WO2007140651A1 - Système et appareil électroluminescents et leur procédé de formation - Google Patents

Système et appareil électroluminescents et leur procédé de formation Download PDF

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Publication number
WO2007140651A1
WO2007140651A1 PCT/CN2006/001248 CN2006001248W WO2007140651A1 WO 2007140651 A1 WO2007140651 A1 WO 2007140651A1 CN 2006001248 W CN2006001248 W CN 2006001248W WO 2007140651 A1 WO2007140651 A1 WO 2007140651A1
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WO
WIPO (PCT)
Prior art keywords
annular structure
substrate
wafer
light emitting
protective layer
Prior art date
Application number
PCT/CN2006/001248
Other languages
English (en)
Chinese (zh)
Inventor
Yu-Chao Wu
Original Assignee
Hong-Yuan Technology Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hong-Yuan Technology Co., Ltd filed Critical Hong-Yuan Technology Co., Ltd
Priority to US12/303,916 priority Critical patent/US7989823B2/en
Priority to PCT/CN2006/001248 priority patent/WO2007140651A1/fr
Priority to TW095137428A priority patent/TW200802963A/zh
Priority to PCT/CN2006/002625 priority patent/WO2007140660A1/fr
Publication of WO2007140651A1 publication Critical patent/WO2007140651A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • Illumination system Illumination system, illuminating device and forming method thereof
  • the present invention relates to an illumination system, a light-emitting device, and a method of forming the same, and more particularly to an illumination system having a light-emitting diode, a light-emitting device, and a method of forming the same. Background technique
  • LED Light Emitting Diode
  • LED Light Emitting Diode
  • a single-crystal light-emitting diode light-emitting method that is, a single light-emitting diode die is used to mix white phosphors with various phosphors.
  • the current method mainly uses blue light-emitting diode chips and The light emitted by the yellow phosphor is mixed into white light, and the light emitted by the ultraviolet light emitting diode die, the blue phosphor, the green phosphor and the red phosphor is mixed into white light; one is a polycrystalline light emitting diode Square That is, a plurality of LED chips are used to mix white phosphors with various phosphors.
  • the current method mainly uses blue light emitting diodes, green light emitting diodes and red light emitting diodes to mix light into white light;
  • the light-emitting diodes used in the light-emitting diodes have different driving voltages, luminous intensities, temperature characteristics and lifetimes, and in the application, these characteristics need to be matched to each other, which makes the design more difficult, so the produced
  • the cost is also relatively high, so it is currently more inclined to develop toward the direction of single crystal light-emitting diodes.
  • a light-emitting device using a light-emitting diode may have a problem of side light leakage, such as blue light, and thus may have a problem of color shift, and heat dissipation efficiency also needs to be improved.
  • the present invention provides a light emitting device or a light emitting unit, comprising: a substrate; at least one wafer disposed on the substrate; an enclosed structure disposed on the substrate and surrounding the wafer, wherein the annular structure is used for Adjusting the direction of light emitted from the wafer; and a protective layer covering at least the phosphor particle layer, and the height of the protective layer is not higher than the annular structure.
  • the protective layer is a planarization layer.
  • the protective layer covers the wafer and extends to the inner side wall of the annular structure.
  • the height of the protective layer is between 2/3, 1/2 or the height of the annular structure.
  • the ring structure comprises a plastic body and a layer of reflective material formed on the surface of the plastic body.
  • the annular structure is made of a metal material having a reflective surface.
  • the phosphor particle layer includes a plurality of phosphor particles, and at least a portion thereof is coagulated and does not contain an adhesive.
  • the annular structure has a trapezoidal or triangular cross section.
  • the inner side wall of the annular structure is a flat surface or a circular arc surface.
  • the light emitting device of the present invention further includes a lens covering the substrate, the wafer, the protective layer and the annular structure.
  • the lens and the protective layer further comprise a filling layer, which has substantially the same refractive index as the protective layer.
  • the protective layer may also extend to the side wall of the annular structure to increase the adhesion.
  • the annular structure can be used to adjust the direction of light emitted by the wafer, such as shielding, reflecting, collecting, or focusing, the blue light leakage phenomenon on the side of the wafer can be solved, and the problem of color shift of the light can be improved.
