TWI476963B - 發光二極體封裝件 - Google Patents
發光二極體封裝件 Download PDFInfo
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- TWI476963B TWI476963B TW099126435A TW99126435A TWI476963B TW I476963 B TWI476963 B TW I476963B TW 099126435 A TW099126435 A TW 099126435A TW 99126435 A TW99126435 A TW 99126435A TW I476963 B TWI476963 B TW I476963B
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- cavity
- emitting diode
- light emitting
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- 239000012778 molding material Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description
本申請案主張於2009年8月18日向韓國智慧財產局提出申請的韓國專利申請案第2009-0076407號作為優先權,該案揭示之內容併入本案作為參考。
本發明係關於一種發光二極體封裝件;尤其是關於一種用於最小化配置發光二極體晶片用的模穴尺寸之發光二極體封裝件,藉以提升照度(luminance)。
發光二極體(LED)係指一種半導體裝置,其能藉由透過化合物半導體材料(例如砷化鎵(GaAs)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化銦鎵銦(InGaInP)等)的改變形成發光源,而達成多種顏色的光束。
一般而言,影響發光二極體產品之特性的決定因素,包含顏色、照度、光轉換效率等。最主要的是,發光二極體產品的特性係由發光二極體中使用的化合物半導體材料(為主要因素)以及用於發光二極體晶片的配置之封裝結構(為次要因素)決定。
因此,為了開發滿足使用者需要的高照度產品,已有許多努力付於研發封裝結構上,此係由於只透過如材料研發之主要因素來開發所欲產品有其限制。尤其是,當發光二極體封裝件的應用範圍擴展至包括譬如室內和室外照明裝置、液晶顯示器的背光單元、車輛的頭燈等多種領域時,
發光二極體封裝件需具有高照度特性。
照度(luminance)的單位係以cd/mm2
(燭光/平方毫米)表示;假設各光束具有相同的光通量,則其照度會隨著光源面積的減小而增強。因此,為了獲得高照度發光二極體,其光源需具有最小化的尺寸。
習知技術中的發光二極體封裝件係藉由下列步驟予以製造:配置發光二極體晶片至具有模穴之封裝模體(該模穴係形成於該封裝模體上)中、進行打線接合,以及塗覆透光樹脂於該模穴上。
然而,在習知的發光二極體封裝件中,由於發光二極體晶片與導線皆設於模穴內,因而限制模穴尺寸的減小。在此例中,由於模穴具有較大的尺寸時,在光學系統中所測得之光源的實際尺寸亦會變大,因此會有降低照度的問題。
本發明已用來解決先前技術之上述問題,因此本發明之目的係提供一種用於縮小配置有發光二極體晶片之模穴尺寸的發光二極體封裝件,使其可藉由光源的減少以提升照度。
根據達成該目的之一態樣,本發明提供一種發光二極體封裝件,其包括:具有第一模穴及第二模穴之封裝模體,該第二模穴具有小於該第一模穴的尺寸;分別設置於該第一模穴及該第二模穴的底部表面上之第一及第二電極墊;配置於該第一電極墊上之發光二極體晶片;用於提供該發
光二極體晶片與該第二電極墊間的電性連接之導線;以及填注於該第一模穴與該第二模穴內之模封材料。
此處,該第一模穴及該第二模穴係形成為具有相同深度。
