TWI495143B - 功率式表面安裝之發光晶粒封裝 - Google Patents

功率式表面安裝之發光晶粒封裝 Download PDF

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TWI495143B
TWI495143B TW100139852A TW100139852A TWI495143B TW I495143 B TWI495143 B TW I495143B TW 100139852 A TW100139852 A TW 100139852A TW 100139852 A TW100139852 A TW 100139852A TW I495143 B TWI495143 B TW I495143B
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substrate
package
reflector
light emitting
sealing body
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TW201210062A (en
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Peter S Andrews
Ban P Loh
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Cree Inc
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

功率式表面安裝之發光晶粒封裝
本發明係關於一種功率式表面安裝之發光晶粒封裝。
本發明係關於封裝半導體裝置領域，更特定言之，係關於封裝發光二極體。
發光二極體(LED)經常封裝於引線框封裝之內。引線框封裝通常包括一模製塑性體，其密封有一LED、一透鏡部分及連接至該LED並延伸至該塑性體之外之薄金屬引線。引線框封裝之金屬引線充當為LED提供電能之管道，且同時可吸取熱量遠離LED。當對LED施加能量以使其發光時LED將產生熱量。引線之一部分自封裝體向外延伸以連接至引線框封裝之外部的電路。
LED產生之部分熱量由塑性封裝體耗散；然而，大部分熱量經由封裝之金屬組件被吸取而遠離LED。金屬引線通常很薄且具有一小橫截面。因此，金屬引線自LED移除熱量之能力是有限的。此限制了可發送至LED之能量的量，藉此限制了LED可產生之光的量。
在LED封裝設計中，於LED封裝內金屬引線之下置放一散熱棒以增加LED封裝之散熱能力。該散熱棒增加了LED封裝之散熱能力；然而，散熱棒增加了LED封裝之尺寸、物質及成本。尺寸、物質及成本之增加非吾人所要。
在另一LED封裝設計中，引線框之引線(以不同形狀及組態)延伸至LED封裝體之緊接邊緣之外。此增加了引線部分曝露於周圍空氣之表面區域。經延伸之引線所增加之曝露表面區域亦使得LED封裝之散熱能力增加；然而，引線之延伸增加了LED封裝之尺寸、物質及成本。
當前引線框封裝設計之另一不良方面係關於與封裝之熱膨脹相關之問題。當熱量產生時，LED封裝會產生熱膨脹。LED封裝之每一部分具有不同之熱膨脹係數(CTE)。舉例而言，LED之CTE、封裝體之CTE、引線之CTE及透鏡之CTE皆互不相同。為此原因，當加熱時，每一此等部分產生之不同程度熱膨脹導致封裝之部分之間的機械應力，藉此不利地影響了封裝之可靠性。
因此，需要改良LED封裝以克服或減輕先前技術封裝之一或多個缺點。
