TW201714296A - 陣列基板、顯示裝置及陣列基板的製備方法 - Google Patents

陣列基板、顯示裝置及陣列基板的製備方法 Download PDF

Info

Publication number
TW201714296A
TW201714296A TW105117101A TW105117101A TW201714296A TW 201714296 A TW201714296 A TW 201714296A TW 105117101 A TW105117101 A TW 105117101A TW 105117101 A TW105117101 A TW 105117101A TW 201714296 A TW201714296 A TW 201714296A
Authority
TW
Taiwan
Prior art keywords
film transistor
thin film
gate
layer
gate insulating
Prior art date
Application number
TW105117101A
Other languages
English (en)
Other versions
TWI606581B (zh
Inventor
林欣樺
高逸群
Original Assignee
鴻海精密工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 鴻海精密工業股份有限公司 filed Critical 鴻海精密工業股份有限公司
Publication of TW201714296A publication Critical patent/TW201714296A/zh
Application granted granted Critical
Publication of TWI606581B publication Critical patent/TWI606581B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1233—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一種陣列基板，其包括基板、設置於基板上的畫素陣列以及驅動電路，所述畫素陣列包括多個畫素單元，每一個畫素單元包括一發光二極體、一開關薄膜電晶體、一驅動薄膜電晶體，所述開關薄膜電晶體連接於所述驅動電路與所述驅動薄膜電晶體之間，所述驅動薄膜電晶體與所述開關薄膜電晶體均為金屬氧化物薄膜電晶體，所述驅動薄膜電晶體的閘極絕緣層的厚度大於所述開關薄膜電晶體的閘極絕緣層的厚度。本發明還提供應用該陣列基板的顯示裝置及該陣列基板的製備方法。本發明可精細的控制所述發光二極體的亮度變化，較好的定義灰階。

