JP5361292B2 - 浮遊ゲート、制御ゲート、選択ゲート、及び浮遊ゲートの上にオーバーハングをもつ消去ゲートを有する、改善されたスプリット・ゲート型不揮発性フラッシュメモリ・セル、アレイ、及び製造方法 - Google Patents
浮遊ゲート、制御ゲート、選択ゲート、及び浮遊ゲートの上にオーバーハングをもつ消去ゲートを有する、改善されたスプリット・ゲート型不揮発性フラッシュメモリ・セル、アレイ、及び製造方法 Download PDFInfo
- Publication number
- JP5361292B2 JP5361292B2 JP2008225276A JP2008225276A JP5361292B2 JP 5361292 B2 JP5361292 B2 JP 5361292B2 JP 2008225276 A JP2008225276 A JP 2008225276A JP 2008225276 A JP2008225276 A JP 2008225276A JP 5361292 B2 JP5361292 B2 JP 5361292B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- region
- erase
- floating gate
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title description 56
- 238000004519 manufacturing process Methods 0.000 title description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 72
- 235000012239 silicon dioxide Nutrition 0.000 claims description 36
- 239000000377 silicon dioxide Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 5
- 230000005641 tunneling Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 4
- 230000008569 process Effects 0.000 description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 29
- 229920005591 polysilicon Polymers 0.000 description 29
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 125000006850 spacer group Chemical group 0.000 description 15
- 239000012212 insulator Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000002784 hot electron Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Description
これまで、従来技術では、特定の制限内での浮遊ゲートに対する消去ゲートのオーバーハングが消去の効率を高めることを教示又は開示することができなかった。
本発明はまた、前述のメモリ・セルのアレイにも関する。
Verase=(FTV+QFG/Ctotal)/(1−CR)である。Ctotalは、浮遊ゲート22と全ての周囲ノードとの間の全静電容量である。CRは、消去ゲート24と浮遊ゲート22との間の結合比である。CR=CEG-FG/Ctotalであり、ここで、CEG-FGは、消去ゲート24と浮遊ゲート22との間の静電容量である。QFGは、「1」の状態に対応する浮遊ゲートにかかる実効電荷である。FTVは、セルを「1」の状態まで消去するために必要とされる、消去ゲート24と浮遊ゲート22との間の電圧差である。「EGオーバーハング」が「Tox」より著しく小さいときは、浮遊ゲート22のコーナー部に隣接するトンネル酸化物内の電子トンネリング障壁が、すぐ隣の結合ゲート26の低い電位に電気的に露出されて、FTVの増加をもたらし、Veraseの増加をもたらす。「EGオーバーハング」が「Tox」より著しく大きいときは、CRが増加し、このことが、Veraseも増加させる。図2に示されるように、グラフ30は、「EGオーバーハング」/「Tox」がおよそ1.6であるときに、Veraseの最小値を示す。Veraseの要件が減少すると、電荷ポンプへの要件も同様に減少する。したがって、消去の効率が高まる。
消去中、−6から−9ボルトのオーダーの負の電圧を選択制御ゲート26に印加することができる。その場合、選択消去ゲート24に印加される電圧をおよそ7−9ボルトまで下げることができる。消去ゲート24の「オーバーハング」は、選択制御ゲート26に印加された負の電圧からトンネリング障壁を遮断する。
プログラミング中、浮遊ゲートの下のチャネル部分が反転した状態で、有効なホット電子注入によって選択されたセルをプログラムする。ホット電子を生成するために、3−6ボルトの中電圧を選択SLに印加する。選択制御ゲート26及び選択消去ゲート24に、高電圧(6−9ボルト)までバイアスをかけ、高い結合比を利用し、浮遊ゲートへの電圧結合を最大にする。浮遊ゲートに結合された高圧が、FGチャネルの反転を引き起こし、スプリット・エリアにおいて横方向の場を集め、ホット電子をより効率的に生成する。さらに、電圧は、高い垂直方向場を提供して、ホット電子を浮遊ゲート内に引き付け、注入エネルギー障壁を減少させる。
各々が浮遊ゲートに結合されるので、読み取り中、プログラム動作と読み取り動作との間のバランスに応じて、選択制御ゲート26及び選択消去ゲート24にかかる電圧を平衡させることができる。したがって、最適なウィンドウを達成するために、選択制御ゲート26及び選択消去ゲート24の各々に印加される電圧は、0Vから3.7Vまでの範囲にある電圧の組み合わせとすることができる。さらに、RC結合のために、選択制御ゲートにかかる電圧は好ましいものではないので、選択消去ゲート24にかかる電圧は、より迅速な読み取り動作をもたらすことができる。
12:基板
14:第1の領域
16:第2の領域
18:チャネル領域
20:選択ゲート
22:浮遊ゲート
24:消去ゲート
26:制御ゲート
40:二酸化シリコン層
42、46、60:ポリシリコン層
44:絶縁層
48:複合層
49:二酸化シリコン
50:窒化シリコン
51、52、54、62:スペーサ
56:薄い二酸化シリコン層
70:ビット線
72:ビット線コンタクト
S1、S2:スタック
Claims (11)
- 第1の導電型の実質的に単結晶材料の基板であって、第2の導電型の第1の領域と、前記第1の領域から離間して配置されていて、前記第1の領域との間にチャネル領域を形成している第2の導電型の第2の領域とを有する、前記基板と、
前記第1の領域に隣接している前記チャネル領域の第1の部分から絶縁され且つ離間して配置された選択ゲートと、
前記チャネル領域の第2の部分から絶縁され且つ離間して配置された浮遊ゲートであって、前記選択ゲートに最も近い第1の端部と、前記選択ゲートから最も離れた第2の端部とを有し、上面とこれと反対側の底面とを有し、前記底面が前記チャネル領域と対面しており、前記上面上であり且つ前記第2の端部に先端部を有している、前記浮遊ゲート、
前記先端部を被っており、消去動作中に、電荷が通過することが許されるトンネリング障壁、
上面とこれと反対側の底面とを有している制御ゲートであって、前記制御ゲートの前記底面が前記浮遊ゲートの前記上面から絶縁されており、前記制御ゲートが前記選択ゲートから絶縁され且つ前記選択ゲートに隣接しており、前記制御ゲートが、前記選択ゲートに最も近い第1の端部と、前記選択ゲートから最も離れた第2の端部とを有し、前記制御ゲートの前記第2の端部は、前記浮遊ゲートの第2の端部よりも、前記浮遊ゲートの前記第1の端部に整列された垂直線により近く、前記浮遊ゲートの前記上面の一部は前記制御ゲートの前記底面には対面していない、前記制御ゲート、及び
前記基板の前記第2の領域から絶縁されており且つ離間して設置されている第1の部分と、前記第1の部分に電気的に接続された第2の部分とを有する消去ゲート、を有し、
前記消去ゲートの第2の部分は前記浮遊ゲート上にあって且つ前記浮遊ゲートから絶縁されており、前記消去ゲートの第2の部分は前記制御ゲートに隣接しており、前記消去ゲートの前記第2の部分が、前記トンネリング障壁を前記制御ゲートから遮断しており、前記消去ゲートの前記第2の部分が、前記第1の領域から前記第2の領域への方向に実質的に直角な方向で測定した第1の長さだけ、前記浮遊ゲートから離間されており、前記消去ゲートの前記第2の部分が、前記制御ゲートの前記第2の端部に最も近い第2の端部を有しており、前記浮遊ゲートの上面に沿って延びる平面において、前記第1の領域から前記第2の領域への方向に実質的に平行な方向で測定された、前記消去ゲートの前記第2の部分の前記第2の端部から前記消去ゲートの前記第1の部分の前記第1の端部と整列する垂直線までの第2の長さを、前記消去ゲートの前記第2の部分が有し、
前記第1の長さに対する前記第2の長さの比が、およそ1.0から2.5までの間である、不揮発性メモリセル。 - 前記消去ゲートの前記2つの部分はモノリシックに形成されることを特徴とする、請求項1に記載のセル。
- 前記消去ゲートの前記2つの部分は、互いに電気的に接続された2つの別個の部分であることを特徴とする、請求項1に記載のセル。
- 前記浮遊ゲートは、前記消去ゲートの前記第1の部分に最も近い該浮遊ゲートの前記第2の端部にある、鋭利なコーナー部を有することを特徴とする、請求項2に記載のセル。
- 前記コーナー部は、消去動作中、前記浮遊ゲートから前記消去ゲートへの電子の流れを容易にすることを特徴とする、請求項4に記載のセル。
- 前記浮遊ゲートは、前記第2の領域の部分から絶縁され、離間配置されることを特徴とする、請求項2に記載のセル。
- 前記選択ゲートを絶縁し、離間配置する、前記チャネル領域の前記第1の部分は、前記第1の領域に当接することを特徴とする、請求項6に記載のセル。
- 前記選択ゲートは、複合絶縁材料によって前記浮遊ゲートの前記第1の端部から分離されることを特徴とする、請求項2に記載のセル。
- 前記複合絶縁材料は、二酸化シリコン及び窒化シリコンであることを特徴とする、請求項8に記載のセル。
