KR100817657B1 - 반도체 기억 장치, 데이터 처리 장치 및 반도체 장치 - Google Patents

반도체 기억 장치, 데이터 처리 장치 및 반도체 장치 Download PDF

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Publication number
KR100817657B1
KR100817657B1 KR1020010002601A KR20010002601A KR100817657B1 KR 100817657 B1 KR100817657 B1 KR 100817657B1 KR 1020010002601 A KR1020010002601 A KR 1020010002601A KR 20010002601 A KR20010002601 A KR 20010002601A KR 100817657 B1 KR100817657 B1 KR 100817657B1
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memory
memory cell
delete delete
semiconductor
flash memory
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KR20010076308A (ko
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도모유끼 이시이
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가부시키가이샤 히타치세이사쿠쇼
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
KR1020010002601A 2000-01-18 2001-01-17 반도체 기억 장치, 데이터 처리 장치 및 반도체 장치 Expired - Fee Related KR100817657B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000013893 2000-01-18
JP2000-013893 2000-01-18

Publications (2)

Publication Number Publication Date
KR20010076308A KR20010076308A (ko) 2001-08-11
KR100817657B1 true KR100817657B1 (ko) 2008-03-27

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Country Status (4)

Country Link
US (5) US6839260B2 (enExample)
JP (2) JP2001274355A (enExample)
KR (1) KR100817657B1 (enExample)
TW (1) TW587252B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014112758A1 (ko) * 2013-01-18 2014-07-24 (주)실리콘화일 듀얼 기판 스택 메모리

