TWI883015B - 烘烤基板上之光阻層的方法及設備 - Google Patents

烘烤基板上之光阻層的方法及設備 Download PDF

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Publication number
TWI883015B
TWI883015B TW109121649A TW109121649A TWI883015B TW I883015 B TWI883015 B TW I883015B TW 109121649 A TW109121649 A TW 109121649A TW 109121649 A TW109121649 A TW 109121649A TW I883015 B TWI883015 B TW I883015B
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Taiwan
Prior art keywords
substrate
photoresist layer
baking
reactive gas
gas species
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TW109121649A
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English (en)
Chinese (zh)
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TW202115509A (zh
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蒂莫西 威廉 魏德曼
吳呈昊
凱蒂 林恩 納迪
博里斯 佛洛斯基
凱文 李 古
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美商蘭姆研究公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/265Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/36Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW109121649A 2019-06-28 2020-06-24 烘烤基板上之光阻層的方法及設備 TWI883015B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962868708P 2019-06-28 2019-06-28
US62/868,708 2019-06-28

Publications (2)

Publication Number Publication Date
TW202115509A TW202115509A (zh) 2021-04-16
TWI883015B true TWI883015B (zh) 2025-05-11

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TW109121649A TWI883015B (zh) 2019-06-28 2020-06-24 烘烤基板上之光阻層的方法及設備
TW114113726A TW202546558A (zh) 2019-06-28 2020-06-24 烘烤基板上之光阻層的方法及設備
TW114115269A TW202546559A (zh) 2019-06-28 2020-06-24 烘烤基板上之光阻層的方法及設備

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TW114113726A TW202546558A (zh) 2019-06-28 2020-06-24 烘烤基板上之光阻層的方法及設備
TW114115269A TW202546559A (zh) 2019-06-28 2020-06-24 烘烤基板上之光阻層的方法及設備

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US (2) US12601974B2 (https=)
EP (2) EP4567518A3 (https=)
JP (2) JP7589179B2 (https=)
KR (2) KR102937721B1 (https=)
CN (1) CN114026497A (https=)
TW (3) TWI883015B (https=)
WO (1) WO2020264556A1 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
TWI884927B (zh) 2018-10-17 2025-06-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12416861B2 (en) 2019-04-12 2025-09-16 Inpria Corporation Organometallic photoresist developer compositions and processing methods
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102937721B1 (ko) 2019-06-28 2026-03-12 램 리써치 코포레이션 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
EP4115242A4 (en) * 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
JP2023530299A (ja) 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
JP7717793B2 (ja) * 2021-04-01 2025-08-04 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物
TWI891994B (zh) * 2021-04-02 2025-08-01 美商蘭姆研究公司 來自含金屬光阻之金屬汙染物的控制
US12204246B2 (en) * 2021-06-08 2025-01-21 Applied Materials, Inc. Metal oxide resist patterning with electrical field guided post-exposure bake
CN113913926A (zh) * 2021-10-22 2022-01-11 西安奕斯伟材料科技有限公司 外延反应腔室的恢复方法、外延生长装置及外延晶圆
JP2023142946A (ja) * 2022-03-25 2023-10-06 東京エレクトロン株式会社 基板処理方法、記憶媒体及び基板処理装置
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
KR20250057876A (ko) * 2022-09-09 2025-04-29 어플라이드 머티어리얼스, 인코포레이티드 Euv 리소그래피를 위한 진공 베이크
CN115291481A (zh) * 2022-10-09 2022-11-04 广州粤芯半导体技术有限公司 半导体工艺方法
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015513540A (ja) * 2012-02-27 2015-05-14 インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation 電子ビーム、ディープuvおよび極短uvフォトレジスト用途の有機共配位子を含む金属ペルオキソ化合物
TW201734667A (zh) * 2016-03-18 2017-10-01 台灣積體電路製造股份有限公司 圖案化光阻層的方法
JP2018098229A (ja) * 2016-12-08 2018-06-21 東京エレクトロン株式会社 基板処理方法及び熱処理装置

