CN102725433B - 用以沉积防反射层于基材上的方法 - Google Patents
用以沉积防反射层于基材上的方法 Download PDFInfo
- Publication number
- CN102725433B CN102725433B CN201180006772.0A CN201180006772A CN102725433B CN 102725433 B CN102725433 B CN 102725433B CN 201180006772 A CN201180006772 A CN 201180006772A CN 102725433 B CN102725433 B CN 102725433B
- Authority
- CN
- China
- Prior art keywords
- flow
- solid
- voltage
- reactant gases
- nitrogenous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000000151 deposition Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 title abstract description 5
- 230000003667 anti-reflective effect Effects 0.000 title abstract 2
- 239000007789 gas Substances 0.000 claims abstract description 120
- 239000007787 solid Substances 0.000 claims abstract description 48
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000000376 reactant Substances 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 25
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- -1 nitrogenous compound Chemical class 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 210000004027 cell Anatomy 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 14
- 230000007704 transition Effects 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 238000012369 In process control Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002520 cambial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010965 in-process control Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0094—Reactive sputtering in transition mode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Fluid Mechanics (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29694810P | 2010-01-21 | 2010-01-21 | |
US61/296,948 | 2010-01-21 | ||
PCT/IB2011/050235 WO2011089554A1 (de) | 2010-01-21 | 2011-01-19 | Verfahren zur abscheidung einer antireflexschicht auf einem substrat |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102725433A CN102725433A (zh) | 2012-10-10 |
CN102725433B true CN102725433B (zh) | 2014-07-02 |
Family
ID=43904056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180006772.0A Active CN102725433B (zh) | 2010-01-21 | 2011-01-19 | 用以沉积防反射层于基材上的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8263489B2 (zh) |
KR (1) | KR101691686B1 (zh) |
CN (1) | CN102725433B (zh) |
TW (1) | TWI495135B (zh) |
WO (1) | WO2011089554A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6230184B2 (ja) * | 2013-10-10 | 2017-11-15 | 株式会社アルバック | 成膜装置、成膜方法及び金属酸化物薄膜の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6015595A (en) * | 1998-05-28 | 2000-01-18 | Felts; John T. | Multiple source deposition plasma apparatus |
JP3582437B2 (ja) * | 1999-12-24 | 2004-10-27 | 株式会社村田製作所 | 薄膜製造方法及びそれに用いる薄膜製造装置 |
TW507256B (en) * | 2000-03-13 | 2002-10-21 | Mitsubishi Heavy Ind Ltd | Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus |
DE50100613D1 (de) * | 2000-03-27 | 2003-10-16 | Fraunhofer Ges Forschung | Verfahren zur regelung von reaktiven sputterprozessen |
EP2233606B1 (en) | 2000-12-12 | 2013-02-13 | Konica Corporation | Plasma discharge apparatus |
WO2004007797A1 (ja) * | 2002-07-10 | 2004-01-22 | Tokyo Electron Limited | 成膜装置 |
KR101087202B1 (ko) * | 2003-11-27 | 2011-11-29 | 쿄세라 코포레이션 | 태양 전지 모듈 |
JP4393938B2 (ja) | 2004-07-16 | 2010-01-06 | 信越化学工業株式会社 | 電極材料及び太陽電池、並びに太陽電池の製造方法 |
WO2007000469A1 (en) * | 2005-06-29 | 2007-01-04 | Oc Oerlikon Balzers Ag | Method for manufacturing flat substrates |
US8936702B2 (en) | 2006-03-07 | 2015-01-20 | Micron Technology, Inc. | System and method for sputtering a tensile silicon nitride film |
TW200826308A (en) * | 2006-12-05 | 2008-06-16 | Gigastorage Corp | Method of forming thin film on the solar cell substrate by sputtering |