- 前記選択ゲートは、均一な絶縁材料によって前記浮遊ゲートの前記第1の端部から分離されることを特徴とする、請求項2に記載のセル。
- 前記均一な絶縁材料は、二酸化シリコンであることを特徴とする、請求項10に記載のセル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/834,574 | 2007-08-06 | ||
US11/834,574 US20090039410A1 (en) | 2007-08-06 | 2007-08-06 | Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009044164A JP2009044164A (ja) | 2009-02-26 |
JP5361292B2 true JP5361292B2 (ja) | 2013-12-04 |
Family
ID=40345645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008225276A Active JP5361292B2 (ja) | 2007-08-06 | 2008-08-06 | 浮遊ゲート、制御ゲート、選択ゲート、及び浮遊ゲートの上にオーバーハングをもつ消去ゲートを有する、改善されたスプリット・ゲート型不揮発性フラッシュメモリ・セル、アレイ、及び製造方法 |
Country Status (5)
Country | Link |
---|---|
US (4) | US20090039410A1 (ja) |
JP (1) | JP5361292B2 (ja) |
KR (1) | KR20090014967A (ja) |
CN (3) | CN102403274A (ja) |
TW (1) | TWI393263B (ja) |
Families Citing this family (193)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
JP5503843B2 (ja) * | 2007-12-27 | 2014-05-28 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
US20090267130A1 (en) * | 2008-04-28 | 2009-10-29 | International Business Machines Corporation | Structure and process integration for flash storage element and dual conductor complementary mosfets |
CN101882576B (zh) * | 2009-05-06 | 2012-03-14 | 中芯国际集成电路制造(北京)有限公司 | 提高浮栅擦除效率的方法 |
US8445953B2 (en) | 2009-07-08 | 2013-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure for flash memory cells |
US8470670B2 (en) * | 2009-09-23 | 2013-06-25 | Infineon Technologies Ag | Method for making semiconductor device |
CN102097384B (zh) * | 2009-12-15 | 2013-05-29 | 中芯国际集成电路制造(上海)有限公司 | 存储器件制造方法 |
CN102104044B (zh) * | 2009-12-17 | 2013-02-27 | 中芯国际集成电路制造(上海)有限公司 | 分离栅快闪存储器及其制造方法 |
CN102263064A (zh) * | 2010-05-28 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | 分立栅存储器件的形成方法 |
CN102386141B (zh) * | 2010-08-27 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | 一种防止分离栅闪存中堆叠栅极线倒塌的方法 |
CN102543885A (zh) * | 2010-12-31 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | 分立栅存储器件及其形成方法 |
CN102610575A (zh) * | 2011-01-21 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | 制作分离栅极式快闪存储器单元的方法 |
KR101787488B1 (ko) | 2011-03-24 | 2017-10-19 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 이의 제조 방법 |
US8384147B2 (en) * | 2011-04-29 | 2013-02-26 | Silicon Storage Technology, Inc. | High endurance non-volatile memory cell and array |
US8711636B2 (en) | 2011-05-13 | 2014-04-29 | Silicon Storage Technology, Inc. | Method of operating a split gate flash memory cell with coupling gate |
CN102956562B (zh) * | 2011-08-22 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 存储器件的形成方法 |
CN102956643A (zh) * | 2011-08-24 | 2013-03-06 | 硅存储技术公司 | 制造非易失浮栅存储单元的方法和由此制造的存储单元 |
CN102969346B (zh) * | 2011-08-31 | 2016-08-10 | 硅存储技术公司 | 具有带改进耦合比的浮栅和耦合栅的非易失性存储器单元 |
CN102299157B (zh) * | 2011-09-01 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | 分栅式闪存及其制造方法 |
CN102270608B (zh) * | 2011-09-01 | 2016-12-28 | 上海华虹宏力半导体制造有限公司 | 分栅式闪存制造方法 |
US8488388B2 (en) * | 2011-11-01 | 2013-07-16 | Silicon Storage Technology, Inc. | Method of programming a split gate non-volatile floating gate memory cell having a separate erase gate |
US8513728B2 (en) * | 2011-11-17 | 2013-08-20 | Silicon Storage Technology, Inc. | Array of split gate non-volatile floating gate memory cells having improved strapping of the coupling gates |
US8804429B2 (en) | 2011-12-08 | 2014-08-12 | Silicon Storage Technology, Inc. | Non-volatile memory device and a method of programming such device |
CN103178018A (zh) * | 2011-12-22 | 2013-06-26 | 中芯国际集成电路制造(上海)有限公司 | 分离栅快闪存储单元制造方法 |
US9330922B2 (en) | 2012-03-07 | 2016-05-03 | Silicon Storage Technology, Inc. | Self-aligned stack gate structure for use in a non-volatile memory array and a method of forming such structure |
US8811093B2 (en) | 2012-03-13 | 2014-08-19 | Silicon Storage Technology, Inc. | Non-volatile memory device and a method of operating same |
US8878281B2 (en) | 2012-05-23 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for non-volatile memory cells |
US8890230B2 (en) | 2012-07-15 | 2014-11-18 | United Microelectronics Corp. | Semiconductor device |
US8785307B2 (en) * | 2012-08-23 | 2014-07-22 | Silicon Storage Technology, Inc. | Method of forming a memory cell by reducing diffusion of dopants under a gate |
US9466732B2 (en) * | 2012-08-23 | 2016-10-11 | Silicon Storage Technology, Inc. | Split-gate memory cell with depletion-mode floating gate channel, and method of making same |
JP5936959B2 (ja) * | 2012-09-04 | 2016-06-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9018690B2 (en) * | 2012-09-28 | 2015-04-28 | Silicon Storage Technology, Inc. | Split-gate memory cell with substrate stressor region, and method of making same |
