JP5436108B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP5436108B2 JP5436108B2 JP2009209019A JP2009209019A JP5436108B2 JP 5436108 B2 JP5436108 B2 JP 5436108B2 JP 2009209019 A JP2009209019 A JP 2009209019A JP 2009209019 A JP2009209019 A JP 2009209019A JP 5436108 B2 JP5436108 B2 JP 5436108B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- layer
- wiring
- thin film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 271
- 239000000758 substrate Substances 0.000 claims description 88
- 230000015572 biosynthetic process Effects 0.000 claims description 44
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 376
- 239000010408 film Substances 0.000 description 210
- 239000010409 thin film Substances 0.000 description 194
- 238000000034 method Methods 0.000 description 55
- 239000004973 liquid crystal related substance Substances 0.000 description 39
- 230000001681 protective effect Effects 0.000 description 38
- 239000011241 protective layer Substances 0.000 description 35
- 238000005530 etching Methods 0.000 description 32
- 239000000463 material Substances 0.000 description 30
- 230000006870 function Effects 0.000 description 26
- 229910052760 oxygen Inorganic materials 0.000 description 26
- 239000001301 oxygen Substances 0.000 description 24
- 239000000123 paper Substances 0.000 description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000012298 atmosphere Substances 0.000 description 16
- 239000003990 capacitor Substances 0.000 description 16
- 238000005401 electroluminescence Methods 0.000 description 16
- 238000009832 plasma treatment Methods 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 13
- 239000011701 zinc Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 239000000565 sealant Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000003094 microcapsule Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000001771 impaired effect Effects 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000012798 spherical particle Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920006267 polyester film Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010052128 Glare Diseases 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002872 contrast media Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000838 magnetophoresis Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Description
本形態は、画素部とその周辺に非線形素子を含む保護回路が形成された表示装置の一態様を図面を参照して説明する。
本形態は、実施の形態1において図4(A)に示した保護回路の作製工程の一様態を図8及び図9を参照して説明する。図8及び図9は図4(A)中のQ1−Q2切断線に対応した断面図を表している。
本形態は、画素部とその周辺に非線形素子を含む保護回路が形成された表示装置の実施の形態2とは異なる一様態を、図27を参照して説明する。
本実施の形態では、本発明の一態様を適用した表示装置として、保護回路と画素部に配置するTFTを同一基板上に有する電子ペーパーの例を示す。
本実施の形態では、本発明の一態様の半導体装置の一例である表示装置において、同一基板上に少なくとも保護回路と、駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について図11乃至図16を用いて以下に説明する。
本発明の一態様の非線形素子と共に薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、本発明の一態様の非線形素子と薄膜トランジスタを駆動回路の一部または全体に用い、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本発明の一態様の非線形素子と共に薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。
本発明の一態様の表示装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図22、図23に示す。
本発明の一態様に係る半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラなどのカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
11 端子
12 端子
13 走査線
14 信号線
16 ゲート電極
17 画素部
18 画素
19 画素トランジスタ
20 保持容量部
21 画素電極
22 容量線
23 共通端子
24 保護回路
25 保護回路
26 保護回路
27 容量バス線
28 共通配線
29 共通配線
30 非線形素子
30a 非線形素子
30b 非線形素子
31 非線形素子
31a 非線形素子
31b 非線形素子
38 配線層
39 配線層
100 基板
101 ゲート電極
102 ゲート絶縁層
103 酸化物半導体層
104a 酸化物半導体層
104b 酸化物半導体層
105a 導電層
105b 導電層
107 保護絶縁膜
108 走査線
110 配線層
111 酸化物半導体層
125 コンタクトホール
128 コンタクトホール
