KR102276768B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102276768B1
KR102276768B1 KR1020207036773A KR20207036773A KR102276768B1 KR 102276768 B1 KR102276768 B1 KR 102276768B1 KR 1020207036773 A KR1020207036773 A KR 1020207036773A KR 20207036773 A KR20207036773 A KR 20207036773A KR 102276768 B1 KR102276768 B1 KR 102276768B1
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South Korea
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film
metal oxide
oxide semiconductor
semiconductor film
transistor
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KR20200144595A (ko
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순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L27/1225—
    • H01L29/4908—
    • H01L29/78603—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020207036773A 2010-04-02 2011-03-11 반도체 장치 Active KR102276768B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217021132A KR102357169B1 (ko) 2010-04-02 2011-03-11 반도체 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010086407 2010-04-02
JPJP-P-2010-086407 2010-04-02
PCT/JP2011/056493 WO2011122364A1 (en) 2010-04-02 2011-03-11 Semiconductor device
KR1020207019908A KR102196259B1 (ko) 2010-04-02 2011-03-11 반도체 장치

Related Parent Applications (1)

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KR1020207019908A Division KR102196259B1 (ko) 2010-04-02 2011-03-11 반도체 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217021132A Division KR102357169B1 (ko) 2010-04-02 2011-03-11 반도체 장치

Publications (2)

Publication Number Publication Date
KR20200144595A KR20200144595A (ko) 2020-12-29
KR102276768B1 true KR102276768B1 (ko) 2021-07-13

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KR1020207036773A Active KR102276768B1 (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020217021132A Active KR102357169B1 (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020187032197A Ceased KR20180122756A (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020207001495A Active KR102134294B1 (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020127027963A Ceased KR20130032304A (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020137011342A Active KR101391964B1 (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020207019908A Active KR102196259B1 (ko) 2010-04-02 2011-03-11 반도체 장치

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KR1020187032197A Ceased KR20180122756A (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020207001495A Active KR102134294B1 (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020127027963A Ceased KR20130032304A (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020137011342A Active KR101391964B1 (ko) 2010-04-02 2011-03-11 반도체 장치
KR1020207019908A Active KR102196259B1 (ko) 2010-04-02 2011-03-11 반도체 장치

Country Status (6)

Country Link
US (7) US8502221B2 (https=)
JP (11) JP5450498B2 (https=)
KR (7) KR102276768B1 (https=)
CN (3) CN102834922B (https=)
TW (5) TWI517388B (https=)
WO (1) WO2011122364A1 (https=)

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* Cited by examiner, † Cited by third party
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KR101921047B1 (ko) 2010-03-26 2018-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
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