TWI392105B - 功率式表面安裝之發光晶粒封裝 - Google Patents
功率式表面安裝之發光晶粒封裝 Download PDFInfo
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- TWI392105B TWI392105B TW093131884A TW93131884A TWI392105B TW I392105 B TWI392105 B TW I392105B TW 093131884 A TW093131884 A TW 093131884A TW 93131884 A TW93131884 A TW 93131884A TW I392105 B TWI392105 B TW I392105B
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- 239000000758 substrate Substances 0.000 claims abstract description 117
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000003566 sealing material Substances 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 14
- 239000007888 film coating Substances 0.000 claims 2
- 238000009501 film coating Methods 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000012777 electrically insulating material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229920000034 Plastomer Polymers 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241000975394 Evechinus chloroticus Species 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 238000000429 assembly Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 polyoxymethylene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L33/52—Encapsulations
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- H01L33/64—Heat extraction or cooling elements
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本發明係關於一種功率式表面安裝之發光晶粒封裝。
本發明係關於封裝半導體裝置領域,更特定言之,係關於封裝發光二極體。
發光二極體(LED)經常封裝於引線框封裝之內。引線框封裝通常包括一模製塑性體,其密封有一LED、一透鏡部分及連接至該LED並延伸至該塑性體之外之薄金屬引線。引線框封裝之金屬引線充當為LED提供電能之管道,且同時可吸取熱量遠離LED。當對LED施加能量以使其發光時LED將產生熱量。引線之一部分自封裝體向外延伸以連接至引線框封裝之外部的電路。
LED產生之部分熱量由塑性封裝體耗散;然而,大部分熱量經由封裝之金屬組件被吸取而遠離LED。金屬引線通常很薄且具有一小橫截面。因此,金屬引線自LED移除熱量之能力是有限的。此限制了可發送至LED之能量的量,藉此限制了LED可產生之光的量。
在LED封裝設計中,於LED封裝內金屬引線之下置放一散熱棒以增加LED封裝之散熱能力。該散熱棒增加了LED封裝之散熱能力;然而,散熱棒增加了LED封裝之尺寸、物質及成本。尺寸、物質及成本之增加非吾人所要。
在另一LED封裝設計中,引線框之引線(以不同形狀及組態)延伸至LED封裝體之緊接邊緣之外。此增加了引線部分
曝露於周圍空氣之表面區域。經延伸之引線所增加之曝露表面區域亦使得LED封裝之散熱能力增加;然而,引線之延伸增加了LED封裝之尺寸、物質及成本。
當前引線框封裝設計之另一不良方面係關於與封裝之熱膨脹相關之問題。當熱量產生時,LED封裝會產生熱膨脹。LED封裝之每一部分具有不同之熱膨脹係數(CTE)。舉例而言,LED之CTE、封裝體之CTE、引線之CTE及透鏡之CTE皆互不相同。為此原因,當加熱時,每一此等部分產生之不同程度熱膨脹導致封裝之部分之間的機械應力,藉此不利地影響了封裝之可靠性。
因此,需要改良LED封裝以克服或減輕先前技術封裝之一或多個缺點。
本發明之實施例提供諸如發光二極體之半導體晶粒之封裝,該封裝包括:一基板,其具有可於安裝墊上連接至發光二極體之導電元件;一反射板,其耦合至基板且實質上環繞安裝墊;及透鏡,其實質上覆蓋安裝墊。
本發明之其它實施例提供包括一底部散熱片及一頂部散熱片之半導體晶粒封裝。該底部散熱片在其上表面上可具有跡線。半導體晶片可安裝至底部散熱片上表面之上並電連接至跡線。頂部散熱片可機械耦合至底部散熱片。
在其它實施例中,底部散熱片可包括一具有第一及第二表面之導熱導電板。該板可包含諸如銅、鋁或任一者之合金之金屬。薄的導熱絕緣薄膜形成於金屬板之第一表面之
部分上或可形成於金屬板之其它表面上。
可於陶瓷/聚合薄膜上形成諸如金屬跡線及/或金屬引線之導電元件。由於陶瓷/聚合薄膜絕緣,導電跡線不會與金屬板電接觸。導電元件可形成或電連接至適用於接收諸如LED之電子裝置之安裝墊。
在某些實施例中,可形成穿過基板之一或多個通孔。在某些實施例中,通孔可在內部塗覆有諸如陶瓷/聚合薄膜之絕緣材料。可於通孔中形成諸如導電跡線之導電體以將基板之第一表面上之導電元件電連接至基板之第二表面上之導電元件。
根據本發明之實施例,基板亦可包括諸如基納(zener)二極體及/或一連接於一或多個導電元件之間的電阻網路之電子電路系統以實現靜電放電保護(ESD)及/或過電壓保護。
以下之詳細描述結合伴隨之圖式以實例方式說明了本發明之原則,由此將使本發明之其它態樣及優點變得顯而易見。
現參考圖1至圖10B來描述本發明,其說明了本發明之各種實施例。如圖式中之說明,誇示各層或區域之尺寸以達成說明之目的,且因此用以說明本發明之總體結構。此外,參考形成於基板或其它層或結構上之一層或結構來描述本發明之各種態樣。如將為熟習此項技術者所瞭解,對於形成於另一層或基板"上"的層的論述涵蓋了額外層可插入。
本文中將對於形成於另一層或基板上而不含插入層的層的論述描述為"直接在"層或基板上形成。此外,如圖式中之說明,本文中使用諸如在下方之相關術語來描述一層或區域與另一層或區域之間的關係。應瞭解,此等術語意欲包括除圖中所描繪方位之外之設備的不同方位。舉例而言,若圖中之裝置"翻轉",則描述為在其它層或區域"下方"之層或區域將被定向為在此等其它層或區域之"上方"。在此情形中術語"下方"意欲包括上方及下方。全文中類似數字表示類似元件。
如圖中為達成說明之目的所示,藉由發光晶粒封裝來舉例說明本發明之實施例,該封裝包括:一底部散熱片(基板),其具有用以在安裝墊上連接至發光二極體之跡線;及一頂部散熱片(反射板),其實質上環繞安裝墊。透鏡覆蓋安裝墊上有。實際上,根據本發明之某些實施例之晶粒封裝包含一兩部分散熱片,其中使用底部散熱片(除用於吸取及消散熱量之外)作為基板以在其上安裝及連接LED,且使用頂部散熱片(除用於吸取及消散熱量之外)作為反射板以引導由LED產生的光線。由於底部及頂部散熱片皆可使LED散熱,更多電能可被傳遞至LED,且LED可藉此產生更多的光。
此外,在本發明中,晶粒封裝本身可充當自LED移除熱量並將其消散的散熱片。因此,本發明之LED晶粒封裝可不需要自封裝延伸出去之獨立的散熱棒或引線。因此,根據本發明之LED晶粒封裝比先前技術之晶粒封裝可更緊
密、更可靠且製造成本更低。
圖1A為根據本發明之一實施例之半導體晶粒封裝10之透視圖,且圖1B為圖1A之半導體封裝之分解透視圖。參看圖1A及圖1B,本發明之發光晶粒封裝10包括一底部散熱片20、一頂部散熱片40及一透鏡50。
圖2A至圖2D更詳細地說明了底部散熱片20。圖2A、2B、2C及2D分別為圖1A之底部散熱片20之俯視圖、側視圖、前視圖及仰視圖。此外,除底部散熱片20之前視圖外,圖2C中亦展示了LED組件60。圖1B中亦說明了LED組件60。參看圖1A至圖2D,底部散熱片20為電跡線22及24,焊墊26、32及34以及LED組件60提供支撐。因此,亦將底部散熱片20稱為基板20。在圖中,僅代表性焊墊26、32及34標記有參考數字以避免混亂。可使用導電材料來製造跡線22及24以及焊墊26、32及34。此外,額外之跡線及連接可製造於基板20之頂面、側面或底面或分層於基板20之內。可使用已知之方法(例如通孔)將跡線22及24、焊墊26、32及34以及其它連接以任何組合彼此互連。
在某些實施例中,基板20可由例如氮化鋁(AlN)或氧化鋁(Al2
O3
)之具有高熱傳導率而電絕緣之材料來製得。在諸如如下結合圖7A至圖10B描述之實施例之其它實施例中,基板20可包含既導電又導熱之材料。在此等實施例中,可藉由基板之部分上形成之絕緣薄膜來使金屬引線或導電跡線22及24或兩者皆與基板相隔離,如下文中將詳細描述。基板20之尺寸可視應用及用於製造晶粒封裝10之方法而有很
大的變化。舉例而言,在例示性實施例中,基板20之尺寸可介於零點幾毫米(mm)至幾十毫米之範圍內。雖然本發明並不限於特定尺寸,本發明之晶粒封裝10的具體實施例在圖中係說明為標示有尺寸。圖中展示之所有尺寸皆以毫米(用於長度、寬度、高度或半徑)及度數(用於角度)計,除了其它於圖中或本文之說明書中或兩者中另外所指示。
基板20具有一頂面21,該頂面21包括電跡線22及24。跡線22及24提供自焊墊(例如頂部焊墊26)至安裝墊28之電連接。頂部焊墊26可包含通常接近基板20側面之跡線22及24之部分。頂部焊墊26電連接至側面焊墊32。安裝墊28為安裝有LED組件60之頂面(包括跡線22之部分或跡線24之部分或兩者)之一部分。通常,安裝墊28實質上安置於接近頂面21之中心處。在本發明之替代性實施例中,可由其它半導體電路或晶片來置換LED組件60。
跡線22及24提供電子路徑以允許LED組件60電連接至焊墊26、32或34。因此,將某些跡線稱為第一跡線22而將其它跡線稱為第二跡線24。在例示性實施例中,安裝墊28包括第一跡線22及第二跡線24之部分。在例示性實施例中,將LED組件60置放於安裝墊28之第一跡線22部分上以藉此與第一跡線22相接觸。在例示性實施例中,LED組件60及第二跡線24之頂部經由接線62彼此連接。視LED組件60之構造及方位而定,第一跡線22可為LED組件60提供陽極(正極)連接且第二跡線24可為LED組件60提供陰極(負極)連接(或反之亦然)。
LED組件60可包括額外元件。舉例而言,在圖1B及圖2C中,LED組件60係說明為包括LED接線62、LED次組件64及發光二極體(LED)66。該LED次組件64在此項技術中已為吾人所知,為討論本發明之目的而在此說明,並不意欲限制本發明。在圖中,展示之LED組件60晶粒附著於基板20。在替代性實施例中,可組態安裝墊28以允許LED組件60之覆晶附著。此外,可於安裝墊28上安裝多個LED組件。在替代性實施例中,LED組件60可安裝於多條跡線之上。若使用覆晶技術更是如此。
跡線22及24之拓撲可與圖中所說明之拓撲有很大不同同時仍然保持在本發明範疇之內。在圖中,展示了三個獨立的陰極(負極)跡線24以說明可於安裝墊28上置放三個LED組件,每一組件連接至不同之陰極(負極)跡線;因此,三個LED組件可分別是可電控的。跡線22及24由諸如金、銀、錫或其它金屬之導電材料製得。跡線22及24可具有如圖說明之尺寸且視應用而定其厚度可為大約幾微米或幾十微米。舉例而言,跡線22及24可為15微米厚。圖1A及圖2A說明了方位標記27。即使在組裝晶粒封裝10之後亦可使用此等標記來辨識晶粒封裝10之正確方位。跡線22及24(如所說明)可自安裝墊28延伸至基板20之側面。
繼續參看圖1A至圖2D,基板20界定了半圓筒空間23及接近其側面之四分之一圓筒空間25。在圖中,僅代表性空間23及25標記有參考數字以避免混亂。當晶粒封裝10附著至印刷電路板(PCB)或晶粒封裝10為其一組件之另一設備(未
圖示)時,半圓筒空間23及四分之一圓筒空間25為焊接提供空間以使其經由該等空間流動(flow-through)及在該等空間內凝固(solidify-in)。此外,在製造過程期間半圓筒空間23及四分之一圓筒空間25提供方便之花紋及折點。
可將基板20製成具有複數個相鄰部分之帶狀物之一個別部分,每一相鄰部分為一基板20。或者,可將基板20製成一陣列部分之一個別部分,該陣列具有相鄰部分之多個列及多個行。在此組態中,在製造過程期間可使用半圓筒空間23及四分之一圓筒空間25作為該帶狀物或陣列之把手。
此外,半圓筒空間23及四分之一圓筒空間25結合該等部分之間的切割槽或其它蝕刻輔助將每一個別基板與帶狀物或晶圓分開。可藉由通過使帶狀物或晶圓發生彎曲來將物理應力引至蝕刻線(穿過半圓筒空間23及四分之一圓筒空間25)從而實現分離。此等特徵簡化了製造過程,從而藉由免去在製造過程期間使用特別載體固定裝置來處理帶狀物或晶圓的需要來降低成本。此外,半圓筒空間23及四分之一圓筒空間25可充當通孔以連接頂部焊墊26、側面焊墊32及底部焊墊34。
基板20具有包括熱接觸墊36之底面29。可使用諸如金、銀、錫或包括(但不限於)稀有金屬之其它材料之高熱傳導率材料來製造熱接觸墊。
圖3說明了圖1A及圖1B之半導體封裝之部分的剖示側視圖。更特定言之,圖3說明了頂部散熱片40及透鏡50之剖示側視圖。參看圖1A、圖1B及圖3頂部散熱片40由諸如鋁、
銅、陶瓷、塑膠、複合物或此等材料之組合之高熱傳導率材料製得。可使用高溫、高機械強度、介電材料來塗覆跡線22及24(中央晶粒附著區域除外)以密封跡線22及24並提供保護以免發生諸如刮痕、氧化之物理及環境損害。塗覆過程可為基板製造過程之一部分。使用外塗層亦使基板20與頂部散熱片40相隔離。接著,外塗層可由諸如熱介面材料之高溫黏著劑覆蓋,該熱介面材料可由結合基板20及頂部散熱片40之熱固性物(THERMOSET)製得。
頂部散熱片40可包括實質上環繞安裝於安裝墊28(圖2A及圖2C中)上之LED組件60之反射表面42。該反射表面42反射來自LED組件60之部分光,如樣本光射線63所說明。光之其它部分不經反射表面42反射,如樣本光射線61所說明。例示性光射線61及63並不意謂代表光學技術中通常使用之光跡線。頂部散熱片40較佳由可經抛光或鑄造或兩者皆可之材料製得以達成光的有效反射。或者,可使光學反射表面42或整個散熱片40上鍍敷或沈積諸如銀、鋁或能實現此目的之其它物質之高反射性材料以達成高反射率。因此,亦將頂部散熱片40稱為反射板40。若需要封裝10之熱性能及當需要封裝10之熱性能時,該反射板40可由具有高熱傳導率之材料製得。
在例示性實施例中,反射表面42係說明為相對於反射板之水平面成一定角度(例如45度)之一平面。本發明並不限於例示性實施例。舉例而言,反射性表面42可相對於反射板之水平面成不同角度。或者,反射板可為抛物線形或其它
形狀。
反射板40包括突出部分44以支撐並耦合透鏡50。使用諸如(例如僅為)聚矽氧之密封材料46將LED組件60密封於(圖1A及圖1B中之)晶粒封裝10之內。密封材料46較佳為具有高光透射率及與透鏡50之折射率相匹配之折射率之高溫聚合物。
透鏡50由諸如(例如僅為)玻璃、石英、高溫塑膠或此等材料之組合之高光透射率材料製得。可置放透鏡50使其與密封材料46相接觸。因此,當晶粒封裝10被加熱並產生熱膨脹時藉由密封材料46可使透鏡50減震,使得可保護透鏡50免受晶粒封裝10之其它部分之熱膨脹產生之機械應力的影響。在某些實施例中,透鏡50界定了淺溝槽52,其可填充有光學化學物質,例如磷、諸如碳酸鈣之光擴散劑、諸如螢光材料之中心頻率位移材料或此等材料之組合。
圖4說明了晶粒封裝10耦合至外部散熱片70。參看圖4,可使用環氧樹脂、焊料或其它任何導熱黏著劑、導電黏著劑或既導熱又導電黏著劑74來將熱接觸墊36附著至外部散熱片70。外部散熱片70可為自晶粒封裝10吸取熱量之印刷電路板(PCB)或其它結構。外部散熱片可包括各種組態之電路元件(未圖示)或熱消散片72。
圖5至圖6D展示了本發明之具有某一替代組態之一實施例。此第二實施例之部分與圖1A至圖4中說明之第一實施例之相應部分相類似。為方便起見,圖5至圖6D中說明之與第一實施例部分相類似之第二實施例部分指定為相同之參考
數字,類似而已改變之部分則指定為帶有字母"a"之相同參考數字,且不同部分指定為不同參考數字。
圖5為根據本發明其它實施例之LED晶粒封裝10a之剖示透視圖。參考圖5,本發明之發光晶粒封裝10a包括一底部散熱片(基板)20a、一頂部散熱片(反射板)40a及一透鏡50。
圖6A、6B、6C及6D分別提供圖5之基板20a之俯視圖、側視圖、前視圖及仰視圖。參看圖5至圖6D,在例示性實施例中,基板20a包括一正跡線22a及四條負跡線24a。此等跡線22a及24a之組態與圖2A中之跡線22及24之配置不同。基板20a包括凸緣31,其界定了閉鎖空間33以接收反射板40a之支腳35,藉此機械地將反射板40a與基板20a嚙合。
圖7A至圖10B說明了本發明之其它實施例。根據此等實施例,用於高功率發光裝置之基板包括具有第一及第二表面之導熱導電板。該板可包含諸如銅、鋁或任一者之合金之金屬。在金屬板第一表面上形成薄的、導熱絕緣薄膜。在某些實施例中,導熱絕緣材料包含陶瓷/聚合薄膜,諸如可自Chanhassen,MN,USA之Bergquist公司購得之熱包層薄膜(Thermal Clad film)。
可於陶瓷/聚合薄膜上形成諸如金屬跡線及/或金屬引線之導電元件。由於陶瓷/聚合薄膜絕緣,導電跡線不會與金屬板電接觸。導電元件可形成或電連接至適用於接收電子裝置之安裝墊。如上文中連接圖1-6中說明之實施例所討論,金屬跡線之拓撲可有很大的變化同時仍然保持在本發明之範疇之內。
可藉由例如焊接、熱音波結合或熱壓縮結合將LED組件結合至安裝墊。LED產生的熱至少部分可經由金屬板消散。由於基板本身可充當散熱片,可減少或免去將額外散熱片結合至該結構之需要。然而,可置放額外散熱片使之與金屬板熱連通,如此可更有效地吸取熱量遠離操作裝置。
在一實施例中,可形成一或多個通孔穿過絕緣薄膜及金屬板。該通孔可在內部塗覆有諸如陶瓷/聚合薄膜之絕緣材料。諸如導電跡線之導電體可形成於通孔中且可將基板之第一表面上之導電元件電連接至基板之第二表面上之導電元件。無需使用金屬引線即可將根據此實施例之基板安裝至諸如印刷電路板之表面上,此可導致機械性更強之封裝。
根據本發明之實施例之基板亦可包括諸如離散基納二極體及/或電阻網路之電子電路以實現靜電放電(ESD)及/或過電壓保護。
雖然未於圖7-10中說明,基板可進一步包括諸如半圓筒空間及四分之一圓筒空間、方位標記、側面結合墊、凸緣及如圖1-6中說明之其它特徵之特徵。
圖7A至圖10B中說明之實施例之部分與圖1至圖6D中說明之實施例之相應部分相類似。為方便起見,圖7A至圖10B中所說明之與第一實施例之部分相類似之實施例部分指定為相同之參考數字,類似而已改變之部分則指定為帶有字母"b"之相同參考數字,且不同部分指定為不同參考數字。
參看圖7A,說明了根據本發明之另一實施例之基板20b。圖7A及圖7B分別提供了基板20b之俯視圖及前視圖。此
外,除基板20b之前視圖之外圖7B中還展示了LED組件60。基板20b包括具有第一表面51a及第二表面51b之導熱導電板51。板51可包含諸如銅、鋁或任一者之合金之金屬。在金屬板51之第一表面51a之至少部分上形成薄的、導熱絕緣薄膜48。在某些實施例中,導熱絕緣薄膜48包含陶瓷/聚合薄膜,諸如可自Chanhassen,MN,USA之Bergquist公司購得之熱包層薄膜。此外,可於板51之第二表面51b及側面上形成導熱絕緣薄膜49。
基板20b為諸如電跡線22及24之導電元件、焊墊26及LED組件60提供支撐。此外,可將額外跡線或連接製造於基板20b之頂面、側面或底面上,或分層於基板20b之內。可使用已知之方法(例如通孔)將跡線22及24、焊墊26及其它任何連接以任何組合形式彼此互連。
基板20b具有一頂面21b,該頂面21b包括電跡線22及24。跡線22及24提供自焊墊(例如頂部焊墊26)至安裝墊28之電連接。頂部焊墊26可包含通常接近基板20b側面之跡線22及24之部分。安裝墊28為安裝LED組件60之頂面(包括跡線22之部分或跡線24之部分或兩者)之一部分。通常,將安裝墊28實質上定位於接近頂面21b之中心處。在本發明之替代性實施例中,可由其它半導體電路或晶片來置換LED組件60。