131 レジストマスク
132 導電膜
133 チャネル保護層
135 絶縁層
136 絶縁層
170a 非線形素子
170b 非線形素子
270a 非線形素子
580 基板
581 薄膜トランジスタ
583 絶縁層
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
730a 非線形素子
730b 非線形素子
730c 非線形素子
740a 非線形素子
740b 非線形素子
740c 非線形素子
740d 非線形素子
1000 携帯電話機
1001 筐体
1002 表示部
1003 操作ボタン
1004 外部接続ポート
1005 スピーカ
1006 マイク
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2631 ポスター
2632 車内広告
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4501 基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4519 異方性導電膜
4520 隔壁
5300 基板
5301 画素部
5302 走査線駆動回路
5303 信号線駆動回路
5400 基板
5401 画素部
5402 走査線駆動回路
5403 信号線駆動回路
5404 走査線駆動回路
5501 配線
5502 配線
5503 配線
5504 配線
5505 配線
5506 配線
5543 ノード
5544 ノード
5571 薄膜トランジスタ
5572 薄膜トランジスタ
5573 薄膜トランジスタ
5574 薄膜トランジスタ
5575 薄膜トランジスタ
5576 薄膜トランジスタ
5577 薄膜トランジスタ
5578 薄膜トランジスタ
5601 ドライバIC
5602 スイッチ群
5603a 薄膜トランジスタ
5603b 薄膜トランジスタ
5603c 薄膜トランジスタ
5611 配線
5612 配線
5613 配線
5621 配線
5701 フリップフロップ
5703a タイミング
5703b タイミング
5703c タイミング
5711 配線
5712 配線
5713 配線
5714 配線
5715 配線
5716 配線
5717 配線
5721 信号
5803a タイミング
5803b タイミング
5803c タイミング
5821 信号
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 TFT
7002 発光素子
7003 陰極
7004 発光層
7005 陽極
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 発光層
7015 陽極
7016 遮蔽膜
7017 導電膜
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 発光層
7025 陽極
7027 導電膜
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (2)
- 基板上方の第1の導電層と、
前記基板上方の第2の導電層と、
前記基板上方の第3の導電層と、
前記第1の導電層上方、前記第2の導電層上方及び前記第3の導電層上方の第1の絶縁層と、
前記第1の絶縁層上方の第1の酸化物半導体と、
前記第1の絶縁層上方の第2の酸化物半導体と、
前記第1の絶縁層上方の第3の酸化物半導体と、
前記第1の酸化物半導体上方の第4の導電層と、
前記第1の酸化物半導体上方の第5の導電層と、
前記第2の酸化物半導体上方の第6の導電層と、
前記第2の酸化物半導体上方の第7の導電層と、
前記第3の酸化物半導体上方の第8の導電層と、
前記第3の酸化物半導体上方の第9の導電層と、
第1の配線と、
第2の配線と、を有し、
前記第1の導電層は、第1のトランジスタの第1のゲート電極として機能する領域を有し、
前記第2の導電層は、第2のトランジスタの第2のゲート電極として機能する領域を有し、
前記第3の導電層は、第3のトランジスタの第3のゲート電極として機能する領域を有し、
前記第1の酸化物半導体は、前記第1のトランジスタのチャネル形成領域を有し、
前記第2の酸化物半導体は、前記第2のトランジスタのチャネル形成領域を有し、
前記第3の酸化物半導体は、前記第3のトランジスタのチャネル形成領域を有し、
前記第4の導電層は、前記第1のトランジスタの第1のソース電極として機能する領域を有し、
前記第5の導電層は、前記第1のトランジスタの第1のドレイン電極として機能する領域を有し、
前記第6の導電層は、前記第2のトランジスタの第2のソース電極として機能する領域を有し、
前記第7の導電層は、前記第2のトランジスタの第2のドレイン電極として機能する領域を有し、
前記第8の導電層は、前記第3のトランジスタの第3のソース電極として機能する領域を有し、
前記第9の導電層は、前記第3のトランジスタの第3のドレイン電極として機能する領域を有し、
前記第4の導電層は、前記第1の酸化物半導体と接する領域を有し、
前記第5の導電層は、前記第1の酸化物半導体と接する領域を有し、
前記第6の導電層は、前記第2の酸化物半導体と接する領域を有し、
前記第7の導電層は、前記第2の酸化物半導体と接する領域を有し、
前記第8の導電層は、前記第3の酸化物半導体と接する領域を有し、
前記第9の導電層は、前記第3の酸化物半導体と接する領域を有し、
前記第1のトランジスタの前記第1のソース電極又は前記第1のドレイン電極の一方は、透光性を有する第10の導電層を介して、前記第1の配線と電気的に接続され、
前記第1のトランジスタの前記第1のゲート電極は、前記第1の配線と電気的に接続され、
前記第2のトランジスタの前記第2のソース電極又は前記第2のドレイン電極の一方は、前記第2の配線と電気的に接続され、
前記第2のトランジスタの前記第2のゲート電極は、透光性を有する第11の導電層を介して、前記第2の配線と電気的に接続され、
前記第2のトランジスタの前記第2のソース電極又は前記第2のドレイン電極の他方は、前記第1のトランジスタの前記第1のソース電極又は前記第1のドレイン電極の他方と電気的に接続され、
前記第3のトランジスタの前記第3のソース電極又は前記第3のドレイン電極の一方は、前記第1のトランジスタの前記第1のソース電極又は前記第1のドレイン電極の一方と電気的に接続され、
前記第3のトランジスタの前記第3のソース電極又は前記第3のドレイン電極の他方は、前記第2のトランジスタの前記第2のソース電極又は前記第2のドレイン電極の一方と電気的に接続されることを特徴とする表示装置。 - 請求項1において、
前記第1乃至第3の酸化物半導体のそれぞれは、In、Ga及びZnを含むことを特徴とする表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009209019A JP5436108B2 (ja) | 2008-09-19 | 2009-09-10 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008241743 | 2008-09-19 | ||
JP2008241743 | 2008-09-19 | ||
JP2009209019A JP5436108B2 (ja) | 2008-09-19 | 2009-09-10 | 表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013254782A Division JP5781584B2 (ja) | 2008-09-19 | 2013-12-10 | 液晶表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010097203A JP2010097203A (ja) | 2010-04-30 |
JP2010097203A5 JP2010097203A5 (ja) | 2012-10-11 |
JP5436108B2 true JP5436108B2 (ja) | 2014-03-05 |
Family
