CN103682060B - 发光二极管灯源装置 - Google Patents
发光二极管灯源装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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Abstract
一种发光二极管灯源装置,包括发光二极管光源,该发光二极管光源包括一基板,间隔设置在该基板上的一第一电极与一第二电极,以及一发光二极管芯片和密封该发光二极管芯片的一封装体,该发光二极管芯片分别与该第一电极和第二电极电性连接,该发光二极管灯源装置还包括一设置在该发光二极管芯片正向出光路径上的反射层,该反射层接收到发光二极管光源发出的光线并将接收到的光线反射向发光二极管光源的侧向。
Description
技术领域
本发明涉及一种发光二极管灯源装置,尤其涉及一种可增加侧向发光强度的发光二极管灯源装置。
背景技术
发光二极管作为一种高效的发光源,具有环保、省电、寿命长等诸多特点已经被广泛的运用于各种领域。一般发光二极管的其出光角正中央的光线强度较强,周围的光线强度较弱。因此,使得发光二极管侧向的光强不足,从而在应用过程中具有局限性。
发明内容
鉴于此,本发明旨在提供一种增加侧向发光强度的发光二极管灯源装置。
一种发光二极管灯源装置,包括发光二极管光源,该发光二极管光源包括一基板,间隔设置在该基板上的一第一电极与一第二电极,以及一发光二极管芯片和密封该发光二极管芯片的一封装体,该发光二极管芯片分别与该第一电极和第二电极电性连接,该发光二极管灯源装置还包括一设置在该发光二极管芯片正向出光路径上的反射层,该反射层接收到发光二极管光源发出的光线并将接收到的光线反射向发光二极管光源的侧向。
本发明通过在发光二极管光源的正向出光路径上设置一反射层,通过反射层的反射特性将发光二极管光源正向的强度较强的光线导向发光二极管光源的侧边,如此,可增加发光二极管光源的侧向发光强度,并且制程简单。
附图说明
图1为本发明第一实施例提供的发光二极管灯源装置的结构示意图及光路示意图。
图2为本发明第二实施例提供的发光二极管灯源装置的结构示意图及光路示意图。
图3为本发明第三实施例提供的发光二极管灯源装置的结构示意图及光路示意图。
图4为本发明第四实施例提供的发光二极管灯源装置的结构示意图及光路示意图。
主要元件符号说明
发光二极管灯源装置 | 1、1a、1b、1c |
发光二极管光源 | 10 |
基板 | 11 |
发光二极管芯片 | 12 |
第一电极 | 13 |
第二电极 | 14 |
金属导线 | 15 |
封装体 | 16 |
反射层 | 20、20a、20b、20c |
底面 | 21 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
图1为本发明所提供的发光二极管灯源装置1的结构示意图。发光二极管灯源装置1包括发光二极管光源10和一位于发光二极管光源10正向出光路径上的反射层20。
发光二极管光源10包括一基板11,间隔设置在基板11上的一第一电极13与一第二电极14,一发光二极管芯片12,以及一密封发光二极管芯片12的封装体16。
发光二极管芯片12分别与第一电极13和第二电极14电性连接。第一电极13和第二电极14作为发光二极管光源10的电极以与外部电源,如电路板,连接而向发光二极管芯片12供电。于本实施例中,发光二极管芯片12贴附在第二电极14上,并通过金属导线15与第一电极13电性连接。当然,发光二极管芯片12也可以通过覆晶的方式分别与第一电极13和第二电极14形成电连接。
封装体16是由点胶的方式形成的,其将发光二极管芯片12收容于内,用以校正发光二极管芯片12的出光方向。封装体16由光学性能优越的透明材料一体成型,如PMMA或PC塑料。封装体16的顶部向下形成一凹陷,该凹陷与发光二极管芯片12对应。本实施例中,该凹陷呈倒立的圆锥形。
反射层20位于封装体16的凹陷内,且位于发光二极管芯片12的正向出光路径上,反射层20由具有高反射性的不透明材料制成,如金属等。反射层20呈片状,其具有一底面21,且底面21结合至该凹陷底部。本实施例中,底面21呈倒立的圆锥面,且反射层20的顶部呈空心状,当然,反射层20的顶部也可全部填充,从而与封装体16共同形成半球形表面。
具体实施时,封装体16在点胶完成后,在封装体16的顶部用反射层20的底部向下按压,从而使反射层20嵌入封装体16,再对封装体16进行固化处理即可,如此制程更为简单。
当发光二极管光源10发光时,其发出的光线入射至封装体16的内部之后,一部分光线射向发光二极管芯片12的正上方,另一部分光线射向发光二极管芯片12的侧向。射向发光二极管芯片12正上方的光线射向反射层20,在反射层20的底面21的反射作用下,将发光二极管光源10发出的朝向正上方的光线导向发光二极管光源10的侧边,如此,可增加发光二极管光源10的侧向发光强度,形成如蝙蝠翼形状的光场。
本发明通过在发光二极管光源10的正向出光路径上设置一反射层20,通过反射层20的反射特性将发光二极管光源10正向的强度较强的光线导向发光二极管光源10的侧边,如此,可增加发光二极管光源10的侧向发光强度,形成如蝙蝠翼形状的光场,并且制程简单。况且,反射层20直接结合于封装体16上,从而无需额外设置透镜等二次光学元件即可形成需要的蝙蝠翼形状的光场,有利于节约成本,减少发光二极管光源10的体积。
请参阅图2,发光二极管灯源装置1a反射层20a的底部也可呈朝向发光二极管芯片12凸出的圆弧面等其它形状;其次,请同时参阅图3和图4,反射层20b和20c也可呈片状内嵌入封装体16的内部,只要其底面可将入射其上的光线反射至发光二极管灯源装置的侧向即可。
可以理解地,为了简洁地显示出发光二极管光源10所发出的光线的路径及原理,图1并未示出发光二极管灯源装置1的其他结构,但是本发明中发光二极管灯源装置并不局限于仅包含有图1中所显示的结构,其还可以包括有反射杯等其它结构,且反射层20也可设在封装体16的外部,只要其在发光二极管光源10的正向出光路径上即可,在此不再赘述。
本发明的技术内容及技术特点已揭露如上,然而本领域技术人员仍可能基于本发明的教示及揭示而作出种种不背离本发明精神的替换及修饰。因此,本发明的保护范围应不限于实施例所揭示的内容,而应包括各种不背离本发明的替换及修饰,并为所附的权利要求所涵盖。
Claims (10)
1.一种发光二极管灯源装置,包括发光二极管光源,该发光二极管光源包括一基板,间隔设置在该基板上的一第一电极与一第二电极,以及一发光二极管芯片和密封该发光二极管芯片的一封装体,该发光二极管芯片分别与该第一电极和第二电极电性连接,其特征在于:该发光二极管灯源装置还包括设置在该发光二极管芯片正向出光路径上的一反射层,所述反射层是通过在所述封装体点胶完成之后,在外力作用下向下按压以嵌入所述封装体而形成的,该反射层接收到发光二极管光源发出的光线并将接收到的光线反射向发光二极管光源的侧向。
2.如权利要求1所述的发光二极管灯源装置,其特征在于:该反射层由高反射性的不透明材料制成。
3.如权利要求2所述的发光二极管灯源装置,其特征在于:该封装体的顶部向下形成一凹陷,该反射层设于该封装层的凹陷底部,该反射层具有一底面。
4.如权利要求3所述的发光二极管灯源装置,其特征在于:该底面呈倒立的圆锥面。
5.如权利要求4所述的发光二极管灯源装置,其特征在于:该反射层的顶部呈空心状。
6.如权利要求3所述的发光二极管灯源装置,其特征在于:该底面呈朝向该发光二极管芯片凸出的圆弧面。
7.如权利要求6所述的发光二极管灯源装置,其特征在于:该反射层的顶部呈空心状。
8.如权利要求2所述的发光二极管灯源装置,其特征在于:该反射层设于该封装层的内部,且该反射层具有一底面。
9.如权利要求8所述的发光二极管灯源装置,其特征在于:该底面呈倒立的圆锥面。
10.如权利要求8所述的发光二极管灯源装置,其特征在于:该底面呈朝向该发光二极管芯片凸出的圆弧面。
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CN201210338475.2A CN103682060B (zh) | 2012-09-14 | 2012-09-14 | 发光二极管灯源装置 |
TW101134043A TWI497770B (zh) | 2012-09-14 | 2012-09-17 | 發光二極體燈源裝置 |
US13/900,554 US20140077243A1 (en) | 2012-09-14 | 2013-05-23 | Light emitting diode light source device |
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CN201210338475.2A CN103682060B (zh) | 2012-09-14 | 2012-09-14 | 发光二极管灯源装置 |
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CN103682060B true CN103682060B (zh) | 2016-09-21 |
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US (1) | US20140077243A1 (zh) |
CN (1) | CN103682060B (zh) |
TW (1) | TWI497770B (zh) |
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TWI705586B (zh) * | 2014-09-26 | 2020-09-21 | 晶元光電股份有限公司 | 發光裝置 |
CN105927924A (zh) * | 2016-05-04 | 2016-09-07 | 湖南工程学院 | 一种led灯具的连接及调光方法 |
CN105927927A (zh) * | 2016-05-04 | 2016-09-07 | 湖南工程学院 | 一种基于仿生学的led灯具 |
CN110379912B (zh) * | 2019-06-28 | 2021-06-22 | 佛山市国星光电股份有限公司 | Led器件、背光模组和显示装置 |
Citations (3)
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CN2588539Y (zh) * | 2002-11-12 | 2003-11-26 | 浙江天台天宇灯饰有限公司 | 贴片式发光二极管 |
CN1871710A (zh) * | 2003-10-22 | 2006-11-29 | 克立公司 | 采用电表面安装的发光晶片封装 |
TW201036201A (en) * | 2009-03-24 | 2010-10-01 | Silitek Electronic Guangzhou | Light emitting diode and backlight unit thereof |
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US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
US7118262B2 (en) * | 2004-07-23 | 2006-10-10 | Cree, Inc. | Reflective optical elements for semiconductor light emitting devices |
TW200717131A (en) * | 2005-08-19 | 2007-05-01 | Lg Chemical Ltd | Side emitting lens, light emitting device using the side emitting lens, mold assembly for preparing the side emitting lens and method for preparing the side emitting lens |
TW200826311A (en) * | 2006-12-04 | 2008-06-16 | Prolight Opto Technology Corp | Side emitting LED |
US9004724B2 (en) * | 2011-03-21 | 2015-04-14 | GE Lighting Solutions, LLC | Reflector (optics) used in LED deco lamp |
-
2012
- 2012-09-14 CN CN201210338475.2A patent/CN103682060B/zh active Active
- 2012-09-17 TW TW101134043A patent/TWI497770B/zh not_active IP Right Cessation
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- 2013-05-23 US US13/900,554 patent/US20140077243A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2588539Y (zh) * | 2002-11-12 | 2003-11-26 | 浙江天台天宇灯饰有限公司 | 贴片式发光二极管 |
CN1871710A (zh) * | 2003-10-22 | 2006-11-29 | 克立公司 | 采用电表面安装的发光晶片封装 |
TW201036201A (en) * | 2009-03-24 | 2010-10-01 | Silitek Electronic Guangzhou | Light emitting diode and backlight unit thereof |
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TW201411890A (zh) | 2014-03-16 |
US20140077243A1 (en) | 2014-03-20 |
TWI497770B (zh) | 2015-08-21 |
CN103682060A (zh) | 2014-03-26 |
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Effective date of registration: 20201109 Address after: Industrial Development Zone, Zhenze Town, Wujiang City, Suzhou City, Jiangsu Province Patentee after: Alice Educational Equipment Technology (Suzhou) Co.,Ltd. Address before: 518109, Shenzhen, Guangdong, Baoan District province Longhua Street tenth Pine Industrial Zone, No. two, East Ring Road, No. two Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Rongchuang Energy Technology Co.,Ltd. |
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