CN101997076B - 发光二极管封装体 - Google Patents

发光二极管封装体 Download PDF

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CN101997076B
CN101997076B CN2010102560921A CN201010256092A CN101997076B CN 101997076 B CN101997076 B CN 101997076B CN 2010102560921 A CN2010102560921 A CN 2010102560921A CN 201010256092 A CN201010256092 A CN 201010256092A CN 101997076 B CN101997076 B CN 101997076B
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cavity
encapsulation body
led encapsulation
electrode pad
led
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CN101997076A (zh
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李进馥
朴熙锡
金亨根
李永镇
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Samsung Electronics Co Ltd
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Abstract

本发明提供了一种发光二极管封装体，所述发光二极管封装体包括：封装体模具，具有第一腔体和第二腔体，第二腔体的尺寸小于第一腔体的尺寸；第一电极焊盘和第二电极焊盘，分别设置在第一腔体和第二腔体的底表面上；LED芯片，安装在第一电极焊盘上；引线，用于提供LED芯片和第二电极焊盘之间的电连接；模制材料，填充在第一腔体和第二腔体内。

Description

发光二极管封装体
本申请要求于2009年8月18日在韩国知识产权局提交的第10-2009-0076407号韩国专利申请的权益，该申请的公开通过引用包含于此。
技术领域
本发明涉及一种发光二极管封装体，更具体地讲，涉及一种将安装有LED芯片的腔体的尺寸最小化以提高亮度的发光二极管封装体。
背景技术
发光二极管(LED)指的是半导体器件，它可以通过改变化合物半导体材料(如GaAs、AlGaAs、GaN、InGaInP等)形成发光源来实现各种颜色的光束。
通常，对LED产品性能的确定有影响的因素包括颜色、亮度、光转换效率等。主要地，由作为主要因素的LED中使用的化合物半导体材料以及作为次要因素的LED芯片安装的封装结构来确定LED产品的性能。
因此，为了开发满足用户要求的高亮度产品，由于仅通过类似材料开发的主要因素来开发期望的产品具有一定的局限性，所以大量的关注点聚集在封装体结构上。具体地讲，由于LED封装体的使用范围扩大为包括诸如室内/室外照明装置、LCD的背光单元、汽车的头灯等各种领域，所以要求LED封装体具有高亮度特性。
假定在光束具有相同的光通量的情况下，随着光源面积的减小，亮度增大，其中，亮度的单位用cd/mm2表示。因此，为了获得高亮度的LED，要求光源具有最小的尺寸。
现有技术中，通过将LED芯片安装到其上形成有腔体的封装模具中，执行引线键合，然后在腔体上涂覆光透射树脂来制造LED封装体。
然而，在现有技术的LED封装体中，由于LED芯片与引线一起位于腔体内，所以腔体尺寸的减小受到限制。在这种情况下，由于如果腔体的尺寸较大，则光学系统中感测的光源的实际尺寸变大。因此，问题在于亮度劣化。
发明内容
已经提出了本发明来克服上述问题，因此，本发明的目的在于提供这样一种发光二极管封装体，即，减小安装有LED芯片的腔体的尺寸，从而通过光源的减小来提高亮度。
根据本发明实现目标的一个方面，提供了一种发光二极管封装体，所述发光二极管封装体包括：封装体模具，具有第一腔体和第二腔体，第二腔体的尺寸小于第一腔体的尺寸；第一电极焊盘和第二电极焊盘，分别设置在第一腔体和第二腔体的底表面上；LED芯片，安装在第一电极焊盘上；引线，用于提供LED芯片和第二电极焊盘之间的电连接；模制材料，填充在第一腔体和第二腔体内。
这里，第一腔体和第二腔体形成为具有相同的深度。
另外，第二腔体形成为具有比第一腔体的深度小的深度。
另外，第一腔体和第二腔体相互接触。
另外，第一腔体和第二腔体被设置成彼此分隔开。
另外，发光二极管封装体还包括形成在第一腔体和第二腔体之间的封装体模具上的槽，从而第一腔体的顶部和第二腔体的顶部相互连通。
另外，槽的尺寸小于第二腔体的尺寸。
另外，槽被形成为具有比第一腔体的深度小的深度。