跡線22及24之拓撲可與圖中說明之拓撲有很大的不同同時仍然保持於本發明之範疇之內。在圖中,僅展示了一條陰極(負極)及一條陽極(正極)跡線。然而,基板20b上可包
括多條陰極或陽極跡線以方便安裝墊28上之複數個LED組件之安裝,每一組件連接至不同陰極或陽極跡線;因此,三個LED組件可分別為可電控的。跡線22及24由諸如金、銀、錫或其它金屬之導電材料製得。
基板20b具有包括熱接觸墊36之底面29b。該熱接觸墊可使用諸如金、銀、錫或其它材料(包括但不限於稀有金屬)之高導熱性材料來製得。
圖7C說明了沿圖7A之截面線A-A所取之基板20b之部分的剖示前視圖。如圖7C中所示,可形成一或多個通孔45a、45b穿過基板20b。該等通孔45a、45b可在內部塗覆有諸如陶瓷/聚合薄膜之絕緣材料。諸如導電跡線47a、47b之導電體可形成於通孔中,且可將基板第一表面上之導電元件電連接至基板第二表面上之導電元件。如圖7C所說明,通孔45a中之導電跡線47a將基板20b上之第一側面21b或頂面21b上之跡線24連接至基板20b之第二側面29b或底面29b上之焊墊34。同樣地,延伸穿過通孔45b之導電跡線47b將導電跡線22連接至結合墊38。
無需使用金屬引線即可將根據此實施例之基板安裝於諸如印製電路板之表面上,此可導致機械性更強之封裝。
如上所述,可使用高溫、高機械強度、絕緣材料來塗覆跡線22及24(中央晶粒附著區域28除外)以密封跡線22及24,並為其提供保護以免受諸如刮痕、氧化之物理及環境損害。該塗覆過程可為基板製造過程之一部分。使用外塗層亦使跡線22及24與頂部散熱片40相隔離。接著,外塗層
可由諸如熱介面材料之高溫黏著劑覆蓋,該熱介面材料可由結合基板20b及頂部散熱片40之熱固性物製得。
圖8及圖9中說明了未使用通孔之其它實施例。如圖8中所說明,導電跡線22及24可形成或附著至金屬引線39、41,該等金屬引線自封裝延伸出去或可直接安裝至電路板。在此實施例中,僅基板20b之第一表面21b可包括電絕緣導熱薄膜48。
圖9說明了一實施例,其中導電跡線22及24沿基板20b之側壁向下延伸以接觸基板20b之第二表面上之結合墊34及38。此組態可允許無需使用金屬引線或通孔而直接將封裝安裝至電路板。
如圖10A及圖10B中所說明,可組態基板20b以使其包括諸如離散基納二極體65、電阻網路67、其它電子元件或此等之任意組合之電子電路。可將此等電子電路連接於可作為陽極/或陰極元件操作之跡線22與24之間。該電子電路可用於多種目的,例如用以防止靜電放電(ESD)或過電壓保護或兩者皆可。在例示性實例中,如圖10B中說明之連接於跡線22與24之間的基納二極體Dl 65可防止將過大負電壓施加至安裝於基板20b上之光電裝置。類似地,諸如印刷電阻S7之電阻網路67可為安裝於基板20上之裝置提供ESD保護。
如前所述,本發明之新穎及其優於當前技術之優點是顯而易見的。儘管上文描述及說明了本發明之特定實施例,本發明不限於所描述及說明部分之特定形式或配置。舉例
而言,可使用不同組態、尺寸或材料來實施本發明。本發明受限於以下之申請專利範圍。下文中,為利用35 USC§112之"裝置項或方法項"("means or steps for")規定所起草之申請專利範圍係由短語"裝置+功能"("means for")來表現。
10‧‧‧發光晶粒封裝
20‧‧‧基板/底部散熱片
20a‧‧‧基板
20b‧‧‧基板
21‧‧‧基板20之頂面
21b‧‧‧基板20b之第一表面/頂面/側面
22‧‧‧跡線
22a‧‧‧正跡線
23‧‧‧半圓筒空間
24‧‧‧跡線
24a‧‧‧負跡線
25‧‧‧四分之一圓筒空間
26‧‧‧焊墊
27‧‧‧方位標記
28‧‧‧安裝墊
29‧‧‧基板20之底面
29b‧‧‧基板20b之第二表面/底面/側面
31‧‧‧凸緣
32‧‧‧焊墊
33‧‧‧閉鎖空間
34‧‧‧結合墊/焊墊
35‧‧‧支腳
36‧‧‧熱接觸墊
38‧‧‧結合墊
39‧‧‧金屬引線
40‧‧‧頂部散熱片/反射板
40a‧‧‧頂部散熱片/反射板
41‧‧‧金屬引線
42‧‧‧光學反射表面
44‧‧‧突出部分
45a‧‧‧通孔
45b‧‧‧通孔
47a‧‧‧導電跡線
47b‧‧‧導電跡線
48‧‧‧薄膜
49‧‧‧薄膜
50‧‧‧透鏡
51‧‧‧金屬板
51a‧‧‧金屬板51之第一表面
51b‧‧‧金屬板51之第二表面
52‧‧‧淺溝槽
60‧‧‧LED組件
62‧‧‧LED結合接線
64‧‧‧LED分組合件
66‧‧‧發光二極體(LED)
65‧‧‧離散基納二極體
67‧‧‧電阻網路
70‧‧‧外部散熱片
72‧‧‧散熱片
74‧‧‧黏著劑
S7‧‧‧印刷電阻
圖1A為根據本發明之一實施例之半導體晶粒封裝的透視圖;圖1B為圖1A之半導體封裝之分解透視圖;圖2A為圖1A之半導體封裝之一部分的俯視圖;圖2B為圖1A之半導體封裝之一部分的側視圖;圖2C為圖1A之半導體封裝之一部分的前視圖;圖2D為圖1A之半導體封裝之一部分的仰視圖;圖3為圖1A之半導體封裝部分之剖示側視圖;圖4為具有附加元件之圖1A之半導體封裝之側視圖;圖5為根據本發明之另一實施例之半導體晶粒封裝之分解透視圖;圖6A為圖5之半導體封裝之一部分的俯視圖;圖6B為圖5之半導體封裝之一部分的側視圖;圖6C為圖5之半導體封裝之一部分的前視圖;圖6D為圖5之半導體封裝之一部分的仰視圖;圖7A為根據本發明之另一實施例之半導體封裝之一部分的俯視圖;圖7B為圖7A之半導體封裝之部分的前視圖;圖7C為圖7A中沿線A-A所取之半導體封裝之部分的剖示
前視圖;圖8為根據本發明之另一實施例之半導體封裝之一部分的側視圖;圖9為根據本發明之另一實施例之半導體封裝之一部分的側視圖;圖10A為根據本發明之另一實施例之半導體封裝之一部分的俯視圖;圖10B為根據本發明之另一實施例之半導體封裝之一部分的俯視圖。
10‧‧‧發光晶粒封裝
20‧‧‧基板/底部散熱片
40‧‧‧頂部散熱片/反射板
42‧‧‧光學反射表面
50‧‧‧透鏡
60‧‧‧LED組件
Claims (24)
- 一種發光晶粒封裝,包含:一基板,其包含一導電且導熱之材料且具有一第一表面;一導熱電絕緣薄膜,其覆蓋該第一表面之至少一部分;一在該絕緣薄膜上之第一導電元件,該導電元件係藉由該絕緣薄膜與該基板相絕緣;一在該絕緣薄膜上之第二導電元件,該第二導電元件與該第一導電元件間隔分離且係藉由該絕緣薄膜與該基板電絕緣,其中該第一導電元件及該第二導電元件之中至少一個包含一安裝墊以供安裝一發光晶粒於其上;一反射器,其耦合至該基板並實質上環繞該安裝墊,且該反射器包含一複合層形成於其內;一密封材料,其用以密封該發光晶粒,該密封材料位於該反射器內之該安裝墊及該複合層上;及一透鏡,其實質上覆蓋該安裝墊,並安置於該反射器之該複合層上之該密封材料之上。
- 如請求項1之發光晶粒封裝,進一步包含一安裝於該基板之上並連接至該第一及該第二導電元件之發光二極體(LED)。
- 如請求項1之發光晶粒封裝,其中該第一及該第二導電元件包含金屬跡線。
- 如請求項1之發光晶粒封裝,其中該基板包含一金屬。
- 如請求項4之發光晶粒封裝,其中該基板包含選自由銅及 鋁組成之群中之一金屬。
- 如請求項4之發光晶粒封裝,其中該基板包含一銅/鋁合金。
- 如請求項1之發光晶粒封裝,其中該絕緣薄膜包含一陶瓷聚合薄膜。
- 如請求項1之發光晶粒封裝,其中該基板包含一與該第一表面相對之第二表面,且該發光晶粒封裝進一步包含至少一穿過該基板之通孔。
- 如請求項8之發光晶粒封裝,其中該通孔之該表面塗覆有一絕緣薄膜塗層。
- 如請求項9之發光晶粒封裝,其中該通孔包括一穿過其中之導電跡線,該導電跡線係藉由該絕緣薄膜塗層與該基板相絕緣,且該導電跡線與該第一及該第二導電引線中之一者電接觸。
- 如請求項8之發光晶粒封裝,其中該基板之該第二表面包括該第二表面之至少一部分上之一導熱絕緣薄膜,且其中該封裝進一步包含該第二表面上之一第三導電引線,該第三導電引線係藉由該導熱絕緣薄膜與該基板相絕緣,且該第三導電引線經由該通孔與該導電跡線電接觸。
- 如請求項1之發光晶粒封裝,進一步包含一耦合至該基板之外部散熱片。
- 如請求項15之發光晶粒封裝,其中該基板具有一鍍敷有金屬之底面以與該外部散熱片相耦合。
- 如請求項1之發光晶粒封裝,其中至少一導電元件自該安 裝墊延伸至該基板之一側面。
- 如請求項1之發光晶粒封裝,其中該反射器實質上環繞該安裝墊。
- 如請求項1之發光晶粒封裝,其中該反射器界定了一反射表面。
- 如請求項1之發光晶粒封裝,其中該反射器包含具有高熱傳導率之材料。
- 如請求項1之發光晶粒封裝,其中該反射器包含至少一機械地嚙合該基板之支腳以供增加的熱傳遞。
- 如請求項1之發光晶粒封裝,其中該透鏡包含頻率位移化合物。
- 如請求項1之發光晶粒封裝,其中該透鏡包含擴散劑。
- 如請求項1之發光晶粒封裝,其中該透鏡包含一磷光體。
- 一種發光晶粒封裝,包含一基板,其包含一導電且導熱之材料且具有一第一表面;一導熱電絕緣薄膜,其覆蓋該第一表面之至少一部分;一在該絕緣薄膜上之第一導電元件,該導電元件係藉由該絕緣薄膜與該基板相絕緣;一在該絕緣薄膜上之第二導電元件,該第二導電元件與該第一導電元件間隔分離且係藉由該絕緣薄膜與該基板電絕緣,其中該第一導電元件及該第二導電元件之中至少一個包含一安裝墊以供安裝一發光晶粒於其上;一反射器,其耦合至該基板並實質上環繞該安裝墊,該 基板沿著其至少一側面包含凸緣以供機械地嚙合該反射器;及一透鏡,其實質上覆蓋該安裝墊。
- 一種發光晶粒封裝,包含一基板,其包含一導電且導熱之材料且具有一第一表面;一導熱電絕緣薄膜,其覆蓋該第一表面之至少一部分;一在該絕緣薄膜上之第一導電元件,該導電元件係藉由該絕緣薄膜與該基板相絕緣;一在該絕緣薄膜上之第二導電元件,該第二導電元件與該第一導電元件間隔分離且係藉由該絕緣薄膜與該基板電絕緣,其中該第一導電元件及該第二導電元件之中至少一個包含一安裝墊以供安裝一發光晶粒於其上;一反射器,其耦合至該基板並實質上環繞該安裝墊;及一透鏡,其實質上覆蓋該安裝墊,該透鏡包含一適用於接收光學化學物質之溝槽。
- 一種發光晶粒封裝,其包含:一金屬基板,其具有一第一表面;一電絕緣薄膜,其覆蓋該第一基板之至少一部分;一在該絕緣薄膜上之第一導電跡線,該導電跡線係藉由該絕緣薄膜與該基板相絕緣;一用以安裝一發光裝置之安裝墊,該安裝墊電連接至該第一導電跡線;一反射器,其耦合至該基板並實質上環繞該安裝墊,且 該反射器包含一複合層形成於其內;一密封材料,其用以密封該發光晶粒,該密封材料位於該反射器內之該安裝墊及該複合層上及一透鏡,其實質上覆蓋該安裝墊,並安置於該反射器之該複合層上之該密封材料之上。
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TW102100604A TW201320385A (zh) | 2003-10-22 | 2004-10-20 | 功率式表面安裝之發光晶粒封裝 |
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TW100139845A TW201210061A (en) | 2003-10-22 | 2004-10-20 | Power surface mount light emitting die package |
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JP (1) | JP4602345B2 (zh) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8608349B2 (en) | 2002-09-04 | 2013-12-17 | Cree, Inc. | Power surface mount light emitting die package |
US8710514B2 (en) | 2002-09-04 | 2014-04-29 | Cree, Inc. | Power surface mount light emitting die package |
Families Citing this family (385)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6633120B2 (en) * | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
US7800121B2 (en) | 2002-08-30 | 2010-09-21 | Lumination Llc | Light emitting diode component |
US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
KR100622209B1 (ko) | 2002-08-30 | 2006-09-19 | 젤코어 엘엘씨 | 개선된 효율을 갖는 코팅된 발광다이오드 |
US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
US7692206B2 (en) * | 2002-12-06 | 2010-04-06 | Cree, Inc. | Composite leadframe LED package and method of making the same |
US6897486B2 (en) | 2002-12-06 | 2005-05-24 | Ban P. Loh | LED package die having a small footprint |
CA2523544A1 (en) | 2003-04-30 | 2004-11-18 | Cree, Inc. | High powered light emitter packages with compact optics |
AT501081B8 (de) * | 2003-07-11 | 2007-02-15 | Tridonic Optoelectronics Gmbh | Led sowie led-lichtquelle |
US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
FR2862424B1 (fr) * | 2003-11-18 | 2006-10-20 | Valeo Electronique Sys Liaison | Dispositif de refroidissement d'un composant electrique et procede de fabrication de ce dispositif |
US7518158B2 (en) * | 2003-12-09 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices and submounts |
KR100586944B1 (ko) * | 2003-12-26 | 2006-06-07 | 삼성전기주식회사 | 고출력 발광다이오드 패키지 및 제조방법 |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
US7279346B2 (en) * | 2004-03-31 | 2007-10-09 | Cree, Inc. | Method for packaging a light emitting device by one dispense then cure step followed by another |
KR100655894B1 (ko) * | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | 색온도 및 연색성이 우수한 파장변환 발광장치 |
KR100658700B1 (ko) | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Rgb 발광소자와 형광체를 조합한 발광장치 |
EP1751806B1 (de) * | 2004-05-31 | 2019-09-11 | OSRAM Opto Semiconductors GmbH | Optoelektronisches halbleiterbauelement und gehäuse-grundkörper für ein derartiges bauelement |
DE102004040468B4 (de) * | 2004-05-31 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Gehäuse-Grundkörper für ein derartiges Bauelement |
US7456499B2 (en) * | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
US7280288B2 (en) | 2004-06-04 | 2007-10-09 | Cree, Inc. | Composite optical lens with an integrated reflector |
KR100665299B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광물질 |
KR100665298B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광장치 |
US8308980B2 (en) * | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US20050280016A1 (en) * | 2004-06-17 | 2005-12-22 | Mok Thye L | PCB-based surface mount LED device with silicone-based encapsulation structure |
EP1763899A2 (en) * | 2004-06-29 | 2007-03-21 | Koninklijke Philips Electronics N.V. | Light emitting diode module |
US7329905B2 (en) * | 2004-06-30 | 2008-02-12 | Cree, Inc. | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
KR100604469B1 (ko) * | 2004-08-25 | 2006-07-25 | 박병재 | 발광소자와 그 패키지 구조체 및 제조방법 |
CN100433383C (zh) * | 2004-08-31 | 2008-11-12 | 丰田合成株式会社 | 光发射装置及其制造方法和光发射元件 |
JP2006100787A (ja) * | 2004-08-31 | 2006-04-13 | Toyoda Gosei Co Ltd | 発光装置および発光素子 |
JP4254669B2 (ja) * | 2004-09-07 | 2009-04-15 | 豊田合成株式会社 | 発光装置 |
DE102004047061B4 (de) | 2004-09-28 | 2018-07-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
US7891836B2 (en) * | 2004-10-22 | 2011-02-22 | Koninklijke Philips Electronics N.V. | Semiconductor light-emitting device with improved heatsinking |
US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US7868345B2 (en) * | 2004-10-27 | 2011-01-11 | Kyocera Corporation | Light emitting device mounting substrate, light emitting device housing package, light emitting apparatus, and illuminating apparatus |
US7670872B2 (en) * | 2004-10-29 | 2010-03-02 | LED Engin, Inc. (Cayman) | Method of manufacturing ceramic LED packages |
