KR20010072570A - 방사의 인터페로메트릭 변조 - Google Patents
방사의 인터페로메트릭 변조 Download PDFInfo
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- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
Claims (48)
- 2개의 벽으로 형성되는 공동(cavity)을 포함하며,상기 2개의 벽은 적어도 2개의 암(arm)에 의해 연결되어 서로에 대하여 운동할 수 있고,상기 2개의 암은 제1 벽의 기계적 응력이 기본적으로 제1 벽의 평면 내의 제1 벽의 운동에 의해 완화될 수 있도록 하는 방법으로 형성되는인터페로메트릭 변조기(interferometric modulator).
- 제1항에 있어서,제1 벽의 운동이 회전 운동인 변조기.
- 제1항에 있어서,상기 암 각각은 2개의 단부(ends)를 가지며,상기 단부 중 제1 단부는 제1 벽 및 제2 단부에 부착되고,상기 제2 단부는 제2 벽에 대하여 고정된 위치에 부착되며,상기 제2 단부의 부착 지점은 제1 벽과 수직인 축을 기준으로 제2 벽에 부착되는 단부로부터 오프셋되는변조기.
- 제1항에 있어서,상기 암이 원하는 스프링 정수를 구현하도록 이루어지는 변조기.
- 제4항에 있어서,상기 암의 길이가 원하는 스프링 정수를 구현하도록 이루어지는 변조기.
- 제4항에 있어서,상기 암의 두께가 원하는 스프링 정수를 구현하도록 이루어지는 변조기.
- 제4항에 있어서,제1 벽의 에지를 따라 상기 암이 부착되는 위치가 원하는 스프링 정수를 구현하도록 선택되는 변조기.
- 제1항에 있어서,상기 제1 벽은 2개의 기본적으로 직선형인 에지를 가지며,상기 암 각각의 제1 단부는 제1 에지의 중앙에 부착되는변조기.
- 제1항에 있어서,상기 제1 벽이 2개의 기본적으로 직선형인 에지를 가지며,상기 암 각각의 단부는 상기 제1 에지의 단부에 부착되는변조기.
- 제9항에 있어서,상기 2개의 벽을 연결하는 제3 암을 포함하는 변조기.
- 제1항에 있어서,상기 2개의 벽을 각각 연결하는 제3 암 및 제4 암을 포함하는 변조기.
- 제10항 또는 제11항에 있어서,상기 암이 핀기어 구성(pinwheel configuration)을 형성하는 변조기.
- 인터페로메트릭 변조기 각각이 2개의 벽으로 형성되는 공동을 포함하며,상기 벽은 적어도 2개의 암에 의해 연결되어 서로에 대하여 운동할 수 있고,서로 다른 변조기의 벽 및 암이 서로에 대한 벽의 이동과 연관되어 서로 다른 스프링 정수를 구현하도록 이루어지는인터페로메트릭 변조기 어레이.
- 제13항에 있어서,암 각각은 2개의 단부를 가지며,상기 단부 중 제1 단부는 제1 벽 및 제2 단부에 부착되고,상기 제2 단부는 제2 벽에 대하여 고정된 위치에 부착되며,상기 제2 단부의 부착 지점은 제1 벽과 수직인 축을 기준으로 제2 벽에 부착된 단부로부터 오프셋되는변조기 어레이.
- 적어도 2개의 암으로 연결되는, 공동의 2개의 벽을 형성하는 단계; 및제1 벽의 기계적 응력을 완화시키기 위해 제1 벽이 제1 벽의 평면 내에서 암을 기준으로 회전하는 것을 허용하는 단계를 포함하는 인터페로메트릭 변조기의 제조 방법.
- 일반적으로 서로 평행인 3개의 벽; 및적어도 하나의 벽을 변조기의 3개의 개별 동작 상태를 표시하는 개별 위치로 구동하는 제어 회로을 포함하며,상기 벽은 적어도 하나의 벽이 다른 2개의 벽에 대하여 이동하도록 지지되는인터페로메트릭 변조기의 제조 방법.
- 제16항에 있어서,3개의 개별 상태 중 제1 상태인 경우, 제1 벽과 제2 벽 사이 및 제2 벽과제3 벽 사이에 갭이 존재하며,3개의 개별 상태 중 제2 상태인 경우, 제1 벽과 제2 벽 사이에는 갭이 존재하며 제2 벽과 제3 벽의 사이에는 갭이 존재하지 않으며,3개의 개별 상태 중 제3 상태인 경우, 제1 벽과 제2 벽 사이 및 제2 벽과 제3 벽 사이에 갭이 존재하지 않는인터페로메트릭 변조기의 제조 방법.
