TWI497770B - Led light source device - Google Patents

Led light source device Download PDF

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Publication number
TWI497770B
TWI497770B TW101134043A TW101134043A TWI497770B TW I497770 B TWI497770 B TW I497770B TW 101134043 A TW101134043 A TW 101134043A TW 101134043 A TW101134043 A TW 101134043A TW I497770 B TWI497770 B TW I497770B
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Taiwan
Prior art keywords
light
emitting diode
light source
reflective layer
electrode
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TW101134043A
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Chinese (zh)
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TW201411890A (en
Inventor
Chung Min Chang
Chien Chien Lin Chang
Hsuen Feng Hu
Chang Wen Sun
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Advanced Optoelectronic Tech
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Description

發光二極體燈源裝置 Light-emitting diode light source device

本發明涉及一種發光二極體燈源裝置，尤其涉及一種可增加側向發光強度的發光二極體燈源裝置。 The invention relates to a light-emitting diode light source device, in particular to a light-emitting diode light source device capable of increasing lateral luminous intensity.

發光二極體作為一種高效的發光源，具有環保、省電、壽命長等諸多特點已經被廣泛的運用於各種領域。一般發光二極體的其出光角正中央的光線強度較強，周圍的光線強度較弱。故，使得發光二極體側向的光強不足，從而在應用過程中具有局限性。 As a highly efficient light source, the light-emitting diode has been widely used in various fields due to its environmental protection, power saving and long life. Generally, the light intensity of the light-emitting diode in the center of the light exiting angle is strong, and the intensity of the surrounding light is weak. Therefore, the lateral light intensity of the light-emitting diode is insufficient, which has limitations in the application process.

鑒於此，本發明旨在提供一種增加側向發光強度的發光二極體燈源裝置。 In view of this, the present invention is directed to an LED light source device that increases lateral luminous intensity.

一種發光二極體燈源裝置，包括發光二極體光源，該發光二極體光源包括一基板，間隔設置在該基板上的一第一電極與一第二電極，以及一發光二極體晶片和密封該發光二極體晶片的一封裝體，該發光二極體晶片分別與該第一電極和第二電極電性連接，該發光二極體燈源裝置還包括一設置在該發光二極體晶片正向出光路徑上的反射層，該反射層接收到發光二極體光源發出的光線並將接收到的光線反射向發光二極體光源的側向，該反射層由高反射性的不透明材料製成，該反射層設於該封裝層的內部，且該反射層具有一底面。 A light emitting diode light source device includes a light emitting diode light source, the light emitting diode light source includes a substrate, a first electrode and a second electrode spaced apart from the substrate, and a light emitting diode chip And a package for sealing the LED chip, the LED body is electrically connected to the first electrode and the second electrode, and the LED device further includes a LED disposed on the LED The reflective layer on the forward direction of the body wafer, the reflective layer receiving the light emitted by the light emitting diode source and reflecting the received light toward the lateral direction of the light emitting diode source, the reflective layer being highly reflective opaque The material is made of a reflective layer disposed inside the encapsulation layer, and the reflective layer has a bottom surface.

本發明藉由在發光二極體光源的正向出光路徑上設置一反射層，藉由反射層的反射特性將發光二極體光源正向的強度較強的光線導向發光二極體光源的側邊，如此，可增加發光二極體光源的側向發光強度，並且制程簡單。 The invention provides a reflective layer on the forward light-emitting path of the light-emitting diode light source, and the light having stronger intensity in the forward direction of the light-emitting diode light source is guided to the side of the light-emitting diode light source by the reflection characteristic of the reflective layer. In this way, the lateral luminous intensity of the light-emitting diode light source can be increased, and the process is simple.

1、1a、1b、1c‧‧‧發光二極體燈源裝置 1, 1a, 1b, 1c‧‧‧Lighting diode source device

10‧‧‧發光二極體光源 10‧‧‧Lighting diode source

11‧‧‧基板 11‧‧‧Substrate

12‧‧‧發光二極體晶片 12‧‧‧Light Emitter Wafer

13‧‧‧第一電極 13‧‧‧First electrode

14‧‧‧第二電極 14‧‧‧second electrode

15‧‧‧金屬導線 15‧‧‧Metal wire

16‧‧‧封裝體 16‧‧‧Package

20、20a、20b、20c‧‧‧反射層 20, 20a, 20b, 20c‧‧‧ reflection layer

21‧‧‧底面 21‧‧‧ bottom

圖1為本發明第一實施例提供的發光二極體燈源裝置的結構示意圖及光路示意圖。 1 is a schematic structural view and an optical path diagram of a light-emitting diode light source device according to a first embodiment of the present invention.

圖2為本發明第二實施例提供的發光二極體燈源裝置的結構示意圖及光路示意圖。 2 is a schematic structural view and an optical path diagram of a light-emitting diode light source device according to a second embodiment of the present invention.

圖3為本發明第三實施例提供的發光二極體燈源裝置的結構示意圖及光路示意圖。 FIG. 3 is a schematic structural diagram and an optical path diagram of a light emitting diode light source device according to a third embodiment of the present invention.

圖4為本發明第四實施例提供的發光二極體燈源裝置的結構示意圖及光路示意圖。 4 is a schematic structural view and an optical path diagram of a light emitting diode light source device according to a fourth embodiment of the present invention.

圖1為本發明所提供的發光二極體燈源裝置1的結構示意圖。發光二極體燈源裝置1包括發光二極體光源10和一位於發光二極體光源10正向出光路徑上的反射層20。 FIG. 1 is a schematic structural view of a light-emitting diode lamp source device 1 according to the present invention. The light-emitting diode source device 1 includes a light-emitting diode light source 10 and a reflective layer 20 on the forward light-emitting path of the light-emitting diode light source 10.

發光二極體光源10包括一基板11，間隔設置在基板11上的一第一電極13與一第二電極14，一發光二極體晶片12，以及一密封發光二極體晶片12的封裝體16。 The light-emitting diode light source 10 includes a substrate 11 , a first electrode 13 and a second electrode 14 , a light-emitting diode chip 12 , and a package for sealing the LED chip 12 , which are spaced apart from each other on the substrate 11 . 16.

發光二極體晶片12分別與第一電極13和第二電極14電性連接。第一電極13和第二電極14作為發光二極體光源10的電極以與外部電源，如電路板，連接而向發光二極體晶片12供電。於本實施例中 ，發光二極體晶片12貼附在第二電極14上，並藉由金屬導線15與第一電極13電性連接。當然，發光二極體晶片12也可以藉由覆晶的方式分別與第一電極13和第二電極14形成電連接。 The LED chips 12 are electrically connected to the first electrode 13 and the second electrode 14, respectively. The first electrode 13 and the second electrode 14 serve as electrodes of the light-emitting diode source 10 to supply power to the LED chip 12 in connection with an external power source such as a circuit board. In this embodiment The LED chip 12 is attached to the second electrode 14 and electrically connected to the first electrode 13 by the metal wire 15. Of course, the LED wafer 12 can also be electrically connected to the first electrode 13 and the second electrode 14 by flip chip.

封裝體16是由點膠的方式形成的，其將發光二極體晶片12收容於內，用以校正發光二極體晶片12的出光方向。封裝體16由光學性能優越的透明材料一體成型，如PMMA或PC塑膠。封裝體16的頂部向下形成一凹陷，該凹陷與發光二極體晶片12對應。本實施例中，該凹陷呈倒立的圓錐形。 The package body 16 is formed by dispensing, and the light-emitting diode chip 12 is housed therein for correcting the light-emitting direction of the light-emitting diode wafer 12. The package body 16 is integrally formed of a transparent material having excellent optical properties such as PMMA or PC plastic. A recess is formed downwardly from the top of the package body 16, and the recess corresponds to the LED chip 12. In this embodiment, the recess has an inverted conical shape.

反射層20位於封裝體16的凹陷內，且位於發光二極體晶片12的正向出光路徑上，反射層20由具有高反射性的不透明材料製成，如金屬等。反射層20呈片狀，其具有一底面21，且底面21結合至該凹陷底部。本實施例中，底面21呈倒立的圓錐面，且反射層20的頂部呈空心狀，當然，反射層20的頂部也可全部填充，從而與封裝體16共同形成半球形表面。 The reflective layer 20 is located in the recess of the package body 16 and is located on the forward light-emitting path of the light-emitting diode wafer 12. The reflective layer 20 is made of an opaque material having high reflectivity, such as metal or the like. The reflective layer 20 is in the form of a sheet having a bottom surface 21 and the bottom surface 21 is bonded to the bottom of the recess. In this embodiment, the bottom surface 21 has an inverted conical surface, and the top of the reflective layer 20 has a hollow shape. Of course, the top of the reflective layer 20 may also be completely filled to form a hemispherical surface together with the package body 16.

具體實施時，封裝體16在點膠完成後，在封裝體16的頂部用反射層20的底部向下按壓，從而使反射層20嵌入封裝體16，再對封裝體16進行固化處理即可，如此制程更為簡單。 In a specific implementation, after the dispensing is completed, the package 16 is pressed down on the top of the package 16 with the bottom of the reflective layer 20, so that the reflective layer 20 is embedded in the package 16, and then the package 16 is cured. This process is much simpler.

當發光二極體光源10發光時，其發出的光線入射至封裝體16的內部之後，一部分光線射向發光二極體晶片12的正上方，另一部分光線射向發光二極體晶片12的側向。射向發光二極體晶片12正上方的光線射向反射層20，在反射層20的底面21的反射作用下，將發光二極體光源10發出的朝向正上方的光線導向發光二極體光源10的側邊，如此，可增加發光二極體光源10的側向發光強度，形成如蝙蝠翼形狀的光場。 When the light emitting diode 10 emits light, the emitted light is incident on the inside of the package 16, a part of the light is directed directly above the LED 12, and the other part of the light is directed to the side of the LED 12 to. The light directly incident on the light-emitting diode chip 12 is directed toward the reflective layer 20, and under the reflection of the bottom surface 21 of the reflective layer 20, the light directed upwardly from the light-emitting diode light source 10 is directed to the light-emitting diode light source. The side of 10, in this way, can increase the lateral luminous intensity of the light-emitting diode source 10 to form a light field such as a batwing shape.

本發明藉由在發光二極體光源10的正向出光路徑上設置一反射層20，藉由反射層20的反射特性將發光二極體光源10正向的強度較強的光線導向發光二極體光源10的側邊，如此，可增加發光二極體光源10的側向發光強度，形成如蝙蝠翼形狀的光場，並且制程簡單。另，反射層20直接結合於封裝體16上，從而無需額外設置透鏡等二次光學元件即可形成需要的蝙蝠翼形狀的光場，有利於節約成本，減少發光二極體光源10的體積。 In the present invention, a reflective layer 20 is disposed on the forward light-emitting path of the light-emitting diode light source 10, and the light having strong intensity in the forward direction of the light-emitting diode light source 10 is guided to the light-emitting diode by the reflection characteristic of the reflective layer 20. The side of the body light source 10, as such, can increase the lateral luminous intensity of the light-emitting diode source 10, form a light field such as a batwing shape, and the process is simple. In addition, the reflective layer 20 is directly bonded to the package body 16, so that a secondary batwing-shaped light field can be formed without additionally providing a secondary optical element such as a lens, which is advantageous in cost saving and reduces the volume of the light-emitting diode light source 10.

請參閱圖2，發光二極體燈源裝置1a反射層20a的底部也可呈朝向發光二極體晶片12凸出的圓弧面等其他形狀；其次，請同時參閱圖3和圖4，反射層20b和20c也可呈片狀內嵌入封裝體16的內部，只要其底面可將入射其上的光線反射至發光二極體燈源裝置的側向即可。 Referring to FIG. 2, the bottom of the reflective layer 20a of the LED light source device 1a may also have other shapes such as a circular arc surface protruding toward the LED wafer 12; secondly, please refer to FIG. 3 and FIG. The layers 20b and 20c may also be embedded in the interior of the package body 16 in a sheet shape as long as the bottom surface thereof reflects the light incident thereon to the lateral direction of the light emitting diode source device.