根据本发明实现目标的另一方面，提供了一种发光二极管封装体，所述发光二极管封装体包括：封装体模具，设置有第一腔体和多个第二腔体，第二腔体的尺寸小于第一腔体的尺寸；多个第一电极焊盘，设置成数量与第二腔体的数量相同并位于第一腔体的底表面上；第二电极焊盘，设置在第二腔体的底表面上；LED芯片，安装在每个第一电极焊盘上；引线，用于提供LED芯片和第二电极焊盘的电连接；模制材料，填充在第一腔体和第二腔体内。
这里，第一腔体和第二腔体形成为具有相同的深度。
另外，第二腔体形成为具有比第一腔体的深度小的深度。
另外，第一腔体和第二腔体相互接触。
另外，第一腔体和第二腔体被设置成彼此分隔开。
附图说明
通过下面结合附图对实施例进行的描述，本发明总体构思的这些和/或其它方面和优点将会变得清楚并更易于理解，其中：
图1是示出了根据本发明第一实施例的发光二极管封装体的结构的平面图；
图2是示出了图1中示出的发光二极管封装体的结构的剖视图；
图3是根据本发明第一实施例的变形示例的发光二极管封装体的剖视图；
图4是示出了根据本发明第二实施例的发光二极管封装体的结构的平面图；
图5是示出了图4中示出的发光二极管封装体的结构的剖视图；
图6是示出了根据本发明第三实施例的发光二极管封装体的结构的平面图；
图7是沿图6中的线I-I′截取的剖视图；
图8是沿图6中的线II-II′截取的剖视图；
图9是示出了根据本发明第四实施例的发光二极管封装体的结构的平面图；
图10是沿图9中的线III-III′截取的剖视图。
具体实施方式
将参照附图详细描述根据本发明的发光二极管封装体的实施例。当参照附图描述这些实施例时，用相同的标号表示相同或对应的组件，并将省略对它们的重复描述。
<第一实施例>
将参照图1至图3来详细描述根据本发明第一实施例的发光二极管封装体。
图1是示出了根据本发明第一实施例的发光二极管封装体的结构的平面图。图2是示出图1中示出的发光二极管封装体的剖视图。图3是示出根据本发明第一实施例的变形示例的发光二极管封装体的剖视图。
首先，如图1和图2所示，根据本发明第一实施例的发光二极管封装体100包括封装体模具110、第一电极焊盘120a和第二电极焊盘120b、LED芯片130和引线140。
封装体模具110在其中心上设置有第一腔体115a和第二腔体115b，其中，第二腔体115b的尺寸小于第一腔体115a的尺寸。第一电极焊盘120a和第二电极焊盘120b分别设置在第一腔体115a和第二腔体115b的底表面上。LED芯片130被安装在第一腔体115a的第一电极焊盘120a上。使用引线140来电连接LED芯片130和第二电极焊盘120b。
设置有由第一腔体115a和第二腔体115b构成的腔体115的封装体模具110可由塑性材料形成。可通过普通的预成型工艺等来实现封装体模具110的成型。
由第一电极焊盘120a和第二电极焊盘120b构成的一对电极焊盘120将电流提供给LED芯片130，并可由诸如Cu的导电材料形成。
当LED芯片130安装在第一电极焊盘120a上时，通常可使用GaN类的LED芯片。
引线140可由Au或Cu等形成。
第一腔体115a和第二腔体115b填充有模制材料150，从而保护LED芯片130和引线140。
根据将实现的LED芯片130的期望的颜色，模制材料150可由光透射树脂或包含磷光体的光透射树脂构成。
对于光透射树脂，可使用硅树脂或环氧树脂。
如上所述，模制材料150可由包含磷光体的光透射树脂形成，其中，磷光体的作用是吸收从LED芯片130产生并发射的特定波长的光并将吸收的光转换成不同波长的光。
可用与滴涂(dispensing)相同的方式将模制材料150填充在腔体115中。
这里，优选地，第一腔体115a形成为具有足以安装LED芯片130的最小尺寸。
并且优选地，尺寸小于第一腔体115a的第二腔体115b形成为具有足以形成键合到引线140的第二电极焊盘120b的最小尺寸。
在这种情况下，优选地，第一腔体115a和第二腔体115b相互接触，从而能够使引线140的长度最短，如图1所示。
根据本发明第一实施例的发光二极管封装体，通过将第一腔体115a形成为具有足以安装LED芯片130的最小尺寸，将容纳有键合到与LED芯片130电连接的引线140的第二电极焊盘120b的第二腔体115b形成为在与第一腔体115a相邻的位置处具有比第一腔体115a的尺寸小的尺寸，能够减小与LED光源的实际尺寸对应的整个腔体115的尺寸。
因此，根据本发明第一实施例的发光二极管封装体提供了通过将光源尺寸最小化来提高亮度的效果。
同时，尽管封装体模具110的第一腔体115a和第二腔体115b被形成为具有相同的深度，但是第二腔体115b的深度可小于第一腔体115a的深度，如根据图3中示出的本发明第一实施例的变形示例的发光二极管封装体的情况所示。
当第二腔体115b形成为具有比第一腔体115a的深度小的深度时，第二腔体115b的底表面位于比第一腔体115a的底表面高的位置处。
因此，本发明的发光二极管封装体的优点在于通过降低键合到设置在第二腔体115b的底表面上的第二电极焊盘120b的引线140的弯曲程度来防止引线140的损坏。
<第二实施例>
