JP2007142413A - Ledパッケージ - Google Patents
Ledパッケージ Download PDFInfo
- Publication number
- JP2007142413A JP2007142413A JP2006307474A JP2006307474A JP2007142413A JP 2007142413 A JP2007142413 A JP 2007142413A JP 2006307474 A JP2006307474 A JP 2006307474A JP 2006307474 A JP2006307474 A JP 2006307474A JP 2007142413 A JP2007142413 A JP 2007142413A
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- JP
- Japan
- Prior art keywords
- light
- emitting chip
- light emitting
- led package
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
【解決手段】本発明は、電源印加時に光を発生させる発光チップと、上記発光チップとワイヤを介して電気的に連結され、上記発光チップが搭載するフレーム部と、上記フレーム部を固定し上記発光チップが配置されるキャビティを形成し、上部面に突出して形成される凸状突出部を設けるように成形されるモールド部と、上記キャビティ内に投光性樹脂を埋め込んで上記凸状突出部の外枠を境界にして上記凸状突出部から上に膨らんだ円形ドーム状で具備されるレンズ部と、を含む。本発明によれば、発光チップから発生される光の指向角を十分確保しながら光抽出効率を増大させ、組立工程を単純化することで大量生産が可能で、かつ製造原価を節減することができる。
【選択図】図2
Description
115 ワイヤ
120 フレーム部
121 第1リードフレーム
122 第2リードフレーム
130 モールド部
135 凸状突出部
137 反射部材
140 レンズ部
H 形成高さ
Claims (8)
- 電源印加時に光を発生させる発光チップと、
前記発光チップとワイヤを介して電気的に連結され、前記発光チップが搭載するフレーム部と、
前記フレーム部を固定して前記発光チップが配置されるキャビティを形成し、上部面に突出して形成される凸状突出部を設けるように成形されるモールド部と、
前記キャビティ内に投光性樹脂を埋め込んで前記凸状突出部の外枠を境界にして前記凸状突出部から上に膨らんだ円形ドーム状で具備されるレンズ部と、を含むLEDパッケージ。 - 前記凸状突出部は内部面が前記キャビティの内部面から延長され、外部面は前記モールド部の上部面と直角を形成する円形リング状で具備されることを特徴とする、請求項1に記載のLEDパッケージ。
- 前記凸状突出部の内径中心は、前記キャビティ内に配置される発光チップと一致することを特徴とする、請求項2に記載のLEDパッケージ。
- 前記キャビティの内部面には、前記発光チップから発生される光を反射させることができるように反射部材をさらに含むことを特徴とする、請求項1に記載のLEDパッケージ。
- 前記レンズ部を構成する投光性樹脂には光散乱剤をさらに含むことを特徴とする、請求項1に記載のLEDパッケージ。
- 前記光散乱剤はエポキシ、シリコンのいずれか1種であることを特徴とする、請求項5に記載のLEDパッケージ。
- 前記光散乱剤は、チタン酸バリウム、酸化チタン(titanium oxide)、酸化アルミニウム(aluminium oxide)、酸化シリコン(silicone oxide)のいずれか1種であることを特徴とする、請求項5に記載のLEDパッケージ。
- 前記レンズ部の形成高さは、樹脂の流れ性に影響を与える粘度(Viscosity)及び樹脂の形状を維持するのに影響を与える揺変性数値(Thixotropic Index)によって調節されることを特徴とする、請求項1に記載のLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0108909 | 2005-11-15 | ||
KR1020050108909A KR100691440B1 (ko) | 2005-11-15 | 2005-11-15 | Led 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007142413A true JP2007142413A (ja) | 2007-06-07 |
JP5391468B2 JP5391468B2 (ja) | 2014-01-15 |
Family
ID=37719161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006307474A Expired - Fee Related JP5391468B2 (ja) | 2005-11-15 | 2006-11-14 | Ledパッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070108460A1 (ja) |
EP (1) | EP1786045A3 (ja) |
JP (1) | JP5391468B2 (ja) |
KR (1) | KR100691440B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11761592B2 (en) | 2018-08-06 | 2023-09-19 | Seoul Viosys Co., Ltd. | Light emitting apparatus and light radiator including the same |
JP7478134B2 (ja) | 2018-08-06 | 2024-05-02 | ソウル バイオシス カンパニー リミテッド | 発光装置、及びこれを含む光照射器 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202008005987U1 (de) * | 2008-04-30 | 2009-09-03 | Ledon Lighting Jennersdorf Gmbh | LED-Modul mit kalottenförmiger Farbkonversionsschicht |
US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
CN101577301B (zh) * | 2008-09-05 | 2011-12-21 | 佛山市国星光电股份有限公司 | 白光led的封装方法及使用该方法制作的led器件 |
KR100998017B1 (ko) | 2009-02-23 | 2010-12-03 | 삼성엘이디 주식회사 | 발광소자 패키지용 렌즈 및 이를 구비하는 발광소자 패키지 |
TWI411142B (zh) * | 2009-06-23 | 2013-10-01 | Delta Electronics Inc | 發光裝置及其封裝方法 |
KR101054983B1 (ko) * | 2010-03-29 | 2011-08-05 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 |
KR101853067B1 (ko) * | 2011-08-26 | 2018-04-27 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
DE102012200023B4 (de) * | 2012-01-02 | 2018-01-25 | Osram Oled Gmbh | Leuchte |
TWI506828B (zh) * | 2013-11-20 | 2015-11-01 | Lextar Electronics Corp | 發光裝置 |
CN106328642A (zh) * | 2016-10-18 | 2017-01-11 | 深圳成光兴光电技术股份有限公司 | 一种混合光源贴片led |
CN111696872A (zh) * | 2019-03-15 | 2020-09-22 | 致伸科技股份有限公司 | 半导体发光模块的封装方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0883869A (ja) * | 1994-09-09 | 1996-03-26 | Sony Corp | 半導体装置およびその製造方法 |
JPH0882714A (ja) * | 1994-09-12 | 1996-03-26 | Nitsusen Kagaku Kk | 面型照明装置 |
JPH11500584A (ja) * | 1996-09-20 | 1999-01-12 | シーメンス アクチエンゲゼルシヤフト | 波長変換する注型材料、その使用方法及びその製造方法 |
JP2000156528A (ja) * | 1998-11-19 | 2000-06-06 | Sharp Corp | 発光素子 |
JP2001085747A (ja) * | 1999-09-13 | 2001-03-30 | Sanken Electric Co Ltd | 半導体発光装置 |
JP2004095576A (ja) * | 2002-08-29 | 2004-03-25 | Toshiba Corp | 光半導体装置及び光半導体モジュール及び光半導体装置の製造方法 |
JP2005026503A (ja) * | 2003-07-03 | 2005-01-27 | Matsushita Electric Ind Co Ltd | 半導体発光装置およびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3895086B2 (ja) * | 1999-12-08 | 2007-03-22 | ローム株式会社 | チップ型半導体発光装置 |
JP2002314139A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
KR20020081990A (ko) * | 2001-04-21 | 2002-10-30 | 한국 고덴시 주식회사 | 온도보상 기능을 갖는 발광소자 |
JP4211359B2 (ja) * | 2002-03-06 | 2009-01-21 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
JP2005093712A (ja) * | 2003-09-17 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
-
2005
- 2005-11-15 KR KR1020050108909A patent/KR100691440B1/ko not_active IP Right Cessation
-
2006
- 2006-11-06 US US11/593,085 patent/US20070108460A1/en not_active Abandoned
- 2006-11-07 EP EP06255731A patent/EP1786045A3/en not_active Withdrawn
- 2006-11-14 JP JP2006307474A patent/JP5391468B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0883869A (ja) * | 1994-09-09 | 1996-03-26 | Sony Corp | 半導体装置およびその製造方法 |
JPH0882714A (ja) * | 1994-09-12 | 1996-03-26 | Nitsusen Kagaku Kk | 面型照明装置 |
JPH11500584A (ja) * | 1996-09-20 | 1999-01-12 | シーメンス アクチエンゲゼルシヤフト | 波長変換する注型材料、その使用方法及びその製造方法 |
JP2000156528A (ja) * | 1998-11-19 | 2000-06-06 | Sharp Corp | 発光素子 |
JP2001085747A (ja) * | 1999-09-13 | 2001-03-30 | Sanken Electric Co Ltd | 半導体発光装置 |
JP2004095576A (ja) * | 2002-08-29 | 2004-03-25 | Toshiba Corp | 光半導体装置及び光半導体モジュール及び光半導体装置の製造方法 |
JP2005026503A (ja) * | 2003-07-03 | 2005-01-27 | Matsushita Electric Ind Co Ltd | 半導体発光装置およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11761592B2 (en) | 2018-08-06 | 2023-09-19 | Seoul Viosys Co., Ltd. | Light emitting apparatus and light radiator including the same |
JP7478134B2 (ja) | 2018-08-06 | 2024-05-02 | ソウル バイオシス カンパニー リミテッド | 発光装置、及びこれを含む光照射器 |
Also Published As
Publication number | Publication date |
---|---|
EP1786045A3 (en) | 2012-08-29 |
EP1786045A2 (en) | 2007-05-16 |
KR100691440B1 (ko) | 2007-03-09 |
JP5391468B2 (ja) | 2014-01-15 |
US20070108460A1 (en) | 2007-05-17 |
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