TWI452666B - 半導體封裝及使用其之行動裝置 - Google Patents

半導體封裝及使用其之行動裝置 Download PDF

Info

Publication number
TWI452666B
TWI452666B TW100125010A TW100125010A TWI452666B TW I452666 B TWI452666 B TW I452666B TW 100125010 A TW100125010 A TW 100125010A TW 100125010 A TW100125010 A TW 100125010A TW I452666 B TWI452666 B TW I452666B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor package
cut
interposer substrate
channel
Prior art date
Application number
TW100125010A
Other languages
English (en)
Chinese (zh)
Other versions
TW201214651A (en
Inventor
山田啟壽
山崎尚
福田昌利
小鹽康弘
Original Assignee
東芝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝股份有限公司 filed Critical 東芝股份有限公司
Publication of TW201214651A publication Critical patent/TW201214651A/zh
Application granted granted Critical
Publication of TWI452666B publication Critical patent/TWI452666B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/261—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
    • H10W42/276—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/657—Shapes or dispositions of interconnections on sidewalls or bottom surfaces of the package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/401—Marks applied to devices, e.g. for alignment or identification for identification or tracking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/607—Located on parts of packages, e.g. on encapsulations or on package substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
TW100125010A 2010-07-15 2011-07-14 半導體封裝及使用其之行動裝置 TWI452666B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010160980 2010-07-15

Publications (2)

Publication Number Publication Date
TW201214651A TW201214651A (en) 2012-04-01
TWI452666B true TWI452666B (zh) 2014-09-11

Family

ID=45467374

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100125010A TWI452666B (zh) 2010-07-15 2011-07-14 半導體封裝及使用其之行動裝置
TW103120236A TWI538151B (zh) 2010-07-15 2011-07-14 半導體裝置及使用其之行動通信機器

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103120236A TWI538151B (zh) 2010-07-15 2011-07-14 半導體裝置及使用其之行動通信機器

Country Status (4)

Country Link
US (2) US9362196B2 (https=)
JP (2) JP5820172B2 (https=)
CN (2) CN104362131B (https=)
TW (2) TWI452666B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI874806B (zh) * 2016-03-14 2025-03-01 新加坡商安靠科技新加坡控股私人有限公司 半導體裝置以及其製造方法
TWI913831B (zh) 2016-03-14 2026-02-01 新加坡商安靠科技新加坡控股私人有限公司 半導體裝置以及其製造方法

