KR100777501B1 - 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치 - Google Patents
형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치 Download PDFInfo
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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- H01L33/50—Wavelength conversion elements
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Abstract
Description
Claims (42)
- Eu2+으로 부활(付活)되고, 또한, 600㎚ 이상 660㎚ 미만의 파장 영역에 발광 피크를 갖는 적색 형광체와, Eu2+ 만으로 부활되고, 또한, 500㎚ 이상 560㎚ 미만의 파장 영역에 발광 피크를 갖는 녹색 형광체를 포함하는 형광체층과, 청색 발광 소자를 구비하고,상기 발광 소자는 440㎚ 이상 500㎚ 미만의 파장 영역에 발광 피크를 갖는 청색광을 발하고,상기 적색 형광체와 상기 녹색 형광체는, 상기 발광소자가 발하는 광에 의해 여기되어 발광하고,상기 발광 소자가 발하는 발광 성분과, 상기 적색 형광체와 상기 녹색 형광체가 발하는 발광 성분을 출력광으로서 적어도 포함하는 발광 장치로서,상기 적색 형광체는, 조성식 (M1-xEux)AlSiN3으로 나타내는 형광체이고,상기 M은, Mg, Ca, Sr, Ba 및 Zn에서 선택되는 적어도 1개의 원소이고,상기 x는, 식 0.005≤x≤0.3을 만족하는 수치이고,상기 녹색 형광체는, 조성식 (Ba, Sr)2SiO4 : Eu2+ 으로 나타내는 형광체이고,상기 형광체층은, 황화물계 형광체를 실질적으로 포함하지 않고, 또한 상기 적색 형광체에만 질화물 형광체를 이용하고,상기 녹색 형광체는, 내부 양자 효율이 적어도 440㎚ 이상 500㎚ 미만의 파장 영역에서 85% 이상인 것을 특징으로 하는 발광 장치.
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JPJP-P-2004-00131770 | 2004-04-27 | ||
JP2004131770 | 2004-04-27 | ||
JPJP-P-2004-00182797 | 2004-06-21 | ||
JP2004182797 | 2004-06-21 | ||
JP2004194196 | 2004-06-30 | ||
JPJP-P-2004-00194196 | 2004-06-30 | ||
JP2004250739A JP2005336450A (ja) | 2004-04-27 | 2004-08-30 | 蛍光体組成物とその製造方法、並びにその蛍光体組成物を用いた発光装置 |
JPJP-P-2004-00250739 | 2004-08-30 | ||
JP2004363534A JP4128564B2 (ja) | 2004-04-27 | 2004-12-15 | 発光装置 |
JPJP-P-2004-00363534 | 2004-12-15 | ||
PCT/JP2005/008395 WO2005103199A1 (en) | 2004-04-27 | 2005-04-26 | Phosphor composition and method for producing the same, and light-emitting device using the same |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013007610A (ja) * | 2011-06-23 | 2013-01-10 | Canon Inc | 測色器及び画像形成装置 |
US9087968B2 (en) | 2011-04-29 | 2015-07-21 | Samsung Electronics Co., Ltd. | White light emitting device, display apparatus and illumination apparatus |
Families Citing this family (274)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10036940A1 (de) * | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lumineszenz-Konversions-LED |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
TWI359187B (en) * | 2003-11-19 | 2012-03-01 | Panasonic Corp | Method for preparing nitridosilicate-based compoun |
JP3837588B2 (ja) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP3931239B2 (ja) | 2004-02-18 | 2007-06-13 | 独立行政法人物質・材料研究機構 | 発光素子及び照明器具 |
US7830472B2 (en) | 2004-04-26 | 2010-11-09 | Mitsubishi Chemical Corporation | Blue color composition for color filter, color filter, and color image display device |
US7391060B2 (en) | 2004-04-27 | 2008-06-24 | Matsushita Electric Industrial Co., Ltd. | Phosphor composition and method for producing the same, and light-emitting device using the same |
JP4565141B2 (ja) * | 2004-06-30 | 2010-10-20 | 独立行政法人物質・材料研究機構 | 蛍光体と発光器具 |
JP4511885B2 (ja) * | 2004-07-09 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体及びled並びに光源 |
US7476337B2 (en) * | 2004-07-28 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
US7476338B2 (en) | 2004-08-27 | 2009-01-13 | Dowa Electronics Materials Co., Ltd. | Phosphor and manufacturing method for the same, and light source |
DE112005001982T5 (de) * | 2004-08-31 | 2007-08-02 | Sumitomo Chemical Co., Ltd. | Fluoreszierende Substanz |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
WO2006095285A1 (en) | 2005-03-09 | 2006-09-14 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising a radiation source and a fluorescent material |
WO2006098450A1 (ja) * | 2005-03-18 | 2006-09-21 | Mitsubishi Chemical Corporation | 発光装置、白色発光装置、照明装置及び画像表示装置 |
KR101142519B1 (ko) * | 2005-03-31 | 2012-05-08 | 서울반도체 주식회사 | 적색 형광체 및 녹색 형광체를 갖는 백색 발광다이오드를채택한 백라이트 패널 |
CN104759615A (zh) | 2005-04-01 | 2015-07-08 | 三菱化学株式会社 | 无机功能材料原料用合金粉末及荧光体 |
CN101175835B (zh) | 2005-05-24 | 2012-10-10 | 三菱化学株式会社 | 荧光体及其应用 |
TWI325441B (en) * | 2005-05-24 | 2010-06-01 | Seoul Semiconductor Co Ltd | Green phosphor of thiogallate, red phosphor of alkaline earth sulfide and white light emitting device thereof |
JP2007049114A (ja) | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
WO2006131924A2 (en) | 2005-06-07 | 2006-12-14 | Oree, Advanced Illumination Solutions Inc. | Illumination apparatus |
US8215815B2 (en) | 2005-06-07 | 2012-07-10 | Oree, Inc. | Illumination apparatus and methods of forming the same |
US8272758B2 (en) | 2005-06-07 | 2012-09-25 | Oree, Inc. | Illumination apparatus and methods of forming the same |