本發明之實施例提供諸如發光二極體之半導體晶粒之封裝，該封裝包括：一基板，其具有可於安裝墊上連接至發光二極體之導電元件；一反射板，其耦合至基板且實質上環繞安裝墊；及透鏡，其實質上覆蓋安裝墊。
本發明之其它實施例提供包括一底部散熱片及一頂部散熱片之半導體晶粒封裝。該底部散熱片在其上表面上可具有跡線。半導體晶片可安裝至底部散熱片上表面之上並電連接至跡線。頂部散熱片可機械耦合至底部散熱片。
在其它實施例中，底部散熱片可包括一具有第一及第二表面之導熱導電板。該板可包含諸如銅、鋁或任一者之合金之金屬。薄的導熱絕緣薄膜形成於金屬板之第一表面之部分上或可形成於金屬板之其它表面上。
可於陶瓷/聚合薄膜上形成諸如金屬跡線及/或金屬引線之導電元件。由於陶瓷/聚合薄膜絕緣，導電跡線不會與金屬板電接觸。導電元件可形成或電連接至適用於接收諸如LED之電子裝置之安裝墊。
在某些實施例中，可形成穿過基板之一或多個通孔。在某些實施例中，通孔可在內部塗覆有諸如陶瓷/聚合薄膜之絕緣材料。可於通孔中形成諸如導電跡線之導電體以將基板之第一表面上之導電元件電連接至基板之第二表面上之導電元件。
根據本發明之實施例，基板亦可包括諸如基納(zener)二極體及/或一連接於一或多個導電元件之間的電阻網路之電子電路系統以實現靜電放電保護(ESD)及/或過電壓保護。
以下之詳細描述結合伴隨之圖式以實例方式說明了本發明之原則，由此將使本發明之其它態樣及優點變得顯而易見。
現參考圖1至圖10B來描述本發明，其說明了本發明之各種實施例。如圖式中之說明，誇示各層或區域之尺寸以達成說明之目的，且因此用以說明本發明之總體結構。此外，參考形成於基板或其它層或結構上之一層或結構來描述本發明之各種態樣。如將為熟習此項技術者所瞭解，對於形成於另一層或基板"上"的層的論述涵蓋了額外層可插入。本文中將對於形成於另一層或基板上而不含插入層的層的論述描述為"直接在"層或基板上形成。此外，如圖式中之說明，本文中使用諸如在下方之相關術語來描述一層或區域與另一層或區域之間的關係。應瞭解，此等術語意欲包括除圖中所描繪方位之外之設備的不同方位。舉例而言，若圖中之裝置"翻轉"，則描述為在其它層或區域"下方"之層或區域將被定向為在此等其它層或區域之"上方"。在此情形中術語"下方"意欲包括上方及下方。全文中類似數字表示類似元件。
如圖中為達成說明之目的所示，藉由發光晶粒封裝來舉例說明本發明之實施例，該封裝包括：一底部散熱片(基板)，其具有用以在安裝墊上連接至發光二極體之跡線；及一頂部散熱片(反射板)，其實質上環繞安裝墊。透鏡覆蓋安裝墊上有。實際上，根據本發明之某些實施例之晶粒封裝包含一兩部分散熱片，其中使用底部散熱片(除用於吸取及消散熱量之外)作為基板以在其上安裝及連接LED，且使用頂部散熱片(除用於吸取及消散熱量之外)作為反射板以引導由LED產生的光線。由於底部及頂部散熱片皆可使LED散熱，更多電能可被傳遞至LED，且LED可藉此產生更多的光。
此外，在本發明中，晶粒封裝本身可充當自LED移除熱量並將其消散的散熱片。因此，本發明之LED晶粒封裝可不需要自封裝延伸出去之獨立的散熱棒或引線。因此，根據本發明之LED晶粒封裝比先前技術之晶粒封裝可更緊密、更可靠且製造成本更低。
圖1A為根據本發明之一實施例之半導體晶粒封裝10之透視圖，且圖1B為圖1A之半導體封裝之分解透視圖。參看圖1A及圖1B，本發明之發光晶粒封裝10包括一底部散熱片20、一頂部散熱片40及一透鏡50。