US20080163817A1 (en) * | 2007-01-04 | 2008-07-10 | Oc Oerlikon Balzers Ag | Apparatus for gas handling in vacuum processes |
US20080302653A1 (en) * | 2007-03-29 | 2008-12-11 | Applied Materials Inc. | Method And Device For Producing An Anti-Reflection Or Passivation Layer For Solar Cells |
EP2257964B1 (en) * | 2007-12-07 | 2018-07-11 | Evatec AG | Reactive sputtering with hipims |
US20090320755A1 (en) | 2008-06-25 | 2009-12-31 | Jian Liu | Arrangement for coating a crystalline silicon solar cell with an antireflection/passivation layer |
US20100258169A1 (en) * | 2009-04-13 | 2010-10-14 | Applied Materials , Inc. | Pulsed plasma deposition for forming microcrystalline silicon layer for solar applications |
KR20120052839A (ko) * | 2010-11-16 | 2012-05-24 | 김한식 | 가스 실리콘 증착으로 만든 태양전지 및 기계 |
-
2011
- 2011-01-19 CN CN201180006772.0A patent/CN102725433B/zh active Active
- 2011-01-19 KR KR1020127017596A patent/KR101691686B1/ko active IP Right Grant
- 2011-01-19 WO PCT/IB2011/050235 patent/WO2011089554A1/de active Application Filing
- 2011-01-21 US US13/011,109 patent/US8263489B2/en active Active
- 2011-01-21 TW TW100102296A patent/TWI495135B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN102725433A (zh) | 2012-10-10 |
TW201135961A (en) | 2011-10-16 |
WO2011089554A1 (de) | 2011-07-28 |
US20110177649A1 (en) | 2011-07-21 |
TWI495135B (zh) | 2015-08-01 |
KR101691686B1 (ko) | 2016-12-30 |
US8263489B2 (en) | 2012-09-11 |
KR20120118461A (ko) | 2012-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101567400B (zh) | 薄膜硅太阳能电池及其制造方法 | |
EP0032788B1 (en) | Method for depositing coatings in a glow discharge | |
CN101609858B (zh) | 薄膜沉积方法 | |
US20110088762A1 (en) | Barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells | |
US20080188062A1 (en) | Method of forming microcrystalline silicon film | |
CN101563477A (zh) | 透明导电薄膜的反应性溅射沉积方法 | |
KR20080106423A (ko) | 신장성 있는 실리콘 질화막을 스퍼터링하기 위한 시스템 및방법 | |
CN102804397A (zh) | 用于微结构受控制的薄膜沉积的离子化物理汽相沉积 | |
Liu et al. | Refractive index graded anti-reflection coating for solar cells based on low cost reclaimed silicon | |
CN102725433B (zh) | 用以沉积防反射层于基材上的方法 | |
CN103924191A (zh) | 在基片上镀制ito薄膜的方法 | |
CN105047750A (zh) | 一种提高薄膜太阳能电池转换效率的方法 | |
CN101931022A (zh) | 晶体硅太阳能电池的制备方法 | |
TWI484654B (zh) | 薄膜太陽能電池之製造方法 | |
CN102031503B (zh) | 硅薄膜的沉积方法 | |
CN104651796A (zh) | Ito薄膜的电阻调节方法 | |
CN102834546B (zh) | 用于在光伏应用中沉积微晶材料的方法和设备 | |
CN105304752B (zh) | 绒面硼掺杂氧化锌基透明导电薄膜的生长方法和生长装置 | |
CN103849854A (zh) | 制备氧化锌薄膜的方法 | |
US20110284062A1 (en) | Method for the deposition of microcrystalline silicon on a substrate | |
JP2001291882A (ja) | 薄膜の製造方法 | |
CN111778478B (zh) | 薄膜沉积方法 | |
CN117626187A (zh) | 一种利用rpd以铟锡合金作为源反应沉积低成本ito薄膜的方法 | |
CN105826402A (zh) | 一种抗pid的氮化硅减反射膜及其制备方法与应用 | |
Winderbaum et al. | Characterisation of industrial-scale remote PECVD SiN depositions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OERLIKON ADVANCED TECHNOLOGIES AG Free format text: FORMER OWNER: OC OERLIKON BALZERS AG Effective date: 20141105 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20141105 Address after: Liechtenstein Barr Che J Patentee after: OC OERLIKON BALZERS AG Address before: Liechtenstein Barr Che J Patentee before: OC Oerlikon Balzers AG |
|
CP01 | Change in the name or title of a patent holder |
Address after: Liechtenstein Barr Che J Patentee after: AIFA advanced technology Co.,Ltd. Address before: Liechtenstein Barr Che J Patentee before: OC OERLIKON BALZERS AG |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200302 Address after: Swiss Te Lui Bach Patentee after: EVATEC AG Address before: Liechtenstein Barr Che J Patentee before: AIFA advanced technology Co.,Ltd. |
|
TR01 | Transfer of patent right |