KR101060216B1 (ko) * | 2005-07-01 | 2011-08-29 | 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 | 형광체와 그 제조 방법 및 조명 기구 |
KR101437839B1 (ko) * | 2005-07-14 | 2014-09-04 | 코닌클리케 필립스 엔.브이. | 전계 발광 장치 |
KR100691273B1 (ko) * | 2005-08-23 | 2007-03-12 | 삼성전기주식회사 | 복합 형광체 분말, 이를 이용한 발광 장치 및 복합 형광체분말의 제조 방법 |
US7262439B2 (en) * | 2005-11-22 | 2007-08-28 | Lumination Llc | Charge compensated nitride phosphors for use in lighting applications |
US7859182B2 (en) | 2005-08-31 | 2010-12-28 | Lumination Llc | Warm white LED-based lamp incoporating divalent EU-activated silicate yellow emitting phosphor |
US20070052342A1 (en) * | 2005-09-01 | 2007-03-08 | Sharp Kabushiki Kaisha | Light-emitting device |
DE102006004397A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
KR100724591B1 (ko) | 2005-09-30 | 2007-06-04 | 서울반도체 주식회사 | 발광 소자 및 이를 포함한 led 백라이트 |
JP4932248B2 (ja) * | 2005-12-21 | 2012-05-16 | Necライティング株式会社 | 黄色発光蛍光体、それを用いた白色発光素子、およびそれを用いた照明装置 |
KR100764148B1 (ko) * | 2006-01-17 | 2007-10-05 | 루시미아 주식회사 | 시트상 형광체와 그 제조방법 및 이를 이용한 발광장치 |
KR100990699B1 (ko) * | 2006-02-09 | 2010-10-29 | 우베 고산 가부시키가이샤 | 청색 발광 형광체의 제조 방법 |
US20100164365A1 (en) * | 2006-02-10 | 2010-07-01 | Mitsubishi Chemical Corporation | Phosphor, method for producing same, phosphor-containing composition, light-emitting device, image display, and illuminating device |
WO2007105845A1 (en) * | 2006-03-16 | 2007-09-20 | Seoul Semiconductor Co., Ltd. | Fluorescent material and light emitting diode using the same |
JP5032043B2 (ja) | 2006-03-27 | 2012-09-26 | 豊田合成株式会社 | フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置 |
JP2007300069A (ja) * | 2006-04-04 | 2007-11-15 | Toyoda Gosei Co Ltd | 発光素子、この発光素子を用いた発光装置及びこの発光素子の製造方法 |
TW200807104A (en) | 2006-04-19 | 2008-02-01 | Mitsubishi Chem Corp | Color image display device |
KR100731678B1 (ko) * | 2006-05-08 | 2007-06-22 | 서울반도체 주식회사 | 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치 |
CN101448914B (zh) | 2006-05-19 | 2012-10-03 | 三菱化学株式会社 | 含氮合金以及使用该含氮合金的荧光体制造方法 |
WO2008001799A1 (en) | 2006-06-27 | 2008-01-03 | Mitsubishi Chemical Corporation | Illuminating device |
KR101258229B1 (ko) * | 2006-06-30 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
JP4957110B2 (ja) * | 2006-08-03 | 2012-06-20 | 日亜化学工業株式会社 | 発光装置 |
DE102006036577A1 (de) * | 2006-08-04 | 2008-02-07 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Rot emittierender Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff |
US8617913B2 (en) * | 2006-08-23 | 2013-12-31 | Rockwell Collins, Inc. | Alkali silicate glass based coating and method for applying |
US8637980B1 (en) | 2007-12-18 | 2014-01-28 | Rockwell Collins, Inc. | Adhesive applications using alkali silicate glass for electronics |
US8174830B2 (en) | 2008-05-06 | 2012-05-08 | Rockwell Collins, Inc. | System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling |
US7915527B1 (en) | 2006-08-23 | 2011-03-29 | Rockwell Collins, Inc. | Hermetic seal and hermetic connector reinforcement and repair with low temperature glass coatings |
US8076185B1 (en) | 2006-08-23 | 2011-12-13 | Rockwell Collins, Inc. | Integrated circuit protection and ruggedization coatings and methods |
US8581108B1 (en) | 2006-08-23 | 2013-11-12 | Rockwell Collins, Inc. | Method for providing near-hermetically coated integrated circuit assemblies |
US8084855B2 (en) | 2006-08-23 | 2011-12-27 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prevention coatings and methods |
US8166645B2 (en) * | 2006-08-23 | 2012-05-01 | Rockwell Collins, Inc. | Method for providing near-hermetically coated, thermally protected integrated circuit assemblies |
JP2008050496A (ja) * | 2006-08-25 | 2008-03-06 | Sony Corp | 発光組成物、光源装置、及び表示装置 |
CN101523625B (zh) * | 2006-10-12 | 2012-05-23 | 松下电器产业株式会社 | 发光装置及其制造方法 |
JP5076446B2 (ja) * | 2006-10-30 | 2012-11-21 | ソニー株式会社 | 発光組成物、光源装置、表示装置、発光組成物の製造方法 |
JP2008116849A (ja) * | 2006-11-07 | 2008-05-22 | Sony Corp | 表示装置 |
JP5367218B2 (ja) * | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
JP4228012B2 (ja) * | 2006-12-20 | 2009-02-25 | Necライティング株式会社 | 赤色発光窒化物蛍光体およびそれを用いた白色発光素子 |
US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
BRPI0807118A2 (pt) * | 2007-02-06 | 2014-04-08 | Koninkl Philips Electronics Nv | Material, uso de um material, dispositivo de emissão de luz, e, sistema. |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
KR101499269B1 (ko) * | 2007-02-22 | 2015-03-09 | 크리, 인코포레이티드 | 발광 장치, 발광 방법, 광 필터 및 광 필터링 방법 |
WO2008109296A1 (en) * | 2007-03-08 | 2008-09-12 | 3M Innovative Properties Company | Array of luminescent elements |
