JP2011171539A - モジュールの製造方法 - Google Patents
モジュールの製造方法 Download PDFInfo
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Abstract
【解決手段】樹脂基板22に実装された半導体素子24が埋設された樹脂部25と、この樹脂部25の表面を覆うシールド金属膜26とを有した高周波モジュール21の製造方法であり、樹脂槽63の上方に半導体素子24が下方を向く方向で樹脂基板22を載置し、樹脂槽63へ投入された樹脂25aが流動可能となるまで軟化させる軟化工程71と、樹脂基板22下面を樹脂25aの液面へ接触させる浸漬工程72と、樹脂25aを樹脂基板22と半導体素子24との間の隙間へ強制的に流入させる圧縮流入工程73と、樹脂25aを硬化する硬化工程74と、シールド金属膜26を形成する工程とを有し、このシールド金属膜26を形成する工程ではスパッタによって樹脂部25の表面に金属薄膜を形成する。これにより、樹脂部25内の残留応力を小さくでき、シールド金属膜26のストレスを小さくできる。
【選択図】図1
Description
図1は、本実施の形態における高周波モジュール21の断面図である。なお図1において、図6と同じものには同じ番号を用い、その説明は簡略化している。図1において、樹脂基板22は、ガラス・エポキシ基材の多層基板であり、本実施の形態における樹脂基板22には厚みが0.2mmの4層基板を用いている。
22 樹脂基板
24 半導体素子
25 樹脂部
26 シールド金属膜
51 実装工程
52 樹脂部形成工程
54 シールド金属膜形成工程
63 樹脂槽
71 軟化工程
72 浸漬工程
73 圧縮流入工程
Claims (9)
- 樹脂基板と、この樹脂基板上に装着された電子部品と、この電子部品が埋設されるとともに、前記樹脂基板の少なくとも上面に形成された樹脂部と、この樹脂部の表面を覆うシールド金属膜とを有し、前記電子部品によって前記樹脂基板上に回路が形成されたモジュールの製造方法において、前記樹脂基板の上面に前記電子部品を装着して前記樹脂基板上に回路を形成し、その後で樹脂槽の上方に電子部品が下方を向く方向で樹脂基板を載置し、前記樹脂槽へ投入された非流動状態の前記樹脂が流動可能となるまで軟化させるとともに、前記樹脂基板と前記樹脂との間に形成される空間の空気を吸引し、その後で前記電子部品を前記軟化した樹脂へ浸漬するとともに、前記基板下面を前記樹脂の液面へ接触させ、その後で前記樹脂を圧縮して、前記樹脂を前記樹脂基板と前記電子部品との間の隙間へ強制的に流入させ、その後で前記樹脂を硬化して前記樹脂基板上に前記樹脂部を形成し、その後でシールド金属膜を形成する工程を設け、このシールド金属膜を形成する工程ではスパッタによって前記樹脂部の表面に金属薄膜を形成するモジュールの製造方法。
- 前記樹脂には第1の温度範囲内では流動性を有せず、この第1の温度より高い第2の温度範囲内では流動性を生じ、この第2の温度より高い温度で硬化する熱硬化性樹脂を用いるとともに、電子部品と樹脂基板との間の接続には前記第2の温度範囲よりも高い融点のはんだを用い、前記樹脂を強制的に流入させる工程における前記樹脂は第2の温度範囲内とした請求項1に記載のモジュールの製造方法。
- 前記樹脂を硬化する工程では、前記樹脂に圧力を印加しつつ前記樹脂が前記第2の温度範囲を超える温度にまで加熱する請求項1に記載のモジュールの製造方法。
- 樹脂基板にはグランドパターンが形成され、前記樹脂基板の側面には前記グランドパターンの露出部が形成され、この露出部において前記グランドパターンと前記シールド金属膜とが接続されたモジュールにおいて、前記樹脂を硬化する工程と前記シールド金属膜を形成する工程との間には、前記樹脂部の側面を形成するとともに前記グランドパターンの露出部を露出させる工程を設け、前記シールド金属膜を形成する工程では前記露出部においてシールド金属膜と前記グランドパターンとを接続する請求項3に記載のモジュールの製造方法。
- 樹脂基板は、ガラス基材の多層基板とするとともに、前記グランドパターンは前記樹脂基板の内層に形成された請求項4に記載のモジュールの製造方法
- 電子部品を装着する工程では、複数個の前記樹脂基板が連結部で連結された状態で前記電子部品を装着し、露出部を露出させる工程では、前記連結部を切断する請求項5に記載のモジュールの製造方法。
- 電子部品を装着する工程では、複数個の前記樹脂基板が連結部で連結された状態で前記電子部品を装着し、シールド金属膜を形成する工程の後で、前記連結部を切断する請求項5に記載のモジュールの製造方法。
- 樹脂基板上には、電子部品によって高周波回路が形成された請求項6または7に記載のモジュールの製造方法。
- 半導体素子には高周波回路の一部が形成された請求項8に記載のモジュールの製造方法。
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JP2010034460A JP2011171539A (ja) | 2010-02-19 | 2010-02-19 | モジュールの製造方法 |
CN2011800100184A CN102763206A (zh) | 2010-02-19 | 2011-02-09 | 模块的制造方法 |
PCT/JP2011/000718 WO2011102095A1 (ja) | 2010-02-19 | 2011-02-09 | モジュールの製造方法 |
US13/589,782 US20120304460A1 (en) | 2010-02-19 | 2012-08-20 | Module manufacturing method |
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Cited By (8)
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JP2012028484A (ja) * | 2010-07-22 | 2012-02-09 | Panasonic Corp | モジュールと、その製造方法 |
JP2014056880A (ja) * | 2012-09-11 | 2014-03-27 | Nec Corp | モジュール部品及びその製造方法 |
JP2014183180A (ja) * | 2013-03-19 | 2014-09-29 | Tdk Corp | 電子部品モジュール及びその製造方法 |
JP2015115553A (ja) * | 2013-12-13 | 2015-06-22 | 株式会社東芝 | 半導体装置の製造方法 |
KR101834048B1 (ko) * | 2015-04-28 | 2018-03-02 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 패키지용 몰딩층의 형성 방법 |
JP2018107435A (ja) * | 2016-12-27 | 2018-07-05 | パッケージング・エス・イ・ペ | 密封電子モジュールのウェーハスケール製造のための工程 |
KR20200067420A (ko) * | 2018-12-04 | 2020-06-12 | 주식회사 유라코퍼레이션 | 인쇄회로기판 및 그 생산 방법 |
KR20200085245A (ko) * | 2020-06-26 | 2020-07-14 | 주식회사 유라코퍼레이션 | 인쇄회로기판 |
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US9059155B2 (en) | 2013-03-14 | 2015-06-16 | Infineon Technologies Austria Ag | Chip package and method for manufacturing the same |
KR20160138754A (ko) * | 2015-05-26 | 2016-12-06 | 삼성전기주식회사 | 인쇄회로기판, 반도체 패키지 및 그 제조방법 |
WO2018061722A1 (ja) * | 2016-09-30 | 2018-04-05 | 株式会社村田製作所 | アンテナ内蔵モジュール及び通信装置 |
JP6408540B2 (ja) * | 2016-12-01 | 2018-10-17 | 太陽誘電株式会社 | 無線モジュール及び無線モジュールの製造方法 |
JP6495368B2 (ja) * | 2017-04-19 | 2019-04-03 | 立山科学工業株式会社 | 電子モジュール |
CN115312561A (zh) * | 2019-12-24 | 2022-11-08 | 群创光电股份有限公司 | 电子装置 |
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WO2011102095A1 (ja) | 2011-08-25 |
US20120304460A1 (en) | 2012-12-06 |
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