圖2A至圖2D更詳細地說明了底部散熱片20。圖2A、2B、2C及2D分別為圖1A之底部散熱片20之俯視圖、側視圖、前視圖及仰視圖。此外，除底部散熱片20之前視圖外，圖2C中亦展示了LED組件60。圖1B中亦說明了LED組件60。參看圖1A至圖2D，底部散熱片20為電跡線22及24，焊墊26、32及34以及LED組件60提供支撐。因此，亦將底部散熱片20稱為基板20。在圖中，僅代表性焊墊26、32及34標記有參考數字以避免混亂。可使用導電材料來製造跡線22及24以及焊墊26、32及34。此外，額外之跡線及連接可製造於基板20之頂面、側面或底面或分層於基板20之內。可使用已知之方法(例如通孔)將跡線22及24、焊墊26、32及34以及其它連接以任何組合彼此互連。
在某些實施例中，基板20可由例如氮化鋁(AlN)或氧化鋁(Al2 O3 )之具有高熱傳導率而電絕緣之材料來製得。在諸如如下結合圖7A至圖10B描述之實施例之其它實施例中，基板20可包含既導電又導熱之材料。在此等實施例中，可藉由基板之部分上形成之絕緣薄膜來使金屬引線或導電跡線22及24或兩者皆與基板相隔離，如下文中將詳細描述。基板20之尺寸可視應用及用於製造晶粒封裝10之方法而有很大的變化。舉例而言，在例示性實施例中，基板20之尺寸可介於零點幾毫米(mm)至幾十毫米之範圍內。雖然本發明並不限於特定尺寸，本發明之晶粒封裝10的具體實施例在圖中係說明為標示有尺寸。圖中展示之所有尺寸皆以毫米(用於長度、寬度、高度或半徑)及度數(用於角度)計，除了其它於圖中或本文之說明書中或兩者中另外所指示。
基板20具有一頂面21，該頂面21包括電跡線22及24。跡線22及24提供自焊墊(例如頂部焊墊26)至安裝墊28之電連接。頂部焊墊26可包含通常接近基板20側面之跡線22及24之部分。頂部焊墊26電連接至側面焊墊32。安裝墊28為安裝有LED組件60之頂面(包括跡線22之部分或跡線24之部分或兩者)之一部分。通常，安裝墊28實質上安置於接近頂面21之中心處。在本發明之替代性實施例中，可由其它半導體電路或晶片來置換LED組件60。
跡線22及24提供電子路徑以允許LED組件60電連接至焊墊26、32或34。因此，將某些跡線稱為第一跡線22而將其它跡線稱為第二跡線24。在例示性實施例中，安裝墊28包括第一跡線22及第二跡線24之部分。在例示性實施例中，將LED組件60置放於安裝墊28之第一跡線22部分上以藉此與第一跡線22相接觸。在例示性實施例中，LED組件60及第二跡線24之頂部經由接線62彼此連接。視LED組件60之構造及方位而定，第一跡線22可為LED組件60提供陽極(正極)連接且第二跡線24可為LED組件60提供陰極(負極)連接(或反之亦然)。
LED組件60可包括額外元件。舉例而言，在圖1B及圖2C中，LED組件60係說明為包括LED接線62、LED次組件64及發光二極體(LED)66。該LED次組件64在此項技術中已為吾人所知，為討論本發明之目的而在此說明，並不意欲限制本發明。在圖中，展示之LED組件60晶粒附著於基板20。在替代性實施例中，可組態安裝墊28以允許LED組件60之覆晶附著。此外，可於安裝墊28上安裝多個LED組件。在替代性實施例中，LED組件60可安裝於多條跡線之上。若使用覆晶技術更是如此。
跡線22及24之拓撲可與圖中所說明之拓撲有很大不同同時仍然保持在本發明範疇之內。在圖中，展示了三個獨立的陰極(負極)跡線24以說明可於安裝墊28上置放三個LED組件，每一組件連接至不同之陰極(負極)跡線；因此，三個LED組件可分別是可電控的。跡線22及24由諸如金、銀、錫或其它金屬之導電材料製得。跡線22及24可具有如圖說明之尺寸且視應用而定其厚度可為大約幾微米或幾十微米。舉例而言，跡線22及24可為15微米厚。圖1A及圖2A說明了方位標記27。即使在組裝晶粒封裝10之後亦可使用此等標記來辨識晶粒封裝10之正確方位。跡線22及24(如所說明)可自安裝墊28延伸至基板20之側面。
