SG10201809095SA - Exposure apparatus, exposure method, and method for producing device - Google Patents

Exposure apparatus, exposure method, and method for producing device

Info

Publication number
SG10201809095SA
SG10201809095SA SG10201809095SA SG10201809095SA SG10201809095SA SG 10201809095S A SG10201809095S A SG 10201809095SA SG 10201809095S A SG10201809095S A SG 10201809095SA SG 10201809095S A SG10201809095S A SG 10201809095SA SG 10201809095S A SG10201809095S A SG 10201809095SA
Authority
SG
Singapore
Prior art keywords
liquid
substrate
exposure
exposure apparatus
onto
Prior art date
Application number
SG10201809095SA
Other languages
English (en)
Inventor
Hiroyuki Nagasaka
Soichi Owa
Yasufumi Nishii
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of SG10201809095SA publication Critical patent/SG10201809095SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • User Interface Of Digital Computer (AREA)
SG10201809095SA 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and method for producing device SG10201809095SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003049365 2003-02-26
JP2003110748 2003-04-15
JP2003320100 2003-09-11

Publications (1)

Publication Number Publication Date
SG10201809095SA true SG10201809095SA (en) 2018-11-29

Family

ID=33101941

Family Applications (4)

Application Number Title Priority Date Filing Date
SG2012087615A SG2012087615A (en) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and method for producing device
SG2008042996A SG183572A1 (en) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and method for producing device
SG10201401559QA SG10201401559QA (en) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and method for producing device
SG10201809095SA SG10201809095SA (en) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and method for producing device

Family Applications Before (3)

Application Number Title Priority Date Filing Date
SG2012087615A SG2012087615A (en) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and method for producing device
SG2008042996A SG183572A1 (en) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and method for producing device
SG10201401559QA SG10201401559QA (en) 2003-02-26 2004-02-26 Exposure apparatus, exposure method, and method for producing device

Country Status (9)

Country Link
US (15) US7268854B2 (zh)
EP (9) EP2945016B1 (zh)
JP (11) JP4640516B2 (zh)
KR (11) KR101381538B1 (zh)
CN (2) CN102495540B (zh)
HK (9) HK1168912A1 (zh)
SG (4) SG2012087615A (zh)
TW (6) TWI621923B (zh)
WO (1) WO2004086468A1 (zh)