将参照图4和图5来详细描述根据本发明第二实施例的发光二极管封装体。除了第一实施例和第二实施例之间相同组件的描述之外，将描述第二实施例中与第一实施例中的组件不同的组件。
图4是出了根据本发明第二实施例的发光二极管封装体的结构的平面图。图5是示出了图4中示出的发光二极管封装体的结构的剖视图。
如图4和图5所示，根据本发明第二实施例的发光二极管封装体100的大部分组件与第一实施例中的组件相同，与第一实施例的发光二极管封装体的不同之处仅在于第一腔体115a被布置成与第二腔体115b分隔开。
在根据本发明第二实施例的发光二极管封装体100中，键合到引线140的第二电极焊盘120b以这样的方式形成，即，底表面上设置有第二电极焊盘120b的第二腔体115b与安装有LED芯片130的第一腔体115a分隔开，从而能够使光源的实际尺寸形成为第一腔体115a的尺寸。
即，根据本发明的第二实施例，当允许第二腔体115b不对光学特性有影响时，能够减小光源的实际尺寸。
<第三实施例>
将参照图6至图8来详细描述根据本发明第三实施例的发光二极管封装体。除了第三实施例和第二实施例之间相同组件的描述之外，将描述第三实施例中与第二实施例中的组件不同的组件。
图6是示出了根据本发明第三实施例的发光二极管封装体的结构的平面图。图7是沿图6中的线I-I′截取的剖视图。图8是沿图6中的线II-II′截取的剖视图。
如图6至图8所示，根据本发明第三实施例的发光二极管封装体的大部分组件与第二实施例的发光二极管封装体中的组件相同，与第二实施例的发光二极管封装体的不同之处仅在于在布置成彼此分隔开的第一腔体115a和第二腔体115b之间的封装体模具110上还额外设置了槽160，于是第一腔体115a和第二腔体115b的顶部相互连通。
在本发明的第三实施例中，槽160形成在第一腔体115a和第二腔体115b之间，从而能够防止位于第一腔体115a和第二腔体115b之间的引线140凸出到封装体模具110的顶部，如第二实施例的情况所示。
即，槽160的目的在于使第一腔体115a和第二腔体115b之间的引线140包括在封装体模具110内。槽160可以以比第一腔体115a的深度小的深度形成。
在这种情况下，优选地，槽160形成为具有比第二腔体115b的尺寸小的尺寸，从而使槽对光源的实际尺寸没有影响。即，槽160可形成为引线140可穿过槽160这样的最小尺寸。
槽的内部填充有模制材料150，像在第一腔体115a和第二腔体115b中的情况一样，从而能够保护引线140。
<第四实施例>
将参照图9和图10来详细描述根据本发明第四实施例的发光二极管封装体。除了第一实施例和第四实施例之间相同组件的描述之外，将描述第四实施例中与第一实施例中的组件不同的组件。
图9是示出了根据本发明第四实施例的发光二极管封装体的结构的平面图。图10是沿图9中的线III-III′截取的剖视图。
如图9和图10所示，根据本发明第四实施例的发光二极管封装体100的大部分组件与第一实施例的发光二极管封装体中的组件相同，与第一实施例的不同之处仅在于在与第一腔体115a相邻的部分处形成了多个第二腔体115b，具有与第二腔体115b的数量相同的数量的LED芯片被安装在第一腔体115a中。
即，根据本发明第四实施例的发光二极管封装体100包括封装体模具110、多个第一电极焊盘120a、多个第二电极焊盘120b、多个LED芯片130和多条引线140。封装体模具110设置有第一腔体115a和多个第二腔体115b，第二腔体115b的尺寸小于第一腔体115a的尺寸。第一电极焊盘120a形成为位于第一腔体115a的底表面上且数量与第二腔体115b的数量相同。第二电极焊盘120b形成在第二腔体115b的底表面上。LED芯片130安装在每个第一电极焊盘120a上。引线140用于将LED芯片130电连接到第二电极焊盘120b。
这里，尽管附图示出了第二腔体115b、LED芯片130和引线140全部形成为四个，但是这是为了示出的目的，并且本发明不限于此。
如上所述，尽管第一腔体115a和第二腔体115b可形成为具有彼此相同的深度，但是第二腔体115b可形成为具有比第一腔体115a的深度小的深度，以降低引线140的弯曲程度。
此外，第一腔体115a和第二腔体115b被布置为相互分隔开，或者相互接触。
第一腔体115a和第二腔体115b填充有模制材料150，从而能够保护LED芯片130和引线140。
根据本发明的第四实施例，通过减小布置有多个LED芯片130的发光二极管封装体100的光源的尺寸，能够提高亮度。
如上所述，根据本发明的发光二极管封装体，通过将第一腔体形成为具有足以安装LED芯片的最小尺寸，将容纳有键合到与LED芯片电连接的引线的第二电极焊盘的第二腔体形成为在与第一腔体相邻的位置处具有比第一腔体的尺寸小的尺寸，从而能够减小整个腔体的尺寸。
因此，本发明提供了一种能够通过减小应用于汽车头灯的LED光源的尺寸来提高亮度的效果。
如上所述，尽管已经示出和描述了本发明的优选实施例，但是本领域的技术人员应该理解，在不脱离本发明总体构思的原理和精神的情况下，可以对这些实施例做出替换、修改和改变，总体发明构思的范围由权利要求及其等同物限定。

