M267462M267462
【新型所屬之技術領域】 本創作係有關於一種濺鍍裝置之準直儀 (collimator)，特別是有關一種濺鍍非金屬之介電薄膜如 阻障層（barrier Uyer)、蝕刻中止層、抗反射層Unti_ reflection layer)及密著層等之準直儀。 【先前技術】[Technical field to which the new type belongs] The present invention relates to a collimator of a sputtering device, and particularly to a sputtering non-metallic dielectric film such as a barrier Uyer, an etching stop layer, and an anti- Collimators for Unti_reflection layer) and adhesion layer. [Prior art]
根據摩爾法則（Moore，s Law)，每隔十八個月IC (Integrated Ci rcui t)半導體晶片之功能及其電晶體應增 加一倍，故目前晶片製造之線徑已急速趨窄而接近〇 ·丨2微 米’線溝之深寬比（aspect rati〇)亦接近三比一。因此， 如中華民國公告第3 1 2 0 2 6號創作專利案，其利用pVD濺鍵 方式將金屬或金屬氮化物均勻沉積於線溝底部係有相♦1 困難度。 胃 在習知濺鍍過程中，自濺鍍靶濺射出之原子及原子團 係以各種角度飛散附著，尤其在線溝之頂部轉階角（陽角） 易沾附各種濺射角度之原子及原子團而稍為隆起。該隆起 之頂部轉接陽角更加擋住後續之濺射原子及原子團，進而 造成在線溝底部轉階角（陰角）形成陰影，無法在底部轉 陰角完整覆蓋。 為了解決轉階陰角不均勻覆蓋之問題，要求自乾材賤 射出之原子及原子團必須以接近垂直角度飛散至晶片。故 通常在濺鍵乾與處理晶片之間加設至少一片多孔之不鱗鋼 準直儀（coll imator)，如中華民國公告第221 064號創作專 利案，該準直儀之垂直向側壁會沾附偏離垂直向角度太多According to Moore's Law, the function of IC (Integrated Circuit) semiconductor chips and their transistors should be doubled every eighteen months, so the wire diameter of wafer manufacturing has been rapidly narrowed and approached. · The aspect ratio of 2 micron 'trenches is also close to three to one. Therefore, as in the Republic of China Publication No. 3 1 2 0 2 creation patent case, the use of pVD sputtering method to deposit metal or metal nitride uniformly on the bottom of the trench has a degree of difficulty. During the conventional sputtering process of the stomach, the atoms and atomic groups sputtered from the sputtering target are scattered and attached at various angles, especially the transition angle (positive angle) at the top of the line groove is easy to attach to the atoms and atomic groups of various sputtering angles. Slightly raised. The positive transition angle of the top of the ridge further blocks subsequent sputtering atoms and atomic groups, which in turn causes shadows at the transition angle (yin angle) at the bottom of the trench, which cannot completely cover the negative angle at the bottom. In order to solve the problem of uneven coverage of the transition angle, it is required that the atoms and atomic groups emitted from the base material must be scattered to the wafer at a near vertical angle. Therefore, at least one porous non-scale steel collimator is usually installed between the sputtered key and the processing wafer. For example, in the case of the creation patent of the Republic of China Announcement No. 221 064, the vertical side wall of the collimator will stain. Too much deviation from vertical angle
M267462 四、創作說明（2) ' 〜 之原子及原子團，並可讓接近垂直向之原子及原子團通過 準直儀。因此，可消除線溝頂部轉階陽角之隆起，而改善 底部轉階陰角之覆蓋。 " 雖然利用上述準直儀可改善轉階陰角之覆蓋，但該準 直儀之開孔侧壁及頂端都會沾附濺射出之原子及原子團， 且其厚度不斷累積增加。尤其是，在每次濺鍍非金屬薄膜 之過程中，如阻障層、蝕刻中止層、抗反射層及 黧 等，該準直儀都經過一次之加熱及冷卻，由於該準直^與 Ϊ St材粒子在熱膨脹係數上無法匹配而形成熱應力？ 使沾附在準直儀之靶材粒子崩裂脫落至 嚴重之顆粒污染。 日日/7工 k成 【新型内容】 膝你^ 了解決上述問題，本創作之第一目的在於提供一插 準‘儀ί ί準直儀，利用其低膨脹與具粗輪面之特‘，該 團)緊密附著於準= 貫直穿 落在待處理物上而造成污染。面上，以防止靶材掉 本創作之第_目的在；^提供一播、胳 膨脹與具粗糙面之準直儀設置二置，利用-低 粒子脫落而導致污；如防止黏附於準直儀之乾材 依據本創作所提供之待處理物。 貫穿通孔並供設置於減^ ^之準直儀，其具有多個 靶與待處理物之間，並該準直儀 M267462 創作說明（3) 係由恒範鋼^Ιηνπ、K〇var)等具低膨脹係數之备屬所製 成表面較佳係為粗糙面，其製造方法有鑄造、板材壓 製或薄片知接荨方式，最後再施以喷砂、喷烊處理，故使 該準直儀對乾材粒子有較^圭之奸寸著度及較小之熱應力。 【實施方式】 如第1圖所不，依據本創作之一實施例之準直儀丨〇係 呈=狀圓盤>，其直徑較佳為20〜50公分而高度較.佳為0· 5〜4 公分，以供設置於濺鍍靶40與待處理物30之間。此外，該 f直儀1G具有多個貫穿通孔u，其中該貫穿通孔u係為六 角形之連通孔洞，每一角之寬度較佳為卜2公分而其深度 較佳為0 · 5 4公分。為了作為濺鑛裝置之準直儀特別是 濺鍍如氮化鈦（TiN)或氮化鈕（TaN)等阻障層…盯“^ layer)之準直儀，該準直儀1〇係由恒範鋼（Invar、Kovar) 等具低膨脹係數之金屬所製成，而其製造方法可、以鑄造、 板材壓製或薄片料等方式製冑，而較佳地在成形後再施 ^喷砂、噴焊處理，使準直儀1〇之表面成為與靶材粒子有 較佳結合之粗缝面。 如第2圖所不，當上述之準直儀1〇裝設於一濺鍍裝置 内時，4濺鍍裝置另包含有一可抽真空室20、一待處理物 30及一濺鍍靶4〇，其中待處理物3〇較佳為半導體晶圓該 濺鍍靶40為鈦靶材，而該準直儀10係位於待處理物30與濺 ，乾40之間。