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003289271A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
SG2012087615A (en) 2003-02-26 2015-08-28 Nippon Kogaku Kk Exposure apparatus, exposure method, and method for producing device
EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
CN101813892B (zh) * 2003-04-10 2013-09-25 株式会社尼康 沉浸式光刻装置及使用光刻工艺制造微器件的方法
KR101369016B1 (ko) * 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
TWI421911B (zh) * 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1494079B1 (en) * 2003-06-27 2008-01-02 ASML Netherlands B.V. Lithographic Apparatus
JP4515385B2 (ja) 2003-07-09 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
WO2005006418A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
TWI474132B (zh) 2003-10-28 2015-02-21 尼康股份有限公司 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI519819B (zh) 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
TWI505329B (zh) 2004-02-06 2015-10-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
DE102004013886A1 (de) 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem
KR101441777B1 (ko) 2004-03-25 2014-09-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
EP2490248A3 (en) 2004-04-19 2018-01-03 Nikon Corporation Exposure apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070103661A1 (en) * 2004-06-04 2007-05-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070216889A1 (en) * 2004-06-04 2007-09-20 Yasufumi Nishii Exposure Apparatus, Exposure Method, and Method for Producing Device
SG10201607447RA (en) 2004-06-10 2016-10-28 Nikon Corp Exposure equipment, exposure method and device manufacturing method
US8373843B2 (en) 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070139628A1 (en) * 2004-06-10 2007-06-21 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101505756B1 (ko) * 2004-06-10 2015-03-26 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
US8508713B2 (en) 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070222959A1 (en) * 2004-06-10 2007-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
DE602005022708D1 (de) * 2004-06-15 2010-09-16 Quantum Semiconductor Llc Mit mehreren seitenverhältnissen betreibbare abbildungseinrichtungen
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI506674B (zh) 2004-09-17 2015-11-01 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
US7133114B2 (en) 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI588872B (zh) * 2004-11-18 2017-06-21 尼康股份有限公司 Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method
KR101559621B1 (ko) * 2004-12-06 2015-10-13 가부시키가이샤 니콘 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및 디바이스 제조 방법
US7180571B2 (en) * 2004-12-08 2007-02-20 Asml Netherlands B.V. Lithographic projection apparatus and actuator
US9224632B2 (en) 2004-12-15 2015-12-29 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device fabricating method
EP1681597B1 (en) * 2005-01-14 2010-03-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20160135859A (ko) 2005-01-31 2016-11-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006261606A (ja) * 2005-03-18 2006-09-28 Canon Inc 露光装置、露光方法及びデバイス製造方法
US9239524B2 (en) 2005-03-30 2016-01-19 Nikon Corporation Exposure condition determination method, exposure method, exposure apparatus, and device manufacturing method involving detection of the situation of a liquid immersion region
US20070132976A1 (en) * 2005-03-31 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
TW200644079A (en) * 2005-03-31 2006-12-16 Nikon Corp Exposure apparatus, exposure method, and device production method
US7411654B2 (en) * 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
KR101344142B1 (ko) 2005-04-25 2013-12-23 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
CN100555568C (zh) 2005-04-28 2009-10-28 株式会社尼康 曝光方法及曝光装置、以及元件制造方法
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2660854B1 (en) 2005-05-12 2017-06-21 Nikon Corporation Projection optical system, exposure apparatus and exposure method
KR20080018158A (ko) 2005-06-21 2008-02-27 가부시키가이샤 니콘 노광 장치 및 노광 방법, 메인터넌스 방법과 디바이스 제조방법
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
US7170583B2 (en) * 2005-06-29 2007-01-30 Asml Netherlands B.V. Lithographic apparatus immersion damage control
KR20080026082A (ko) 2005-06-30 2008-03-24 가부시키가이샤 니콘 노광장치 및 방법, 노광장치의 메인터넌스 방법 및디바이스 제조방법
KR101449055B1 (ko) 2005-08-23 2014-10-08 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
US7751026B2 (en) 2005-08-25 2010-07-06 Nikon Corporation Apparatus and method for recovering fluid for immersion lithography
JPWO2007043535A1 (ja) * 2005-10-07 2009-04-16 株式会社ニコン 光学特性計測方法、露光方法及びデバイス製造方法、並びに検査装置及び計測方法
WO2007055199A1 (ja) 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び方法、並びにデバイス製造方法
US20070127002A1 (en) * 2005-11-09 2007-06-07 Nikon Corporation Exposure apparatus and method, and device manufacturing method
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
KR20080071552A (ko) 2005-12-06 2008-08-04 가부시키가이샤 니콘 노광 방법, 노광 장치 및 디바이스 제조 방법
US7782442B2 (en) 2005-12-06 2010-08-24 Nikon Corporation Exposure apparatus, exposure method, projection optical system and device producing method
TW200722935A (en) 2005-12-06 2007-06-16 Nikon Corp Exposure apparatus, exposure method, projection optical system and device manufacturing method
US7932994B2 (en) * 2005-12-28 2011-04-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8953148B2 (en) * 2005-12-28 2015-02-10 Nikon Corporation Exposure apparatus and making method thereof
KR101312862B1 (ko) 2006-01-19 2013-09-30 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 패턴 형성 장치, 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
WO2007094407A1 (ja) 2006-02-16 2007-08-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
WO2007094414A1 (ja) 2006-02-16 2007-08-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JPWO2007094470A1 (ja) 2006-02-16 2009-07-09 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