DE102007015474A1 (de) * | 2007-03-30 | 2008-10-02 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102007018099A1 (de) | 2007-04-17 | 2008-10-23 | Osram Gesellschaft mit beschränkter Haftung | Rot emittierender Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff |
WO2008129454A2 (en) * | 2007-04-20 | 2008-10-30 | Philips Intellectual Property & Standards Gmbh | White emitting light source and luminescent material with improved colour stability |
US7781779B2 (en) * | 2007-05-08 | 2010-08-24 | Luminus Devices, Inc. | Light emitting devices including wavelength converting material |
US9279079B2 (en) * | 2007-05-30 | 2016-03-08 | Sharp Kabushiki Kaisha | Method of manufacturing phosphor, light-emitting device, and image display apparatus |
EP2175007A4 (en) * | 2007-06-29 | 2011-10-19 | Mitsubishi Chem Corp | LUMINOPHORE, METHOD FOR PRODUCING LUMINOPHORE, COMPOSITION CONTAINING LUMINOPHORE, AND LIGHT EMITTING DEVICE |
WO2009003988A1 (en) * | 2007-06-29 | 2009-01-08 | Leuchtstoffwerk Breitungen Gmbh | Ce3+, eu2+ and mn2+ - activated alkaline earth silicon nitride phosphors and white-light emitting led |
EP2009078A1 (en) * | 2007-06-29 | 2008-12-31 | Leuchtstoffwerk Breitungen GmbH | Ce3+, Eu2+ -activated alkaline earth silicon nitride phosphors |
CN103215036B (zh) * | 2007-07-09 | 2014-11-05 | 夏普株式会社 | 荧光体粒子组以及使用其的发光装置 |
EP2172983B1 (en) * | 2007-07-19 | 2014-11-19 | Sharp Kabushiki Kaisha | Light emitting device |
JP2009046668A (ja) * | 2007-08-21 | 2009-03-05 | Samsung Sdi Co Ltd | 白色蛍光体、これを用いる発光装置、及び表示装置 |
US8648523B2 (en) * | 2007-08-30 | 2014-02-11 | Nichia Corporation | Light emitting device including light emitting element and phosphor |
JP5578597B2 (ja) | 2007-09-03 | 2014-08-27 | 独立行政法人物質・材料研究機構 | 蛍光体及びその製造方法、並びにそれを用いた発光装置 |
WO2009050611A1 (en) * | 2007-10-15 | 2009-04-23 | Philips Intellectual Property & Standards Gmbh | Light emitting device comprising a multiphase sialon-based ceramic material |
US8866169B2 (en) * | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
EP2229426B1 (en) | 2007-12-03 | 2011-05-25 | Philips Intellectual Property & Standards GmbH | Light emitting device comprising a green emitting sialon-based material |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8363189B2 (en) * | 2007-12-18 | 2013-01-29 | Rockwell Collins, Inc. | Alkali silicate glass for displays |
US7929816B2 (en) * | 2007-12-19 | 2011-04-19 | Oree, Inc. | Waveguide sheet containing in-coupling, propagation, and out-coupling regions |
US8550684B2 (en) | 2007-12-19 | 2013-10-08 | Oree, Inc. | Waveguide-based packaging structures and methods for discrete lighting elements |
US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
JP2009167338A (ja) * | 2008-01-18 | 2009-07-30 | Sharp Corp | 波長変換部材およびこれを備える発光装置、ならびに蛍光体 |
US8436526B2 (en) * | 2008-02-11 | 2013-05-07 | Sensor Electronic Technology, Inc. | Multiwavelength solid-state lamps with an enhanced number of rendered colors |
WO2009110285A1 (ja) | 2008-03-03 | 2009-09-11 | シャープ株式会社 | 発光装置 |
US20090225566A1 (en) * | 2008-03-05 | 2009-09-10 | Micha Zimmermann | Illumination apparatus and methods of forming the same |
US7990045B2 (en) * | 2008-03-15 | 2011-08-02 | Sensor Electronic Technology, Inc. | Solid-state lamps with partial conversion in phosphors for rendering an enhanced number of colors |
JP2009227701A (ja) * | 2008-03-19 | 2009-10-08 | Niigata Univ | 蛍光体およびその製造方法 |
CN102036999A (zh) * | 2008-03-21 | 2011-04-27 | 内诺格雷姆公司 | 金属硅氮化物或金属硅氧氮化物亚微米荧光粉颗粒及合成这些荧光粉的方法 |
CN102017206A (zh) * | 2008-04-17 | 2011-04-13 | 株式会社东芝 | 白光发射设备、背光灯、液晶显示设备、以及照明设备 |
US8650886B2 (en) * | 2008-09-12 | 2014-02-18 | Rockwell Collins, Inc. | Thermal spreader assembly with flexible liquid cooling loop having rigid tubing sections and flexible tubing sections |
US8616266B2 (en) * | 2008-09-12 | 2013-12-31 | Rockwell Collins, Inc. | Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid |
US8205337B2 (en) * | 2008-09-12 | 2012-06-26 | Rockwell Collins, Inc. | Fabrication process for a flexible, thin thermal spreader |
US8221089B2 (en) | 2008-09-12 | 2012-07-17 | Rockwell Collins, Inc. | Thin, solid-state mechanism for pumping electrically conductive liquids in a flexible thermal spreader |
US8274215B2 (en) * | 2008-12-15 | 2012-09-25 | Intematix Corporation | Nitride-based, red-emitting phosphors |
US8242525B2 (en) * | 2008-05-20 | 2012-08-14 | Lightscape Materials, Inc. | Silicate-based phosphors and LED lighting devices using the same |
EP2297278A1 (en) | 2008-06-02 | 2011-03-23 | Panasonic Corporation | Semiconductor light emitting apparatus and light source apparatus using the same |