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362196B2 (en) 2010-07-15 2016-06-07 Kabushiki Kaisha Toshiba Semiconductor package and mobile device using the same
JP2012151326A (ja) 2011-01-20 2012-08-09 Toshiba Corp 半導体装置の製造方法、半導体装置及び電子部品のシールド方法
JP5512566B2 (ja) 2011-01-31 2014-06-04 株式会社東芝 半導体装置
CN103219295B (zh) * 2012-01-20 2015-12-16 环旭电子股份有限公司 适形掩模封装结构及检测方法
JP2013161831A (ja) * 2012-02-01 2013-08-19 Mitsumi Electric Co Ltd 電子モジュール及びその製造方法
JP5703245B2 (ja) 2012-02-28 2015-04-15 株式会社東芝 無線装置、それを備えた情報処理装置および記憶装置
US8766654B2 (en) * 2012-03-27 2014-07-01 Universal Scientific Industrial Co., Ltd. Package structure with conformal shielding and inspection method using the same
JP5710558B2 (ja) 2012-08-24 2015-04-30 株式会社東芝 無線装置、それを備えた情報処理装置及び記憶装置
JP6498118B2 (ja) * 2012-09-20 2019-04-10 シレゴ・テクノロジー・インコーポレーテッドＳｉｌｅｇｏ Ｔｅｃｈｎｏｌｏｇｙ Ｉｎｃｏｒｐｏｒａｔｅｄ デバイスおよび方法
JP5779227B2 (ja) 2013-03-22 2015-09-16 株式会社東芝 半導体装置の製造方法
KR101812085B1 (ko) * 2013-05-02 2017-12-27 후지필름 가부시키가이샤 에칭액 및 에칭액의 키트, 이를 이용한 에칭 방법 및 반도체 기판 제품의 제조 방법
JP5549769B1 (ja) * 2013-08-26 2014-07-16 Ｔｄｋ株式会社 モジュール部品の製造方法
JP5684349B1 (ja) * 2013-09-10 2015-03-11 株式会社東芝 半導体装置および半導体装置の検査方法
JP6418625B2 (ja) * 2013-12-13 2018-11-07 東芝メモリ株式会社 半導体装置の製造方法
JP6199724B2 (ja) 2013-12-13 2017-09-20 東芝メモリ株式会社 半導体装置の製造方法
JP6163421B2 (ja) * 2013-12-13 2017-07-12 株式会社東芝 半導体装置、および、半導体装置の製造方法
JP2015115558A (ja) * 2013-12-13 2015-06-22 株式会社東芝 半導体装置
JP6190264B2 (ja) 2013-12-13 2017-08-30 東芝メモリ株式会社 半導体製造装置
JP2015115552A (ja) 2013-12-13 2015-06-22 株式会社東芝 半導体装置およびその製造方法
JP6088964B2 (ja) 2013-12-13 2017-03-01 株式会社東芝 半導体製造装置
JP6219155B2 (ja) * 2013-12-13 2017-10-25 東芝メモリ株式会社 半導体装置の製造方法
KR102245134B1 (ko) * 2014-04-18 2021-04-28 삼성전자 주식회사 반도체 칩을 구비하는 반도체 패키지
WO2015194435A1 (ja) * 2014-06-20 2015-12-23 株式会社村田製作所 回路モジュール及びその製造方法
WO2016121491A1 (ja) * 2015-01-30 2016-08-04 株式会社村田製作所 電子回路モジュール
JP2016192445A (ja) 2015-03-30 2016-11-10 株式会社東芝 メモリ装置
WO2016181706A1 (ja) 2015-05-14 2016-11-17 株式会社村田製作所 電子回路モジュール
US9570406B2 (en) * 2015-06-01 2017-02-14 Qorvo Us, Inc. Wafer level fan-out with electromagnetic shielding
CN107924908B (zh) * 2015-07-13 2020-10-23 莱尔德电子材料(深圳)有限公司 具有定制着色的外表面的热管理和/或emi减轻材料
JP6418605B2 (ja) * 2015-07-31 2018-11-07 東芝メモリ株式会社 半導体装置および半導体装置の製造方法
US10535611B2 (en) * 2015-11-20 2020-01-14 Apple Inc. Substrate-less integrated components
JP2017168704A (ja) * 2016-03-17 2017-09-21 東芝メモリ株式会社 半導体装置の製造方法および半導体装置
JP6407186B2 (ja) * 2016-03-23 2018-10-17 Tdk株式会社 電子回路パッケージ
JP6107998B1 (ja) * 2016-03-23 2017-04-05 Tdk株式会社 電子回路パッケージ
JP6741456B2 (ja) * 2016-03-31 2020-08-19 Fdk株式会社 多層回路基板
KR20170127324A (ko) * 2016-05-11 2017-11-21 (주)제이티 반도체소자 캐리어, 이의 제조방법 및 이를 포함하는 소자핸들러
JP6832666B2 (ja) 2016-09-30 2021-02-24 株式会社ディスコ 半導体パッケージの製造方法
JP6800745B2 (ja) 2016-12-28 2020-12-16 株式会社ディスコ 半導体パッケージの製造方法
JP6602324B2 (ja) 2017-01-17 2019-11-06 株式会社東芝 無線装置
JP6815880B2 (ja) 2017-01-25 2021-01-20 株式会社ディスコ 半導体パッケージの製造方法
US9831197B1 (en) * 2017-02-02 2017-11-28 Sigurd Microelectronics Corp. Wafer-level package with metal shielding structure and the manufacturing method thereof
JP6602326B2 (ja) * 2017-02-06 2019-11-06 株式会社東芝 無線装置
JP2018170419A (ja) 2017-03-30 2018-11-01 太陽誘電株式会社 電子部品モジュール
JP6689780B2 (ja) 2017-03-30 2020-04-28 太陽誘電株式会社 電子部品モジュールの製造方法
JP6887326B2 (ja) 2017-06-28 2021-06-16 株式会社ディスコ 半導体パッケージの形成方法
JP6999350B2 (ja) 2017-10-05 2022-01-18 株式会社ディスコ パッケージ基板の加工方法
JP2019087638A (ja) * 2017-11-07 2019-06-06 住友ベークライト株式会社 電子装置の製造方法
JP2019087639A (ja) * 2017-11-07 2019-06-06 住友ベークライト株式会社 電子装置の製造方法
JP6776280B2 (ja) * 2018-01-10 2020-10-28 株式会社東芝 無線通信モジュール、プリント基板、および製造方法
CN111727502B (zh) 2018-02-15 2024-07-12 株式会社村田制作所 高频模块
JP7193920B2 (ja) 2018-03-09 2022-12-21 株式会社ディスコ パッケージ基板の加工方法
JP7093210B2 (ja) 2018-03-28 2022-06-29 株式会社ディスコ 板状物の加工方法
US20190318984A1 (en) * 2018-04-17 2019-10-17 STATS ChipPAC Pte. Ltd. Semiconductor Device and Method of Forming Conductive Vias to Have Enhanced Contact to Shielding Layer
KR102240705B1 (ko) * 2018-10-11 2021-04-15 삼성전기주식회사 전자 부품
KR102675853B1 (ko) * 2018-11-21 2024-06-14 타츠타 전선 주식회사 차폐 패키지
KR102652484B1 (ko) * 2019-08-20 2024-03-29 삼성디스플레이 주식회사 전자 장치 및 이의 제조 방법
US11139224B2 (en) * 2019-12-05 2021-10-05 Qualcomm Incorporated Package comprising a substrate having a via wall configured as a shield
US12381160B2 (en) 2020-03-19 2025-08-05 Intel Corporation Memory device package with noise shielding
US11605598B2 (en) * 2020-04-17 2023-03-14 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
DE112020007228T5 (de) * 2020-05-22 2023-03-09 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
CN113973484B (zh) * 2020-07-24 2025-07-25 广州方邦电子股份有限公司 一种屏蔽膜及线路板
CN112563247B (zh) * 2021-02-24 2022-04-22 甬矽电子(宁波)股份有限公司 一种电磁屏蔽封装结构和电磁屏蔽封装方法
US12132010B2 (en) * 2021-04-08 2024-10-29 GM Global Technology Operations LLC Metal-coated, polymer-encapsulated electronics modules and methods for making the same
JP2024039842A (ja) * 2022-09-12 2024-03-25 キオクシア株式会社 半導体装置、及び半導体装置の製造方法
US20240155769A1 (en) * 2022-11-08 2024-05-09 Ricoh Company, Ltd. Method for forming functional layer, method for manufacturing electronic component, and electronic component including functional layer

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115578A (ja) * 2001-10-05 2003-04-18 Canon Inc 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ
US20050157476A1 (en) * 2004-01-16 2005-07-21 Vahid Goudarzi Populated printed wiring board and method of manufacture
TW200614493A (en) * 2004-10-21 2006-05-01 Chipmos Technologies Inc Low noise multi chip image sensor package
JP2007012641A (ja) * 2005-06-28 2007-01-18 Matsushita Electric Ind Co Ltd 半導体素子実装方法および半導体素子実装装置
JP2007134493A (ja) * 2005-11-10 2007-05-31 Fujifilm Corp 半導体素子のパッケージ
TW200832654A (en) * 2007-01-26 2008-08-01 Advanced Semiconductor Eng Semiconductor package for electromagnetic shielding
TW200832669A (en) * 2007-01-26 2008-08-01 Advanced Semiconductor Eng Semiconductor package having electromagnetic shielding cap
TW200847383A (en) * 2007-05-30 2008-12-01 Advanced Semiconductor Eng EMI shielded semiconductor package and method for manufacturing the same
US20090218484A1 (en) * 2006-01-13 2009-09-03 Ionics Mass Spectrometry Group Inc. Concentrating mass spectrometer ion guide, spectrometer and method

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047898A (en) * 1989-11-13 1991-09-10 International Business Machines Corporation Deflectable contact for providing positive surface contact for shielding electromagnetic interference
JP3432982B2 (ja) * 1995-12-13 2003-08-04 沖電気工業株式会社 表面実装型半導体装置の製造方法
JPH09223761A (ja) 1996-02-15 1997-08-26 Nitto Denko Corp 半導体装置およびその製造方法
JPH10284873A (ja) 1997-04-04 1998-10-23 Hitachi Ltd 半導体集積回路装置およびｉｃカードならびにその製造に用いるリードフレーム
JP3406817B2 (ja) * 1997-11-28 2003-05-19 株式会社東芝 金属層へのマーク付け方法および半導体装置
JP2002353349A (ja) 2001-05-24 2002-12-06 Kyocera Corp 電子部品収納用パッケージの蓋体およびこれを用いた電子部品収納用パッケージ
TW552689B (en) * 2001-12-21 2003-09-11 Siliconware Precision Industries Co Ltd High electrical characteristic and high heat dissipating BGA package and its process
US6998532B2 (en) * 2002-12-24 2006-02-14 Matsushita Electric Industrial Co., Ltd. Electronic component-built-in module
JP2004297554A (ja) 2003-03-27 2004-10-21 Seiko Epson Corp 圧電発振器及び圧電発振器を利用した携帯電話装置および圧電発振器を利用した電子機器
JP2006190767A (ja) * 2005-01-05 2006-07-20 Shinko Electric Ind Co Ltd 半導体装置
JP2006278805A (ja) * 2005-03-30 2006-10-12 Elpida Memory Inc 半導体装置
JP2009033114A (ja) * 2007-06-29 2009-02-12 Tdk Corp 電子モジュール、及び電子モジュールの製造方法
EP2009692A1 (en) * 2007-06-29 2008-12-31 TDK Corporation Electronic module and fabrication method thereof
US8212339B2 (en) * 2008-02-05 2012-07-03 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US7989928B2 (en) * 2008-02-05 2011-08-02 Advanced Semiconductor Engineering Inc. Semiconductor device packages with electromagnetic interference shielding
JP2009218484A (ja) 2008-03-12 2009-09-24 Tdk Corp 電子モジュール、および電子モジュールの製造方法
US20100020518A1 (en) * 2008-07-28 2010-01-28 Anadigics, Inc. RF shielding arrangement for semiconductor packages
JP5324191B2 (ja) 2008-11-07 2013-10-23 ルネサスエレクトロニクス株式会社 半導体装置
JP2010153607A (ja) * 2008-12-25 2010-07-08 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US20100207257A1 (en) * 2009-02-17 2010-08-19 Advanced Semiconductor Engineering, Inc. Semiconductor package and manufacturing method thereof
JP2010197758A (ja) * 2009-02-25 2010-09-09 Seiko Epson Corp 画像形成装置および潜像担持体ユニット
US8212340B2 (en) * 2009-07-13 2012-07-03 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8378466B2 (en) * 2009-11-19 2013-02-19 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with electromagnetic interference shielding
US8030750B2 (en) * 2009-11-19 2011-10-04 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8368185B2 (en) * 2009-11-19 2013-02-05 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
JP2011124413A (ja) 2009-12-11 2011-06-23 Murata Mfg Co Ltd 電子部品モジュールの製造方法及び電子部品モジュール
US9362196B2 (en) * 2010-07-15 2016-06-07 Kabushiki Kaisha Toshiba Semiconductor package and mobile device using the same

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115578A (ja) * 2001-10-05 2003-04-18 Canon Inc 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ
US20050157476A1 (en) * 2004-01-16 2005-07-21 Vahid Goudarzi Populated printed wiring board and method of manufacture
US7167375B2 (en) * 2004-01-16 2007-01-23 Motorola, Inc. Populated printed wiring board and method of manufacture
TW200614493A (en) * 2004-10-21 2006-05-01 Chipmos Technologies Inc Low noise multi chip image sensor package
JP2007012641A (ja) * 2005-06-28 2007-01-18 Matsushita Electric Ind Co Ltd 半導体素子実装方法および半導体素子実装装置
JP2007134493A (ja) * 2005-11-10 2007-05-31 Fujifilm Corp 半導体素子のパッケージ
US20090218484A1 (en) * 2006-01-13 2009-09-03 Ionics Mass Spectrometry Group Inc. Concentrating mass spectrometer ion guide, spectrometer and method
TW200832654A (en) * 2007-01-26 2008-08-01 Advanced Semiconductor Eng Semiconductor package for electromagnetic shielding
TW200832669A (en) * 2007-01-26 2008-08-01 Advanced Semiconductor Eng Semiconductor package having electromagnetic shielding cap
TW200847383A (en) * 2007-05-30 2008-12-01 Advanced Semiconductor Eng EMI shielded semiconductor package and method for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI874806B (zh) * 2016-03-14 2025-03-01 新加坡商安靠科技新加坡控股私人有限公司 半導體裝置以及其製造方法
TWI913831B (zh) 2016-03-14 2026-02-01 新加坡商安靠科技新加坡控股私人有限公司 半導體裝置以及其製造方法
US12550766B2 (en) 2016-03-14 2026-02-10 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP5820172B2 (ja) 2015-11-24
CN102339817A (zh) 2012-02-01
JP6412844B2 (ja) 2018-10-24
JP2015233164A (ja) 2015-12-24
US9362196B2 (en) 2016-06-07
CN104362131B (zh) 2018-08-28
TW201214651A (en) 2012-04-01
CN102339817B (zh) 2015-03-25
CN104362131A (zh) 2015-02-18
US9721905B2 (en) 2017-08-01
JP2012039104A (ja) 2012-02-23
TW201438180A (zh) 2014-10-01
US20160276290A1 (en) 2016-09-22
TWI538151B (zh) 2016-06-11
US20120015687A1 (en) 2012-01-19

Similar Documents

Publication Publication Date Title
TWI452666B (zh) 半導體封裝及使用其之行動裝置
JP5512566B2 (ja) 半導体装置
JP6219155B2 (ja) 半導体装置の製造方法
CN104425459B (zh) 半导体装置及半导体装置的检查方法
CN104716104B (zh) 半导体装置以及半导体装置的制造方法
KR101046250B1 (ko) 반도체 패키지의 전자파 차폐장치
JP2012160576A (ja) 半導体装置およびその製造方法
JP5779265B2 (ja) 半導体装置
JP5726553B2 (ja) 半導体装置の製造方法および半導体装置
JP2015084456A (ja) 半導体装置
JP2015073135A (ja) 半導体装置の製造方法