CN103715144B (zh) * | 2012-09-29 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | 分立栅存储器件及其形成方法 |
US9123401B2 (en) | 2012-10-15 | 2015-09-01 | Silicon Storage Technology, Inc. | Non-volatile memory array and method of using same for fractional word programming |
US8669607B1 (en) * | 2012-11-01 | 2014-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for non-volatile memory cells with increased programming efficiency |
JP6114534B2 (ja) | 2012-11-07 | 2017-04-12 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US9472284B2 (en) | 2012-11-19 | 2016-10-18 | Silicon Storage Technology, Inc. | Three-dimensional flash memory system |
CN102983139B (zh) * | 2012-11-30 | 2017-09-29 | 上海华虹宏力半导体制造有限公司 | 半导体存储器 |
US8946807B2 (en) | 2013-01-24 | 2015-02-03 | Micron Technology, Inc. | 3D memory |
US9293359B2 (en) | 2013-03-14 | 2016-03-22 | Silicon Storage Technology, Inc. | Non-volatile memory cells with enhanced channel region effective width, and method of making same |
KR101716998B1 (ko) | 2013-03-14 | 2017-03-15 | 실리콘 스토리지 테크놀로지 인크 | 비휘발성 메모리 프로그램 알고리즘 디바이스 및 방법 |
US9275748B2 (en) * | 2013-03-14 | 2016-03-01 | Silicon Storage Technology, Inc. | Low leakage, low threshold voltage, split-gate flash cell operation |
US9184175B2 (en) | 2013-03-15 | 2015-11-10 | Micron Technology, Inc. | Floating gate memory cells in vertical memory |
US8867281B2 (en) | 2013-03-15 | 2014-10-21 | Silicon Storage Technology, Inc. | Hybrid chargepump and regulation means and method for flash memory device |
US9064970B2 (en) | 2013-03-15 | 2015-06-23 | Micron Technology, Inc. | Memory including blocking dielectric in etch stop tier |
US9276011B2 (en) | 2013-03-15 | 2016-03-01 | Micron Technology, Inc. | Cell pillar structures and integrated flows |
CN104157614A (zh) * | 2013-05-14 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | 分离栅式快闪存储器的制造方法 |
US9484261B2 (en) | 2013-07-05 | 2016-11-01 | Silicon Storage Technology, Inc. | Formation of self-aligned source for split-gate non-volatile memory cell |
US9431256B2 (en) * | 2013-07-11 | 2016-08-30 | United Microelectronics Corp. | Semiconductor device and manufacturing method thereof |
US9123822B2 (en) | 2013-08-02 | 2015-09-01 | Silicon Storage Technology, Inc. | Split gate non-volatile flash memory cell having a silicon-metal floating gate and method of making same |
US9048316B2 (en) * | 2013-08-29 | 2015-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Flash memory structure and method of forming the same |
US9437604B2 (en) | 2013-11-01 | 2016-09-06 | Micron Technology, Inc. | Methods and apparatuses having strings of memory cells including a metal source |
US20150155039A1 (en) | 2013-12-02 | 2015-06-04 | Silicon Storage Technology, Inc. | Three-Dimensional Flash NOR Memory System With Configurable Pins |
JP2015130438A (ja) | 2014-01-08 | 2015-07-16 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US9287282B2 (en) | 2014-01-28 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a logic compatible flash memory |
US20150249158A1 (en) * | 2014-03-03 | 2015-09-03 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US20150263040A1 (en) | 2014-03-17 | 2015-09-17 | Silicon Storage Technology, Inc. | Embedded Memory Device With Silicon-On-Insulator Substrate, And Method Of Making Same |
US9159842B1 (en) * | 2014-03-28 | 2015-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded nonvolatile memory |
JP6238235B2 (ja) | 2014-06-13 | 2017-11-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9614048B2 (en) * | 2014-06-17 | 2017-04-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Split gate flash memory structure and method of making the split gate flash memory structure |
US9691883B2 (en) * | 2014-06-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Asymmetric formation approach for a floating gate of a split gate flash memory structure |
US9252150B1 (en) | 2014-07-29 | 2016-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | High endurance non-volatile memory cell |
US9286982B2 (en) * | 2014-08-08 | 2016-03-15 | Silicon Storage Technology, Inc. | Flash memory system with EEPROM functionality |
US10312246B2 (en) | 2014-08-08 | 2019-06-04 | Silicon Storage Technology, Inc. | Split-gate flash memory cell with improved scaling using enhanced lateral control gate to floating gate coupling |
US9391085B2 (en) * | 2014-08-08 | 2016-07-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned split gate flash memory having liner-separated spacers above the memory gate |