US8691113B2 (en) | 2008-07-02 | 2014-04-08 | Dexerials Corporation | Red phosphor, method for producing red phosphor, white light source, illuminating device, and liquid crystal display device |
US8297786B2 (en) | 2008-07-10 | 2012-10-30 | Oree, Inc. | Slim waveguide coupling apparatus and method |
US8301002B2 (en) | 2008-07-10 | 2012-10-30 | Oree, Inc. | Slim waveguide coupling apparatus and method |
DE102008038249A1 (de) * | 2008-08-18 | 2010-02-25 | Osram Gesellschaft mit beschränkter Haftung | alpha-Sialon-Leuchtstoff |
JP2010080935A (ja) | 2008-08-28 | 2010-04-08 | Panasonic Corp | 半導体発光装置及びこれを用いたバックライト光源、バックライト光源システム、表示装置、電子機器 |
US8378369B2 (en) | 2008-09-09 | 2013-02-19 | Showa Denko K.K. | Light emitting unit, light emitting module, and display device |
US8119040B2 (en) | 2008-09-29 | 2012-02-21 | Rockwell Collins, Inc. | Glass thick film embedded passive material |
JP2010090231A (ja) * | 2008-10-07 | 2010-04-22 | Canon Inc | 画像表示装置 |
US20100098377A1 (en) * | 2008-10-16 | 2010-04-22 | Noam Meir | Light confinement using diffusers |
US8008845B2 (en) * | 2008-10-24 | 2011-08-30 | Cree, Inc. | Lighting device which includes one or more solid state light emitting device |
CN102217102B (zh) * | 2008-11-14 | 2015-07-15 | 三星电子株式会社 | 半导体发光器件 |
US9428688B2 (en) | 2008-11-17 | 2016-08-30 | Cree, Inc. | Phosphor composition |
TWI391471B (zh) * | 2008-11-21 | 2013-04-01 | Univ Nat Cheng Kung | Preparation method of nitride fluorescent powder |
DE102008058621A1 (de) * | 2008-11-22 | 2010-05-27 | Merck Patent Gmbh | Co-dotierte 1-1-2-Nitride |
US8360617B2 (en) * | 2008-11-25 | 2013-01-29 | Samsung Electronics Co., Ltd. | Lighting system including LED with glass-coated quantum-dots |
JP5641384B2 (ja) | 2008-11-28 | 2014-12-17 | 独立行政法人物質・材料研究機構 | 表示装置用照明装置及び表示装置 |
US8456082B2 (en) | 2008-12-01 | 2013-06-04 | Ifire Ip Corporation | Surface-emission light source with uniform illumination |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
US8624527B1 (en) | 2009-03-27 | 2014-01-07 | Oree, Inc. | Independently controllable illumination device |
WO2010129374A2 (en) | 2009-04-28 | 2010-11-11 | Qd Vision, Inc. | Optical materials, optical components, and methods |
JP4741033B2 (ja) * | 2009-05-12 | 2011-08-03 | オリンパスメディカルシステムズ株式会社 | 被検体内撮像システムおよび被検体内導入装置 |
US8328406B2 (en) | 2009-05-13 | 2012-12-11 | Oree, Inc. | Low-profile illumination device |
WO2010150202A2 (en) | 2009-06-24 | 2010-12-29 | Oree, Advanced Illumination Solutions Inc. | Illumination apparatus with high conversion efficiency and methods of forming the same |
EP2432037B1 (en) | 2009-08-26 | 2019-05-22 | Mitsubishi Chemical Corporation | Semiconductor white light-emitting device |
WO2011024296A1 (ja) | 2009-08-28 | 2011-03-03 | 株式会社 東芝 | 蛍光体の製造方法およびそれにより製造された蛍光体 |
JP2013505588A (ja) * | 2009-09-18 | 2013-02-14 | ソラア インコーポレーテッド | 電流密度操作を用いた電力発光ダイオード及び方法 |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
KR101148998B1 (ko) * | 2009-09-18 | 2012-05-22 | 미쓰이 긴조꾸 고교 가부시키가이샤 | 형광체 |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
WO2011060180A1 (en) | 2009-11-11 | 2011-05-19 | Qd Vision, Inc. | Device including quantum dots |
US20110127905A1 (en) * | 2009-12-02 | 2011-06-02 | General Electric Company | Alkaline earth borate phosphors |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
WO2011105666A1 (ko) * | 2010-02-24 | 2011-09-01 | Shim Hyun-Seop | 엘이디 색변환용 유브이 코팅 조성물 |
WO2011108053A1 (ja) * | 2010-03-01 | 2011-09-09 | パナソニック株式会社 | Ledランプおよびled照明装置 |
US8508127B2 (en) * | 2010-03-09 | 2013-08-13 | Cree, Inc. | High CRI lighting device with added long-wavelength blue color |
US8643038B2 (en) * | 2010-03-09 | 2014-02-04 | Cree, Inc. | Warm white LEDs having high color rendering index values and related luminophoric mediums |
US20110220920A1 (en) * | 2010-03-09 | 2011-09-15 | Brian Thomas Collins | Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices |
CN102792473B (zh) * | 2010-03-12 | 2015-11-25 | 株式会社东芝 | 白色照明装置 |
JP5749327B2 (ja) * | 2010-03-19 | 2015-07-15 | 日東電工株式会社 | 発光装置用ガーネット系蛍光体セラミックシート |
MX2013005202A (es) * | 2010-03-30 | 2013-11-20 | Changchn Inst Of Applied Chemistry Chinese Academy Of Sciences | Dispositivo de corriente alterna de led blanco. |
DE102010021341A1 (de) * | 2010-05-22 | 2011-11-24 | Merck Patent Gmbh | Leuchtstoffe |
JP2012060097A (ja) * | 2010-06-25 | 2012-03-22 | Mitsubishi Chemicals Corp | 白色半導体発光装置 |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
KR20170124614A (ko) * | 2010-08-04 | 2017-11-10 | 우베 고산 가부시키가이샤 | 규질화물 형광체용 질화규소 분말 그리고 그것을 이용한 CaAlSiN3계 형광체, Sr2Si5N8계 형광체, (Sr, Ca)AlSiN3계 형광체 및 La3Si6N11계 형광체, 및 그 제조 방법 |
CN102376860A (zh) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | 发光装置及其制造方法 |