ID=42036716
Family Applications (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009209019A Active JP5436108B2 (ja) | 2008-09-19 | 2009-09-10 | 表示装置 |
JP2013254782A Active JP5781584B2 (ja) | 2008-09-19 | 2013-12-10 | 液晶表示装置 |
JP2015141028A Withdrawn JP2015232720A (ja) | 2008-09-19 | 2015-07-15 | 表示装置及び表示モジュール |
JP2017113070A Active JP6423046B2 (ja) | 2008-09-19 | 2017-06-08 | 半導体装置 |
JP2018195490A Active JP6676723B2 (ja) | 2008-09-19 | 2018-10-17 | 半導体装置 |
JP2020042758A Active JP6856795B2 (ja) | 2008-09-19 | 2020-03-12 | 半導体装置及び表示装置 |
JP2021044408A Active JP7167221B2 (ja) | 2008-09-19 | 2021-03-18 | 液晶表示装置 |
JP2022171311A Withdrawn JP2023017819A (ja) | 2008-09-19 | 2022-10-26 | 表示装置 |
JP2023210862A Pending JP2024041759A (ja) | 2008-09-19 | 2023-12-14 | 半導体装置及び表示装置 |
Family Applications After (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013254782A Active JP5781584B2 (ja) | 2008-09-19 | 2013-12-10 | 液晶表示装置 |
JP2015141028A Withdrawn JP2015232720A (ja) | 2008-09-19 | 2015-07-15 | 表示装置及び表示モジュール |
JP2017113070A Active JP6423046B2 (ja) | 2008-09-19 | 2017-06-08 | 半導体装置 |
JP2018195490A Active JP6676723B2 (ja) | 2008-09-19 | 2018-10-17 | 半導体装置 |
JP2020042758A Active JP6856795B2 (ja) | 2008-09-19 | 2020-03-12 | 半導体装置及び表示装置 |
JP2021044408A Active JP7167221B2 (ja) | 2008-09-19 | 2021-03-18 | 液晶表示装置 |
JP2022171311A Withdrawn JP2023017819A (ja) | 2008-09-19 | 2022-10-26 | 表示装置 |
JP2023210862A Pending JP2024041759A (ja) | 2008-09-19 | 2023-12-14 | 半導体装置及び表示装置 |
Country Status (7)
Country | Link |
---|---|
US (5) | US9048320B2 (ja) |
EP (1) | EP2327070B1 (ja) |
JP (9) | JP5436108B2 (ja) |
KR (5) | KR101803264B1 (ja) |
CN (1) | CN102160102B (ja) |
TW (1) | TWI550806B (ja) |
WO (1) | WO2010032638A1 (ja) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102881696A (zh) | 2008-09-19 | 2013-01-16 | 株式会社半导体能源研究所 | 显示装置 |
KR101652693B1 (ko) | 2008-10-03 | 2016-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
EP2172804B1 (en) | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
CN101719493B (zh) | 2008-10-08 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置 |
JP2010153802A (ja) | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
US8441007B2 (en) | 2008-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US8114720B2 (en) | 2008-12-25 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2010205987A (ja) * | 2009-03-04 | 2010-09-16 | Sony Corp | 薄膜トランジスタおよびその製造方法並びに表示装置 |
EP2284891B1 (en) | 2009-08-07 | 2019-07-24 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
KR101835748B1 (ko) * | 2009-10-09 | 2018-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 표시 장치 및 이를 포함한 전자 기기 |
KR101803553B1 (ko) * | 2009-11-28 | 2017-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
WO2011132351A1 (ja) * | 2010-04-21 | 2011-10-27 | シャープ株式会社 | 半導体素子、半導体素子の製造方法、アクティブマトリクス基板及び表示装置 |
WO2011145634A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
EP2587472B1 (en) * | 2010-06-24 | 2020-11-11 | Sharp Kabushiki Kaisha | Semiconductor device and process for production thereof |
US8519387B2 (en) * | 2010-07-26 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing |
JP5846789B2 (ja) | 2010-07-29 | 2016-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI405335B (zh) * | 2010-09-13 | 2013-08-11 | Au Optronics Corp | 半導體結構及其製造方法 |
US20130188324A1 (en) * | 2010-09-29 | 2013-07-25 | Posco | Method for Manufacturing a Flexible Electronic Device Using a Roll-Shaped Motherboard, Flexible Electronic Device, and Flexible Substrate |
TWI431388B (zh) | 2010-12-15 | 2014-03-21 | E Ink Holdings Inc | 顯示裝置結構、電泳顯示器之顯示面板結構,以及顯示裝置製造方法 |
