물을 처리하는 장치
WO2006129461A1 (ja) * 2005-06-01 2006-12-07 Konica Minolta Holdings, Inc. 薄膜形成方法及び透明導電膜
WO2007077871A1 (ja) 2006-01-06 2007-07-12 Konica Minolta Holdings, Inc. 防湿性セルロースエステルフィルム、偏光板保護フィルム及び偏光板
WO2008096617A1 (ja) 2007-02-06 2008-08-14 Konica Minolta Holdings, Inc. 透明ガスバリア性フィルム及び透明ガスバリア性フィルムの製造方法
WO2008096616A1 (ja) 2007-02-05 2008-08-14 Konica Minolta Holdings, Inc. 透明ガスバリア性フィルム及びその製造方法
JP2009231233A (ja) * 2008-03-25 2009-10-08 Kobe Steel Ltd ＲＥ−Ｂａ−Ｃｕ−Ｏ系超電導テープ線材の製造方法及びそれに用いるプラズマ処理装置
US7632550B2 (en) * 2002-02-15 2009-12-15 Konica Corporation Film forming method employing reactive and reducing gases and substrate formed by the method
WO2010082581A1 (ja) * 2009-01-17 2010-07-22 コニカミノルタホールディングス株式会社 遮熱性物品、遮熱性物品の製造方法、及び建築部材
EP2278047A1 (en) 2005-08-31 2011-01-26 Konica Minolta Holdings, Inc. Plasma discharge treatment apparatus, and method of manufacturing gas barrier film
CN102041466A (zh) * 2010-07-30 2011-05-04 中国科学院金属研究所 一种高性能高温固体自润滑涂层及其制备方法
WO2013011872A1 (ja) 2011-07-15 2013-01-24 コニカミノルタホールディングス株式会社 ガスバリア性フィルム及びその製造方法
WO2020066533A1 (ja) 2018-09-28 2020-04-02 ダイキン工業株式会社 表面処理方法及び表面処理物品

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WO2002048428A1 (en) * 2000-12-12 2002-06-20 Konica Corporation Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor
JP2002322558A (ja) * 2001-04-25 2002-11-08 Konica Corp 薄膜形成方法、光学フィルム、偏光板及び画像表示装置
US20030207093A1 (en) * 2001-12-03 2003-11-06 Toshio Tsuji Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
US7465407B2 (en) * 2002-08-28 2008-12-16 Panasonic Corporation Plasma processing method and apparatus
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US7780786B2 (en) 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
US7323530B2 (en) * 2003-01-27 2008-01-29 Konica Minolta Holdings, Inc. Transparent resin film, its manufacturing method, electronic display, liquid crystal display, organic EL display, and touch panel
JP4784308B2 (ja) * 2003-05-29 2011-10-05 コニカミノルタホールディングス株式会社 ディスプレイ基板用透明フィルム、該フィルムを用いたディスプレイ基板およびその製造方法、液晶ディスプレイ、有機エレクトロルミネッセンスディスプレイ、およびタッチパネル
CN1780935B (zh) * 2003-07-16 2010-05-05 柯尼卡美能达控股株式会社 薄膜制造方法以及具有由此薄膜制造方法形成的薄膜的基材
AT500259B1 (de) * 2003-09-09 2007-08-15 Austria Tech & System Tech Dünnschichtanordnung und verfahren zum herstellen einer solchen dünnschichtanordnung
US7226894B2 (en) 2003-10-22 2007-06-05 General Electric Company Superconducting wire, method of manufacture thereof and the articles derived therefrom
US7578891B2 (en) * 2004-05-18 2009-08-25 Hitachi Chemical Company, Ltd. Adhesive bonding sheet, semiconductor device using the same, and method for manufacturing such semiconductor device
KR100617270B1 (ko) * 2004-08-09 2006-08-31 키스타 주식회사 인체 친화적인 금속의 착색용 다층박막 및 금속의 착색방법
CN100562602C (zh) * 2005-02-16 2009-11-25 株式会社爱发科 卷取式真空成膜装置
WO2006118168A1 (ja) * 2005-04-28 2006-11-09 Konica Minolta Opto, Inc. 光学フィルム、偏光板及び液晶表示装置
WO2006132382A2 (en) * 2005-06-07 2006-12-14 Fujifilm Corporation Method of manufacturing a film
DE102005029360B4 (de) * 2005-06-24 2011-11-10 Softal Corona & Plasma Gmbh Zwei Verfahren zur kontinuierlichen Atmosphärendruck Plasmabehandlung von Werkstücken, insbesondere Materialplatten oder -bahnen