US8733942B2 (en) * | 2010-08-09 | 2014-05-27 | Delta Electronics, Inc. | Illumination system and projector using the same |
KR101243773B1 (ko) * | 2010-08-17 | 2013-03-14 | 순천대학교 산학협력단 | 발광장치 및 태양전지용 파장변환조성물, 이 조성물을 포함하는 발광장치와 태양전지 및 이 파장변환조성물의 제조방법 |
CN101921592B (zh) * | 2010-09-09 | 2012-12-26 | 江苏博睿光电有限公司 | 一种白光led红色荧光粉及其制造方法 |
TWI393764B (zh) * | 2010-10-15 | 2013-04-21 | Chi Mei Corp | A phosphor and a light emitting device |
TWI393763B (zh) * | 2010-10-15 | 2013-04-21 | Chi Mei Corp | A phosphor and a light emitting device |
JP2012099282A (ja) * | 2010-10-29 | 2012-05-24 | Sharp Corp | 照明装置及び車両用前照灯 |
KR101235179B1 (ko) * | 2010-11-02 | 2013-02-20 | 주식회사 에클립스 | 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 led 소자 |
US8329484B2 (en) * | 2010-11-02 | 2012-12-11 | Tsmc Solid State Lighting Ltd. | Phosphor with Ce3+/Ce3+, Li+ doped luminescent materials |
CN108456516A (zh) * | 2010-11-09 | 2018-08-28 | 奇美实业股份有限公司 | 荧光体的制造方法 |
KR101087032B1 (ko) | 2010-11-12 | 2011-11-30 | 재단법인서울대학교산학협력재단 | Masn 형광체의 제조방법 |
US8343785B2 (en) * | 2010-11-30 | 2013-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitridosilicate phosphor tunable light-emitting diodes by using UV and blue chips |
WO2012075018A1 (en) | 2010-12-01 | 2012-06-07 | Nitto Denko Corporation | Emissive ceramic materials having a dopant concentration gradient and methods of making and using the same |
BR112013013485B1 (pt) * | 2010-12-01 | 2020-12-29 | Lumileds Holding B.V. | material ba1-x-y-zsrxcayeuz)2si5-a-balan8-a-4boa+4b, estrutura emissora de luz e sistema |
TWI447207B (zh) * | 2010-12-08 | 2014-08-01 | Univ Nat Chiao Tung | 螢光材料及使用其之發光裝置 |
JP5864851B2 (ja) | 2010-12-09 | 2016-02-17 | シャープ株式会社 | 発光装置 |
US9617469B2 (en) | 2011-01-06 | 2017-04-11 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles, making method, and light-emitting diode |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
FI122809B (fi) * | 2011-02-15 | 2012-07-13 | Marimils Oy | Valolähde ja valolähdenauha |
KR101215300B1 (ko) * | 2011-03-29 | 2012-12-26 | 순천대학교 산학협력단 | 산질화물계 형광체 |
US8716731B2 (en) * | 2011-04-11 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Tunable phosphor for luminescent |
EP2697837A4 (en) | 2011-04-11 | 2015-03-11 | Cree Inc | SOLID BODY LIGHTING DEVICE WITH A GREEN-SHIFTED RED COMPONENT |
CN102185059A (zh) * | 2011-04-12 | 2011-09-14 | 天津理工大学 | 一种可双向电压驱动无机量子点电致发光器件及制备方法 |
TWI505524B (zh) * | 2011-05-20 | 2015-10-21 | Au Optronics Corp | 有機電激發光光源 |
JP2012246462A (ja) | 2011-05-31 | 2012-12-13 | Sharp Corp | 発光装置 |
US8906263B2 (en) * | 2011-06-03 | 2014-12-09 | Cree, Inc. | Red nitride phosphors |
US8814621B2 (en) | 2011-06-03 | 2014-08-26 | Cree, Inc. | Methods of determining and making red nitride compositions |
EP3346512B1 (en) * | 2011-06-03 | 2023-06-07 | Citizen Electronics Co., Ltd. | Semiconductor light-emitting device, exhibit-irradiating illumination device, meat-irradiating illumination device, vegetable-irradiating illumination device, fresh fish-irradiating illumination device, general-purpose illumination device, and semiconductor light-emitting system |
US8747697B2 (en) * | 2011-06-07 | 2014-06-10 | Cree, Inc. | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
CN102842679A (zh) * | 2011-06-21 | 2012-12-26 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
DE102011078402A1 (de) * | 2011-06-30 | 2013-01-03 | Osram Ag | Konversionselement und Leuchtdiode mit einem solchen Konversionselement |
US20130016528A1 (en) * | 2011-07-11 | 2013-01-17 | Kevin Joseph Hathaway | Enhanced color gamut led backlighting unit |
KR20130014256A (ko) * | 2011-07-29 | 2013-02-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 이용한 조명 시스템 |
US20130062561A1 (en) * | 2011-09-09 | 2013-03-14 | Epistar Corporation | Phosphor and method of preparing the same |
DE202011106052U1 (de) | 2011-09-23 | 2011-11-09 | Osram Ag | Lichtquelle mit Leuchtstoff und zugehörige Beleuchtungseinheit. |
JP5872828B2 (ja) * | 2011-09-28 | 2016-03-01 | 株式会社小糸製作所 | 発光モジュールおよび蛍光体 |
CN104025322B (zh) * | 2011-10-24 | 2017-05-03 | 株式会社东芝 | 白光源和包括所述白光源的白光源系统 |
US8591072B2 (en) | 2011-11-16 | 2013-11-26 | Oree, Inc. | Illumination apparatus confining light by total internal reflection and methods of forming the same |
JP5899470B2 (ja) * | 2011-12-16 | 2016-04-06 | パナソニックIpマネジメント株式会社 | 照明装置 |
CN103184049B (zh) * | 2011-12-28 | 2015-01-14 | 湖南信多利新材料有限公司 | 一种氮化物荧光粉的制备方法及其设备 |
US8663502B2 (en) | 2011-12-30 | 2014-03-04 | Intematix Corporation | Red-emitting nitride-based phosphors |
KR101641378B1 (ko) | 2011-12-30 | 2016-07-20 | 인터매틱스 코포레이션 | 전하 평형을 위한 침입형 양이온을 갖는 질화물 인광체 |
