JP6935985B2 - 原子スケールのａｌｄ（原子層堆積）プロセスとａｌｅ（原子層エッチング）プロセスとの統合 - Google Patents

原子スケールのａｌｄ（原子層堆積）プロセスとａｌｅ（原子層エッチング）プロセスとの統合 Download PDF

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JP6935985B2
JP6935985B2 JP2016002141A JP2016002141A JP6935985B2 JP 6935985 B2 JP6935985 B2 JP 6935985B2 JP 2016002141 A JP2016002141 A JP 2016002141A JP 2016002141 A JP2016002141 A JP 2016002141A JP 6935985 B2 JP6935985 B2 JP 6935985B2
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substrate
etching
deposition
chamber
gas
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JP2016131238A5 (enExample
JP2016131238A (ja
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ケレン・ジェイコブス・カナリク
ジェフリー・マークス
ハーミート・シン
サマンサ・タン
アレクサンダー・カバンスキー
ウェンビン・ヤン
テソン・キム
デニス・エム．・ハウスマン
トルステン・リル
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Lam Research Corp
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2016002141A 2015-01-12 2016-01-08 原子スケールのａｌｄ（原子層堆積）プロセスとａｌｅ（原子層エッチング）プロセスとの統合 Active JP6935985B2 (ja)

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US201562102463P 2015-01-12 2015-01-12
US62/102,463 2015-01-12
US14/696,254 US9576811B2 (en) 2015-01-12 2015-04-24 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US14/696,254 2015-04-24

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JP2016131238A JP2016131238A (ja) 2016-07-21
JP2016131238A5 JP2016131238A5 (enExample) 2019-03-28
JP6935985B2 true JP6935985B2 (ja) 2021-09-15

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US (5) US9576811B2 (enExample)
JP (1) JP6935985B2 (enExample)
KR (1) KR102570795B1 (enExample)
CN (3) CN105789027A (enExample)
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