Description

陣列基板、顯示裝置及陣列基板的製備方法
本發明涉及一種陣列基板、應用該陣列基板的顯示裝置、以及該陣列基板的製備方法，尤其涉及一種應用於有機發光二極體Organic Light Emitting Diode，OLED）顯示裝置的陣列基板。
平面顯示裝置具有機身薄、省電、無輻射等眾多優點，得到了廣泛的應用。習知的平面顯示裝置主要包括液晶顯示器（Liquid Crystal Display，LCD）及有機電致發光器件（Organic Electroluminescence Device，OELD），也稱為有機發光二極體（Organic Light Emitting Diode，OLED）。一般而言，OLED顯示器的顯示陣列基板包括一基板，所述基板上設置有連接畫素單元的畫素陣列及驅動所述畫素陣列的驅動電路。
有鑑於此，有必要提供一種性能良好的陣列基板。
一種陣列基板，其包括基板、設置於基板上的畫素陣列以及驅動電路，所述畫素陣列包括多個畫素單元，每一個畫素單元包括一發光二極體、一開關薄膜電晶體、一驅動薄膜電晶體，所述開關薄膜電晶體連接於所述驅動電路與所述驅動薄膜電晶體之間以控制所述驅動薄膜電晶體的導通，該驅動薄膜電晶體包括依次設置在該基板上的緩衝層、閘極、第一閘極絕緣層、第二閘極絕緣層和金屬氧化物半導體層，該驅動薄膜電晶體還包括分別連接於該驅動薄膜電晶體的金屬氧化物半導體層的源極與汲極；該開關薄膜電晶體包括依次設置在該基板上的緩衝層、閘極、第二閘極絕緣層、和金屬氧化物半導體層，該開關薄膜電晶體還包括分別連接於該開關薄膜電晶體的金屬氧化物半導體層的源極與汲極。
一種應用上述陣列基板的顯示裝置。
一種陣列基板的製備方法，其包括如下步驟：
提供一基板，在基板上形成多晶矽半導體層；
在基板及多晶矽半導體層上沉積形成緩衝層，且在所述緩衝層上沉積第一金屬層，蝕刻並圖案化所述第一金屬層形成多晶矽薄膜電晶體的閘極、驅動薄膜電晶體的閘極、及開關薄膜電晶體的閘極，多晶矽薄膜電晶體的閘極正對所述多晶矽半導體層；
形成第一閘極絕緣層覆蓋所述多晶矽薄膜電晶體的閘極與驅動薄膜電晶體的閘極；
形成第二閘極絕緣層覆蓋所述第一閘極絕緣層及開關薄膜電晶體的閘極，並開設貫穿所述第一閘極絕緣層與所述第一閘極絕緣層的第一通孔與第二通孔以露出部分多晶矽半導體層；
在第二閘極絕緣層上沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而對應所述驅動薄膜電晶體的閘極及形成驅動薄膜電晶體的氧化物半導體層，並對應開關薄膜電晶體的閘極形成開關薄膜電晶體的氧化物半導體層；
沉積第二金屬層並蝕刻圖案化所述第二金屬層形成填充於第一通孔與第二通孔中且分別連接多晶矽半導體層的源極和汲極、連接所述驅動薄膜電晶體的氧化物半導體層的源極和汲極、及連接所述開關薄膜電晶體的氧化物半導體層的源極和汲極。
一種陣列基板的製備方法，其包括如下步驟：
提供一基板，在基板上形成多晶矽半導體層；
在基板及多晶矽半導體層上沉積形成緩衝層，且在所述緩衝層上沉積第一金屬層，蝕刻並圖案化所述第一金屬層形成多晶矽薄膜電晶體的閘極、驅動薄膜電晶體的閘極、及開關薄膜電晶體的閘極，多晶矽薄膜電晶體的閘極正對所述多晶矽半導體層；
形成第一閘極絕緣層覆蓋所述多晶矽薄膜電晶體的閘極與驅動薄膜電晶體的閘極；
形成第二閘極絕緣層覆蓋所述第一閘極絕緣層及開關薄膜電晶體的閘極，並開設貫穿所述第一閘極絕緣層與所述第一閘極絕緣層的第一通孔與第二通孔以露出部分多晶矽半導體層；
沉積第二金屬層於第二閘極絕緣層上並蝕刻圖案化所述第二金屬層形成填充於第一通孔與第二通孔中且分別連接多晶矽半導體層的源極和汲極、驅動薄膜電晶體的源極和汲極、開關薄膜電晶體的源極和汲極；
在第二閘極絕緣層上沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而形成驅動薄膜電晶體的氧化物半導體層以連接驅動薄膜電晶體的源極和汲極，並形成開關薄膜電晶體的氧化物半導體層以連接開關薄膜電晶體的源極和汲極。
一種陣列基板的製備方法，其包括如下步驟：
提供一基板，在基板上形成多晶矽半導體層；
在基板及多晶矽半導體層上沉積形成緩衝層，且在所述緩衝層上沉積第一金屬層，蝕刻並圖案化所述第一金屬層形成多晶矽薄膜電晶體的閘極、驅動薄膜電晶體的閘極、及開關薄膜電晶體的閘極，多晶矽薄膜電晶體的閘極正對所述多晶矽半導體層；
形成第一閘極絕緣層覆蓋所述多晶矽薄膜電晶體的閘極與驅動薄膜電晶體的閘極；
形成第二閘極絕緣層覆蓋所述第一閘極絕緣層及開關薄膜電晶體的閘極，並開設貫穿所述第一閘極絕緣層與所述第一閘極絕緣層的第一通孔與第二通孔以露出部分多晶矽半導體層；
在第二閘極絕緣層上沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而對應所述開關薄膜電晶體的閘極形成開關薄膜電晶體的氧化物半導體層；
沉積第二金屬層於第二閘極絕緣層上並蝕刻圖案化所述第二金屬層形成填充於第一通孔與第二通孔中且分別連接多晶矽半導體層的源極和汲極、驅動薄膜電晶體的源極和汲極、開關薄膜電晶體的源極和汲極；
在第二閘極絕緣層上沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而形成驅動薄膜電晶體的氧化物半導體層以連接驅動薄膜電晶體的源極和汲極。
所述陣列基板的開關薄膜電晶體包括一層閘極絕緣層，而所述驅動薄膜電晶體包括兩層閘極絕緣層，所述驅動薄膜電晶體的閘極絕緣層的厚度厚於所述開關薄膜電晶體的閘極絕緣層，從而可以使得所述驅動薄膜電晶體的閘極電容值小於所述開關薄膜電晶體的閘極電容值，進而使得所述驅動薄膜電晶體的亞閾值擺幅大於所述開關薄膜電晶體的亞閾值擺幅。由於驅動薄膜電晶體的亞閾值擺幅較大，可以精細的控制所述發光二極體的亮度變化，很好的定義灰階。同時由於開關薄膜電晶體的亞閾值擺幅較小，可以降低操作電壓與增加電路操作速度。
圖1為本發明的陣列基板的的示意圖。
圖2為圖1中畫素單元的等效電路圖。
圖3為圖1中陣列基板第一實施方式的剖面結構示意圖。
圖4至圖9為圖3所示的陣列基板各製作步驟之剖面結構示意圖。
圖10為圖3中陣列基板的製造流程圖。
圖11為圖1中陣列基板第二實施方式的剖面結構示意圖。
圖12為圖1中陣列基板第三實施方式的剖面結構示意圖。