Family Cites Families (256)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576755A (en) 1964-09-24 1971-04-27 American Cyanamid Co Photochromism in plastic film containing inorganic materials
US3513010A (en) 1966-07-11 1970-05-19 Kalvar Corp Conversion foil
US3529963A (en) 1966-08-23 1970-09-22 Du Pont Image-yielding elements and processes
US3720515A (en) 1971-10-20 1973-03-13 Trw Inc Microelectronic circuit production
JPS52144972A (en) 1976-05-28 1977-12-02 Hitachi Ltd Formation method of photo resist film
US4241165A (en) 1978-09-05 1980-12-23 Motorola, Inc. Plasma development process for photoresist
US4328298A (en) 1979-06-27 1982-05-04 The Perkin-Elmer Corporation Process for manufacturing lithography masks
US4314022A (en) 1980-05-05 1982-02-02 Minnesota Mining And Manufacturing Company Photoresist developers and process
JPS5883847A (ja) 1981-11-14 1983-05-19 Konishiroku Photo Ind Co Ltd 金属画像形成材料用処理液
JPS60115222A (ja) 1983-11-28 1985-06-21 Tokyo Ohka Kogyo Co Ltd 微細パタ−ン形成方法
JPS62160981A (ja) 1986-01-08 1987-07-16 Mitsubishi Heavy Ind Ltd 石油タンカ−の改造法
JPH0778629B2 (ja) 1986-12-19 1995-08-23 ミノルタ株式会社 ポジ型レジスト膜及びそのレジストパターンの形成方法
US5077085A (en) 1987-03-06 1991-12-31 Schnur Joel M High resolution metal patterning of ultra-thin films on solid substrates
US4814243A (en) * 1987-09-08 1989-03-21 American Telephone And Telegraph Company Thermal processing of photoresist materials
US4834834A (en) 1987-11-20 1989-05-30 Massachusetts Institute Of Technology Laser photochemical etching using surface halogenation
US4845053A (en) 1988-01-25 1989-07-04 John Zajac Flame ashing process for stripping photoresist
JP2841627B2 (ja) 1990-02-02 1998-12-24 日本電気株式会社 半導体ウェーハの洗浄方法
JP2994501B2 (ja) 1991-09-13 1999-12-27 株式会社東芝 パターン形成方法
US5322765A (en) 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
GEP20002074B (en) 1992-05-19 2000-05-10 Westaim Tech Inc Ca Modified Material and Method for its Production
JP3654597B2 (ja) 1993-07-15 2005-06-02 株式会社ルネサステクノロジ 製造システムおよび製造方法
JP3338134B2 (ja) 1993-08-02 2002-10-28 株式会社東芝 半導体ウエハ処理方法
JPH0757995A (ja) 1993-08-16 1995-03-03 Toshiba Corp レジストパターン形成方法
JPH07106224A (ja) 1993-10-01 1995-04-21 Hitachi Ltd パターン形成方法
JP3316078B2 (ja) 1994-03-04 2002-08-19 日本表面化学株式会社 レジスト剥離液
JPH0831781A (ja) 1994-07-13 1996-02-02 Sony Corp 洗浄薬液
US5534312A (en) 1994-11-14 1996-07-09 Simon Fraser University Method for directly depositing metal containing patterned films
JPH08213304A (ja) 1995-02-06 1996-08-20 Toshiba Corp レジストパタ−ンの形成方法
US5948570A (en) 1995-05-26 1999-09-07 Lucent Technologies Inc. Process for dry lithographic etching
JPH08339950A (ja) 1995-06-09 1996-12-24 Sony Corp フォトレジストパターン形成方法及びフォトレジスト処理装置
US6007963A (en) 1995-09-21 1999-12-28 Sandia Corporation Method for extreme ultraviolet lithography
JPH09312247A (ja) * 1996-05-21 1997-12-02 Hitachi Ltd パターン形成方法及びパターン形成装置
JP2950785B2 (ja) 1996-12-09 1999-09-20 セントラル硝子株式会社 酸化膜のドライエッチング方法
US6261938B1 (en) 1997-02-12 2001-07-17 Quantiscript, Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
JPH10301298A (ja) 1997-02-28 1998-11-13 Toyobo Co Ltd 感光性樹脂版の現像液および現像方法
JP3477077B2 (ja) 1997-07-01 2003-12-10 株式会社東芝 ネガ型感光性樹脂組成物、これを用いたパターン形成方法、および電子部品
US6290779B1 (en) 1998-06-12 2001-09-18 Tokyo Electron Limited Systems and methods for dry cleaning process chambers
US6348239B1 (en) 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
ATE368756T1 (de) 1998-09-16 2007-08-15 Applied Materials Inc Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck
JP3177973B2 (ja) 1999-01-28 2001-06-18 日本電気株式会社 半導体装置の製造方法
US7232742B1 (en) 1999-11-26 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film