US8816369B2 (en) * | 2004-10-29 | 2014-08-26 | Led Engin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
US8134292B2 (en) * | 2004-10-29 | 2012-03-13 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
US8324641B2 (en) * | 2007-06-29 | 2012-12-04 | Ledengin, Inc. | Matrix material including an embedded dispersion of beads for a light-emitting device |
US7473933B2 (en) * | 2004-10-29 | 2009-01-06 | Ledengin, Inc. (Cayman) | High power LED package with universal bonding pads and interconnect arrangement |
US7772609B2 (en) * | 2004-10-29 | 2010-08-10 | Ledengin, Inc. (Cayman) | LED package with structure and materials for high heat dissipation |
US9929326B2 (en) | 2004-10-29 | 2018-03-27 | Ledengin, Inc. | LED package having mushroom-shaped lens with volume diffuser |
CN100353577C (zh) * | 2004-12-14 | 2007-12-05 | 新灯源科技有限公司 | 具倒装发光二极管的发光装置制造方法 |
US20060124953A1 (en) * | 2004-12-14 | 2006-06-15 | Negley Gerald H | Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same |
US7322732B2 (en) * | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US9070850B2 (en) * | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
US7304694B2 (en) * | 2005-01-12 | 2007-12-04 | Cree, Inc. | Solid colloidal dispersions for backlighting of liquid crystal displays |
EP1524705B1 (en) * | 2005-01-12 | 2008-03-12 | NeoBulb Technologies, Inc. | Flip chip type LED lighting device and its manufacturing method |
US7777247B2 (en) * | 2005-01-14 | 2010-08-17 | Cree, Inc. | Semiconductor light emitting device mounting substrates including a conductive lead extending therein |
US7262438B2 (en) * | 2005-03-08 | 2007-08-28 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | LED mounting having increased heat dissipation |
WO2006095949A1 (en) * | 2005-03-11 | 2006-09-14 | Seoul Semiconductor Co., Ltd. | Led package having an array of light emitting cells coupled in series |
KR100663906B1 (ko) * | 2005-03-14 | 2007-01-02 | 서울반도체 주식회사 | 발광 장치 |
EP1862035B1 (en) * | 2005-03-14 | 2013-05-15 | Koninklijke Philips Electronics N.V. | Phosphor in polycrystalline ceramic structure and a light-emitting element comprising same |
EP1861876A1 (en) * | 2005-03-24 | 2007-12-05 | Tir Systems Ltd. | Solid-state lighting device package |
EP1872401B1 (en) * | 2005-04-05 | 2018-09-19 | Philips Lighting Holding B.V. | Electronic device package with an integrated evaporator |
JP4595665B2 (ja) * | 2005-05-13 | 2010-12-08 | 富士電機システムズ株式会社 | 配線基板の製造方法 |
CN100391018C (zh) * | 2005-06-07 | 2008-05-28 | 吕大明 | Led器件及其封装方法 |
US8669572B2 (en) * | 2005-06-10 | 2014-03-11 | Cree, Inc. | Power lamp package |
US7980743B2 (en) | 2005-06-14 | 2011-07-19 | Cree, Inc. | LED backlighting for displays |
US20060292747A1 (en) * | 2005-06-27 | 2006-12-28 | Loh Ban P | Top-surface-mount power light emitter with integral heat sink |
TWI287300B (en) * | 2005-06-30 | 2007-09-21 | Lite On Technology Corp | Semiconductor package structure |
TWI422044B (zh) * | 2005-06-30 | 2014-01-01 | Cree Inc | 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置 |
KR100629521B1 (ko) * | 2005-07-29 | 2006-09-28 | 삼성전자주식회사 | Led 패키지 및 그 제조방법과 이를 이용한 led어레이 모듈 |
KR100983836B1 (ko) * | 2005-09-20 | 2010-09-27 | 파나소닉 전공 주식회사 | Led조명 기구 |
JP2007088155A (ja) * | 2005-09-21 | 2007-04-05 | Stanley Electric Co Ltd | 表面実装型led基板 |
US20070080360A1 (en) * | 2005-10-06 | 2007-04-12 | Url Mirsky | Microelectronic interconnect substrate and packaging techniques |
KR101241650B1 (ko) | 2005-10-19 | 2013-03-08 | 엘지이노텍 주식회사 | 엘이디 패키지 |
KR101258397B1 (ko) * | 2005-11-11 | 2013-04-30 | 서울반도체 주식회사 | 구리 알칼리토 실리케이트 혼성 결정 형광체 |
WO2007059657A1 (en) * | 2005-11-28 | 2007-05-31 | Jen-Shyan Chen | Package structure of light-emitting diode |
DE102006010729A1 (de) | 2005-12-09 | 2007-06-14 | Osram Opto Semiconductors Gmbh | Optisches Element, Herstellungsverfahren hierfür und Verbund-Bauteil mit einem optischen Element |
KR101055772B1 (ko) * | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | 발광장치 |
KR20080106402A (ko) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Led로부터 광을 유도하기 위한 개별 광학 디바이스 |
US7465069B2 (en) * | 2006-01-13 | 2008-12-16 | Chia-Mao Li | High-power LED package structure |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
US7528422B2 (en) * | 2006-01-20 | 2009-05-05 | Hymite A/S | Package for a light emitting element with integrated electrostatic discharge protection |
JP4895777B2 (ja) * | 2006-01-27 | 2012-03-14 | 京セラ株式会社 | 発光素子用配線基板ならびに発光装置 |
KR100780196B1 (ko) * | 2006-02-27 | 2007-11-27 | 삼성전기주식회사 | 발광다이오드 패키지, 발광다이오드 패키지용 회로기판 및그 제조방법 |
US7737634B2 (en) * | 2006-03-06 | 2010-06-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | LED devices having improved containment for liquid encapsulant |
TWI303872B (en) * | 2006-03-13 | 2008-12-01 | Ind Tech Res Inst | High power light emitting device assembly with esd preotection ability and the method of manufacturing the same |
US7808004B2 (en) * | 2006-03-17 | 2010-10-05 | Edison Opto Corporation | Light emitting diode package structure and method of manufacturing the same |
KR100738933B1 (ko) * | 2006-03-17 | 2007-07-12 | (주)대신엘이디 | 조명용 led 모듈 |
TWI449137B (zh) * | 2006-03-23 | 2014-08-11 | Ceramtec Ag | 構件或電路用的攜帶體 |
US8206779B2 (en) * | 2006-03-24 | 2012-06-26 | Fujifilm Corporation | Method for producing laminate, polarizing plate, and image display device |
US7675145B2 (en) * | 2006-03-28 | 2010-03-09 | Cree Hong Kong Limited | Apparatus, system and method for use in mounting electronic elements |
KR100875443B1 (ko) * | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | 발광 장치 |
JP5091421B2 (ja) * | 2006-04-07 | 2012-12-05 | 株式会社東芝 | 半導体発光装置 |
US8373195B2 (en) | 2006-04-12 | 2013-02-12 | SemiLEDs Optoelectronics Co., Ltd. | Light-emitting diode lamp with low thermal resistance |
US7863639B2 (en) * | 2006-04-12 | 2011-01-04 | Semileds Optoelectronics Co. Ltd. | Light-emitting diode lamp with low thermal resistance |
US8748915B2 (en) * | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US11210971B2 (en) | 2009-07-06 | 2021-12-28 | Cree Huizhou Solid State Lighting Company Limited | Light emitting diode display with tilted peak emission pattern |
US7635915B2 (en) | 2006-04-26 | 2009-12-22 | Cree Hong Kong Limited | Apparatus and method for use in mounting electronic elements |
US7655957B2 (en) * | 2006-04-27 | 2010-02-02 | Cree, Inc. | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same |
US20070268572A1 (en) * | 2006-05-20 | 2007-11-22 | Newport Corporation | Multiple emitter coupling devices and methods with beam transform system |
US7830608B2 (en) * | 2006-05-20 | 2010-11-09 | Oclaro Photonics, Inc. | Multiple emitter coupling devices and methods with beam transform system |
US7718991B2 (en) * | 2006-05-23 | 2010-05-18 | Cree Led Lighting Solutions, Inc. | Lighting device and method of making |
KR20090031370A (ko) | 2006-05-23 | 2009-03-25 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 |
US7989823B2 (en) * | 2006-06-08 | 2011-08-02 | Hong-Yuan Technology Co., Ltd. | Light emitting system, light emitting apparatus and forming method thereof |
US20070291373A1 (en) * | 2006-06-15 | 2007-12-20 | Newport Corporation | Coupling devices and methods for laser emitters |
US7680170B2 (en) * | 2006-06-15 | 2010-03-16 | Oclaro Photonics, Inc. | Coupling devices and methods for stacked laser emitter arrays |
US8610134B2 (en) * | 2006-06-29 | 2013-12-17 | Cree, Inc. | LED package with flexible polyimide circuit and method of manufacturing LED package |
US7906794B2 (en) * | 2006-07-05 | 2011-03-15 | Koninklijke Philips Electronics N.V. | Light emitting device package with frame and optically transmissive element |
TWM303325U (en) * | 2006-07-13 | 2006-12-21 | Everlight Electronics Co Ltd | Light emitting diode package |
US7960819B2 (en) * | 2006-07-13 | 2011-06-14 | Cree, Inc. | Leadframe-based packages for solid state emitting devices |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
US8735920B2 (en) * | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US7804147B2 (en) | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
US8367945B2 (en) * | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
DE112007001950T5 (de) | 2006-08-21 | 2009-07-02 | Innotec Corporation, Zeeland | Elektrische Vorrichtung mit platinenloser Montageanordnung für elektrische Komponenten |
KR101258227B1 (ko) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
KR100828900B1 (ko) | 2006-09-04 | 2008-05-09 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
US7842960B2 (en) | 2006-09-06 | 2010-11-30 | Lumination Llc | Light emitting packages and methods of making same |
US20080074884A1 (en) * | 2006-09-25 | 2008-03-27 | Thye Linn Mok | Compact high-intensty LED-based light source and method for making the same |
KR100774218B1 (ko) * | 2006-09-28 | 2007-11-08 | 엘지전자 주식회사 | 렌즈, 그 제조방법 및 발광 소자 패키지 |
CN101553928B (zh) | 2006-10-02 | 2011-06-01 | 伊鲁米特克有限公司 | Led系统和方法 |
US20090275157A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device shaping |