繼續參看圖1A至圖2D，基板20界定了半圓筒空間23及接近其側面之四分之一圓筒空間25。在圖中，僅代表性空間23及25標記有參考數字以避免混亂。當晶粒封裝10附著至印刷電路板(PCB)或晶粒封裝10為其一組件之另一設備(未圖示)時，半圓筒空間23及四分之一圓筒空間25為焊接提供空間以使其經由該等空間流動(flow-through)及在該等空間內凝固(solidify-in)。此外，在製造過程期間半圓筒空間23及四分之一圓筒空間25提供方便之花紋及折點。
可將基板20製成具有複數個相鄰部分之帶狀物之一個別部分，每一相鄰部分為一基板20。或者，可將基板20製成一陣列部分之一個別部分，該陣列具有相鄰部分之多個列及多個行。在此組態中，在製造過程期間可使用半圓筒空間23及四分之一圓筒空間25作為該帶狀物或陣列之把手。
此外，半圓筒空間23及四分之一圓筒空間25結合該等部分之間的切割槽或其它蝕刻輔助將每一個別基板與帶狀物或晶圓分開。可藉由通過使帶狀物或晶圓發生彎曲來將物理應力引至蝕刻線(穿過半圓筒空間23及四分之一圓筒空間25)從而實現分離。此等特徵簡化了製造過程，從而藉由免去在製造過程期間使用特別載體固定裝置來處理帶狀物或晶圓的需要來降低成本。此外，半圓筒空間23及四分之一圓筒空間25可充當通孔以連接頂部焊墊26、側面焊墊32及底部焊墊34。
基板20具有包括熱接觸墊36之底面29。可使用諸如金、銀、錫或包括(但不限於)稀有金屬之其它材料之高熱傳導率材料來製造熱接觸墊。
圖3說明了圖1A及圖1B之半導體封裝之部分的剖示側視圖。更特定言之，圖3說明了頂部散熱片40及透鏡50之剖示側視圖。參看圖1A、圖1B及圖3頂部散熱片40由諸如鋁、銅、陶瓷、塑膠、複合物或此等材料之組合之高熱傳導率材料製得。可使用高溫、高機械強度、介電材料來塗覆跡線22及24(中央晶粒附著區域除外)以密封跡線22及24並提供保護以免發生諸如刮痕、氧化之物理及環境損害。塗覆過程可為基板製造過程之一部分。使用外塗層亦使基板20與頂部散熱片40相隔離。接著，外塗層可由諸如熱介面材料之高溫黏著劑覆蓋，該熱介面材料可由結合基板20及頂部散熱片40之熱固性物(THERMOSET)製得。
頂部散熱片40可包括實質上環繞安裝於安裝墊28(圖2A及圖2C中)上之LED組件60之反射表面42。該反射表面42反射來自LED組件60之部分光，如樣本光射線63所說明。光之其它部分不經反射表面42反射，如樣本光射線61所說明。例示性光射線61及63並不意謂代表光學技術中通常使用之光跡線。頂部散熱片40較佳由可經抛光或鑄造或兩者皆可之材料製得以達成光的有效反射。或者，可使光學反射表面42或整個散熱片40上鍍敷或沈積諸如銀、鋁或能實現此目的之其它物質之高反射性材料以達成高反射率。因此，亦將頂部散熱片40稱為反射板40。若需要封裝10之熱性能及當需要封裝10之熱性能時，該反射板40可由具有高熱傳導率之材料製得。
在例示性實施例中，反射表面42係說明為相對於反射板之水平面成一定角度(例如45度)之一平面。本發明並不限於例示性實施例。舉例而言，反射性表面42可相對於反射板之水平面成不同角度。或者，反射板可為抛物線形或其它形狀。
反射板40包括突出部分44以支撐並耦合透鏡50。使用諸如(例如僅為)聚矽氧之密封材料46將LED組件60密封於(圖1A及圖1B中之)晶粒封裝10之內。密封材料46較佳為具有高光透射率及與透鏡50之折射率相匹配之折射率之高溫聚合物。
