JP6418625B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6418625B2 JP6418625B2 JP2013258660A JP2013258660A JP6418625B2 JP 6418625 B2 JP6418625 B2 JP 6418625B2 JP 2013258660 A JP2013258660 A JP 2013258660A JP 2013258660 A JP2013258660 A JP 2013258660A JP 6418625 B2 JP6418625 B2 JP 6418625B2
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Description
Claims (6)
- 複数の半導体素子が搭載された配線基板の前記半導体素子を搭載した面と、複数の前記半導体素子とを、封止樹脂を用いて封止し、
ブレードを用いて、水を前記封止された配線基板に供給して前記封止された配線基板を切断することにより、前記封止樹脂を粗化して前記各々の半導体装置に分離し、
分離後の前記半導体装置を水の沸点以上の温度、かつ、大気酸素濃度よりも低い酸素濃度の雰囲気中で加熱し、
加熱後の前記半導体装置の前記封止樹脂表面と前記配線基板の切断面とに対し、金属スパッタによりシールド層を形成する半導体装置の製造方法であって、
前記配線基板の切断面の一部は配線パターンであり、前記加熱後に前記配線パターンと前記シールド層間に形成される酸化膜の厚さは50nm未満であることを特徴とする半導体装置の製造方法。 - 前記半導体装置の加熱は、不活性ガス中にて加熱する、請求項1に記載の半導体装置の製造方法。
- 前記半導体装置の加熱は、酸素濃度が1%以下の雰囲気中にて加熱する、請求項1または2に記載の半導体装置の製造方法。
- 前記シールド層はCuを含む、請求項1ないし3のいずれか1項に記載の半導体装置の製造方法。
- 各々の半導体装置に分離した後、前記シールド層を形成する前に、レーザを用いて前記封止樹脂表面にマークする、請求項1ないし4のいずれか1項に記載の半導体装置の製造方法。
- 前記シールド層を形成する前に、前記封止樹脂を逆スパッタする、請求項1ないし5のいずれか1項に記載の半導体装置の製造方法。
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JP2013258660A JP6418625B2 (ja) | 2013-12-13 | 2013-12-13 | 半導体装置の製造方法 |
TW103123686A TWI624026B (zh) | 2013-12-13 | 2014-07-09 | Semiconductor device manufacturing method |
US14/474,670 US20150170988A1 (en) | 2013-12-13 | 2014-09-02 | Method of manufacturing semiconductor apparatus |
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KR20160040927A (ko) * | 2014-10-06 | 2016-04-15 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
JP6480823B2 (ja) * | 2015-07-23 | 2019-03-13 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
JP6887722B2 (ja) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | ウェーハの加工方法及び切削装置 |
JP6800745B2 (ja) * | 2016-12-28 | 2020-12-16 | 株式会社ディスコ | 半導体パッケージの製造方法 |
JP7056226B2 (ja) | 2018-02-27 | 2022-04-19 | Tdk株式会社 | 回路モジュール |
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US20150170988A1 (en) | 2015-06-18 |
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