US7866897B2 (en) * | 2006-10-06 | 2011-01-11 | Oclaro Photonics, Inc. | Apparatus and method of coupling a fiber optic device to a laser |
US7631986B2 (en) * | 2006-10-31 | 2009-12-15 | Koninklijke Philips Electronics, N.V. | Lighting device package |
US7808013B2 (en) * | 2006-10-31 | 2010-10-05 | Cree, Inc. | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
CN101578711A (zh) * | 2006-11-09 | 2009-11-11 | 跃进封装公司 | Led反射性封装体 |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
US20080158886A1 (en) * | 2006-12-29 | 2008-07-03 | Siew It Pang | Compact High-Intensity LED Based Light Source |
DE102006062066A1 (de) * | 2006-12-29 | 2008-07-03 | Osram Opto Semiconductors Gmbh | Linsenanordnung und LED-Anzeigevorrichtung |
US8021904B2 (en) * | 2007-02-01 | 2011-09-20 | Cree, Inc. | Ohmic contacts to nitrogen polarity GaN |
US9711703B2 (en) * | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US7922360B2 (en) * | 2007-02-14 | 2011-04-12 | Cree, Inc. | Thermal transfer in solid state light emitting apparatus and methods of manufacturing |
US7712933B2 (en) | 2007-03-19 | 2010-05-11 | Interlum, Llc | Light for vehicles |
US8408773B2 (en) | 2007-03-19 | 2013-04-02 | Innotec Corporation | Light for vehicles |
KR100850666B1 (ko) * | 2007-03-30 | 2008-08-07 | 서울반도체 주식회사 | 메탈 pcb를 갖는 led 패키지 |
US7964888B2 (en) * | 2007-04-18 | 2011-06-21 | Cree, Inc. | Semiconductor light emitting device packages and methods |
JP5037683B2 (ja) * | 2007-05-25 | 2012-10-03 | モレックス インコーポレイテド | 発熱体及び電源用のヒートシンク |
US20090008662A1 (en) * | 2007-07-05 | 2009-01-08 | Ian Ashdown | Lighting device package |
US20090008670A1 (en) * | 2007-07-06 | 2009-01-08 | Topco Technologies Corp. | LED packaging structure with aluminum board and an LED lamp with said LED packaging structure |
US20090008671A1 (en) * | 2007-07-06 | 2009-01-08 | Lustrous Technology Ltd. | LED packaging structure with aluminum board and an LED lamp with said LED packaging structure |
TWI368336B (en) * | 2007-07-12 | 2012-07-11 | Chi Mei Lighting Tech Corp | Light emitting diode device and applications thereof |
CN201228949Y (zh) * | 2007-07-18 | 2009-04-29 | 胡凯 | 一种led灯散热灯体 |
CN101784636B (zh) * | 2007-08-22 | 2013-06-12 | 首尔半导体株式会社 | 非化学计量四方铜碱土硅酸盐磷光体及其制备方法 |
KR101055769B1 (ko) * | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치 |
KR101365621B1 (ko) | 2007-09-04 | 2014-02-24 | 서울반도체 주식회사 | 열 방출 슬러그들을 갖는 발광 다이오드 패키지 |
CN101388161A (zh) * | 2007-09-14 | 2009-03-18 | 科锐香港有限公司 | Led表面安装装置和并入有此装置的led显示器 |
US9593810B2 (en) * | 2007-09-20 | 2017-03-14 | Koninklijke Philips N.V. | LED package and method for manufacturing the LED package |
US9666762B2 (en) | 2007-10-31 | 2017-05-30 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US8866169B2 (en) * | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US9172012B2 (en) * | 2007-10-31 | 2015-10-27 | Cree, Inc. | Multi-chip light emitter packages and related methods |
USD615504S1 (en) | 2007-10-31 | 2010-05-11 | Cree, Inc. | Emitter package |
US9082921B2 (en) | 2007-10-31 | 2015-07-14 | Cree, Inc. | Multi-die LED package |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
EP2232592B1 (en) | 2007-12-12 | 2013-07-17 | Innotec Corporation | Method for overmolding a circuit board |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
USD633631S1 (en) | 2007-12-14 | 2011-03-01 | Cree Hong Kong Limited | Light source of light emitting diode |
CN102545062A (zh) * | 2007-12-17 | 2012-07-04 | 奥兰若光电公司 | 激光发射器模块及装配的方法 |
EP2073280A1 (de) * | 2007-12-20 | 2009-06-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflektive Sekundäroptik und Halbleiterbaugruppe sowie Verfahren zu dessen Herstellung |
US20090159125A1 (en) * | 2007-12-21 | 2009-06-25 | Eric Prather | Solar cell package for solar concentrator |
KR20090072941A (ko) * | 2007-12-28 | 2009-07-02 | 삼성전기주식회사 | 고출력 led 패키지 및 그 제조방법 |
USD634863S1 (en) | 2008-01-10 | 2011-03-22 | Cree Hong Kong Limited | Light source of light emitting diode |
US10008637B2 (en) * | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
US8304660B2 (en) * | 2008-02-07 | 2012-11-06 | National Taiwan University | Fully reflective and highly thermoconductive electronic module and method of manufacturing the same |
EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
KR100998009B1 (ko) | 2008-03-12 | 2010-12-03 | 삼성엘이디 주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
EP2283549A4 (en) | 2008-05-08 | 2013-08-28 | Oclaro Photonics Inc | HIGH BRIGHTNESS DIODE OUTPUT METHODS AND DEVICES |
US8049230B2 (en) | 2008-05-16 | 2011-11-01 | Cree Huizhou Opto Limited | Apparatus and system for miniature surface mount devices |
JP5320560B2 (ja) | 2008-05-20 | 2013-10-23 | 東芝ライテック株式会社 | 光源ユニット及び照明装置 |
JP5359045B2 (ja) * | 2008-06-18 | 2013-12-04 | 日亜化学工業株式会社 | 半導体装置およびその製造方法 |
TWI384649B (zh) * | 2008-06-18 | 2013-02-01 | Harvatek Corp | Light emitting diode chip encapsulation structure with embedded electrostatic protection function and its making method |
US7851818B2 (en) * | 2008-06-27 | 2010-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication of compact opto-electronic component packages |
WO2010001309A1 (en) * | 2008-07-01 | 2010-01-07 | Koninklijke Philips Electronics N.V. | Close proximity collimator for led |
GB2462815A (en) * | 2008-08-18 | 2010-02-24 | Sensitive Electronic Co Ltd | Light emitting diode lamp |
JP2010067902A (ja) * | 2008-09-12 | 2010-03-25 | Toshiba Corp | 発光装置 |
US8058664B2 (en) | 2008-09-26 | 2011-11-15 | Bridgelux, Inc. | Transparent solder mask LED assembly |
US8049236B2 (en) * | 2008-09-26 | 2011-11-01 | Bridgelux, Inc. | Non-global solder mask LED assembly |
US9252336B2 (en) * | 2008-09-26 | 2016-02-02 | Bridgelux, Inc. | Multi-cup LED assembly |
US20100078661A1 (en) * | 2008-09-26 | 2010-04-01 | Wei Shi | Machined surface led assembly |
US7887384B2 (en) * | 2008-09-26 | 2011-02-15 | Bridgelux, Inc. | Transparent ring LED assembly |
TWI528508B (zh) * | 2008-10-13 | 2016-04-01 | 榮創能源科技股份有限公司 | 高功率發光二極體陶瓷封裝之製造方法 |
US8075165B2 (en) * | 2008-10-14 | 2011-12-13 | Ledengin, Inc. | Total internal reflection lens and mechanical retention and locating device |
US9425172B2 (en) | 2008-10-24 | 2016-08-23 | Cree, Inc. | Light emitter array |
US8791471B2 (en) * | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
US20100117106A1 (en) * | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
CN102216669B (zh) * | 2008-11-18 | 2015-03-18 | 皇家飞利浦电子股份有限公司 | 电灯 |
KR101041018B1 (ko) * | 2008-11-21 | 2011-06-16 | 고견채 | 반사갓과 램프 일체형 엘이디 램프 |
CN101740675B (zh) * | 2008-11-25 | 2012-02-29 | 亿光电子工业股份有限公司 | 发光二极管电路板 |
JP2010153803A (ja) * | 2008-11-28 | 2010-07-08 | Toshiba Lighting & Technology Corp | 電子部品実装モジュール及び電気機器 |
US20100142198A1 (en) * | 2008-12-09 | 2010-06-10 | Chih-Wen Yang | Configurable Light Emitting System |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US20100149771A1 (en) | 2008-12-16 | 2010-06-17 | Cree, Inc. | Methods and Apparatus for Flexible Mounting of Light Emitting Devices |
CN101761795B (zh) * | 2008-12-23 | 2011-12-28 | 富准精密工业(深圳)有限公司 | 发光二极管照明装置及其封装方法 |
US8507300B2 (en) * | 2008-12-24 | 2013-08-13 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
US7923739B2 (en) | 2009-06-05 | 2011-04-12 | Cree, Inc. | Solid state lighting device |
US8598602B2 (en) | 2009-01-12 | 2013-12-03 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
US20110037083A1 (en) * | 2009-01-14 | 2011-02-17 | Alex Chi Keung Chan | Led package with contrasting face |
US10431567B2 (en) * | 2010-11-03 | 2019-10-01 | Cree, Inc. | White ceramic LED package |
JP5340763B2 (ja) * | 2009-02-25 | 2013-11-13 | ローム株式会社 | Ledランプ |
US8269248B2 (en) * | 2009-03-02 | 2012-09-18 | Thompson Joseph B | Light emitting assemblies and portions thereof |
US20120061695A1 (en) * | 2009-03-24 | 2012-03-15 | Kang Kim | Light-emitting diode package |
US8384097B2 (en) | 2009-04-08 | 2013-02-26 | Ledengin, Inc. | Package for multiple light emitting diodes |
US8598793B2 (en) | 2011-05-12 | 2013-12-03 | Ledengin, Inc. | Tuning of emitter with multiple LEDs to a single color bin |
US7985000B2 (en) * | 2009-04-08 | 2011-07-26 | Ledengin, Inc. | Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers |
US8957435B2 (en) * | 2009-04-28 | 2015-02-17 | Cree, Inc. | Lighting device |
WO2010132517A2 (en) * | 2009-05-12 | 2010-11-18 | David Gershaw | Led retrofit for miniature bulbs |
DE102009023854B4 (de) * | 2009-06-04 | 2023-11-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement |
US8860043B2 (en) * | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
US8686445B1 (en) | 2009-06-05 | 2014-04-01 | Cree, Inc. | Solid state lighting devices and methods |
TWM370182U (en) * | 2009-06-09 | 2009-12-01 | Advanced Connectek Inc | LED chip holder structure |
DE102009030205A1 (de) * | 2009-06-24 | 2010-12-30 | Litec-Lp Gmbh | Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore |
KR101055762B1 (ko) * | 2009-09-01 | 2011-08-11 | 서울반도체 주식회사 | 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치 |
JP2011009519A (ja) * | 2009-06-26 | 2011-01-13 | Hitachi Chem Co Ltd | 光半導体装置及び光半導体装置の製造方法 |
