KR20080067010A - 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치 - Google Patents
형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치 Download PDFInfo
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Abstract
Description
Claims (13)
- 형광체를 포함하는 형광체층과 발광소자를 구비하고, 상기 발광소자는 360nm 이상 500nm 미만의 파장 영역에 발광 피크를 가지고, 상기 형광체는 상기 발광소자가 발하는 광에 의해서 여기되어 발광하고, 상기 형광체가 발하는 발광 성분을 출력광으로서 적어도 포함하는 발광장치로서,상기 형광체는,Eu2 +으로 부활(付活)되고, 또한, 600nm 이상 660nm 미만의 파장 영역에 발광 피크를 갖는 질화물 형광체 또는 산질화물 형광체와,Eu2 +으로 부활되고, 또한, 500nm 이상 600nm 미만의 파장 영역에 발광 피크를 갖는 알칼리 토류금속 오르토규산염 형광체를 포함하고,상기 발광소자가 발하는 광 여기 하에서, 상기 형광체의 내부 양자 효율이 80% 이상인 것을 특징으로 하는 발광장치.
- 청구항 1에 있어서, 상기 출력광은 상기 발광소자가 발하는 발광 성분을 포함하는 발광장치.
- 청구항 1에 있어서, 상기 질화물 형광체는 조성식 (M1 - xEux)SiN2로 나타내는 형광체이고, 상기 M은 Mg, Ca, Sr, Ba 및 Zn에서 선택되는 적어도 1개의 원소이고, 상기 x는, 식 0.005≤x≤0.3을 만족하는 수치인 발광장치.
- 청구항 1에 있어서, 상기 질화물 형광체는 조성식 (M1 - xEux)2Si6N8로 나타내는 형광체이고, 상기 M은 Mg, Ca, Sr, Ba 및 Zn에서 선택되는 적어도 1개의 원소이고, 상기 x는, 식 0.005≤x≤0.3을 만족하는 수치인 발광장치.
- 청구항 1에 있어서, 상기 산질화물 형광체는 조성식 (M1 - xEux)2Si4AlON7로 나타내는 형광체이고, 상기 M은 Mg, Ca, Sr, Ba 및 Zn에서 선택되는 적어도 1개의 원소이고, 상기 x는, 식 0.005≤x≤0.3을 만족하는 수치인 발광장치.
- 청구항 3 내지 청구항 5 중 어느 한 항에 있어서, 상기 M의 주성분은 Sr 또는 Ca인 발광장치.
- 청구항 1에 있어서, 상기 형광체는 420nm 이상 500nm 미만의 파장 영역에 발광 피크를 가지는 발광소자가 발하는 광에 의해서 여기되어 발광하는 발광장치.
- 청구항 1에 있어서, 상기 출력광은 상관색 온도가 2000K 이상 8000K 이하인 백색계 광인 발광장치.
- 청구항 1에 있어서, 상기 형광체층은 Eu2 +으로 부활되고, 또한, 420nm 이상 500nm 미만의 파장 영역에 발광 피크를 가지는 청색 형광체를 더 포함하고, 상기 청색 형광체는, 상기 발광소자가 발하는 광에 의해서 여기되어 발광하는 발광장치.
- 청구항 9에 있어서, 상기 청색 형광체는 Eu2 +으로 부활되는 질화물 형광체 또는 산질화물 형광체, Eu2 +으로 부활되는 알칼리 토류금속 오르토규산염 형광체, Eu2 +으로 부활되는 알루민산염 형광체 및 Eu2 +으로 부활되는 할로인산염 형광체로부터 선택되는 적어도 1개의 형광체인 발광장치.
- 청구항 9에 있어서, 상기 청색 형광체는 360nm 이상 420nm 미만의 파장 영역에 발광 피크를 가지는 발광소자가 발하는 광에 의해서 여기되어 발광하는 발광장치.
- 청구항 9에 있어서, 상기 발광장치의 출력광은 상관색 온도가 2000K 이상 12000K 이하인 백색계 광인 발광장치.
- 청구항 9에 있어서, 상기 발광장치의 출력광은 R1∼R15의 특수 연색평가수의 수치가 각각 80 이상인 백색계 광인 발광장치.
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JPJP-P-2004-00194196 | 2004-06-30 | ||
JP2004194196 | 2004-06-30 | ||
JPJP-P-2004-00250739 | 2004-08-30 | ||
JP2004250739A JP2005336450A (ja) | 2004-04-27 | 2004-08-30 | 蛍光体組成物とその製造方法、並びにその蛍光体組成物を用いた発光装置 |
JPJP-P-2004-00363534 | 2004-12-15 | ||
JP2004363534A JP4128564B2 (ja) | 2004-04-27 | 2004-12-15 | 発光装置 |
PCT/JP2005/008395 WO2005103199A1 (en) | 2004-04-27 | 2005-04-26 | Phosphor composition and method for producing the same, and light-emitting device using the same |
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JP2013007610A (ja) * | 2011-06-23 | 2013-01-10 | Canon Inc | 測色器及び画像形成装置 |
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