WO2002043116A3 - Etching of high aspect ratio features in a substrate - Google Patents

Etching of high aspect ratio features in a substrate Download PDF

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Publication number
WO2002043116A3
WO2002043116A3 PCT/US2001/046210 US0146210W WO0243116A3 WO 2002043116 A3 WO2002043116 A3 WO 2002043116A3 US 0146210 W US0146210 W US 0146210W WO 0243116 A3 WO0243116 A3 WO 0243116A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
etching
aspect ratio
high aspect
ratio features
Prior art date
Application number
PCT/US2001/046210
Other languages
French (fr)
Other versions
WO2002043116A2 (en
Inventor
Ajay Kumar
Anisul Khan
Alan Ouye
Ralph Wadensweiler
Ananda Kumar
Michael G Chafin
Arnold Kholodenko
Dragan V Podlesnik
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR10-2003-7006046A priority Critical patent/KR20030051765A/en
Priority to JP2002544762A priority patent/JP2004529486A/en
Priority to EP01987258A priority patent/EP1330839A2/en
Publication of WO2002043116A2 publication Critical patent/WO2002043116A2/en
Publication of WO2002043116A3 publication Critical patent/WO2002043116A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches

Abstract

A substrate processing chamber (110) comprisea a gas supply (56) to provide a gas to the chamber, first and second electrodes (115, 105) that may be electrically biased to energize the gas, the second electrode (115) being adapted to be chargeable to a power density of at least about 10 watts/cm2, and the second electrode (115) comprising a receiving surface (147) to receive a substrate (10), and an exhaust (110) to exhaust the gas.
PCT/US2001/046210 2000-11-01 2001-11-01 Etching of high aspect ratio features in a substrate WO2002043116A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR10-2003-7006046A KR20030051765A (en) 2000-11-01 2001-11-01 Etching of high aspect ratio features in a substrate
JP2002544762A JP2004529486A (en) 2000-11-01 2001-11-01 Apparatus and method for etching features having a high aspect ratio on a substrate
EP01987258A EP1330839A2 (en) 2000-11-01 2001-11-01 Etching of high aspect ratio features in a substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US70488700A 2000-11-01 2000-11-01
US70525400A 2000-11-01 2000-11-01
US09/704,887 2000-11-01
US09/705,254 2000-11-01

Publications (2)

Publication Number Publication Date
WO2002043116A2 WO2002043116A2 (en) 2002-05-30
WO2002043116A3 true WO2002043116A3 (en) 2003-05-01

Family

ID=27107399

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/046210 WO2002043116A2 (en) 2000-11-01 2001-11-01 Etching of high aspect ratio features in a substrate

Country Status (5)

Country Link
EP (1) EP1330839A2 (en)
JP (1) JP2004529486A (en)
KR (1) KR20030051765A (en)
CN (1) CN1471727A (en)
WO (1) WO2002043116A2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
CN101978475B (en) 2008-03-21 2013-09-25 应用材料公司 Shielded lid heater assembly
DK2251453T3 (en) 2009-05-13 2014-07-07 Sio2 Medical Products Inc container Holder
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US10595365B2 (en) 2010-10-19 2020-03-17 Applied Materials, Inc. Chamber lid heater ring assembly
US8920599B2 (en) 2010-10-19 2014-12-30 Applied Materials, Inc. High efficiency gas dissociation in inductively coupled plasma reactor with improved uniformity
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
EP2776603B1 (en) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS
CA2887352A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
JP6509734B2 (en) 2012-11-01 2019-05-08 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド Film inspection method
EP2920567B1 (en) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
WO2014085346A1 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Hollow body with inside coating
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
WO2014134577A1 (en) 2013-03-01 2014-09-04 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
KR102211788B1 (en) 2013-03-11 2021-02-04 에스아이오2 메디컬 프로덕츠, 인크. Coated Packaging
WO2014144926A1 (en) 2013-03-15 2014-09-18 Sio2 Medical Products, Inc. Coating method
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
US9349605B1 (en) * 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
CN116982977A (en) 2015-08-18 2023-11-03 Sio2医药产品公司 Medicaments and other packages with low oxygen transmission rate
KR102576706B1 (en) * 2016-04-15 2023-09-08 삼성전자주식회사 Method of manufacturing semiconductor device
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
CN110233102B (en) * 2019-06-18 2021-01-29 北京北方华创微电子装备有限公司 Etching method
CN111048466B (en) * 2019-12-26 2022-08-16 北京北方华创微电子装备有限公司 Wafer clamping device
US11551951B2 (en) * 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
JP2023034881A (en) * 2021-08-31 2023-03-13 株式会社ニューフレアテクノロジー Discharge detection device and charged particle beam irradiation device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0553961A2 (en) * 1992-01-29 1993-08-04 Applied Materials, Inc. Reactive ion etch process including hydrogen radicals
WO1997047783A1 (en) * 1996-06-14 1997-12-18 The Research Foundation Of State University Of New York Methodology and apparatus for in-situ doping of aluminum coatings

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0553961A2 (en) * 1992-01-29 1993-08-04 Applied Materials, Inc. Reactive ion etch process including hydrogen radicals
WO1997047783A1 (en) * 1996-06-14 1997-12-18 The Research Foundation Of State University Of New York Methodology and apparatus for in-situ doping of aluminum coatings

Also Published As

Publication number Publication date
EP1330839A2 (en) 2003-07-30
KR20030051765A (en) 2003-06-25
CN1471727A (en) 2004-01-28
WO2002043116A2 (en) 2002-05-30
JP2004529486A (en) 2004-09-24

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