透鏡50由諸如(例如僅為)玻璃、石英、高溫塑膠或此等材料之組合之高光透射率材料製得。可置放透鏡50使其與密封材料46相接觸。因此，當晶粒封裝10被加熱並產生熱膨脹時藉由密封材料46可使透鏡50減震，使得可保護透鏡50免受晶粒封裝10之其它部分之熱膨脹產生之機械應力的影響。在某些實施例中，透鏡50界定了淺溝槽52，其可填充有光學化學物質，例如磷、諸如碳酸鈣之光擴散劑、諸如螢光材料之中心頻率位移材料或此等材料之組合。
圖4說明了晶粒封裝10耦合至外部散熱片70。參看圖4，可使用環氧樹脂、焊料或其它任何導熱黏著劑、導電黏著劑或既導熱又導電黏著劑74來將熱接觸墊36附著至外部散熱片70。外部散熱片70可為自晶粒封裝10吸取熱量之印刷電路板(PCB)或其它結構。外部散熱片可包括各種組態之電路元件(未圖示)或熱消散片72。
圖5至圖6D展示了本發明之具有某一替代組態之一實施例。此第二實施例之部分與圖1A至圖4中說明之第一實施例之相應部分相類似。為方便起見，圖5至圖6D中說明之與第一實施例部分相類似之第二實施例部分指定為相同之參考數字，類似而已改變之部分則指定為帶有字母"a"之相同參考數字，且不同部分指定為不同參考數字。
圖5為根據本發明其它實施例之LED晶粒封裝10a之剖示透視圖。參考圖5，本發明之發光晶粒封裝10a包括一底部散熱片(基板)20a、一頂部散熱片(反射板)40a及一透鏡50。
圖6A、6B、6C及6D分別提供圖5之基板20a之俯視圖、側視圖、前視圖及仰視圖。參看圖5至圖6D，在例示性實施例中，基板20a包括一正跡線22a及四條負跡線24a。此等跡線22a及24a之組態與圖2A中之跡線22及24之配置不同。基板20a包括凸緣31，其界定了閉鎖空間33以接收反射板40a之支腳35，藉此機械地將反射板40a與基板20a嚙合。
圖7A至圖10B說明了本發明之其它實施例。根據此等實施例，用於高功率發光裝置之基板包括具有第一及第二表面之導熱導電板。該板可包含諸如銅、鋁或任一者之合金之金屬。在金屬板第一表面上形成薄的、導熱絕緣薄膜。在某些實施例中，導熱絕緣材料包含陶瓷/聚合薄膜，諸如可自Chanhassen,MN,USA之Bergquist公司購得之熱包層薄膜(Thermal Clad film)。
可於陶瓷/聚合薄膜上形成諸如金屬跡線及/或金屬引線之導電元件。由於陶瓷/聚合薄膜絕緣，導電跡線不會與金屬板電接觸。導電元件可形成或電連接至適用於接收電子裝置之安裝墊。如上文中連接圖1-6中說明之實施例所討論，金屬跡線之拓撲可有很大的變化同時仍然保持在本發明之範疇之內。
可藉由例如焊接、熱音波結合或熱壓縮結合將LED組件結合至安裝墊。LED產生的熱至少部分可經由金屬板消散。由於基板本身可充當散熱片，可減少或免去將額外散熱片結合至該結構之需要。然而，可置放額外散熱片使之與金屬板熱連通，如此可更有效地吸取熱量遠離操作裝置。
在一實施例中，可形成一或多個通孔穿過絕緣薄膜及金屬板。該通孔可在內部塗覆有諸如陶瓷/聚合薄膜之絕緣材料。諸如導電跡線之導電體可形成於通孔中且可將基板之第一表面上之導電元件電連接至基板之第二表面上之導電元件。無需使用金屬引線即可將根據此實施例之基板安裝至諸如印刷電路板之表面上，此可導致機械性更強之封裝。
根據本發明之實施例之基板亦可包括諸如離散基納二極體及/或電阻網路之電子電路以實現靜電放電(ESD)及/或過電壓保護。
雖然未於圖7-10中說明，基板可進一步包括諸如半圓筒空間及四分之一圓筒空間、方位標記、側面結合墊、凸緣及如圖1-6中說明之其它特徵之特徵。