Claims (9)

1.一种发光二极管封装体，所述发光二极管封装体包括：
封装体模具，具有第一腔体和第二腔体，第二腔体的尺寸小于第一腔体的尺寸；
第一电极焊盘和第二电极焊盘，分别设置在第一腔体和第二腔体的底表面上；
LED芯片，安装在第一电极焊盘上；
引线，用于提供LED芯片和第二电极焊盘之间的电连接；
模制材料，填充在第一腔体和第二腔体内，
其中，第二腔体形成为具有比第一腔体的深度小的深度。
2.根据权利要求1所述的发光二极管封装体，其中，第一腔体和第二腔体相互接触。
3.根据权利要求1所述的发光二极管封装体，其中，第一腔体和第二腔体被设置成彼此分隔开。
4.根据权利要求3所述的发光二极管封装体，还包括形成在第一腔体和第二腔体之间的封装体模具上的槽，从而第一腔体的顶部和第二腔体的顶部相互连通。
5.根据权利要求4所述的发光二极管封装体，其中，槽的尺寸小于第二腔体的尺寸。
6.根据权利要求4所述的发光二极管封装体，其中，槽被形成为具有比第一腔体的深度小的深度。
7.一种发光二极管封装体，所述发光二极管封装体包括：
封装体模具，设置有第一腔体和多个第二腔体，第二腔体的尺寸小于第一腔体的尺寸；
多个第一电极焊盘，设置成数量与第二腔体的数量相同并位于第一腔体的底表面上；
第二电极焊盘，设置在第二腔体的底表面上；
LED芯片，安装在每个第一电极焊盘上；
引线，用于提供LED芯片和第二电极焊盘的电连接；
模制材料，填充在第一腔体和第二腔体内，
其中，第二腔体形成为具有比第一腔体的深度小的深度。
8.根据权利要求7所述的发光二极管封装体，其中，第一腔体和第二腔体相互接触。
9.根据权利要求7所述的发光二极管封装体，其中，第一腔体和第二腔体被设置成彼此分隔开。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525213B2 (en) * 2010-03-30 2013-09-03 Lg Innotek Co., Ltd. Light emitting device having multiple cavities and light unit having the same
US9698563B2 (en) 2010-11-03 2017-07-04 3M Innovative Properties Company Flexible LED device and method of making
KR101852388B1 (ko) * 2011-04-28 2018-04-26 엘지이노텍 주식회사 발광 소자 패키지
KR101977831B1 (ko) * 2012-09-13 2019-05-13 엘지이노텍 주식회사 발광 소자 및 조명 시스템
KR102033928B1 (ko) * 2012-09-13 2019-10-18 엘지이노텍 주식회사 발광 소자 및 조명 시스템
US9991428B2 (en) * 2013-05-17 2018-06-05 Osram Opto Semiconductors Gmbh Optoelectronic component and method for the production thereof
KR102170218B1 (ko) 2014-08-05 2020-10-26 엘지이노텍 주식회사 발광소자 패키지
DE102016106134A1 (de) * 2016-04-04 2017-10-05 Vishay Semiconductor Gmbh Elektronische Einheit
US20220077353A1 (en) * 2020-09-08 2022-03-10 Tek Beng Low Light emitting diode package having a small light emitting surface