US6582891B1 (en) * 1999-12-02 2003-06-24 Axcelis Technologies, Inc. Process for reducing edge roughness in patterned photoresist
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
JP2001250813A (ja) 2000-03-06 2001-09-14 Hitachi Ltd プラズマ処理方法
US20060001064A1 (en) 2000-04-28 2006-01-05 Hill Ross H Methods for the lithographic deposition of ferroelectric materials
US20040191423A1 (en) 2000-04-28 2004-09-30 Ruan Hai Xiong Methods for the deposition of silver and silver oxide films and patterned films
KR20030007904A (ko) 2000-06-06 2003-01-23 이케이씨 테크놀로지, 인코포레이티드 전자 재료 제조 방법
KR100406174B1 (ko) 2000-06-15 2003-11-19 주식회사 하이닉스반도체 화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드
JP2002015971A (ja) 2000-06-27 2002-01-18 Matsushita Electric Ind Co Ltd パターン形成方法及び半導体装置の製造装置
KR100398312B1 (ko) 2000-06-30 2003-09-19 한국과학기술원 유기금속을 함유하고 있는 노르보넨 단량체, 이들의고분자 중합체를 함유하는 포토레지스트, 및 그제조방법과, 포토레지스트 패턴 형성방법
JP2002134402A (ja) 2000-08-15 2002-05-10 Tokyo Electron Ltd 基板処理方法及び基板処理装置
JP2005123651A (ja) 2000-12-26 2005-05-12 Toshiba Corp レジスト膜の処理装置、およびレジストパターン形成方法
US6797439B1 (en) 2001-03-30 2004-09-28 Schott Lithotec Ag Photomask with back-side anti-reflective layer and method of manufacture
US6686132B2 (en) * 2001-04-20 2004-02-03 The Regents Of The University Of California Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake
US6350689B1 (en) 2001-04-23 2002-02-26 Chartered Semiconductor Manufacturing Ltd. Method to remove copper contamination by using downstream oxygen and chelating agent plasma
US6933673B2 (en) 2001-04-27 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and process of manufacturing the same
US6926957B2 (en) 2001-06-29 2005-08-09 3M Innovative Properties Company Water-based ink-receptive coating
JP2003213001A (ja) 2001-11-13 2003-07-30 Sekisui Chem Co Ltd 光反応性組成物
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
EP2317383A3 (en) 2002-04-11 2011-12-28 HOYA Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
JP3806702B2 (ja) 2002-04-11 2006-08-09 Hoya株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
DE10219173A1 (de) 2002-04-30 2003-11-20 Philips Intellectual Property Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
US6777173B2 (en) 2002-08-30 2004-08-17 Lam Research Corporation H2O vapor as a processing gas for crust, resist, and residue removal for post ion implant resist strip
JP2006504136A (ja) 2002-10-21 2006-02-02 ナノインク インコーポレーティッド ナノメートル・スケール設計構造、その製造方法および装置、マスク修復、強化、および製造への適用
US20040121264A1 (en) 2002-12-04 2004-06-24 Bernhard Liegl Pattern transfer in device fabrication
JP4153783B2 (ja) 2002-12-09 2008-09-24 株式会社東芝 X線平面検出器
EP1609175A1 (en) 2003-03-31 2005-12-28 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
GB0323805D0 (en) 2003-10-10 2003-11-12 Univ Southampton Synthesis of germanium sulphide and related compounds
US7126128B2 (en) 2004-02-13 2006-10-24 Kabushiki Kaisha Toshiba Flat panel x-ray detector
JP4202962B2 (ja) 2004-04-27 2008-12-24 株式会社東芝 基板処理方法及び半導体装置の製造方法
US20050250052A1 (en) 2004-05-10 2005-11-10 Nguyen Khe C Maskless lithography using UV absorbing nano particle
JP2006253282A (ja) 2005-03-09 2006-09-21 Ebara Corp 金属膜のパターン形成方法
US20060068173A1 (en) 2004-09-30 2006-03-30 Ebara Corporation Methods for forming and patterning of metallic films
JP4565194B2 (ja) 2004-12-17 2010-10-20 国立大学法人大阪大学 極端紫外光・x線源用ターゲット及びその製造方法
KR100601979B1 (ko) * 2004-12-30 2006-07-18 삼성전자주식회사 반도체 웨이퍼의 베이킹 장치
KR100607201B1 (ko) 2005-01-04 2006-08-01 삼성전자주식회사 극자외선 리소그래피 공정에서 웨이퍼 상의 임계 치수편차를 보정하는 방법
US7381633B2 (en) 2005-01-27 2008-06-03 Hewlett-Packard Development Company, L.P. Method of making a patterned metal oxide film