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
TW587252B (en) * 2000-01-18 2004-05-11 Hitachi Ltd Semiconductor memory device and data processing device
EP1130516A1 (en) * 2000-03-01 2001-09-05 Hewlett-Packard Company, A Delaware Corporation Address mapping in solid state storage device
DE10020128A1 (de) * 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
JP4353393B2 (ja) * 2001-06-05 2009-10-28 株式会社ルネサステクノロジ 半導体集積回路装置
JP3920851B2 (ja) * 2001-07-17 2007-05-30 三洋電機株式会社 半導体メモリ装置
US6504742B1 (en) * 2001-10-31 2003-01-07 Hewlett-Packard Company 3-D memory device for large storage capacity
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
US6743641B2 (en) 2001-12-20 2004-06-01 Micron Technology, Inc. Method of improving surface planarity prior to MRAM bit material deposition
US6621739B2 (en) 2002-01-18 2003-09-16 Sandisk Corporation Reducing the effects of noise in non-volatile memories through multiple reads
JP2004023062A (ja) * 2002-06-20 2004-01-22 Nec Electronics Corp 半導体装置とその製造方法
US6856030B2 (en) * 2002-07-08 2005-02-15 Viciciv Technology Semiconductor latches and SRAM devices
US7042035B2 (en) * 2002-08-02 2006-05-09 Unity Semiconductor Corporation Memory array with high temperature wiring
US20040098545A1 (en) * 2002-11-15 2004-05-20 Pline Steven L. Transferring data in selectable transfer modes
EP1609154B1 (en) 2003-03-18 2013-12-25 Kabushiki Kaisha Toshiba Phase change memory device
JP2005353912A (ja) * 2004-06-11 2005-12-22 Renesas Technology Corp 半導体記憶装置
US7286439B2 (en) 2004-12-30 2007-10-23 Sandisk 3D Llc Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders
USD557347S1 (en) * 2005-01-04 2007-12-11 Sdd Company Limited Mat type controller
KR100586553B1 (ko) * 2005-01-07 2006-06-08 주식회사 하이닉스반도체 반도체 소자의 게이트 및 이의 형성 방법
JP2008529270A (ja) * 2005-01-25 2008-07-31 ノーザン ライツ セミコンダクター コーポレイション 磁気抵抗メモリを有するシングルチップ
US7338894B2 (en) * 2005-01-26 2008-03-04 Freescale Semiconductor, Inc. Semiconductor device having nitridated oxide layer and method therefor
JP2006221364A (ja) * 2005-02-09 2006-08-24 Toshiba Corp 半導体装置及びｂｉｏｓ認証システム
KR100675517B1 (ko) * 2005-09-09 2007-01-30 주식회사 엑셀반도체 시리얼 플래쉬 메모리 장치 및 프리차아지 방법
KR100723569B1 (ko) * 2005-09-30 2007-05-31 가부시끼가이샤 도시바 상 변화 메모리 장치
US7593256B2 (en) * 2006-03-28 2009-09-22 Contour Semiconductor, Inc. Memory array with readout isolation
US8120949B2 (en) * 2006-04-27 2012-02-21 Avalanche Technology, Inc. Low-cost non-volatile flash-RAM memory
US7539046B2 (en) * 2007-01-31 2009-05-26 Northern Lights Semiconductor Corp. Integrated circuit with magnetic memory
TWI381385B (zh) * 2007-05-04 2013-01-01 Macronix Int Co Ltd 具有嵌入式多類型記憶體的記憶體結構
US7477545B2 (en) * 2007-06-14 2009-01-13 Sandisk Corporation Systems for programmable chip enable and chip address in semiconductor memory
US7715255B2 (en) * 2007-06-14 2010-05-11 Sandisk Corporation Programmable chip enable and chip address in semiconductor memory
JP5557419B2 (ja) * 2007-10-17 2014-07-23 スパンション エルエルシー 半導体装置
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
KR20090082784A (ko) 2008-01-28 2009-07-31 삼성전자주식회사 Ｎｖｒａｍ 셀을 채용한 플래쉬 메모리 장치
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
US8787060B2 (en) 2010-11-03 2014-07-22 Netlist, Inc. Method and apparatus for optimizing driver load in a memory package
US8521979B2 (en) * 2008-05-29 2013-08-27 Micron Technology, Inc. Memory systems and methods for controlling the timing of receiving read data
US20090296445A1 (en) * 2008-06-02 2009-12-03 Shepard Daniel R Diode decoder array with non-sequential layout and methods of forming the same
US7979757B2 (en) * 2008-06-03 2011-07-12 Micron Technology, Inc. Method and apparatus for testing high capacity/high bandwidth memory devices
KR20090126077A (ko) * 2008-06-03 2009-12-08 삼성전자주식회사 메모리 반도체 장치 및 그 제조 방법
US8289760B2 (en) 2008-07-02 2012-10-16 Micron Technology, Inc. Multi-mode memory device and method having stacked memory dice, a logic die and a command processing circuit and operating in direct and indirect modes
US8756486B2 (en) * 2008-07-02 2014-06-17 Micron Technology, Inc. Method and apparatus for repairing high capacity/high bandwidth memory devices
US7855931B2 (en) 2008-07-21 2010-12-21 Micron Technology, Inc. Memory system and method using stacked memory device dice, and system using the memory system
US8127204B2 (en) 2008-08-15 2012-02-28 Micron Technology, Inc. Memory system and method using a memory device die stacked with a logic die using data encoding, and system using the memory system
US8130528B2 (en) * 2008-08-25 2012-03-06 Sandisk 3D Llc Memory system with sectional data lines
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US20100195393A1 (en) * 2009-01-30 2010-08-05 Unity Semiconductor Corporation Data storage system with refresh in place
JP5632584B2 (ja) * 2009-02-05 2014-11-26 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
US8054673B2 (en) 2009-04-16 2011-11-08 Seagate Technology Llc Three dimensionally stacked non volatile memory units
US8213243B2 (en) * 2009-12-15 2012-07-03 Sandisk 3D Llc Program cycle skip
US8223525B2 (en) * 2009-12-15 2012-07-17 Sandisk 3D Llc Page register outside array and sense amplifier interface
CN103985760B (zh) * 2009-12-25 2017-07-18 株式会社半导体能源研究所 半导体装置
JP5289353B2 (ja) * 2010-02-05 2013-09-11 株式会社東芝 半導体記憶装置
WO2011114866A1 (en) * 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8355281B2 (en) * 2010-04-20 2013-01-15 Micron Technology, Inc. Flash memory having multi-level architecture
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012256821A (ja) * 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI670711B (zh) 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
KR101188263B1 (ko) 2010-10-14 2012-10-05 에스케이하이닉스 주식회사 반도체 메모리 장치
KR101924231B1 (ko) * 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR102130257B1 (ko) * 2010-11-05 2020-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8400808B2 (en) 2010-12-16 2013-03-19 Micron Technology, Inc. Phase interpolators and push-pull buffers
US9601178B2 (en) * 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8780614B2 (en) * 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI520273B (zh) * 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
WO2012121265A1 (en) * 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8446772B2 (en) 2011-08-04 2013-05-21 Sandisk Technologies Inc. Memory die self-disable if programmable element is not trusted
US9779814B2 (en) * 2011-08-09 2017-10-03 Flashsilicon Incorporation Non-volatile static random access memory devices and methods of operations
US20130083048A1 (en) * 2011-09-29 2013-04-04 Advanced Micro Devices, Inc. Integrated circuit with active memory and passive variable resistive memory with shared memory control logic and method of making same
US9230615B2 (en) * 2011-10-24 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
JP6105266B2 (ja) * 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
JP2013161878A (ja) * 2012-02-02 2013-08-19 Renesas Electronics Corp 半導体装置、および半導体装置の製造方法
US9312257B2 (en) * 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101975528B1 (ko) 2012-07-17 2019-05-07 삼성전자주식회사 패스트 어레이 영역을 갖는 반도체 메모리 셀 어레이 및 그것을 포함하는 반도체 메모리
US9536840B2 (en) 2013-02-12 2017-01-03 Qualcomm Incorporated Three-dimensional (3-D) integrated circuits (3DICS) with graphene shield, and related components and methods
US9171608B2 (en) 2013-03-15 2015-10-27 Qualcomm Incorporated Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICS), 3DIC processor cores, and methods
US8947972B2 (en) 2013-03-15 2015-02-03 Sandisk 3D Llc Dynamic address grouping for parallel programming in non-volatile memory
US8947944B2 (en) 2013-03-15 2015-02-03 Sandisk 3D Llc Program cycle skip evaluation before write operations in non-volatile memory
US9165088B2 (en) 2013-07-08 2015-10-20 Hewlett-Packard Development Company, L.P. Apparatus and method for multi-mode storage
US9171597B2 (en) 2013-08-30 2015-10-27 Micron Technology, Inc. Apparatuses and methods for providing strobe signals to memories
US9165623B2 (en) * 2013-10-13 2015-10-20 Taiwan Semiconductor Manufacturing Company Limited Memory arrangement
US9711225B2 (en) 2013-10-16 2017-07-18 Sandisk Technologies Llc Regrouping and skipping cycles in non-volatile memory
JP6139370B2 (ja) * 2013-10-17 2017-05-31 株式会社東芝 不揮発性半導体記憶装置
WO2015116188A1 (en) * 2014-01-31 2015-08-06 Hewlett-Packard Development Company, L.P. Non-volatile memory with multiple latency tiers
WO2015170220A1 (en) * 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
JP6580863B2 (ja) * 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
JP2017527976A (ja) * 2014-06-16 2017-09-21 インテル・コーポレーション 高電圧デバイスを集積させたシリコンダイ
US9564215B2 (en) 2015-02-11 2017-02-07 Sandisk Technologies Llc Independent sense amplifier addressing and quota sharing in non-volatile memory
KR20160124294A (ko) 2015-04-16 2016-10-27 삼성전자주식회사 주변 영역 상에 적층된 셀 영역을 갖는 반도체 소자 및 그의 제조방법
WO2016181256A1 (ja) * 2015-05-12 2016-11-17 株式会社半導体エネルギー研究所 半導体装置、電子部品および電子機器
US9697874B1 (en) * 2015-06-09 2017-07-04 Crossbar, Inc. Monolithic memory comprising 1T1R code memory and 1TnR storage class memory
US11120884B2 (en) 2015-09-30 2021-09-14 Sunrise Memory Corporation Implementing logic function and generating analog signals using NOR memory strings
US9842651B2 (en) 2015-11-25 2017-12-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin film transistor strings
US9892800B2 (en) 2015-09-30 2018-02-13 Sunrise Memory Corporation Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
KR102366798B1 (ko) * 2017-06-13 2022-02-25 삼성전자주식회사 반도체 소자
US10861902B2 (en) 2017-06-13 2020-12-08 Samsung Electronics Co., Ltd. Semiconductor device having magnetic tunnel junction pattern
KR102482896B1 (ko) 2017-12-28 2022-12-30 삼성전자주식회사 이종 휘발성 메모리 칩들을 포함하는 메모리 장치 및 이를 포함하는 전자 장치
CN110010170B (zh) * 2018-01-05 2021-04-02 旺宏电子股份有限公司 存储装置的操作方法及其存储系统
JP7061524B2 (ja) 2018-06-28 2022-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置のメンテナンス装置およびメンテナンス方法
US11569243B2 (en) * 2018-09-25 2023-01-31 Intel Corporation Stacked-substrate DRAM semiconductor devices
JP2020064969A (ja) 2018-10-17 2020-04-23 キオクシア株式会社 半導体装置およびその製造方法
KR20240137116A (ko) * 2019-04-30 2024-09-19 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 상변화 메모리를 갖는 3차원 메모리 디바이스
WO2020232574A1 (en) * 2019-05-17 2020-11-26 Yangtze Memory Technologies Co., Ltd. Data buffering operation of three-dimensional memory device with static random-access memory
EP3909048B1 (en) 2019-05-17 2025-08-20 Yangtze Memory Technologies Co., Ltd. Cache program operation of three-dimensional memory device with static random-access memory
CN110291631A (zh) * 2019-05-17 2019-09-27 长江存储科技有限责任公司 具有静态随机存取存储器的三维存储器件
JP7320227B2 (ja) * 2019-09-13 2023-08-03 本田技研工業株式会社 半導体装置
WO2021127218A1 (en) 2019-12-19 2021-06-24 Sunrise Memory Corporation Process for preparing a channel region of a thin-film transistor
TWI767512B (zh) 2020-01-22 2022-06-11 美商森恩萊斯記憶體公司 薄膜儲存電晶體中冷電子抹除
CN115413367A (zh) 2020-02-07 2022-11-29 日升存储公司 具有低有效延迟的高容量存储器电路
WO2021207050A1 (en) 2020-04-08 2021-10-14 Sunrise Memory Corporation Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional nor memory string array
DE112021004465T5 (de) 2020-08-27 2023-06-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Anzeigevorrichtung und elektronische Vorrichtung
WO2022108848A1 (en) 2020-11-17 2022-05-27 Sunrise Memory Corporation Methods for reducing disturb errors by refreshing data alongside programming or erase operations
TW202310429A (zh) 2021-07-16 2023-03-01 美商日升存儲公司 薄膜鐵電電晶體的三維記憶體串陣列
US12402319B2 (en) 2021-09-14 2025-08-26 Sunrise Memory Corporation Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel
US11974422B2 (en) * 2021-11-04 2024-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999038078A1 (fr) * 1998-01-21 1999-07-29 Tokyo Electron Limited Dispositif de stockage, dispositif de cryptage/decryptage et procede permettant d'acceder a une memoire remanente

