KR101722409B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101722409B1
KR101722409B1 KR1020167017108A KR20167017108A KR101722409B1 KR 101722409 B1 KR101722409 B1 KR 101722409B1 KR 1020167017108 A KR1020167017108 A KR 1020167017108A KR 20167017108 A KR20167017108 A KR 20167017108A KR 101722409 B1 KR101722409 B1 KR 101722409B1
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South Korea
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oxide semiconductor
layer
electrode
semiconductor layer
wiring
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Korean (ko)
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KR20160078522A (ko
Inventor
？페이 야마자키
겐고 아키모토
시게키 코모리
히데키 우오치
토모야 후타무라
타카히로 카사하라
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H01L27/1214—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H01L27/0266—
    • H01L27/1225—
    • H01L27/124—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Shift Register Type Memory (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020167017108A 2008-09-19 2009-08-31 반도체 장치 Active KR101722409B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008241743 2008-09-19
JPJP-P-2008-241743 2008-09-19
PCT/JP2009/065542 WO2010032638A1 (en) 2008-09-19 2009-08-31 Display device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117008838A Division KR101636755B1 (ko) 2008-09-19 2009-08-31 표시 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177008269A Division KR101762112B1 (ko) 2008-09-19 2009-08-31 액정표시장치

Publications (2)

Publication Number Publication Date
KR20160078522A KR20160078522A (ko) 2016-07-04
KR101722409B1 true KR101722409B1 (ko) 2017-04-03

Family

ID=42036716

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020167017108A Active KR101722409B1 (ko) 2008-09-19 2009-08-31 반도체 장치
KR1020177008269A Active KR101762112B1 (ko) 2008-09-19 2009-08-31 액정표시장치
KR1020117008838A Active KR101636755B1 (ko) 2008-09-19 2009-08-31 표시 장치
KR1020177020189A Active KR101803264B1 (ko) 2008-09-19 2009-08-31 반도체 장치
KR1020127008109A Active KR101408715B1 (ko) 2008-09-19 2009-08-31 표시 장치

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020177008269A Active KR101762112B1 (ko) 2008-09-19 2009-08-31 액정표시장치
KR1020117008838A Active KR101636755B1 (ko) 2008-09-19 2009-08-31 표시 장치
KR1020177020189A Active KR101803264B1 (ko) 2008-09-19 2009-08-31 반도체 장치
KR1020127008109A Active KR101408715B1 (ko) 2008-09-19 2009-08-31 표시 장치

Country Status (7)

Country Link
US (6) US9048320B2 (enExample)
EP (1) EP2327070B1 (enExample)
JP (10) JP5436108B2 (enExample)
KR (5) KR101722409B1 (enExample)
CN (1) CN102160102B (enExample)
TW (1) TWI550806B (enExample)
WO (1) WO2010032638A1 (enExample)

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CN102160103B (zh) 2008-09-19 2013-09-11 株式会社半导体能源研究所 显示装置
KR101761108B1 (ko) 2008-10-03 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
JP2010153802A (ja) * 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2010205987A (ja) * 2009-03-04 2010-09-16 Sony Corp 薄膜トランジスタおよびその製造方法並びに表示装置
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
KR101835748B1 (ko) * 2009-10-09 2018-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
KR101520024B1 (ko) * 2009-11-28 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011132351A1 (ja) * 2010-04-21 2011-10-27 シャープ株式会社 半導体素子、半導体素子の製造方法、アクティブマトリクス基板及び表示装置
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US8519387B2 (en) * 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
TWI405335B (zh) * 2010-09-13 2013-08-11 Au Optronics Corp 半導體結構及其製造方法
EP2624326A4 (en) * 2010-09-29 2017-05-10 Posco Method for manufacturing a flexible electronic device using a roll-shaped motherboard, flexible electronic device, and flexible substrate
TWI431388B (zh) 2010-12-15 2014-03-21 E Ink Holdings Inc 顯示裝置結構、電泳顯示器之顯示面板結構，以及顯示裝置製造方法
US8841664B2 (en) * 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI613822B (zh) 2011-09-29 2018-02-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN102683276B (zh) * 2012-03-02 2015-03-11 京东方科技集团股份有限公司 一种像素驱动电路及其制备方法、阵列基板
JP2014027263A (ja) 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR20140031671A (ko) 2012-09-05 2014-03-13 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
CN102891183B (zh) * 2012-10-25 2015-09-30 深圳市华星光电技术有限公司 薄膜晶体管及主动矩阵式平面显示装置
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
TWI703723B (zh) 2012-11-28 2020-09-01 日商半導體能源研究所股份有限公司 顯示裝置
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
CN104885230B (zh) 2012-12-25 2018-02-23 株式会社半导体能源研究所 半导体装置
CN103199513B (zh) * 2013-02-22 2016-04-06 合肥京东方光电科技有限公司 静电保护电路、显示装置和静电保护方法
TWI611566B (zh) * 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
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TWI649606B (zh) 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
CN103995407B (zh) * 2014-05-08 2016-08-24 京东方科技集团股份有限公司 阵列基板和显示面板
CN106462015B (zh) * 2014-06-17 2019-05-28 三菱电机株式会社 液晶显示装置及其制造方法
WO2016063169A1 (en) 2014-10-23 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
KR102661474B1 (ko) * 2016-04-11 2024-04-29 삼성디스플레이 주식회사 디스플레이 장치
KR102514412B1 (ko) * 2016-05-02 2023-03-28 삼성디스플레이 주식회사 반도체소자 및 이를 채용하는 표시장치
US10685983B2 (en) 2016-11-11 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
WO2018167591A1 (ja) * 2017-03-13 2018-09-20 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR102517092B1 (ko) * 2017-08-02 2023-04-04 삼성전자주식회사 가요성 디스플레이 패널을 포함하는 전자 장치
CN109903690B (zh) * 2018-09-06 2021-04-09 友达光电股份有限公司 传感显示设备
CN109713076B (zh) * 2019-02-21 2024-11-19 京东方科技集团股份有限公司 平板探测基板及其制备方法、平坦探测器
CN110010626B (zh) * 2019-04-11 2022-04-29 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
KR102765871B1 (ko) * 2020-07-17 2025-02-12 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102835341B1 (ko) * 2020-07-29 2025-07-17 삼성전자주식회사 디스플레이 모듈
JP7621859B2 (ja) * 2021-03-29 2025-01-27 株式会社ジャパンディスプレイ 表示装置

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JP2007096055A (ja) 2005-09-29 2007-04-12 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

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