US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
US8598809B2 (en) | 2009-08-19 | 2013-12-03 | Cree, Inc. | White light color changing solid state lighting and methods |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8410371B2 (en) | 2009-09-08 | 2013-04-02 | Cree, Inc. | Electronic device submounts with thermally conductive vias and light emitting devices including the same |
WO2011033516A1 (en) * | 2009-09-20 | 2011-03-24 | Viagan Ltd. | Wafer level packaging of electronic devices |
US8593040B2 (en) | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
KR101075774B1 (ko) * | 2009-10-29 | 2011-10-26 | 삼성전기주식회사 | 발광소자 패키지 및 그 제조 방법 |
US7893445B2 (en) * | 2009-11-09 | 2011-02-22 | Cree, Inc. | Solid state emitter package including red and blue emitters |
US20110116262A1 (en) * | 2009-11-13 | 2011-05-19 | Phoseon Technology, Inc. | Economical partially collimating reflective micro optical array |
JP5623062B2 (ja) | 2009-11-13 | 2014-11-12 | シャープ株式会社 | 発光装置およびその製造方法 |
US8476645B2 (en) | 2009-11-13 | 2013-07-02 | Uni-Light Llc | LED thermal management |
TWI381563B (zh) * | 2009-11-20 | 2013-01-01 | Everlight Electronics Co Ltd | 發光二極體封裝及其製作方法 |
KR101163850B1 (ko) * | 2009-11-23 | 2012-07-09 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US10290788B2 (en) * | 2009-11-24 | 2019-05-14 | Luminus Devices, Inc. | Systems and methods for managing heat from an LED |
US8303141B2 (en) * | 2009-12-17 | 2012-11-06 | Ledengin, Inc. | Total internal reflection lens with integrated lamp cover |
JP2011151268A (ja) | 2010-01-22 | 2011-08-04 | Sharp Corp | 発光装置 |
JP5740654B2 (ja) | 2010-01-22 | 2015-06-24 | トゥー−シックス レイザー エンタープライズ ゲーエムベーハー | 遠視野ファイバ結合放射の均質化 |
US8350370B2 (en) | 2010-01-29 | 2013-01-08 | Cree Huizhou Opto Limited | Wide angle oval light emitting diode package |
US8362515B2 (en) | 2010-04-07 | 2013-01-29 | Chia-Ming Cheng | Chip package and method for forming the same |
US9080729B2 (en) | 2010-04-08 | 2015-07-14 | Ledengin, Inc. | Multiple-LED emitter for A-19 lamps |
US9345095B2 (en) | 2010-04-08 | 2016-05-17 | Ledengin, Inc. | Tunable multi-LED emitter module |
US8858022B2 (en) | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
CN102834942B (zh) * | 2010-04-09 | 2016-04-13 | 罗姆股份有限公司 | Led模块 |
US8901583B2 (en) | 2010-04-12 | 2014-12-02 | Cree Huizhou Opto Limited | Surface mount device thin package |
US9240526B2 (en) | 2010-04-23 | 2016-01-19 | Cree, Inc. | Solid state light emitting diode packages with leadframes and ceramic material |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
SG10201504617XA (en) | 2010-06-11 | 2015-07-30 | Ricoh Co Ltd | Information storage device, removable device, developer container, and image forming apparatus |
DE102010024862A1 (de) * | 2010-06-24 | 2011-12-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
US8648359B2 (en) | 2010-06-28 | 2014-02-11 | Cree, Inc. | Light emitting devices and methods |
US8269244B2 (en) | 2010-06-28 | 2012-09-18 | Cree, Inc. | LED package with efficient, isolated thermal path |
USD643819S1 (en) | 2010-07-16 | 2011-08-23 | Cree, Inc. | Package for light emitting diode (LED) lighting |
US9831393B2 (en) * | 2010-07-30 | 2017-11-28 | Cree Hong Kong Limited | Water resistant surface mount device package |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US20120074432A1 (en) * | 2010-09-29 | 2012-03-29 | Amtran Technology Co., Ltd | Led package module and manufacturing method thereof |
US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
CN102456803A (zh) * | 2010-10-20 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
US9000470B2 (en) | 2010-11-22 | 2015-04-07 | Cree, Inc. | Light emitter devices |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
TWI405936B (zh) | 2010-11-23 | 2013-08-21 | Ind Tech Res Inst | 夾持對位座及其發光二極體光板 |
US9240395B2 (en) | 2010-11-30 | 2016-01-19 | Cree Huizhou Opto Limited | Waterproof surface mount device package and method |
US9822951B2 (en) | 2010-12-06 | 2017-11-21 | Cree, Inc. | LED retrofit lens for fluorescent tube |
US10309627B2 (en) | 2012-11-08 | 2019-06-04 | Cree, Inc. | Light fixture retrofit kit with integrated light bar |
USD679842S1 (en) | 2011-01-03 | 2013-04-09 | Cree, Inc. | High brightness LED package |
US11101408B2 (en) | 2011-02-07 | 2021-08-24 | Creeled, Inc. | Components and methods for light emitting diode (LED) lighting |
US8610140B2 (en) | 2010-12-15 | 2013-12-17 | Cree, Inc. | Light emitting diode (LED) packages, systems, devices and related methods |
CN102142508A (zh) * | 2010-12-16 | 2011-08-03 | 西安炬光科技有限公司 | 一种高功率高亮度led光源封装结构及其封装方法 |
US8772817B2 (en) | 2010-12-22 | 2014-07-08 | Cree, Inc. | Electronic device submounts including substrates with thermally conductive vias |
US8644357B2 (en) | 2011-01-11 | 2014-02-04 | Ii-Vi Incorporated | High reliability laser emitter modules |
TW201251140A (en) | 2011-01-31 | 2012-12-16 | Cree Inc | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
TWI424544B (zh) * | 2011-03-31 | 2014-01-21 | Novatek Microelectronics Corp | 積體電路裝置 |
US9730309B2 (en) * | 2011-04-04 | 2017-08-08 | Ceramtec Gmbh | Ceramic printed circuit board comprising an al cooling body |
US9518723B2 (en) | 2011-04-08 | 2016-12-13 | Brite Shot, Inc. | Lighting fixture extension |
CN102769089B (zh) * | 2011-05-06 | 2015-01-07 | 展晶科技(深圳)有限公司 | 半导体封装结构 |
DE102011101052A1 (de) * | 2011-05-09 | 2012-11-15 | Heraeus Materials Technology Gmbh & Co. Kg | Substrat mit elektrisch neutralem Bereich |
US8513900B2 (en) | 2011-05-12 | 2013-08-20 | Ledengin, Inc. | Apparatus for tuning of emitter with multiple LEDs to a single color bin |
KR101869552B1 (ko) * | 2011-05-13 | 2018-06-21 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 자외선 램프 |
JP5968674B2 (ja) * | 2011-05-13 | 2016-08-10 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及びこれを備える紫外線ランプ |
US10842016B2 (en) * | 2011-07-06 | 2020-11-17 | Cree, Inc. | Compact optically efficient solid state light source with integrated thermal management |
KR101082587B1 (ko) * | 2011-07-07 | 2011-11-17 | 주식회사지엘에스 | 엘이디를 이용한 조명장치 |
US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
TW201312807A (zh) | 2011-07-21 | 2013-03-16 | Cree Inc | 光發射器元件封裝與部件及改良化學抵抗性的方法與相關方法 |
US8992045B2 (en) * | 2011-07-22 | 2015-03-31 | Guardian Industries Corp. | LED lighting systems and/or methods of making the same |
TWI437670B (zh) * | 2011-08-19 | 2014-05-11 | Subtron Technology Co Ltd | 散熱基板之結構及其製程 |
US20140159061A1 (en) * | 2011-08-25 | 2014-06-12 | Panasonic Corporation | Protection element and light emitting device using same |
KR101817807B1 (ko) * | 2011-09-20 | 2018-01-11 | 엘지이노텍 주식회사 | 발광소자 패키지 및 이를 포함하는 조명시스템 |
KR20140097284A (ko) | 2011-11-07 | 2014-08-06 | 크리,인코포레이티드 | 고전압 어레이 발광다이오드(led) 장치, 기구 및 방법 |
US9046241B2 (en) | 2011-11-12 | 2015-06-02 | Jingqun Xi | High efficiency directional light source using lens optics |
US10043960B2 (en) * | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
KR101197092B1 (ko) * | 2011-11-24 | 2012-11-07 | 삼성전자주식회사 | 발광소자 패키지 및 상기 발광소자 패키지의 제조 방법 |
US8564004B2 (en) | 2011-11-29 | 2013-10-22 | Cree, Inc. | Complex primary optics with intermediate elements |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
JP6107060B2 (ja) * | 2011-12-26 | 2017-04-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN103227274B (zh) * | 2012-01-31 | 2015-09-16 | 长春藤控股有限公司 | 发光二极管晶元封装体及其制造方法 |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
US11032884B2 (en) | 2012-03-02 | 2021-06-08 | Ledengin, Inc. | Method for making tunable multi-led emitter module |
US20150040388A1 (en) * | 2012-03-20 | 2015-02-12 | Applied Nanotech Holdings, Inc. | Application of Dielectric Layer and Circuit Traces on Heat Sink |
US9897284B2 (en) | 2012-03-28 | 2018-02-20 | Ledengin, Inc. | LED-based MR16 replacement lamp |
FR2988910B1 (fr) * | 2012-03-28 | 2014-12-26 | Commissariat Energie Atomique | Composant led a faible rth avec chemins electrique et thermique dissocies |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
JP6167619B2 (ja) * | 2012-04-06 | 2017-07-26 | 日亜化学工業株式会社 | 発光装置用パッケージ成形体及びそれを用いた発光装置 |
US9188290B2 (en) | 2012-04-10 | 2015-11-17 | Cree, Inc. | Indirect linear fixture |
US9500355B2 (en) | 2012-05-04 | 2016-11-22 | GE Lighting Solutions, LLC | Lamp with light emitting elements surrounding active cooling device |
DE112013002944T5 (de) | 2012-06-13 | 2015-02-19 | Innotec, Corp. | Flexibler Hohllichtleiter |
CN103515520B (zh) * | 2012-06-29 | 2016-03-23 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
FI125565B (en) * | 2012-09-08 | 2015-11-30 | Lumichip Ltd | LED chip-on-board component and lighting module |
KR101974348B1 (ko) | 2012-09-12 | 2019-05-02 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
CN103682060B (zh) * | 2012-09-14 | 2016-09-21 | 展晶科技(深圳)有限公司 | 发光二极管灯源装置 |
CN103682066B (zh) * | 2012-09-21 | 2016-08-03 | 展晶科技(深圳)有限公司 | 发光二极管模组及其制造方法 |
US9482396B2 (en) | 2012-11-08 | 2016-11-01 | Cree, Inc. | Integrated linear light engine |
US9494304B2 (en) | 2012-11-08 | 2016-11-15 | Cree, Inc. | Recessed light fixture retrofit kit |
US9441818B2 (en) | 2012-11-08 | 2016-09-13 | Cree, Inc. | Uplight with suspended fixture |
US10788176B2 (en) | 2013-02-08 | 2020-09-29 | Ideal Industries Lighting Llc | Modular LED lighting system |
DE102012110774A1 (de) * | 2012-11-09 | 2014-05-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
US8958448B2 (en) | 2013-02-04 | 2015-02-17 | Microsoft Corporation | Thermal management in laser diode device |
US9874333B2 (en) | 2013-03-14 | 2018-01-23 | Cree, Inc. | Surface ambient wrap light fixture |
USD738026S1 (en) | 2013-03-14 | 2015-09-01 | Cree, Inc. | Linear wrap light fixture |
US10584860B2 (en) | 2013-03-14 | 2020-03-10 | Ideal Industries, Llc | Linear light fixture with interchangeable light engine unit |
US9897267B2 (en) | 2013-03-15 | 2018-02-20 | Cree, Inc. | Light emitter components, systems, and related methods |
US9234801B2 (en) | 2013-03-15 | 2016-01-12 | Ledengin, Inc. | Manufacturing method for LED emitter with high color consistency |
US9215792B2 (en) * | 2013-03-15 | 2015-12-15 | Cree, Inc. | Connector devices, systems, and related methods for light emitter components |
USD733952S1 (en) | 2013-03-15 | 2015-07-07 | Cree, Inc. | Indirect linear fixture |
CN203082646U (zh) * | 2013-03-20 | 2013-07-24 | 厦门海莱照明有限公司 | 一体成型铝脱模散热器和一种led聚光灯的结构 |
DE102013103760A1 (de) | 2013-04-15 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
USD735683S1 (en) | 2013-05-03 | 2015-08-04 | Cree, Inc. | LED package |
US9711489B2 (en) | 2013-05-29 | 2017-07-18 | Cree Huizhou Solid State Lighting Company Limited | Multiple pixel surface mount device package |
CN104235754B (zh) * | 2013-06-20 | 2019-06-18 | 欧司朗有限公司 | 用于照明装置的透镜和具有该透镜的照明装置 |
USD739565S1 (en) | 2013-06-27 | 2015-09-22 | Cree, Inc. | Light emitter unit |
USD740453S1 (en) | 2013-06-27 | 2015-10-06 | Cree, Inc. | Light emitter unit |
US9461024B2 (en) | 2013-08-01 | 2016-10-04 | Cree, Inc. | Light emitter devices and methods for light emitting diode (LED) chips |
USD758976S1 (en) | 2013-08-08 | 2016-06-14 | Cree, Inc. | LED package |
US9644495B2 (en) | 2013-08-20 | 2017-05-09 | Honeywell International Inc. | Thermal isolating service tubes and assemblies thereof for gas turbine engines |
DE102013110355A1 (de) * | 2013-09-19 | 2015-03-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines Leiterrahmenverbunds |
US10900653B2 (en) | 2013-11-01 | 2021-01-26 | Cree Hong Kong Limited | LED mini-linear light engine |
US10100988B2 (en) | 2013-12-16 | 2018-10-16 | Cree, Inc. | Linear shelf light fixture with reflectors |
US10612747B2 (en) | 2013-12-16 | 2020-04-07 | Ideal Industries Lighting Llc | Linear shelf light fixture with gap filler elements |
USD750308S1 (en) | 2013-12-16 | 2016-02-23 | Cree, Inc. | Linear shelf light fixture |
KR102188495B1 (ko) * | 2014-01-21 | 2020-12-08 | 삼성전자주식회사 | 반도체 발광소자의 제조 방법 |
US9406654B2 (en) | 2014-01-27 | 2016-08-02 | Ledengin, Inc. | Package for high-power LED devices |
US9456201B2 (en) | 2014-02-10 | 2016-09-27 | Microsoft Technology Licensing, Llc | VCSEL array for a depth camera |
DE102014204116A1 (de) * | 2014-03-06 | 2015-09-10 | Osram Gmbh | LED-Modul mit Substratkörper |
EP3130012B1 (en) | 2014-04-07 | 2021-06-09 | Lumileds LLC | Lighting device including a thermally conductive body and a semiconductor light emitting device |
USD757324S1 (en) | 2014-04-14 | 2016-05-24 | Cree, Inc. | Linear shelf light fixture with reflectors |
CN103887420A (zh) * | 2014-04-18 | 2014-06-25 | 苏州东山精密制造股份有限公司 | 一种led封装结构及led制作方法 |
US9577406B2 (en) | 2014-06-27 | 2017-02-21 | Microsoft Technology Licensing, Llc | Edge-emitting laser diode package comprising heat spreader |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
TWI572069B (zh) * | 2014-07-28 | 2017-02-21 | 揚昇照明股份有限公司 | 發光裝置及散熱片 |
KR20160023975A (ko) * | 2014-08-21 | 2016-03-04 | 삼성전자주식회사 | 반도체 패키지 |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
USD790486S1 (en) | 2014-09-30 | 2017-06-27 | Cree, Inc. | LED package with truncated encapsulant |
US9379298B2 (en) * | 2014-10-03 | 2016-06-28 | Henkel IP & Holding GmbH | Laminate sub-mounts for LED surface mount package |
JP6451257B2 (ja) * | 2014-11-21 | 2019-01-16 | 富士電機株式会社 | 半導体装置 |
EP3224874B1 (en) | 2014-11-26 | 2019-04-24 | LedEngin, Inc. | Compact emitter for warm dimming and color tunable lamp |
USD826871S1 (en) * | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
CA2971717C (en) | 2014-12-22 | 2021-08-24 | Mag Instrument Inc. | Improved efficiency lighting apparatus with led directly mounted to a heatsink |
USD777122S1 (en) | 2015-02-27 | 2017-01-24 | Cree, Inc. | LED package |
US9530943B2 (en) | 2015-02-27 | 2016-12-27 | Ledengin, Inc. | LED emitter packages with high CRI |
JP6415356B2 (ja) * | 2015-03-04 | 2018-10-31 | 東京窯業株式会社 | 鉄溶湯用炭化珪素質耐火ブロックおよびその製造方法 |
CN113130725B (zh) * | 2015-03-31 | 2024-09-24 | 科锐Led公司 | 具有包封的发光二极管和方法 |
JP2016207739A (ja) * | 2015-04-17 | 2016-12-08 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
USD783547S1 (en) | 2015-06-04 | 2017-04-11 | Cree, Inc. | LED package |
US9871007B2 (en) * | 2015-09-25 | 2018-01-16 | Intel Corporation | Packaged integrated circuit device with cantilever structure |
US10008648B2 (en) * | 2015-10-08 | 2018-06-26 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
KR102558280B1 (ko) | 2016-02-05 | 2023-07-25 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 광원 유닛 및 이를 구비한 라이트 유닛 |
US10403792B2 (en) * | 2016-03-07 | 2019-09-03 | Rayvio Corporation | Package for ultraviolet emitting devices |
WO2017155282A1 (ko) * | 2016-03-07 | 2017-09-14 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
US10219345B2 (en) | 2016-11-10 | 2019-02-26 | Ledengin, Inc. | Tunable LED emitter with continuous spectrum |
DE102016125348B4 (de) * | 2016-12-22 | 2020-06-25 | Rogers Germany Gmbh | Trägersubstrat für elektrische Bauteile und Verfahren zur Herstellung eines Trägersubstrats |
US10297724B2 (en) * | 2017-07-10 | 2019-05-21 | Ngk Spark Plug Co., Ltd. | Package for mounting light-emitting device |
JP2019046649A (ja) * | 2017-09-01 | 2019-03-22 | 株式会社エンプラス | 発光装置、面光源装置および表示装置 |
JP1618491S (zh) * | 2017-11-21 | 2018-11-19 | ||
KR102471689B1 (ko) * | 2017-12-22 | 2022-11-28 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
USD871485S1 (en) * | 2018-01-15 | 2019-12-31 | Axis Ab | Camera |
US10575374B2 (en) | 2018-03-09 | 2020-02-25 | Ledengin, Inc. | Package for flip-chip LEDs with close spacing of LED chips |
US10361352B1 (en) * | 2018-03-22 | 2019-07-23 | Excellence Opto, Inc. | High heat dissipation light emitting diode package structure having at least two light cups and lateral light emission |
JP1628923S (zh) * | 2018-04-26 | 2019-04-08 | ||
KR102607890B1 (ko) * | 2018-06-01 | 2023-11-29 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
JP6679767B1 (ja) * | 2019-01-07 | 2020-04-15 | Dowaエレクトロニクス株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
US11032908B2 (en) | 2019-06-07 | 2021-06-08 | Uop Llc | Circuit board, assembly and method of assembling |
CN111525017B (zh) * | 2020-07-03 | 2020-10-02 | 华引芯(武汉)科技有限公司 | 一种倒装led全无机器件及其制作方法 |
DE102020126391A1 (de) | 2020-10-08 | 2022-04-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Led package für uv licht und verfahren |
TWI812124B (zh) * | 2022-03-28 | 2023-08-11 | 李銘洛 | 電子模組及其承載結構與製法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3760237A (en) * | 1972-06-21 | 1973-09-18 | Gen Electric | Solid state lamp assembly having conical light director |
US3875456A (en) * | 1972-04-04 | 1975-04-01 | Hitachi Ltd | Multi-color semiconductor lamp |
US4168102A (en) * | 1976-10-12 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | Light-emitting display device including a light diffusing bonding layer |
JP2002093206A (ja) * | 2000-09-18 | 2002-03-29 | Stanley Electric Co Ltd | Led信号灯具 |
TW556364B (en) * | 2001-08-28 | 2003-10-01 | Matsushita Electric Works Ltd | Light emitting device using LED |
Family Cites Families (152)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3443140A (en) * | 1965-04-06 | 1969-05-06 | Gen Electric | Light emitting semiconductor devices of improved transmission characteristics |
JPS5936837B2 (ja) * | 1977-04-05 | 1984-09-06 | 株式会社東芝 | 光半導体装置 |
US4267559A (en) | 1979-09-24 | 1981-05-12 | Bell Telephone Laboratories, Incorporated | Low thermal impedance light-emitting diode package |
ATE20366T1 (de) * | 1982-10-19 | 1986-06-15 | Buse Kohlensaeure | Verfahren und vorrichtung zum untersuchen der struktur und der durchlaessigkeit von erd- und gesteinsbereichen. |
US4603496A (en) * | 1985-02-04 | 1986-08-05 | Adaptive Micro Systems, Inc. | Electronic display with lens matrix |
KR910007381B1 (ko) * | 1987-08-26 | 1991-09-25 | 타이완 라이톤 일렉트로닉 컴패니 리미티드 | 발광 다이오드(led) 디스플레이 장치 |
USRE37707E1 (en) | 1990-02-22 | 2002-05-21 | Stmicroelectronics S.R.L. | Leadframe with heat dissipator connected to S-shaped fingers |
US5119174A (en) * | 1990-10-26 | 1992-06-02 | Chen Der Jong | Light emitting diode display with PCB base |