該可抽真空室20包含-電源供應n 21、-真 :幫浦2=、一背板23、一載台24及一氣體供應及流量控制 器25，其中該真空幫浦22可將室2〇内氣體抽出至適當壓 M267462 四、創作說明（4) 力，以利電漿生成，而該氣體供應及流量控制器25所供應 及控制之氣體為氬氣與氮氣，讀載台24承載著該待處理物 30於該室20底部，而該背板23係用以支撐並結合該濺鍍無 40 °在處理過程中，濺鍍靶4〇受到電漿之離子轟擊而濺出 之欽粒子’將與電漿内因解離反應所形成之氮原子形成氮 化鈦（ΤιΝ)並沉積在待處理物3〇之表面，其沉積之厚度約 在500〜1 500A。，以供作為阻障層之用。 由於本創作之準直儀1 〇具有過濾斜向靶材粒子之功 效’使得數材粒子由濺鍍靶4〇至待處理物30有理想 < 移動 均向性’而能提供良好階梯覆蓋（step coverage)之沉積 薄膜。此外，由於準直儀1〇係由低膨脹係數之金屬所製及 其表面係呈粗糙面，使得這些黏附於準直儀丨〇之斜向靶材 緊密附著於準直儀丨0並具近似之熱膨脹係數，不易隨 著每次濺鍍過程中冷熱變化而崩裂脫落，造成對待處理物 3〇之嚴重顆粒污染，故準直儀1〇具有減少污染及較佳 壽命之功效。 ,本創作可在不偏離主要的精神及特徵下以其它不同的 形式實施。例如，本創作之準直儀除了運用於濺鍍阻障層 運用於鎢回狀㈣中止層、以之抗反射 層及密著層等等。 定太2本創作以前述較佳實施例揭$，然:其並非用以限 範圍外乍丄何熟悉此技藝者，在不脫離本創作之精神和 圍Wf:各種之更動與修改，因此本創作之保護範 圍田視後附之申範圍所界定者為準。 M267462 圖式簡單說明 【圖式簡單說明】 第1圖：依本創作準直儀之一具體實施例之立體圖；及 第2圖：本創作之準直儀結合於一濺鍍裝置之縱向剖視 圖。 元件符號簡單說明：M267462 IV. Creation Instructions (2) '~ Atoms and atomic groups, and can pass near-vertical atoms and atomic groups through the collimator. Therefore, it is possible to eliminate the bulge of the transition angle at the top of the line groove and improve the coverage of the transition angle at the bottom of the groove. " Although the coverage of the transition angle can be improved by using the above-mentioned collimator, the side wall and the top of the opening of the collimator will adhere to the sputtered atoms and atomic groups, and the thickness will continuously increase. In particular, during each sputtering process of non-metallic films, such as barrier layers, etching stop layers, anti-reflective layers, and chirps, the collimator is heated and cooled once. Because of the collimation ^ and Ϊ St material particles can not match the thermal expansion coefficient and cause thermal stress? Cause the target particles attached to the collimator to fall apart and cause serious particle contamination. Every day / 7 work [New content] Knee you ^ solved the above problems, the first purpose of this creation is to provide a collimation '仪 ί ί collimator, using its low expansion and features of thick wheel surface' , The group) tightly attached to the quasi- = straight through the object to be treated and cause pollution. The purpose of this creation is to prevent the target from falling off. ^ Provide two settings of a sowing, swelling and collimator with a rough surface, use-low particles fall off and cause dirt; such as to prevent adhesion to the collimation Yi's dry materials are based on the to-be-processed objects provided by this creation. A collimator penetrating through a hole and provided for reduction ^ ^ has a plurality of targets and objects to be processed, and the collimator M267462 Creative Instructions (3) is made by Hengfan Steel ^ Ιηνπ, K〇var) The surface with a low expansion coefficient is preferably a rough surface. Its manufacturing methods include casting, sheet pressing, or thin sheet connection. Finally, sandblasting and blasting are applied, so the alignment is made. The instrument has a lower degree of thermal stress on the particles of the dried material and a smaller thermal stress. [Embodiment] As shown in Fig. 1, a collimator according to an embodiment of the present invention is a round disk with a diameter of preferably 20 to 50 cm and a height of 0. 5 to 4 cm for installation between the sputtering target 40 and the object 30 to be processed. In addition, the f Straightener 1G has a plurality of through-holes u, wherein the through-holes u are hexagonal communicating holes, and the width of each corner is preferably 2 cm and the depth is preferably 0.54 cm. . In order to be used as a collimator for a sputtering device, especially for sputtering a barrier layer such as titanium nitride (TiN) or a nitride button (TaN), etc., the collimator 10 is composed of Hengfan Steel (Invar, Kovar) and other metals with low coefficient of expansion, and its