- 제16항에 있어서,막 각각이 유전체, 금속 또는 반도체 막으로 이루어지는 인터페로메트릭 변조기의 제조 방법.
- 서로에 대하여 접촉 위치로부터 접촉 위치로 이동할 수 있는 2개의 벽으로 형성되며, 상기 2개의 벽이 서로에 대하여 기본적으로 인접하여 위치하는 공동; 및상기 2개의 벽이 접촉 위치에서 닿는 표면 면적을 감소시키기 위해 제1 벽의 일부를 형성하도록 장착되는 스페이서(spacer)를 포함하는 인터페로메트릭 변조기.
- 제19항에 있어서,상기 스페이서가 전극을 포함하며,전극에 전류를 공급하기 위한 도체를 추가로 포함하는변조기.
- 액체로 채워진 갭에 의해 분리되는 2개의 벽으로 형성되는 공동; 및제1 벽 내에 위치하며, 갭의 용적이 변경됨에 따라 갭으로 또는 갭으로부터 이동하는 액체의 댐핑 효과(damping effect)를 제어하도록 구성되는 개구부를 포함하며,상기 2개의 벽은 갭의 용적을 변경하기 위해 서로에 대하여 운동할 수 있는변조기.
- 제21항에 있어서,상기 개구부가 벽 중앙의 둥근 구멍을 포함하는 변조기.
- 공동을 형성하는 적어도 2개의 벽을 포함하며,상기 벽은 서로에 대하여 운동가능하며,벽의 상대적 위치는 두 가지 모드를 형성하며,상기 두 가지 모드 중에서 제1 모드에서는, 변조기가 입사 광을 반사하고 백색을 나타내고,상기 두 가지 모드 중에서 제2 모드에서는, 변조기가 입사 광을 흡수하고 흑색을 나타내는인터페로메트릭 변조기.
- 제23항에 있어서,상기 제1 벽은 금속 사이에 끼워진 유전체를 포함하며,다른 벽은 유전체를 포함하는변조기.
- 2개의 벽으로 형성되는 공동을 포함하며,상기 벽은 적어도 2개의 암에 의해 연결되어 서로에 대하여 운동할 수 있고,그 응답 시간이 암의 길이, 암이 벽에 연결되는 위치, 제1 벽의 두께, 암의 두께, 댐핑 홀의 존재와 크기 및 변조기 부근의 주위 가스 압력 중에서 적어도 2개의 조합에 의해 미리 결정되는 값으로 제어되는인터페로메트릭 변조기.
- 2개의 벽으로 형성되는 공동; 및레일이 작동하거나 또는 교류 전극 구동 전압이 인가되는 것 중에서 적어도 하나를 포함하는 전하 증착 완화 장치(charge deposition mitigating device)를 포함하고상기 벽은 적어도 2개의 암에 의해 연결되어 서로에 대하여 운동할 수 있는인터페로메트릭 변조기.
- 지지대(supports)에 의해 유지되는 적어도 2개의 벽으로 각각 형성되는 하나 이상의 공동을 포함하며,상기 적어도 하나의 벽 또는 지지대는 벽 또는 지지대의 전기적, 기계적 또는 광학적 특성이 벽 또는 지지대 단면의 서로 다른 위치에서 서로 다르도록 적어도 2개의 재료를 포함하는인터페로메트릭 변조기.
- 제23항에 있어서,적어도 하나의 벽이 둘 이상의 개별적인 재료의 적층물(laminate)을 포함하는 변조기.
- 제27항에 있어서,상기 벽 중에서 적어도 하나의 벽이 둘 이상의 재료의 겹판물(gradient)을 포함하는 변조기.
- 제27항에 있어서,상기 지지대가 둘 이상의 개별적인 재료의 적층물을 포함하는 변조기.
- 제27항에 있어서,상기 지지대가 둘 이상의 재료의 겹판물을 포함하는 변조기.
- 제27항에 있어서,상기 2개의 재료가 각각 서로 다르며 상보적인 전기적, 기계적 또는 광학적 특성을 나타내는 변조기.
- 가스상 에칭액을 사용하여 증착된 새크리피셜층을 제거하는 단계를 포함하는 마이크로전자기계적 구조를 제조하는 경우에 사용되는 방법.
- 제33항에 있어서,상기 마이크로전자기계적 구조가 놓이는 기판이 가스상 에칭액의 효과에 대하여 대체로 면역성이 있는 방법.
- 제33항에 있어서,상기 기판이 불활성 막 도포에 의해 마이크로전자기계적 구조로부터 화학적으로 분리되는 방법.