  • the ring structure can generally be made of a plastic material, and the surface can be optionally plated with a reflective material such as chromium, nickel, silver, zinc fluoride, or magnesium sulfide.
  • the ring structure is disposed on the same side as the wafer, if a material having a better heat dissipation property, such as a metal material, is selected, the heat dissipation efficiency can be improved.
  • the illuminating device can further include a heat sink disposed under the substrate to achieve a dual heat dissipation effect with the annular structure, wherein the heat sink can be composed of a metal material.
  • the present invention further provides an illumination system, comprising: a plurality of illumination units; and a frame
  • each of the light emitting units comprises: a substrate; one or more wafers disposed above the substrate; a ring structure disposed on the substrate and surrounding the one or more wafers
  • the annular structure is used to adjust the direction of the light emitted by the wafer; and a protective layer covering at least the one or more wafers, and the height of the protective layer is not higher than the annular structure.
  • the area enclosed by the annular structure is square, rectangular, circular or polygonal.
  • the arrangement of the illumination units includes series, parallel, concentric or scroll arrangements.
  • an isolation gap is included between the substrates of the illumination units to avoid heat accumulation.
  • the present invention also provides a method of fabricating a light emitting device, comprising: providing a substrate having at least one wafer thereon; providing a ring structure disposed on the substrate and surrounding the wafer; and having a plurality of phosphor particles and a The liquid of the adhesive is mixed to form a mixed solution; the substrate is placed in the mixed solution to deposit the phosphor particles on the substrate; and the liquid is removed and the substrate is removed, wherein the phosphor particles are agglomerated into a phosphor particle layer and at least Attached to the wafer within the annular structure; and a protective layer is formed to cover the wafer.
  • the method for removing the liquid comprises: using a first removing step to remove the mixed liquid located outside the annular structure, leaving a mixed liquid located in the annular structure; And using a second removing step, removing the liquid of the mixed liquid located in the annular structure, and agglomerating the phosphor particles into a phosphor particle layer and adhering to the wafer and the substrate in the annular structure.
  • the protective layer is a planarization layer, and the height thereof may be selected to be no higher than the annular structure. In principle, the protective layer may be slightly higher than the phosphor particle layer, for example, at a higher height.
  • the thickness of the protective layer is too thick to affect the luminous efficiency and reduce the heat dissipation effect, but the present invention is not limited thereto.
  • the height is only sufficient to cover the wafer to avoid scratching the luminescent particle layer.
  • the material of the protective layer can be selected from a soft polymer material, so that the thermal stress generated when the wafer is illuminated can be offset by its elasticity, thereby protecting the wafer and the connected metal wires. It is also possible that a part of the protective layer penetrates from the surface of the phosphor particle layer into a predetermined depth to increase the surface adhesion.
  • silica gel is taken as an example.
  • a lens may be selectively covered on the above-mentioned light-emitting device or the light-emitting unit, for example, made of epoxy or polyethylene (PE) plastic material, and the film and the protective layer may be selectively filled and protected.
  • ring structure refers to a closed structure.
  • a rectangular, square, or circular annular structure is illustrated as an illustration, but is not intended to limit the scope of the present invention; in other embodiments, the area enclosed by the annular structure is also It may be any other shape, such as a space that fits the backlight module to make a suitable elongated ring structure.
  • the ring structure used in accordance with the present invention in addition to collecting light from the sidewalls of the wafers, is more resistant to heat sinking. That is, through various arrangements of the ring structure, such as parallel arrangement, series arrangement, or concentric arrangement, and the wafers are placed in different ring structures to avoid the centralized configuration of the wafer.
  • the heat is accumulated.
  • each of the light-emitting units is independent, that is, the light-emitting units are not connected to each other by the substrate, but the cutting substrate forms an isolation gap to avoid heat accumulation, and is then individually connected by the frame to form an illumination system.
  • the heat sink disposed under the substrate of the individual light emitting unit can be reused to achieve the so-called "double heat dissipation" effect.
  • the annular structure used in accordance with the present invention also improves the problems of conventional precipitation methods. That is to say, when the phosphor particles settle on the substrate, they are separated into two inner and outer regions by the annular structure, so that the mixed liquid in the outer region can be easily removed, and only part of the mixed liquid remains in the inner region of the annular structure, due to this portion The mixture is much smaller than the original mixture, so that the phosphor layer can be formed faster and attached to the wafer in the ring structure by drying, which also improves the process efficiency.