圖7A至圖10B中說明之實施例之部分與圖1至圖6D中說明之實施例之相應部分相類似。為方便起見，圖7A至圖10B中所說明之與第一實施例之部分相類似之實施例部分指定為相同之參考數字，類似而已改變之部分則指定為帶有字母"b"之相同參考數字，且不同部分指定為不同參考數字。
參看圖7A，說明了根據本發明之另一實施例之基板20b。圖7A及圖7B分別提供了基板20b之俯視圖及前視圖。此外，除基板20b之前視圖之外圖7B中還展示了LED組件60。基板20b包括具有第一表面51a及第二表面51b之導熱導電板51。板51可包含諸如銅、鋁或任一者之合金之金屬。在金屬板51之第一表面51a之至少部分上形成薄的、導熱絕緣薄膜48。在某些實施例中，導熱絕緣薄膜48包含陶瓷/聚合薄膜，諸如可自Chanhassen,MN,USA之Bergquist公司購得之熱包層薄膜。此外，可於板51之第二表面51b及側面上形成導熱絕緣薄膜49。
基板20b為諸如電跡線22及24之導電元件、焊墊26及LED組件60提供支撐。此外，可將額外跡線或連接製造於基板20b之頂面、側面或底面上，或分層於基板20b之內。可使用已知之方法(例如通孔)將跡線22及24、焊墊26及其它任何連接以任何組合形式彼此互連。
基板20b具有一頂面21b，該頂面21b包括電跡線22及24。跡線22及24提供自焊墊(例如頂部焊墊26)至安裝墊28之電連接。頂部焊墊26可包含通常接近基板20b側面之跡線22及24之部分。安裝墊28為安裝LED組件60之頂面(包括跡線22之部分或跡線24之部分或兩者)之一部分。通常，將安裝墊28實質上定位於接近頂面21b之中心處。在本發明之替代性實施例中，可由其它半導體電路或晶片來置換LED組件60。
跡線22及24之拓撲可與圖中說明之拓撲有很大的不同同時仍然保持於本發明之範疇之內。在圖中，僅展示了一條陰極(負極)及一條陽極(正極)跡線。然而，基板20b上可包括多條陰極或陽極跡線以方便安裝墊28上之複數個LED組件之安裝，每一組件連接至不同陰極或陽極跡線；因此，三個LED組件可分別為可電控的。跡線22及24由諸如金、銀、錫或其它金屬之導電材料製得。
基板20b具有包括熱接觸墊36之底面29b。該熱接觸墊可使用諸如金、銀、錫或其它材料(包括但不限於稀有金屬)之高導熱性材料來製得。
圖7C說明了沿圖7A之截面線A-A所取之基板20b之部分的剖示前視圖。如圖7C中所示，可形成一或多個通孔45a、45b穿過基板20b。該等通孔45a、45b可在內部塗覆有諸如陶瓷/聚合薄膜之絕緣材料。諸如導電跡線47a、47b之導電體可形成於通孔中，且可將基板第一表面上之導電元件電連接至基板第二表面上之導電元件。如圖7C所說明，通孔45a中之導電跡線47a將基板20b上之第一側面21b或頂面21b上之跡線24連接至基板20b之第二側面29b或底面29b上之焊墊34。同樣地，延伸穿過通孔45b之導電跡線47b將導電跡線22連接至結合墊38。
無需使用金屬引線即可將根據此實施例之基板安裝於諸如印製電路板之表面上，此可導致機械性更強之封裝。
如上所述，可使用高溫、高機械強度、絕緣材料來塗覆跡線22及24(中央晶粒附著區域28除外)以密封跡線22及24，並為其提供保護以免受諸如刮痕、氧化之物理及環境損害。該塗覆過程可為基板製造過程之一部分。使用外塗層亦使跡線22及24與頂部散熱片40相隔離。接著，外塗層可由諸如熱介面材料之高溫黏著劑覆蓋，該熱介面材料可由結合基板20b及頂部散熱片40之熱固性物製得。
