JP5542260B2 - 半導体装置及びモジュール - Google Patents
半導体装置及びモジュール Download PDFInfo
- Publication number
- JP5542260B2 JP5542260B2 JP2011212278A JP2011212278A JP5542260B2 JP 5542260 B2 JP5542260 B2 JP 5542260B2 JP 2011212278 A JP2011212278 A JP 2011212278A JP 2011212278 A JP2011212278 A JP 2011212278A JP 5542260 B2 JP5542260 B2 JP 5542260B2
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Landscapes
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- Electrodes Of Semiconductors (AREA)
Description
およびソースとドレインとの間にかかる電圧(VD−VS)が変化することはない。従って、EL素子1903に安定した電流を供給することができる。
また金属膜としてはアルミニウム膜、銅薄膜もしくは銀薄膜が好ましい。その他にもビスマス膜を用いることもできる。
に示す。図3(A)において、301、302はどちらもE型NTFTである。
また、図3(B)において、303はE型NTFT、304はデプレーション型のnチャネル型TFT(以下、D型NTFTという)である。
が入力される。また、404で示される記号はインバータ回路であり、図4(B)に示すように、図3(A)に示したEEMOS回路もしくは図3(B)に示したEDMOS回路が用いられる。
これらは後にTFTの活性層となる半導体膜である。
を用いたエッチング方法を採用する。
また、他の酸化物導電膜として、酸化インジウム、酸化亜鉛、酸化スズ、もしくはそれらを組み合わせた化合物からなる酸化物導電膜を用いることも可能である。こうして画素電極(陰極)563、EL層565および陽極566を含むEL素子567が形成される。
であり、本体2301、記録媒体(CD、LDまたはDVD等)2302、操作スイッチ2303、表示部(a)2304、表示部(b)2305を含む。表示部(a)は主として画像情報を表示し、表示部(b)は主として文字情報を表示するが、本発明の発光装置もしくは液晶表示装置はこれら表示部(a)、(b)
に用いることができる。なお、記録媒体を備えた画像再生装置には、CD再生装置、ゲーム機器なども含まれうる。
また、外部の明るさ(照度)を読みとり、設定されたコントラストで情報表示が可能となるように発光させることもできる。
Claims (5)
- 画素部と、
前記画素部に電気的に接続された周辺回路部と、を有し、
前記画素部が有する半導体素子と、前記周辺回路部が有する半導体素子とは、全てnチャネル型の半導体を有し、
前記画素部が有する半導体素子は、全てエンハンスメント型であることを特徴とする半導体装置。 - 画素部と、
前記画素部に電気的に接続された周辺回路部と、を有し、
前記画素部は、第1のトランジスタと、第2のトランジスタと、発光素子と、を有し、
前記第1のトランジスタは、ビデオ信号の入力を切り替える機能を有し、
前記第2のトランジスタは、前記発光素子に流れる電流量を制御する機能を有し、
前記第1のトランジスタと、前記第2のトランジスタと、前記周辺回路部が有する半導体素子とは、全てnチャネル型の半導体を有し、
前記第1のトランジスタと前記第2のトランジスタとは、全てエンハンスメント型であることを特徴とする半導体装置。 - 第1の基板と、
第2の基板と、
第1のシール材と、
第2のシール材と、
前記第1の基板上の、画素部及び周辺回路部と、を有し、
前記第1のシール材は、前記第1の基板と前記第2の基板との間に設けられた部分を有し、
前記第2のシール材は、前記第1の基板の側面に設けられた部分と、前記第2の基板の側面に設けられた部分とを、有し、
前記画素部が有する半導体素子と、前記周辺回路部が有する半導体素子とは、全てnチャネル型の半導体を有し、
前記画素部が有する半導体素子は、全てエンハンスメント型であることを特徴とする半導体装置。 - 第1の基板と、
第2の基板と、
第1のシール材と、
第2のシール材と、
前記第1の基板上の、画素部及び周辺回路部と、を有し、
前記第1のシール材は、前記第1の基板と前記第2の基板との間に設けられた部分を有し、
前記第2のシール材は、前記第1の基板の側面に設けられた部分と、前記第2の基板の側面に設けられた部分とを、有し、
前記画素部は、第1のトランジスタと、第2のトランジスタと、発光素子と、を有し、
前記第1のトランジスタは、ビデオ信号の入力を切り替える機能を有し、
前記第2のトランジスタは、前記発光素子に流れる電流量を制御する機能を有し、
前記第1のトランジスタと、前記第2のトランジスタと、前記周辺回路部が有する半導体素子とは、全てnチャネル型の半導体を有し、
前記第1のトランジスタと前記第2のトランジスタとは、全てエンハンスメント型であることを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項に記載の半導体装置と、FPCと、を有することを特徴とするモジュール。
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JP2015096955A (ja) * | 2000-05-12 | 2015-05-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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JP2017040935A (ja) | 2017-02-23 |
US8284138B2 (en) | 2012-10-09 |
JP2015092247A (ja) | 2015-05-14 |
US20100085283A1 (en) | 2010-04-08 |
JP2019061256A (ja) | 2019-04-18 |
JP2015035609A (ja) | 2015-02-19 |
JP2012053471A (ja) | 2012-03-15 |
US20130087796A1 (en) | 2013-04-11 |
JP2017161905A (ja) | 2017-09-14 |
US8669925B2 (en) | 2014-03-11 |
JP2014067050A (ja) | 2014-04-17 |
JP2016053720A (ja) | 2016-04-14 |
KR100707883B1 (ko) | 2007-04-16 |
JP5651761B2 (ja) | 2015-01-14 |
US20020044111A1 (en) | 2002-04-18 |
JP2015096955A (ja) | 2015-05-21 |
US7633471B2 (en) | 2009-12-15 |
KR20010104294A (ko) | 2001-11-24 |
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