TWI497770B - 發光二極體燈源裝置 - Google Patents
發光二極體燈源裝置 Download PDFInfo
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- TWI497770B TWI497770B TW101134043A TW101134043A TWI497770B TW I497770 B TWI497770 B TW I497770B TW 101134043 A TW101134043 A TW 101134043A TW 101134043 A TW101134043 A TW 101134043A TW I497770 B TWI497770 B TW I497770B
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- 239000000758 substrate Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 240000003380 Passiflora rubra Species 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
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- 238000002310 reflectometry Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Description
本發明涉及一種發光二極體燈源裝置,尤其涉及一種可增加側向發光強度的發光二極體燈源裝置。
發光二極體作為一種高效的發光源,具有環保、省電、壽命長等諸多特點已經被廣泛的運用於各種領域。一般發光二極體的其出光角正中央的光線強度較強,周圍的光線強度較弱。故,使得發光二極體側向的光強不足,從而在應用過程中具有局限性。
鑒於此,本發明旨在提供一種增加側向發光強度的發光二極體燈源裝置。
一種發光二極體燈源裝置,包括發光二極體光源,該發光二極體光源包括一基板,間隔設置在該基板上的一第一電極與一第二電極,以及一發光二極體晶片和密封該發光二極體晶片的一封裝體,該發光二極體晶片分別與該第一電極和第二電極電性連接,該發光二極體燈源裝置還包括一設置在該發光二極體晶片正向出光路徑上的反射層,該反射層接收到發光二極體光源發出的光線並將接收到的光線反射向發光二極體光源的側向,該反射層由高反射性的不透明材料製成,該反射層設於該封裝層的內部,且該反射層具有一底面。
本發明藉由在發光二極體光源的正向出光路徑上設置一反射層,藉由反射層的反射特性將發光二極體光源正向的強度較強的光線導向發光二極體光源的側邊,如此,可增加發光二極體光源的側向發光強度,並且制程簡單。
1、1a、1b、1c‧‧‧發光二極體燈源裝置
10‧‧‧發光二極體光源
11‧‧‧基板
12‧‧‧發光二極體晶片
13‧‧‧第一電極
14‧‧‧第二電極
15‧‧‧金屬導線
16‧‧‧封裝體
20、20a、20b、20c‧‧‧反射層
21‧‧‧底面
圖1為本發明第一實施例提供的發光二極體燈源裝置的結構示意圖及光路示意圖。
圖2為本發明第二實施例提供的發光二極體燈源裝置的結構示意圖及光路示意圖。
圖3為本發明第三實施例提供的發光二極體燈源裝置的結構示意圖及光路示意圖。
圖4為本發明第四實施例提供的發光二極體燈源裝置的結構示意圖及光路示意圖。
圖1為本發明所提供的發光二極體燈源裝置1的結構示意圖。發光二極體燈源裝置1包括發光二極體光源10和一位於發光二極體光源10正向出光路徑上的反射層20。
發光二極體光源10包括一基板11,間隔設置在基板11上的一第一電極13與一第二電極14,一發光二極體晶片12,以及一密封發光二極體晶片12的封裝體16。
發光二極體晶片12分別與第一電極13和第二電極14電性連接。第一電極13和第二電極14作為發光二極體光源10的電極以與外部電源,如電路板,連接而向發光二極體晶片12供電。於本實施例中
,發光二極體晶片12貼附在第二電極14上,並藉由金屬導線15與第一電極13電性連接。當然,發光二極體晶片12也可以藉由覆晶的方式分別與第一電極13和第二電極14形成電連接。
封裝體16是由點膠的方式形成的,其將發光二極體晶片12收容於內,用以校正發光二極體晶片12的出光方向。封裝體16由光學性能優越的透明材料一體成型,如PMMA或PC塑膠。封裝體16的頂部向下形成一凹陷,該凹陷與發光二極體晶片12對應。本實施例中,該凹陷呈倒立的圓錐形。
反射層20位於封裝體16的凹陷內,且位於發光二極體晶片12的正向出光路徑上,反射層20由具有高反射性的不透明材料製成,如金屬等。反射層20呈片狀,其具有一底面21,且底面21結合至該凹陷底部。本實施例中,底面21呈倒立的圓錐面,且反射層20的頂部呈空心狀,當然,反射層20的頂部也可全部填充,從而與封裝體16共同形成半球形表面。
具體實施時,封裝體16在點膠完成後,在封裝體16的頂部用反射層20的底部向下按壓,從而使反射層20嵌入封裝體16,再對封裝體16進行固化處理即可,如此制程更為簡單。
當發光二極體光源10發光時,其發出的光線入射至封裝體16的內部之後,一部分光線射向發光二極體晶片12的正上方,另一部分光線射向發光二極體晶片12的側向。射向發光二極體晶片12正上方的光線射向反射層20,在反射層20的底面21的反射作用下,將發光二極體光源10發出的朝向正上方的光線導向發光二極體光源10的側邊,如此,可增加發光二極體光源10的側向發光強度,形成如蝙蝠翼形狀的光場。
本發明藉由在發光二極體光源10的正向出光路徑上設置一反射層20,藉由反射層20的反射特性將發光二極體光源10正向的強度較強的光線導向發光二極體光源10的側邊,如此,可增加發光二極體光源10的側向發光強度,形成如蝙蝠翼形狀的光場,並且制程簡單。另,反射層20直接結合於封裝體16上,從而無需額外設置透鏡等二次光學元件即可形成需要的蝙蝠翼形狀的光場,有利於節約成本,減少發光二極體光源10的體積。
請參閱圖2,發光二極體燈源裝置1a反射層20a的底部也可呈朝向發光二極體晶片12凸出的圓弧面等其他形狀;其次,請同時參閱圖3和圖4,反射層20b和20c也可呈片狀內嵌入封裝體16的內部,只要其底面可將入射其上的光線反射至發光二極體燈源裝置的側向即可。
可以理解地,為了簡潔地顯示出發光二極體光源10所發出的光線的路徑及原理,圖1並未示出發光二極體燈源裝置1的其他結構,但是本發明中發光二極體燈源裝置並不局限於僅包含有圖1中所顯示的結構,其還可以包括有反射杯等其他結構,且反射層20也可設在封裝體16的外部,只要其在發光二極體光源10的正向出光路徑上即可,在此不再贅述。
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,在爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。
1‧‧‧發光二極體燈源裝置
10‧‧‧發光二極體光源
11‧‧‧基板
12‧‧‧發光二極體晶片
13‧‧‧第一電極
