USD759603S1 - Chamber of charged particle beam drawing apparatus - Google Patents

Chamber of charged particle beam drawing apparatus Download PDF

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Publication number
USD759603S1
USD759603S1 US29/514,862 US201529514862F USD759603S US D759603 S1 USD759603 S1 US D759603S1 US 201529514862 F US201529514862 F US 201529514862F US D759603 S USD759603 S US D759603S
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United States
Prior art keywords
chamber
charged particle
particle beam
drawing apparatus
beam drawing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US29/514,862
Inventor
Hiroyasu Saito
Yoshinori Nakagawa
Seiichi Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US29/479,498 external-priority patent/USD722298S1/en
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Priority to US29/514,862 priority Critical patent/USD759603S1/en
Assigned to NUFLARE TECHNOLOGY, INC reassignment NUFLARE TECHNOLOGY, INC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAKAGAWA, YOSHINORI, NAKAZAWA, SEIICHI, SAITO, HIROYASU
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FIG. 1 is a top perspective view of a chamber of charged particle beam drawing apparatus showing our new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a right side view thereof, the left side view being a mirror image;
FIG. 5 is a top plan view thereof;
FIG. 6 is a bottom plan view thereof;
FIG. 7 is a cross-sectional view taken along a line 7-7 in FIG. 3; and,
FIG. 8 is a cross-sectional view taken along a line 8-8 in FIG. 3.
The dot-dash lines indicate the boundary between the claimed portion and unclaimed portion.

Claims (1)

    CLAIM
  1. The ornamental design for a chamber of charged particle beam drawing apparatus, as shown and described.
US29/514,862 2013-07-17 2015-01-16 Chamber of charged particle beam drawing apparatus Active USD759603S1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US29/514,862 USD759603S1 (en) 2013-07-17 2015-01-16 Chamber of charged particle beam drawing apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013-016242 2013-01-30
JP2013016242 2013-07-17
US29/479,498 USD722298S1 (en) 2013-07-17 2014-01-16 Chamber of charged particle beam drawing apparatus
US29/514,862 USD759603S1 (en) 2013-07-17 2015-01-16 Chamber of charged particle beam drawing apparatus

Related Parent Applications (1)

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US29/479,498 Continuation-In-Part USD722298S1 (en) 2013-07-17 2014-01-16 Chamber of charged particle beam drawing apparatus

Publications (1)

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USD759603S1 true USD759603S1 (en) 2016-06-21

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US29/514,862 Active USD759603S1 (en) 2013-07-17 2015-01-16 Chamber of charged particle beam drawing apparatus

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD825500S1 (en) * 2016-03-24 2018-08-14 Hamamatsu Photonics K.K. Optical semiconductor element
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber

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US5391886A (en) * 1991-08-09 1995-02-21 Fujitsu Limited Charged particle beam exposure system and method of exposing a pattern on an object by such a charged particle beam exposure system
USD395638S (en) 1997-01-30 1998-06-30 Sony Corporation Semiconductor package
USD396846S (en) 1997-04-16 1998-08-11 Matsushita Electronics Corporation Semiconductor device
USD471166S1 (en) 2001-04-06 2003-03-04 Kabushiki Kaisha Toshiba Light emitting semiconductor device
USD505397S1 (en) 2003-09-15 2005-05-24 Nichia Corporation Light emitting diode
USD510912S1 (en) 2003-09-15 2005-10-25 Nichia Corporation Light emitting diode
US20060068301A1 (en) 2003-04-16 2006-03-30 Nikon Corporation Pattern decision method and system, mask manufacturing method, image-forming performance adjusting method, exposure method and apparatus, program, and information recording medium
US20060163705A1 (en) * 2005-01-21 2006-07-27 Toshimi Kamikawa Surface mount semiconductor device
US20070145403A1 (en) * 2005-12-27 2007-06-28 Kabushiki Kaisha Toshiba Luminescent device and method for manufacturing the same
US20070187624A1 (en) 2006-02-14 2007-08-16 Nuflare Technology, Inc. Multiple irradiation effect-corrected dose determination technique for charged particle beam lithography
US20080011965A1 (en) 2006-07-14 2008-01-17 Nuflare Technology, Inc. Charged-particle beam pattern writing method and apparatus and software program for use therein
US20080121620A1 (en) 2006-11-24 2008-05-29 Guo G X Processing chamber
US20090032739A1 (en) 2007-07-30 2009-02-05 Jeol Ltd. Method and System for Charged-Particle Beam Lithography
US7511290B2 (en) 2006-02-21 2009-03-31 Nuflare Technology, Inc. Charged particle beam writing method and apparatus
USD591697S1 (en) 2006-08-09 2009-05-05 Cree, Inc. Lamp package
USD592617S1 (en) 2005-12-09 2009-05-19 Nichia Corporation Light emitting diode
USD593969S1 (en) 2006-10-10 2009-06-09 Tokyo Electron Limited Processing chamber for manufacturing semiconductors
US20090242788A1 (en) 2008-03-26 2009-10-01 Fujifilm Corporation Electron beam writing method, fine pattern writing system, method for manufacturing uneven pattern carrying substrate, and method for manufacturing magnetic disk medium
USD602451S1 (en) 2008-05-20 2009-10-20 Koninklijke Philips Electronics N.V. LED module
US20100015537A1 (en) 2005-10-25 2010-01-21 Nuflare Technology, Inc. Beam dose computing method and writing method and record carrier body and writing apparatus
USD651184S1 (en) 2009-10-26 2011-12-27 Foxsemicon Integrated Technology, Inc Light emitting diode
US8481964B2 (en) 2009-08-04 2013-07-09 Nuflare Technology, Inc. Charged particle beam drawing apparatus and method
USD690443S1 (en) 2011-06-06 2013-09-24 Citizen Electronics Co., Ltd. Light-emitting diode
USD710809S1 (en) * 2012-01-12 2014-08-12 Dominant Opto Technologies Sdn. Bhd. Light emitting diode
USD715233S1 (en) * 2009-10-26 2014-10-14 Nichia Corporation Light emitting diode
USD722298S1 (en) * 2013-07-17 2015-02-10 Nuflare Technology, Inc. Chamber of charged particle beam drawing apparatus
US9018602B2 (en) * 2012-09-14 2015-04-28 Nuflare Technology, Inc. Charged particle beam writing apparatus and charged particle beam writing method
US9236223B2 (en) * 2013-01-18 2016-01-12 Nuflare Technology, Inc. Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method

Patent Citations (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391886A (en) * 1991-08-09 1995-02-21 Fujitsu Limited Charged particle beam exposure system and method of exposing a pattern on an object by such a charged particle beam exposure system
USD395638S (en) 1997-01-30 1998-06-30 Sony Corporation Semiconductor package
USD396846S (en) 1997-04-16 1998-08-11 Matsushita Electronics Corporation Semiconductor device
USD471166S1 (en) 2001-04-06 2003-03-04 Kabushiki Kaisha Toshiba Light emitting semiconductor device
US20060068301A1 (en) 2003-04-16 2006-03-30 Nikon Corporation Pattern decision method and system, mask manufacturing method, image-forming performance adjusting method, exposure method and apparatus, program, and information recording medium
USD510912S1 (en) 2003-09-15 2005-10-25 Nichia Corporation Light emitting diode
USD505397S1 (en) 2003-09-15 2005-05-24 Nichia Corporation Light emitting diode
US20060163705A1 (en) * 2005-01-21 2006-07-27 Toshimi Kamikawa Surface mount semiconductor device
US20100015537A1 (en) 2005-10-25 2010-01-21 Nuflare Technology, Inc. Beam dose computing method and writing method and record carrier body and writing apparatus
USD592617S1 (en) 2005-12-09 2009-05-19 Nichia Corporation Light emitting diode
USD598400S1 (en) 2005-12-09 2009-08-18 Nichia Corporation Light emitting diode
US20070145403A1 (en) * 2005-12-27 2007-06-28 Kabushiki Kaisha Toshiba Luminescent device and method for manufacturing the same
US20070187624A1 (en) 2006-02-14 2007-08-16 Nuflare Technology, Inc. Multiple irradiation effect-corrected dose determination technique for charged particle beam lithography
US7511290B2 (en) 2006-02-21 2009-03-31 Nuflare Technology, Inc. Charged particle beam writing method and apparatus
US20080011965A1 (en) 2006-07-14 2008-01-17 Nuflare Technology, Inc. Charged-particle beam pattern writing method and apparatus and software program for use therein
USD591697S1 (en) 2006-08-09 2009-05-05 Cree, Inc. Lamp package
USD593969S1 (en) 2006-10-10 2009-06-09 Tokyo Electron Limited Processing chamber for manufacturing semiconductors
US20080121620A1 (en) 2006-11-24 2008-05-29 Guo G X Processing chamber
US20090032739A1 (en) 2007-07-30 2009-02-05 Jeol Ltd. Method and System for Charged-Particle Beam Lithography
US20090242788A1 (en) 2008-03-26 2009-10-01 Fujifilm Corporation Electron beam writing method, fine pattern writing system, method for manufacturing uneven pattern carrying substrate, and method for manufacturing magnetic disk medium
US8049190B2 (en) 2008-03-26 2011-11-01 Fujifilm Corporation Electron beam writing method, fine pattern writing system, method for manufacturing uneven pattern carrying substrate, and method for manufacturing magnetic disk medium
USD602451S1 (en) 2008-05-20 2009-10-20 Koninklijke Philips Electronics N.V. LED module
US8481964B2 (en) 2009-08-04 2013-07-09 Nuflare Technology, Inc. Charged particle beam drawing apparatus and method
USD651184S1 (en) 2009-10-26 2011-12-27 Foxsemicon Integrated Technology, Inc Light emitting diode
USD715233S1 (en) * 2009-10-26 2014-10-14 Nichia Corporation Light emitting diode
USD690443S1 (en) 2011-06-06 2013-09-24 Citizen Electronics Co., Ltd. Light-emitting diode
USD710809S1 (en) * 2012-01-12 2014-08-12 Dominant Opto Technologies Sdn. Bhd. Light emitting diode
US9018602B2 (en) * 2012-09-14 2015-04-28 Nuflare Technology, Inc. Charged particle beam writing apparatus and charged particle beam writing method
US9236223B2 (en) * 2013-01-18 2016-01-12 Nuflare Technology, Inc. Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method
USD722298S1 (en) * 2013-07-17 2015-02-10 Nuflare Technology, Inc. Chamber of charged particle beam drawing apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD825500S1 (en) * 2016-03-24 2018-08-14 Hamamatsu Photonics K.K. Optical semiconductor element
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber

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