CN1540773A - 带有具有冷却功能的反射器的半导体发光器件 - Google Patents
带有具有冷却功能的反射器的半导体发光器件 Download PDFInfo
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- CN1540773A CN1540773A CNA031369413A CN03136941A CN1540773A CN 1540773 A CN1540773 A CN 1540773A CN A031369413 A CNA031369413 A CN A031369413A CN 03136941 A CN03136941 A CN 03136941A CN 1540773 A CN1540773 A CN 1540773A
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- light emitting
- light
- reflector
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000001816 cooling Methods 0.000 title claims 2
- 239000000463 material Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000004020 luminiscence type Methods 0.000 claims description 41
- 229920005989 resin Polymers 0.000 claims description 38
- 239000011347 resin Substances 0.000 claims description 38
- 230000004308 accommodation Effects 0.000 claims description 28
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000049 pigment Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0025980 | 2003-04-24 | ||
KR1020030025980A KR20040092512A (ko) | 2003-04-24 | 2003-04-24 | 방열 기능을 갖는 반사판이 구비된 반도체 발광장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1540773A true CN1540773A (zh) | 2004-10-27 |
Family
ID=33297342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA031369413A Pending CN1540773A (zh) | 2003-04-24 | 2003-05-23 | 带有具有冷却功能的反射器的半导体发光器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6909123B2 (zh) |
JP (1) | JP2004327863A (zh) |
KR (1) | KR20040092512A (zh) |
CN (1) | CN1540773A (zh) |
TW (1) | TW595019B (zh) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2007140651A1 (fr) * | 2006-06-08 | 2007-12-13 | Hong-Yuan Technology Co., Ltd | Système et appareil électroluminescents et leur procédé de formation |
WO2008043207A1 (en) * | 2006-10-08 | 2008-04-17 | Hong-Yuan Technology Co., Ltd. | Light emitting system, light emitting apparatus and forming method thereof |
CN100386893C (zh) * | 2003-09-30 | 2008-05-07 | 西铁城电子股份有限公司 | 发光二极管 |
CN100433390C (zh) * | 2005-07-04 | 2008-11-12 | 三星电机株式会社 | 具有改进的侧壁反射结构的侧光发光二极管 |
CN101095228B (zh) * | 2004-12-30 | 2010-05-12 | 奥斯兰姆奥普托半导体有限责任公司 | 用于冷却半导体元件特别是光电子半导体元件的冷却装置 |
CN101222010B (zh) * | 2007-01-11 | 2010-06-09 | 采钰科技股份有限公司 | 光电元件封装结构及其封装方法 |
CN102221157A (zh) * | 2011-06-28 | 2011-10-19 | 林健洪 | Led灯具散热结构 |
CN102299249A (zh) * | 2010-06-26 | 2011-12-28 | 旭明光电股份有限公司 | 具有独立电传与热传路径的发光二极管及其制造方法 |
CN102339927A (zh) * | 2010-07-27 | 2012-02-01 | 展晶科技(深圳)有限公司 | 发光二极管 |
CN102376861A (zh) * | 2010-08-16 | 2012-03-14 | 富士胶片株式会社 | 用于led的放热反射板 |
CN101261985B (zh) * | 2007-02-12 | 2013-08-14 | 克里公司 | 形成封装的具有多个光学元件的半导体发光器件的方法 |
CN103311422A (zh) * | 2012-03-12 | 2013-09-18 | 隆达电子股份有限公司 | 发光二极管元件 |
CN108336075A (zh) * | 2017-01-20 | 2018-07-27 | 光宝光电(常州)有限公司 | 发光二极管封装结构、发光二极管封装模块及其成形方法 |
US10877346B2 (en) | 2016-03-24 | 2020-12-29 | Saturn Licensing Llc | Light-emitting device, display apparatus, and illumination apparatus |
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US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
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US7397177B2 (en) * | 2003-09-25 | 2008-07-08 | Matsushita Electric Industrial Co., Ltd. | LED lamp and method for manufacturing the same |
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US7157744B2 (en) * | 2003-10-29 | 2007-01-02 | M/A-Com, Inc. | Surface mount package for a high power light emitting diode |
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- 2003-04-25 JP JP2003122701A patent/JP2004327863A/ja active Pending
- 2003-05-23 CN CNA031369413A patent/CN1540773A/zh active Pending
- 2003-05-23 TW TW092114055A patent/TW595019B/zh not_active IP Right Cessation
- 2003-05-27 US US10/445,972 patent/US6909123B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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US6909123B2 (en) | 2005-06-21 |
TW595019B (en) | 2004-06-21 |
KR20040092512A (ko) | 2004-11-04 |
TW200423431A (en) | 2004-11-01 |
US20040211970A1 (en) | 2004-10-28 |
JP2004327863A (ja) | 2004-11-18 |
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