EP1986224A4 (en) 2006-02-16 2012-01-25 Nikon Corp EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
EP3115844B1 (en) 2006-02-21 2018-08-15 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US8908145B2 (en) 2006-02-21 2014-12-09 Nikon Corporation Pattern forming apparatus and pattern forming method, movable body drive system and movable body drive method, exposure apparatus and exposure method, and device manufacturing method
EP3267259A1 (en) 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
WO2007102484A1 (ja) 2006-03-07 2007-09-13 Nikon Corporation デバイス製造方法、デバイス製造システム及び測定検査装置
KR20080114691A (ko) 2006-03-13 2008-12-31 가부시키가이샤 니콘 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070291261A1 (en) * 2006-04-14 2007-12-20 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP5151977B2 (ja) 2006-05-10 2013-02-27 株式会社ニコン 露光装置及びデバイス製造方法
CN102298274A (zh) 2006-05-18 2011-12-28 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
KR20090023335A (ko) 2006-05-22 2009-03-04 가부시키가이샤 니콘 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법
KR20090023331A (ko) 2006-05-23 2009-03-04 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법 및 장치, 그리고 디바이스 제조 방법
WO2007138834A1 (ja) 2006-05-31 2007-12-06 Nikon Corporation 露光装置及び露光方法
WO2008001871A1 (fr) * 2006-06-30 2008-01-03 Nikon Corporation Procédé de maintenance, procédé d'exposition et procédé de fabrication d'appareil et de dispositif
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
WO2008044612A1 (en) 2006-09-29 2008-04-17 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8208116B2 (en) * 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US20080158531A1 (en) * 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP5055971B2 (ja) 2006-11-16 2012-10-24 株式会社ニコン 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法
US7948616B2 (en) 2007-04-12 2011-05-24 Nikon Corporation Measurement method, exposure method and device manufacturing method
WO2008146819A1 (ja) 2007-05-28 2008-12-04 Nikon Corporation 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
US8164736B2 (en) * 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8098362B2 (en) 2007-05-30 2012-01-17 Nikon Corporation Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US8547527B2 (en) 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
KR101427071B1 (ko) 2007-07-24 2014-08-07 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US9304412B2 (en) 2007-08-24 2016-04-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
US8023106B2 (en) 2007-08-24 2011-09-20 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US20090051895A1 (en) * 2007-08-24 2009-02-26 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, device manufacturing method, and processing system
US8867022B2 (en) 2007-08-24 2014-10-21 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US8218129B2 (en) 2007-08-24 2012-07-10 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
KR101562073B1 (ko) 2007-10-16 2015-10-21 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
KR101546987B1 (ko) 2007-10-16 2015-08-24 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
US8279399B2 (en) 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9013681B2 (en) * 2007-11-06 2015-04-21 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
WO2009060585A1 (ja) * 2007-11-07 2009-05-14 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US9256140B2 (en) * 2007-11-07 2016-02-09 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction
US8665455B2 (en) * 2007-11-08 2014-03-04 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US8422015B2 (en) 2007-11-09 2013-04-16 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US8711327B2 (en) * 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR20100102580A (ko) * 2007-12-17 2010-09-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
TWI454851B (zh) 2007-12-28 2014-10-01 尼康股份有限公司 An exposure apparatus, a moving body driving system, a pattern forming apparatus, and an exposure method, and an element manufacturing method
NL1036715A1 (nl) 2008-04-16 2009-10-19 Asml Netherlands Bv Lithographic apparatus.
WO2009145048A1 (ja) 2008-05-28 2009-12-03 株式会社ニコン 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法
US20100165309A1 (en) * 2008-07-10 2010-07-01 Nikon Corporation Deformation measuring apparatus, exposure apparatus, jig for the deformation measuring apparatus, position measuring method and device fabricating method
JP4922359B2 (ja) * 2008-07-25 2012-04-25 エーエスエムエル ネザーランズ ビー．ブイ． 流体ハンドリング構造、リソグラフィ装置及びデバイス製造方法
US8384875B2 (en) 2008-09-29 2013-02-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8619231B2 (en) 2009-05-21 2013-12-31 Nikon Corporation Cleaning method, exposure method, and device manufacturing method
WO2011053004A2 (ko) * 2009-10-29 2011-05-05 주식회사 엘지화학 저반사 및 고접촉각을 갖는 기판 및 이의 제조방법
EP2502115A4 (en) * 2009-11-20 2013-11-06 Pelican Imaging Corp RECORDING AND PROCESSING IMAGES THROUGH A MONOLITHIC CAMERA ARRAY WITH HETEROGENIC IMAGE CONVERTER
US9651873B2 (en) 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
US9057955B2 (en) 2013-01-22 2015-06-16 Nikon Corporation Functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method
US9352073B2 (en) 2013-01-22 2016-05-31 Niko Corporation Functional film
WO2014132923A1 (ja) 2013-02-28 2014-09-04 株式会社ニコン 摺動膜、摺動膜が形成された部材、及びその製造方法
US20140292111A1 (en) * 2013-03-28 2014-10-02 Ebara Corporation Stage device and electron beam application apparatus
KR20230107706A (ko) 2015-02-23 2023-07-17 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고디바이스 제조 방법
CN111158220A (zh) 2015-02-23 2020-05-15 株式会社尼康 测量装置及方法、光刻系统、曝光装置及方法
KR20240010551A (ko) 2015-02-23 2024-01-23 가부시키가이샤 니콘 기판 처리 시스템 및 기판 처리 방법, 그리고 디바이스 제조 방법
CN109863457A (zh) 2016-08-24 2019-06-07 株式会社尼康 测量系统及基板处理系统、以及元件制造方法
EP3521932A4 (en) 2016-09-30 2020-05-27 Nikon Corporation MEASURING SYSTEM, SUBSTRATE PROCESSING SYSTEM, AND DEVICE MANUFACTURING METHOD
JP7431597B2 (ja) * 2020-02-05 2024-02-15 キヤノン株式会社 振動制御装置、露光装置、および物品製造方法