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219550A (ja) 1986-03-19 1987-09-26 Sharp Corp 半導体記憶素子
JP2778977B2 (ja) * 1989-03-14 1998-07-23 株式会社東芝 半導体装置及びその製造方法
JP3167036B2 (ja) 1991-06-26 2001-05-14 川崎製鉄株式会社 半導体記憶装置
JPH0582787A (ja) 1991-09-19 1993-04-02 Sony Corp 薄膜トランジスタ型不揮発性半導体メモリ装置
DE69426695T2 (de) * 1993-04-23 2001-08-09 Irvine Sensors Corp., Costa Mesa Elektronisches modul mit einem stapel von ic-chips
JPH09504654A (ja) * 1993-08-13 1997-05-06 イルビン センサーズ コーポレーション 単一ｉｃチップに代わるｉｃチップ積層体
JPH07153286A (ja) * 1993-11-30 1995-06-16 Sony Corp 半導体不揮発性記憶装置
US5488579A (en) * 1994-04-29 1996-01-30 Motorola Inc. Three-dimensionally integrated nonvolatile SRAM cell and process
JP3319667B2 (ja) * 1994-12-20 2002-09-03 松下電器産業株式会社 映像フォーマット変換装置
JP2977023B2 (ja) * 1996-09-30 1999-11-10 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
US6492719B2 (en) * 1999-07-30 2002-12-10 Hitachi, Ltd. Semiconductor device
KR100430984B1 (ko) * 1996-12-04 2004-05-12 가부시키가이샤 히타치세이사쿠쇼 반도체장치
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
JP3670449B2 (ja) * 1997-07-09 2005-07-13 株式会社東芝 半導体装置
JPH11149788A (ja) * 1997-11-17 1999-06-02 Oki Electric Ind Co Ltd 半導体記憶装置及びその制御方法
JP3638770B2 (ja) * 1997-12-05 2005-04-13 東京エレクトロンデバイス株式会社 テスト機能を備える記憶装置
JPH11204742A (ja) * 1998-01-20 1999-07-30 Sony Corp メモリ及び情報機器
JP4538693B2 (ja) 1998-01-26 2010-09-08 ソニー株式会社 メモリ素子およびその製造方法
US6040605A (en) * 1998-01-28 2000-03-21 Hitachi, Ltd. Semiconductor memory device
JPH11214640A (ja) * 1998-01-28 1999-08-06 Hitachi Ltd 半導体記憶素子、半導体記憶装置とその制御方法
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP4409018B2 (ja) 1999-12-08 2010-02-03 パナソニック株式会社 半導体メモリ装置
TW587252B (en) * 2000-01-18 2004-05-11 Hitachi Ltd Semiconductor memory device and data processing device
JP3871853B2 (ja) * 2000-05-26 2007-01-24 株式会社ルネサステクノロジ 半導体装置及びその動作方法
US6915167B2 (en) * 2001-01-05 2005-07-05 Medtronic, Inc. Method and apparatus for hardware/firmware trap
US6795326B2 (en) * 2001-12-12 2004-09-21 Micron Technology, Inc. Flash array implementation with local and global bit lines
JP4499982B2 (ja) * 2002-09-11 2010-07-14 株式会社日立製作所 メモリシステム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999038078A1 (fr) * 1998-01-21 1999-07-29 Tokyo Electron Limited Dispositif de stockage, dispositif de cryptage/decryptage et procede permettant d'acceder a une memoire remanente

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014112758A1 (ko) * 2013-01-18 2014-07-24 (주)실리콘화일 듀얼 기판 스택 메모리

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