US9660106B2 (en) * | 2014-08-18 | 2017-05-23 | United Microelectronics Corp. | Flash memory and method of manufacturing the same |
US9431407B2 (en) | 2014-09-19 | 2016-08-30 | Silicon Storage Technology, Inc. | Method of making embedded memory device with silicon-on-insulator substrate |
US10312248B2 (en) * | 2014-11-12 | 2019-06-04 | Silicon Storage Technology, Inc. | Virtual ground non-volatile memory array |
KR102240022B1 (ko) * | 2014-11-26 | 2021-04-15 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
US9276005B1 (en) * | 2014-12-04 | 2016-03-01 | Silicon Storage Technology, Inc. | Non-volatile memory array with concurrently formed low and high voltage logic devices |
US9379121B1 (en) | 2015-01-05 | 2016-06-28 | Silicon Storage Technology, Inc. | Split gate non-volatile flash memory cell having metal gates and method of making same |
US9276006B1 (en) | 2015-01-05 | 2016-03-01 | Silicon Storage Technology, Inc. | Split gate non-volatile flash memory cell having metal-enhanced gates and method of making same |
TWI594420B (zh) * | 2015-01-13 | 2017-08-01 | Xinnova Tech Ltd | Non-volatile memory components and methods of making the same |
US9361995B1 (en) * | 2015-01-21 | 2016-06-07 | Silicon Storage Technology, Inc. | Flash memory system using complementary voltage supplies |
CN107210203B (zh) | 2015-01-22 | 2020-10-16 | 硅存储技术公司 | 高密度分裂栅存储器单元 |
KR101998009B1 (ko) * | 2015-01-22 | 2019-07-08 | 실리콘 스토리지 테크놀로지 인크 | 저전압 및 고전압 로직 디바이스들과 함께 분리형 게이트 메모리 셀 어레이를 형성하는 방법 |
CN107210202B (zh) * | 2015-01-23 | 2018-11-09 | 硅存储技术公司 | 用金属栅和逻辑器件形成自对准分裂栅存储单元阵列的方法 |
US9721958B2 (en) | 2015-01-23 | 2017-08-01 | Silicon Storage Technology, Inc. | Method of forming self-aligned split-gate memory cell array with metal gates and logic devices |
TWI606551B (zh) * | 2015-02-16 | 2017-11-21 | Xinnova Tech Ltd | Non-volatile memory device method |
US9620216B2 (en) | 2015-02-17 | 2017-04-11 | Silicon Storage Technology, Inc. | Flash memory device configurable to provide read only memory functionality |
CN105990367B (zh) | 2015-02-27 | 2019-03-12 | 硅存储技术公司 | 具有rom单元的非易失性存储器单元阵列 |
US9793280B2 (en) | 2015-03-04 | 2017-10-17 | Silicon Storage Technology, Inc. | Integration of split gate flash memory array and logic devices |
US10134475B2 (en) | 2015-03-31 | 2018-11-20 | Silicon Storage Technology, Inc. | Method and apparatus for inhibiting the programming of unselected bitlines in a flash memory system |
CN106158027B (zh) | 2015-04-09 | 2020-02-07 | 硅存储技术公司 | 用于对分离栅式非易失性存储器单元编程的系统和方法 |
US9917165B2 (en) * | 2015-05-15 | 2018-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory cell structure for improving erase speed |
US9608000B2 (en) | 2015-05-27 | 2017-03-28 | Micron Technology, Inc. | Devices and methods including an etch stop protection material |
US9431406B1 (en) * | 2015-05-28 | 2016-08-30 | Macronix International Co., Ltd. | Semiconductor device and method of forming the same |
US9672930B2 (en) | 2015-05-29 | 2017-06-06 | Silicon Storage Technology, Inc. | Low power operation for flash memory system |
US9793279B2 (en) | 2015-07-10 | 2017-10-17 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cell having a floating gate, word line, erase gate, and method of manufacturing |
US9793281B2 (en) | 2015-07-21 | 2017-10-17 | Silicon Storage Technology, Inc. | Non-volatile split gate memory cells with integrated high K metal gate logic device and metal-free erase gate, and method of making same |
US9711513B2 (en) | 2015-08-14 | 2017-07-18 | Globalfoundries Inc. | Semiconductor structure including a nonvolatile memory cell and method for the formation thereof |
JP2017045755A (ja) | 2015-08-24 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6568751B2 (ja) | 2015-08-28 | 2019-08-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN106531212B (zh) | 2015-09-11 | 2020-02-07 | 硅存储技术公司 | 将存储器单元用作源极线下拉电路的闪速存储器系统 |
US9634019B1 (en) * | 2015-10-01 | 2017-04-25 | Silicon Storage Technology, Inc. | Non-volatile split gate memory cells with integrated high K metal gate, and method of making same |
US9634020B1 (en) * | 2015-10-07 | 2017-04-25 | Silicon Storage Technology, Inc. | Method of making embedded memory device with silicon-on-insulator substrate |
US9673208B2 (en) | 2015-10-12 | 2017-06-06 | Silicon Storage Technology, Inc. | Method of forming memory array and logic devices |
US10141321B2 (en) * | 2015-10-21 | 2018-11-27 | Silicon Storage Technology, Inc. | Method of forming flash memory with separate wordline and erase gates |
EP3371829B1 (en) | 2015-11-03 | 2020-11-25 | Silicon Storage Technology, Inc. | Integration of split gate non-volatile flash memory with finfet logic |