可以理解地，為了簡潔地顯示出發光二極體光源10所發出的光線的路徑及原理，圖1並未示出發光二極體燈源裝置1的其他結構，但是本發明中發光二極體燈源裝置並不局限於僅包含有圖1中所顯示的結構，其還可以包括有反射杯等其他結構，且反射層20也可設在封裝體16的外部，只要其在發光二極體光源10的正向出光路徑上即可，在此不再贅述。 It can be understood that, in order to succinctly show the path and principle of the light emitted by the LED source 10, FIG. 1 does not show other structures of the LED source device 1, but the LED source of the present invention The device is not limited to including only the structure shown in FIG. 1, and may further include other structures such as a reflective cup, and the reflective layer 20 may also be disposed outside the package 16 as long as it is in the light emitting diode source 10. The forward light path can be used, and will not be described here.

綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，舉凡熟悉本案技藝之人士，在爰依本發明精神所作之等效修飾或變化，皆應涵蓋於以下之申請專利範圍內。 In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. The above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art will be included in the following claims.

1‧‧‧發光二極體燈源裝置 1‧‧‧Lighting diode source device

10‧‧‧發光二極體光源 10‧‧‧Lighting diode source

11‧‧‧基板 11‧‧‧Substrate

12‧‧‧發光二極體晶片 12‧‧‧Light Emitter Wafer

13‧‧‧第一電極 13‧‧‧First electrode

14‧‧‧第二電極 14‧‧‧second electrode

15‧‧‧金屬導線 15‧‧‧Metal wire

16‧‧‧封裝體 16‧‧‧Package

20‧‧‧反射層 20‧‧‧reflective layer

21‧‧‧底面 21‧‧‧ bottom

Claims (3)

一種發光二極體燈源裝置，包括發光二極體光源，該發光二極體光源包括一基板，間隔設置在該基板上的一第一電極與一第二電極，以及一發光二極體晶片和密封該發光二極體晶片的一封裝體，該發光二極體晶片分別與該第一電極和第二電極電性連接，其改良在於：該發光二極體燈源裝置還包括設置在該發光二極體晶片正向出光路徑上的一反射層，該反射層接收到發光二極體光源發出的光線並將接收到的光線反射向發光二極體光源的側向，該反射層由高反射性的不透明材料製成，該反射層設於該封裝層的內部，且該反射層具有一底面。 A light emitting diode light source device includes a light emitting diode light source, the light emitting diode light source includes a substrate, a first electrode and a second electrode spaced apart from the substrate, and a light emitting diode chip And a package for sealing the LED chip, the LED body is electrically connected to the first electrode and the second electrode respectively, and the improvement is that the LED device further includes a reflective layer on the forward light-emitting path of the light-emitting diode chip, the reflective layer receiving the light emitted by the light-emitting diode light source and reflecting the received light toward the lateral direction of the light-emitting diode light source, the reflective layer being high The reflective opaque material is formed, the reflective layer is disposed inside the encapsulation layer, and the reflective layer has a bottom surface. 如申請專利範圍第1項所述的發光二極體燈源裝置，其中，該底面呈倒立的圓錐面。 The light-emitting diode light source device of claim 1, wherein the bottom surface has an inverted conical surface. 如申請專利範圍第1項所述的發光二極體燈源裝置，其中，該底面呈朝向該發光二極體晶片凸出的圓弧面。 The light-emitting diode light source device according to claim 1, wherein the bottom surface is a circular arc surface that protrudes toward the light-emitting diode wafer.
TW101134043A 2012-09-14 2012-09-17 Led light source device TWI497770B (en)

Applications Claiming Priority (1)

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CN201210338475.2A CN103682060B (en) 2012-09-14 2012-09-14 Light-emitting diode lamp source device

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CN105927924A (en) * 2016-05-04 2016-09-07 湖南工程学院 Connecting and dimming method of LED lamp
CN105927927A (en) * 2016-05-04 2016-09-07 湖南工程学院 LED lamp based on bionics
CN110379912B (en) 2019-06-28 2021-06-22 佛山市国星光电股份有限公司 LED device, backlight module and display device

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CN103682060A (en) 2014-03-26
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US20140077243A1 (en) 2014-03-20

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