US5173839A (en) | 1990-12-10 | 1992-12-22 | Grumman Aerospace Corporation | Heat-dissipating method and device for led display |
KR940019586A (ko) | 1993-02-04 | 1994-09-14 | 휴고 라이히무트, 한스 블뢰흐레 | 엘리베이터용 표시소자 |
JP3420612B2 (ja) | 1993-06-25 | 2003-06-30 | 株式会社東芝 | Ledランプ |
US5789772A (en) | 1994-07-15 | 1998-08-04 | The Whitaker Corporation | Semi-insulating surface light emitting devices |
US5506929A (en) | 1994-10-19 | 1996-04-09 | Clio Technologies, Inc. | Light expanding system for producing a linear or planar light beam from a point-like light source |
US5649757A (en) * | 1994-11-04 | 1997-07-22 | Aleman; Thomas M. | Aquarium background illuminator |
JPH0983018A (ja) * | 1995-09-11 | 1997-03-28 | Nippon Denyo Kk | 発光ダイオードユニット |
US5849396A (en) * | 1995-09-13 | 1998-12-15 | Hughes Electronics Corporation | Multilayer electronic structure and its preparation |
JP3393247B2 (ja) | 1995-09-29 | 2003-04-07 | ソニー株式会社 | 光学装置およびその製造方法 |
US5633963A (en) * | 1995-12-12 | 1997-05-27 | Raytheon Company | Optical rotary joint for single and multimode fibers |
DE19621124A1 (de) * | 1996-05-24 | 1997-11-27 | Siemens Ag | Optoelektronischer Wandler und dessen Herstellungsverfahren |
US5785418A (en) | 1996-06-27 | 1998-07-28 | Hochstein; Peter A. | Thermally protected LED array |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US5857767A (en) * | 1996-09-23 | 1999-01-12 | Relume Corporation | Thermal management system for L.E.D. arrays |
JPH1098215A (ja) | 1996-09-24 | 1998-04-14 | Toyoda Gosei Co Ltd | 発光ダイオード装置 |
US6582103B1 (en) * | 1996-12-12 | 2003-06-24 | Teledyne Lighting And Display Products, Inc. | Lighting apparatus |
US6124635A (en) * | 1997-03-21 | 2000-09-26 | Honda Giken Kogyo Kabushiki Kaisha | Functionally gradient integrated metal-ceramic member and semiconductor circuit substrate application thereof |
JP3882266B2 (ja) * | 1997-05-19 | 2007-02-14 | 日亜化学工業株式会社 | 半導体装置 |
US6238599B1 (en) | 1997-06-18 | 2001-05-29 | International Business Machines Corporation | High conductivity, high strength, lead-free, low cost, electrically conducting materials and applications |
US5982090A (en) | 1997-07-11 | 1999-11-09 | Kaiser Aerospace And Electronics Coporation | Integrated dual mode flat backlight |
US5847507A (en) * | 1997-07-14 | 1998-12-08 | Hewlett-Packard Company | Fluorescent dye added to epoxy of light emitting diode lens |
US5869883A (en) | 1997-09-26 | 1999-02-09 | Stanley Wang, President Pantronix Corp. | Packaging of semiconductor circuit in pre-molded plastic package |
TW408497B (en) | 1997-11-25 | 2000-10-11 | Matsushita Electric Works Ltd | LED illuminating apparatus |
JPH11163419A (ja) * | 1997-11-26 | 1999-06-18 | Rohm Co Ltd | 発光装置 |
DE19755734A1 (de) | 1997-12-15 | 1999-06-24 | Siemens Ag | Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes |
JP3329716B2 (ja) | 1997-12-15 | 2002-09-30 | 日亜化学工業株式会社 | チップタイプled |
US6469322B1 (en) * | 1998-02-06 | 2002-10-22 | General Electric Company | Green emitting phosphor for use in UV light emitting diodes |
US6525386B1 (en) * | 1998-03-10 | 2003-02-25 | Masimo Corporation | Non-protruding optoelectronic lens |
US5903052A (en) | 1998-05-12 | 1999-05-11 | Industrial Technology Research Institute | Structure for semiconductor package for improving the efficiency of spreading heat |
JP2000049184A (ja) | 1998-05-27 | 2000-02-18 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3334618B2 (ja) * | 1998-06-16 | 2002-10-15 | 住友電装株式会社 | 電気接続箱 |
JP2000037901A (ja) * | 1998-07-21 | 2000-02-08 | Sanyo Electric Co Ltd | プリントヘッド |
US5959316A (en) | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
US6335548B1 (en) | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
JP2000101149A (ja) | 1998-09-25 | 2000-04-07 | Rohm Co Ltd | 半導体発光素子 |
JP3871820B2 (ja) * | 1998-10-23 | 2007-01-24 | ローム株式会社 | 半導体発光素子 |
US6274924B1 (en) * | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
US6429583B1 (en) * | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
JP3246495B2 (ja) | 1999-01-01 | 2002-01-15 | サンケン電気株式会社 | 半導体発光モジュール用アウタレンズ |
JP2000208822A (ja) | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP2000236116A (ja) * | 1999-02-15 | 2000-08-29 | Matsushita Electric Works Ltd | 光源装置 |
JP3553405B2 (ja) * | 1999-03-03 | 2004-08-11 | ローム株式会社 | チップ型電子部品 |
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
US6521916B2 (en) | 1999-03-15 | 2003-02-18 | Gentex Corporation | Radiation emitter device having an encapsulant with different zones of thermal conductivity |
JP2000269551A (ja) | 1999-03-18 | 2000-09-29 | Rohm Co Ltd | チップ型発光装置 |
US6457645B1 (en) | 1999-04-13 | 2002-10-01 | Hewlett-Packard Company | Optical assembly having lens offset from optical axis |
DE19918370B4 (de) * | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED-Weißlichtquelle mit Linse |
JP2001068742A (ja) * | 1999-08-25 | 2001-03-16 | Sanyo Electric Co Ltd | 混成集積回路装置 |
EP1059678A2 (en) | 1999-06-09 | 2000-12-13 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
US6489637B1 (en) | 1999-06-09 | 2002-12-03 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
JP3656715B2 (ja) * | 1999-07-23 | 2005-06-08 | 松下電工株式会社 | 光源装置 |
JP2001044452A (ja) | 1999-08-03 | 2001-02-16 | Sony Corp | 光通信用モジュール |
JP4330716B2 (ja) | 1999-08-04 | 2009-09-16 | 浜松ホトニクス株式会社 | 投光装置 |
KR100335480B1 (ko) | 1999-08-24 | 2002-05-04 | 김덕중 | 칩 패드가 방열 통로로 사용되는 리드프레임 및 이를 포함하는반도체 패키지 |
US6504301B1 (en) | 1999-09-03 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Non-incandescent lightbulb package using light emitting diodes |
JP2001177136A (ja) | 1999-10-05 | 2001-06-29 | Fuji Electric Co Ltd | 薄膜太陽電池の製造方法ならびに粉体噴射法による薄膜基板貫通孔加工装置およびパターニング装置 |
JP3886306B2 (ja) | 1999-10-13 | 2007-02-28 | ローム株式会社 | チップ型半導体発光装置 |
JP2001144333A (ja) | 1999-11-10 | 2001-05-25 | Sharp Corp | 発光装置とその製造方法 |
US6362964B1 (en) * | 1999-11-17 | 2002-03-26 | International Rectifier Corp. | Flexible power assembly |
US6559525B2 (en) | 2000-01-13 | 2003-05-06 | Siliconware Precision Industries Co., Ltd. | Semiconductor package having heat sink at the outer surface |
JP4944301B2 (ja) | 2000-02-01 | 2012-05-30 | パナソニック株式会社 | 光電子装置およびその製造方法 |
US6456766B1 (en) | 2000-02-01 | 2002-09-24 | Cornell Research Foundation Inc. | Optoelectronic packaging |
US6492725B1 (en) | 2000-02-04 | 2002-12-10 | Lumileds Lighting, U.S., Llc | Concentrically leaded power semiconductor device package |
AU3226101A (en) * | 2000-02-09 | 2001-08-20 | Nippon Leiz Corporation | Light source |
US6318886B1 (en) | 2000-02-11 | 2001-11-20 | Whelen Engineering Company | High flux led assembly |
JP2001326390A (ja) | 2000-05-18 | 2001-11-22 | Rohm Co Ltd | 裏面発光チップ型発光素子およびそれに用いる絶縁性基板 |
DE60137995D1 (de) | 2000-08-09 | 2009-04-30 | Avago Technologies General Ip | Lichtemittierende Vorrichtungen |
US6614103B1 (en) * | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
US6490104B1 (en) | 2000-09-15 | 2002-12-03 | Three-Five Systems, Inc. | Illumination system for a micro display |
JP2002103977A (ja) | 2000-09-29 | 2002-04-09 | Johnan Seisakusho Co Ltd | 車両のサンルーフ装置 |
US6552368B2 (en) * | 2000-09-29 | 2003-04-22 | Omron Corporation | Light emission device |
TW557373B (en) * | 2000-10-25 | 2003-10-11 | Lumileds Lighting Bv | Illumination system and display device |
US6768525B2 (en) * | 2000-12-01 | 2004-07-27 | Lumileds Lighting U.S. Llc | Color isolated backlight for an LCD |
JP3614776B2 (ja) | 2000-12-19 | 2005-01-26 | シャープ株式会社 | チップ部品型ledとその製造方法 |
AT410266B (de) | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
US6468321B2 (en) * | 2001-01-10 | 2002-10-22 | John W. Kinsel | Blade and skirt assembly for directional gas cleaning and drying system |
MY131962A (en) | 2001-01-24 | 2007-09-28 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
DE10105802A1 (de) * | 2001-02-07 | 2002-08-08 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Reflektorbehaftetes Halbleiterbauelement |
US6541800B2 (en) * | 2001-02-22 | 2003-04-01 | Weldon Technologies, Inc. | High power LED |
JP4833421B2 (ja) | 2001-03-08 | 2011-12-07 | ローム株式会社 | 発光素子および実装基板 |
US6844903B2 (en) * | 2001-04-04 | 2005-01-18 | Lumileds Lighting U.S., Llc | Blue backlight and phosphor layer for a color LCD |
JP2002314139A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
EP1387412B1 (en) * | 2001-04-12 | 2009-03-11 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
JP2002319711A (ja) | 2001-04-20 | 2002-10-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
US6429513B1 (en) | 2001-05-25 | 2002-08-06 | Amkor Technology, Inc. | Active heat sink for cooling a semiconductor chip |
JP4813691B2 (ja) | 2001-06-06 | 2011-11-09 | シチズン電子株式会社 | 発光ダイオード |
USD465207S1 (en) | 2001-06-08 | 2002-11-05 | Gem Services, Inc. | Leadframe matrix for a surface mount package |
TW497758U (en) | 2001-07-02 | 2002-08-01 | Chiou-Sen Hung | Improvement of surface mounted light emitting diode structure |
US6670648B2 (en) | 2001-07-19 | 2003-12-30 | Rohm Co., Ltd. | Semiconductor light-emitting device having a reflective case |
TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
JP2003110146A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
TW498516B (en) | 2001-08-08 | 2002-08-11 | Siliconware Precision Industries Co Ltd | Manufacturing method for semiconductor package with heat sink |
JP3989794B2 (ja) * | 2001-08-09 | 2007-10-10 | 松下電器産業株式会社 | Led照明装置およびled照明光源 |
TW567619B (en) * | 2001-08-09 | 2003-12-21 | Matsushita Electric Ind Co Ltd | LED lighting apparatus and card-type LED light source |
US20030058650A1 (en) | 2001-09-25 | 2003-03-27 | Kelvin Shih | Light emitting diode with integrated heat dissipater |
JP2003100986A (ja) | 2001-09-26 | 2003-04-04 | Toshiba Corp | 半導体装置 |
JP3948650B2 (ja) | 2001-10-09 | 2007-07-25 | アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド | 発光ダイオード及びその製造方法 |
US6531328B1 (en) | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
US6501103B1 (en) * | 2001-10-23 | 2002-12-31 | Lite-On Electronics, Inc. | Light emitting diode assembly with low thermal resistance |
KR100439402B1 (ko) | 2001-12-24 | 2004-07-09 | 삼성전기주식회사 | 발광다이오드 패키지 |
US6480389B1 (en) | 2002-01-04 | 2002-11-12 | Opto Tech Corporation | Heat dissipation structure for solid-state light emitting device package |
TW518775B (en) | 2002-01-29 | 2003-01-21 | Chi-Hsing Hsu | Immersion cooling type light emitting diode and its packaging method |
JP4269709B2 (ja) | 2002-02-19 | 2009-05-27 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP4211359B2 (ja) | 2002-03-06 | 2009-01-21 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
JP4172196B2 (ja) | 2002-04-05 | 2008-10-29 | 豊田合成株式会社 | 発光ダイオード |
JP2003309292A (ja) | 2002-04-15 | 2003-10-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオードのメタルコア基板及びその製造方法 |
US7122884B2 (en) | 2002-04-16 | 2006-10-17 | Fairchild Semiconductor Corporation | Robust leaded molded packages and methods for forming the same |
AU2003235489A1 (en) * | 2002-05-08 | 2003-11-11 | Tom Mcneil | High efficiency solid-state light source and methods of use and manufacture |
US7122844B2 (en) * | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
US7244965B2 (en) | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
US7775685B2 (en) * | 2003-05-27 | 2010-08-17 | Cree, Inc. | Power surface mount light emitting die package |
US7264378B2 (en) | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
US6897486B2 (en) * | 2002-12-06 | 2005-05-24 | Ban P. Loh | LED package die having a small footprint |
US7692206B2 (en) * | 2002-12-06 | 2010-04-06 | Cree, Inc. | Composite leadframe LED package and method of making the same |
EP2262006A3 (en) * | 2003-02-26 | 2012-03-21 | Cree, Inc. | Composite white light source and method for fabricating |
TW560813U (en) | 2003-03-06 | 2003-11-01 | Shang-Hua You | Improved LED seat |
US6789921B1 (en) * | 2003-03-25 | 2004-09-14 | Rockwell Collins | Method and apparatus for backlighting a dual mode liquid crystal display |
US7002727B2 (en) | 2003-03-31 | 2006-02-21 | Reflectivity, Inc. | Optical materials in packaging micromirror devices |
US6903380B2 (en) * | 2003-04-11 | 2005-06-07 | Weldon Technologies, Inc. | High power light emitting diode |
US20050001433A1 (en) * | 2003-04-30 | 2005-01-06 | Seelink Technology Corporation | Display system having uniform luminosity and wind generator |
US7095053B2 (en) * | 2003-05-05 | 2006-08-22 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
US7164197B2 (en) * | 2003-06-19 | 2007-01-16 | 3M Innovative Properties Company | Dielectric composite material |
JP4360858B2 (ja) * | 2003-07-29 | 2009-11-11 | シチズン電子株式会社 | 表面実装型led及びそれを用いた発光装置 |
US7102177B2 (en) | 2003-08-26 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light-emitting diode incorporating gradient index element |
FR2859202B1 (fr) * | 2003-08-29 | 2005-10-14 | Commissariat Energie Atomique | Compose piegeur de l'hydrogene, procede de fabrication et utilisations |
US20080231170A1 (en) | 2004-01-26 | 2008-09-25 | Fukudome Masato | Wavelength Converter, Light-Emitting Device, Method of Producing Wavelength Converter and Method of Producing Light-Emitting Device |
US7044620B2 (en) * | 2004-04-30 | 2006-05-16 | Guide Corporation | LED assembly with reverse circuit board |
US7997771B2 (en) | 2004-06-01 | 2011-08-16 | 3M Innovative Properties Company | LED array systems |
US7280288B2 (en) | 2004-06-04 | 2007-10-09 | Cree, Inc. | Composite optical lens with an integrated reflector |
US7456499B2 (en) | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
US7204631B2 (en) * | 2004-06-30 | 2007-04-17 | 3M Innovative Properties Company | Phosphor based illumination system having a plurality of light guides and an interference reflector |
US7118262B2 (en) * | 2004-07-23 | 2006-10-10 | Cree, Inc. | Reflective optical elements for semiconductor light emitting devices |
WO2006044902A2 (en) * | 2004-10-18 | 2006-04-27 | Bwt Property, Inc. | A solid-state lighting apparatus for navigational aids |
US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
TWI255377B (en) * | 2004-11-05 | 2006-05-21 | Au Optronics Corp | Backlight module |
US7322732B2 (en) * | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
KR101115800B1 (ko) * | 2004-12-27 | 2012-03-08 | 엘지디스플레이 주식회사 | 발광소자 패키지, 이의 제조 방법 및 백라이트 유닛 |
US20060215075A1 (en) * | 2005-03-23 | 2006-09-28 | Chi-Jen Huang | Backlight Module of LCD Device |
WO2006112039A1 (ja) | 2005-04-01 | 2006-10-26 | Matsushita Electric Industrial Co., Ltd. | 表面実装型光半導体装置およびその製造方法 |
US7297380B2 (en) | 2005-05-20 | 2007-11-20 | General Electric Company | Light-diffusing films, backlight display devices comprising the light-diffusing films, and methods of making the same |
US7980743B2 (en) | 2005-06-14 | 2011-07-19 | Cree, Inc. | LED backlighting for displays |
US20060292747A1 (en) | 2005-06-27 | 2006-12-28 | Loh Ban P | Top-surface-mount power light emitter with integral heat sink |
US20070054149A1 (en) * | 2005-08-23 | 2007-03-08 | Chi-Ming Cheng | Substrate assembly of a display device and method of manufacturing the same |
US7735543B2 (en) | 2006-07-25 | 2010-06-15 | Metal Casting Technology, Inc. | Method of compacting support particulates |
-
2003
- 2003-10-22 US US10/692,351 patent/US7244965B2/en not_active Expired - Lifetime
-
2004
- 2004-10-20 AT AT04795871T patent/ATE444568T1/de not_active IP Right Cessation
- 2004-10-20 EP EP09171045.9A patent/EP2139051B1/en not_active Expired - Lifetime
- 2004-10-20 TW TW100139852A patent/TWI495143B/zh active
- 2004-10-20 TW TW102100604A patent/TW201320385A/zh unknown
- 2004-10-20 CA CA002549822A patent/CA2549822A1/en not_active Abandoned
- 2004-10-20 DE DE602004023409T patent/DE602004023409D1/de not_active Expired - Lifetime
- 2004-10-20 KR KR1020067007929A patent/KR101244075B1/ko active IP Right Grant
- 2004-10-20 TW TW102105621A patent/TWI550897B/zh active
- 2004-10-20 KR KR1020127027757A patent/KR101314986B1/ko active IP Right Grant
- 2004-10-20 KR KR1020137009561A patent/KR101386846B1/ko active IP Right Grant
- 2004-10-20 CN CN2004800309433A patent/CN1871710B/zh not_active Expired - Lifetime
- 2004-10-20 JP JP2006536764A patent/JP4602345B2/ja not_active Expired - Lifetime
- 2004-10-20 TW TW093131884A patent/TWI392105B/zh active
- 2004-10-20 CN CN201110021562.0A patent/CN102148316B/zh not_active Expired - Lifetime
- 2004-10-20 EP EP04795871A patent/EP1680816B1/en not_active Expired - Lifetime
- 2004-10-20 TW TW100139850A patent/TWI538255B/zh active
- 2004-10-20 KR KR1020117002575A patent/KR101160037B1/ko active IP Right Grant
- 2004-10-20 TW TW100139845A patent/TW201210061A/zh unknown
- 2004-10-20 WO PCT/US2004/034768 patent/WO2005043627A1/en active Application Filing
-
2007
- 2007-03-22 US US11/689,868 patent/US8188488B2/en not_active Expired - Lifetime
-
2011
- 2011-02-07 US US13/022,365 patent/US8530915B2/en not_active Expired - Lifetime
-
2012
- 2012-05-25 US US13/481,334 patent/US8710514B2/en not_active Expired - Lifetime
-
2014
- 2014-03-21 US US14/221,982 patent/US20140284643A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3875456A (en) * | 1972-04-04 | 1975-04-01 | Hitachi Ltd | Multi-color semiconductor lamp |
US3760237A (en) * | 1972-06-21 | 1973-09-18 | Gen Electric | Solid state lamp assembly having conical light director |
US4168102A (en) * | 1976-10-12 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | Light-emitting display device including a light diffusing bonding layer |
JP2002093206A (ja) * | 2000-09-18 | 2002-03-29 | Stanley Electric Co Ltd | Led信号灯具 |
TW556364B (en) * | 2001-08-28 | 2003-10-01 | Matsushita Electric Works Ltd | Light emitting device using LED |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8608349B2 (en) | 2002-09-04 | 2013-12-17 | Cree, Inc. | Power surface mount light emitting die package |
US8622582B2 (en) | 2002-09-04 | 2014-01-07 | Cree, Inc. | Power surface mount light emitting die package |
US8710514B2 (en) | 2002-09-04 | 2014-04-29 | Cree, Inc. | Power surface mount light emitting die package |
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