JP5912580B2 (ja) * | 2012-01-27 | 2016-04-27 | デンカ株式会社 | 蛍光体、その製造方法及びその用途 |
US9318669B2 (en) | 2012-01-30 | 2016-04-19 | Cree, Inc. | Methods of determining and making red nitride compositions |
KR101650533B1 (ko) * | 2012-02-09 | 2016-08-23 | 덴카 주식회사 | 형광체 및 발광 장치 |
CN104508082A (zh) | 2012-03-06 | 2015-04-08 | 日东电工株式会社 | 用于发光装置的陶瓷体 |
CA2807615C (en) | 2012-03-08 | 2020-06-30 | Simplehuman, Llc | Vanity mirror |
TWI547208B (zh) * | 2012-03-19 | 2016-08-21 | 友達光電股份有限公司 | 有機電致發光裝置 |
US20130280520A1 (en) * | 2012-04-18 | 2013-10-24 | Nitto Denko Corporation | Phosphor ceramics and methods of making the same |
US9441155B2 (en) * | 2012-06-06 | 2016-09-13 | Sharp Kabushiki Kaisha | Wavelength converting member, light-emitting device, illuminating device, vehicle headlight, and method for producing wavelength converting member |
US9857519B2 (en) | 2012-07-03 | 2018-01-02 | Oree Advanced Illumination Solutions Ltd. | Planar remote phosphor illumination apparatus |
US8597545B1 (en) | 2012-07-18 | 2013-12-03 | Intematix Corporation | Red-emitting nitride-based calcium-stabilized phosphors |
KR20150035742A (ko) * | 2012-07-20 | 2015-04-07 | 미쓰비시 가가꾸 가부시키가이샤 | 발광 장치, 파장 변환 부재, 형광체 조성물 및 형광체 혼합물 |
DE102012106940A1 (de) * | 2012-07-30 | 2014-01-30 | Osram Gmbh | Verfahren zur Herstellung eines Leuchtstoffs, Leuchtstoff und optoelektronisches Bauelement |
KR101476000B1 (ko) * | 2012-08-03 | 2014-12-24 | 에스앤비인더스트리 주식회사 | 원예용 led조명장치의 led칩 제조방법 |
US9435915B1 (en) | 2012-09-28 | 2016-09-06 | Rockwell Collins, Inc. | Antiglare treatment for glass |
JP6068914B2 (ja) | 2012-10-09 | 2017-01-25 | デンカ株式会社 | 蛍光体の製造方法 |
US20140167601A1 (en) * | 2012-12-19 | 2014-06-19 | Cree, Inc. | Enhanced Luminous Flux Semiconductor Light Emitting Devices Including Red Phosphors that Exhibit Good Color Rendering Properties and Related Red Phosphors |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
CN102994079A (zh) * | 2012-12-21 | 2013-03-27 | 北京有色金属研究总院 | 氮氧化物橙-红色荧光物质,包括其的发光膜或发光片及发光器件 |
US9219202B2 (en) | 2013-04-19 | 2015-12-22 | Cree, Inc. | Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors |
KR102075989B1 (ko) | 2013-06-20 | 2020-02-11 | 삼성전자주식회사 | 적색 형광체, 백색 발광장치, 디스플레이 장치 및 조명장치 |
JP6195760B2 (ja) * | 2013-08-16 | 2017-09-13 | シチズン電子株式会社 | Led発光装置 |
JP2015041633A (ja) * | 2013-08-20 | 2015-03-02 | 船井電機株式会社 | 食品用照明装置および精肉用照明装置 |
USD737060S1 (en) | 2013-08-22 | 2015-08-25 | Simplehuman, Llc | Vanity mirror |
US10074781B2 (en) | 2013-08-29 | 2018-09-11 | Cree, Inc. | Semiconductor light emitting devices including multiple red phosphors that exhibit good color rendering properties with increased brightness |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
US9240528B2 (en) | 2013-10-03 | 2016-01-19 | Cree, Inc. | Solid state lighting apparatus with high scotopic/photopic (S/P) ratio |
US9356201B2 (en) | 2013-10-04 | 2016-05-31 | Bridgelux, Inc. | Die emitting white light |
JP2015082596A (ja) | 2013-10-23 | 2015-04-27 | 株式会社東芝 | 発光装置 |
USD736001S1 (en) | 2014-01-27 | 2015-08-11 | Simplehuman, Llc | Vanity mirror |
USD751829S1 (en) | 2014-03-13 | 2016-03-22 | Simplehuman, Llc | Vanity mirror |
KR102213650B1 (ko) * | 2014-04-18 | 2021-02-08 | 대주전자재료 주식회사 | 산질화물계 형광체 및 이를 이용한 백색 발광 장치 |
WO2015184614A1 (zh) * | 2014-06-05 | 2015-12-10 | 上海富迪照明电器有限公司 | 大功率高温白光led封装及其制作方法 |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
CN106574181B (zh) | 2014-08-07 | 2020-10-16 | 三菱化学株式会社 | 荧光体、发光装置、图像显示装置及照明装置 |
TWI645579B (zh) * | 2014-08-11 | 2018-12-21 | 佰鴻工業股份有限公司 | Light-emitting diode module with reduced blue light energy |
US9315725B2 (en) | 2014-08-28 | 2016-04-19 | Lightscape Materials, Inc. | Method of making EU2+ activated inorganic red phosphor |
US9200199B1 (en) | 2014-08-28 | 2015-12-01 | Lightscape Materials, Inc. | Inorganic red phosphor and lighting devices comprising same |
US9200198B1 (en) | 2014-08-28 | 2015-12-01 | Lightscape Materials, Inc. | Inorganic phosphor and light emitting devices comprising same |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
WO2016063965A1 (ja) * | 2014-10-23 | 2016-04-28 | 三菱化学株式会社 | 蛍光体、発光装置、照明装置及び画像表示装置 |
US20160149096A1 (en) * | 2014-11-24 | 2016-05-26 | Ledst Co., Ltd. | Prox reaction apparatus for fuel cell |
CA2922596C (en) | 2015-03-06 | 2023-10-24 | Simplehuman, Llc | Vanity mirror |
USD785345S1 (en) | 2015-03-06 | 2017-05-02 | Simplehuman, Llc | Mirror |
CN104698530A (zh) * | 2015-04-07 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种导光板、前置光源模组、显示模组和显示装置 |
JP6202154B2 (ja) * | 2015-08-28 | 2017-09-27 | 日亜化学工業株式会社 | 窒化物蛍光体及びその製造方法並びに発光装置 |
EP3135746B1 (en) | 2015-08-28 | 2019-05-29 | Nichia Corporation | Method for producing nitride fluorescent material |
JP6384468B2 (ja) * | 2015-12-22 | 2018-09-05 | 日亜化学工業株式会社 | 発光装置 |
US9882107B2 (en) * | 2016-01-12 | 2018-01-30 | Citizen Electronics Co., Ltd. | LED package with covered bonding wire |
DE212017000060U1 (de) * | 2016-02-03 | 2018-09-10 | Opple Lighting Co., Ltd. | Lichtquellenmodul und Beleuchtungsvorrichtung |
US10256374B2 (en) | 2016-03-04 | 2019-04-09 | Nichia Corporation | Light emitting device |
JP6447557B2 (ja) | 2016-03-24 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
KR102391847B1 (ko) * | 2016-06-30 | 2022-04-27 | 사카이 가가쿠 고교 가부시키가이샤 | 산화아연 형광체 및 그 제조 방법 |
JP6418208B2 (ja) * | 2016-08-24 | 2018-11-07 | 日亜化学工業株式会社 | 窒化物蛍光体及び発光装置 |
CN106322148B (zh) * | 2016-10-21 | 2023-06-06 | 四川省桑瑞光辉标识系统股份有限公司 | 一种led灯板调光系统和方法 |
JP2020012010A (ja) * | 2016-11-15 | 2020-01-23 | デンカ株式会社 | 赤色蛍光体及び発光装置 |
US10290779B2 (en) * | 2016-12-15 | 2019-05-14 | Panasonic Intellectual Property Management Co., Ltd. | Light emitting element |
KR102316099B1 (ko) * | 2017-03-03 | 2021-10-25 | 엘지전자 주식회사 | 디스플레이 디바이스 |
USD816350S1 (en) | 2017-03-17 | 2018-05-01 | Simplehuman, Llc | Vanity mirror |
US10869537B2 (en) | 2017-03-17 | 2020-12-22 | Simplehuman, Llc | Vanity mirror |
US10340426B2 (en) * | 2017-07-06 | 2019-07-02 | Epistar Corporation | Phosphor and illumination device utilizing the same |
TWI702362B (zh) * | 2017-07-13 | 2020-08-21 | 東貝光電科技股份有限公司 | Led發光裝置 |
DE102017121889B3 (de) * | 2017-09-21 | 2018-11-22 | Heraeus Noblelight Gmbh | Breitbandige halbleiterbasierte UV-Lichtquelle für eine Spektralanalysevorrichtung |
CN111201304A (zh) * | 2017-10-10 | 2020-05-26 | 电化株式会社 | 红色荧光体和发光装置 |
CN109837085B (zh) | 2017-11-27 | 2023-11-28 | 日亚化学工业株式会社 | 波长转换构件的制造方法、和波长转换构件 |
JP6923804B2 (ja) | 2017-12-08 | 2021-08-25 | 日亜化学工業株式会社 | 波長変換部材及びその製造方法 |
US10763414B2 (en) * | 2017-12-18 | 2020-09-01 | Rohm Co., Ltd. | Semiconductor light-emitting device |
USD848158S1 (en) | 2017-12-28 | 2019-05-14 | Simplehuman, Llc | Vanity mirror |
CA3033689A1 (en) | 2018-02-14 | 2019-08-14 | Simplehuman, Llc | Compact mirror |
KR20190101787A (ko) * | 2018-02-23 | 2019-09-02 | 서울반도체 주식회사 | 개선된 연색성을 갖는 led 조명 장치 및 led 필라멘트 |
USD846288S1 (en) | 2018-03-08 | 2019-04-23 | Simplehuman, Llc | Vanity mirror |
US11708031B2 (en) | 2018-03-22 | 2023-07-25 | Simplehuman, Llc | Voice-activated vanity mirror |
CN110342939A (zh) | 2018-04-06 | 2019-10-18 | 日亚化学工业株式会社 | 陶瓷复合体的制造方法、陶瓷复合体和发光装置 |
USD874161S1 (en) | 2018-09-07 | 2020-02-04 | Simplehuman, Llc | Vanity mirror |
USD950118S1 (en) | 2018-10-15 | 2022-04-26 | Aylo, Llc | Light |
US10935231B2 (en) | 2018-10-15 | 2021-03-02 | Aylo Llc | Systems and methods for a mirror mounted light with mobile device mounting |
USD925928S1 (en) | 2019-03-01 | 2021-07-27 | Simplehuman, Llc | Vanity mirror |
WO2020180627A1 (en) | 2019-03-01 | 2020-09-10 | Simplehuman, Llc | Vanity mirror |
WO2020186002A1 (en) * | 2019-03-13 | 2020-09-17 | Current Lighting Solutions, Llc | Horticulture lighting devices |
EP3950884B1 (en) * | 2019-04-03 | 2022-08-24 | National Institute for Materials Science | Phosphor, method for producing same and light emitting element |
USD927863S1 (en) | 2019-05-02 | 2021-08-17 | Simplehuman, Llc | Vanity mirror cover |
USD899226S1 (en) | 2019-09-09 | 2020-10-20 | Aylo Llc | Suction cup mount |
CN110635013A (zh) * | 2019-09-20 | 2019-12-31 | 深圳市长方集团股份有限公司 | 一种利用紫光激发的全光谱冷白led光源 |
JP7332881B2 (ja) * | 2019-09-30 | 2023-08-24 | 日亜化学工業株式会社 | 発光装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002011214A1 (de) * | 2000-07-28 | 2002-02-07 | Patent Treuhand Gesellschaft für elektrische Glühlampen mbH | Beleuchtungseinheit mit mindestens einer led als lichtquelle |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
KR19980046311A (ko) | 1996-12-12 | 1998-09-15 | 손욱 | 형광막 프로젝터 |
KR100702273B1 (ko) | 1998-09-28 | 2007-03-30 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 조명 시스템 |
US6429583B1 (en) | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
EP1104799A1 (en) | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
MXPA02010574A (es) * | 2000-05-04 | 2003-03-12 | Kimberly Clark Co | Composicion de polimero dispersable en agua sensible a la sal. |
DE10026435A1 (de) * | 2000-05-29 | 2002-04-18 | Osram Opto Semiconductors Gmbh | Kalzium-Magnesium-Chlorosilikat-Leuchtstoff und seine Anwendung bei Lumineszenz-Konversions-LED |
KR100784573B1 (ko) | 2000-05-29 | 2007-12-10 | 파텐트-트로이한트-게젤샤프트 퓌어 엘렉트리쉐 글뤼람펜 엠베하 | 발광다이오드에 기반을 둔 백색광을 방출하는 조명 기구 |
WO2002011173A1 (en) | 2000-07-28 | 2002-02-07 | Osram Opto Semiconductors Gmbh | Luminescence conversion based light emitting diode and phosphors for wavelength conversion |
JP4619509B2 (ja) | 2000-09-28 | 2011-01-26 | 株式会社東芝 | 発光装置 |
US6524542B2 (en) * | 2001-04-12 | 2003-02-25 | Millennium Cell, Inc. | Processes for synthesizing borohydride compounds |
AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
DE10105800B4 (de) | 2001-02-07 | 2017-08-31 | Osram Gmbh | Hocheffizienter Leuchtstoff und dessen Verwendung |
US6632379B2 (en) * | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
EP2017901A1 (en) * | 2001-09-03 | 2009-01-21 | Panasonic Corporation | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting DEV |
DE10146719A1 (de) * | 2001-09-20 | 2003-04-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10147040A1 (de) * | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
JP3985486B2 (ja) | 2001-10-01 | 2007-10-03 | 松下電器産業株式会社 | 半導体発光素子とこれを用いた発光装置 |
JP3993854B2 (ja) * | 2001-10-01 | 2007-10-17 | 松下電器産業株式会社 | 半導体発光素子とこれを用いた発光装置 |
JP2003321675A (ja) | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | 窒化物蛍光体及びその製造方法 |
JP4009828B2 (ja) * | 2002-03-22 | 2007-11-21 | 日亜化学工業株式会社 | 窒化物蛍光体及びその製造方法 |
AU2003221442A1 (en) * | 2002-03-22 | 2003-10-08 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
AU2003215785A1 (en) * | 2002-03-25 | 2003-10-08 | Philips Intellectual Property And Standards Gmbh | Tri-color white light led lamp |
US6809471B2 (en) | 2002-06-28 | 2004-10-26 | General Electric Company | Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same |
JP4407204B2 (ja) | 2002-08-30 | 2010-02-03 | 日亜化学工業株式会社 | 発光装置 |
EP1413619A1 (en) | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
EP1413618A1 (en) | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
US6717353B1 (en) | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
MY149573A (en) | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
JP4442101B2 (ja) | 2003-03-14 | 2010-03-31 | 日亜化学工業株式会社 | 酸窒化物蛍光体及びそれを用いた発光装置 |
KR20060134908A (ko) | 2003-08-29 | 2006-12-28 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 혼색 조명 시스템 |
JP3837588B2 (ja) * | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP3931239B2 (ja) | 2004-02-18 | 2007-06-13 | 独立行政法人物質・材料研究機構 | 発光素子及び照明器具 |
US7250715B2 (en) | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
JP4511849B2 (ja) * | 2004-02-27 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、光源、並びにled |
JP3921545B2 (ja) | 2004-03-12 | 2007-05-30 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法 |
JP4128564B2 (ja) | 2004-04-27 | 2008-07-30 | 松下電器産業株式会社 | 発光装置 |
US7391060B2 (en) | 2004-04-27 | 2008-06-24 | Matsushita Electric Industrial Co., Ltd. | Phosphor composition and method for producing the same, and light-emitting device using the same |
JP5226929B2 (ja) | 2004-06-30 | 2013-07-03 | 三菱化学株式会社 | 発光素子並びにそれを用いた照明装置、画像表示装置 |
JP4565141B2 (ja) | 2004-06-30 | 2010-10-20 | 独立行政法人物質・材料研究機構 | 蛍光体と発光器具 |
US7138756B2 (en) | 2004-08-02 | 2006-11-21 | Dowa Mining Co., Ltd. | Phosphor for electron beam excitation and color display device using the same |
JP4543250B2 (ja) * | 2004-08-27 | 2010-09-15 | Dowaエレクトロニクス株式会社 | 蛍光体混合物および発光装置 |
JP4543253B2 (ja) * | 2004-10-28 | 2010-09-15 | Dowaエレクトロニクス株式会社 | 蛍光体混合物および発光装置 |
US7671529B2 (en) | 2004-12-10 | 2010-03-02 | Philips Lumileds Lighting Company, Llc | Phosphor converted light emitting device |
KR101026307B1 (ko) * | 2006-05-05 | 2011-03-31 | 프리즘, 인코포레이티드 | 디스플레이 시스템 및 장치용 형광체 조성물 및 다른 형광 물질 |
JP4285580B1 (ja) | 2008-02-22 | 2009-06-24 | 三菱自動車工業株式会社 | 自動変速機の変速操作装置 |
-
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- 2005-04-26 US US11/568,149 patent/US7391060B2/en active Active
- 2005-04-26 KR KR1020067024124A patent/KR100777501B1/ko active IP Right Grant
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- 2009-06-16 US US12/485,627 patent/US7892453B2/en active Active
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- 2012-05-16 US US13/473,195 patent/US8419975B2/en active Active
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- 2013-03-18 US US13/845,976 patent/US8551362B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002011214A1 (de) * | 2000-07-28 | 2002-02-07 | Patent Treuhand Gesellschaft für elektrische Glühlampen mbH | Beleuchtungseinheit mit mindestens einer led als lichtquelle |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9087968B2 (en) | 2011-04-29 | 2015-07-21 | Samsung Electronics Co., Ltd. | White light emitting device, display apparatus and illumination apparatus |
JP2013007610A (ja) * | 2011-06-23 | 2013-01-10 | Canon Inc | 測色器及び画像形成装置 |
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