  • FIG. 1A is a view showing a light emitting device according to a first embodiment of the present invention
  • FIGS. 1B to 1E are diagrams showing a modification of the heat sink of the light-emitting device according to the first embodiment of the present invention
  • Figure 1 is a plan view of Figure 1A;
  • Figure 2B is a plan view showing the wafer array of Figure 1A;
  • Figure 3 is a view showing a modification of the ring structure shown in Figure 1A;
  • FIG. 4 is a view showing a lighting system of a second embodiment of the present invention.
  • Figure 5 is a diagram showing a lighting system of a third embodiment of the present invention.
  • Figure 6 is a diagram showing a lighting system of a fourth embodiment of the present invention
  • Figure 7 is a view showing a lighting system of a fifth embodiment of the present invention
  • Figure 8 is a diagram showing a lighting system of a sixth embodiment of the present invention. detailed description
  • the illumination system the arrangement of the ring structure, the combination of the light-emitting device having the ring structure and the heat sink, and the application of the ring structure in the precipitation method are mainly explained, respectively, but these embodiments are only used for The invention is illustrated and not intended to limit the scope of the invention.
  • Fig. 1A is a view showing a light-emitting device or a light-emitting unit having a ring structure according to a first preferred embodiment of the present invention.
  • Fig. 2A is a plan view showing Fig. 1A.
  • Figure 2B is a top plan view of the wafer array of Figure 1A.
  • Fig. 3 is a view showing a modification of the ring structure shown in Fig. 1A.
  • the illumination device or illumination unit 100 includes a heat sink 112, which is generally constructed of metal.
  • a substrate 102 placed above the heat sink 112 and a single wafer or a plurality of wafers placed above the substrate 102 are exemplified by the wafer array 104.
  • a layer of luminescent particles disposed above the wafer array 104 such as a phosphor particle layer 106.
  • the illumination device can select a protective layer 108 for covering the phosphor particle layer 106, and an annular structure 110 disposed on the substrate 102.
  • the annular structure 110 may be attached to the substrate 102 by an insulating glue; and the annular structure 110 is a closed structure.
  • the wafer array 104, the phosphor particle layer 106, and the protective layer 108 are all located in the ring structure 110.
  • the light emitting unit 100 can constitute an illumination system, and the area enclosed by the annular structure 110 is square, as shown in FIG. 2A.
  • FIG. 2B the configuration of the wafer array 104 below the phosphor particle layer 106 is as shown, surrounded by the annular structure 110.
  • the protective layer 108 may also extend to the sidewalls of the annular structure 110 to increase adhesion.
  • the material of the protective layer can be selected from a soft polymer material, so that the thermal stress generated when the wafer emits light can be offset by the elasticity, thereby protecting the wafer and the connected metal wire, and in addition, a part of the protective layer has It is possible to infiltrate the surface of the phosphor particle layer 106 into a predetermined depth to increase the surface adhesion thereof, and in this embodiment, silica gel is taken as an example.
  • annular structure 110 can be used to adjust the direction of light emitted from the wafer 104, such as shadowing, reflecting, collecting or focusing, the blue light leakage phenomenon on the side of the wafer 104 can be solved, and the color of the light can be improved. Partial problem.
  • the annular structure 110 can generally be a plastic body, and the surface can form a reflective material layer, for example, a reflective material such as chromium, nickel, silver, zinc fluoride or magnesium sulfide is selectively plated.
  • a reflective material such as chromium, nickel, silver, zinc fluoride or magnesium sulfide is selectively plated.
  • annular structure 110 and the wafer 104 are disposed on the same surface, if a material having a better thermal property, such as polishing to form a metal material having a reflective surface, heat dissipation efficiency can be improved.
  • a lens 200 may be selectively covered on the above-mentioned light-emitting device or light-emitting unit, for example, made of glass, epoxy or PE plastic to cover the substrate 102, the wafer 104, the protective layer 108 and the annular structure 110, and in the lens Between 200 and the protective layer 108, a material having the same refractive index as that of the protective layer may be selectively filled as the filling layer 150, such as silica gel.
  • the protective layer 108 is a planarization layer, and the height thereof may be no higher than the annular structure 110. In principle, the protective layer may be slightly higher than the phosphor layer, for example, the selection is low.