請參考圖1，一種顯示器1000其包括一陣列基板100。所述顯示器1000為OLED顯示器。所述陣列基板100包括一基板10、多個畫素單元22連接形成的畫素陣列20、以及驅動電路30。所述基板10為平面矩形材料層，所述基板10可以是，但不限於，玻璃基板、石英基板或柔性基板。所述畫素陣列20用於為使用者顯示圖像，所述畫素陣列20由基板10上的多行及多列畫素單元22形成。所述驅動電路30包括閘極驅動器38及源極驅動器36。所述驅動電路30可由基板10上的薄膜電晶體形成。其中，所述陣列基板100為一混合型薄膜電晶體(Hybrid thin film transistor)陣列基板，且至少具有低溫多晶矽(Low Temperature Poly Silicon, LTPS)薄膜電晶體與金屬氧化物(Metal Oxide)薄膜電晶體設置於其上。
請一併參考圖2，每一畫素單元22包括一發光二極體221、一開關薄膜電晶體223、一驅動薄膜電晶體222及一電容C。所述開關薄膜電晶體223連接於所述驅動電路30與所述驅動薄膜電晶體222之間，以控制所述驅動薄膜電晶體222的導通與否。所述驅動薄膜電晶體222還連接於一電源VDD與所述發光二極體221之間。所述驅動薄膜電晶體222用於根據流過自身的電流控制所述發光二極體221發射的光的量。所述電容C為一存儲電容，連接於所述驅動薄膜電晶體222的閘極與汲極之間，以調整所述驅動薄膜電晶體222狀態進而調整所述述發光二極體221發射的光的量。其中所述驅動薄膜電晶體222為一金屬氧化物薄膜電晶體。本實施方式中，所述驅動薄膜電晶體222的亞閾值擺幅（Subthreshold Swing）大於所述開關薄膜電晶體223的亞閾值擺幅。其中亞閾值擺幅在數值上表示為使電晶體的汲極電流變化一個數量級時所需要的閘極電壓的增量。在本實施例中，所述陣列基板100藉由調整驅動薄膜電晶體222及開關薄膜電晶體223的閘極絕緣層的厚度來實現亞閾值擺幅的調整。
請參考圖3，為具有不同厚度閘極絕緣層的驅動薄膜電晶體222及開關薄膜電晶體223的陣列基板100的薄膜電晶體的剖面結構示意圖，可以理解的是，剖面結構示意圖僅示出所述陣列基板100的部分（如所述陣列基板100的一個多晶矽薄膜電晶體31、一個開關薄膜電晶體223及一個驅動薄膜電晶體222）。其中，所述多晶矽薄膜電晶體31可設置在驅動電路30中，用於形成所述閘極驅動器38或源極驅動器36所需的開關元件，也可設置在畫素單元22中，作為補償用的薄膜電晶體。
可以理解的是，所述陣列基板100還包括所述發光二極體221的陰極、陽極、發射材料（圖未示）。其中，所述發光二極體221的陽極連接所述驅動薄膜電晶體222的汲極，所述發射材料設置於所述發光二極體的陰極與陽極之間。所述陣列基板100還包括介電層（圖未示）及平坦層90，所述介電層形成於所述發射材料的兩側，用於界定畫素單元的佈局，所述平坦層90形成於所述薄膜電晶體的頂部。
本實施方式中，所述多晶矽薄膜電晶體31為一低溫多晶矽薄膜電晶體，所述驅動薄膜電晶體222為一金屬氧化物薄膜電晶體，所述開關薄膜電晶體223同樣為一金屬氧化物薄膜電晶體。
所述多晶矽薄膜電晶體31包括多晶矽半導體層301、緩衝層303、閘極305、第一閘極絕緣層307、第二閘極絕緣層308、源極309與汲極311。所述多晶矽半導體層301、緩衝層303、閘極305、第一閘極絕緣層307及第二閘極絕緣層308依次層疊設置在所述基板10上。所述源極309經貫穿所述緩衝層303、第一閘極絕緣層307、第二閘極絕緣層308的第一通孔313與所述多晶矽半導體層301連接，所述汲極311經貫穿所述緩衝層303、第一閘極絕緣層307、第二閘極絕緣層308的第二通孔315與所述多晶矽半導體層301連接。
所述驅動薄膜電晶體222包括緩衝層403、閘極405、第一閘極絕緣層407、第二閘極絕緣層408、源極409、汲極411及金屬氧化物半導體層413。所述緩衝層403、閘極405、第一閘極絕緣層407、第二閘極絕緣層408、所述金屬氧化物半導體層413依次設置在所述基板10上。所述源極409與所述汲極411同層設置。所述金屬氧化物半導體層413用於連接所述源極409與所述汲極411。在本實施方式中，所述金屬氧化物半導體層413為氧化銦鎵鋅(Indium Gallium Zinc Oxide, IGZO)。
所述開關薄膜電晶體223包括緩衝層503、閘極505、第二閘極絕緣層508、源極509、汲極511及金屬氧化物半導體層513。所述緩衝層503、閘極505、第二閘極絕緣層508及金屬氧化物半導體層513依次設置在所述基板10上。所述源極509與所述汲極511同層設置。所述金屬氧化物半導體層513用於連接所述源極509與所述汲極511。在本實施方式中，所述金屬氧化物半導體層513為氧化銦鎵鋅。
本實施方式中，所述緩衝層303、緩衝層403與緩衝層503同層設置，所述第一閘極絕緣層307與第一閘極絕緣層407同層設置，所述第二閘極絕緣層308、第二閘極絕緣層408與第二閘極絕緣層508同層設置。同層設置之所述緩衝層303、緩衝層403與緩衝層503採用絕緣材料製成。同層設置之所述第一絕緣層307、第一閘極絕緣層407採用氮化矽製成；同層設置之所述第二閘極絕緣層308、第二閘極絕緣層408與第二閘極絕緣層508採用氧化矽製成。或同層設置之所述第一絕緣層307、第一閘極絕緣層407採用氧化矽製成；同層設置之所述第二閘極絕緣層308、第二閘極絕緣層408與第二閘極絕緣層508採用氮化矽製成。
請一併參閱4至圖10，其中圖4至圖9為圖3所示的陣列基板100各製作步驟之結構示意圖，圖10為圖3所示的陣列基板100的製造流程圖。該陣列基板100的製備方法包括如下步驟：
步驟601，請參閱圖4，提供一基板10，在基板10上沉積非晶矽並經過退火(annealing)、離子摻雜形成多晶矽半導體層301。所述基板10可以是，但不限於，玻璃基板、石英基板或柔性基板。
步驟603，請參閱圖5，沉積形成所述緩衝層303、403、503，且在所述緩衝層303、403、503上沉積第一金屬層，蝕刻並圖案化所述第一金屬層形成閘極305、405、505。其中，在本實施方式中，先在形成有所述多晶矽半導體層301的所述基板10上塗布一絕緣材料層，從而形成覆蓋所述多晶矽半導體層301的緩衝層303以及緩衝層403與503。接著，沉積所述第一金屬層，藉由黃光微影蝕刻法蝕刻第一金屬層以形成所述閘極305、405、505，所述第一金屬層可為金屬材料或金屬合金，如鉬(Mo)、鋁(Al)、鉻(Cr)、銅(Cu)、釹(Nd)等。所述黃光微影蝕刻法為液晶顯示面板的陣列基板製備工藝中常見的工藝步驟，此處不再贅述。
步驟605，請參閱圖6，沉積一第一絕緣層並覆蓋所述閘極305、405、505，並利用光罩遮罩所述閘極305、405以剝離所述閘極505上的第一絕緣層形成所述第一閘極絕緣層307、407。
其中，所述第一絕緣層採用氮化矽或氧化矽製成，優選地，所述第一絕緣層採用氮化矽製成。
步驟607，請參閱圖7，接續沉積一第二絕緣層形成第二閘極絕緣層308、408、508，並利用光罩遮罩所述第二閘極絕緣層308、408、508及所述緩衝層203上定義出貫穿所述第一絕緣層與所述第二絕緣層的第一通孔313與第二通孔315，從而暴露處出部分多晶矽半導體層301。
其中，所述第二絕緣層採用氮化矽或氧化矽製成，優選地，所述第二絕緣層採用氧化矽製成。且所述當第一絕緣層為氮化矽，第二絕緣層為氧化矽時，會使得開關薄膜電晶體223及驅動薄膜電晶體222的功能穩定。
步驟609，請參閱圖8，沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而對應所述閘極405、505形成所述氧化物半導體層413、513。在本實施方式中，所述氧化物半導體層413、513材料為氧化銦鎵鋅(Indium Gallium Zinc Oxide, IGZO)、氧化鋅(Zinc Oxide, ZnO)、氧化銦(Indium Oxide, InO)、氧化鎵(Gallium Oxide, GaO)或其混合物。
步驟611，請參閱圖9，沉積第二金屬層並蝕刻圖案化所述第二金屬層形成源極309、409、509與汲極311、411及511。其中，所述源極309經所述第一通孔313與所述多晶矽半導體層301連接，所述汲極311經所述第二通孔315與所述多晶矽半導體層301連接。
步驟613，請參閱圖3，形成平坦化層90覆蓋所述薄膜電晶體31、222、223，然後形成發光二極體221的發射材料、陰極、介電層及與所述驅動薄膜電晶體222連接的陽極。
本實施方式中，所述多晶矽薄膜電晶體31為低溫多晶矽式薄膜電晶體，其可以但不限於設置於所述顯示器1000的非顯示區內。當所述多晶矽薄膜電晶體31設置於所述顯示器1000的非顯示區內時，所述多晶矽式薄膜電晶體31具有高電子遷移率進而提高的驅動電路的反應速度，且所述多晶矽式薄膜電晶體31體積小可使顯示裝置達到窄邊框。
進一步，所述開關薄膜電晶體223包括一層閘極絕緣層而所述驅動薄膜電晶體222包括兩層閘極絕緣層，所述驅動薄膜電晶體222的閘極絕緣層的厚度大於所述開關薄膜電晶體223的閘極絕緣層的厚度，從而可以使得所述驅動薄膜電晶體222的閘極電容值小於所述開關薄膜電晶體223的閘極電容值，進而使得所述驅動薄膜電晶體222的亞閾值擺幅大於所述開關薄膜電晶體223的亞閾值擺幅。由於驅動薄膜電晶體222的亞閾值擺幅較大，可以精細的控制所述發光二極體221的亮度變化，很好的定義灰階。同時由於開關薄膜電晶體223的亞閾值擺幅較小，可以降低操作電壓與增加電路操作速度。
請參考圖11，為OLED之陣列基板的薄膜電晶體第二實施方式的剖面結構示意圖。後續的描述中與前述實施方式相同的元件採用相同的元件標號，且本實施方式與前述實施方式的薄膜電晶體陣列的結構相同之處不再重複描述，後續僅描述不同之處。在本實施方式中，為避免氧化物薄膜電晶體進行高溫氫化製程時對所述金屬氧化物半導體的損害，所述驅動薄膜電晶體222的金屬氧化物半導體層413在驅動薄膜電晶體222的源極409與汲極411形成之後形成，以避免蝕刻所述第二金屬層形成源極409與汲極411時對所述金屬氧化物半導體413的損害。也就是說，所述驅動薄膜電晶體222的源極409與所述汲極411同層設置完成之後，所述金屬氧化物半導體層413對應閘極405設置在第二閘極絕緣層408上。
對應的，在製作如圖11所示的OLED之陣列基板時，在形成第二閘極絕緣層並定義第一及第二通孔之後，沉積金屬氧化物材料形成開關薄膜電晶體223的氧化物半導體層513，接著沉積第二金屬層並蝕刻圖案化所述第二金屬層形成所述多晶矽薄膜電晶體31、所述開關薄膜電晶體223及所述驅動薄膜電晶體222的源極與汲極，然後再次沉積金屬氧化物材料形成驅動薄膜電晶體222的金屬氧化物半導體層413。
如圖12所示，所述開關薄膜電晶體223或驅動薄膜電晶體222的金屬氧化物半導體層413、513均在形成源極409、509與汲極411、511之後形成，以避免蝕刻所述第二金屬層形成源極409、509與汲極411、511時，對所述金屬氧化物半導體造成損害。
可以理解的是，其他實施方式中，可選的，所述開關薄膜電晶體223或驅動薄膜電晶體222中其中之一的金屬氧化物半導體層413、513在形成源極409、509與汲極411、511之後形成。如，僅選擇開關薄膜電晶體223的金屬氧化物半導體層513在形成源極509與汲極511之後形成。
1000‧‧‧顯示器
100‧‧‧陣列基板
10‧‧‧基板
20‧‧‧畫素陣列
30‧‧‧驅動電路
36‧‧‧源極驅動器
38‧‧‧閘極驅動器
22‧‧‧畫素單元
223‧‧‧開關薄膜電晶體
222‧‧‧驅動薄膜電晶體
221‧‧‧發光二極體
31‧‧‧多晶矽薄膜電晶體
301‧‧‧多晶矽半導體層
303，403，503‧‧‧緩衝層
305，405，505‧‧‧閘極
307，407‧‧‧第一閘極絕緣層
308，408，508‧‧‧第二閘極絕緣層
309，409，509‧‧‧源極
311，411，511‧‧‧汲極
413，513‧‧‧金屬氧化物半導體層
313‧‧‧第一通孔
315‧‧‧第二孔
90‧‧‧平坦層
無
100‧‧‧陣列基板
10‧‧‧基板
223‧‧‧開關薄膜電晶體
222‧‧‧驅動薄膜電晶體
31‧‧‧多晶矽薄膜電晶體
301‧‧‧多晶矽半導體層
303，403，503‧‧‧緩衝層
305，405，505‧‧‧閘極
307，407‧‧‧第一閘極絕緣層
308，408，508‧‧‧第二閘極絕緣層
309，409，509‧‧‧源極
311，411，511‧‧‧汲極
413，513‧‧‧金屬氧化物半導體層
313‧‧‧第一通孔
315‧‧‧第二通孔
90‧‧‧平坦層

Claims (12)

  1. 一種陣列基板，其包括基板、設置於基板上的畫素陣列以及驅動電路，所述畫素陣列包括多個畫素單元，每一個畫素單元包括一發光二極體、一開關薄膜電晶體、一驅動薄膜電晶體，所述開關薄膜電晶體連接於所述驅動電路與所述驅動薄膜電晶體之間以控制所述驅動薄膜電晶體的導通，其改良在於：該驅動薄膜電晶體包括依次設置在該基板上的緩衝層、閘極、第一閘極絕緣層、第二閘極絕緣層和金屬氧化物半導體層，該驅動薄膜電晶體還包括分別連接於該驅動薄膜電晶體的金屬氧化物半導體層的源極與汲極；該開關薄膜電晶體包括依次設置在該基板上的緩衝層、閘極、第二閘極絕緣層、和金屬氧化物半導體層，該開關薄膜電晶體還包括分別連接於該開關薄膜電晶體的金屬氧化物半導體層的源極與汲極。
  2. 如申請專利範圍第1項所述的陣列基板，其中：所述陣列基板還包括至少一多晶矽薄膜電晶體，所述多晶矽薄膜電晶體包括依次設置在基板上的多晶矽半導體層、緩衝層、閘極、第一閘極絕緣層及第二閘極絕緣層。
  3. 如申請專利範圍第2項所述的陣列基板，其中：所述陣列基板還包括平坦化層，該平坦化層覆蓋所述開關薄膜電晶體、所述驅動薄膜電晶體和所述多晶矽薄膜電晶體。
  4. 如申請專利範圍第2項所述的陣列基板，其中：所述驅動電路包括閘極驅動器及源極驅動器，所述多晶矽薄膜電晶體設置在驅動電路中，用於形成所述閘極驅動器或源極驅動器的開關元件。
  5. 如申請專利範圍第2項所述的陣列基板，其中：所述多晶矽薄膜電晶體設置在所述畫素單元中。
  6. 如申請專利範圍第2項所述的陣列基板，其中：所述驅動薄膜電晶體、所述開關薄膜電晶體與所述多晶矽薄膜電晶體的緩衝層為同層設置，所述多晶矽薄膜電晶體與所述驅動薄膜電晶體的第一閘極絕緣層為同層設置，所述所述驅動薄膜電晶體、所述開關薄膜電晶體與與所述多晶矽薄膜電晶體的第二閘極絕緣層為同層設置
  7. 如申請專利範圍第6項所述的陣列基板，其中：所述多晶矽薄膜電晶體還包括分別貫穿所述緩衝層、第一閘極絕緣層、第二閘極絕緣層且與所述多晶矽半導體層連接的源極和汲極。
  8. 一種應用專利範圍第1-7項中任意一項所述陣列基板的顯示裝置。
  9. 一種陣列基板的製備方法，其包括如下步驟：
    提供一基板，在基板上形成多晶矽半導體層；
    在基板及多晶矽半導體層上沉積形成緩衝層，且在所述緩衝層上沉積第一金屬層，蝕刻並圖案化所述第一金屬層形成多晶矽薄膜電晶體的閘極、驅動薄膜電晶體的閘極、及開關薄膜電晶體的閘極，多晶矽薄膜電晶體的閘極正對所述多晶矽半導體層；
    形成第一閘極絕緣層覆蓋所述多晶矽薄膜電晶體的閘極與驅動薄膜電晶體的閘極；
    形成第二閘極絕緣層覆蓋所述第一閘極絕緣層及開關薄膜電晶體的閘極，並開設貫穿所述第一閘極絕緣層與所述第一閘極絕緣層的第一通孔與第二通孔以露出部分多晶矽半導體層；
    在第二閘極絕緣層上沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而對應所述驅動薄膜電晶體的閘極及形成驅動薄膜電晶體的氧化物半導體層，並對應開關薄膜電晶體的閘極形成開關薄膜電晶體的氧化物半導體層；
    沉積第二金屬層並蝕刻圖案化所述第二金屬層形成填充於第一通孔與第二通孔中且分別連接多晶矽半導體層的源極和汲極、連接所述驅動薄膜電晶體的氧化物半導體層的源極和汲極、及連接所述開關薄膜電晶體的氧化物半導體層的源極和汲極。
  10. 如申請專利範圍第9項所述的製備方法，其中：所述方法還包括形成平坦化層覆蓋所述開關薄膜電晶體、所述驅動薄膜電晶體和所述多晶矽薄膜電晶體；然後依次形成與所述驅動薄膜電晶體連接發射材料、陰極、介電層及陽極。
  11. 一種陣列基板的製備方法，其包括如下步驟：
    提供一基板，在基板上形成多晶矽半導體層；
    在基板及多晶矽半導體層上沉積形成緩衝層，且在所述緩衝層上沉積第一金屬層，蝕刻並圖案化所述第一金屬層形成多晶矽薄膜電晶體的閘極、驅動薄膜電晶體的閘極、及開關薄膜電晶體的閘極，多晶矽薄膜電晶體的閘極正對所述多晶矽半導體層；
    形成第一閘極絕緣層覆蓋所述多晶矽薄膜電晶體的閘極與驅動薄膜電晶體的閘極；
    形成第二閘極絕緣層覆蓋所述第一閘極絕緣層及開關薄膜電晶體的閘極，並開設貫穿所述第一閘極絕緣層與所述第一閘極絕緣層的第一通孔與第二通孔以露出部分多晶矽半導體層；
    沉積第二金屬層於第二閘極絕緣層上並蝕刻圖案化所述第二金屬層形成填充於第一通孔與第二通孔中且分別連接多晶矽半導體層的源極和汲極、驅動薄膜電晶體的源極和汲極、開關薄膜電晶體的源極和汲極；
    在第二閘極絕緣層上沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而形成驅動薄膜電晶體的氧化物半導體層以連接驅動薄膜電晶體的源極和汲極，並形成開關薄膜電晶體的氧化物半導體層以連接開關薄膜電晶體的源極和汲極。
  12. 一種陣列基板的製備方法，其包括如下步驟：
    提供一基板，在基板上形成多晶矽半導體層；
    在基板及多晶矽半導體層上沉積形成緩衝層，且在所述緩衝層上沉積第一金屬層，蝕刻並圖案化所述第一金屬層形成多晶矽薄膜電晶體的閘極、驅動薄膜電晶體的閘極、及開關薄膜電晶體的閘極，多晶矽薄膜電晶體的閘極正對所述多晶矽半導體層；
    形成第一閘極絕緣層覆蓋所述多晶矽薄膜電晶體的閘極與驅動薄膜電晶體的閘極；
    形成第二閘極絕緣層覆蓋所述第一閘極絕緣層及開關薄膜電晶體的閘極，並開設貫穿所述第一閘極絕緣層與所述第一閘極絕緣層的第一通孔與第二通孔以露出部分多晶矽半導體層；
    在第二閘極絕緣層上沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而對應所述開關薄膜電晶體的閘極形成開關薄膜電晶體的氧化物半導體層；
    沉積第二金屬層於第二閘極絕緣層上並蝕刻圖案化所述第二金屬層形成填充於第一通孔與第二通孔中且分別連接多晶矽半導體層的源極和汲極、驅動薄膜電晶體的源極和汲極、開關薄膜電晶體的源極和汲極；
    在第二閘極絕緣層上沉積金屬氧化物材料並圖案化所述金屬氧化物材料從而形成驅動薄膜電晶體的氧化物半導體層以連接驅動薄膜電晶體的源極和汲極。
TW105117101A 2015-09-18 2016-05-31 陣列基板、顯示裝置及陣列基板的製備方法 TWI606581B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562220257P 2015-09-18 2015-09-18
US201562220258P 2015-09-18 2015-09-18
US201562220261P 2015-09-18 2015-09-18
US201562220259P 2015-09-18 2015-09-18

Publications (2)

Publication Number Publication Date
TW201714296A true TW201714296A (zh) 2017-04-16
TWI606581B TWI606581B (zh) 2017-11-21

Family

ID=58283227

Family Applications (4)

Application Number Title Priority Date Filing Date
TW105117102A TWI619152B (zh) 2015-09-18 2016-05-31 陣列基板、顯示裝置及陣列基板的製備方法陣列基板
TW105117103A TWI618123B (zh) 2015-09-18 2016-05-31 陣列基板、顯示裝置及陣列基板的製備方法
TW105117101A TWI606581B (zh) 2015-09-18 2016-05-31 陣列基板、顯示裝置及陣列基板的製備方法
TW105117104A TWI606289B (zh) 2015-09-18 2016-05-31 陣列基板、顯示裝置及陣列基板的製備方法陣列基板

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW105117102A TWI619152B (zh) 2015-09-18 2016-05-31 陣列基板、顯示裝置及陣列基板的製備方法陣列基板
TW105117103A TWI618123B (zh) 2015-09-18 2016-05-31 陣列基板、顯示裝置及陣列基板的製備方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105117104A TWI606289B (zh) 2015-09-18 2016-05-31 陣列基板、顯示裝置及陣列基板的製備方法陣列基板

Country Status (3)

Country Link
US (7) US9768204B2 (zh)
CN (4) CN106558538B (zh)
TW (4) TWI619152B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI814534B (zh) * 2022-08-12 2023-09-01 超炫科技股份有限公司 像素佈局結構和電致發光顯示器

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11024725B2 (en) * 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
CN106558538B (zh) * 2015-09-18 2019-09-13 鸿富锦精密工业（深圳）有限公司 阵列基板、显示装置及阵列基板的制备方法
WO2021035416A1 (zh) * 2019-08-23 2021-03-04 京东方科技集团股份有限公司 显示装置及其制备方法
JP6758884B2 (ja) * 2016-04-01 2020-09-23 株式会社ジャパンディスプレイ 表示装置
CN105742364A (zh) * 2016-04-12 2016-07-06 中山大学 一种抑制有源沟道区光致漏电流产生的mos管及应用
JP6725317B2 (ja) * 2016-05-19 2020-07-15 株式会社ジャパンディスプレイ 表示装置
KR20180024817A (ko) * 2016-08-31 2018-03-08 엘지디스플레이 주식회사 멀티 타입의 박막 트랜지스터를 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
CN106229297B (zh) * 2016-09-18 2019-04-02 深圳市华星光电技术有限公司 Amoled像素驱动电路的制作方法
JP2018074076A (ja) * 2016-11-02 2018-05-10 株式会社ジャパンディスプレイ 表示装置
KR20180052166A (ko) * 2016-11-09 2018-05-18 엘지디스플레이 주식회사 포토 센서 및 그를 구비하는 표시장치
US11726376B2 (en) * 2016-11-23 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
JPWO2018163005A1 (ja) * 2017-03-10 2020-01-23 株式会社半導体エネルギー研究所 タッチパネルシステム、電子機器および半導体装置
US10840269B2 (en) * 2017-03-29 2020-11-17 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing semiconductor device
CN106847834B (zh) * 2017-03-30 2019-05-10 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板
CN106952928B (zh) * 2017-03-30 2018-10-23 深圳市华星光电技术有限公司 一种tft背板的制作方法及tft背板
CN108732609B (zh) * 2017-04-24 2022-01-25 睿生光电股份有限公司 感测装置
CN107146809A (zh) * 2017-05-16 2017-09-08 京东方科技集团股份有限公司 阵列基板及其制造方法
CN107248521B (zh) * 2017-06-19 2020-01-31 深圳市华星光电半导体显示技术有限公司 Amoled背板结构
CN109216373B (zh) 2017-07-07 2021-04-09 京东方科技集团股份有限公司 阵列基板及其制备方法
CN107818989B (zh) * 2017-10-20 2020-08-04 武汉华星光电技术有限公司 阵列基板及其制作方法
CN107731858B (zh) * 2017-10-27 2020-05-12 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示面板
CN108010917A (zh) 2017-11-02 2018-05-08 中华映管股份有限公司 有源器件阵列基板及其制作方法
KR102436813B1 (ko) 2017-12-08 2022-08-29 삼성디스플레이 주식회사 표시 패널 및 그 제조방법
CN108231795B (zh) * 2018-01-02 2020-06-30 京东方科技集团股份有限公司 阵列基板、制作方法、显示面板及显示装置
TWI703735B (zh) * 2018-06-26 2020-09-01 鴻海精密工業股份有限公司 半導體基板、陣列基板、逆變器電路及開關電路
CN110649003A (zh) * 2018-06-26 2020-01-03 鸿富锦精密工业（深圳）有限公司 半导体基板、阵列基板、逆变器电路及开关电路
JP7210179B2 (ja) * 2018-07-25 2023-01-23 株式会社ジャパンディスプレイ 半導体装置および半導体装置の製造方法
KR102664686B1 (ko) * 2018-10-22 2024-05-08 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
CN111092099A (zh) * 2018-10-23 2020-05-01 宸鸿光电科技股份有限公司 有机发光二极管显示装置
TWI675460B (zh) * 2018-12-10 2019-10-21 力晶積成電子製造股份有限公司 記憶體結構及其製造方法
CN109659235B (zh) * 2018-12-14 2021-12-03 武汉华星光电半导体显示技术有限公司 Tft的制备方法、tft、阵列基板及显示装置
CN110148600A (zh) * 2019-05-05 2019-08-20 深圳市华星光电半导体显示技术有限公司 阵列基板及制备方法
CN110289269A (zh) * 2019-06-26 2019-09-27 上海天马微电子有限公司 一种阵列基板、显示面板和显示装置
TWI726348B (zh) * 2019-07-03 2021-05-01 友達光電股份有限公司 半導體基板
CN112635571B (zh) * 2019-09-24 2024-08-02 乐金显示有限公司 薄膜晶体管及其制造方法及包括该薄膜晶体管的显示设备
CN110620120B (zh) * 2019-09-25 2022-07-29 福州京东方光电科技有限公司 阵列基板及其制作方法、显示装置
CN110707098B (zh) * 2019-09-27 2022-08-23 上海天马微电子有限公司 阵列基板、显示面板、显示装置及阵列基板的制备方法
CN110660814A (zh) * 2019-09-29 2020-01-07 合肥京东方卓印科技有限公司 一种阵列基板、显示面板和阵列基板的制作方法
CN110690170A (zh) * 2019-10-23 2020-01-14 成都中电熊猫显示科技有限公司 阵列基板的制作方法、阵列基板及显示面板
CN110828486B (zh) * 2019-11-19 2023-05-12 云谷（固安）科技有限公司 显示面板的制作方法和显示面板
CN110993613A (zh) * 2019-11-27 2020-04-10 武汉华星光电技术有限公司 阵列基板及其制造方法
CN111029346A (zh) * 2019-11-27 2020-04-17 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法及电子设备
CN111081719A (zh) * 2019-12-12 2020-04-28 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制造方法
CN110993698B (zh) * 2019-12-18 2022-11-29 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
JP7315452B2 (ja) * 2019-12-20 2023-07-26 株式会社ジャパンディスプレイ 光センサ装置
CN113096593A (zh) * 2019-12-23 2021-07-09 深圳市柔宇科技股份有限公司 像素单元、阵列基板与显示终端
JP2021128978A (ja) * 2020-02-12 2021-09-02 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
CN111312826B (zh) * 2020-03-04 2024-01-19 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法、显示模组及电子装置
CN111580304B (zh) * 2020-05-06 2021-09-24 Tcl华星光电技术有限公司 背光模组、显示面板及电子装置
CN111913323B (zh) * 2020-06-10 2023-08-25 上海天马微电子有限公司 阵列基板、背光模组、显示面板、显示装置及制备方法
CN111900187B (zh) * 2020-07-13 2022-04-12 淄博职业学院 一种艺术品展示屏及其制作方法
JP7396967B2 (ja) * 2020-07-30 2023-12-12 株式会社Subaru 車両用乗員報知装置
KR20220048250A (ko) 2020-10-12 2022-04-19 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 포함하는 표시장치
CN112331705B (zh) * 2020-10-28 2022-09-02 昆山工研院新型平板显示技术中心有限公司 显示基板及其制备方法
CN112436020B (zh) * 2020-11-23 2024-03-05 京东方科技集团股份有限公司 一种显示背板及其制备方法
KR20220072930A (ko) * 2020-11-25 2022-06-03 삼성디스플레이 주식회사 표시 장치
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
TWI778496B (zh) 2021-01-15 2022-09-21 友達光電股份有限公司 主動元件及其製造方法
CN113066798B (zh) * 2021-03-08 2022-11-08 武汉华星光电技术有限公司 驱动基板、显示面板及驱动基板的制备方法
CN113113424B (zh) * 2021-03-17 2024-02-02 武汉华星光电半导体显示技术有限公司 显示面板
CN113097230B (zh) * 2021-03-29 2023-01-10 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN113270424B (zh) * 2021-05-13 2022-07-29 Tcl华星光电技术有限公司 显示面板及其制备方法
CN113192990B (zh) * 2021-06-03 2024-08-13 合肥维信诺科技有限公司 阵列基板及其制作方法、显示面板
CN113421887A (zh) * 2021-06-15 2021-09-21 合肥维信诺科技有限公司 阵列基板、阵列基板的制备方法及显示面板
CN113327949A (zh) * 2021-06-16 2021-08-31 京东方科技集团股份有限公司 显示面板、显示面板的制作方法及显示装置
CN114156285B (zh) * 2021-11-30 2023-08-22 武汉华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示面板

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001005038A (ja) * 1999-04-26 2001-01-12 Samsung Electronics Co Ltd 表示装置用薄膜トランジスタ基板及びその製造方法
JP5091378B2 (ja) * 2001-08-17 2012-12-05 株式会社ジャパンディスプレイセントラル レーザアニール方法及びレーザアニール条件決定装置
US6582875B1 (en) * 2002-01-23 2003-06-24 Eastman Kodak Company Using a multichannel linear laser light beam in making OLED devices by thermal transfer
TW200304227A (en) * 2002-03-11 2003-09-16 Sanyo Electric Co Top gate type thin film transistor
JP2003282885A (ja) * 2002-03-26 2003-10-03 Sharp Corp 半導体装置およびその製造方法
CA2443206A1 (en) * 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
KR101240648B1 (ko) * 2006-01-10 2013-03-08 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101431136B1 (ko) * 2007-03-08 2014-08-18 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
CN101681931B (zh) * 2007-08-09 2011-09-14 夏普株式会社 电路基板和显示装置
US8822995B2 (en) * 2008-07-24 2014-09-02 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
KR101048965B1 (ko) * 2009-01-22 2011-07-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치
JP5497417B2 (ja) * 2009-12-10 2014-05-21 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
US9111810B2 (en) * 2010-04-30 2015-08-18 Sharp Kabushiki Kaisha Circuit board and display device including first and second channel layers made of different semiconductor materials
TWI438868B (zh) * 2010-07-30 2014-05-21 Au Optronics Corp 互補金氧半電晶體及其製作方法
DE102011053665B4 (de) * 2010-09-20 2016-06-30 Lg Display Co., Ltd. Anzeigevorrichtung mit organischen lichtemittierenden Dioden und Herstellungsverfahren für dieselbe
US9634029B2 (en) * 2011-03-17 2017-04-25 E Ink Holdings Inc. Thin film transistor substrate and display device having same
JP6006572B2 (ja) * 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 半導体装置
TWI463663B (zh) * 2011-12-30 2014-12-01 Ind Tech Res Inst 半導體元件及其製造方法
TW201427025A (zh) * 2012-12-25 2014-07-01 Hon Hai Prec Ind Co Ltd 薄膜電晶體
TW201427026A (zh) * 2012-12-25 2014-07-01 Hon Hai Prec Ind Co Ltd 薄膜電晶體
KR20150019989A (ko) * 2013-08-12 2015-02-25 엘지디스플레이 주식회사 유기 발광 디스플레이 장치용 어레이 기판 및 이의 제조 방법
US9818765B2 (en) * 2013-08-26 2017-11-14 Apple Inc. Displays with silicon and semiconducting oxide thin-film transistors
US9564478B2 (en) * 2013-08-26 2017-02-07 Apple Inc. Liquid crystal displays with oxide-based thin-film transistors
CN103456765B (zh) * 2013-09-10 2015-09-16 深圳市华星光电技术有限公司 有源式有机电致发光器件背板及其制作方法
JP2015060996A (ja) 2013-09-19 2015-03-30 株式会社東芝 表示装置及び半導体装置
EP2911195B1 (en) * 2014-02-24 2020-05-27 LG Display Co., Ltd. Thin film transistor substrate and display using the same
KR102172972B1 (ko) * 2014-02-26 2020-11-03 삼성디스플레이 주식회사 박막 트랜지스터 및 그의 제조방법
KR102298336B1 (ko) * 2014-06-20 2021-09-08 엘지디스플레이 주식회사 유기발광다이오드 표시장치
KR102204397B1 (ko) * 2014-07-31 2021-01-19 엘지디스플레이 주식회사 박막트랜지스터 및 이를 이용한 표시장치
US9543370B2 (en) * 2014-09-24 2017-01-10 Apple Inc. Silicon and semiconducting oxide thin-film transistor displays
CN104538401B (zh) * 2014-12-23 2017-05-03 深圳市华星光电技术有限公司 Tft基板结构
TWI565082B (zh) * 2015-04-14 2017-01-01 鴻海精密工業股份有限公司 薄膜電晶體及其製造方法
CN106298837A (zh) * 2015-05-29 2017-01-04 鸿富锦精密工业（深圳）有限公司 Oled显示面板及拼接显示装置
CN106558538B (zh) * 2015-09-18 2019-09-13 鸿富锦精密工业（深圳）有限公司 阵列基板、显示装置及阵列基板的制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI814534B (zh) * 2022-08-12 2023-09-01 超炫科技股份有限公司 像素佈局結構和電致發光顯示器

Also Published As

Publication number Publication date
TWI618123B (zh) 2018-03-11
US20170084636A1 (en) 2017-03-23
US20190252418A1 (en) 2019-08-15
US20180006065A1 (en) 2018-01-04
US11289518B2 (en) 2022-03-29
TW201721721A (zh) 2017-06-16
US10978498B2 (en) 2021-04-13
CN106558538A (zh) 2017-04-05
CN106558594A (zh) 2017-04-05
CN106558538B (zh) 2019-09-13
US10192897B2 (en) 2019-01-29
TWI606581B (zh) 2017-11-21
TW201714008A (zh) 2017-04-16
CN106558593B (zh) 2019-12-17
US9768204B2 (en) 2017-09-19
CN106558592B (zh) 2019-06-18
TWI606289B (zh) 2017-11-21
TW201721720A (zh) 2017-06-16
TWI619152B (zh) 2018-03-21
US20170084639A1 (en) 2017-03-23
US10319752B2 (en) 2019-06-11
CN106558593A (zh) 2017-04-05
US10276606B2 (en) 2019-04-30
US20170084641A1 (en) 2017-03-23
CN106558592A (zh) 2017-04-05
CN106558594B (zh) 2019-09-13
US20170084642A1 (en) 2017-03-23
US20190109160A1 (en) 2019-04-11

Similar Documents

Publication Publication Date Title
TWI606581B (zh) 陣列基板、顯示裝置及陣列基板的製備方法
TWI580021B (zh) 有機發光二極體顯示器及製造其之方法
EP2278618B1 (en) Organic light emitting display device and fabricating method thereof
JP5368381B2 (ja) 有機発光表示装置及びその製造方法
US20100182223A1 (en) Organic light emitting display device
WO2017206243A1 (zh) Amoled像素驱动电路的制作方法
US20100176394A1 (en) Thin film transistor and flat panel display device having the same
WO2017210926A1 (zh) Tft背板的制作方法及tft背板
JP2005167051A (ja) 薄膜トランジスタおよび薄膜トランジスタの製造方法
JP2008091599A (ja) 薄膜トランジスタおよびその製造方法ならびに表示装置
WO2017024658A1 (zh) 有机发光显示器及其制造方法
WO2015100808A1 (zh) 一种具有氧化物薄膜电晶体的发光装置及其制造方法
JP2003223120A (ja) 半導体表示装置
WO2004010741A1 (ja) アクティブマトリクス有機ｅｌ表示装置及びその製造方法
WO2015100897A1 (zh) 阵列基板及其制备方法、显示装置
US20170352711A1 (en) Manufacturing method of tft backplane and tft backplane
WO2014000367A1 (zh) 薄膜晶体管、阵列基板及其制造方法
US11380798B2 (en) Thin-film device
WO2022227167A1 (zh) 显示面板及其制备方法
CN109545836B (zh) 一种oled显示装置及其制作方法
JP7055285B2 (ja) 半導体装置、表示装置、半導体装置の製造方法及び表示装置の製造方法
JP2022077412A (ja) 薄膜トランジスタ回路
TWI703735B (zh) 半導體基板、陣列基板、逆變器電路及開關電路
WO2020155107A1 (zh) 薄膜晶体管及其制造方法、驱动电路、显示屏
US20130001572A1 (en) Display device, thin-film transistor used for display device, and method of manufacturing thin-film transistors