TWD217686S - 用於半導體處理腔室的沉積環 - Google Patents

用於半導體處理腔室的沉積環 Download PDF

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Publication number
TWD217686S
TWD217686S TW110304099F TW110304099F TWD217686S TW D217686 S TWD217686 S TW D217686S TW 110304099 F TW110304099 F TW 110304099F TW 110304099 F TW110304099 F TW 110304099F TW D217686 S TWD217686 S TW D217686S
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Taiwan
Prior art keywords
semiconductor processing
processing chamber
deposition ring
design
deposition
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TW110304099F
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English (en)
Inventor
基倫古莫妮拉珊卓拉 沙芬戴亞
宋佼
大衛 鞏特爾
伊蓮娜Ｈ 維索卡
智東 詹
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美商應用材料股份有限公司
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Publication of TWD217686S publication Critical patent/TWD217686S/zh

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Abstract

【物品用途】;本設計所請求係用於半導體處理腔室的沉積環。;【設計說明】;圖式所揭露的虛線部分，為本案不主張設計之部分。

Description

用於半導體處理腔室的沉積環
本設計所請求係用於半導體處理腔室的沉積環。
圖式所揭露的虛線部分，為本案不主張設計之部分。
TW110304099F 2020-07-31 2021-01-25 用於半導體處理腔室的沉積環 TWD217686S (zh)

Applications Claiming Priority (2)

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US29/744,882 2020-07-31
US29/744,882 USD933726S1 (en) 2020-07-31 2020-07-31 Deposition ring for a semiconductor processing chamber

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TWD217686S true TWD217686S (zh) 2022-03-11

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TW110300413F TWD217572S (zh) 2020-07-31 2021-01-25 用於半導體處理腔室的沉積環
TW110304099F TWD217686S (zh) 2020-07-31 2021-01-25 用於半導體處理腔室的沉積環

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TW110300413F TWD217572S (zh) 2020-07-31 2021-01-25 用於半導體處理腔室的沉積環

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JP (2) JP1704604S (zh)
TW (2) TWD217572S (zh)

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USD933726S1 (en) 2021-10-19
JP1708687S (ja) 2022-03-01
JP1704604S (ja) 2022-01-13
TWD217572S (zh) 2022-03-11

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