JP5328065B2 - 拡散バリアー層及びその製造方法 - Google Patents

拡散バリアー層及びその製造方法 Download PDF

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Publication number
JP5328065B2
JP5328065B2 JP2000569428A JP2000569428A JP5328065B2 JP 5328065 B2 JP5328065 B2 JP 5328065B2 JP 2000569428 A JP2000569428 A JP 2000569428A JP 2000569428 A JP2000569428 A JP 2000569428A JP 5328065 B2 JP5328065 B2 JP 5328065B2
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Japan
Prior art keywords
platinum
ruthenium
layer
electrode
alloy
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Expired - Fee Related
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JP2000569428A
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English (en)
Japanese (ja)
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JP2002524872A (ja
JP2002524872A5 (enExample
Inventor
ピー． マーシュ，ユージーン
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Mosaid Technologies Inc
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Conversant Intellectual Property Management Inc
Mosaid Technologies Inc
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Publication of JP2002524872A5 publication Critical patent/JP2002524872A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000569428A 1998-09-03 1999-08-31 拡散バリアー層及びその製造方法 Expired - Fee Related JP5328065B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/146,866 US6323081B1 (en) 1998-09-03 1998-09-03 Diffusion barrier layers and methods of forming same
US09/146,866 1998-09-03
PCT/US1999/020053 WO2000014778A1 (en) 1998-09-03 1999-08-31 Diffusion barrier layers and methods of forming same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012003619A Division JP5490829B2 (ja) 1998-09-03 2012-01-11 拡散バリアー層及びその製造方法

Publications (3)

Publication Number Publication Date
JP2002524872A JP2002524872A (ja) 2002-08-06
JP2002524872A5 JP2002524872A5 (enExample) 2006-10-05
JP5328065B2 true JP5328065B2 (ja) 2013-10-30

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000569428A Expired - Fee Related JP5328065B2 (ja) 1998-09-03 1999-08-31 拡散バリアー層及びその製造方法
JP2012003619A Expired - Fee Related JP5490829B2 (ja) 1998-09-03 2012-01-11 拡散バリアー層及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012003619A Expired - Fee Related JP5490829B2 (ja) 1998-09-03 2012-01-11 拡散バリアー層及びその製造方法

Country Status (5)

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US (2) US6323081B1 (enExample)
JP (2) JP5328065B2 (enExample)
KR (1) KR100441190B1 (enExample)
AU (1) AU5799699A (enExample)
WO (1) WO2000014778A1 (enExample)

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US20020008270A1 (en) 2002-01-24
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