JP2010107976A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2010107976A JP2010107976A JP2009229378A JP2009229378A JP2010107976A JP 2010107976 A JP2010107976 A JP 2010107976A JP 2009229378 A JP2009229378 A JP 2009229378A JP 2009229378 A JP2009229378 A JP 2009229378A JP 2010107976 A JP2010107976 A JP 2010107976A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- wiring
- layer
- gate electrode
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 claims abstract description 112
- 239000010409 thin film Substances 0.000 claims description 199
- 239000010408 film Substances 0.000 claims description 198
- 239000000758 substrate Substances 0.000 claims description 89
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- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
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- 229920001940 conductive polymer Polymers 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
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- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
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Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
【解決手段】ゲート電極を被覆するゲート絶縁膜と、ゲート絶縁膜上においてゲート電極と端部が重畳する第1配線層及び第2配線層と、少なくともゲート電極と重畳しゲート絶縁膜及び該第1配線層及び該第2配線層における導電層の側面部及び上面部と接する酸化物半導体層とを有する非線形素子を用いて保護回路を構成する。非線形素子のゲート電極は走査線又は信号線と接続され、非線形素子の第1配線層又は第2配線層がゲート電極の電位が印加されるようにゲート電極層と直接接続されていることで、接続抵抗の低減による安定動作と接続部分の占有面積を縮小する。
【選択図】図5
Description
本実施の形態では、画素部とその周辺に非線形素子を含む保護回路が形成された表示装置の一態様を図面を参照して説明する。
この保護回路は、共通配線29に第1端子(ゲート)及び第3端子(ドレイン)を接続し、走査線13に第2端子(ソース)を接続した二つの非線形素子(30b、31b)と、走査線13に第1端子(ゲート)及び第3端子(ドレイン)を接続し、走査線13に第2端子(ソース)を接続した二つの非線形素子(30a、31a)の計四つの非線形素子を用いている。すなわち、整流方向が互いに逆向きになるよう2つの非線形素子を接続した一組を、共通配線29と走査線13の間に二組接続している。言い換えると、走査線13と共通配線29の間に、整流方向が走査線13から共通配線29に向かう2つのトランジスタと、整流方向が共通配線29から走査線13に向かう2つのトランジスタを接続する構成である。このように、共通配線29と走査線13を四つの非線形素子で接続することで、走査線13にサージ電圧が印加された場合のみならず、共通配線29静電気等により帯電した場合であっても、その電荷がそのまま走査線13に流れ込んでしまうのを防止することができる。なお、図9に、4つの非線形素子を基板上に配置する場合の一態様を等価回路図と共に示す。図9(B)に例示する等価回路図は図3と等価であり、図9(B)に記載されたそれぞれの非線形素子は図3に記載された非線形素子に対応する。具体的には、非線形素子740aは非線形素子30bに対応し、非線形素子740bは非線形素子31bに対応し、非線形素子740cは非線形素子30aに対応し、740dは31aに対応する。また、図9の走査線651は走査線13に対応し、共通配線650は共通配線29に対応する。従って、図9(A)に例示する4つの非線形素子を基板上に配置して形成した保護回路の一態様は、図3に例示する保護回路の一態様でもある。
本実施の形態では、実施の形態1において図4(A)に示した保護回路の作製工程の一様態を図6及び図7を参照して説明する。図6及び図7は図4(A)中のQ1−Q2切断線に対応した断面図を表している。
本実施の形態では、本発明の一態様を適用した表示装置として同一基板上に保護回路と、画素部に配置する薄膜トランジスタを有する電子ペーパーの例を示す。
本実施の形態では、本発明の一態様の半導体装置の一例である表示装置において、同一基板上に少なくとも保護回路と、駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について図11乃至図16を用いて以下に説明する。
本発明の一態様においては非線形素子と共に薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、本発明の一態様においては非線形素子と薄膜トランジスタを駆動回路の一部または全体に用い、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
シロキサン系樹脂は、置換基に水素の他、フッ素、アルキル基、またはアリール基のうち少なくとも1種を有していてもよい。なお、これらの材料で形成される絶縁膜を複数積層させることで、絶縁層4021を形成してもよい。
本発明の一態様においては非線形素子と共に薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。
本発明の一態様の表示装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図22、図23に示す。
本発明の一態様に係る半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
11 走査線入力端子
12 信号線入力端子
13 走査線
14 信号線
16 ゲート電極
17 画素部
18 画素
19 画素トランジスタ
20 保持容量部
21 画素電極
22 容量線
23 共通端子
24 保護回路
25 保護回路
26 保護回路
27 容量バス線
28 共通配線
29 共通配線
30 非線形素子
30a 非線形素子
30b 非線形素子
31 非線形素子
31a 非線形素子
31b 非線形素子
100 基板
102 ゲート絶縁膜
107 層間絶縁膜
111 ゲート電極
113 酸化物半導体層
117a 配線層
117b 配線層
128 コンタクトホール
131 レジストマスク
170a 非線形素子
170b 非線形素子
581 薄膜トランジスタ
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
650 共通配線
651 走査線
730a 非線形素子
730b 非線形素子
730c 非線形素子
740a 非線形素子
740b 非線形素子
740c 非線形素子
740d 非線形素子
