TWD227747S - 物理氣相沉積腔室的濺射靶材 - Google Patents

物理氣相沉積腔室的濺射靶材 Download PDF

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Publication number
TWD227747S
TWD227747S TW110303363F TW110303363F TWD227747S TW D227747 S TWD227747 S TW D227747S TW 110303363 F TW110303363 F TW 110303363F TW 110303363 F TW110303363 F TW 110303363F TW D227747 S TWD227747 S TW D227747S
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Taiwan
Prior art keywords
vapor deposition
physical vapor
deposition chamber
sputter target
design
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TW110303363F
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English (en)
Inventor
馬丁 萊克
威廉 富奇堤曼
伊利亞 拉維斯基
斯里尼瓦薩勞 葉德拉
基倫古莫妮拉珊卓拉 沙芬戴亞
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美商應用材料股份有限公司
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Publication of TWD227747S publication Critical patent/TWD227747S/zh

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Abstract

【物品用途】;本設計係關於物理氣相沉積腔室的濺射靶材之外觀設計。;【設計說明】;圖式所揭露之虛線部分，為本案不主張設計之部分。

Description

物理氣相沉積腔室的濺射靶材
本設計係關於物理氣相沉積腔室的濺射靶材之外觀設計。
圖式所揭露之虛線部分，為本案不主張設計之部分。
TW110303363F 2020-03-23 2020-09-23 物理氣相沉積腔室的濺射靶材 TWD227747S (zh)

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US29/728,957 USD937329S1 (en) 2020-03-23 2020-03-23 Sputter target for a physical vapor deposition chamber
US29/728,957 2020-03-23

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TWD227747S true TWD227747S (zh) 2023-10-01

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TW109305355F TWD215707S (zh) 2020-03-23 2020-09-23 物理氣相沉積腔室的濺射靶材
TW110303363F TWD227747S (zh) 2020-03-23 2020-09-23 物理氣相沉積腔室的濺射靶材

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JP (2) JP1702035S (zh)
TW (2) TWD215707S (zh)

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USD937329S1 (en) 2021-11-30
TWD215707S (zh) 2021-12-01
USD970566S1 (en) 2022-11-22
JP1702035S (zh) 2021-12-13
JP1685527S (zh) 2021-05-17

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