且,該第二模穴係形成為具有小於該第一模穴的深度。
且,該第一模穴及該第二模穴彼此相互接觸。
且,該第一模穴及該第二模穴被設置成彼此互相分開。
且,該發光二極體封裝件復包含溝槽,形成於第一模穴及第二模穴之間的封裝模體上,以使該第一模穴的頂部與該第二模穴的頂部彼此相通。
且,該溝槽具有小於該第二模穴的尺寸。
且,該溝槽係形成為具有小於第一模穴的深度。
根據達成該目的之本發明之另一態樣,本發明提供一種發光二極體封裝件,包括:設有第一模穴以及複數個第二模穴之封裝模體,該複數個第二模穴具有小於該第一模穴的尺寸;設置成與位於第一模穴的底部表面上之第二模穴相同數量之複數個第一電極墊;設置於第二模穴的底部表面上之第二電極墊;配置於各個第一電極墊上之發光二極體晶片;用於提供該發光二極體晶片與該複數個第二電極墊之電性連接之導線;以及填注於該第一模穴及該第二模穴中之模封材料。
於此,第一模穴及第二模穴係形成為具有相同的深度。
且,該第二模穴係形成為具有小於第一模穴的深度。
且,該第一模穴及該第二模穴彼此相互接觸。
且,該第一模穴及該第二模穴被設置成彼此互相分開。
根據本發明之發光二極體封裝件的具體實施例將參考圖示予以說明。當參考圖示說明該等具體實施例時,相同或對應元件以相同之元件參考符號表示,其重複之說明將被省略。
根據本發明之第一實施例之發光二極體封裝件將參考第1至3圖予以詳細說明。
第1圖係根據本發明之第一實施例例示發光二極體封裝件的結構之平面圖。第2圖為顯示第1圖中所示之發光二極體封裝件之剖面圖。第3圖係根據本發明之第一實施例的修飾例例示發光二極體封裝件之剖面圖。
首先,如第1及2圖所示,根據本發明之第一實施例之發光二極體封裝件100包含封裝模體110、第一電極墊120a及第二電極墊120b、發光二極體晶片130,以及導線140。
封裝模體110形成有位於其中心上之第一模穴115a以及尺寸小於第一模穴115a之第二模穴115b。第一及第二電極墊120a及120b分別設置於第一模穴115a及第二模穴115b的底部表面上。發光二極體晶片130配置於第一模穴115a的第一電極墊120a上。導線140係用以作為模封部130與第二電極墊120b的電性連接。
該形成有第一及第二模穴115a、115b所構成之模穴
115之封裝模體110可以塑膠材料形成。封裝模體110的形成可由一般的預模封製程或類似的製法達成。
傳輸電流至發光二極體晶片130之成對的電極墊120係由第一電極墊120a及第二電極墊120b構成,電極墊120可由導電材料形成,例如銅。
配置於第一電極墊120a上的模封部130通常可使用GaN基發光二極體晶片。
導線140可由銀、銅或相似的材料形成。
將模封材料150填入第一模穴115a及第一模穴115b,以保護發光二極體晶片130及導線140。
根據預定實施之模封部130所需顏色,模封材料150可由透光樹脂或含磷光體之透光樹脂組成。
透光樹脂可使用矽氧樹脂或環氧樹脂。
如上述,模封材料150可由透光樹脂或含磷光體之透光樹脂組成,其中磷光體扮演吸收特定波長之從發光二極體晶片130所產生及發射的光並將所吸收的光轉換成不同波長的光的角色。
模封材料150可藉由與點膠(dispensing)製程相同概念的方式填注於模穴115中。
此處,較佳者,第一模穴115a係形成為具有足以配置發光二極體晶片130的最小尺寸。
而且,較佳者,該尺寸小於第一模穴115a之第二模穴115b係形成為具有足以形成接合至導線140之第二電極墊120b的最小尺寸。
於本實施例中,較佳者,第一模穴115a及第二模穴115b彼此互相接觸,使得導線140的長度可最小化,如第1圖所示。
根據本發明之第一實施例之發光二極體封裝件,該發光二極體封裝件能藉由將第一模穴115a形成為具有足以配置發光二極體晶片130的最小尺寸,以及將接合至電性連接發光二極體晶片130的導線140之第二模穴115b形成在鄰接第一模穴115a的位置且第二模穴115b係形成為具有小於第一模穴115a的尺寸,以減小對應於發光二極體光源實際尺寸的整體模穴115尺寸。