US8841664B2 (en) * | 2011-03-04 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI605590B (zh) | 2011-09-29 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
CN102683276B (zh) | 2012-03-02 | 2015-03-11 | 京东方科技集团股份有限公司 | 一种像素驱动电路及其制备方法、阵列基板 |
KR102113160B1 (ko) * | 2012-06-15 | 2020-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20140031671A (ko) | 2012-09-05 | 2014-03-13 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
CN102891183B (zh) * | 2012-10-25 | 2015-09-30 | 深圳市华星光电技术有限公司 | 薄膜晶体管及主动矩阵式平面显示装置 |
TWI627483B (zh) | 2012-11-28 | 2018-06-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電視接收機 |
TWI757837B (zh) | 2012-11-28 | 2022-03-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
KR102241249B1 (ko) | 2012-12-25 | 2021-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저항 소자, 표시 장치, 및 전자기기 |
KR20220145922A (ko) | 2012-12-25 | 2022-10-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN103199513B (zh) * | 2013-02-22 | 2016-04-06 | 合肥京东方光电科技有限公司 | 静电保护电路、显示装置和静电保护方法 |
TWI611566B (zh) | 2013-02-25 | 2018-01-11 | 半導體能源研究所股份有限公司 | 顯示裝置和電子裝置 |
US9915848B2 (en) | 2013-04-19 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US9704894B2 (en) | 2013-05-10 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device including pixel electrode including oxide |
TWI687748B (zh) | 2013-06-05 | 2020-03-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
CN103995407B (zh) * | 2014-05-08 | 2016-08-24 | 京东方科技集团股份有限公司 | 阵列基板和显示面板 |
US9726946B2 (en) * | 2014-06-17 | 2017-08-08 | Mitsubishi Electric Corporation | Liquid crystal display device and production method for same |
WO2016063169A1 (en) | 2014-10-23 | 2016-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
US10680017B2 (en) | 2014-11-07 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device |
US9917235B2 (en) * | 2016-04-11 | 2018-03-13 | Samsung Display Co., Ltd. | Display apparatus |
KR102514412B1 (ko) * | 2016-05-02 | 2023-03-28 | 삼성디스플레이 주식회사 | 반도체소자 및 이를 채용하는 표시장치 |
US10685983B2 (en) | 2016-11-11 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
WO2018167591A1 (ja) * | 2017-03-13 | 2018-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
KR102517092B1 (ko) * | 2017-08-02 | 2023-04-04 | 삼성전자주식회사 | 가요성 디스플레이 패널을 포함하는 전자 장치 |
CN109903690B (zh) * | 2018-09-06 | 2021-04-09 | 友达光电股份有限公司 | 传感显示设备 |
CN109713076A (zh) * | 2019-02-21 | 2019-05-03 | 京东方科技集团股份有限公司 | 平板探测基板及其制备方法、平坦探测器 |
CN110010626B (zh) * | 2019-04-11 | 2022-04-29 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
KR20220010682A (ko) * | 2020-07-17 | 2022-01-26 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
Family Cites Families (173)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
DE69107101T2 (de) | 1990-02-06 | 1995-05-24 | Semiconductor Energy Lab | Verfahren zum Herstellen eines Oxydfilms. |
JP2585118B2 (ja) | 1990-02-06 | 1997-02-26 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
JP2687667B2 (ja) | 1990-04-17 | 1997-12-08 | 日本電気株式会社 | マトリクス電極基板およびその製造方法 |
JP3179451B2 (ja) | 1991-03-25 | 2001-06-25 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
JPH0588198A (ja) * | 1991-09-27 | 1993-04-09 | Nec Corp | 液晶表示装置 |
JP3357699B2 (ja) * | 1992-02-21 | 2002-12-16 | 株式会社東芝 | 液晶表示装置 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH08179262A (ja) * | 1994-12-20 | 1996-07-12 | Casio Comput Co Ltd | アクティブマトリックスパネルの製造方法 |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
US5847410A (en) | 1995-11-24 | 1998-12-08 | Semiconductor Energy Laboratory Co. | Semiconductor electro-optical device |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JPH09265111A (ja) | 1996-03-28 | 1997-10-07 | Toshiba Corp | アクティブマトリックスパネル |