Family Cites Families (246)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
EP0023231B1 (de) 1979-07-27 1982-08-11 Tabarelli, Werner, Dr. Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) * 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6194342U (zh) 1984-11-27 1986-06-18
JPS6265326A (ja) * 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
JPH0263664A (ja) 1988-08-31 1990-03-02 Keihin Seiki Mfg Co Ltd 真空ダイカスト装置
JPH069195B2 (ja) * 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
US5304759A (en) 1992-10-15 1994-04-19 Johnson Service Company Direct mount pressure control with a field adjustable trip point and reset point
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JPH07220990A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5661092A (en) * 1995-09-01 1997-08-26 The University Of Connecticut Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof
US6297871B1 (en) * 1995-09-12 2001-10-02 Nikon Corporation Exposure apparatus
US6104687A (en) * 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
EP0951054B1 (en) 1996-11-28 2008-08-13 Nikon Corporation Aligner and method for exposure
JP3728613B2 (ja) * 1996-12-06 2005-12-21 株式会社ニコン 走査型露光装置の調整方法及び該方法を使用する走査型露光装置
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
DE69735016T2 (de) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
DE69829614T2 (de) 1997-03-10 2006-03-09 Asml Netherlands B.V. Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
US5744294A (en) * 1997-04-30 1998-04-28 Eastman Kodak Company Radiographic element modified to provide protection from visual fatigue
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6563565B2 (en) * 1997-08-27 2003-05-13 Nikon Corporation Apparatus and method for projection exposure
WO1999025011A1 (fr) 1997-11-12 1999-05-20 Nikon Corporation Appareil d'exposition par projection
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
AU1505699A (en) 1997-12-12 1999-07-05 Nikon Corporation Projection exposure method and projection aligner
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
AU4975499A (en) * 1998-07-08 2000-02-01 Bryan Maret Identifying and handling device tilt in a three-dimensional machine-vision image
KR19980081982A (ko) * 1998-08-11 1998-11-25 양승창 형광등 반사갓
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000173884A (ja) * 1998-12-02 2000-06-23 Canon Inc デバイス製造装置および方法ならびにデバイス製造装置の配線・配管実装方法
US6377332B1 (en) * 1999-02-03 2002-04-23 Nikon Corporation Optical member for photolithography and photolithography apparatus
AU2327800A (en) * 1999-02-12 2000-08-29 Nikon Corporation Exposure method and apparatus
EP1039551B2 (en) 1999-03-23 2010-09-15 Kaneka Corporation Photovoltaic module
TWI242111B (en) * 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP2001021875A (ja) 1999-07-12 2001-01-26 Seiko Epson Corp 液晶装置及びこれを用いた投写型表示装置
KR100625625B1 (ko) 1999-10-07 2006-09-20 가부시키가이샤 니콘 기판, 스테이지 장치, 스테이지 구동 방법, 노광 장치 및노광 방법
JP3679668B2 (ja) 1999-12-20 2005-08-03 キヤノン株式会社 インクジェット記録ヘッドの製造方法
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
JP2001272604A (ja) * 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
US20020014403A1 (en) * 2000-04-07 2002-02-07 Eiichi Hoshino Method of fabricating reflective mask, and methods and apparatus of detecting wet etching end point and inspecting side etching amount
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
AU2001259331A1 (en) 2000-05-03 2001-11-12 Silicon Valley Group Inc Non-contact seal using purge gas
US6488040B1 (en) 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
JP3682914B2 (ja) 2000-07-31 2005-08-17 巌 秋月 データ通信システムおよびこれに用いるデータ処理装置、ブラウザを利用した接続維持方法、記録媒体
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002198286A (ja) * 2000-12-25 2002-07-12 Nikon Corp 露光装置
US6791664B2 (en) * 2001-01-19 2004-09-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufacturing thereby
KR20040007444A (ko) 2001-02-06 2004-01-24 가부시키가이샤 니콘 노광장치 및 노광방법, 그리고 디바이스 제조방법
US7095482B2 (en) * 2001-03-27 2006-08-22 Nikon Corporation Multiple system vibration isolator
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
JP2002333018A (ja) * 2001-05-09 2002-11-22 Canon Inc 流体軸受装置、およびこれを用いた露光装置ならびにデバイス製造方法
US6618205B2 (en) * 2001-05-14 2003-09-09 Pentax Corporation Endoscope objective optical system
JP2002343565A (ja) * 2001-05-18 2002-11-29 Sharp Corp 有機ｌｅｄ表示パネルの製造方法、その方法により製造された有機ｌｅｄ表示パネル、並びに、その方法に用いられるベースフィルム及び基板
US6600547B2 (en) * 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
US20030091767A1 (en) 2001-11-02 2003-05-15 Podhajny Richard M. Anti-microbial packaging materials and methods for making the same
JP2006502558A (ja) 2001-11-07 2006-01-19 アプライド　マテリアルズ　インコーポレイテッド 光学式スポット格子アレイ印刷装置
US20040007589A1 (en) * 2002-02-12 2004-01-15 Lindsay Leveen Device and method for dispensing carbonated beverages
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
KR20050035890A (ko) 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6988327B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
JP3977324B2 (ja) * 2002-11-12 2007-09-19 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
AU2003289271A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
AU2003302831A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
SG171468A1 (en) 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
JP4179283B2 (ja) 2002-12-10 2008-11-12 株式会社ニコン 光学素子及びその光学素子を用いた投影露光装置
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
WO2004053950A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
KR20130010039A (ko) 2002-12-10 2013-01-24 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004053954A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
EP1571695A4 (en) 2002-12-10 2008-10-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE SAME
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
AU2003289272A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
ATE424026T1 (de) 2002-12-13 2009-03-15 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7112727B2 (en) * 2002-12-20 2006-09-26 Peotec Seeds S.R.L. Mutant allele of tomato
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US7090964B2 (en) 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
JP4352930B2 (ja) * 2003-02-26 2009-10-28 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
SG2012087615A (en) * 2003-02-26 2015-08-28 Nippon Kogaku Kk Exposure apparatus, exposure method, and method for producing device
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
TW585291U (en) * 2003-03-25 2004-04-21 Quanta Comp Inc A strap buckle apparatus for a notebook computer
WO2004093159A2 (en) 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
KR101369016B1 (ko) 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
JP4488005B2 (ja) 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
CN101813892B (zh) 2003-04-10 2013-09-25 株式会社尼康 沉浸式光刻装置及使用光刻工艺制造微器件的方法
EP2172809B1 (en) 2003-04-11 2018-11-07 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
SG10201404132YA (en) 2003-04-11 2014-09-26 Nippon Kogaku Kk Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN1307456C (zh) 2003-05-23 2007-03-28 佳能株式会社 投影光学系统、曝光装置及器件的制造方法
JP2004349645A (ja) * 2003-05-26 2004-12-09 Sony Corp 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法
TWI442694B (zh) * 2003-05-30 2014-06-21 Asml Netherlands Bv 微影裝置及元件製造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
DE60308161T2 (de) * 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
JP4515385B2 (ja) 2003-07-09 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
US7528929B2 (en) * 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005054953A2 (en) 2003-11-24 2005-06-16 Carl-Zeiss Smt Ag Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
WO2005059654A1 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Objective as a microlithography projection objective with at least one liquid lens
WO2005059617A2 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Projection objective having a high aperture and a planar end surface
WO2005106589A1 (en) 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102169226B (zh) 2004-01-14 2014-04-23 卡尔蔡司Smt有限责任公司 反射折射投影物镜
KR101295439B1 (ko) 2004-01-16 2013-08-09 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US8852850B2 (en) 2004-02-03 2014-10-07 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101115111B1 (ko) 2004-02-13 2012-04-16 칼 짜이스 에스엠티 게엠베하 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205180A1 (en) * 2004-03-16 2005-09-22 Goudeau Michael C Method and apparatus for three dimensional object covers
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) * 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US20050241694A1 (en) 2004-04-29 2005-11-03 Red Flame Hot Tap Services Ltd. Hot tapping method, system and apparatus
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
KR101213831B1 (ko) 2004-05-17 2012-12-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8605257B2 (en) 2004-06-04 2013-12-10 Carl Zeiss Smt Gmbh Projection system with compensation of intensity variations and compensation element therefor
EP1774405B1 (en) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System for measuring the image quality of an optical imaging system
US8717533B2 (en) * 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
EP2466625A2 (en) 2012-06-20
JP5126190B2 (ja) 2013-01-23
EP2466623B1 (en) 2015-04-22
JP2011023765A (ja) 2011-02-03
KR101875296B1 (ko) 2018-07-05
JP2010028127A (ja) 2010-02-04
KR20180126102A (ko) 2018-11-26
KR20120088846A (ko) 2012-08-08
JP5699977B2 (ja) 2015-04-15
CN102495540A (zh) 2012-06-13
US20140253889A1 (en) 2014-09-11
US8102504B2 (en) 2012-01-24
JP2016075963A (ja) 2016-05-12
JP2012129565A (ja) 2012-07-05
JP2014112716A (ja) 2014-06-19
EP2466621B1 (en) 2015-04-01
EP2466622A2 (en) 2012-06-20
EP2466622B1 (en) 2015-05-27
EP2945016A2 (en) 2015-11-18
HK1214405A1 (zh) 2016-07-22
JP2017068287A (ja) 2017-04-06
US7907253B2 (en) 2011-03-15
KR101288767B1 (ko) 2013-07-23
US20160246188A1 (en) 2016-08-25
TWI468876B (zh) 2015-01-11
SG2012087615A (en) 2015-08-28
US7453550B2 (en) 2008-11-18
KR20130119989A (ko) 2013-11-01
US20070258067A1 (en) 2007-11-08
CN102495540B (zh) 2015-03-18
EP2466625A3 (en) 2012-11-28
EP2466624B1 (en) 2015-04-22
EP1598855B1 (en) 2015-04-22
US20170371253A1 (en) 2017-12-28
US7907254B2 (en) 2011-03-15
KR20110061633A (ko) 2011-06-09
CN104678715A (zh) 2015-06-03
JP2009147386A (ja) 2009-07-02
JP6187614B2 (ja) 2017-08-30
EP3301511A1 (en) 2018-04-04
EP2945184B1 (en) 2017-06-28
TWI591445B (zh) 2017-07-11
JP2018106206A (ja) 2018-07-05
EP2945184A3 (en) 2016-03-23
KR101506408B1 (ko) 2015-03-26
US7268854B2 (en) 2007-09-11
SG10201401559QA (en) 2014-06-27
EP1598855A1 (en) 2005-11-23
EP2466621A2 (en) 2012-06-20
JP5353862B2 (ja) 2013-11-27
US7911583B2 (en) 2011-03-22
US20050280791A1 (en) 2005-12-22
US10180632B2 (en) 2019-01-15
JP6004030B2 (ja) 2016-10-05
KR101169288B1 (ko) 2012-08-02
KR101921572B1 (ko) 2018-11-26
US20070263183A1 (en) 2007-11-15
KR101563453B1 (ko) 2015-10-26
US20070263186A1 (en) 2007-11-15
KR20130019022A (ko) 2013-02-25
EP2466624A2 (en) 2012-06-20
US9348239B2 (en) 2016-05-24
US20070258065A1 (en) 2007-11-08
KR101442361B1 (ko) 2014-09-23
US20190121244A1 (en) 2019-04-25
KR20160089545A (ko) 2016-07-27
HK1247997A1 (zh) 2018-10-05
US7932991B2 (en) 2011-04-26
HK1170070A1 (zh) 2013-02-15
JP2009302596A (ja) 2009-12-24
KR20050102676A (ko) 2005-10-26
US7535550B2 (en) 2009-05-19
EP2466623A2 (en) 2012-06-20
US20060274293A1 (en) 2006-12-07
JP4640516B2 (ja) 2011-03-02
HK1170067A1 (zh) 2013-02-15
KR20120063524A (ko) 2012-06-15
CN104678715B (zh) 2017-05-17
JP2014112741A (ja) 2014-06-19
US20070263185A1 (en) 2007-11-15
EP2945016B1 (en) 2017-09-06
EP2466621A3 (en) 2012-11-21
JP2015121825A (ja) 2015-07-02
US7542128B2 (en) 2009-06-02
JP5807691B2 (ja) 2015-11-10
US20140240684A1 (en) 2014-08-28
US9766555B2 (en) 2017-09-19
EP2945016A3 (en) 2016-03-30
TW201908879A (zh) 2019-03-01
TW201516584A (zh) 2015-05-01
HK1208088A1 (zh) 2016-02-19
HK1170064A1 (zh) 2013-02-15
TWI621923B (zh) 2018-04-21
US20070258066A1 (en) 2007-11-08
KR20170143017A (ko) 2017-12-28
EP2466623A3 (en) 2012-11-21
JP6428800B2 (ja) 2018-11-28
KR20140110089A (ko) 2014-09-16
US9182684B2 (en) 2015-11-10
WO2004086468A1 (ja) 2004-10-07
KR101562447B1 (ko) 2015-10-21
TW201229691A (en) 2012-07-16
TW201719296A (zh) 2017-06-01
JP5807696B2 (ja) 2015-11-10
US20060146306A1 (en) 2006-07-06
TW200500813A (en) 2005-01-01
HK1170066A1 (zh) 2013-02-15
EP1598855A4 (en) 2007-08-22
KR101643112B1 (ko) 2016-07-26
JP5126191B2 (ja) 2013-01-23
TW201220002A (en) 2012-05-16
EP2466622A3 (en) 2012-11-28
HK1168912A1 (zh) 2013-01-11
HK1214372A1 (zh) 2016-07-22
EP2945184A2 (en) 2015-11-18
TWI361957B (zh) 2012-04-11
EP2466624A3 (en) 2012-11-28
KR101381538B1 (ko) 2014-04-04
KR20150052334A (ko) 2015-05-13
US20110032498A1 (en) 2011-02-10
SG183572A1 (en) 2012-09-27
EP2466625B1 (en) 2015-04-22
US8736809B2 (en) 2014-05-27

Similar Documents

Publication Publication Date Title
SG10201809095SA (en) Exposure apparatus, exposure method, and method for producing device
EP1624481A4 (en) EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
HK1151105A1 (en) Exposure apparatus, method for producing device, and method for controlling exposure apparatus
EP1670039A4 (en) EXPOSURE DEVICE AND COMPONENTS MANUFACTURING METHOD
EP2284614A3 (en) Exposure apparatus, exposure method and device producing method
ATE489724T1 (de) Belichtungsvorrichtung und verfahren zur bauelementherstellung
TW200509205A (en) Exposure method and device-manufacturing method
SG150388A1 (en) Exposure apparatus and method for producing device
EP1612850A4 (en) EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE
TW200507064A (en) Exposure apparatus and method for manufacturing device
EP1571701A4 (en) EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
TW200611082A (en) Exposure system and device production method
SG155929A1 (en) Exposure apparatus, exposure method, and method for manufacturing device
SG158744A1 (en) Exposure apparatus and method for producing device
EP1679738A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
JP2005085789A5 (zh)
EP2199859A3 (en) Exposure apparatus, exposure method, and device producing method
ATE490548T1 (de) Belichtungsvorrichtung, belichtungsverfahren und verfahren zur bauelementeherstellung
TW200510964A (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2006093721A5 (zh)