TW201721721A - 陣列基板、顯示裝置及陣列基板的製備方法 - Google Patents

陣列基板、顯示裝置及陣列基板的製備方法 Download PDF

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TW201721721A
TW201721721A TW105117103A TW105117103A TW201721721A TW 201721721 A TW201721721 A TW 201721721A TW 105117103 A TW105117103 A TW 105117103A TW 105117103 A TW105117103 A TW 105117103A TW 201721721 A TW201721721 A TW 201721721A
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Taiwan
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layer
dielectric layer
thin film
gate insulating
film transistor
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TW105117103A
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TWI618123B (zh
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林欣樺
高逸群
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鴻海精密工業股份有限公司
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Abstract

一種陣列基板，其包括基板、設置於基板上的多個第一薄膜電晶體、多個第二薄膜電晶體以及多個第三薄膜電晶體，第一薄膜電晶體為多晶矽薄膜電晶體，該第一薄膜電晶體包括依次設置於基板上的第一介電層以及第二介電層；第二薄膜電晶體和第三薄膜電晶體為金屬氧化物薄膜電晶體；第二薄膜電晶體包括設置於基板上的第三介電層；第三薄膜電晶體包括設置於基板上的第四介電層，該第一介電層的材質為氮化矽，該第二、第三和第四介電層的材質均為氧化矽。本發明還提供應用該陣列基板的顯示裝置及該陣列基板的製備方法。第二、第三薄膜電晶體上僅覆蓋氧化矽材質的第三介電層和第四介電層，避免氮元素薄膜電晶體的影響。

Description

陣列基板、顯示裝置及陣列基板的製備方法
本發明涉及一種陣列基板、應用該陣列基板的顯示裝置、以及該陣列基板的製備方法，尤其涉及一種應用于有機發光二極體Organic Light Emitting Diode，OLED）顯示裝置的陣列基板。
平面顯示裝置具有機身薄、省電、無輻射等眾多優點，得到了廣泛的應用。現有的平面顯示裝置主要包括液晶顯示器（Liquid Crystal Display，LCD）及有機電致發光器件（Organic Electroluminescence Device，OELD），也稱為有機發光二極體（Organic Light Emitting Diode，OLED）。一般而言，顯示器的顯示陣列基板包括一基板，所述基板上設置有連接畫素單元的畫素陣列及驅動所述畫素陣列的驅動電路。採用低溫多晶矽技術（LTPS）製造的多晶矽薄膜電晶體的電子遷移率大於金屬氧化物薄膜電晶體的電子遷移率，但多晶矽薄膜電晶體的漏電流高於金屬氧化物薄膜電晶體的漏電流。驅動電路上的薄膜電晶體需要電子遷移率較高以提升切換速度，而顯示區域內的薄膜電晶體需要較小的漏電流以避免顯示器亮度不均勻。
有鑑於此，有必要提供一種性能良好的陣列基板。
一種陣列基板，其包括基板、設置於基板上的多個第一薄膜電晶體、多個第二薄膜電晶體以及多個第三薄膜電晶體，第一薄膜電晶體為多晶矽薄膜電晶體，該第一薄膜電晶體包括依次設置於基板上的第一半導體層、第一閘極絕緣層、第一閘極、第一介電層、以及第二介電層；第二薄膜電晶體和第三薄膜電晶體為金屬氧化物薄膜電晶體；第二薄膜電晶體包括依次設置於基板上的第二半導體層、第二閘極絕緣層、第二閘極、第三介電層、以及第三半導體層；第三薄膜電晶體包括依次設置於基板上的第三閘極絕緣層、第三閘極、第四介電層以及第四半導體層，該第一介電層的材質為氮化矽，該第二介電層、第三介電層和第四介電層的材質均為氧化矽。
一種陣列基板，其包括基板、設置於基板上的多個第一薄膜電晶體以及多個第三薄膜電晶體，第一薄膜電晶體為多晶矽薄膜電晶體，第三薄膜電晶體為金屬氧化物薄膜電晶體；該第一薄膜電晶體包括依次設置於基板上的第一半導體層、第一閘極絕緣層、第一閘極、第一介電層、以及第二介電層，該第一半導體層為摻雜的多晶矽層；該第三薄膜電晶體包括依次設置於基板上的第三閘極絕緣層、第三閘極、第四介電層以及第四半導體層，第一介電層的材質為氮化矽，該第二介電層和第四介電層的材質為氧化矽。
一種應用上述陣列基板的顯示裝置。
一種陣列基板的製備方法，其包括如下步驟：
提供一基板，在基板上形成多晶矽半導體層；
對多晶矽層進行摻雜，並圖案化多晶矽層以形成第一半導體層和第二半導體層；
對第一半導體層進行摻雜以形成兩個間隔設置的第一摻雜區域；
在基板上形成第一閘極絕緣層、第二閘極絕緣層以及第三閘極絕緣層，並在第一閘極絕緣層上形成第一閘極，在第二閘極絕緣層上形成第二閘極，並在第三閘極絕緣層上形成第三閘極；
對第一半導體層進行摻雜以形成兩個間隔設置的第二摻雜區域以及非摻雜區域；
僅在第一閘極絕緣層上形成第一介電層，該第一介電層的材質為氮化矽；
