TWD146490S - 半導體晶圓研磨用彈性膜 - Google Patents

半導體晶圓研磨用彈性膜

Info

Publication number
TWD146490S
TWD146490S TW100300174U02F TW100300174U02F TWD146490S TW D146490 S TWD146490 S TW D146490S TW 100300174U02 F TW100300174U02 F TW 100300174U02F TW 100300174U02 F TW100300174U02 F TW 100300174U02F TW D146490 S TWD146490 S TW D146490S
Authority
TW
Taiwan
Prior art keywords
elastic film
polishing
article
semiconductor wafer
new model
Prior art date
Application number
TW100300174U02F
Other languages
English (en)
Inventor
Makoto Fukushima
Hozumi Yasuda
Osamu Nabeya
Original Assignee
荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荏原製作所股份有限公司 filed Critical 荏原製作所股份有限公司
Priority to TW100300174U02F priority Critical patent/TWD146490S/zh
Publication of TWD146490S publication Critical patent/TWD146490S/zh

Links

Abstract

【物品用途】;本創作的物品是半導體晶圓研磨用彈性膜，該彈性膜亦稱為薄膜(membrane)，如使用狀態之參考圖所示，在製造半導體等之晶圓的研磨製程中，安裝在研磨裝置之基盤保持環內側，從裝置側對本物品的背面側供給空氣等之氣體，使膜面朝正面側膨脹，讓配置在正面側的晶圓之單一面抵壓在研磨墊，並透過小孔進行真空吸引來保持晶圓所使用的半導體晶圓研磨用彈性膜。;【創作特點】;由各立體圖觀之，該半導體晶圓研磨用彈性膜，其特徵在於正面為平面狀，表面具有多個進行真空吸引用的小孔，而背面則具有多道凸緣，由A-A線剖面圖及B部放大圖可更清楚詳細的觀看出該彈性膜的凹凸緣設計，在B部放大圖中具有三個由底部向上延伸的階狀凸緣，該些凸緣的水平面與底部平行，底部的外側緣係呈淺凹狀設計。該整體造型新穎的設計，因襲原新式樣之整體造型；與原新式樣申請案差異在於，原新式樣之B部放大圖中之凸緣的水平面與底部呈傾斜，本物品呈平行；因此本案與原案之差異些微，不影響該兩案件之近似。
TW100300174U02F 2011-01-12 2011-01-12 半導體晶圓研磨用彈性膜 TWD146490S (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100300174U02F TWD146490S (zh) 2011-01-12 2011-01-12 半導體晶圓研磨用彈性膜

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW100300174U01 2011-01-12
TW100300174U02F TWD146490S (zh) 2011-01-12 2011-01-12 半導體晶圓研磨用彈性膜

Publications (1)

Publication Number Publication Date
TWD146490S true TWD146490S (zh) 2012-04-21

Family

ID=92121122

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100300174U02F TWD146490S (zh) 2011-01-12 2011-01-12 半導體晶圓研磨用彈性膜

Country Status (1)

Country Link
TW (1) TWD146490S (zh)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD837755S1 (en) 2015-04-16 2019-01-08 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD859332S1 (en) 2017-06-29 2019-09-10 Ebara Corporation Elastic membrane for semiconductor wafer polishing
USD868124S1 (en) 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1110975S1 (en) 2022-01-12 2026-02-03 Applied Materials Inc. Collimator for a physical vapor deposition (PVD) chamber

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD837755S1 (en) 2015-04-16 2019-01-08 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD869409S1 (en) 2016-09-30 2019-12-10 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD859332S1 (en) 2017-06-29 2019-09-10 Ebara Corporation Elastic membrane for semiconductor wafer polishing
USD894137S1 (en) 2017-10-05 2020-08-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD868124S1 (en) 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD902165S1 (en) 2018-03-09 2020-11-17 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD970566S1 (en) 2020-03-23 2022-11-22 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD966357S1 (en) 2020-12-02 2022-10-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1110975S1 (en) 2022-01-12 2026-02-03 Applied Materials Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber

Similar Documents

Publication Publication Date Title
TWD146490S (zh) 半導體晶圓研磨用彈性膜
TWD197827S (zh) 半導體晶圓研磨用彈性膜
USD808349S1 (en) Elastic membrane for semiconductor wafer polishing apparatus
TWD138225S1 (zh) 半導體晶圓研磨裝置用彈性膜
USD774382S1 (en) Holder and holder support with lever-actuated suction membrane
TWD158576S (zh) 基板固持構件
TWD180129S (zh) 密封環之部分
TWD180337S (zh) 修整器碟片
USD766850S1 (en) Wafer holder for manufacturing semiconductor
TWD170400S (zh) 晶舟用填縫構件
TWD146491S (zh) 半導體晶圓研磨用彈性膜
USD770990S1 (en) Elastic membrane for semiconductor wafer polishing apparatus
TWD139857S (zh) 半導體晶圓研磨裝置用彈性膜
TWD194953S (zh) Elastic film for semiconductor wafer polishing
TWD194954S (zh) Elastic film for semiconductor wafer polishing
TWD146490S1 (zh) 半導體晶圓研磨用彈性膜
TWD146491S1 (zh) 半導體晶圓研磨用彈性膜
TWD168373S (zh) 半導體晶圓硏磨裝置用彈性膜之部分
TWD171550S (zh) 硏磨墊之部分
TWD180127S (zh) 密封環
TWD170399S (zh) 晶舟用填縫構件
TWD167113S (zh) 半導體晶圓硏磨裝置用彈性膜
TWD193203S (zh) Elastic film for semiconductor wafer polishing
TWD167111S (zh) 半導體晶圓硏磨裝置用彈性膜
TWD215079S (zh) 半導體晶圓研磨用彈性膜