JP4766936B2 (ja) * 2005-07-06 2011-09-07 富士フイルム株式会社 光学フィルムおよびその製造方法、光学補償フィルム、偏光板、並びに液晶表示装置
KR101187744B1 (ko) 2005-07-12 2012-10-05 삼성디스플레이 주식회사 액정 표시 장치, 그의 제조 방법 및 제조 장치
SG183720A1 (en) * 2005-08-12 2012-09-27 Cambrios Technologies Corp Nanowires-based transparent conductors
JP5367369B2 (ja) * 2005-08-26 2013-12-11 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 放電プラズマを発生させ制御するための方法、装置および該装置の使用方法
US7666766B2 (en) * 2005-09-27 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device
JP4996868B2 (ja) * 2006-03-20 2012-08-08 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US20090095344A1 (en) * 2006-04-25 2009-04-16 Tomohiro Machida Conductive Paste for Solar Cell Electrode
US8323753B2 (en) * 2006-05-30 2012-12-04 Fujifilm Manufacturing Europe B.V. Method for deposition using pulsed atmospheric pressure glow discharge
WO2007145513A1 (en) * 2006-06-16 2007-12-21 Fujifilm Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
WO2008007520A1 (fr) * 2006-07-14 2008-01-17 Konica Minolta Holdings, Inc. Dispositif d'affichage à cristaux liquides et procédé de fabrication
JP4829036B2 (ja) * 2006-08-11 2011-11-30 株式会社小糸製作所 透光性積層体
ITMO20060322A1 (it) * 2006-10-12 2008-04-13 Maria Prudenziati Tecnica innovativa per il miglioramento delle caratteristiche dielettriche e di anticorrosione di ricoprimenti ottenuti con tecnologie thermal spray, aps, hvof e analoghe, in particolare di riporti isolanti quali ad es. a1203.
US8018568B2 (en) 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
SG10201502808UA (en) * 2006-10-12 2015-05-28 Cambrios Technologies Corp Nanowire-Based Transparent Conductors And Applications Thereof
JP5506401B2 (ja) 2007-02-13 2014-05-28 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 磁気マスクデバイスを使用する基板プラズマ処理
JP6098860B2 (ja) 2007-04-20 2017-03-22 シーエーエム ホールディング コーポレーション 複合透明導電体、及び機器
US8097712B2 (en) 2007-11-07 2012-01-17 Beelogics Inc. Compositions for conferring tolerance to viral disease in social insects, and the use thereof
WO2009096785A1 (en) * 2008-02-01 2009-08-06 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
ATE523067T1 (de) * 2008-02-08 2011-09-15 Fujifilm Mfg Europe Bv Verfahren zur herstellung einer mehrschichtigen stapelstruktur mit verbesserter wvtr- grenzeigenschaft
US8361276B2 (en) * 2008-02-11 2013-01-29 Apjet, Inc. Large area, atmospheric pressure plasma for downstream processing
US20110014424A1 (en) * 2008-02-21 2011-01-20 Fujifilm Manufacturing Europe B.V. Plasma treatment apparatus and method for treatment of a substrate with atmospheric pressure glow discharge electrode configuration
JP4558810B2 (ja) * 2008-02-29 2010-10-06 富士フイルム株式会社 成膜装置
US9028656B2 (en) 2008-05-30 2015-05-12 Colorado State University Research Foundation Liquid-gas interface plasma device
EP2299922B1 (en) 2008-05-30 2016-11-09 Colorado State University Research Foundation Apparatus for generating plasma
WO2009146432A1 (en) 2008-05-30 2009-12-03 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
EP2145978A1 (fr) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour le dépôt de couches sur un substrat