在第一介電層、第二閘極絕緣層以及第三閘極絕緣層上形成第二介電層、第三介電層以及第四介電層，該第二介電層、第三介電層以及第四介電層的材質均為氧化矽；
在第三介電層以及第四介電層上分別沉積形成第三半導體層和第四半導體層，該第三半導體層和第四半導體層的材質均為金屬氧化物半導體；
在與第一摻雜區域對應處開設第一過孔及第二過孔貫穿第二介電層、第一介電層以及第一閘極絕緣層，在第二半導體層對應的位置處分別開設第三過孔和第四過孔，第三過孔貫穿第三介電層和第二閘極絕緣層，第四過孔貫穿第三介電層；
在在第二介電層上且在第一過孔和第二過孔中分別形成第一源極和第一汲極，在第三介電層上且在第三過孔中形成第二源極和在第三介電層上形成第二汲極，在第四介電層上且在第四過孔中形成第三源極和在第四介電上形成第三汲極。
本發明的陣列基板的第二薄膜電晶體和第三薄膜電晶體上僅覆蓋氧化矽材質的第三介電層和第四介電層，避免氮元素對第二薄膜電晶體和第三薄膜電晶體的影響，進而提高第二薄膜電晶體和第三薄膜電晶體的可靠性；同時，為所述第一薄膜電晶體中的通道區域由矽形成，可提高切換速度及驅動強度，且第二薄膜電晶體的通道區域使用氧化半導體材料形成，以降低漏電流並提高均一性，因此本發明的陣列基板的薄膜電晶體的組合能夠達到最佳效果。
圖1為本發明所提供之具有多種類型薄膜電晶體之顯示器的平面示意圖。
圖2為圖1中陣列基板的剖圖面示意圖。
圖3至4為本發明所提供之具有多種類型薄膜電晶體之顯示器製作流程。
圖5至圖16為圖3、圖4中各流程所對應的結構剖視圖。
請參閱圖1，本發明提供一種具有多種類型薄膜電晶體之顯示器1。在本實施方式中，該顯示器1可為一自發光式顯示器，如有機電致發光顯示器，或一非自發光式顯示器，如液晶顯示器。
該顯示器1包括陣列基板20。該陣列基板20包括多條相互平行設置的資料線11以及多條相互平行且與資料線11正交設置的掃描線12。該多條資料線11與第一驅動電路14電性連接，多條掃描線12與第二驅動電路16電性連接。該多條資料線11與該多條掃描線12垂直絕緣相交，定義多個畫素單元18。顯示器1定義有一個顯示區域130以及圍繞顯示區域130設置的非顯示區域150。所述多條資料線11、多條掃描線12、多個畫素單元180設置於顯示區域130。第一驅動電路14和第二驅動電路16設置於非顯示區域150內。第一驅動電路14設置於顯示區域130的上側，第二驅動電路16設置於顯示區域130的至少一側。在本實施方式中，顯示器1包括兩個第二驅動電路16。該第二驅動電路16對稱設置於陣列基板20的左右兩側。在本實施方式中，第一驅動電路14可包括多工電路和顯示驅動電路。第二驅動電路16為閘極驅動電路。
圖2為本實施方式中的陣列基板20的剖面示意圖。請同時參閱圖1及圖2，陣列基板20包括基板21、多個設置於資料線11和掃描線12之間的第一薄膜電晶體23、多個第二薄膜電晶體24以及多個第三薄膜電晶體25。其中，第一薄膜電晶體23、第二薄膜電晶體24以及第三薄膜電晶體25可用於位於非顯示區域150內，也可以用於顯示區域130內。可以理解，該剖面示意圖僅示意出部分該陣列基板20（如該陣列基板的一個畫素位置的剖面示意圖），實際上，該陣列基板20可包含多個由圖2所示的部分連接於一體的多個單元。第一薄膜電晶體23為多晶矽（poly-silicon）薄膜電晶體，第二薄膜電晶體24和第三薄膜電晶體25均為金屬氧化物(Metal Oxide)薄膜電晶體。在本實施方式中，第一薄膜電晶體23位於非顯示區域150內，第二薄膜電晶體24和第三薄膜電晶體25位於顯示區域130內。在其他實施方式中，第一電晶體23也可設置於顯示區域150內，第二薄膜電晶體24也可設置於非顯示區域150內。
第一薄膜電晶體23應用於第一驅動電路14或第二驅動電路16中。第一薄膜電晶體23包括設置於基板21上的第一半導體層231、第一閘極絕緣層232、第一閘極234、第一介電層235、第二介電層236、第一源極237以及第一汲極238。第一半導體層231包括兩個第一摻雜區域2312、兩個第二摻雜區域2314以及非摻雜區域2315。該兩個第二摻雜區域2314對稱設置於非摻雜區域2315的相對兩側，該兩個第一摻雜區域2312對稱設置於非摻雜區域2315的相對兩側，且該第二摻雜區域2314夾設於第一摻雜區域2312和非摻雜區域2315之間。其中，第一摻雜區域2312的摻雜濃度大於第二摻雜區域2314的摻雜濃度。
第一閘極絕緣層232形成於基板21上，且覆蓋第一半導體層231。第一閘極234形成於第一閘極絕緣層232上，且對應第一半導體層231的位置設置。第一介電層235形成於第一閘極絕緣層232上，且覆蓋該第一閘極234。第二介電層236形成於第一介電層235上，且覆蓋該第一介電層235。該第一源極237和第一汲極238形成在該第二介電層236上且位於該第一閘極234的相對兩側，且經由穿過第一介電層235、第二介電層236以及第一閘極絕緣層232的第一過孔301和第二過孔302（參圖12）與第一半導體層231電性連接。第一半導體層231能夠作為畫素單元18的存儲電容。在本實施方式中，第一介電層235由氮化矽材料製成，第二介電層236由氧化矽材料製成。第一半導體231為多晶矽半導體層，第一摻雜區域2312和第二摻雜區域2314中摻雜有三價元素，例如硼元素。在其他實施方式中，第一摻雜區域2312和第二摻雜區域2314中也可根據需求摻雜其他元素以滿足相應需求，例如五價元素。