US7868304B2 (en) 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7579497B2 (en) 2005-03-30 2009-08-25 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified resist composition containing the same
US7288514B2 (en) 2005-04-14 2007-10-30 The Clorox Company Polymer-fluorosurfactant associative complexes
JP4530933B2 (ja) 2005-07-21 2010-08-25 大日本スクリーン製造株式会社 基板熱処理装置
US7517640B2 (en) 2005-08-11 2009-04-14 Texas Instruments Incorporated Method for removing photoresist using a thermal bake in the presence of hydrogen and a semiconductor device manufactured using the same
JP4530980B2 (ja) 2005-08-26 2010-08-25 東京応化工業株式会社 膜形成用材料およびパターン形成方法
US7909960B2 (en) 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US8664124B2 (en) 2005-10-31 2014-03-04 Novellus Systems, Inc. Method for etching organic hardmasks
US20110198756A1 (en) 2005-11-28 2011-08-18 Thenappan Ue Organometallic Precursors and Related Intermediates for Deposition Processes, Their Production and Methods of Use
JP2007207530A (ja) 2006-01-31 2007-08-16 Toshiba Corp 異方性導電膜及びこれを用いたx線平面検出器、赤外線平面検出器及び表示装置
US7682659B1 (en) 2006-04-10 2010-03-23 The Regents Of The University Of California Fabrication of suspended carbon micro and nanoscale structures
US7578889B2 (en) 2007-03-30 2009-08-25 Lam Research Corporation Methodology for cleaning of surface metal contamination from electrode assemblies
JP4503095B2 (ja) 2007-05-15 2010-07-14 キヤノンアネルバ株式会社 半導体素子の製造方法
JP5176423B2 (ja) 2007-08-10 2013-04-03 東京エレクトロン株式会社 石英製品のベーク方法及び記憶媒体
US20100275982A1 (en) 2007-09-04 2010-11-04 Malcolm Abbott Group iv nanoparticle junctions and devices therefrom
WO2009049048A2 (en) 2007-10-12 2009-04-16 Ultradots, Inc. Solar modules with enhanced efficiencies via use of spectral concentrators
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
KR100921932B1 (ko) 2007-10-25 2009-10-15 포항공과대학교 산학협력단 다원자분자를 이용한 패터닝방법
US8236476B2 (en) 2008-01-08 2012-08-07 International Business Machines Corporation Multiple exposure photolithography methods and photoresist compositions
US20090197086A1 (en) 2008-02-04 2009-08-06 Sudha Rathi Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithography
US8153348B2 (en) 2008-02-20 2012-04-10 Applied Materials, Inc. Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch
US7985513B2 (en) 2008-03-18 2011-07-26 Advanced Micro Devices, Inc. Fluorine-passivated reticles for use in lithography and methods for fabricating the same
JP2009294439A (ja) 2008-06-05 2009-12-17 Toshiba Corp レジストパターン形成方法
US20090325387A1 (en) 2008-06-26 2009-12-31 Applied Materials, Inc. Methods and apparatus for in-situ chamber dry clean during photomask plasma etching
WO2010007955A1 (ja) 2008-07-14 2010-01-21 旭硝子株式会社 Euvリソグラフィ用反射型マスクブランク、および、euvリソグラフィ用反射型マスク
KR20110046439A (ko) 2008-07-24 2011-05-04 코비오 인코포레이티드 알루미늄 잉크 및 이의 제조 방법, 알루미늄 잉크 증착 방법 및 알루미늄 잉크의 인쇄 및/또는 증착에 의해 형성된 필름
EP2326744B1 (en) * 2008-08-07 2022-06-01 Pryog, LLC Metal compositions and methods of making same
JP2010074065A (ja) 2008-09-22 2010-04-02 Canon Anelva Corp 酸化膜除去のための基板洗浄処理方法
US7977235B2 (en) 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
JP5580546B2 (ja) 2009-04-07 2014-08-27 ルネサスエレクトロニクス株式会社 レジストパターン形成方法
JP5193121B2 (ja) 2009-04-17 2013-05-08 東京エレクトロン株式会社 レジスト塗布現像方法
US20100304027A1 (en) 2009-05-27 2010-12-02 Applied Materials, Inc. Substrate processing system and methods thereof
US7998359B2 (en) 2010-09-24 2011-08-16 Innovalight, Inc. Methods of etching silicon-containing films on silicon substrates
JP2011099956A (ja) 2009-11-05 2011-05-19 Toppan Printing Co Ltd レジストのベーク方法及びベーク装置
TWI494682B (zh) 2009-11-18 2015-08-01 Hoya股份有限公司 基板之再生方法、光罩基底之製造方法、附多層反射膜基板之製造方法及反射型光罩基底之製造方法