WO2010024193A1 (ja) * 2008-08-25 2010-03-04 コニカミノルタホールディングス株式会社 耐候性物品、耐候性フィルム及び光学部材
EP2180768A1 (en) * 2008-10-23 2010-04-28 TNO Nederlandse Organisatie voor Toegepast Wetenschappelijk Onderzoek Apparatus and method for treating an object
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8627783B2 (en) * 2008-12-19 2014-01-14 Lam Research Corporation Combined wafer area pressure control and plasma confinement assembly
DE102009030303A1 (de) 2009-06-24 2010-12-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Antireflexschicht-bildenden Beschichtungen sowie Antireflexbeschichtungen
JP2011028887A (ja) * 2009-07-22 2011-02-10 Hitachi Displays Ltd 有機ｅｌ表示装置
DE102009038974B3 (de) * 2009-08-21 2010-11-25 Salzgitter Flachstahl Gmbh Verfahren zum Erzeugen von Warmband mittels Bandgießen mit über den Bandquerschnitt einstellbaren Werkstoffeigenschaften
US8962584B2 (en) 2009-10-14 2015-02-24 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Compositions for controlling Varroa mites in bees
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
CN102725433B (zh) * 2010-01-21 2014-07-02 Oc欧瑞康巴尔斯公司 用以沉积防反射层于基材上的方法
CN102834472B (zh) * 2010-02-05 2015-04-22 凯博瑞奥斯技术公司 光敏墨组合物和透明导体以及它们的使用方法
MX2012010479A (es) 2010-03-08 2012-10-09 Monsanto Technology Llc Moleculas polinucleotidicas para regulacion genetica en plantas.
CA2793855A1 (en) * 2010-03-22 2011-09-29 Luxottica Us Holdings Corporation Ion beam assisted deposition of ophthalmic lens coatings
EP2554028B1 (en) 2010-03-31 2016-11-23 Colorado State University Research Foundation Liquid-gas interface plasma device
RU2471884C2 (ru) * 2011-04-15 2013-01-10 Вадим Дмитриевич Гончаров Способ обработки поверхности материалов и устройство для его осуществления
CN102418089B (zh) * 2011-08-25 2013-10-09 东华大学 一种三维TiO2晶体膜的制备方法
EP3296402B1 (en) 2011-09-13 2020-04-15 Monsanto Technology LLC Methods and compositions for weed control
US10760086B2 (en) 2011-09-13 2020-09-01 Monsanto Technology Llc Methods and compositions for weed control
EP2755466A4 (en) 2011-09-13 2015-04-15 Monsanto Technology Llc METHODS AND COMPOSITIONS FOR CONTROLLING WEEDS
EP2755988B1 (en) 2011-09-13 2018-08-22 Monsanto Technology LLC Methods and compositions for weed control
US10806146B2 (en) 2011-09-13 2020-10-20 Monsanto Technology Llc Methods and compositions for weed control
US10829828B2 (en) 2011-09-13 2020-11-10 Monsanto Technology Llc Methods and compositions for weed control
CA2848680C (en) 2011-09-13 2020-05-19 Monsanto Technology Llc Methods and compositions for weed control
CN104271795B (zh) * 2012-03-27 2016-08-24 佳能奥普特龙株式会社 用于形成薄膜的蒸镀材料
US10240161B2 (en) 2012-05-24 2019-03-26 A.B. Seeds Ltd. Compositions and methods for silencing gene expression
JP2013254153A (ja) * 2012-06-08 2013-12-19 Nitto Denko Corp 光学フィルムの活性化処理方法および製造方法、光学フィルムならびに画像表示装置
KR101881956B1 (ko) * 2012-07-11 2018-07-26 주식회사 원익아이피에스 기상 증착장치 및 플라즈마 소스
US10683505B2 (en) 2013-01-01 2020-06-16 Monsanto Technology Llc Methods of introducing dsRNA to plant seeds for modulating gene expression
MX2015008611A (es) 2013-01-01 2016-02-03 Seeds Ltd Ab Metodos para introducir dsrna en semillas de plantas para modular la expresion genetica.