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7118931B2 (en) * 1998-09-04 2006-10-10 Gentex Corporation Radiation emitter device having an integral micro-groove lens
CN101488546A (zh) * 2007-10-31 2009-07-22 夏普株式会社 芯片部件式led及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2914097B2 (ja) * 1993-06-25 1999-06-28 松下電工株式会社 射出成形プリント基板
US6583444B2 (en) * 1997-02-18 2003-06-24 Tessera, Inc. Semiconductor packages having light-sensitive chips
JPH11121488A (ja) * 1997-10-15 1999-04-30 Toshiba Corp 半導体装置の製造方法及び樹脂封止装置
CA2350747C (en) * 2001-06-15 2005-08-16 Ibm Canada Limited-Ibm Canada Limitee Improved transfer molding of integrated circuit packages
WO2003030274A1 (fr) * 2001-09-27 2003-04-10 Nichia Corporation Dispositif emetteur de lumiere et procede de fabrication associe
JP4143340B2 (ja) * 2002-06-17 2008-09-03 日立マクセル株式会社 非接触通信式情報担体
KR100567559B1 (ko) * 2002-07-25 2006-04-05 마츠시다 덴코 가부시키가이샤 광전소자부품
JP2006019598A (ja) 2004-07-05 2006-01-19 Citizen Electronics Co Ltd 発光ダイオード
KR20070052636A (ko) * 2005-11-17 2007-05-22 설상진 방열 성능이 향상된 발광 다이오드 패키지 및 이를포함하는 발광 다이오드 어셈블리
KR100828891B1 (ko) * 2006-02-23 2008-05-09 엘지이노텍 주식회사 Ｌｅｄ 패키지
JP2008147203A (ja) * 2006-12-05 2008-06-26 Sanken Electric Co Ltd 半導体発光装置
KR100811723B1 (ko) * 2007-03-30 2008-03-11 서울반도체 주식회사 Ｌｅｄ 패키지
US7985980B2 (en) * 2007-10-31 2011-07-26 Sharp Kabushiki Kaisha Chip-type LED and method for manufacturing the same
US7923272B2 (en) * 2007-12-28 2011-04-12 Hwang-Pao Lee Method of forming a resin cover lens of LED assembly
TW200937667A (en) * 2008-02-20 2009-09-01 Advanced Optoelectronic Tech Package structure of chemical compound semiconductor device and fabricating method thereof
US20100181594A1 (en) * 2008-03-25 2010-07-22 Lin Charles W C Semiconductor chip assembly with post/base heat spreader and cavity over post

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7118931B2 (en) * 1998-09-04 2006-10-10 Gentex Corporation Radiation emitter device having an integral micro-groove lens
CN101488546A (zh) * 2007-10-31 2009-07-22 夏普株式会社 芯片部件式led及其制造方法

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