  • the height of the annular structure is such as two-thirds, one-half, or a height therebetween to provide a certain protection capability, and at the same time, the thickness of the protective layer 108 is excessively thick to affect the luminous efficiency and reduce the heat dissipation effect, but the present invention does not To be limited thereto, the height is only sufficient to cover the wafer 104 to avoid scratching the phosphor particle layer 106.
  • the phosphor particles in the phosphor particle layer 106 do not contain glue, so that the luminous efficiency can be increased.
  • the number of wafers of the wafer array 104 is determined as needed, for example, single or multiple; in this example, the wafer is a light emitting diode.
  • the substrate 102 is a copper-clad substrate, but an aluminum-clad substrate or an alumina substrate may also be used.
  • the shape of the heat sink 112 is trapezoidal, but may be rectangular or concave and other shapes for facilitating heat dissipation, as shown in FIG. 1B to FIG. 1E.
  • the material of the heat sink 112 such as metal is preferably a material having a high thermal conductivity. .
  • the shape of the area enclosed by the annular structure 110 may be appropriately changed as needed, for example, a rectangle, a circle, or the like; and the shape of the ring structure 110 itself may be arbitrarily changed.
  • the cross-sectional shape may be trapezoidal, triangular or curved, etc., as shown in FIG. 3, and the inner side wall of the annular structure may also be a flat surface or a circular arc surface.
  • the area enclosed by the annular structure may be any other shape, such as a space configured with a backlight module to produce a suitably elongated annular structure.
  • FIG. 4 is a diagram showing a lighting system of a second embodiment of the present invention.
  • the illumination system 400 of the present embodiment is characterized by having a plurality of illumination units 100 shown in FIG. 1A and a frame 410 for connecting the illumination units 100, and the rest are first
  • the examples are similar. That is, a plurality of the light-emitting units 100 shown in Fig. 1A constitute the light-emitting device 400 of the embodiment.
  • the light emitting units 100 have an appropriate gap distance d between each other, and the gap distance d is determined according to the brightness emitted by each of the light emitting units 100 and the generated heat.
  • the number of the light emitting units 100 can be determined according to requirements; and the configurations of the light emitting units 100 can be variously changed.
  • the frame 410 is made of a metal material.
  • the annular structure 110 used in accordance with embodiments of the present invention in addition to collecting light from the sidewalls of the wafers, is more resistant to heat sinking. That is to say, by various arrangements of the ring structure, such as parallel arrangement, series arrangement or concentric arrangement, and the wafers are placed in different ring structures, heat accumulation caused by concentrated configuration of the wafer can be avoided.
  • each of the light-emitting units 100 is independent, that is, the light-emitting units 100 are not connected to each other by a whole substrate, but the cutting substrate forms an isolation gap d, and is individually connected by the frame 410.
  • the illuminating system is constructed so as to avoid heat accumulation and good effect of dispersing the heat source.
  • Fig. 5 is a view showing a lighting system of a third embodiment of the present invention.
  • a single illumination unit 500 can be directly used as the illumination system; or a plurality of illumination units 500 can be arranged in series to form a linear illumination system.
  • Fig. 6 is a view showing a lighting system of a fourth embodiment of the present invention.
  • the light-emitting units 500 are arranged in parallel, the rest are similar to the third embodiment, and details are not described herein again.
  • the plurality of light emitting units 500 are arranged in parallel to form an illumination system 600, and the gap distance d between the light emitting units 500 is determined according to the brightness emitted by each of the light emitting units 500 and the generated heat.
  • Fig. 7 is a view showing a lighting system of a fifth embodiment of the present invention.
  • the shape of the area enclosed by the annular structure 710 is a polygon (for example, an octagon), the rest are similar to the first embodiment, and will not be described again.
  • a single light-emitting unit 700 is directly used as the light-emitting system.
  • the area enclosed by the annular structure 710 may also be circular.
  • Figure 8 is a diagram showing a lighting system of a sixth embodiment of the present invention.
  • the illuminating unit 700 is a vortex arrangement
  • the rest are similar to the fifth embodiment, and details are not described herein again.
  • multiple illuminates The unit 700 is arranged in a vortex to form an illumination system 800, and the gap distance d between the illumination units 700 is determined according to the brightness emitted by each illumination unit 700 and the generated heat.