US9263359B2 (en) * 2013-02-27 2016-02-16 Lotus Applied Technology, Llc Mixed metal-silicon-oxide barriers
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
EP2967082A4 (en) 2013-03-13 2016-11-02 Monsanto Technology Llc METHOD AND COMPOSITIONS FOR WEED CONTROL
BR112015023051A2 (pt) 2013-03-13 2017-11-14 Monsanto Technology Llc método para controle de ervas daninhas, composição herbicida, cassete de expressão microbiano e método de produção de polinucleotídeo
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US10568328B2 (en) 2013-03-15 2020-02-25 Monsanto Technology Llc Methods and compositions for weed control
US9850496B2 (en) 2013-07-19 2017-12-26 Monsanto Technology Llc Compositions and methods for controlling Leptinotarsa
JP6668236B2 (ja) 2013-07-19 2020-03-18 モンサント テクノロジー エルエルシー Ｌｅｐｔｉｎｏｔａｒｓａ防除用組成物及びその方法
US9576810B2 (en) 2013-10-03 2017-02-21 Applied Materials, Inc. Process for etching metal using a combination of plasma and solid state sources
EP2866318A1 (en) * 2013-10-24 2015-04-29 OCE-Technologies B.V. Electrode for dielectric barrier discharge treatment of a substrate
MX2016005778A (es) 2013-11-04 2016-12-20 Monsanto Technology Llc Composiciones y metodos para controlar infestaciones de plagas y parasitos de los artropodos.
UA119253C2 (uk) 2013-12-10 2019-05-27 Біолоджикс, Інк. Спосіб боротьби із вірусом у кліща varroa та у бджіл
AR099092A1 (es) 2014-01-15 2016-06-29 Monsanto Technology Llc Métodos y composiciones para el control de malezas utilizando polinucleótidos epsps
CN106063385B (zh) * 2014-02-18 2019-08-06 阿卜杜拉国王科技大学 用于在组合物中产生放电的系统和方法
EP3125676A4 (en) 2014-04-01 2018-02-14 Monsanto Technology LLC Compositions and methods for controlling insect pests
CN104010053A (zh) * 2014-05-04 2014-08-27 赵跃 保护膜或保护玻璃与手机通讯连接的方法
JP6354302B2 (ja) * 2014-05-08 2018-07-11 コニカミノルタ株式会社 ガスバリア性フィルム
CA2953347A1 (en) 2014-06-23 2015-12-30 Monsanto Technology Llc Compositions and methods for regulating gene expression via rna interference
US11807857B2 (en) 2014-06-25 2023-11-07 Monsanto Technology Llc Methods and compositions for delivering nucleic acids to plant cells and regulating gene expression
CN114009454A (zh) 2014-07-29 2022-02-08 孟山都技术公司 用于控制昆虫害虫的组合物和方法
KR102278499B1 (ko) 2014-11-27 2021-07-16 한국단자공업 주식회사 벌브용 터미널
CN104516036B (zh) * 2014-12-17 2017-03-08 苏州佳亿达电器有限公司 一种户外路灯用警示贴膜
CN108064288B (zh) 2015-01-22 2021-11-26 孟山都技术公司 用于控制叶甲属的组合物和方法
WO2016148029A1 (ja) * 2015-03-13 2016-09-22 コニカミノルタ株式会社 成膜装置及びガスバリアーフィルムの製造方法
CN104726847B (zh) * 2015-03-30 2017-03-22 武汉理工大学 一种铜酸钆薄膜的制备方法
EP3302053B1 (en) 2015-06-02 2021-03-17 Monsanto Technology LLC Compositions and methods for delivery of a polynucleotide into a plant
US10655136B2 (en) 2015-06-03 2020-05-19 Monsanto Technology Llc Methods and compositions for introducing nucleic acids into plants
CN105276838B (zh) * 2015-10-22 2018-01-05 西安交通大学 一种基于折射的太阳能均光管式反应器或干燥器
US9733488B2 (en) * 2015-11-16 2017-08-15 Younger Mfg. Co. Composite constructed optical lens