第二薄膜電晶體24同時與資料線11、掃描線12以及對應的畫素單元18電性連接。第二薄膜電晶體24用於驅動發光二極體的陽極。第二薄膜電晶體24包括設置於基板21上的第二半導體層241、第二閘極絕緣層242、第二閘極243、第三介電層245、第三半導體層246、第二源極247以及第二汲極248。第二閘極絕緣層242形成於基板21上，且覆蓋第二半導體層241。第二閘極243形成於第二閘極絕緣層242上，且對應第二半導體層241的位置設置。第三介電層245形成於第二閘極絕緣層242上，且覆蓋該第二閘極243。第三半導體層246形成於第三介電層245上，且對應第二閘極243的位置設置。第二源極247與第二汲極248形成在245上且對稱設置於第三半導體246的相對兩側。該第二源極247經由穿過第三介電層245以及第二閘極絕緣層242的第三過孔304和第四過孔306（參圖12）與第二半導體層241電性連接，以使得該第二半導體層241可由半導體轉為導體。該第二源極247覆蓋部分第三半導體層246。第二汲極248設置於第三介電層245上，且覆蓋部分第三半導體層246。該第二半導體層241、第二閘極243以及夾在二者之間的第二閘極絕緣層242共同構成畫素單元180的存儲電容。在本實施方式中，第三介電層245由氧化矽材料製成。第二半導體層241中摻雜有五價元素，例如磷元素。第三半導體層246由銦鎵鋅氧化物(Indium Gallium Zinc Oxide，IGZO)材料製成。在其他可替代的實施方式中，第二半導體層241也可由銦鎵鋅氧化物材料製成，也可以摻雜有三價元素，例如硼元素。
第三薄膜電晶體25用於驅動畫素單元18。第三薄膜電晶體25包括第三閘極絕緣層251、第三閘極252、第四介電層253、第四半導體層254、第三源極255以及第三汲極256。第三閘極絕緣層251形成於基板21上。第三閘極252形成於第三閘極絕緣層251上。第四介電層253形成於第三閘極絕緣層251上，且覆蓋該第三閘極252。第四半導體層254形成於第四介電層253上，且對應第三閘極252的位置設置。第三源極255與第三汲極256形成在第四介電層253上且對稱設置於第四半導體254相對兩側。該第三源極255穿過第四介電層253與第二閘極243電性連接，且覆蓋部分第四半導體層254。第三汲極256設置於第四介電層253上，且覆蓋部分第四半導體層254。在本實施方式中，第四介電層253由氧化矽材料製成。第四半導體層254由銦鎵鋅氧化物(Indium Gallium Zinc Oxide，IGZO)材料製成。
陣列基板20還包括平坦層26、電極層27、發光定義層28以及至少兩個間隔物29。平坦層26覆蓋第一薄膜電晶體23、第二薄膜電晶體24以及第三薄膜電晶體25。電極層27形成於平坦層26上，且穿過平坦層26與第二源極247電性連接。發光定義層28形成於平坦層26上，用於界定畫素單元的發光區域。發光定義層28的兩個端部分別覆蓋部分電極層27。間隔物29垂直設置于發光定義層28上。在本實施方式中，電極層27為發光二極體的陽極。間隔物29大致呈等腰梯形。
可以理解，在其他實施例中，所述基板21上可形成一緩衝層（圖未示），所述第一半導體層231、第二半導體層241、第一閘極絕緣層232、第二閘極絕緣層242以及第三閘極絕緣層251可形成於緩衝層上。
上述陣列基板20中，第一閘極絕緣層232、第二閘極絕緣層242以及第三閘極絕緣層251相互連接，且一體成型。第二介電層236、第三介電層245以及第四介電層253相互連接，且一體成型。其中，第二薄膜電晶體24和第三薄膜電晶體25上僅覆蓋氧化矽材質的第三介電層245和第四介電層253，避免氮元素對第二薄膜電晶體24和第三薄膜電晶體25的影響，進而提高第二薄膜電晶體24和第三薄膜電晶體25的可靠性。同時，為了增強顯示效果，可使用滿足一定條件的薄膜電晶體。上述一定條件包括：漏電流、切換速度、驅動強度、均一性等等。在本實施方式中，所述第一驅動電路14的第一薄膜電晶體23中的通道區域可由多晶矽形成，以提高切換速度及驅動強度，且所述畫素中的第二薄膜電晶體24和第三薄膜電晶體25中的通道區域可使用氧化半導體材料形成，以降低漏電流並提高均一性，因此本具有多種類型薄膜電晶體的顯示器能夠達到最佳效果。
在其他實施方式中，當陣列基板20應用於液晶顯示器中，可對陣列基板20進行相應的變化，例如去除第二電晶體24以及電極層27，以適應於液晶顯示器。應用於液晶顯示器中的陣列基板20，第一薄膜電晶體23的第一閘極234被第一介電層235和第二介電層236覆蓋，二位於畫素單元18對應位置的第三薄膜電晶體25的第三閘極252僅覆蓋有第四介電層253。
圖3和圖4為一種較佳實施方式的具有多種類型薄膜電晶體的顯示器1的製造方法流程圖。該顯示器1制的造方法包括如下步驟：
步驟101，在基板21上形成多晶矽層30。基板21的材質可以選自玻璃、石英、有機聚合物或其他可適用的透明材料。如圖5所示，多晶矽層30與基板21的兩端對齊，且厚度小於基板21的厚度。
步驟102，對多晶矽層30進行摻雜，並圖案化多晶矽層30以形成第一半導體層231和第二半導體層241。如圖6A所示，第一半導體層231和第二半導體層241共面設置於基板21上，且間隔一定距離。在本實施方式中，多晶矽層30摻雜有摻雜五價元素，例如元素。在其他實施方式中，多晶矽層30可摻雜有其他元素，例如三價元素，硼。在其他實施方式中，多晶矽層的摻雜也可省略或者與其他摻雜步驟進行調換或調整以滿足生產需求。
步驟103，利用第一光罩對第一半導體層231進行摻雜以形成兩個間隔設置的第一摻雜區域2312。如圖6B所示，具體地，在第一半導體層231的相對兩端摻雜三價元素。在本實施方式中，第一摻雜區域2312中摻雜硼元素。在其他實施方式中，第一摻雜區域2312中可摻雜有其他元素，例如五價元素，磷。在其他實施方式中，多晶矽層的摻雜也可省略或者與其他摻雜步驟進行調換或調整以滿足生產需求。
步驟104，在基板21上形成第一閘極絕緣層232、第二閘極絕緣層242以及第三閘極絕緣層251，在第一閘極絕緣層232上形成第一閘極234，在第二閘極絕緣層242上形成第二閘極243，並在第三閘極絕緣層251上形成第三閘極252。如圖7所示，第一閘極絕緣層232、第二閘極絕緣層242以及第三閘極絕緣層251相互連接，且一體成型。該第一閘極絕緣層232、第二閘極絕緣層242以及第三閘極絕緣層251由同一道工序形成。