1000 携帯電話機
1001 筐体
1002 表示部
1003 操作ボタン
1004 外部接続ポート
1005 スピーカ
1006 マイク
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2631 ポスター
2632 車内広告
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4501 基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4519 異方性導電膜
4520 隔壁
5300 基板
5301 画素部
5302 走査線駆動回路
5303 信号線駆動回路
5400 基板
5401 画素部
5402 走査線駆動回路
5403 信号線駆動回路
5404 走査線駆動回路
5501 配線
5502 配線
5503 配線
5504 配線
5505 配線
5506 配線
5543 ノード
5544 ノード
5571 薄膜トランジスタ
5572 薄膜トランジスタ
5573 薄膜トランジスタ
5574 薄膜トランジスタ
5575 薄膜トランジスタ
5576 薄膜トランジスタ
5577 薄膜トランジスタ
5578 薄膜トランジスタ
5601 ドライバIC
5602 スイッチ群
5603a 薄膜トランジスタ
5603b 薄膜トランジスタ
5603c 薄膜トランジスタ
5611 配線
5612 配線
5613 配線
5621 配線
5701 フリップフロップ
5703a タイミング
5703b タイミング
5703c タイミング
5711 配線
5712 配線
5713 配線
5714 配線
5715 配線
5716 配線
5717 配線
5721 信号
5803a タイミング
5803b タイミング
5803c タイミング
5821 信号
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 TFT
7002 発光素子
7003 陰極
7004 発光層
7005 陽極
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 発光層
7015 陽極
7016 遮蔽膜
7017 導電膜
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 発光層
7025 陽極
7027 導電膜
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 入力手段(操作キー)
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (3)
- 絶縁表面を有する基板上に走査線と信号線が交差して設けられ、
画素電極がマトリクス状に配列する画素部を有する表示装置であり、
前記画素部は、酸化物半導体層にチャネル形成領域が形成される薄膜トランジスタを有し、
前記薄膜トランジスタは、前記走査線と接続するゲート電極と、
前記信号線と接続し前記酸化物半導体層に接する第1配線層を有し、
前記基板の周辺部に配設される信号入力端子と前記画素部の間には、非線形素子が設けられ、
前記非線形素子は、ゲート電極及び該ゲート電極を被覆するゲート絶縁膜と、
前記ゲート絶縁膜上において前記ゲート電極と端部が重畳する第1配線層及び第2配線層と、
少なくとも前記ゲート電極と重畳し前記ゲート絶縁膜及び前記第1配線層及び前記第2配線層の側面部及び上面部と接する酸化物半導体層とを有し、
前記非線形素子のゲート電極は走査線又は信号線と接続され、前記非線形素子の第1配線層又は第2配線層が、前記ゲート電極の電位が印加されるようにゲート電極層と直接接続されていることを特徴とする表示装置。 - 絶縁表面を有する基板上に走査線と信号線が交差して設けられ、
画素電極がマトリクス状に配列する画素部を有する表示装置であり、
前記画素部は、酸化物半導体層にチャネル形成領域が形成される薄膜トランジスタを有し、
前記薄膜トランジスタは、前記走査線と接続するゲート電極と、
前記信号線と接続し前記酸化物半導体層に接する第1配線層と、
前記画素電極と接続し前記酸化物半導体層に接する第2配線層とを有し、
前記基板上であり前記画素部の外側領域に、前記走査線と共通配線を接続する保護回路と、
前記信号線と共通配線を接続する保護回路とが設けられ、
前記保護回路は、ゲート電極及び該ゲート電極を被覆するゲート絶縁膜と、
前記ゲート絶縁膜上において前記ゲート電極と端部が重畳する第1配線層及び第2配線層と、
少なくとも前記ゲート電極と重畳し前記ゲート絶縁膜及び前記第1配線層及び前記第2配線層の側面部及び上面部と接する酸化物半導体層とを有する非線形素子を有し、
前記非線形素子のゲート電極と、第1配線層又は第2配線層が直接接続されていることを特徴とする表示装置。 - 請求項1又は2において、
前記酸化物半導体層は、インジウム、ガリウム、及び亜鉛を含むことを特徴とする表示装置。
Priority Applications (1)
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JP2009229378A JP2010107976A (ja) | 2008-10-03 | 2009-10-01 | 表示装置 |
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JP2009229378A JP2010107976A (ja) | 2008-10-03 | 2009-10-01 | 表示装置 |
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JP2013192573A Division JP5766246B2 (ja) | 2008-10-03 | 2013-09-18 | 半導体装置 |
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KR101803720B1 (ko) | 2017-12-01 |
JP6010188B2 (ja) | 2016-10-19 |
JP2017041639A (ja) | 2017-02-23 |
KR20110086017A (ko) | 2011-07-27 |
KR101273972B1 (ko) | 2013-06-12 |
KR101761108B1 (ko) | 2017-07-25 |
US20100084653A1 (en) | 2010-04-08 |
US20110260159A1 (en) | 2011-10-27 |
US8674371B2 (en) | 2014-03-18 |
JP2015213179A (ja) | 2015-11-26 |
JP5766246B2 (ja) | 2015-08-19 |
KR20110083760A (ko) | 2011-07-20 |
US8334540B2 (en) | 2012-12-18 |
US20130092934A1 (en) | 2013-04-18 |
US7989815B2 (en) | 2011-08-02 |
TW201143010A (en) | 2011-12-01 |
JP6317406B2 (ja) | 2018-04-25 |
TW201030923A (en) | 2010-08-16 |
TWI469302B (zh) | 2015-01-11 |
WO2010038819A1 (en) | 2010-04-08 |
KR20170086144A (ko) | 2017-07-25 |
TWI469298B (zh) | 2015-01-11 |
KR101652693B1 (ko) | 2016-09-01 |
JP2014042036A (ja) | 2014-03-06 |
KR20160101725A (ko) | 2016-08-25 |
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