US10550010B2 (en) 2015-12-11 2020-02-04 Uchicago Argonne, Llc Oleophilic foams for oil spill mitigation
KR102109832B1 (ko) 2017-02-23 2020-05-12 주식회사 엘지화학 이차전지용 플라즈마 발생장치 및 그를 포함하는 라미네이션 시스템
US10262836B2 (en) * 2017-04-28 2019-04-16 Seongsik Chang Energy-efficient plasma processes of generating free charges, ozone, and light
US11896935B2 (en) 2017-08-17 2024-02-13 Uchicago Argonne, Llc Filtration membranes
KR20230035447A (ko) * 2017-09-20 2023-03-13 어플라이드 머티어리얼스, 인코포레이티드 기판 상의 세라믹 층의 두께를 제어하기 위한 방법 및 처리 시스템
KR101864821B1 (ko) * 2017-11-16 2018-06-05 전북대학교산학협력단 태양전지 보호 기판 코팅용 플라즈마 표면처리 장치
KR101975872B1 (ko) * 2018-03-21 2019-09-10 유림에코 주식회사 부표 코팅 조성물을 이용한 부표
KR101975868B1 (ko) * 2018-03-21 2019-05-07 유림에코 주식회사 부표 코팅 조성물을 이용한 부표
US11590456B2 (en) * 2018-05-31 2023-02-28 Uchicago Argonne, Llc Systems and methods for oleophobic composite membranes
US11351478B2 (en) 2018-09-06 2022-06-07 Uchicago Argonne, Llc Oil skimmer with oleophilic coating
CN109267040B (zh) * 2018-10-24 2020-03-31 江苏菲沃泰纳米科技有限公司 一种丙烯酰胺纳米涂层及其制备方法
US11548798B2 (en) 2019-04-23 2023-01-10 Uchicago Argonne, Llc Compressible foam electrode
CN114303222B (zh) * 2019-09-03 2022-07-08 佳能安内华股份有限公司 X射线产生装置及x射线拍摄装置
CN111501023A (zh) * 2020-04-30 2020-08-07 江苏菲沃泰纳米科技有限公司 亲水防雾膜层及其制备方法、应用和产品
CN111834182B (zh) * 2020-07-20 2022-08-30 中国振华集团永光电子有限公司（国营第八七三厂） 一种半导体电极材料的加工方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10195665A (ja) * 1997-01-10 1998-07-28 Sekisui Chem Co Ltd 放電プラズマ処理方法
JPH11191500A (ja) * 1997-12-25 1999-07-13 Konica Corp グロー放電用電極、及びグロー放電プラズマによる処理方法
EP0997926A2 (en) * 1998-10-26 2000-05-03 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
JP2000309871A (ja) * 1999-04-26 2000-11-07 Sekisui Chem Co Ltd 放電プラズマ処理方法
JP2000338307A (ja) * 1999-05-28 2000-12-08 Dainippon Printing Co Ltd 反射防止フィルム
JP2001181844A (ja) * 1999-12-22 2001-07-03 Sekisui Chem Co Ltd 放電プラズマ薄膜製造装置

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US377164A (en) * 1888-01-31 Head-rest for coffins
US3777164A (en) * 1972-09-29 1973-12-04 Polaroid Corp Electrode for sheet material surface treatment apparatus
US4402888A (en) * 1981-09-14 1983-09-06 Pamarco Incorporated Corona discharge treatment roll
JPS59151112A (ja) 1983-02-17 1984-08-29 Nitto Electric Ind Co Ltd 偏光板
JPS59151110A (ja) 1983-02-17 1984-08-29 Nitto Electric Ind Co Ltd 偏光板
US4968918A (en) * 1987-07-06 1990-11-06 Kanebo, Ltd. Apparatus for plasma treatment
JPH01105738A (ja) 1987-10-19 1989-04-24 Sanyo Kokusaku Pulp Co Ltd 耐擦傷性、耐薬品性、防眩性を付与したトリアセテートフィルム
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
US5192717A (en) * 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
JP3063769B2 (ja) * 1990-07-17 2000-07-12 イーシー化学株式会社 大気圧プラズマ表面処理法
JP2840699B2 (ja) * 1990-12-12 1998-12-24 株式会社 半導体エネルギー研究所 被膜形成装置及び被膜形成方法
JP2901838B2 (ja) * 1992-05-20 1999-06-07 プラクスエア・エス・ティー・テクノロジー・インコーポレイテッド コロナ装置
FR2692730B1 (fr) * 1992-06-19 1994-08-19 Air Liquide Dispositif de formation de molécules gazeuses excitées ou instables et utilisations d'un tel dispositif.
US5562659A (en) * 1992-09-09 1996-10-08 Materials Conversion Corp. Electro-surgical instrument and method of fabrication
JP3425950B2 (ja) * 1992-11-09 2003-07-14 アメリカン ローラ カンパニー，エルエルシー 混合セラミック層を有する電荷ドナーローラ
JP3358029B2 (ja) 1992-11-11 2002-12-16 コニカ株式会社 偏光板用保護フィルム
US5684669A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
JP3286816B2 (ja) * 1992-12-24 2002-05-27 イーシー化学株式会社 大気圧グロ−放電プラズマ処理法
US5401368A (en) * 1993-04-23 1995-03-28 Praxair S.T. Technology, Inc. Fluid-cooled hollow copper electrodes and their use in corona or ozone applications
US5851602A (en) * 1993-12-09 1998-12-22 Applied Materials, Inc. Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors
FR2713666B1 (fr) * 1993-12-15 1996-01-12 Air Liquide Procédé et dispositif de dépôt à basse température d'un film contenant du silicium sur un substrat métallique.
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
FR2719304B1 (fr) * 1994-04-29 1996-07-19 Rhone Poulenc Chimie Agent de captation de cation de métaux lourds comprenant un composé du type silicate ou aluminosilicate et un composé du type carbonate.
WO1996019345A1 (fr) * 1994-12-22 1996-06-27 Dai Nippon Printing Co., Ltd. Film composite
AU715719B2 (en) * 1995-06-19 2000-02-10 University Of Tennessee Research Corporation, The Discharge methods and electrodes for generating plasmas at one atmosphere of pressure, and materials treated therewith
JPH0931645A (ja) * 1995-07-21 1997-02-04 Sharp Corp 誘電体薄膜素子の製造方法
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
JP3457477B2 (ja) * 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
FI110441B (fi) * 1995-10-23 2003-01-31 Metso Paper Inc Menetelmä paperin valmistuksessa käytettävän telan valmistamiseksi, paperin valmistuksessa käytettävä tela ja paperinvalmistuksessa käytettävän telan pinnoite
US5712032A (en) * 1995-11-21 1998-01-27 Armstrong World Industries, Inc. Patterned heat welding rod for seaming resilient flooring
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5925438A (en) * 1996-06-17 1999-07-20 Dai Nippon Printing Co., Ltd. Antireflection film
US6110540A (en) * 1996-07-12 2000-08-29 The Boc Group, Inc. Plasma apparatus and method
KR100296692B1 (ko) * 1996-09-10 2001-10-24 사토 도리 플라즈마cvd장치
US6537621B1 (en) * 1996-10-01 2003-03-25 Tokyo Electron Limited Method of forming a titanium film and a barrier film on a surface of a substrate through lamination
JPH11133205A (ja) 1997-04-21 1999-05-21 Sekisui Chem Co Ltd 反射防止膜の製造方法
AU742051B2 (en) * 1997-07-14 2001-12-13 University Of Tennessee Research Corporation, The Plasma treater systems and treatment methods
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
JPH1161406A (ja) 1997-08-27 1999-03-05 Sekisui Chem Co Ltd 反射・帯電防止膜の製造方法
JPH11148430A (ja) 1997-11-17 1999-06-02 Denso Corp 燃料蒸発ガスパージシステムのリーク判定装置
JP3533094B2 (ja) * 1997-12-17 2004-05-31 積水化学工業株式会社 常圧放電プラズマ処理方法及び常圧プラズマ処理装置
JPH11295209A (ja) 1998-04-08 1999-10-29 Mitsubishi Electric Corp 蟻ノ巣状腐食試験装置
JP2000080043A (ja) 1998-09-01 2000-03-21 Hiroyuki Sumi 水溶性ビタミンｋ剤
JP2000147209A (ja) 1998-09-09 2000-05-26 Sekisui Chem Co Ltd 反射防止フィルム及びその製造方法
JP2000121804A (ja) 1998-10-09 2000-04-28 Sekisui Chem Co Ltd 反射防止フィルム
JP3322303B2 (ja) * 1998-10-28 2002-09-09 日本電気株式会社 半導体記憶装置
JP2000156039A (ja) 1998-11-18 2000-06-06 Bantan International:Kk マルチトラック記録再生方式及び装置
JP2000185362A (ja) 1998-12-24 2000-07-04 Sekisui Chem Co Ltd 金属元素含有薄膜積層体の製造方法
US6082292A (en) * 1999-01-05 2000-07-04 Wisconsin Alumni Research Foundation Sealing roller system for surface treatment gas reactors
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure
US6106523A (en) * 1999-02-08 2000-08-22 Medicor Corporation Implements with composite coating
JP2000273066A (ja) 1999-03-19 2000-10-03 Asahi-Penn Chemical Co Ltd クロロホルメート類の製造方法
JP3530768B2 (ja) 1999-04-22 2004-05-24 トーカロ株式会社 熱遮蔽皮膜の形成方法
JP3037332B1 (ja) 1999-05-27 2000-04-24 ワヨー株式会社 線材固定具
US6284682B1 (en) * 1999-08-26 2001-09-04 The University Of British Columbia Process for making chemically bonded sol-gel ceramics
US6556657B1 (en) * 2000-08-16 2003-04-29 Analogic Corporation X-ray collimator and method of manufacturing an x-ray collimator
US6652069B2 (en) * 2000-11-22 2003-11-25 Konica Corporation Method of surface treatment, device of surface treatment, and head for use in ink jet printer
WO2002048428A1 (en) * 2000-12-12 2002-06-20 Konica Corporation Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor
US6849306B2 (en) * 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
TWI273143B (en) * 2002-06-10 2007-02-11 Konica Corp Layer formation method, and substrate with a layer formed by the method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10195665A (ja) * 1997-01-10 1998-07-28 Sekisui Chem Co Ltd 放電プラズマ処理方法
JPH11191500A (ja) * 1997-12-25 1999-07-13 Konica Corp グロー放電用電極、及びグロー放電プラズマによる処理方法
EP0997926A2 (en) * 1998-10-26 2000-05-03 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
JP2000309871A (ja) * 1999-04-26 2000-11-07 Sekisui Chem Co Ltd 放電プラズマ処理方法
JP2000338307A (ja) * 1999-05-28 2000-12-08 Dainippon Printing Co Ltd 反射防止フィルム
JP2001181844A (ja) * 1999-12-22 2001-07-03 Sekisui Chem Co Ltd 放電プラズマ薄膜製造装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1342810A4 *

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6903512B2 (en) 2001-08-07 2005-06-07 Konica Corporation Half mirror film producing method and optical element comprising a half mirror film
EP1286184A3 (en) * 2001-08-07 2004-04-28 Konica Corporation Half mirror film producing method and optical element comprising a half mirror film
EP1286184A2 (en) * 2001-08-07 2003-02-26 Konica Corporation Half mirror film producing method and optical element comprising a half mirror film
US7632550B2 (en) * 2002-02-15 2009-12-15 Konica Corporation Film forming method employing reactive and reducing gases and substrate formed by the method
JP2004010911A (ja) * 2002-06-03 2004-01-15 Konica Minolta Holdings Inc 透明導電膜の形成方法及びた透明導電膜を有する物品
JP2004013692A (ja) * 2002-06-10 2004-01-15 Konica Minolta Holdings Inc タッチパネル用透明導電性基材
JP2004066224A (ja) * 2002-06-11 2004-03-04 Konica Minolta Holdings Inc 誘電体被覆電極、プラズマ放電処理装置及び薄膜形成方法
JP4710216B2 (ja) * 2002-06-11 2011-06-29 コニカミノルタホールディングス株式会社 薄膜形成方法
JP2004063195A (ja) * 2002-07-26 2004-02-26 Konica Minolta Holdings Inc 透明導電性薄膜を有する物品及びその製造方法、並びに薄膜形成装置
WO2004013376A3 (en) * 2002-07-30 2004-05-06 Saint Gobain Titania coatings by plasma cvd at atmospheric pressure
WO2004013376A2 (en) * 2002-07-30 2004-02-12 Saint-Gobain Glass France Titania coatings by plasma cvd at atmospheric pressure
US7597940B2 (en) 2002-07-30 2009-10-06 Saint-Gobain Glass France Methods for preparing titania coatings by plasma CVD at atmospheric pressure
EP1540714A4 (en) * 2002-08-26 2007-11-14 Sigma Lab Arizona Inc BARRIER COATING PRODUCED BY LUMINESCENT DISCHARGE AT ATMOSPHERIC PRESSURE
EP1540714A2 (en) * 2002-08-26 2005-06-15 Sigma Laboratories of Arizona, Incorporated Barrier coatings produced by atmospheric glow discharge
KR100506588B1 (ko) * 2002-08-26 2005-08-09 (주) 플라즈닉스 플라즈마를 이용하여 피처리물을 처리하는 장치
JP4686956B2 (ja) * 2002-08-28 2011-05-25 コニカミノルタホールディングス株式会社 機能体の形成方法
JP2004084027A (ja) * 2002-08-28 2004-03-18 Konica Minolta Holdings Inc 機能体及びその形成方法
JP4645002B2 (ja) * 2002-09-10 2011-03-09 コニカミノルタホールディングス株式会社 透明導電膜及びその形成方法
JP2004103400A (ja) * 2002-09-10 2004-04-02 Konica Minolta Holdings Inc 透明導電膜及びその形成方法
JP4534081B2 (ja) * 2003-03-20 2010-09-01 コニカミノルタホールディングス株式会社 薄膜形成装置
JP2004285388A (ja) * 2003-03-20 2004-10-14 Konica Minolta Holdings Inc 薄膜形成装置
JP4946049B2 (ja) * 2003-10-07 2012-06-06 コニカミノルタホールディングス株式会社 アモルファス窒化硼素薄膜の製造方法
WO2005035824A1 (ja) * 2003-10-07 2005-04-21 Konica Minolta Holdings, Inc. アモルファス窒化硼素薄膜及びその製造方法、並びに積層膜、透明プラスチックフィルム、及び有機ｅｌ素子
JPWO2006129461A1 (ja) * 2005-06-01 2008-12-25 コニカミノルタホールディングス株式会社 薄膜形成方法及び透明導電膜
WO2006129461A1 (ja) * 2005-06-01 2006-12-07 Konica Minolta Holdings, Inc. 薄膜形成方法及び透明導電膜
EP2278047A1 (en) 2005-08-31 2011-01-26 Konica Minolta Holdings, Inc. Plasma discharge treatment apparatus, and method of manufacturing gas barrier film
EP2298958A1 (en) 2005-08-31 2011-03-23 Konica Minolta Holdings, Inc. Plasma discharge treatment apparatus, and method of manufacturing gas barrier film
WO2007077871A1 (ja) 2006-01-06 2007-07-12 Konica Minolta Holdings, Inc. 防湿性セルロースエステルフィルム、偏光板保護フィルム及び偏光板
WO2008096616A1 (ja) 2007-02-05 2008-08-14 Konica Minolta Holdings, Inc. 透明ガスバリア性フィルム及びその製造方法
WO2008096617A1 (ja) 2007-02-06 2008-08-14 Konica Minolta Holdings, Inc. 透明ガスバリア性フィルム及び透明ガスバリア性フィルムの製造方法
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US7462379B2 (en) 2008-12-09
EP2233606B1 (en) 2013-02-13
KR20020089344A (ko) 2002-11-29
JP2008121123A (ja) 2008-05-29
EP2233605B1 (en) 2012-09-26
KR100846550B1 (ko) 2008-07-15
EP2397576A1 (en) 2011-12-21
US6835425B2 (en) 2004-12-28
JPWO2002048428A1 (ja) 2004-04-15
US20050172899A1 (en) 2005-08-11
US20030082412A1 (en) 2003-05-01
US20030170472A1 (en) 2003-09-11
EP2233606A2 (en) 2010-09-29
KR20080016751A (ko) 2008-02-21
US7044078B2 (en) 2006-05-16
EP1342810A1 (en) 2003-09-10
EP2233605A1 (en) 2010-09-29
US20080268172A1 (en) 2008-10-30
CN100447296C (zh) 2008-12-31
EP1342810A4 (en) 2008-04-09
CN101333654A (zh) 2008-12-31
TWI225897B (en) 2005-01-01
US20050181606A1 (en) 2005-08-18
EP2233606A3 (en) 2011-04-20
CN1398305A (zh) 2003-02-19
CN101333654B (zh) 2011-06-15
JP4254236B2 (ja) 2009-04-15

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