CN109216373B - 阵列基板及其制备方法 - Google Patents

阵列基板及其制备方法 Download PDF

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CN109216373B
CN109216373B CN201710549810.6A CN201710549810A CN109216373B CN 109216373 B CN109216373 B CN 109216373B CN 201710549810 A CN201710549810 A CN 201710549810A CN 109216373 B CN109216373 B CN 109216373B
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active region
thin film
film transistor
array substrate
substrate
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CN109216373A (zh
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张锋
吕志军
刘文渠
董立文
张世政
党宁
刘志勇
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BOE Technology Group Co Ltd
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Abstract

本发明提供一种阵列基板及其制备方法，属于阵列基板技术领域，其可至少部分解决现有的阵列基板中的低温多晶硅薄膜晶体管的有源区容易因紫外光照射而性能漂移的问题。本发明的阵列基板包括：基底；第一薄膜晶体管，其包括由硅基半导体构成的第一有源区；第二薄膜晶体管，其包括由金属氧化物半导体构成的第二有源区；与所述第二有源区同层设置且材质相同的保护层，第一薄膜晶体管导通时第一有源区导电的部分在基底上的投影不超出保护层在基底上的投影，且保护层与第一有源区之间设有绝缘层。

Description

阵列基板及其制备方法
技术领域
本发明属于阵列基板技术领域，具体涉及一种阵列基板及其制备方法。
背景技术
低温多晶硅(LTPS)薄膜晶体管因优异的性能被广泛用于显示装置(如液晶显示装置、有机发光二极管显示装置)的阵列基板中。
但是，在形成低温多晶硅薄膜晶体管后，可能还要在阵列基板中继续形成像素界定层、隔垫物等由有机材料构成的有机结构，在形成这些有机材料的曝光过程中，需要使用很大剂量的紫外光。而紫外光照射到低温多晶硅薄膜晶体管的有源区后，会使低温多晶硅半导体的性能发生变化，造成低温多晶硅薄膜晶体管的特性漂移，降低阵列基板产品的性能稳定性。
发明内容
本发明至少部分解决现有的阵列基板中的低温多晶硅薄膜晶体管的有源区容易因紫外光照射而性能漂移的问题，提供一种可避免硅基半导体薄膜晶体管性能漂移的阵列基板及其制备方法。
解决本发明技术问题所采用的技术方案是一种阵列基板，包括：
基底；
第一薄膜晶体管，其包括由硅基半导体构成的第一有源区；
第二薄膜晶体管，其包括由金属氧化物半导体构成的第二有源区；
与所述第二有源区同层设置且材质相同的保护层，第一薄膜晶体管导通时第一有源区导电的部分在基底上的投影不超出保护层在基底上的投影，且保护层与第一有源区之间设有绝缘层。
优选的是，所述阵列基板具有在曝光过程中光线射入的曝光侧，所述保护层比第一有源区更靠近阵列基板的曝光侧。
进一步优选的是，所述第一薄膜晶体管和第二薄膜晶体管设于基底的同一侧，所述保护层比第一有源区更远离基底；所述阵列基板的曝光侧为设有第一薄膜晶体管和第二薄膜晶体管的一侧。
进一步优选的是，所述第一薄膜晶体管为底栅型结构。
进一步优选的是，所述阵列基板还包括：由有机材料通过曝光工艺形成的有机结构，所述有机结构比比第二有源区更远离所述基底。
进一步优选的是，所述有机结构包括平坦化层、像素界定层、隔垫物中的任意一种或多种。
优选的是，所述第一有源区在基底上的投影不超出保护层在基底上的投影。
优选的是，所述第一有源区由低温多晶硅构成。
优选的是，所述第二有源区由氧化铟镓锌、氧化铟锡锌、氧化铟锌、氧化铝锌、氧化锌中的任意一种构成。
优选的是，所述阵列基板包括用于进行显示的显示区和位于显示区外围的周边区；所述第一薄膜晶体管设于周边区中；所述第二薄膜晶体管设于显示区中。
优选的是，所述第一薄膜晶体管为顶栅型结构。
解决本发明技术问题所采用的技术方案是一种阵列基板的制备方法，包括：
在基底上形成第一薄膜晶体管的第一有源区的步骤，以及形成同层设置且材质相同的保护层和第二薄膜晶体管的第二有源区的步骤；其中，
所述第一有源区由硅基半导体构成；
所述第二有源区由金属氧化物半导体构成；
所述第一薄膜晶体管导通时第一有源区导电的部分在基底上的投影不超出保护层在基底上的投影，且保护层与第一有源区之间设有绝缘层。
优选的是，所述阵列基板具有在曝光过程中光线射入的曝光侧，所述保护层比第一有源区更靠近阵列基板的曝光侧。
进一步优选的是，所述形成第一薄膜晶体管的第一有源区的步骤，以及形成同层设置且材质相同的保护层和第二薄膜晶体管的第二有源区的步骤具体包括：通过构图工艺在基底上形成包括第一薄膜晶体管的第一有源区的图形；在完成前述步骤的基底上形成绝缘层；通过构图工艺在完成前述步骤的基底上形成包括保护层和第二薄膜晶体管的第二有源区的图形；所述阵列基板的曝光侧为设有第一薄膜晶体管和第二薄膜晶体管的一侧。
进一步优选的是，在所述形成包括保护层和第二薄膜晶体管的第二有源区的图形后，还包括：通过曝光工艺，用有机材料形成有机结构。
进一步优选的是，所述有机结构包括平坦化层、像素界定层、隔垫物中的任意一种或多种。
优选的是，所述第一有源区由低温多晶硅构成；所述第二有源区由氧化铟镓锌、氧化铟锡锌、氧化铟锌、氧化铝锌、氧化锌中的任意一种构成。
本发明的阵列基板中，通过设置金属氧化物半导体的保护层，可阻挡射向第一有源区(硅基半导体)的紫外光(包括曝光用的紫外光和环境中的紫外光)，避免第一薄膜晶体管特性漂移；同时，由于保护层是与第二有源区同层设置的，故其不需要通过单独的工艺制备；因此，该阵列基板可在不增加制备工艺复杂性的情况下，保证阵列基板产品的性能稳定。
附图说明
图1为本发明的实施例的一种阵列基板在第一薄膜晶体管和第二薄膜晶体管处的局部剖面结构示意图；
图2现有阵列基板中形成隔垫物前多个硅基半导体薄膜晶体管的IV曲线；
图3现有阵列基板中形成隔垫物后多个硅基半导体薄膜晶体管的IV曲线；
图4为一些金属氧化物半导体的透光率曲线；
其中，附图标记为：1、第一薄膜晶体管；11、第一有源区；2、第二薄膜晶体管；21、第二有源区；3、保护层；5、绝缘层；9、基底。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
在本发明中，两结构“同层设置”是指二者是由同一个材料层形成的，故它们在层叠关系上处于相同层中，但并不代表它们与基底间的距离相等，也不代表它们与基底间的其它层结构完全相同。
在本发明中，“构图工艺”是指形成具有特定的图形的结构的步骤，其可为光刻工艺，光刻工艺包括形成材料层、涂布光刻胶、曝光、显影、刻蚀、光刻胶剥离等步骤中的一步或多步；当然，“构图工艺”也可为压印工艺、喷墨打印工艺等其它工艺。
实施例1：
如图1至图4所示，本实施例提供一种阵列基板。该阵列基板可为液晶显示装置、有机发光二极管(OLED)显示装置等显示装置中使用的阵列基板，其包括：
基底9：
第一薄膜晶体管1，其包括由硅基半导体构成的第一有源区11；
第二薄膜晶体管2，其包括由金属氧化物半导体构成的第二有源区21。
也就是说，该阵列基板中包括两种不同类型的薄膜晶体管，一种是用硅基半导体作为有源区(第一有源区11)的第一薄膜晶体管1，另一种则是用金属氧化物半导体作为有源区(第二有源区21)的第二薄膜晶体管2。阵列基板中不同位置的薄膜晶体管有不同的性能要求，而以上两种薄膜晶体管分别具有不同的特性，故可分别将它们用于阵列基板的不同位置，以满足相应的性能要求。
优选的，阵列基板包括用于进行显示的显示区和位于显示区外围的周边区；第一薄膜晶体管1设于周边区中；第二薄膜晶体管2设于显示区中。
在阵列基板的显示区中，薄膜晶体管主要用于组成像素驱动电路，而第二薄膜晶体管2(金属氧化物半导体薄膜晶体管)的漏电流小，故用其组成像素驱动电路可避免存储电容漏电，利于实现低频驱动，可降低功耗。而周边区中的薄膜晶体管主要用于组成栅极驱动电路(GOA)等驱动结构，第一薄膜晶体管1(硅基半导体薄膜晶体管)的迁移率高，故尺寸可较小，将其用于边缘区中利于实现窄边框设计。
当然，以上薄膜晶体管的应用只是一种具体例子，而非本发明保护范围的限定，两种薄膜晶体管也可有其它不同的具体应用形式。
当然，在第一薄膜晶体管1和第二薄膜晶体管2中，还分别具有源极、漏极、栅极、栅绝缘层等其它结构，且这些结构可能同层设置，例如第一薄膜晶体管1的源漏极可与第二薄膜晶体管2的栅极同层。另外，第一薄膜晶体管1和第二薄膜晶体管2的具体结构也有很多不同形式，例如其可为顶栅型结构也可为底栅型结构，其源漏极可通过过孔与有源区相连也可直接与有源区搭接，其源漏极可位于有源区之上也可位于有源区之下等。而在阵列基板中，还可包括栅线、数据线、像素电极、公共电极、阴极、阳极等其它结构。
总之，阵列基板中许多结构的具体形式都是多样的，可根据具体要求设定，在此不再详细描述。
本实施例的阵列基板中，还包括：
与第二有源区21同层设置且材质相同的保护层3，第一薄膜晶体管1导通时第一有源区11导电的部分在基底9上的投影不超出保护层3在基底9上的投影，而保护层3与第一有源区11之间设有绝缘层5。
如图1所示，在该阵列基板中，在制备第二有源区21的同时，还用形成第二有源区21的材料层(金属氧化物半导体层)形成独立的保护层3，故该保护层3也由金属氧化物半导体构成，且该保护层3至少位于第一有源区11的沟道的位置。
而且，在保护层3与第一有源区11之间设有绝缘层5，以保证保护层3与第一有源区11分开，故其不是第一薄膜晶体管的一部分。具体的，该绝缘层5可为一个层或由多个层构成，其优选是阵列基板中原有的其它绝缘层结构，如层间绝缘层、栅绝缘层、钝化层等。
当然，以上保护层3并不起到有源区的作用，故从避免对第二有源区21的性能产生影响的角度考虑，该保护层3与第二有源区21优选是相互隔开的。
硅基半导体虽然具有良好的性能，但紫外光的照射却会影响其性能，造成第一薄膜晶体管1的特性漂移，影响阵列基板性能的稳定性。例如，形成隔垫物(PS)时要采用大剂量的紫外光进行曝光，而如图2、图3所示，在现有的阵列基板中，在形成隔垫物(PS)前多个低温多晶硅薄膜晶体管的IV曲线(电流-电压曲线)十分接近，几乎重合；而在形成隔垫物(PS)后，各低温多晶硅薄膜晶体管的IV曲线则产生了很大偏差，这表明紫外光的照射能使低温多晶硅薄膜晶体管的特性产生很大的、不可控的漂移。
而如图4所示，金属氧化物半导体虽然一般对可见光透明，但其对紫外光(波长400nm以下)却有很好的截止作用，可阻挡紫外光的通过。
本实施例的阵列基板中，通过设置金属氧化物半导体的保护层3，可阻挡射向第一有源区11的紫外光(包括曝光用的紫外光和环境中的紫外光)，避免第一薄膜晶体管1特性漂移；同时，由于保护层3是与第二有源区21同层设置的，故其不需要通过单独的工艺制备；因此，该阵列基板可在不增加制备工艺复杂性的情况下，保证阵列基板产品的性能稳定。
优选的，第一有源区11在基底9上的投影不超出保护层3在基底9上的投影。
显然，为避免紫外光对第一有源区11性能的影响，保护层3至少应对应第一有源区11的沟道，但从实现更好的保护的角度考虑，第一有源区11也可对应整个第一有源区11。当然，如果保护层3范围超出第一有源区11，也是可行的。
优选的，第一有源区11由低温多晶硅构成。优选的，第二有源区21由氧化铟镓锌、氧化铟锡锌、氧化铟锌、氧化铝锌、氧化锌中的任意一种构成。
相对于非晶硅等其它的硅基半导体，低温多晶硅(LTPS)具有更优的性能，且其特性更容易受到紫外光的影响，故第一有源区11优选由低温多晶硅构成。
而氧化铟镓锌(IGZO)、氧化铟锡锌(ITZO)、氧化铟锌(IZO)、氧化铝锌(AZO)、氧化锌(ZnO)等金属氧化物半导体既具有良好的半导体特性，同时有可很好的阻挡紫外光，故是优选的第二有源区12(和保护层3)的材料。
优选的，阵列基板具有在曝光过程中光线射入的曝光侧，保护层3比第一有源区11更靠近阵列基板的曝光侧。
在形成阵列基板中的许多结构时要进行曝光，而曝光所用的光线(紫外光)都是从阵列基板的一个确定侧射入的，该侧即为阵列基板的曝光侧。相对于环境中的紫外光，曝光用的紫外光剂量更大，对第一有源区11性能的影响更明显。因此，如图1所示，优选使保护层3比第一有源区11更靠近阵列基板的曝光侧，这样在对阵列基板进行曝光时，曝光光线必然先照到保护层3上后才可能照射到第一有源区11，从而可更好的避免第一有源区11受到紫外光照射。
当然，应当理解，如果保护层3比第一有源区11更远离阵列基板的曝光侧，则其同样可起到防止环境中的紫外光照射第一有源区11的作用。
优选的，第一薄膜晶体管1和第二薄膜晶体管2设于基底9的同一侧，保护层3比第一有源区11更远离基底9；阵列基板的曝光侧为设有第一薄膜晶体管1和第二薄膜晶体管2的一侧。
如图1所示，阵列基板中的结构通常都设于基底9的同一侧，而曝光光线通常也都是从基底9设有结构的一侧射入的，即该侧通常为阵列基板的曝光侧。而在这种情况下，保护层3应当比第一有源区11更远离基底9的(或者说位于第一有源区11上方)，这样才能保证其比第一有源区11更靠近曝光侧。
优选的，第一薄膜晶体管1为底栅型结构。
栅极一般是由金属构成的，故也能阻挡紫外光。而若第一薄膜晶体管1采用底栅型结构，则第一有源区11两侧分别设有可阻挡紫外光的保护层3和栅极，故对两侧的紫外光(如来自环境的紫外光)均有很好的阻挡作用。
当然，由于硅基半导体薄膜晶体管常规上更多采用顶栅型结构，故作为本实施例的另一种方式，以上第一薄膜晶体管1也可为顶栅型结构。
更优选的，阵列基板还包括：由有机材料通过曝光工艺形成的有机结构，有机结构比第二有源区21更远离基底9。更优选的，有机结构包括平坦化层、像素界定层、隔垫物中的任意一种或多种。
阵列基板中许多结构的制备都包括曝光步骤，但其中的无机结构(如栅极、源极、漏极、引线、栅绝缘层)多是通过光刻工艺制备的，即在形成无机材料层后，再通过涂布光刻胶、曝光、显影、刻蚀、光刻胶剥离等步骤形成无机结构；在这些无机结构的曝光步骤中所用的紫外光剂量一般较小，故这些紫外光即使照射到第一有源区11上对其性能的影响也不大。因此，虽然在形成第一有源区11后到形成保护层3之前，还可能进行一些形成其它结构(如栅绝缘层)的曝光步骤，但其一般对第一有源区11的性能影响不大。当然，为了更好的避免紫外光对第一有源区11的影响，故在第一有源区11与保护层3之间，需要进行曝光步骤的其它无机结构也应尽量的少。
但阵列基板中还可能包括一些由有机材料构成的有机结构，例如平坦化层、像素界定层、隔垫物等。这些有机结构一般厚度较大，且是直接通过对有机材料层进行曝光工艺而得到的(即直接将有机材料层被曝光的位置保留或去除，而不使用光刻胶)，故其中使用的紫外光剂量一般远大于形成无机结构的曝光中所用的剂量，故其可能对第一有源区11的性能造成严重影响。
因此，这些有机结构优选设于比保护层3更远离基底9的位置，即其应当在形成保护层3后才制备且比保护层更靠近曝光侧，这样，在形成这些有机结构时曝光用的紫外光可被保护层3挡住，有效避免紫外光对第一有源区11的影响。
实施例2：
如图1中图4所示，本实施例提供一种阵列基板的制备方法，其包括：
在基底9上形成第一薄膜晶体管1的第一有源区11的步骤，以及形成同层设置且材质相同的保护层3和第二薄膜晶体管2的第二有源区21的步骤；其中，
第一有源区11由硅基半导体构成；
第二有源区21由金属氧化物半导体构成；
第一薄膜晶体管1导通时第一有源区11导电的部分在基底9上的投影不超出保护层3在基底9上的投影，而保护层3与第一有源区11之间设有绝缘层5。
本实施例的阵列基板制备方法制备的是上述的阵列基板，故其可避免紫外光对第一有源区11的照射，从而保证阵列基板产品性能的稳定。
优选的，阵列基板具有在曝光过程中光线射入的曝光侧，保护层3比第一有源区11更靠近阵列基板的曝光侧。更优选的，阵列基板的曝光侧为设有第一薄膜晶体管1和第二薄膜晶体管2的一侧，而以上形成第一有源区11、第二有源区21的步骤具体可包括：
通过构图工艺在基底9上形成包括第一薄膜晶体管1的第一有源区11的图形；
在完成前述步骤的基底9上形成绝缘层5；
通过构图工艺在完成前述步骤的基底9上形成包括保护层3和第二薄膜晶体管2的第二有源区21的图形。
也就是说，当阵列基板设有结构的一侧为曝光侧时，则只要在制备中先形成第一有源区11，后形成第二有源区21和保护层3，即可保证保护层3比第一有源区11更靠近曝光侧。
更优选的，在形成包括保护层3和第二薄膜晶体管2的第二有源区21的图形后，还包括：通过曝光工艺，用有机材料形成有机结构。更优选的，有机结构包括平坦化层、像素界定层、隔垫物中的任意一种或多种。
也就是说，若阵列基板中还包括前述的有机结构，则其应当在形成保护层3后制备，以保证保护层3可起到阻止紫外光照射第一有源区11的作用。
优选的，第一有源区11由低温多晶硅构成；第二有源区21由氧化铟镓锌、氧化铟锡锌、氧化铟锌、氧化铝锌、氧化锌中的任意一种构成。
实施例3：
本实施例提供一种显示装置，其包括上述的阵列基板。
具体的，该显示装置可为液晶显示面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (17)

1.一种阵列基板，包括：
基底；
第一薄膜晶体管，其包括由硅基半导体构成的第一有源区；
第二薄膜晶体管，其包括由金属氧化物半导体构成的第二有源区；
其特征在于，所述阵列基板还包括：
与所述第二有源区同层设置且材质相同的保护层，第一薄膜晶体管导通时第一有源区导电的部分在基底上的投影不超出保护层在基底上的投影，且保护层与第一有源区之间设有绝缘层。
2.根据权利要求1所述的阵列基板，其特征在于，具有在曝光过程中光线射入的曝光侧，
所述保护层比第一有源区更靠近阵列基板的曝光侧。
3.根据权利要求2所述的阵列基板，其特征在于，所述第一薄膜晶体管和第二薄膜晶体管设于基底的同一侧，所述保护层比第一有源区更远离基底；
所述阵列基板的曝光侧为设有第一薄膜晶体管和第二薄膜晶体管的一侧。
4.根据权利要求3所述的阵列基板，其特征在于，
所述第一薄膜晶体管为底栅型结构。
5.根据权利要求4所述的阵列基板，其特征在于，还包括：
由有机材料通过曝光工艺形成的有机结构，所述有机结构比第二有源区更远离所述基底。
6.根据权利要求5所述的阵列基板，其特征在于，
所述有机结构包括平坦化层、像素界定层、隔垫物中的任意一种或多种。
7.根据权利要求1所述的阵列基板，其特征在于，
所述第一有源区在基底上的投影不超出保护层在基底上的投影。
8.根据权利要求1所述的阵列基板，其特征在于，
所述第一有源区由低温多晶硅构成。
9.根据权利要求1所述的阵列基板，其特征在于，
所述第二有源区由氧化铟镓锌、氧化铟锡锌、氧化铟锌、氧化铝锌、氧化锌中的任意一种构成。
10.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板包括用于进行显示的显示区和位于显示区外围的周边区；
所述第一薄膜晶体管设于周边区中；
所述第二薄膜晶体管设于显示区中。
11.根据权利要求1所述的阵列基板，其特征在于，
所述第一薄膜晶体管为顶栅型结构。
12.一种阵列基板的制备方法，其特征在于，包括：
在基底上形成第一薄膜晶体管的第一有源区的步骤，以及形成同层设置且材质相同的保护层和第二薄膜晶体管的第二有源区的步骤；其中，
所述第一有源区由硅基半导体构成；
所述第二有源区由金属氧化物半导体构成；
所述第一薄膜晶体管导通时第一有源区导电的部分在基底上的投影不超出保护层在基底上的投影，且保护层与第一有源区之间设有绝缘层。
13.根据权利要求12所述的阵列基板的制备方法，其特征在于，
所述阵列基板具有在曝光过程中光线射入的曝光侧，
所述保护层比第一有源区更靠近阵列基板的曝光侧。
14.根据权利要求13所述的阵列基板的制备方法，其特征在于，所述形成第一薄膜晶体管的第一有源区的步骤，以及形成同层设置且材质相同的保护层和第二薄膜晶体管的第二有源区的步骤具体包括：
通过构图工艺在基底上形成包括第一薄膜晶体管的第一有源区的图形；
在完成前述步骤的基底上形成绝缘层；
通过构图工艺在完成前述步骤的基底上形成包括保护层和第二薄膜晶体管的第二有源区的图形；
所述阵列基板的曝光侧为设有第一薄膜晶体管和第二薄膜晶体管的一侧。
15.根据权利要求14所述的阵列基板的制备方法，其特征在于，在所述形成包括保护层和第二薄膜晶体管的第二有源区的图形后，还包括：
通过曝光工艺，用有机材料形成有机结构。
16.根据权利要求15所述的阵列基板的制备方法，
所述有机结构包括平坦化层、像素界定层、隔垫物中的任意一种或多种。
17.根据权利要求12所述的阵列基板的制备方法，
所述第一有源区由低温多晶硅构成；
所述第二有源区由氧化铟镓锌、氧化铟锡锌、氧化铟锌、氧化铝锌、氧化锌中的任意一种构成。
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