步驟105，利用第二光罩對第一半導體層231進行摻雜以形成兩個間隔設置的第二摻雜區域2314以及非摻雜區域2315。請參閱圖8，該第二摻雜區域2314對稱設置於非摻雜區域2315的相對兩側，該第一摻雜區域2312對稱設置於非摻雜區域2315的相對兩側，且該第二摻雜區域2314夾設於第一摻雜區域2312和非摻雜區域2315之間。其中，第一摻雜區域2312的摻雜濃度大於第二摻雜區域2314的摻雜濃度。在本實施方式中，第二摻雜區域2314中摻雜有三價元素，例如硼。在其他實施方式中，第二摻雜區域2314中可摻雜有其他元素，例如五價元素，磷。在其他實施方式中，第二摻雜區域2314的摻雜也可與其他摻雜步驟進行調換或調整或者合併以滿足生產需求。
步驟106，在第一閘極絕緣層232上形成第一介電層235。具體地，如圖9A所示，將第一介電材料覆蓋在第一閘極絕緣層232、第二閘極絕緣層242以及第三閘極絕緣層251上；如圖9B所示，並利用第三光罩移除位於第二閘極絕緣層242以及第三閘極絕緣層251上的第一介電材料，以形成覆蓋第一閘極234的第一介電層235。在本實施方式中，第一介電材料為氮化矽。第三光罩可與第一光罩相同。在其他可替代實施方式中，第三光罩也可與第一光罩不同。
步驟107，在第一介電層235、第二閘極絕緣層242以及第三閘極絕緣層251上形成第二介電層236、第三介電層245以及第四介電層253。具體地，如圖10所示，將第二介電材料覆蓋在第一介電層235、第二閘極絕緣層242以及第三閘極絕緣層251上以形成第二介電層236、第三介電層245以及第四介電層253。在本實施方式中，第二介電材料為氧化矽。
步驟108，在第三介電層245以及第四介電層253上分別沉積形成第三半導體層246和第四半導體層254。第三半導體層246與第二閘極243相對設置，第四半導體層254與第三閘極252相對設置。具體地，可首先在所述第三介電層245以及第四介電層253上沉積氧化半導材料，再圖案化該氧化半導體材料以形成第三半導體層246和第四半導體層254。如圖11所示，在本實施方式中，第三半導體層46和第四半導體層均為銦鎵鋅氧化物(Indium Gallium Zinc Oxide，IGZO)半導體層。
步驟109，在與第一摻雜區域2312對應處開設第一過孔301及第二過孔302，在與第二半導體層241對應的位置處開設第三過孔304和第四過孔306。具體地，如圖12所示，第一過孔301和第二過孔302依次貫穿第二介電層236、第一介電層235以及第一閘極絕緣層231，且分別與對應的第一摻雜區域2312相對，以使得第一摻雜區域2312曝露。第三過孔304依次貫穿第三介電層245和第二閘極絕緣層242，以使得第二半導體層241部分曝露，第四過孔310貫穿第三介電層245，以使得第二閘極243部分曝露。
步驟110，在第二介電層236上形成第一源極237和第一汲極238，在第三介電層245上形成第二源極247和第二汲極248，在第四介電層253上形成第三源極255和第三汲極256。具體地，如圖13所示，該第一源極237、第一汲極238、第二源極247、第二汲極248、第三源極255和第三汲極256利用在第二介電層236、第三介電層245以及第四介電層253上形成金屬層，並圖案化金屬層以形成第一源極237、第一汲極238、第二源極247、第二汲極248、第三源極255和第三汲極256。可以理解，所述第三過孔304和第四過孔306之間的第三介電層245覆蓋在所述第二半導體層241，能夠在圖案化金屬層形成第二源極247和第二汲極248時對第二半導體層241進行保護，從而充當蝕刻阻擋層的作用。上述第一半導體層231、第一閘極絕緣層232、第一閘極234、第一介電層235、第二介電層236、第一源極237以及第一汲極238組成第一薄膜電晶體23。第二半導體層241、第二閘極絕緣層242、第二閘極243、第三介電層245、第三半導體層246、第二源極247以及第二汲極248組成第二薄膜電晶體24。第三閘極絕緣層251、第三閘極252、第四介電層253、第四半導體層254、第三源極255以及第三汲極256組成第三薄膜電晶體25。其中，第一薄膜電晶體23與第一驅動電路14或第二驅動電路16相配合，第二薄膜電晶體24用於驅動發光二極體的陽極，第三薄膜電晶體25用於驅動畫素單元18。該第二半導體層241、第二閘極243以及夾在二者之間的第二閘極絕緣層242共同構成畫素單元的存儲電容。
步驟111，在第二介電層236、第三介電層245、第四介電層253上形成平坦層26。如圖14所示，平坦層26覆蓋第一源極237、第一汲極238、第二源極247、第二汲極248、第三源極255和第三汲極256。平坦層26的兩端與基板21對齊。
步驟112，在平坦層26上形成電極層27。具體地，如圖15A所示，在平坦層26與第二源極247對應處開設第五過孔(圖未示)，如圖15B所示，並在平坦層26上形成電極層27。電極層27穿過第五過孔與第二源極247電性連接。在本實施方式中，電極層27為發光二極體的陽極。間隔物29大致呈等腰梯形。
步驟113，在平坦層26上形成發光定義層28，並在發光定義層28上形成至少兩個間隔物29。如圖16所示，間隔物29垂直設置于發光定義層28的二端部。
上述顯示器1的陣列基板20中，第一閘極絕緣層232、第二閘極絕緣層242以及第三閘極絕緣層251相互連接，且一體成型。第二介電層236、第三介電層245以及第四介電層253相互連接，且一體成型。其中，第二薄膜電晶體24和第三薄膜電晶體25上僅覆蓋氧化矽材質的第三介電層245和第四介電層253，避免氮元素對第二薄膜電晶體24和第三薄膜電晶體25的影響，進而提高第二薄膜電晶體24和第三薄膜電晶體25的可靠性。同時，為了增強顯示效果，可使用滿足一定條件的薄膜電晶體。上述一定條件包括：漏電流、切換速度、驅動強度、均一性等等。在本實施方式中，所述第一驅動電路的薄膜電晶體中的通道區域可由矽形成，以提高切換速度及驅動強度，且所述畫素中的薄膜電晶體中的通道區域可使用氧化半導體材料形成，以降低漏電流並提高均一性，因此本薄膜電晶體的組合能夠達到最佳效果。
1‧‧‧顯示器
11‧‧‧資料線
12‧‧‧掃描線
14‧‧‧第一驅動電路
16‧‧‧第二驅動電路
18‧‧‧畫素單元
130‧‧‧顯示區域
150‧‧‧非顯示區域
20‧‧‧陣列基板
21‧‧‧基板
23‧‧‧第一薄膜電晶體
24‧‧‧第二薄膜電晶體
25‧‧‧第三薄膜電晶體
231‧‧‧第一半導體層
232‧‧‧第一閘極絕緣層
234‧‧‧第一閘極
235‧‧‧第一介電層
236‧‧‧第二介電層
237‧‧‧第一源極
238‧‧‧第一汲極
2312‧‧‧第一摻雜區域
2314‧‧‧第二摻雜區域
2315‧‧‧非摻雜區域
241‧‧‧第二半導體層
242‧‧‧第二閘極絕緣層
243‧‧‧第二閘極
245‧‧‧第三介電層
246‧‧‧第三半導體層
247‧‧‧第二源極
248‧‧‧第二汲極
251‧‧‧第三閘極絕緣層
252‧‧‧第三閘極
253‧‧‧第四介電層
254‧‧‧第四半導體層
255‧‧‧第三源極
256‧‧‧第三汲極
26‧‧‧平坦層
27‧‧‧電極層
28‧‧‧發光定義層
29‧‧‧間隔物
301‧‧‧第一過孔
302‧‧‧第二過孔
304‧‧‧第三過孔
306‧‧‧第四過孔
無
21‧‧‧基板
23‧‧‧第一薄膜電晶體
24‧‧‧第二薄膜電晶體
25‧‧‧第三薄膜電晶體
231‧‧‧第一半導體層
232‧‧‧第一閘極絕緣層
234‧‧‧第一閘極
235‧‧‧第一介電層
236‧‧‧第二介電層
237‧‧‧第一源極
238‧‧‧第一汲極
2312‧‧‧第一摻雜區域
2314‧‧‧第二摻雜區域
2315‧‧‧非摻雜區域
241‧‧‧第二半導體層
242‧‧‧第二閘極絕緣層
243‧‧‧第二閘極
245‧‧‧第三介電層
246‧‧‧第三半導體層
247‧‧‧第二源極
248‧‧‧第二汲極
251‧‧‧第三閘極絕緣層
252‧‧‧第三閘極
253‧‧‧第四介電層
254‧‧‧第四半導體層
255‧‧‧第三源極
256‧‧‧第三汲極
26‧‧‧平坦層
27‧‧‧電極層
28‧‧‧發光定義層
29‧‧‧間隔物

Claims (13)

  1. 一種陣列基板，其包括基板、設置於基板上的多個第一薄膜電晶體、多個第二薄膜電晶體以及多個第三薄膜電晶體，其改良在於：第一薄膜電晶體為多晶矽薄膜電晶體，該第一薄膜電晶體包括依次設置於基板上的第一半導體層、第一閘極絕緣層、第一閘極、第一介電層、以及第二介電層；第二薄膜電晶體和第三薄膜電晶體為金屬氧化物薄膜電晶體；第二薄膜電晶體包括依次設置於基板上的第二半導體層、第二閘極絕緣層、第二閘極、第三介電層、以及第三半導體層；第三薄膜電晶體包括依次設置於基板上的第三閘極絕緣層、第三閘極、第四介電層以及第四半導體層，該第一介電層的材質為氮化矽，該第二介電層、第三介電層和第四介電層的材質均為氧化矽。
  2. 如申請專利範圍第1項所述的陣列基板，其中：該第一半導體層為多晶矽層，其包括兩個第一摻雜區域、兩個第二摻雜區域以及非摻雜區域，該兩個第二摻雜區域對稱設置於非摻雜區域的相對兩側，該兩個第一摻雜區域對稱設置於非摻雜區域的相對兩側，第一摻雜區域的摻雜濃度大於第二摻雜區域的摻雜濃度；該第二半導體層為摻雜的多晶矽層，該第三半導體層和第四半導體層的材質均為金屬氧化物半導體。
  3. 如申請專利範圍第2項所述的陣列基板，其中：該第一薄膜電晶體還包括第一源極和第一汲極，該第一源極和第一汲極形成在第二介電層上且位於該第一閘極的相對兩端，且經由穿過第一介電層、第二介電層以及第一閘極絕緣層的過孔與第一半導體層電性連接；該第二薄膜電晶體還包括第二源極以及第二汲極，該第二源極與第二汲極形成在該第三介電層上且對稱設置於第三半導體的相對兩側，且該第二源極經由穿過第三介電層以及第二閘極絕緣層的過孔與第二半導體層電性連接；該第三薄膜電晶體還包括第三源極以及第三汲極，第三源極與第三汲極形成在該第四介電層上且對稱設置於第二半導體相對兩側。
  4. 如申請專利範圍第2項所述的陣列基板，其中：第一閘極絕緣層、第二閘極絕緣層以及第三閘極絕緣層相互連接且一體成型，第二介電層、第三介電層以及第四介電層相互連接且一體成型。
  5. 如申請專利範圍第2項所述的陣列基板，其中：所述陣列基板還包括平坦層、電極層、發光定義層以及至少兩個間隔物，平坦層覆蓋第一薄膜電晶體、第二薄膜電晶體以及第三薄膜電晶體；電極層形成於平坦層上且穿過平坦層與第二源極電性連接；發光定義層形成於平坦層上，用於界定畫素單元的發光區域；間隔物垂直設置于發光定義層上。
  6. 一種陣列基板，其包括基板、設置於基板上的多個第一薄膜電晶體以及多個第三薄膜電晶體，其改良在於：第一薄膜電晶體為多晶矽薄膜電晶體，第三薄膜電晶體為金屬氧化物薄膜電晶體；該第一薄膜電晶體包括依次設置於基板上的第一半導體層、第一閘極絕緣層、第一閘極、第一介電層、以及第二介電層，該第一半導體層為摻雜的多晶矽層；該第三薄膜電晶體包括依次設置於基板上的第三閘極絕緣層、第三閘極、第四介電層以及第四半導體層，第一介電層的材質為氮化矽，該第二介電層和第四介電層的材質為氧化矽。
  7. 如申請專利範圍第6項所述的陣列基板，其中：該第一薄膜電晶體還包括第一源極和第一汲極，該第一源極和第一汲極形成在第二介電層上且位於該第一閘極的相對兩端，且經由穿過第一介電層、第二介電層以及第一閘極絕緣層的過孔與第一半導體層電性連接；該第三薄膜電晶體還包括第三源極以及第三汲極，第三源極與第三汲極形成在該第四介電層上且對稱設置於第二半導體相對兩側。
  8. 如申請專利範圍第6項所述的陣列基板，其中：第一閘極絕緣層以及第三閘極絕緣層相互連接且一體成型，第二介電層以及第四介電層相互連接且一體成型。
  9. 一種應用申請專利範圍第1-8項中任意一項所述陣列基板的顯示裝置。
  10. 一種陣列基板的製備方法，其包括如下步驟：
    提供一基板，在基板上形成多晶矽半導體層；
    對多晶矽層進行摻雜，並圖案化多晶矽層以形成第一半導體層和第二半導體層；
    對第一半導體層進行摻雜以形成兩個間隔設置的第一摻雜區域；
    在基板上形成第一閘極絕緣層、第二閘極絕緣層以及第三閘極絕緣層，並在第一閘極絕緣層上形成第一閘極，在第二閘極絕緣層上形成第二閘極，並在第三閘極絕緣層上形成第三閘極；
    對第一半導體層進行摻雜以形成兩個間隔設置的第二摻雜區域以及非摻雜區域；
    在第一閘極絕緣層上形成第一介電層，該第一介電層的材質為氮化矽；
    在第一介電層、第二閘極絕緣層以及第三閘極絕緣層上形成第二介電層、第三介電層以及第四介電層，該第二介電層、第三介電層以及第四介電層的材質均為氧化矽；
    在第三介電層以及第四介電層上分別沉積形成第三半導體層和第四半導體層，該第三半導體層和第四半導體層的材質均為金屬氧化物半導體；
    在與第一摻雜區域對應處開設第一過孔及第二過孔貫穿第二介電層、第一介電層以及第一閘極絕緣層，在第二半導體層對應的位置處分別開設第三過孔和第四過孔，第三過孔貫穿第三介電層和第二閘極絕緣層，第四過孔貫穿第三介電層；
    在第二介電層上且在第一過孔和第二過孔中分別形成第一源極和第一汲極，在第三介電層上且在第三過孔中形成第二源極和在第三介電層上形成第二汲極，在第四介電層上且在第四過孔中形成第三源極和在第四介電上形成第三汲極。
  11. 如申請專利範圍第10項所述的陣列基板的製備方法，其中：所述方法還包括在第二介電層、第三介電層、第四介電層上形成平坦層的步驟。
  12. 如申請專利範圍第11項所述的陣列基板的製備方法，其中：所述方法還包括在平坦層上形成電極層與第二源極電性連接；在平坦層上形成發光定義層，並在發光定義層上形成至少兩個間隔物的步驟。
  13. 如申請專利範圍第10項所述的陣列基板的製備方法，其中：在第一閘極絕緣層上形成該第一介電層的步驟為將氮化矽材料覆蓋在第一閘極絕緣層、第二閘極絕緣層以及第三閘極絕緣層上；並利用一光罩移除位於第二閘極絕緣層以及第三閘極絕緣層上的第一介電材料，以形成僅覆蓋第一閘極的第一介電層。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI675460B (zh) * 2018-12-10 2019-10-21 力晶積成電子製造股份有限公司 記憶體結構及其製造方法
US11552142B2 (en) 2017-12-08 2023-01-10 Samsung Display Co., Ltd. Display panel and method of fabricating the same

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11024725B2 (en) * 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
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CN106229297B (zh) * 2016-09-18 2019-04-02 深圳市华星光电技术有限公司 Amoled像素驱动电路的制作方法
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KR20180052166A (ko) * 2016-11-09 2018-05-18 엘지디스플레이 주식회사 포토 센서 및 그를 구비하는 표시장치
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US11227543B2 (en) * 2017-03-10 2022-01-18 Semiconductor Energy Laboratory Co., Ltd. Touch panel system, electronic device, and semiconductor device having a neural network
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TWI703735B (zh) * 2018-06-26 2020-09-01 鴻海精密工業股份有限公司 半導體基板、陣列基板、逆變器電路及開關電路
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CN110993613A (zh) * 2019-11-27 2020-04-10 武汉华星光电技术有限公司 阵列基板及其制造方法
CN111029346A (zh) * 2019-11-27 2020-04-17 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法及电子设备
CN111081719A (zh) * 2019-12-12 2020-04-28 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制造方法
CN110993698B (zh) * 2019-12-18 2022-11-29 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
JP7315452B2 (ja) * 2019-12-20 2023-07-26 株式会社ジャパンディスプレイ 光センサ装置
CN113096593A (zh) * 2019-12-23 2021-07-09 深圳市柔宇科技股份有限公司 像素单元、阵列基板与显示终端
JP2021128978A (ja) * 2020-02-12 2021-09-02 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
CN111312826B (zh) * 2020-03-04 2024-01-19 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法、显示模组及电子装置
CN111580304B (zh) * 2020-05-06 2021-09-24 Tcl华星光电技术有限公司 背光模组、显示面板及电子装置
CN111913323B (zh) * 2020-06-10 2023-08-25 上海天马微电子有限公司 阵列基板、背光模组、显示面板、显示装置及制备方法
CN111900187B (zh) * 2020-07-13 2022-04-12 淄博职业学院 一种艺术品展示屏及其制作方法
JP7396967B2 (ja) * 2020-07-30 2023-12-12 株式会社Subaru 車両用乗員報知装置
KR20220048250A (ko) 2020-10-12 2022-04-19 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 포함하는 표시장치
CN112331705B (zh) * 2020-10-28 2022-09-02 昆山工研院新型平板显示技术中心有限公司 显示基板及其制备方法
CN112436020B (zh) * 2020-11-23 2024-03-05 京东方科技集团股份有限公司 一种显示背板及其制备方法
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
CN113066798B (zh) * 2021-03-08 2022-11-08 武汉华星光电技术有限公司 驱动基板、显示面板及驱动基板的制备方法
CN113113424B (zh) * 2021-03-17 2024-02-02 武汉华星光电半导体显示技术有限公司 显示面板
CN113097230B (zh) * 2021-03-29 2023-01-10 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN113270424B (zh) * 2021-05-13 2022-07-29 Tcl华星光电技术有限公司 显示面板及其制备方法
CN113192990A (zh) * 2021-06-03 2021-07-30 合肥维信诺科技有限公司 阵列基板及其制作方法、显示面板
CN113421887A (zh) * 2021-06-15 2021-09-21 合肥维信诺科技有限公司 阵列基板、阵列基板的制备方法及显示面板
CN114156285B (zh) * 2021-11-30 2023-08-22 武汉华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示面板
TWI814534B (zh) * 2022-08-12 2023-09-01 超炫科技股份有限公司 像素佈局結構和電致發光顯示器

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001005038A (ja) * 1999-04-26 2001-01-12 Samsung Electronics Co Ltd 表示装置用薄膜トランジスタ基板及びその製造方法
JP5091378B2 (ja) * 2001-08-17 2012-12-05 株式会社ジャパンディスプレイセントラル レーザアニール方法及びレーザアニール条件決定装置
US6582875B1 (en) * 2002-01-23 2003-06-24 Eastman Kodak Company Using a multichannel linear laser light beam in making OLED devices by thermal transfer
TW200304227A (en) * 2002-03-11 2003-09-16 Sanyo Electric Co Top gate type thin film transistor
JP2003282885A (ja) * 2002-03-26 2003-10-03 Sharp Corp 半導体装置およびその製造方法
CA2443206A1 (en) * 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
KR101240648B1 (ko) * 2006-01-10 2013-03-08 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101431136B1 (ko) * 2007-03-08 2014-08-18 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
CN101681931B (zh) * 2007-08-09 2011-09-14 夏普株式会社 电路基板和显示装置
US8822995B2 (en) * 2008-07-24 2014-09-02 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
KR101048965B1 (ko) * 2009-01-22 2011-07-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치
JP5497417B2 (ja) * 2009-12-10 2014-05-21 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
US9111810B2 (en) * 2010-04-30 2015-08-18 Sharp Kabushiki Kaisha Circuit board and display device including first and second channel layers made of different semiconductor materials
TWI438868B (zh) * 2010-07-30 2014-05-21 Au Optronics Corp 互補金氧半電晶體及其製作方法
DE102011053665B4 (de) * 2010-09-20 2016-06-30 Lg Display Co., Ltd. Anzeigevorrichtung mit organischen lichtemittierenden Dioden und Herstellungsverfahren für dieselbe
US9634029B2 (en) * 2011-03-17 2017-04-25 E Ink Holdings Inc. Thin film transistor substrate and display device having same
JP6006572B2 (ja) * 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
TWI463663B (zh) * 2011-12-30 2014-12-01 Ind Tech Res Inst 半導體元件及其製造方法
TW201427026A (zh) * 2012-12-25 2014-07-01 Hon Hai Prec Ind Co Ltd 薄膜電晶體
TW201427025A (zh) * 2012-12-25 2014-07-01 Hon Hai Prec Ind Co Ltd 薄膜電晶體
KR20150019989A (ko) * 2013-08-12 2015-02-25 엘지디스플레이 주식회사 유기 발광 디스플레이 장치용 어레이 기판 및 이의 제조 방법
US9818765B2 (en) * 2013-08-26 2017-11-14 Apple Inc. Displays with silicon and semiconducting oxide thin-film transistors
US9412799B2 (en) * 2013-08-26 2016-08-09 Apple Inc. Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors
CN103456765B (zh) * 2013-09-10 2015-09-16 深圳市华星光电技术有限公司 有源式有机电致发光器件背板及其制作方法
JP2015060996A (ja) 2013-09-19 2015-03-30 株式会社東芝 表示装置及び半導体装置
EP2911195B1 (en) * 2014-02-24 2020-05-27 LG Display Co., Ltd. Thin film transistor substrate and display using the same
KR102172972B1 (ko) * 2014-02-26 2020-11-03 삼성디스플레이 주식회사 박막 트랜지스터 및 그의 제조방법
KR102298336B1 (ko) * 2014-06-20 2021-09-08 엘지디스플레이 주식회사 유기발광다이오드 표시장치
KR102204397B1 (ko) * 2014-07-31 2021-01-19 엘지디스플레이 주식회사 박막트랜지스터 및 이를 이용한 표시장치
US9543370B2 (en) * 2014-09-24 2017-01-10 Apple Inc. Silicon and semiconducting oxide thin-film transistor displays
CN104538401B (zh) * 2014-12-23 2017-05-03 深圳市华星光电技术有限公司 Tft基板结构
TWI565082B (zh) * 2015-04-14 2017-01-01 鴻海精密工業股份有限公司 薄膜電晶體及其製造方法
CN106298837A (zh) * 2015-05-29 2017-01-04 鸿富锦精密工业（深圳）有限公司 Oled显示面板及拼接显示装置
CN106558593B (zh) * 2015-09-18 2019-12-17 鸿富锦精密工业（深圳）有限公司 阵列基板、显示面板、显示装置及阵列基板的制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11552142B2 (en) 2017-12-08 2023-01-10 Samsung Display Co., Ltd. Display panel and method of fabricating the same
TWI816720B (zh) * 2017-12-08 2023-10-01 南韓商三星顯示器有限公司 顯示面板及其製造方法
US11877479B2 (en) 2017-12-08 2024-01-16 Samsung Display Co., Ltd. Display panel and method of fabricating the same
TWI675460B (zh) * 2018-12-10 2019-10-21 力晶積成電子製造股份有限公司 記憶體結構及其製造方法

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