JP4022783B2 (ja) | 1996-04-19 | 2007-12-19 | 富士通株式会社 | 酸化物電子装置 |
JPH09297321A (ja) * | 1996-04-30 | 1997-11-18 | Hitachi Ltd | 液晶表示基板および液晶表示装置 |
US6104450A (en) * | 1996-11-07 | 2000-08-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, and methods of manufacturing and driving same |
KR100252308B1 (ko) * | 1997-01-10 | 2000-04-15 | 구본준, 론 위라하디락사 | 박막트랜지스터 어레이 |
JPH11183876A (ja) * | 1997-12-24 | 1999-07-09 | Casio Comput Co Ltd | 液晶表示装置及びその駆動方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP4264675B2 (ja) | 1998-08-17 | 2009-05-20 | 栄 田中 | 液晶表示装置とその製造方法 |
US6043971A (en) * | 1998-11-04 | 2000-03-28 | L.G. Philips Lcd Co., Ltd. | Electrostatic discharge protection device for liquid crystal display using a COG package |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP4390991B2 (ja) * | 1999-08-31 | 2009-12-24 | シャープ株式会社 | 液晶表示装置 |
TW457690B (en) | 1999-08-31 | 2001-10-01 | Fujitsu Ltd | Liquid crystal display |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
US7098084B2 (en) * | 2000-03-08 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2002026333A (ja) | 2000-07-11 | 2002-01-25 | Nec Corp | アクティブマトリクス基板の製造方法 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
GB0119299D0 (en) | 2001-08-08 | 2001-10-03 | Koninkl Philips Electronics Nv | Electrostatic discharge protection for pixellated electronic device |
JP2003069028A (ja) * | 2001-08-27 | 2003-03-07 | Casio Comput Co Ltd | 薄膜トランジスタパネル |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP3810681B2 (ja) | 2001-12-20 | 2006-08-16 | シャープ株式会社 | 薄膜トランジスタ基板および液晶表示装置 |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JPWO2003087924A1 (ja) | 2002-04-12 | 2005-08-25 | シチズン時計株式会社 | 液晶表示パネル |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
US7002176B2 (en) | 2002-05-31 | 2006-02-21 | Ricoh Company, Ltd. | Vertical organic transistor |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
JP4565799B2 (ja) | 2002-07-01 | 2010-10-20 | 大林精工株式会社 | 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置 |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4188728B2 (ja) | 2003-03-07 | 2008-11-26 | 三菱電機株式会社 | 液晶表示回路の保護回路 |
JP2004341465A (ja) | 2003-05-14 | 2004-12-02 | Obayashi Seiko Kk | 高品質液晶表示装置とその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP4574158B2 (ja) | 2003-10-28 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体表示装置及びその作製方法 |
US7372513B2 (en) * | 2003-12-30 | 2008-05-13 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and method for fabricating the same |
JP4640916B2 (ja) * | 2004-02-23 | 2011-03-02 | シャープ株式会社 | 表示装置用基板、液晶表示パネル及び液晶表示装置並びにリペア用配線の欠陥検査方法 |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
CN102856390B (zh) | 2004-03-12 | 2015-11-25 | 独立行政法人科学技术振兴机构 | 包含薄膜晶体管的lcd或有机el显示器的转换组件 |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
KR101116816B1 (ko) * | 2004-06-05 | 2012-02-28 | 엘지디스플레이 주식회사 | 반투과형 박막 트랜지스터 기판 및 그 제조 방법 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP4207858B2 (ja) | 2004-07-05 | 2009-01-14 | セイコーエプソン株式会社 | 半導体装置、表示装置及び電子機器 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
BRPI0517560B8 (pt) | 2004-11-10 | 2018-12-11 | Canon Kk | transistor de efeito de campo |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
EP1812969B1 (en) | 2004-11-10 | 2015-05-06 | Canon Kabushiki Kaisha | Field effect transistor comprising an amorphous oxide |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
WO2006051994A2 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Light-emitting device |