  • the shape of the area enclosed by the annular structure of the light-emitting unit 700 may also be circular, and the light-emitting units 700 are arranged in a concentric shape (not shown).
  • the wafers are all disposed in the ring structure, and the number of wafers is determined according to the application and needs.
  • the light-emitting device of the first to sixth embodiments may be packaged with a sealing material, but it is preferably not packaged.
  • the present invention provides a method for fabricating a light-emitting diode.
  • the following is a description of the "precipitation method", which is incorporated herein by reference to the applicant's Chinese Patent Application No. 200510008606.0 and the US Patent Application No. 11/059554.
  • the manufacturing method is not limited to this.
  • the manufacturing process of this embodiment includes the following steps, but the order of the steps may be adjusted according to the needs of the process, and is not limited thereto.
  • a substrate 102 is provided, wherein the substrate 102 has at least one wafer 104 thereon, for example, an array of LED chips is fabricated on a copper-clad substrate.
  • a ring structure 110 is provided, placed on the substrate 102 and surrounding the wafer 104, for example, using a glue to secure the plastic ring structure 110 having a chrome-plated reflective surface onto the substrate 102.
  • a plurality of phosphor particles are mixed with a liquid containing no binder to form a mixed solution, and the substrate 102 is placed in the above mixture to cause the phosphor particles to settle on the substrate 102.
  • the substrate 102 can be first placed in a container, and then a plurality of phosphor particles are mixed with a liquid without a binder to form a mixed solution and introduced into the container, thereby allowing the mixture to be mixed.
  • the phosphor particles in the liquid naturally settle on the substrate 102.
  • the liquid is removed and the substrate 102 is taken out, wherein the phosphor particles are agglomerated into a phosphor particle layer 106 and adhered to at least the wafer 104 in the annular structure 110, and a protective layer 108 is formed to cover at least the fluorescent layer.
  • Powder layer 106 is
  • the annular structure 110 used in accordance with an embodiment of the present invention is to increase the efficiency of the conventional precipitation method. That is to say, when the phosphor particles settle on the substrate 102, they are separated into two inner and outer regions by the annular structure 110, and after the preliminary removal of the mixed liquid, only a part of the mixed liquid remains in the inner region of the annular structure 110, The portion of the mixture is much smaller than the original mixture, so that the remaining liquid can be removed more quickly by the drying method to form the phosphor layer 106 and adhere to the wafer in the ring structure 110, thus Improve process efficiency.
  • the specific gravity of the phosphor particles is selected to be larger than the liquid and is preferably insoluble or poorly soluble in the liquid, and the phosphor particles must have stability in the liquid and do not react chemically; then use a stir bar or A tool or instrument such as an ultrasonic oscillator mixes the phosphor particles with the liquid to form a dispersion.
  • the phosphor particles may be composed of a phosphor powder, which may be a sulfide phosphor powder or a non-sulfide phosphor powder; wherein the surface of the sulfide phosphor powder may be coated with a protective layer, such as an organic polymer protective layer, to block the external environment.
  • the influence of water vapor and oxygen on the sulfide phosphors keeps the sulfide phosphors stable;
  • the non-sulfide phosphors can be yttrium aluminum garnet (YAG) phosphors, Qian Lushi? Terbium aluminum garnet (TAG) is a phosphor commonly used in light-emitting diodes such as phosphors, or any other available luminescent powder.
  • YAG yttrium aluminum garnet
  • TAG Terbium aluminum garnet
  • a substrate 102 having a ring structure 110 thereon is placed in the dispersion for a period of time, and the liquid level of the dispersion must be higher than the surface of the substrate, and at least higher than the surface of the substrate. ⁇ above.
  • the phosphor particles in the mixture are directly deposited on the substrate, so the specific gravity of the phosphor particles must be larger than the liquid, otherwise the deposition behavior cannot be performed;
  • the particle size of the phosphor particles is generally 0.1 ⁇ 100 ⁇ , since the manufacturing method uses gravity to directly deposit the phosphor particles on the substrate, if the particle size of the phosphor particles is too small, the deposition time is too long, and the productivity is lowered, and in addition, if the particles of the phosphor particles are If the diameter is too large, the result may result in too poor uniformity of the phosphor layer formed.
  • the luminescent powder accounts for the liquid.