CN102656517B (zh) 2009-12-28 2014-05-14 旭硝子株式会社 感光性组合物、间隔壁、彩色滤光片及有机el元件
US8343371B2 (en) 2010-01-15 2013-01-01 Tokyo Electron Limited Apparatus and method for improving photoresist properties using a quasi-neutral beam
JP5068831B2 (ja) 2010-02-05 2012-11-07 信越化学工業株式会社 レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
US8338086B2 (en) 2010-03-31 2012-12-25 Tokyo Electron Limited Method of slimming radiation-sensitive material lines in lithographic applications
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
SG177021A1 (en) 2010-06-16 2012-01-30 Univ Nanyang Tech Micoelectrode array sensor for detection of heavy metals in aqueous solutions
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
BR112013010241B1 (pt) 2010-10-28 2018-03-20 The Procter & Gamble Company Composições para cuidados pessoais que compreendem uma piritiona e um quelador de ferro
WO2012088369A2 (en) 2010-12-23 2012-06-28 The Ohio State University Fertilizer composition and method
US8778816B2 (en) 2011-02-04 2014-07-15 Applied Materials, Inc. In situ vapor phase surface activation of SiO2
JP5708522B2 (ja) 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US9281207B2 (en) 2011-02-28 2016-03-08 Inpria Corporation Solution processible hardmasks for high resolution lithography
US8709706B2 (en) 2011-06-15 2014-04-29 Applied Materials, Inc. Methods and apparatus for performing multiple photoresist layer development and etching processes
CN108594599B (zh) 2011-07-08 2022-04-22 Asml荷兰有限公司 抗蚀剂材料、光刻图案化方法和氧化物的用途
CN102610516B (zh) 2011-07-22 2015-01-21 上海华力微电子有限公司 一种提高光刻胶与金属/金属化合物表面之间粘附力的方法
EP2783389B1 (en) 2011-11-21 2021-03-10 Brewer Science, Inc. Structure comprising assist layers for euv lithography and method for forming it
US8691476B2 (en) 2011-12-16 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and method for forming the same
JP5705103B2 (ja) 2011-12-26 2015-04-22 株式会社東芝 パターン形成方法
KR101920711B1 (ko) 2012-01-16 2018-11-22 삼성전자주식회사 박막 패터닝 방법 및 이를 이용한 반도체소자의 제조방법
SG193093A1 (en) 2012-02-13 2013-09-30 Novellus Systems Inc Method for etching organic hardmasks
CN104284776B (zh) 2012-05-14 2016-01-06 柯尼卡美能达株式会社 气体阻隔性膜、气体阻隔性膜的制造方法及电子设备
SG195494A1 (en) 2012-05-18 2013-12-30 Novellus Systems Inc Carbon deposition-etch-ash gap fill process
US9547238B2 (en) 2012-10-16 2017-01-17 Eugen Pavel Photoresist with rare-earth sensitizers
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
JP5913077B2 (ja) 2012-12-18 2016-04-27 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
US9017568B2 (en) 2013-01-22 2015-04-28 Tel Fsi, Inc. Process for increasing the hydrophilicity of silicon surfaces following HF treatment
JP6134522B2 (ja) 2013-01-30 2017-05-24 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US9057960B2 (en) * 2013-02-04 2015-06-16 International Business Machines Corporation Resist performance for the negative tone develop organic development process
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US9607904B2 (en) 2013-03-11 2017-03-28 Intermolecular, Inc. Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices
US9223220B2 (en) 2013-03-12 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photo resist baking in lithography process
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
WO2014159427A1 (en) 2013-03-14 2014-10-02 Applied Materials, Inc Resist hardening and development processes for semiconductor device manufacturing
US10074544B2 (en) 2013-04-23 2018-09-11 Massachusetts Institute Of Technology Developer free positive tone lithography by thermal direct write
EP3007206A4 (en) 2013-05-24 2017-03-15 Mitsui Chemicals, Inc. Pellicle and euv exposure device comprising same
US10197912B2 (en) 2013-05-24 2019-02-05 Boe Technology Group Co., Ltd. Method for manufacturing color photoresist pattern in color filter
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
US9372402B2 (en) 2013-09-13 2016-06-21 The Research Foundation For The State University Of New York Molecular organometallic resists for EUV
JP5917477B2 (ja) 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
CN111562720B (zh) 2014-02-21 2023-09-29 东京毅力科创株式会社 光增感化学放大型抗蚀剂材料、图案形成方法、半导体器件、光刻用掩模、纳米压印用模板
TWI575566B (zh) 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
KR20160146839A (ko) 2014-04-22 2016-12-21 사빅 글로벌 테크놀러지스 비.브이. 집적 플랙서블 투명 전도성 필름
WO2015178464A1 (ja) 2014-05-21 2015-11-26 国立大学法人大阪大学 レジストパターン形成方法、レジスト潜像形成装置およびレジスト材料
KR101989707B1 (ko) 2014-07-08 2019-06-14 도쿄엘렉트론가부시키가이샤 네거티브톤 현상제 겸용 포토레지스트 조성물 및 이용 방법
GB201412201D0 (en) 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
JP6456967B2 (ja) 2014-09-02 2019-01-23 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、レジスト組成物、及び、レジスト膜
US20160086864A1 (en) 2014-09-24 2016-03-24 Lam Research Corporation Movable gas nozzle in drying module
JP6571171B2 (ja) 2014-09-25 2019-09-04 ザ プロクター アンド ギャンブル カンパニーThe Procter & Gamble Company スルホン酸基含有ポリマーを含む洗濯洗剤及び洗浄組成物
CN105489635B (zh) 2014-10-13 2018-09-21 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
KR102696070B1 (ko) 2014-10-23 2024-08-16 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
CN104637792A (zh) 2015-02-12 2015-05-20 武汉新芯集成电路制造有限公司 一种改善光刻胶剥离缺陷的方法
US9551924B2 (en) 2015-02-12 2017-01-24 International Business Machines Corporation Structure and method for fixing phase effects on EUV mask
US20180047898A1 (en) 2015-03-09 2018-02-15 Versum Materials Us, Llc Process for depositing porous organosilicate glass films for use as resistive random access memory
JP6404757B2 (ja) 2015-03-27 2018-10-17 信越化学工業株式会社 レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
US9829790B2 (en) * 2015-06-08 2017-11-28 Applied Materials, Inc. Immersion field guided exposure and post-exposure bake process
WO2017002497A1 (ja) 2015-06-30 2017-01-05 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
US10468249B2 (en) 2015-09-28 2019-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process of a semiconductor structure with a middle layer
EP4273625A3 (en) 2015-10-13 2024-02-28 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
JP6552070B2 (ja) 2015-11-25 2019-07-31 国立大学法人大阪大学 レジストパターン形成方法およびレジスト材料
JP6603115B2 (ja) 2015-11-27 2019-11-06 信越化学工業株式会社 ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
US10503070B2 (en) 2015-12-10 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Photosensitive material and method of lithography
US10948825B2 (en) 2015-12-23 2021-03-16 Asml Netherlands B.V. Method for removing photosensitive material on a substrate
WO2017144343A1 (en) 2016-02-23 2017-08-31 Asml Netherlands B.V. Method of controlling a patterning process, lithographic apparatus, metrology apparatus lithographic cell and associated computer program
US10018920B2 (en) 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
CN108780739B (zh) 2016-03-11 2023-09-15 因普里亚公司 预图案化光刻模板、基于使用该模板的辐射图案化的工艺及形成该模板的工艺
CN109154772B (zh) 2016-05-19 2023-11-07 Asml荷兰有限公司 抗蚀剂组合物
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
WO2018004551A1 (en) 2016-06-28 2018-01-04 Intel Corporation Polysilane-, polygermane-, and polystannane-based materials for euv and ebeam lithography
US10866516B2 (en) 2016-08-05 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-compound-removing solvent and method in lithography
KR102791311B1 (ko) 2016-08-12 2025-04-04 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
JPWO2018061670A1 (ja) 2016-09-29 2019-06-24 富士フイルム株式会社 処理液、および積層体の処理方法
EP4290532A3 (en) 2016-09-29 2024-03-20 The Regents of the University of California Separation of metal ions by liquid-liquid extraction
KR102614850B1 (ko) * 2016-10-05 2023-12-18 삼성전자주식회사 반도체 소자 제조방법
US10755942B2 (en) 2016-11-02 2020-08-25 Massachusetts Institute Of Technology Method of forming topcoat for patterning
US10520821B2 (en) 2016-11-29 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography process with enhanced etch selectivity
JP6955073B2 (ja) 2016-12-08 2021-10-27 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US9929012B1 (en) 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
US10866511B2 (en) 2016-12-15 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet photolithography method with developer composition
KR102047538B1 (ko) 2017-02-03 2019-11-21 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
US10096477B2 (en) 2017-02-15 2018-10-09 International Business Machines Corporation Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography
US20200002568A1 (en) 2017-03-16 2020-01-02 Merck Patent Gmbh Lithographic compositions and methods of use thereof
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US20180308687A1 (en) 2017-04-24 2018-10-25 Lam Research Corporation Euv photopatterning and selective deposition for negative pattern mask
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US10545408B2 (en) 2017-08-18 2020-01-28 Varian Semiconductor Equipment Associates, Inc. Performance improvement of EUV photoresist by ion implantation
WO2019059074A1 (ja) 2017-09-19 2019-03-28 Jsr株式会社 レジストパターン形成方法及び基板の処理方法
KR102067081B1 (ko) 2017-11-01 2020-01-16 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
US11300878B2 (en) 2017-11-13 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist developer and method of developing photoresist
KR102918243B1 (ko) 2017-11-20 2026-01-26 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7010195B2 (ja) 2017-11-29 2022-01-26 信越化学工業株式会社 パターン形成方法
US11243465B2 (en) 2017-12-18 2022-02-08 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
JP7024744B2 (ja) 2018-02-22 2022-02-24 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
TWI814552B (zh) 2018-04-05 2023-09-01 美商英培雅股份有限公司 錫十二聚物及具有強euv吸收的輻射可圖案化塗層
US11673903B2 (en) 2018-04-11 2023-06-13 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US10787466B2 (en) 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US20190348292A1 (en) 2018-05-10 2019-11-14 International Business Machines Corporation Transferring euv resist pattern to eliminate pattern transfer defectivity
EP3791231A4 (en) 2018-05-11 2022-01-26 Lam Research Corporation PROCESS FOR THE MANUFACTURE OF EUV SAMPLE HARD MASKS
KR102590254B1 (ko) 2018-06-14 2023-10-17 오사카 유니버시티 레지스트패턴 형성방법
US11016386B2 (en) 2018-06-15 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of forming photoresist pattern
WO2019246254A1 (en) 2018-06-21 2019-12-26 Inpria Corporation Stable solutions of monoalkyl tin alkoxides and their hydrolysis and condensation products
KR102306444B1 (ko) 2018-07-31 2021-09-28 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US10838304B2 (en) 2018-08-13 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Priming material for organometallic resist
JP7241486B2 (ja) 2018-08-21 2023-03-17 東京エレクトロン株式会社 マスクの形成方法
TWI884927B (zh) 2018-10-17 2025-06-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
US12025919B2 (en) 2018-11-30 2024-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of storing photoresist coated substrates and semiconductor substrate container arrangement
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
US11966158B2 (en) 2019-01-30 2024-04-23 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
US11498934B2 (en) 2019-01-30 2022-11-15 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods
JP7208813B2 (ja) 2019-02-08 2023-01-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12416861B2 (en) 2019-04-12 2025-09-16 Inpria Corporation Organometallic photoresist developer compositions and processing methods
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN114365044A (zh) 2019-06-27 2022-04-15 朗姆研究公司 用于光致抗蚀剂干式沉积的设备
KR102937721B1 (ko) 2019-06-28 2026-03-12 램 리써치 코포레이션 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들
TW202536930A (zh) 2019-06-28 2025-09-16 美商蘭姆研究公司 光阻膜的乾式腔室清潔
TWI862621B (zh) 2019-07-09 2024-11-21 荷蘭商Asm Ip私人控股有限公司 包括光阻底層之結構及其形成方法
US11782345B2 (en) 2019-08-05 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom antireflective coating materials
US20220299877A1 (en) 2019-10-08 2022-09-22 Lam Research Corporation Positive tone development of cvd euv resist films
TWI846966B (zh) 2019-10-10 2024-07-01 荷蘭商Asm Ip私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115398347A (zh) 2020-02-04 2022-11-25 朗姆研究公司 提高含金属euv抗蚀剂干式显影性能的涂敷/暴露后处理
EP4115242A4 (en) 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
US11822237B2 (en) 2020-03-30 2023-11-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US20240192590A1 (en) 2020-03-31 2024-06-13 Lam Research Corporation Apparatus and process for euv dry resist sensitization by gas phase infusion of a sensitizer
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
US11886116B2 (en) 2020-05-06 2024-01-30 Inpria Corporation Multiple patterning with organometallic photopatternable layers with intermediate freeze steps
KR20250160239A (ko) 2020-06-22 2025-11-11 램 리써치 코포레이션 포토레지스트의 건식 배면 및 베벨 에지 세정
JP2023530299A (ja) 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
WO2022006349A1 (en) 2020-07-02 2022-01-06 Lam Research Corporation Removable cvd polymer film for surface protection and queue period extension
WO2022016126A1 (en) 2020-07-17 2022-01-20 Lam Research Corporation Metal chelators for development of metal-containing photoresist
JP2023535349A (ja) 2020-07-17 2023-08-17 ラム リサーチ コーポレーション 感光性ハイブリッド膜の形成方法
US20220037152A1 (en) 2020-07-30 2022-02-03 Tokyo Electron Limited Plasma Pre-Treatment Method To Improve Etch Selectivity And Defectivity Margin
US11079682B1 (en) 2020-11-13 2021-08-03 Tokyo Electron Limited Methods for extreme ultraviolet (EUV) resist patterning development
TWI891994B (zh) 2021-04-02 2025-08-01 美商蘭姆研究公司 來自含金屬光阻之金屬汙染物的控制
CN117730281A (zh) 2021-07-26 2024-03-19 朗姆研究公司 用于改善含金属抗蚀剂的干式显影性能的多步骤暴露后处理
KR102680084B1 (ko) 2021-07-29 2024-07-02 램 리써치 코포레이션 금속-함유 포토레지스트의 재작업 (rework)
US20230146910A1 (en) 2021-11-11 2023-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Methods and compositions for improved patterning of photoresist
US20230152705A1 (en) 2021-11-17 2023-05-18 Tokyo Electron Limited UV Treatment of EUV Resists
TW202340858A (zh) 2021-12-13 2023-10-16 美商蘭姆研究公司 混合有機錫氧化物光阻的顯影
KR20250003664A (ko) 2022-05-04 2025-01-07 램 리써치 코포레이션 금속-함유 포토레지스트의 현상-후 처리

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015513540A (ja) * 2012-02-27 2015-05-14 インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation 電子ビーム、ディープuvおよび極短uvフォトレジスト用途の有機共配位子を含む金属ペルオキソ化合物
TW201734667A (zh) * 2016-03-18 2017-10-01 台灣積體電路製造股份有限公司 圖案化光阻層的方法
JP2018098229A (ja) * 2016-12-08 2018-06-21 東京エレクトロン株式会社 基板処理方法及び熱処理装置

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