KR102937721B1 - 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들 - Google Patents
금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들Info
- Publication number
- KR102937721B1 KR102937721B1 KR1020227003371A KR20227003371A KR102937721B1 KR 102937721 B1 KR102937721 B1 KR 102937721B1 KR 1020227003371 A KR1020227003371 A KR 1020227003371A KR 20227003371 A KR20227003371 A KR 20227003371A KR 102937721 B1 KR102937721 B1 KR 102937721B1
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist layer
- baking
- reactive gas
- substrate
- gas species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020257013740A KR20250060328A (ko) | 2019-06-28 | 2020-06-24 | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 전략들 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962868708P | 2019-06-28 | 2019-06-28 | |
| US62/868,708 | 2019-06-28 | ||
| PCT/US2020/070171 WO2020264556A1 (en) | 2019-06-28 | 2020-06-24 | Bake strategies to enhance lithographic performance of metal-containing resist |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257013740A Division KR20250060328A (ko) | 2019-06-28 | 2020-06-24 | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 전략들 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220031649A KR20220031649A (ko) | 2022-03-11 |
| KR102937721B1 true KR102937721B1 (ko) | 2026-03-12 |
Family
ID=74061345
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227003371A Active KR102937721B1 (ko) | 2019-06-28 | 2020-06-24 | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들 |
| KR1020257013740A Pending KR20250060328A (ko) | 2019-06-28 | 2020-06-24 | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 전략들 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257013740A Pending KR20250060328A (ko) | 2019-06-28 | 2020-06-24 | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 전략들 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US12601974B2 (https=) |
| EP (2) | EP4567518A3 (https=) |
| JP (2) | JP7589179B2 (https=) |
| KR (2) | KR102937721B1 (https=) |
| CN (1) | CN114026497A (https=) |
| TW (3) | TWI883015B (https=) |
| WO (1) | WO2020264556A1 (https=) |
Families Citing this family (27)
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| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| TWI884927B (zh) | 2018-10-17 | 2025-06-01 | 美商英培雅股份有限公司 | 圖案化有機金屬光阻及圖案化的方法 |
| KR102678588B1 (ko) | 2018-11-14 | 2024-06-27 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12416861B2 (en) | 2019-04-12 | 2025-09-16 | Inpria Corporation | Organometallic photoresist developer compositions and processing methods |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI910974B (zh) | 2019-06-26 | 2026-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR102937721B1 (ko) | 2019-06-28 | 2026-03-12 | 램 리써치 코포레이션 | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들 |
| CN114200776A (zh) | 2020-01-15 | 2022-03-18 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| EP4115242A4 (en) * | 2020-03-02 | 2024-03-13 | Inpria Corporation | PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS |
| WO2021202681A1 (en) | 2020-04-03 | 2021-10-07 | Lam Research Corporation | Pre-exposure photoresist curing to enhance euv lithographic performance |
| JP2023530299A (ja) | 2020-06-22 | 2023-07-14 | ラム リサーチ コーポレーション | 金属含有フォトレジスト堆積のための表面改質 |
| WO2022010809A1 (en) | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| WO2022103764A1 (en) | 2020-11-13 | 2022-05-19 | Lam Research Corporation | Process tool for dry removal of photoresist |
| US12577466B2 (en) | 2020-12-08 | 2026-03-17 | Lam Research Corporation | Photoresist development with organic vapor |
| JP7717793B2 (ja) * | 2021-04-01 | 2025-08-04 | Jsr株式会社 | 半導体基板の製造方法及びレジスト下層膜形成用組成物 |
| TWI891994B (zh) * | 2021-04-02 | 2025-08-01 | 美商蘭姆研究公司 | 來自含金屬光阻之金屬汙染物的控制 |
| US12204246B2 (en) * | 2021-06-08 | 2025-01-21 | Applied Materials, Inc. | Metal oxide resist patterning with electrical field guided post-exposure bake |
| CN113913926A (zh) * | 2021-10-22 | 2022-01-11 | 西安奕斯伟材料科技有限公司 | 外延反应腔室的恢复方法、外延生长装置及外延晶圆 |
| JP2023142946A (ja) * | 2022-03-25 | 2023-10-06 | 東京エレクトロン株式会社 | 基板処理方法、記憶媒体及び基板処理装置 |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| KR20250057876A (ko) * | 2022-09-09 | 2025-04-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Euv 리소그래피를 위한 진공 베이크 |
| CN115291481A (zh) * | 2022-10-09 | 2022-11-04 | 广州粤芯半导体技术有限公司 | 半导体工艺方法 |
| WO2024196643A1 (en) | 2023-03-17 | 2024-09-26 | Lam Research Corporation | Integration of dry development and etch processes for euv patterning in a single process chamber |
| KR20250034920A (ko) | 2023-07-27 | 2025-03-11 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
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| US20160116839A1 (en) * | 2014-10-23 | 2016-04-28 | Inpria Corporation | Organometallic solution based high resolution patterning compositions and corresponding methods |
| JP2018098229A (ja) * | 2016-12-08 | 2018-06-21 | 東京エレクトロン株式会社 | 基板処理方法及び熱処理装置 |
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| TW202115509A (zh) | 2021-04-16 |
| TW202546559A (zh) | 2025-12-01 |
| KR20220031649A (ko) | 2022-03-11 |
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