因此,根據本發明第一實施例之發光二極體封裝件,其藉由光源尺寸的最小化提供可改善照度之效果。
同時,雖然封裝模體110的第一模穴115a及第二模穴115b被製成具有相同深度,但第二模穴115b的深度可小於第一模穴115a的深度,例如第3圖所示之根據本發明之第一實施例的修飾例之發光二極體封裝件。
當第二模穴115b被製成為具有小於第一模穴115a的深度時,第二模穴115b的底部表面被設置在高於第一模穴115a之底部表面的位置。
因此,藉由減小接合至設置於第二模穴115b底部表面上的第二電極墊120b之導線140彎曲的幅度,本發明之發光二極體封裝件具有避免導線140受損之優點。
根據本發明之第二實施例之發光二極體封裝件將參考
第4及5圖予以闡述說明。除了第一實施例與第二實施例相同元件的說明之外,第二實施例不同於第一實施例的元件將予以說明。
第4圖為顯示根據本發明之第二實施例之發光二極體封裝件結構的平面圖。第5圖為顯示第4圖中所示之發光二極體封裝件之結構的剖面圖。
如第4及5圖所示,本發明之第二實施例之發光二極體封裝件包含大部份與第一實施例相同的元件,其與根據本發明之第一實施例之發光二極體封裝件不同之處只在於:第一模穴115a被設置成與第二模穴115b分開。
於根據本發明之第二實施例之發光二極體封裝件中,接合至導線140之第二電極墊120b係以下列方式製成:設置於發光二極體封裝件底部表面的第二模穴115b與其中配置有發光二極體晶片130的第一模穴115a分開,因此可將光源的實際尺寸製成為第一模穴115a的尺寸。
亦即,根據本發明之第二實施例,因為令第二模穴115b對光學特性不具有影響,所以能減小光源的實際尺寸。
根據本發明之第三實施例之發光二極體封裝件將參考第6至8圖予以詳細說明。除了第二及第三實施例之間相同元件的說明之外,第三實施例不同於第二實施例的元件將予以說明。
第6圖係根據本發明之第三實施例例示發光二極體封裝件的結構之平面圖。第7圖為沿第6圖的線段I-I’觀察
的剖面圖。第8圖為沿第6圖的線段II-II’觀察的剖面圖。
如第6及8圖所示,根據本發明之第三實施例之發光二極體封裝件包含與第二實施例之發光二極體封裝件大部份相同的元件,其與根據本發明之第二實施例之發光二極體封裝件不同之處只在於:額外地形成溝槽160於第一模穴115a及第二模穴115b之間的封裝模體110之上,該第一模穴115a及第二模穴115b以其頂部彼此相通的方式被設置為彼此相互分開。
於本發明之第三實施例中,溝槽160形成於第一模穴115a及第二模穴115b之間,藉以防止(如同第二實施例之一例)位於第一模穴115a及第二模穴115b之間的導線140突出至封裝模體110的頂部。
亦即,溝槽160之目的在於使第一模穴115a及第二模穴115b之間的導線140被包含在封裝模體110之中。溝槽160的深度可以形成為較第一模穴115a淺的深度。
於本例中,較佳者,溝槽160可被製成具有較第二模穴115b小的尺寸,因而使得溝槽160不影響光源的實際大小。換言之,溝槽160可被形成為導線140可穿過溝槽160之最小尺寸。
如同第一模穴115a及第二模穴115b之一例,以模封材料150充填於溝槽的內部,藉此能保護導線140。
根據本發明之第四實施例之發光二極體封裝件將參考第9及10圖予以詳細說明。除了第一及第四實施例之間相
同元件的說明之外,第四實施例的元件不同於第一實施例的元件將予以說明。
第9圖係根據本發明之第四實施例例示發光二極體封裝件的結構之平面圖。第10圖為沿第9圖的線段III-III’觀察的剖面圖。
如第9及10圖所示,根據本發明之第四實施例之發光二極體封裝件包含的元件大致與第一實施例的元件相同,其與根據本發明之第一實施例之發光二極體封裝件不同之處只在於:複數個第二模穴115b係形成部份鄰接於第一模穴115a,該具有與第二模穴115b相同數量之發光二極體晶片係配置於第一模穴115a中。