DE102004058163A1 (de) * | 2004-12-02 | 2006-06-08 | Kennametal Inc. | Bohr-/Faswerkzeug |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI472037B (zh) | 2005-01-28 | 2015-02-01 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
US7732330B2 (en) | 2005-06-30 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method using an ink-jet method of the same |
KR101201310B1 (ko) * | 2005-06-30 | 2012-11-14 | 엘지디스플레이 주식회사 | 반투과형 액정표시소자의 제조방법 |
US7501393B2 (en) * | 2005-07-27 | 2009-03-10 | Allergan, Inc. | Pharmaceutical compositions comprising cyclosporins |
US7655566B2 (en) | 2005-07-27 | 2010-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007042775A (ja) | 2005-08-02 | 2007-02-15 | Sanyo Epson Imaging Devices Corp | 保護ダイオード、保護ダイオードの製造方法、及び電気光学装置 |
JP4039446B2 (ja) * | 2005-08-02 | 2008-01-30 | エプソンイメージングデバイス株式会社 | 電気光学装置及び電子機器 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4870404B2 (ja) | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製法 |
JP4870403B2 (ja) | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製法 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5078246B2 (ja) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP1770788A3 (en) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5198066B2 (ja) | 2005-10-05 | 2013-05-15 | 出光興産株式会社 | Tft基板及びtft基板の製造方法 |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
JP5089139B2 (ja) * | 2005-11-15 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101112655B1 (ko) | 2005-11-15 | 2012-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기 |
JP5250929B2 (ja) * | 2005-11-30 | 2013-07-31 | 凸版印刷株式会社 | トランジスタおよびその製造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP2007272203A (ja) | 2006-03-06 | 2007-10-18 | Nec Corp | 表示装置 |
JP5110803B2 (ja) | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
JP2007293072A (ja) | 2006-04-26 | 2007-11-08 | Epson Imaging Devices Corp | 電気光学装置の製造方法、電気光学装置および電子機器 |
JP2007293073A (ja) | 2006-04-26 | 2007-11-08 | Epson Imaging Devices Corp | 電気光学装置の製造方法、電気光学装置および電子機器 |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
KR100977978B1 (ko) * | 2006-05-25 | 2010-08-24 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조 방법 |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
US7714535B2 (en) | 2006-07-28 | 2010-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP5216276B2 (ja) | 2006-08-30 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7651896B2 (en) | 2006-08-30 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) * | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
US8143115B2 (en) | 2006-12-05 | 2012-03-27 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
WO2008069255A1 (en) | 2006-12-05 | 2008-06-12 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
KR101363714B1 (ko) * | 2006-12-11 | 2014-02-14 | 엘지디스플레이 주식회사 | 유기 박막트랜지스터, 그 제조 방법, 이를 이용한 정전기방지 소자, 액정표시장치 및 그 제조 방법 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
JP2008171989A (ja) | 2007-01-11 | 2008-07-24 | Toppan Printing Co Ltd | 電界効果型トランジスタ及びその製造方法 |
JP2008171990A (ja) | 2007-01-11 | 2008-07-24 | Toppan Printing Co Ltd | 電界効果型トランジスタとその製造方法 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR101410926B1 (ko) | 2007-02-16 | 2014-06-24 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
KR100858088B1 (ko) | 2007-02-28 | 2008-09-10 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) * | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
CN101878502B (zh) | 2007-11-29 | 2013-04-10 | 株式会社半导体能源研究所 | 液晶显示器件和电子器件 |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