圖8及圖9中說明了未使用通孔之其它實施例。如圖8中所說明，導電跡線22及24可形成或附著至金屬引線39、41，該等金屬引線自封裝延伸出去或可直接安裝至電路板。在此實施例中，僅基板20b之第一表面21b可包括電絕緣導熱薄膜48。
圖9說明了一實施例，其中導電跡線22及24沿基板20b之側壁向下延伸以接觸基板20b之第二表面上之結合墊34及38。此組態可允許無需使用金屬引線或通孔而直接將封裝安裝至電路板。
如圖10A及圖10B中所說明，可組態基板20b以使其包括諸如離散基納二極體65、電阻網路67、其它電子元件或此等之任意組合之電子電路。可將此等電子電路連接於可作為陽極/或陰極元件操作之跡線22與24之間。該電子電路可用於多種目的，例如用以防止靜電放電(ESD)或過電壓保護或兩者皆可。在例示性實例中，如圖10B中說明之連接於跡線22與24之間的基納二極體D1 65可防止將過大負電壓施加至安裝於基板20b上之光電裝置。類似地，諸如印刷電阻S7之電阻網路67可為安裝於基板20上之裝置提供ESD保護。
如前所述，本發明之新穎及其優於當前技術之優點是顯而易見的。儘管上文描述及說明了本發明之特定實施例，本發明不限於所描述及說明部分之特定形式或配置。舉例而言，可使用不同組態、尺寸或材料來實施本發明。本發明受限於以下之申請專利範圍。下文中，為利用35 USC§112之"裝置項或方法項"("means or steps for")規定所起草之申請專利範圍係由短語"裝置+功能"("means for")來表現。
10．．．發光晶粒封裝
20．．．基板/底部散熱片
20a．．．基板
20b．．．基板
21．．．基板20之頂面
21b．．．基板20b之第一表面/頂面/側面
22．．．跡線
22a．．．正跡線
23．．．半圓筒空間
24．．．跡線
24a．．．負跡線
25．．．四分之一圓筒空間
26．．．焊墊
27．．．方位標記
28．．．安裝墊
29．．．基板20之底面
29b．．．基板20b之第二表面/底面/側面
31．．．凸緣
32．．．焊墊
33．．．閉鎖空間
34．．．結合墊/焊墊
35．．．支腳
36．．．熱接觸墊
38．．．結合墊
39．．．金屬引線
40．．．頂部散熱片/反射板
40a．．．頂部散熱片/反射板
41．．．金屬引線
42．．．光學反射表面
44．．．突出部分
45a．．．通孔
45b．．．通孔
47a．．．導電跡線
47b．．．導電跡線
48．．．薄膜
49．．．薄膜
50．．．透鏡
51．．．金屬板
51a．．．金屬板51之第一表面
51b．．．金屬板51之第二表面
52．．．淺溝槽
60．．．LED組件
62．．．LED結合接線
64．．．LED分組合件
66．．．發光二極體(LED)
65．．．離散基納二極體
67．．．電阻網路
70．．．外部散熱片
72．．．散熱片
74．．．黏著劑
S7．．．印刷電阻
圖1A為根據本發明之一實施例之半導體晶粒封裝的透視圖；
圖1B為圖1A之半導體封裝之分解透視圖；
圖2A為圖1A之半導體封裝之一部分的俯視圖；
圖2B為圖1A之半導體封裝之一部分的側視圖；
圖2C為圖1A之半導體封裝之一部分的前視圖；
圖2D為圖1A之半導體封裝之一部分的仰視圖；
圖3為圖1A之半導體封裝部分之剖示側視圖；
圖4為具有附加元件之圖1A之半導體封裝之側視圖；
圖5為根據本發明之另一實施例之半導體晶粒封裝之分解透視圖；
圖6A為圖5之半導體封裝之一部分的俯視圖；
圖6B為圖5之半導體封裝之一部分的側視圖；
圖6C為圖5之半導體封裝之一部分的前視圖；
圖6D為圖5之半導體封裝之一部分的仰視圖；
圖7A為根據本發明之另一實施例之半導體封裝之一部分的俯視圖；
圖7B為圖7A之半導體封裝之部分的前視圖；
圖7C為圖7A中沿線A-A所取之半導體封裝之部分的剖示前視圖；
圖8為根據本發明之另一實施例之半導體封裝之一部分的側視圖；
圖9為根據本發明之另一實施例之半導體封裝之一部分的側視圖；
圖10A為根據本發明之另一實施例之半導體封裝之一部分的俯視圖；
圖10B為根據本發明之另一實施例之半導體封裝之一部分的俯視圖。
10．．．發光晶粒封裝
20．．．基板/底部散熱片
40．．．頂部散熱片/反射板
42．．．光學反射表面
50．．．透鏡
60．．．LED組件

Claims (17)

  1. 一種發光晶粒封裝，包含：一基板，其具有一第一表面；一導熱電絕緣薄膜，其覆蓋該第一表面之至少一部分；在該絕緣薄膜上之複數個導電跡線，該等導電跡線係藉由該絕緣薄膜與該基板相絕緣；一發光二極體，其安裝於該基板上並連接至該等跡線；一密封體，其覆蓋該發光二極體；及一透鏡，其位於該密封體上並緊貼該密封體，且實質上覆蓋該發光二極體，該透鏡係經該密封體保護而免於受由該基板之熱膨脹所導致之機械力。
  2. 如請求項1之發光晶粒封裝，其中該透鏡僅與該密封體接觸。
  3. 如請求項1之發光晶粒封裝，其中該密封體係由一光學清晰聚合物材料所組成。
  4. 如請求項1之發光晶粒封裝，其中該基板係一具有高熱傳導之電絕緣材料。
  5. 如請求項1之發光晶粒封裝，其中該發光二極體位於一安裝墊上，且至少一跡線自該安裝墊延伸至該基板之一側。
  6. 如請求項2之發光晶粒封裝，其進一步包含：一反射器，其耦合至該基板並實質上圍繞該安裝墊，該反射器 定義一反射表面。
  7. 如請求項6之發光晶粒封裝，其中該基板包含複數個凸緣，其沿著本身之至少一側與該反射器機械性地接合。
  8. 如請求項6之發光晶粒封裝，其中該反射器係由具高導熱性之一材料所組成。
  9. 如請求項6之發光晶粒封裝，其中該反射器包含複數個支腳，其與該基板機械地接合，用以增加熱傳導。
  10. 如請求項6之發光晶粒封裝，其中該反射器及該基板作為散熱板以消除該發光二極體所產生的熱。
  11. 一種發光晶粒封裝，包含：一基板，其具有一第一表面；一導熱電絕緣薄膜，其覆蓋該第一表面之至少一部分；在該絕緣薄膜上之複數個導電跡線，該等導電跡線用來連接該基板上之一發光二極體晶片；一密封體，其覆蓋該發光二極體晶片；及一透鏡，其覆蓋該發光二極體晶片並位於該密封體上且緊貼該密封體，當該密封體膨脹或收縮時，該透鏡係被該密封體減震。
  12. 如請求項11之發光晶粒封裝，其中該透鏡僅與該密封體接觸。
  13. 如請求項11之發光晶粒封裝，其中該密封體係由一光學清晰聚合物材料所組成。
  14. 如請求項11之發光晶粒封裝，其中該基板係一具有高熱 傳導之電絕緣材料。
  15. 如請求項11之發光晶粒封裝，其進一步包含：一反射器，其位於該基板上並具有一暴露該發光二極體晶片之圓形開口，該開口部分充滿將該發光二極體晶片密封於該封裝內之該密封體，該開口形成一位於該反射器內之圓形側壁，其終止於一複合層，其中該透鏡位於該密封體之一部分上，該密封體係形成於該複合層上，並相對於該反射器之圓形側壁自由的移動。
  16. 如請求項15之發光晶粒封裝，其中該基板及該反射器之各者具有一散熱板，其可在封裝操作期間將該發光二極體晶片產生之熱引出。
  17. 如請求項15之發光晶粒封裝，其中在該透鏡及該圓形側壁間提供一缺口，以允許該透鏡在該反射器內移動。
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