TWD209650S - Pvd腔的沉積環 - Google Patents

Pvd腔的沉積環 Download PDF

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Publication number
TWD209650S
TWD209650S TW108303547D01F TW108303547D01F TWD209650S TW D209650 S TWD209650 S TW D209650S TW 108303547D01 F TW108303547D01 F TW 108303547D01F TW 108303547D01 F TW108303547D01 F TW 108303547D01F TW D209650 S TWD209650 S TW D209650S
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TW
Taiwan
Prior art keywords
design
deposition ring
pvd chamber
cross
sectional
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TW108303547D01F
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English (en)
Inventor
大衛 鞏特爾
振雄 蔡
基倫古莫妮拉珊卓拉 沙芬戴亞
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美商應用材料股份有限公司
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Publication of TWD209650S publication Critical patent/TWD209650S/zh

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Abstract

【物品用途】;本設計所請求之PVD腔的沉積環係用於半導體製程之沉積環。;【設計說明】;圖式所揭露之虛線部分,為本案不主張設計之部分。;剖視圖所示為俯視圖中剖面線位置之局部剖視結構。;本衍生設計與原設計不同之處在於以虛線呈現部分的外觀。

Description

PVD腔的沉積環
本設計所請求之PVD腔的沉積環係用於半導體製程之沉積環。
圖式所揭露之虛線部分,為本案不主張設計之部分。
剖視圖所示為俯視圖中剖面線位置之局部剖視結構。
本衍生設計與原設計不同之處在於以虛線呈現部分的外觀。
TW108303547D01F 2018-12-17 2019-06-17 Pvd腔的沉積環 TWD209650S (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29/673,685 2018-12-17
US29/673,685 USD888903S1 (en) 2018-12-17 2018-12-17 Deposition ring for physical vapor deposition chamber

Publications (1)

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TWD209650S true TWD209650S (zh) 2021-02-01

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TW108303547F TWD207532S (zh) 2018-12-17 2019-06-17 Pvd腔的沉積環
TW108303547D01F TWD209650S (zh) 2018-12-17 2019-06-17 Pvd腔的沉積環

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US (1) USD888903S1 (zh)
JP (2) JP1669226S (zh)
TW (2) TWD207532S (zh)

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USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
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US11581167B2 (en) * 2021-06-18 2023-02-14 Applied Materials, Inc. Process kit having tall deposition ring and smaller diameter electrostatic chuck (ESC) for PVD chamber
TWD227909S (zh) 2023-04-21 2023-10-01 錩崎勝企業有限公司 壁式水龍頭蓋板用密封材

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Publication number Publication date
JP1669283S (zh) 2020-09-28
USD888903S1 (en) 2020-06-30
TWD207532S (zh) 2020-10-01
JP1669226S (zh) 2020-09-28

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