- 제33항에 있어서,상기 MEMS가 간섭 변조기(interference modulator)를 포함하며,상기 변조기의 벽이 기판 상에 형성되며,플라즈마, 액체 또는 가스 상 에칭액이 벽과 기판 사이에 형성된 새크리피셜층을 제거하는방법.
- 제36항에 있어서,상기 가스상 에칭액이 XeF2, BrF3, ClF3, BrF5 및 IF5 중에서 하나를 포함하는 방법.
- 제33항에 있어서,상기 사용된 새크리피셜층이 실리콘, 몰리브덴 및 텅스텐, 탄탈 또는 게르마늄을 포함하는 방법.
- 적어도 크기가 8" ×8"이거나 직경이 8"인 유리 또는 플라스틱 기판의 표면 상의 전자기계적 구조(electromechanical structure)를 마이크로머시닝(micromachining)하는 단계를 포함하는 마이크로전자기계적 구조 어레이를 생산 라인에서 제조하는 방법.
- 제39항에 있어서,전자회로가 MEM과 결합하여 제조되는 방법.
- 제39항에 있어서,상기 마이크로전자기계적 구조가 간섭 변조기를 포함하는 방법.
- 제39항에 있어서,전자회로를 형성하는 단계가 상기 구조를 마이크로머시닝하는 단계와 중첩되는 방법.
- 제39항에 있어서,상기 전자회로를 형성하는 단계가 상기 구조를 마이크로머시닝하는 단계와 중첩되지 않는 방법.
- 단일 마스킹 단계에서 상기 새크리피셜층 및 1차 동작 전극(actuating electrode)을 패턴화하고 에칭하는 MEM 구조의 제조 방법.
- 절연층을 덜 에칭함으로써 1차 동작 전극 및 2차 동작 전극을 절연하는 MEM 구조의 제조 방법.
- 새크리피셜층은 단일 단계에서 패턴화되고 에칭되며,절연층 및 1차 동작 전극은 개별적인 단계에서 패턴화되고 에칭되는표면 마이크로머시닝된 MEM 구조의 제조 방법.
- 단일 마스킹 단계에서 새크리피셜층, 절연층 및 1차 동작 전극을 패턴화하고 에칭하는 표면 마이크로머시닝된 MEM 구조의 제조 방법.
- 절연층을 덜 에칭함으로써, 1차 동작 전극 및 2차 동작 전극을 전기적으로 절연하는 MEM 구조의 제조 방법.
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-
1999
- 1999-04-01 KR KR1020007011227A patent/KR100703140B1/ko not_active IP Right Cessation
- 1999-04-01 WO PCT/US1999/007271 patent/WO1999052006A2/en active IP Right Grant
- 1999-04-07 TW TW89113021A patent/TW504583B/zh not_active IP Right Cessation
-
2006
- 2006-07-24 US US11/492,535 patent/US7554711B2/en not_active Expired - Fee Related
- 2006-09-08 US US11/517,721 patent/US7301704B2/en not_active Expired - Fee Related
- 2006-11-02 US US11/591,928 patent/US7511875B2/en not_active Expired - Fee Related
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2007
- 2007-01-26 US US11/698,721 patent/US7872792B2/en not_active Expired - Fee Related
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2009
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2011
- 2011-01-13 US US13/005,926 patent/US9110289B2/en not_active Expired - Fee Related
- 2011-01-13 US US13/005,934 patent/US20110170167A1/en not_active Abandoned
- 2011-12-21 US US13/333,208 patent/US20120099174A1/en not_active Abandoned
- 2011-12-21 US US13/333,257 patent/US20120085731A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101236429B1 (ko) * | 2004-09-27 | 2013-02-22 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 광 미소 기전 시스템 및 구조 |
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TW504583B (en) | 2002-10-01 |
US20070008607A1 (en) | 2007-01-11 |
US9110289B2 (en) | 2015-08-18 |
US7791787B2 (en) | 2010-09-07 |
US7872792B2 (en) | 2011-01-18 |
US20120085731A1 (en) | 2012-04-12 |
US20120099174A1 (en) | 2012-04-26 |
US20090135463A1 (en) | 2009-05-28 |
US20060262380A1 (en) | 2006-11-23 |
US20110170167A1 (en) | 2011-07-14 |
KR100703140B1 (ko) | 2007-04-05 |
US20110170166A1 (en) | 2011-07-14 |
WO1999052006A2 (en) | 1999-10-14 |
US7554711B2 (en) | 2009-06-30 |
WO1999052006A3 (en) | 1999-12-29 |
US7301704B2 (en) | 2007-11-27 |
US20070177247A1 (en) | 2007-08-02 |
US7511875B2 (en) | 2009-03-31 |
US20070139758A1 (en) | 2007-06-21 |
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