14‧‧‧第二電極
15‧‧‧金屬導線
16‧‧‧封裝體
20‧‧‧反射層
21‧‧‧底面
Claims (3)
- 一種發光二極體燈源裝置,包括發光二極體光源,該發光二極體光源包括一基板,間隔設置在該基板上的一第一電極與一第二電極,以及一發光二極體晶片和密封該發光二極體晶片的一封裝體,該發光二極體晶片分別與該第一電極和第二電極電性連接,其改良在於:該發光二極體燈源裝置還包括設置在該發光二極體晶片正向出光路徑上的一反射層,該反射層接收到發光二極體光源發出的光線並將接收到的光線反射向發光二極體光源的側向,該反射層由高反射性的不透明材料製成,該反射層設於該封裝層的內部,且該反射層具有一底面。
- 如申請專利範圍第1項所述的發光二極體燈源裝置,其中,該底面呈倒立的圓錐面。
- 如申請專利範圍第1項所述的發光二極體燈源裝置,其中,該底面呈朝向該發光二極體晶片凸出的圓弧面。
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CN201210338475.2A CN103682060B (zh) | 2012-09-14 | 2012-09-14 | 发光二极管灯源装置 |
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TW201411890A TW201411890A (zh) | 2014-03-16 |
TWI497770B true TWI497770B (zh) | 2015-08-21 |
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US (1) | US20140077243A1 (zh) |
CN (1) | CN103682060B (zh) |
TW (1) | TWI497770B (zh) |
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TWI705586B (zh) * | 2014-09-26 | 2020-09-21 | 晶元光電股份有限公司 | 發光裝置 |
CN105927924A (zh) * | 2016-05-04 | 2016-09-07 | 湖南工程学院 | 一种led灯具的连接及调光方法 |
CN105927927A (zh) * | 2016-05-04 | 2016-09-07 | 湖南工程学院 | 一种基于仿生学的led灯具 |
CN110379912B (zh) * | 2019-06-28 | 2021-06-22 | 佛山市国星光电股份有限公司 | Led器件、背光模组和显示装置 |
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US20070195534A1 (en) * | 2005-08-19 | 2007-08-23 | Ha Duk S | Side emitting lens, light emitting device using the side emitting lens, mold assembly for preparing the side emitting lens and method for preparing the side emitting lens |
TW201036201A (en) * | 2009-03-24 | 2010-10-01 | Silitek Electronic Guangzhou | Light emitting diode and backlight unit thereof |
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US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
CN2588539Y (zh) * | 2002-11-12 | 2003-11-26 | 浙江天台天宇灯饰有限公司 | 贴片式发光二极管 |
US7118262B2 (en) * | 2004-07-23 | 2006-10-10 | Cree, Inc. | Reflective optical elements for semiconductor light emitting devices |
TW200826311A (en) * | 2006-12-04 | 2008-06-16 | Prolight Opto Technology Corp | Side emitting LED |
US9004724B2 (en) * | 2011-03-21 | 2015-04-14 | GE Lighting Solutions, LLC | Reflector (optics) used in LED deco lamp |
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2012
- 2012-09-14 CN CN201210338475.2A patent/CN103682060B/zh active Active
- 2012-09-17 TW TW101134043A patent/TWI497770B/zh not_active IP Right Cessation
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- 2013-05-23 US US13/900,554 patent/US20140077243A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070195534A1 (en) * | 2005-08-19 | 2007-08-23 | Ha Duk S | Side emitting lens, light emitting device using the side emitting lens, mold assembly for preparing the side emitting lens and method for preparing the side emitting lens |
TW201036201A (en) * | 2009-03-24 | 2010-10-01 | Silitek Electronic Guangzhou | Light emitting diode and backlight unit thereof |
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CN103682060A (zh) | 2014-03-26 |
CN103682060B (zh) | 2016-09-21 |
TW201411890A (zh) | 2014-03-16 |
US20140077243A1 (en) | 2014-03-20 |
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