TWI385815B - 氮化物半導體發光元件 - Google Patents

氮化物半導體發光元件 Download PDF

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Publication number
TWI385815B
TWI385815B TW094110332A TW94110332A TWI385815B TW I385815 B TWI385815 B TW I385815B TW 094110332 A TW094110332 A TW 094110332A TW 94110332 A TW94110332 A TW 94110332A TW I385815 B TWI385815 B TW I385815B
Authority
TW
Taiwan
Prior art keywords
nitride semiconductor
semiconductor layer
substrate
light
layer
Prior art date
Application number
TW094110332A
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English (en)
Chinese (zh)
Other versions
TW200605394A (en
Inventor
Takahiko Sakamoto
Yasutaka Hamaguchi
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of TW200605394A publication Critical patent/TW200605394A/zh
Application granted granted Critical
Publication of TWI385815B publication Critical patent/TWI385815B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
TW094110332A 2004-03-31 2005-03-31 氮化物半導體發光元件 TWI385815B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004107412 2004-03-31

Publications (2)

Publication Number Publication Date
TW200605394A TW200605394A (en) 2006-02-01
TWI385815B true TWI385815B (zh) 2013-02-11

Family

ID=35064087

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094110332A TWI385815B (zh) 2004-03-31 2005-03-31 氮化物半導體發光元件

Country Status (7)

Country Link
US (2) US7358544B2 (ja)
EP (1) EP1746664B1 (ja)
JP (2) JP4320676B2 (ja)
KR (1) KR101119727B1 (ja)
CN (2) CN100524855C (ja)
TW (1) TWI385815B (ja)
WO (1) WO2005096399A1 (ja)

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JP4320687B2 (ja) 2009-08-26
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