JP5512566B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5512566B2 JP5512566B2 JP2011019273A JP2011019273A JP5512566B2 JP 5512566 B2 JP5512566 B2 JP 5512566B2 JP 2011019273 A JP2011019273 A JP 2011019273A JP 2011019273 A JP2011019273 A JP 2011019273A JP 5512566 B2 JP5512566 B2 JP 5512566B2
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- Prior art keywords
- circuit board
- wiring layer
- external connection
- ground potential
- semiconductor element
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 95
- 239000000463 material Substances 0.000 claims description 21
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000010949 copper Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000011888 foil Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- 238000001856 aerosol method Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
グランド電位になることが可能な前記第2配線層を構成する前記複数の配線のいずれかは、前記回路基板の側面において露出された前記複数のビアのいずれかに前記引き出し線を介して電気的に接続され、グランド電位になることが可能な前記外部接続端子どうしが隣り合う距離は、前記半導体素子から放出される電磁ノイズの波長の半分以下である。
図1は、第1実施形態に係る半導体装置の概要を説明する断面模式図である。
図1には、第1実施形態に係る半導体装置1のほかに、半導体装置1を実装する実装基板100が表示されている。
図4は、第1実施形態に係る半導体装置の製造過程を説明する断面模式図である。
図5は、電磁ノイズのシールド効果を説明するためのシミュレーション結果である。
図6は、第2実施形態に係る半導体装置の断面模式図である。
半導体装置2の基本構造は、半導体装置1と同じである。但し、第2実施形態に係る回路基板10においては、回路基板10の側面10wに設けられたビア14が回路基板10の側面10wにおいて露出していない。第2実施形態に係る回路基板10においては、回路基板10の側面10w近傍に設けられたビア14g上の配線層14mが回路基板10の側面10wにおいて露出している。配線層14mの材質は、ビア14gと同じである。そして、ビア14gに接続されたランド状の配線層14mが導電性シールド層40に接続されている。配線層14mは、グランド電位になる外部接続端子17g(または、外部接続端子17gに接する第2配線層13)に電気的に接続されている。
図7は、第3実施形態に係る半導体装置の平面模式図およびシールド効果を説明する図である。図7(a)には、半導体装置の回路基板の平面模式図が示され、図7(b)には、シールド効果を説明する図である。
図7(a)には、回路基板10の下面側の平面が例示されている。
例えば、外部接続端子17gがグランド電位になれば、配線層19rとビア14gの全てがグランド電位になる。
第3実施形態に係る回路基板では、第1および第2実施形態に比べ、磁界シールド効果が高くなっている。
図8は、第4実施形態に係る半導体装置の断面模式図である。
第4実施形態に係る半導体装置3は、回路基板10を有する。回路基板10は、絶縁基材11と、絶縁基材11の上面側に設けられた第1配線層を構成する複数の配線12と、絶縁基材の下面側に設けられた第2配線層を構成する複数の配線13と、を有する。半導体装置3は、さらに、回路基板10の上面側に搭載された半導体素子20と、半導体素子20を封止し、回路基板10の上面上に設けられた封止樹脂層30と、封止樹脂層30と、回路基板10の端部の一部と、を覆う導電性シールド層40と、を有する。
10 回路基板
10w 側面
11 絶縁基材
12 配線層
13 配線層
14、14g ビア
14m 配線層
15、16 ソルダレジスト層
17、17g 外部接続端子
18、19 引き出し線
19r、50、101 配線層
20 半導体素子
21 ワイヤ
22 ダイボンディング材
23 素子搭載領域
30 封止樹脂層
40 導電性シールド層
90 ダイシングブレード
90h 凹部
100 実装基板
DL ダイシングライン
Claims (4)
- 絶縁基材と、前記絶縁基材の上面側に設けられた第1配線層を構成する複数の配線と、前記絶縁基材の下面側に設けられた第2配線層を構成する複数の配線と、前記絶縁基材の前記上面から前記下面にまで貫通する複数のビアと、を有する回路基板と、
前記回路基板の前記上面側に搭載された半導体素子と、
前記回路基板の前記上面に設けられ、前記半導体素子および前記半導体素子に接続された導電部材を封止する封止樹脂層と、
前記封止樹脂層と、前記回路基板の端部の一部と、を覆う導電性シールド層と、
前記回路基板の下側において、前記第2配線層を構成する前記複数の配線のそれぞれに接続された外部接続端子と、
前記回路基板の下側において、前記第2配線層を構成する前記複数の配線のうち最も外側に配置された前記配線のいずれかに接続された引き出し線と、
を備え、
前記複数のビアのいずれかは、前記回路基板の側面において露出され、前記側面に露出された前記複数のビアのいずれかと、前記導電性シールド層と、が電気的に接続され、
前記第2配線層を構成する前記複数の配線のいずれかのうち前記引き出し線に接続された最も外側に配置された前記配線と、前記引き出し線に接続された前記配線に接続された前記外部接続端子と、は、グランド電位になることが可能であり、
グランド電位になることが可能な前記第2配線層を構成する前記複数の配線のいずれかは、前記回路基板の側面において露出された前記複数のビアのいずれかに前記引き出し線を介して電気的に接続され、
グランド電位になることが可能な前記外部接続端子どうしが隣り合う距離は、前記半導体素子から放出される電磁ノイズの波長の半分以下である半導体装置。 - 前記絶縁基材の前記上面に対して垂直な方向からみて、グランド電位になることが可能な前記外部接続端子および前記引き出し線と、グランド電位になることが可能な前記引き出し線に接続された前記複数のビアのいずれかと、は、前記半導体素子の角部および前記半導体素子の隣り合う角部の間の少なくともいずれかに位置している請求項1記載の半導体装置。
- 前記回路基板の下側において、前記第2配線層を構成する前記複数の配線のそれぞれに接続された前記外部接続端子を取り囲む別の配線層をさらに備え、
前記別の配線層は、グランド電位になることが可能な前記外部接続端子に電気的に接続されいる請求項1または2に記載の半導体装置。 - グランド電位になることが可能な前記外部接続端子と、前記別の配線層と、は、前記半導体素子から放出される電磁ノイズの波長の2分の1より狭い間隔で配置されている請求項3に記載の半導体装置。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011019273A JP5512566B2 (ja) | 2011-01-31 | 2011-01-31 | 半導体装置 |
US13/357,866 US8860190B2 (en) | 2011-01-31 | 2012-01-25 | Semiconductor device |
CN201410252218.6A CN103996670B (zh) | 2011-01-31 | 2012-01-31 | 半导体装置 |
CN201210021621.9A CN102623438B (zh) | 2011-01-31 | 2012-01-31 | 半导体装置 |
TW101103103A TWI483375B (zh) | 2011-01-31 | 2012-01-31 | 半導體裝置 |
TW103120366A TWI560842B (en) | 2011-01-31 | 2012-01-31 | Semiconductor device |
CN201510342188.2A CN105140207B (zh) | 2011-01-31 | 2012-01-31 | 半导体装置 |
US14/294,931 US8952505B2 (en) | 2011-01-31 | 2014-06-03 | Semiconductor device |
US14/552,633 US9123731B2 (en) | 2011-01-31 | 2014-11-25 | Semiconductor device |
US14/801,404 US9401333B2 (en) | 2011-01-31 | 2015-07-16 | Semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011019273A JP5512566B2 (ja) | 2011-01-31 | 2011-01-31 | 半導体装置 |
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US9401333B2 (en) | 2016-07-26 |
TWI483375B (zh) | 2015-05-01 |
US20120193770A1 (en) | 2012-08-02 |
CN102623438A (zh) | 2012-08-01 |
TW201236132A (en) | 2012-09-01 |
US20150325530A1 (en) | 2015-11-12 |
CN103996670B (zh) | 2017-08-22 |
US9123731B2 (en) | 2015-09-01 |
US8860190B2 (en) | 2014-10-14 |
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JP2012160578A (ja) | 2012-08-23 |
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