manufacturing method can be made by casting, sheet pressing or sheet material, etc., and preferably blasted after forming 2. Spray welding process, so that the surface of the collimator 10 becomes a rough seam surface with a better combination with the target particles. As shown in Figure 2, when the above-mentioned collimator 10 is installed in a sputtering device At the time, the 4 sputtering device further includes a evacuable chamber 20, an object to be processed 30, and a sputtering target 40, wherein the object to be processed 30 is preferably a semiconductor wafer, and the sputtering target 40 is a titanium target. The collimator 10 is located between the object to be processed 30 and the splash and dry 40. The evacuable chamber 20 includes-power supply n 21,-true: pump 2 =, a back plate 23, and a carrier 24 And a gas supply and flow controller 25, in which the vacuum pump 22 can extract the gas in the chamber 20 to an appropriate pressure M267462 IV. Creation instructions (4) force to facilitate plasma generation, and The gases supplied and controlled by the gas supply and flow controller 25 are argon and nitrogen. The reading stage 24 carries the to-be-processed object 30 at the bottom of the chamber 20, and the back plate 23 is used to support and combine the splash No plating 40 ° During the process, the sputter target 40 was sputtered by plasma ion bombardment, and the particles will sputter with the nitrogen atoms formed by the dissociation reaction in the plasma to form titanium nitride (TiN) and be deposited on the substrate. The thickness of the surface of the treated object 30 is about 500 ~ 1 500A. It is used as a barrier layer. Because the collimator 1 of this creation has the function of filtering oblique target particles, it makes several materials Particles from sputtering target 40 to to-be-processed 30 have ideal < moving homogeneity " and can provide good step coverage. In addition, since collimator 10 is made of metal with low expansion coefficient The produced and its surface is a rough surface, so that the oblique target materials adhered to the collimator 丨 0 are closely attached to the collimator 丨 0 and have an approximate thermal expansion coefficient, which is not easy to change with the cold and heat in each sputtering process The cracks fall off, causing the object to be treated. Severe particle pollution, so the collimator 10 has the effect of reducing pollution and better life. This creation can be implemented in other different forms without departing from the main spirit and characteristics. For example, in addition to using the collimator of this creation The sputtering barrier layer is applied to the tungsten round rhenium stop layer, the anti-reflection layer, and the adhesion layer, etc. Dingtai 2's creation is disclosed in the foregoing preferred embodiment, but it is not intended to limit the scope. At first, those who are familiar with this art will not deviate from the spirit and scope of this creation: various changes and modifications, so the scope of protection of this creation is defined by the scope of application attached to it. M267462 Schematic description Brief description of the drawings] Figure 1: A perspective view of a specific embodiment of the collimator according to the present invention; and Figure 2: A longitudinal sectional view of the collimator of the present invention combined with a sputtering device. Simple explanation of component symbols:
10 準直儀 11 貫穿通孔 20 可抽真空室 21 電源供應器 22 真空幫浦 23 背板 24 載台 25 氣體供應及流量控制器 30 待處理物 40 濺鍍把10 Collimator 11 Through-hole 20 Evacuable chamber 21 Power supply 22 Vacuum pump 23 Back plate 24 Carrier 25 Gas supply and flow controller 30 To-be-processed 40 Sputtering handle