亦即,根據本發明之第四實施例之發光二極體封裝件包含封裝模體110、複數個第一電極墊120a、第二電極墊120b、發光二極體晶片130,以及導線140。封裝模體110設有第一模穴115a以及複數個具有小於第一模穴115a尺寸的第二模穴115b。第一電極墊120a的數量被形成與第二模穴115b的數量相同,該第一電極墊120a位於第一模穴115a的底部表面上。第二電極墊120b形成於第二模穴115b的底部表面上。發光二極體晶片130配置於各個第一電極墊120a之上。導線140用以電性連接發光二極體晶片130至第二電極墊120b。
此處,雖然圖示顯示所有的第二模穴115b、發光二極體晶片130以及導線140被製成4組,但此係為例示之目的,本發明並不限於此。
雖然上述第一模穴115a及第二模穴115b可被形成具有彼此相同的深度,但是第二模穴115b可被形成具有較第一模穴115a淺的深度,以減小導線彎曲的幅度。
而且,第一模穴115a及第二模穴115b可被設置成彼此互相分開,或彼此互相接觸。
將模封材料150填注於第一模穴115a以及第二模穴115b,藉以保護發光二極體晶片130以及導線140。
根據本發明之第四實施例,藉由縮小其上設有多個發光二極體晶片130之發光二極體封裝件100的光源尺寸,可改善其照度。
如上述,根據本發明之發光二極體封裝件,藉由將第一模穴製成具有足以配置發光二極體晶片的最小尺寸,以及將接合至電性連接發光二極體晶片的導線之第二模穴形成於鄰接第一模穴的位置且該第二模穴被形成為具有小於第一模穴的尺寸,以減小整體模穴尺寸。
因此,本發明之發光二極體晶片藉由將應用於車輛的頭燈之發光二極體光源尺寸縮小,提供可提升照度之效果。
如上述,雖然本發明之眾較佳實施例已經予以顯示以及闡述,但是熟習本技術領域者須了解:該等實施例可在不脫離廣義發明概念、申請專利範圍定義的範圍及其均等範圍的原則及精神下,加以置換、修改以及變化。
100‧‧‧發光二極體封裝件
110‧‧‧封裝模體
115‧‧‧模穴
115a‧‧‧第一模穴
115b‧‧‧第二模穴
120‧‧‧電極墊
120a‧‧‧第一電極墊
120b‧‧‧第二電極墊
130‧‧‧發光二極體晶片
140‧‧‧導線
150‧‧‧模封材料
160‧‧‧溝槽
本發明之以上與其它物件、特徵及其它優點在結合以下所附圖式之詳細說明將會清楚瞭解,其中:
第1圖係根據本發明之第一實施例例示發光二極體封裝件的結構之平面圖;第2圖為顯示第1圖中所示之發光二極體封裝件結構之剖面圖;第3圖係顯示根據本發明之第一實施例的修飾例例示之發光二極體封裝件之剖面圖;第4圖係根據本發明之第二實施例例示發光二極體封裝件結構的平面圖;第5圖為顯示第4圖中所示之發光二極體封裝件之結構的剖面圖;第6圖係根據本發明之第三實施例例示發光二極體封裝件的結構之平面圖;第7圖為沿第6圖的線段I-I'觀察的剖面圖;第8圖為沿第6圖的線段II-II'觀察的剖面圖;第9圖係根據本發明之第四實施例例示發光二極體封裝件的結構之平面圖;以及第10圖為沿第9圖的線段III-III'觀察的剖面圖。
100‧‧‧發光二極體封裝件
110‧‧‧封裝模體
115‧‧‧模穴
115a‧‧‧第一模穴
115b‧‧‧第二模穴
120‧‧‧電極墊
120a‧‧‧第一電極墊
120b‧‧‧第二電極墊
130‧‧‧發光二極體晶片
140‧‧‧導線
150‧‧‧模封材料
Claims (11)
- 一種發光二極體封裝件,包含:封裝模體,具有第一模穴及第二模穴,該第二模穴具有小於該第一模穴的尺寸;第一及第二電極墊,分別設置於該第一模穴及該第二模穴的底部表面上;發光二極體晶片,配置於該第一電極墊上;導線,用於提供該發光二極體晶片以及該第二電極墊之間的電性連接;以及模封材料,填注於該第一模穴及該第二模穴內,其中,該第一模穴及該第二模穴彼此相互接觸,該第一及第二電極墊配置於該封裝模體之朝向該模封材料的表面上。
- 如申請專利範圍第1項所述之發光二極體封裝件,其中,該第一模穴及該第二模穴係形成為具有相同的深度。
- 如申請專利範圍第1項所述之發光二極體封裝件,其中,該第二模穴係形成為具有小於該第一模穴的深度。
- 一種發光二極體封裝件,包含:封裝模體,具有第一模穴及第二模穴,該第二模穴具有小於該第一模穴的尺寸;第一及第二電極墊,分別設置於該第一模穴及該第二模穴的底部表面上;發光二極體晶片,配置於該第一電極墊上; 導線,用於提供該發光二極體晶片以及該第二電極墊之間的電性連接;以及模封材料,填注於該第一模穴及該第二模穴內,其中該第一模穴及該第二模穴係設置成彼此相互分開;以及其中,該封裝模體具有溝槽,位於該封裝模體的頂部,且位於該第一模穴及該第二模穴之間,以使該第一模穴的頂部及該第二模穴的頂部彼此相通,且該第一及第二電極墊配置於該封裝模體之朝向該模封材料的表面上。
- 如申請專利範圍第4項所述之發光二極體封裝件,其中,該溝槽具有小於該第二模穴的尺寸。
- 如申請專利範圍第4項所述之發光二極體封裝件,其中,該溝槽係形成為具有小於該第一模穴的深度。
- 一種發光二極體封裝件,包含:封裝模體,設有第一模穴以及複數個第二模穴,該複數個第二模穴具有小於該第一模穴的尺寸;複數個第一電極墊,設置成與該第二模穴的數量相同之數量,該第二模穴位於該第一模穴的底部表面上;第二電極墊,設置於該第二模穴的底部表面上;發光二極體晶片,配置於各個該第一電極墊上;導線,用於提供該發光二極體晶片以及該第二電極墊之電性連接;以及模封材料,填注於該第一模穴及該第二模穴之中。
- 如申請專利範圍第7項所述之發光二極體封裝件,其 中,該第一模穴及該第二模穴被製成具有相同深度。
- 如申請專利範圍第7項所述之發光二極體封裝件,其中,該第二模穴被製成具有小於該第一模穴的深度。
- 如申請專利範圍第7項所述之發光二極體封裝件,其中,該第一模穴及該第二模穴彼此相互接觸。
- 如申請專利範圍第7項所述之發光二極體封裝件,其中,該第一模穴及該第二模穴被設置成彼此相互分開。
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2010
- 2010-08-05 EP EP10171947.4A patent/EP2287931A3/en not_active Withdrawn
- 2010-08-09 TW TW099126435A patent/TWI476963B/zh active
- 2010-08-17 CN CN2010102560921A patent/CN101997076B/zh active Active
- 2010-08-17 JP JP2010182560A patent/JP2011040762A/ja active Pending
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Also Published As
Publication number | Publication date |
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CN101997076B (zh) | 2013-10-30 |
KR20110018777A (ko) | 2011-02-24 |
TW201117434A (en) | 2011-05-16 |
JP2011040762A (ja) | 2011-02-24 |
EP2287931A2 (en) | 2011-02-23 |
US20110042690A1 (en) | 2011-02-24 |
US8129741B2 (en) | 2012-03-06 |
CN101997076A (zh) | 2011-03-30 |
EP2287931A3 (en) | 2014-01-08 |
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