  • the concentration is about 0.001 - lg / ml, preferably 0.01 ⁇ 0.15g / ml. If the concentration is too high, the luminescent powder will be wasted or the phosphor layer formed will be too thick. If the concentration is too low, The deposition time is too long and the resulting phosphor particle layer is too thin.
  • the annular structure can divide the settled phosphor particles into two zones, inner and outer. Wherein, before the deposition process, the surface of the substrate in the annular structure has been formed with an array of crystals, such as an array of light emitting diodes.
  • the liquid in the above system is initially removed, for example, by removing and/or discharging, the liquid is removed, leaving only a part of the mixed liquid on the substrate in the ring structure, and then using the rapid drying method to form the phosphor particles.
  • the layers are attached to the substrate or to a substrate within the annular structure. The above method of removing the liquid does not interfere with the phosphor particle layer, otherwise the ideal phosphor particle layer cannot be formed, and the temperature setting of the drying step is selected to be greater than volatilizing the liquid.
  • the temperature is less than the temperature at which the substrate such as crystals is destroyed, or the luminescent powder is deteriorated, for example, about 40 to 300 degrees Celsius, wherein if the drying temperature is too low, the drying time is too long or cannot be dried. If the drying temperature is too high, not only will the substrate or the luminescent powder be deteriorated, but the poor quality phosphor granules will be produced to lower the yield, and the luminescent powder dispersion will be caused by the intense boiling phenomenon. Stirred to get the ideal phosphor Granular layer.
  • the drying step is to remove the liquid in the luminescent powder.
  • the drying step may include a first drying step and a second drying step.
  • the liquid is slowly volatilized using a lower temperature, which is preferably lower than the boiling point of the liquid used.
  • a higher temperature drying step is performed to completely evaporate the liquid in the luminescent powder film, and the drying temperature is better. It can be selected to be less than 300 degrees Celsius, wherein the temperature is set to avoid deterioration of the substrate or the luminescent powder, and is not limited to 300 degrees.
  • a protective layer 108 may be further formed on the phosphor particle layer 106 to form a better protection for the phosphor particle layer.
  • the protective layer 108 may be an organic polymer material and may be formed by coating or the like. On the phosphor particle layer, it can also extend to the inside of the ring structure to increase adhesion.
  • the liquid to be used is preferably insoluble, insoluble, stable, and chemically incompatible with the luminescent powder.
  • the liquid may be water, an alcohol, a ketone or an ether.
  • the alcohol may be ethanol
  • the ketone may be acetone
  • the ether may be diethyl ether.
  • illuminating device 102 substrate

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  • Manufacturing & Machinery (AREA)
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Abstract

La présente invention concerne un système et un appareil électroluminescents, et leur procédé de formation, le système comprenant une pluralité d'unités électroluminescentes (100) et un cadre pour raccorder les unités électroluminescentes. Chaque unité électroluminescente comprend un substrat (102), une ou plusieurs puces (104) disposées sur le substrat, un élément annulaire (110) disposé sur le substrat et entourant les puces, l'élément annulaire utilisé pour ajuster la direction de la lumière émise par les puces, ainsi qu'une couche protectrice (108) couvrant les puces ; la hauteur de la couche protectrice est au maximum de celle de l'élément annulaire.
PCT/CN2006/001248 2006-06-08 2006-06-08 Système et appareil électroluminescents et leur procédé de formation WO2007140651A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/303,916 US7989823B2 (en) 2006-06-08 2006-06-08 Light emitting system, light emitting apparatus and forming method thereof
PCT/CN2006/001248 WO2007140651A1 (fr) 2006-06-08 2006-06-08 Système et appareil électroluminescents et leur procédé de formation
TW095137428A TW200802963A (en) 2006-06-08 2006-10-05 Light emitting system, light emitting device and fabrication method thereof
PCT/CN2006/002625 WO2007140660A1 (fr) 2006-06-08 2006-10-08 Système émetteur de lumière, dispositif émetteur de lumière et leur procédé de fabrication

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Application Number Priority Date Filing Date Title
PCT/CN2006/001248 WO2007140651A1 (fr) 2006-06-08 2006-06-08 Système et appareil électroluminescents et leur procédé de formation

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WO2007140651A1 true WO2007140651A1 (fr) 2007-12-13

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