CN108292516A (zh) * | 2015-11-03 | 2018-07-17 | 硅存储技术公司 | 金属浮栅在非易失性存储器中的集成 |
US9960176B2 (en) | 2015-11-05 | 2018-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Nitride-free spacer or oxide spacer for embedded flash memory |
US9548312B1 (en) | 2015-11-10 | 2017-01-17 | Globalfoundries Inc. | Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure including a nonvolatile memory cell |
US9583640B1 (en) * | 2015-12-29 | 2017-02-28 | Globalfoundries Inc. | Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure |
US9673210B1 (en) | 2016-02-25 | 2017-06-06 | Globalfoundries Inc. | Semiconductor structure including a nonvolatile memory cell having a charge trapping layer and method for the formation thereof |
CN107293546B (zh) | 2016-04-08 | 2020-09-04 | 硅存储技术公司 | 减小型分裂栅非易失性闪存单元及其制造方法 |
CN107305892B (zh) * | 2016-04-20 | 2020-10-02 | 硅存储技术公司 | 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法 |
CN107316868B (zh) * | 2016-04-22 | 2020-04-07 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
CN107342288B (zh) * | 2016-04-29 | 2020-08-04 | 硅存储技术公司 | 分裂栅型双位非易失性存储器单元 |
US9922986B2 (en) | 2016-05-16 | 2018-03-20 | Globalfoundries Inc. | Semiconductor structure including a plurality of pairs of nonvolatile memory cells and an edge cell and method for the formation thereof |
KR20190002708A (ko) * | 2016-05-17 | 2019-01-08 | 실리콘 스토리지 테크놀로지 인크 | 개별 메모리 셀 판독, 프로그래밍, 및 소거를 갖는 3-게이트 플래시 메모리 셀들의 어레이 |
US10269440B2 (en) | 2016-05-17 | 2019-04-23 | Silicon Storage Technology, Inc. | Flash memory array with individual memory cell read, program and erase |
WO2017200883A1 (en) | 2016-05-17 | 2017-11-23 | Silicon Storage Technology, Inc. | Deep learning neural network classifier using non-volatile memory array |
WO2017200709A1 (en) * | 2016-05-18 | 2017-11-23 | Silicon Storage Technology, Inc. | Method of making split gate non-volatile flash memory cell |
US9953719B2 (en) | 2016-05-18 | 2018-04-24 | Silicon Storage Technology, Inc. | Flash memory cell and associated decoders |
CN107425003B (zh) | 2016-05-18 | 2020-07-14 | 硅存储技术公司 | 制造分裂栅非易失性闪存单元的方法 |
US9911501B2 (en) | 2016-05-24 | 2018-03-06 | Silicon Storage Technology, Inc. | Sensing amplifier comprising a built-in sensing offset for flash memory devices |
US9972493B2 (en) * | 2016-08-08 | 2018-05-15 | Silicon Storage Technology, Inc. | Method of forming low height split gate memory cells |
US9997524B2 (en) * | 2016-08-24 | 2018-06-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory device and manufacturing method thereof |
TWI708373B (zh) * | 2016-10-11 | 2020-10-21 | 聯華電子股份有限公司 | 快閃記憶體結構 |
US10510544B2 (en) | 2016-11-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Non-volatile memory semiconductor device and manufacturing method thereof |
CN106601749A (zh) * | 2016-12-15 | 2017-04-26 | 武汉新芯集成电路制造有限公司 | 一种闪存单元结构及分立栅快闪存储器 |
US10431265B2 (en) | 2017-03-23 | 2019-10-01 | Silicon Storage Technology, Inc. | Address fault detection in a flash memory system |
US10381088B2 (en) | 2017-03-30 | 2019-08-13 | Silicon Storage Technology, Inc. | System and method for generating random numbers based on non-volatile memory cell array entropy |
CN108695331B (zh) * | 2017-04-05 | 2020-11-27 | 中芯国际集成电路制造(北京)有限公司 | 存储器及其编程方法、擦除方法和读取方法、电子装置 |
CN107221350B (zh) * | 2017-05-15 | 2020-07-03 | 上海华虹宏力半导体制造有限公司 | 存储器系统、存储器阵列及其读和编程操作方法 |
US10192874B2 (en) * | 2017-06-19 | 2019-01-29 | United Microelectronics Corp. | Nonvolatile memory cell and fabrication method thereof |
US10199112B1 (en) | 2017-08-25 | 2019-02-05 | Silicon Storage Technology, Inc. | Sense amplifier circuit for reading data in a flash memory cell |
US10586598B2 (en) | 2017-09-14 | 2020-03-10 | Silicon Storage Technology, Inc. | System and method for implementing inference engine by optimizing programming operation |
US10534554B2 (en) | 2017-10-13 | 2020-01-14 | Silicon Storage Technology, Inc. | Anti-hacking mechanisms for flash memory device |
US10515694B2 (en) | 2017-11-03 | 2019-12-24 | Silicon Storage Technology, Inc. | System and method for storing multibit data in non-volatile memory |
US10699779B2 (en) | 2017-11-29 | 2020-06-30 | Silicon Storage Technology, Inc. | Neural network classifier using array of two-gate non-volatile memory cells |
US10803943B2 (en) | 2017-11-29 | 2020-10-13 | Silicon Storage Technology, Inc. | Neural network classifier using array of four-gate non-volatile memory cells |
US10748630B2 (en) | 2017-11-29 | 2020-08-18 | Silicon Storage Technology, Inc. | High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks |
US11087207B2 (en) | 2018-03-14 | 2021-08-10 | Silicon Storage Technology, Inc. | Decoders for analog neural memory in deep learning artificial neural network |
US10714634B2 (en) | 2017-12-05 | 2020-07-14 | Silicon Storage Technology, Inc. | Non-volatile split gate memory cells with integrated high K metal control gates and method of making same |
US10600484B2 (en) | 2017-12-20 | 2020-03-24 | Silicon Storage Technology, Inc. | System and method for minimizing floating gate to floating gate coupling effects during programming in flash memory |
US10878897B2 (en) | 2018-01-04 | 2020-12-29 | Silicon Storage Technology, Inc. | System and method for storing and retrieving multibit data in non-volatile memory using current multipliers |
CN110021602B (zh) | 2018-01-05 | 2023-04-07 | 硅存储技术公司 | 在专用沟槽中具有浮栅的非易失性存储器单元 |
CN110010606B (zh) | 2018-01-05 | 2023-04-07 | 硅存储技术公司 | 衬底沟槽中具有浮栅的双位非易失性存储器单元 |
US10312247B1 (en) | 2018-03-22 | 2019-06-04 | Silicon Storage Technology, Inc. | Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication |
US10580491B2 (en) | 2018-03-23 | 2020-03-03 | Silicon Storage Technology, Inc. | System and method for managing peak power demand and noise in non-volatile memory array |
US10468428B1 (en) | 2018-04-19 | 2019-11-05 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same |
US10418451B1 (en) * | 2018-05-09 | 2019-09-17 | Silicon Storage Technology, Inc. | Split-gate flash memory cell with varying insulation gate oxides, and method of forming same |
US10790292B2 (en) | 2018-05-14 | 2020-09-29 | Silicon Storage Technology, Inc. | Method of making embedded memory device with silicon-on-insulator substrate |
CN108831829B (zh) * | 2018-06-19 | 2020-10-27 | 上海华力微电子有限公司 | 一种分裂栅结构下的侧墙栅极隔离刻蚀膜层工艺 |
US10727240B2 (en) | 2018-07-05 | 2020-07-28 | Silicon Store Technology, Inc. | Split gate non-volatile memory cells with three-dimensional FinFET structure |
US10714489B2 (en) * | 2018-08-23 | 2020-07-14 | Silicon Storage Technology, Inc. | Method of programming a split-gate flash memory cell with erase gate |
US10838652B2 (en) | 2018-08-24 | 2020-11-17 | Silicon Storage Technology, Inc. | Programming of memory cell having gate capacitively coupled to floating gate |
US10985272B2 (en) * | 2018-11-05 | 2021-04-20 | Samsung Electronics Co., Ltd. | Integrated circuit devices including vertical field-effect transistors |
TWI694592B (zh) | 2018-11-09 | 2020-05-21 | 物聯記憶體科技股份有限公司 | 非揮發性記憶體及其製造方法 |
CN111192877B (zh) * | 2018-11-14 | 2021-02-19 | 合肥晶合集成电路股份有限公司 | 一种非易失性存储器及其制作方法 |
US10797142B2 (en) | 2018-12-03 | 2020-10-06 | Silicon Storage Technology, Inc. | FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabrication |
US10998325B2 (en) | 2018-12-03 | 2021-05-04 | Silicon Storage Technology, Inc. | Memory cell with floating gate, coupling gate and erase gate, and method of making same |
US10937794B2 (en) | 2018-12-03 | 2021-03-02 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same |
US10902921B2 (en) * | 2018-12-21 | 2021-01-26 | Texas Instruments Incorporated | Flash memory bitcell erase with source bias voltage |
US11409352B2 (en) | 2019-01-18 | 2022-08-09 | Silicon Storage Technology, Inc. | Power management for an analog neural memory in a deep learning artificial neural network |
US11023559B2 (en) | 2019-01-25 | 2021-06-01 | Microsemi Soc Corp. | Apparatus and method for combining analog neural net with FPGA routing in a monolithic integrated circuit |
US10720217B1 (en) | 2019-01-29 | 2020-07-21 | Silicon Storage Technology, Inc. | Memory device and method for varying program state separation based upon frequency of use |
US11107827B2 (en) | 2019-02-28 | 2021-08-31 | International Business Machines Corporation | Integration of split gate metal-oxide-nitride-oxide-semiconductor memory with vertical FET |
US11423979B2 (en) | 2019-04-29 | 2022-08-23 | Silicon Storage Technology, Inc. | Decoding system and physical layout for analog neural memory in deep learning artificial neural network |
CN112185815A (zh) | 2019-07-04 | 2021-01-05 | 硅存储技术公司 | 形成具有间隔物限定的浮栅和离散地形成的多晶硅栅的分裂栅闪存存储器单元的方法 |
US10991433B2 (en) | 2019-09-03 | 2021-04-27 | Silicon Storage Technology, Inc. | Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program |
US11315636B2 (en) * | 2019-10-14 | 2022-04-26 | Silicon Storage Technology, Inc. | Four gate, split-gate flash memory array with byte erase operation |
CN110797344B (zh) * | 2019-11-08 | 2022-10-21 | 武汉新芯集成电路制造有限公司 | 一种半导体器件的制造方法 |
US20210193671A1 (en) | 2019-12-20 | 2021-06-24 | Silicon Storage Technology, Inc. | Method Of Forming A Device With Split Gate Non-volatile Memory Cells, HV Devices Having Planar Channel Regions And FINFET Logic Devices |
CN113299333A (zh) | 2020-02-21 | 2021-08-24 | 硅存储技术股份有限公司 | 由闪存单元构成的eeprom仿真器中的损耗均衡 |
US11114451B1 (en) | 2020-02-27 | 2021-09-07 | Silicon Storage Technology, Inc. | Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices |
US11362100B2 (en) | 2020-03-24 | 2022-06-14 | Silicon Storage Technology, Inc. | FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling |
KR20220163463A (ko) | 2020-06-23 | 2022-12-09 | 실리콘 스토리지 테크놀로지 인크 | 기판 상의 메모리 셀, 고전압 소자 및 논리 소자의 제조 방법 |
CN113838853A (zh) | 2020-06-23 | 2021-12-24 | 硅存储技术股份有限公司 | 在衬底上制造存储器单元、高电压设备和逻辑设备的方法 |
US11309042B2 (en) | 2020-06-29 | 2022-04-19 | Silicon Storage Technology, Inc. | Method of improving read current stability in analog non-volatile memory by program adjustment for memory cells exhibiting random telegraph noise |
CN114078864A (zh) | 2020-08-17 | 2022-02-22 | 硅存储技术股份有限公司 | 通过导电块上的硅化物在基底上制造存储器单元、高电压设备和逻辑设备的方法 |
KR102559812B1 (ko) | 2020-08-17 | 2023-07-25 | 실리콘 스토리지 테크놀로지 인크 | 전도성 블록에 규화물을 갖는 기판 상의 메모리 셀, 고전압 소자 및 논리 소자의 제조 방법 |
CN114256251A (zh) | 2020-09-21 | 2022-03-29 | 硅存储技术股份有限公司 | 形成具有存储器单元、高压器件和逻辑器件的设备的方法 |
WO2022060402A1 (en) | 2020-09-21 | 2022-03-24 | Silicon Storage Technology, Inc. | Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and finfet logic devices |
US11387241B2 (en) | 2020-09-22 | 2022-07-12 | United Microelectronics Corporation | Method for fabricating flash memory |
CN114446972A (zh) | 2020-10-30 | 2022-05-06 | 硅存储技术股份有限公司 | 具有鳍式场效应晶体管结构的分裂栅非易失性存储器单元、hv和逻辑器件及其制造方法 |
WO2022146465A1 (en) | 2020-12-29 | 2022-07-07 | Silicon Storage Technology, Inc. | Improved architectures for storing and retrieving system data in a non-volatile memory system |
US11538532B2 (en) | 2020-12-29 | 2022-12-27 | Silicon Storage Technology, Inc. | Architectures for storing and retrieving system data in a non-volatile memory system |
US11545583B2 (en) | 2021-02-05 | 2023-01-03 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a non-volatile memory cell |
CN115000072A (zh) | 2021-03-01 | 2022-09-02 | 硅存储技术股份有限公司 | 在衬底上形成具有存储器单元、高电压设备和逻辑设备的半导体设备的方法 |
EP4302332A1 (en) | 2021-03-01 | 2024-01-10 | Silicon Storage Technology Inc. | Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate |
EP4348651A1 (en) | 2021-06-02 | 2024-04-10 | Silicon Storage Technology Inc. | Method of improving read current stability in analog non-volatile memory by post-program tuning for memory cells exhibiting random telegraph noise |
WO2022260692A1 (en) | 2021-06-08 | 2022-12-15 | Silicon Storage Technology, Inc. | Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells |
US11769558B2 (en) | 2021-06-08 | 2023-09-26 | Silicon Storage Technology, Inc. | Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells |
US11462622B1 (en) | 2021-06-23 | 2022-10-04 | Globalfoundries Singapore Pte. Ltd. | Memory cells and methods of forming a memory cell |
TW202308125A (zh) * | 2021-08-02 | 2023-02-16 | 聯華電子股份有限公司 | 半導體記憶元件及其製作方法 |
US11721731B2 (en) | 2021-08-03 | 2023-08-08 | Globalfoundries Singapore Pte. Ltd. | Nonvolatile memory having multiple narrow tips at floating gate |
WO2023091172A1 (en) | 2021-11-22 | 2023-05-25 | Silicon Storage Technology, Inc. | Address fault detection in a memory system |
WO2023154078A1 (en) | 2022-02-14 | 2023-08-17 | Silicon Storage Technology, Inc. | Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate using a dummy area |
WO2023172279A1 (en) | 2022-03-08 | 2023-09-14 | Silicon Storage Technology, Inc. | Method of forming a device with planar split gate non-volatile memory cells, planar hv devices, and finfet logic devices on a substrate |
US11968829B2 (en) | 2022-03-10 | 2024-04-23 | Silicon Storage Technology, Inc. | Method of forming memory cells, high voltage devices and logic devices on a semiconductor substrate |
WO2023172280A1 (en) | 2022-03-10 | 2023-09-14 | Silicon Storage Technology, Inc. | Method of forming memory cells, high voltage devices and logic devices on a semiconductor substrate |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0640588B2 (ja) * | 1987-03-13 | 1994-05-25 | 株式会社東芝 | 半導体記憶装置 |
JPH01143361A (ja) * | 1987-11-30 | 1989-06-05 | Sony Corp | 不揮発性メモリ |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5268319A (en) * | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
US5242848A (en) * | 1990-01-22 | 1993-09-07 | Silicon Storage Technology, Inc. | Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device |
JP3854629B2 (ja) * | 1991-04-09 | 2006-12-06 | シリコン・ストーリッジ・テクノロジー・インク | メモリーアレイ装置、メモリーセル装置及びそのプログラミング方法 |
US5579259A (en) * | 1995-05-31 | 1996-11-26 | Sandisk Corporation | Low voltage erase of a flash EEPROM system having a common erase electrode for two individually erasable sectors |
JP3241316B2 (ja) * | 1998-01-07 | 2001-12-25 | 日本電気株式会社 | フラッシュメモリの製造方法 |
JP4222675B2 (ja) * | 1999-03-29 | 2009-02-12 | 三洋電機株式会社 | 不揮発性半導体記憶装置 |
US6747310B2 (en) * | 2002-10-07 | 2004-06-08 | Actrans System Inc. | Flash memory cells with separated self-aligned select and erase gates, and process of fabrication |
US20040256657A1 (en) * | 2003-06-20 | 2004-12-23 | Chih-Wei Hung | [flash memory cell structure and method of manufacturing and operating the memory cell] |
US6951782B2 (en) * | 2003-07-30 | 2005-10-04 | Promos Technologies, Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions |
US7046552B2 (en) * | 2004-03-17 | 2006-05-16 | Actrans System Incorporation, Usa | Flash memory with enhanced program and erase coupling and process of fabricating the same |
US6992929B2 (en) * | 2004-03-17 | 2006-01-31 | Actrans System Incorporation, Usa | Self-aligned split-gate NAND flash memory and fabrication process |
FR2871940B1 (fr) * | 2004-06-18 | 2007-06-15 | St Microelectronics Rousset | Transistor mos a grille flottante, a double grille de controle |
JP2006108668A (ja) * | 2004-09-30 | 2006-04-20 | Samsung Electronics Co Ltd | 不揮発性メモリ素子とその製造方法 |
TWI284415B (en) * | 2005-10-26 | 2007-07-21 | Promos Technologies Inc | Split gate flash memory cell and fabrication method thereof |
US7700473B2 (en) * | 2007-04-09 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gated semiconductor device and method of fabricating same |
-
2007
- 2007-08-06 US US11/834,574 patent/US20090039410A1/en not_active Abandoned
-
2008
- 2008-07-18 TW TW097127416A patent/TWI393263B/zh active
- 2008-08-01 KR KR1020080075628A patent/KR20090014967A/ko not_active Application Discontinuation
- 2008-08-05 CN CN2011102379841A patent/CN102403274A/zh active Pending
- 2008-08-05 CN CN2008101352676A patent/CN101364614B/zh active Active
- 2008-08-05 CN CN2011104494755A patent/CN102522409A/zh active Pending
- 2008-08-06 JP JP2008225276A patent/JP5361292B2/ja active Active
-
2009
- 2009-11-13 US US12/618,632 patent/US7868375B2/en active Active
-
2010
- 2010-12-06 US US12/961,193 patent/US7927994B1/en active Active
-
2011
- 2011-02-08 US US13/023,443 patent/US20110127599A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN102522409A (zh) | 2012-06-27 |
CN101364614A (zh) | 2009-02-11 |
US20110127599A1 (en) | 2011-06-02 |
CN101364614B (zh) | 2012-02-08 |
JP2009044164A (ja) | 2009-02-26 |
TWI393263B (zh) | 2013-04-11 |
US7868375B2 (en) | 2011-01-11 |
US7927994B1 (en) | 2011-04-19 |
CN102403274A (zh) | 2012-04-04 |
KR20090014967A (ko) | 2009-02-11 |
US20110076816A1 (en) | 2011-03-31 |
US20100054043A1 (en) | 2010-03-04 |
US20090039410A1 (en) | 2009-02-12 |
TW200917495A (en) | 2009-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5361292B2 (ja) | 浮遊ゲート、制御ゲート、選択ゲート、及び浮遊ゲートの上にオーバーハングをもつ消去ゲートを有する、改善されたスプリット・ゲート型不揮発性フラッシュメモリ・セル、アレイ、及び製造方法 | |
JP6094934B2 (ja) | デプレッションモード浮遊ゲートチャネルを備えた分割ゲートメモリセル、及びその製造方法 | |
US7407857B2 (en) | Method of making a scalable flash EEPROM memory cell with notched floating gate and graded source region | |
US6621115B2 (en) | Scalable flash EEPROM memory cell with floating gate spacer wrapped by control gate | |
US7256448B2 (en) | Split gate type nonvolatile semiconductor memory device, and method of fabricating the same | |
JP5781733B2 (ja) | 不揮発性メモリセル及びその製造方法 | |
US6720611B2 (en) | Fabrication method for flash memory | |
US6875660B2 (en) | Method of manufacturing high coupling ratio flash memory having sidewall spacer floating gate electrode | |
US7355241B2 (en) | Non-volatile memory | |
JP2004111963A (ja) | プログラム及び消去特性が改善されたsonoseeprom及びその製造方法 | |
JPH07226449A (ja) | 電気的に情報の書込および消去が可能な半導体記憶装置およびその製造方法ならびにその記憶認識方法 | |
US6844232B2 (en) | Flash memory device and fabricating method therefor | |
US7915118B2 (en) | Nonvolatile memory devices and methods of fabricating the same | |
US6849499B2 (en) | Process for flash memory cell | |
TW202215440A (zh) | 具有設置在字線閘上方之抹除閘的分離閘2位元非揮發性記憶體單元及其製造方法 | |
JP2023544019A (ja) | ワード線ゲートの上方に配設された消去ゲートを有するスプリットゲート不揮発性メモリセル、及びその作製方法 | |
US20060039200A1 (en) | Non-volatile memory cell, fabrication method and operating method thereof | |
KR100486075B1 (ko) | 트렌치 구조의 플래시 메모리 셀과 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120223 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120305 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120605 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120608 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121022 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130805 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130903 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5361292 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |