JP5651486B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5651486B2
JP5651486B2 JP2011005534A JP2011005534A JP5651486B2 JP 5651486 B2 JP5651486 B2 JP 5651486B2 JP 2011005534 A JP2011005534 A JP 2011005534A JP 2011005534 A JP2011005534 A JP 2011005534A JP 5651486 B2 JP5651486 B2 JP 5651486B2
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JP
Japan
Prior art keywords
transistor
insulating layer
source
electrode
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011005534A
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English (en)
Japanese (ja)
Other versions
JP2011166132A (ja
JP2011166132A5 (enExample
Inventor
一馬 古谷
一馬 古谷
義紀 家田
義紀 家田
裕人 八窪
裕人 八窪
加藤　清
清 加藤
山崎　舜平
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority to JP2011005534A priority Critical patent/JP5651486B2/ja
Publication of JP2011166132A publication Critical patent/JP2011166132A/ja
Publication of JP2011166132A5 publication Critical patent/JP2011166132A5/ja
Application granted granted Critical
Publication of JP5651486B2 publication Critical patent/JP5651486B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Vapour Deposition (AREA)
JP2011005534A 2010-01-15 2011-01-14 半導体装置 Expired - Fee Related JP5651486B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011005534A JP5651486B2 (ja) 2010-01-15 2011-01-14 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010007495 2010-01-15
JP2010007495 2010-01-15
JP2011005534A JP5651486B2 (ja) 2010-01-15 2011-01-14 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014232394A Division JP5889996B2 (ja) 2010-01-15 2014-11-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2011166132A JP2011166132A (ja) 2011-08-25
JP2011166132A5 JP2011166132A5 (enExample) 2014-02-13
JP5651486B2 true JP5651486B2 (ja) 2015-01-14

Family

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JP2011005534A Expired - Fee Related JP5651486B2 (ja) 2010-01-15 2011-01-14 半導体装置
JP2014232394A Expired - Fee Related JP5889996B2 (ja) 2010-01-15 2014-11-17 半導体装置
JP2016027585A Withdrawn JP2016129237A (ja) 2010-01-15 2016-02-17 半導体装置
JP2017094337A Active JP6348205B2 (ja) 2010-01-15 2017-05-11 半導体装置
JP2018102968A Active JP6577629B2 (ja) 2010-01-15 2018-05-30 半導体装置
JP2019151874A Withdrawn JP2020010046A (ja) 2010-01-15 2019-08-22 半導体装置
JP2021104660A Active JP7185731B2 (ja) 2010-01-15 2021-06-24 半導体装置
JP2022187942A Active JP7476287B2 (ja) 2010-01-15 2022-11-25 半導体装置
JP2024066531A Active JP7637291B2 (ja) 2010-01-15 2024-04-17 半導体装置
JP2025022045A Active JP7773665B2 (ja) 2010-01-15 2025-02-14 半導体装置

Family Applications After (9)

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JP2014232394A Expired - Fee Related JP5889996B2 (ja) 2010-01-15 2014-11-17 半導体装置
JP2016027585A Withdrawn JP2016129237A (ja) 2010-01-15 2016-02-17 半導体装置
JP2017094337A Active JP6348205B2 (ja) 2010-01-15 2017-05-11 半導体装置
JP2018102968A Active JP6577629B2 (ja) 2010-01-15 2018-05-30 半導体装置
JP2019151874A Withdrawn JP2020010046A (ja) 2010-01-15 2019-08-22 半導体装置
JP2021104660A Active JP7185731B2 (ja) 2010-01-15 2021-06-24 半導体装置
JP2022187942A Active JP7476287B2 (ja) 2010-01-15 2022-11-25 半導体装置
JP2024066531A Active JP7637291B2 (ja) 2010-01-15 2024-04-17 半導体装置
JP2025022045A Active JP7773665B2 (ja) 2010-01-15 2025-02-14 半導体装置

Country Status (3)

Country Link
US (2) US8780629B2 (enExample)
JP (10) JP5651486B2 (enExample)
TW (2) TWI576844B (enExample)

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JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
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JP6013685B2 (ja) * 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
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KR102472875B1 (ko) 2013-12-26 2022-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
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JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
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