KR101418586B1 (ko) * | 2007-12-18 | 2014-07-14 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이의 제조방법, 이를 갖는 박막트랜지스터 기판 및 이를 갖는 표시장치 |
TWI329777B (en) * | 2008-04-23 | 2010-09-01 | Au Optronics Corp | Active device array substrate, liquid crystal display panel, electro-optical device, and methods of manufacturing and driving the same |
TWI476921B (zh) | 2008-07-31 | 2015-03-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
KR101657957B1 (ko) | 2008-09-12 | 2016-09-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
WO2010029865A1 (en) | 2008-09-12 | 2010-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
CN102881696A (zh) | 2008-09-19 | 2013-01-16 | 株式会社半导体能源研究所 | 显示装置 |
EP2172804B1 (en) | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
KR101652693B1 (ko) | 2008-10-03 | 2016-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN101719493B (zh) | 2008-10-08 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
-
2009
- 2009-08-31 EP EP09814483.5A patent/EP2327070B1/en active Active
- 2009-08-31 KR KR1020177020189A patent/KR101803264B1/ko active IP Right Grant
- 2009-08-31 KR KR1020117008838A patent/KR101636755B1/ko active IP Right Grant
- 2009-08-31 KR KR1020127008109A patent/KR101408715B1/ko active IP Right Grant
- 2009-08-31 KR KR1020167017108A patent/KR101722409B1/ko active IP Right Grant
- 2009-08-31 CN CN2009801371881A patent/CN102160102B/zh active Active
- 2009-08-31 KR KR1020177008269A patent/KR101762112B1/ko active IP Right Grant
- 2009-08-31 WO PCT/JP2009/065542 patent/WO2010032638A1/en active Application Filing
- 2009-09-10 US US12/556,695 patent/US9048320B2/en not_active Expired - Fee Related
- 2009-09-10 JP JP2009209019A patent/JP5436108B2/ja active Active
- 2009-09-15 TW TW098131098A patent/TWI550806B/zh active
-
2013
- 2013-12-10 JP JP2013254782A patent/JP5781584B2/ja active Active
-
2015
- 2015-04-30 US US14/700,455 patent/US10229904B2/en active Active
- 2015-07-15 JP JP2015141028A patent/JP2015232720A/ja not_active Withdrawn
-
2017
- 2017-06-08 JP JP2017113070A patent/JP6423046B2/ja active Active
-
2018
- 2018-10-17 JP JP2018195490A patent/JP6676723B2/ja active Active
- 2018-11-13 US US16/189,396 patent/US10756080B2/en active Active
-
2020
- 2020-03-12 JP JP2020042758A patent/JP6856795B2/ja active Active
- 2020-07-17 US US16/931,780 patent/US20200350308A1/en not_active Abandoned
-
2021
- 2021-03-18 JP JP2021044408A patent/JP7167221B2/ja active Active
-
2022
- 2022-10-26 JP JP2022171311A patent/JP2023017819A/ja not_active Withdrawn
-
2023
- 2023-01-26 US US18/101,642 patent/US20230170345A1/en active Pending
- 2023-12-14 JP JP2023210862A patent/JP2024041759A/ja active Pending
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6600761B1 (ja) | 表示装置 | |
JP6676723B2 (ja) | 半導体装置 | |
JP6408529B2 (ja) | 表示装置 | |
JP5091209B2 (ja) | 表示装置 | |
JP5534769B2 (ja) | 表示装置 | |
JP5436129B2 (ja) | 表示装置 | |
JP2010107976A (ja) | 表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120829 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120829 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130523 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130529 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130606 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130903 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130918 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131203 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131210 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5436108 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |